WO2010061667A1 - 光電変換装置の製造方法 - Google Patents
光電変換装置の製造方法 Download PDFInfo
- Publication number
- WO2010061667A1 WO2010061667A1 PCT/JP2009/064425 JP2009064425W WO2010061667A1 WO 2010061667 A1 WO2010061667 A1 WO 2010061667A1 JP 2009064425 W JP2009064425 W JP 2009064425W WO 2010061667 A1 WO2010061667 A1 WO 2010061667A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- photoelectric conversion
- film
- forming
- silicon
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 55
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000001257 hydrogen Substances 0.000 claims abstract description 34
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 34
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 33
- 238000010790 dilution Methods 0.000 claims abstract description 33
- 239000012895 dilution Substances 0.000 claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 23
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 23
- 239000010703 silicon Substances 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 17
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims abstract description 8
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract 4
- 239000007789 gas Substances 0.000 claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 8
- 229910052799 carbon Inorganic materials 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 145
- 239000010408 film Substances 0.000 description 60
- 150000002431 hydrogen Chemical class 0.000 description 29
- 238000000151 deposition Methods 0.000 description 17
- 230000008021 deposition Effects 0.000 description 17
- 229910021417 amorphous silicon Inorganic materials 0.000 description 10
- 238000010329 laser etching Methods 0.000 description 9
- 238000010248 power generation Methods 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 239000011889 copper foil Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000005038 ethylene vinyl acetate Substances 0.000 description 5
- 238000007689 inspection Methods 0.000 description 5
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 229910009372 YVO4 Inorganic materials 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
- H01L31/077—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells the devices comprising monocrystalline or polycrystalline materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the present invention relates to a method for manufacturing a photoelectric conversion device, and more particularly to a method for manufacturing a thin film solar cell using silicon as a power generation layer.
- Photoelectric conversion devices used in solar cells that convert solar energy into electrical energy include p-type silicon semiconductors (p layers), i-type silicon semiconductors (i layers), and n-type silicon semiconductors (n layers).
- p layers p-type silicon semiconductors
- i layers i-type silicon semiconductors
- n layers n-type silicon semiconductors
- a thin-film silicon-based photoelectric conversion device including a photoelectric conversion layer formed by forming a thin film by using a plasma CVD method or the like is known.
- the n layer is often made of crystalline silicon as disclosed in Patent Document 1, but may be made of amorphous silicon.
- the thin-film silicon solar cell include that the area can be easily increased and that the film thickness is as thin as about 1/100 that of a crystalline solar cell, and that the material can be reduced. For this reason, the thin film silicon solar cell can be manufactured at a lower cost than the crystalline solar cell.
- a disadvantage of the thin-film silicon solar cell is that the conversion efficiency is lower than that of the crystal system. In this technical field, improvement of conversion efficiency is an important issue.
- the amorphous silicon n layer fills the valley of the surface of the i layer, the surface after the n layer is formed becomes smooth, and the coverage is improved. It was thought. However, when the surface of the crystalline silicon i layer as the underlayer is rough, the crystalline silicon n layer is used even under the hydrogen dilution rate condition (for example, 20 times) in which amorphous silicon is formed on the glass. As in the case of forming a film, there was a problem that the form factor and the open circuit voltage were lowered.
- An object of the present invention is to provide a method for manufacturing a photoelectric conversion device that achieves both high productivity and high conversion efficiency by forming an n layer with good coverage at high speed.
- the present invention provides a method for manufacturing a photoelectric conversion device including a step of forming a silicon-based photoelectric conversion layer on a substrate by a plasma CVD method, wherein the photoelectric conversion layer is formed. Includes a step of forming an i layer made of crystalline silicon, and a step of forming an n layer on the i layer under a condition of a hydrogen dilution rate of 0 to 10 times.
- a manufacturing method is provided.
- the inventors of the present invention have a high SiH 4 partial pressure at the time of n-layer deposition, that is, a hydrogen dilution rate of 0, without reducing the deposition rate. It has been found that a photoelectric conversion device having a high conversion efficiency can be produced by improving the shape factor and open circuit voltage of the photoelectric conversion device by setting the conversion factor to 10 to 10 times. This is because, in the region where the hydrogen dilution rate is low, the epitaxial growth of n-type silicon is suppressed even if the base is crystalline, so that the amorphous silicon n layer grows over the entire substrate and the coverage is improved. Can be guessed.
- the n layer is preferably formed at a film forming rate of 0.2 nm / sec or more. According to the present invention, a photoelectric conversion device having high conversion efficiency can be manufactured without reducing productivity, which is advantageous.
- the n layer may be formed using a gas containing at least one element of carbon and nitrogen as a source gas.
- a gas containing at least one element of carbon and nitrogen as a source gas.
- the step of forming the n layer includes a step of forming the first n layer and a step of forming the second n layer, and the first n layer has a hydrogen dilution ratio of 0 to 10 times.
- the second n layer may be formed under a hydrogen dilution rate condition different from that of the first n layer.
- the n layer is composed of the first n layer and the second n layer formed under different conditions of the hydrogen dilution rate, and the hydrogen dilution rate is set to 0 to 10 times in the formation of the first n layer. In this way, it is possible to improve the form factor and the open-circuit voltage and manufacture a photoelectric conversion device with high conversion efficiency.
- an n layer is formed on a crystalline silicon i layer under a condition of hydrogen dilution rate of 0 times or more and 10 times, thereby improving a form factor and an open circuit voltage and having a high conversion efficiency.
- FIG. 1 is a schematic diagram showing the configuration of the photoelectric conversion device of the present invention.
- the photoelectric conversion device 100 is a single-type silicon solar cell, a solar cell photoelectric conversion layer 3 in which a substrate 1, a transparent electrode layer 2, a p layer 41, an i layer 42, and an n layer 43 are stacked in this order from the substrate side, and A back electrode layer 4 is provided.
- the silicon-based is a generic name including silicon (Si), silicon carbide (SiC), and silicon germanium (SiGe).
- the crystalline silicon system means a silicon system other than the amorphous silicon system, and includes microcrystalline silicon and polycrystalline silicon.
- Embodiments of a method for manufacturing a photoelectric conversion device according to the present invention will be described by taking a process for manufacturing a solar cell panel as an example.
- 2 to 5 are schematic views showing a method for manufacturing the solar cell panel of the present embodiment.
- FIG. 2 (a) A large-area soda float glass substrate (for example, 1.4 m ⁇ 1.1 m ⁇ plate thickness: 3.5 mm to 4.5 mm) having an area of 1 m 2 or more is used as the substrate 1.
- the end face of the substrate is preferably subjected to corner chamfering or R chamfering to prevent damage due to thermal stress or impact.
- FIG. 2 (b) As the transparent conductive layer 2, a transparent conductive film having a thickness of about 500 nm to 800 nm and having tin oxide (SnO 2 ) as a main component is formed at about 500 ° C. with a thermal CVD apparatus. At this time, a texture with appropriate irregularities is formed on the surface of the transparent electrode film.
- an alkali barrier film (not shown) may be formed between the substrate 1 and the transparent electrode film.
- a silicon oxide film (SiO 2 ) is formed at a temperature of about 500 ° C. with a thermal CVD apparatus at 50 nm to 150 nm.
- FIG. 2 (c) Thereafter, the substrate 1 is set on an XY table, and the first harmonic (1064 nm) of the YAG laser is irradiated from the film surface side of the transparent electrode film as indicated by an arrow in the figure.
- the laser power is adjusted to be appropriate for the processing speed, and the transparent electrode film is moved relative to the direction perpendicular to the series connection direction of the power generation cells so that the substrate 1 and the laser light are moved relative to each other to form the groove 10.
- FIG. 2 (d) Using a plasma CVD apparatus, source gas: hydrogen and silane (SiH 4 ), reduced pressure atmosphere: 3000 Pa or less, substrate temperature: about 200 ° C., plasma generation frequency: 40 MHz to 100 MHz, p layer 41, i layer 42, and The n layer 43 is sequentially formed.
- the crystalline silicon p layer 41 is mainly made of B-doped microcrystalline silicon and has a thickness of 10 nm to 50 nm.
- the crystalline silicon i layer 42 is mainly made of microcrystalline silicon and has a film thickness of 1.2 ⁇ m or more and 3.0 ⁇ m or less.
- the n layer 43 is mainly made of P-doped silicon and has a thickness of 20 nm to 50 nm.
- the hydrogen dilution rate H 2 / SiH 4 is set to 0 times or more and 10 times or less.
- the deposition rate of the n layer is 0.2 nm / sec or more, preferably 0.25 nm / sec or more.
- a gas containing at least one element of carbon and nitrogen may be further introduced into the plasma CVD apparatus as a source gas.
- the gas include methane gas and nitrogen gas.
- the amount of methane gas added is 0.2% or more and 1.2% or less, preferably 0.5% or more and 0.8% or less in terms of a flow rate ratio with respect to silane.
- the amount of nitrogen gas added is 0.2% or more and 3% or less, preferably 0.5% or more and 2% or less in flow rate ratio with respect to silane.
- the n layer 43 may be a single layer formed under a constant hydrogen dilution rate condition within the above range, or two layers having different hydrogen dilution rates may be stacked.
- the first n layer formed on the crystalline silicon i layer 42 is formed under conditions of a hydrogen dilution rate of 0 to 10 times.
- the film may be formed using a gas containing at least one element of carbon and nitrogen described above.
- the second n layer is formed at a hydrogen dilution rate different from that of the first n layer. At this time, if the second n layer is formed under a hydrogen dilution rate condition (for example, 20 times) at which the film formation rate is high and amorphous silicon is formed, productivity is improved and coverage is also improved. This is advantageous.
- the distance d between the plasma discharge electrode and the surface of the substrate 1 is preferably 3 mm or more and 10 mm or less. If it is smaller than 3 mm, it is difficult to keep the distance d constant from the accuracy of each component device in the film forming chamber corresponding to the large substrate, and there is a possibility that the discharge becomes unstable because it is too close. When it is larger than 10 mm, it is difficult to obtain a sufficient film forming speed (1 nm / s or more), and the uniformity of the plasma is lowered and the film quality is lowered by ion bombardment.
- FIG. 2 (e) The substrate 1 is placed on an XY table, and the second harmonic (532 nm) of the laser diode-pumped YAG laser is irradiated from the film surface side of the photoelectric conversion layer 3 as shown by the arrow in the figure.
- Pulse oscillation 10 kHz to 20 kHz, laser power is adjusted so that the processing speed is appropriate, and laser etching is performed so that grooves 11 are formed on the lateral side of the laser etching line of the transparent electrode layer 2 from about 100 ⁇ m to 150 ⁇ m. To do. Further, this laser may be irradiated from the substrate 1 side.
- the photoelectric conversion layer is formed by utilizing a high vapor pressure generated by the energy absorbed in the amorphous silicon-based first cell layer of the photoelectric conversion layer 3. Since 3 can be etched, a more stable laser etching process can be performed. The position of the laser etching line is selected in consideration of positioning tolerances so as not to intersect with the etching line in the previous process.
- FIG. 3 An Ag film / Ti film is formed as the back electrode layer 4 by a sputtering apparatus at a reduced pressure atmosphere and at a film forming temperature of 150 ° C. to 200 ° C.
- an Ag film 150 nm or more and 500 nm or less
- a Ti film having a high anticorrosion effect 10 nm or more and 20 nm or less are stacked in this order to protect them.
- the back electrode layer 4 may have a laminated structure of an Ag film having a thickness of 25 nm to 100 nm and an Al film having a thickness of 15 nm to 500 nm.
- a GZO Ga film thickness: 50 nm to 100 nm
- a doped ZnO film may be formed.
- FIG. 3 (b) The substrate 1 is placed on an XY table, and the second harmonic (532 nm) of the laser diode-pumped YAG laser is irradiated from the substrate 1 side as indicated by the arrow in the figure.
- the laser light is absorbed by the photoelectric conversion layer 3, and the back electrode layer 4 is exploded and removed using the high gas vapor pressure generated at this time.
- Pulse oscillation laser power is adjusted so as to be suitable for the processing speed from 1 kHz to 10 kHz, and laser etching is performed so that grooves 12 are formed on the lateral side of the laser etching line of the transparent electrode layer 2 from 250 ⁇ m to 400 ⁇ m. .
- FIG. 3 (c) and FIG. 4 (a) The power generation region is divided to eliminate the influence that the serial connection portion due to laser etching is likely to be short-circuited at the film edge around the substrate edge.
- the substrate 1 is set on an XY table, and the second harmonic (532 nm) of the laser diode pumped YAG laser is irradiated from the substrate 1 side.
- the laser light is absorbed by the transparent electrode layer 2 and the photoelectric conversion layer 3, and the back electrode layer 4 explodes using the high gas vapor pressure generated at this time, and the back electrode layer 4 / photoelectric conversion layer 3 / transparent electrode layer 2 is removed.
- Pulse oscillation 1 kHz or more and 10 kHz or less
- the laser power is adjusted so as to be suitable for the processing speed, and the position of 5 mm to 20 mm from the end of the substrate 1 is placed in the X-direction insulating groove as shown in FIG.
- Laser etching is performed to form 15.
- FIG.3 (c) since it becomes X direction sectional drawing cut
- the insulating groove formed to represent the Y-direction cross section at the position will be described as the X-direction insulating groove 15.
- the Y-direction insulating groove does not need to be provided because the film surface polishing removal processing of the peripheral film removal region of the substrate 1 is performed in a later process.
- the insulating groove 15 exhibits an effective effect in suppressing external moisture intrusion into the solar cell module 6 from the end portion of the solar cell panel by terminating the etching at a position of 5 mm to 15 mm from the end of the substrate 1. Therefore, it is preferable.
- the laser beam in the above steps is a YAG laser
- a YVO4 laser or a fiber laser there are some that can use a YVO4 laser or a fiber laser in the same manner.
- FIG. 4 (a: view from the solar cell film side, b: view from the substrate side of the light receiving surface) Since the laminated film around the substrate 1 (peripheral film removal region 14) has a step and is easy to peel off in order to ensure a sound adhesion / seal surface with the back sheet 24 via EVA or the like in a later process, The film is removed to form a peripheral film removal region 14. When removing the film over the entire periphery of the substrate 1 at 5 to 20 mm from the end of the substrate 1, the X direction is closer to the substrate end than the insulating groove 15 provided in the step of FIG.
- the back electrode layer 4 / photoelectric conversion layer 3 / transparent electrode layer 2 are removed by using grinding stone polishing, blast polishing, or the like on the substrate end side with respect to the groove 10 near the side portion. Polishing debris and abrasive grains were removed by cleaning the substrate 1.
- FIGS. 5 (a) and 5 (b) An attachment portion of the terminal box 23 is provided with an opening through window in the back sheet 24 to take out the current collector plate. Insulating materials are installed in a plurality of layers in the opening through window portion to suppress intrusion of moisture and the like from the outside. Processing so that power can be taken out from the terminal box 23 on the back side of the solar battery panel by collecting copper foil from one end of the photovoltaic power generation cells arranged in series and the other end of the solar power generation cell. To do. In order to prevent a short circuit with each part, the copper foil arranges an insulating sheet wider than the copper foil width.
- an adhesive filler sheet made of EVA (ethylene vinyl acetate copolymer) or the like is disposed so as to cover the entire solar cell module 6 and not protrude from the substrate 1. .
- a back sheet 24 having a high waterproof effect is installed on the EVA.
- the back sheet 24 has a three-layer structure of PET sheet / Al foil / PET sheet so that the waterproof and moisture-proof effect is high.
- the one with the back sheet 24 arranged in a predetermined position is deaerated inside in a reduced pressure atmosphere by a laminator and pressed at about 150 to 160 ° C., and EVA is crosslinked and brought into close contact.
- FIG. 5 (a) The terminal box 23 is attached to the back side of the solar cell module 6 with an adhesive.
- FIG. 5 (b) The copper foil and the output cable of the terminal box 23 are connected by solder or the like, and the inside of the terminal box 23 is filled with a sealing agent (potting agent) and sealed. Thus, the solar cell panel 50 is completed.
- FIG. 5 (c) A power generation inspection and a predetermined performance test are performed on the solar cell panel 50 formed in the steps up to FIG. The power generation inspection is performed using a solar simulator of AM1.5 and solar radiation standard sunlight (1000 W / m 2 ).
- FIG. 5 (d) Before and after the power generation inspection (FIG. 5C), a predetermined performance inspection is performed including an appearance inspection.
- Example 1 A single solar cell having the configuration shown in FIG. 1 was produced. On the glass substrate, a 80 nm-thick tin oxide film was formed as a transparent electrode layer.
- the crystalline silicon p layer uses H 2 , SiH 4 and B 2 H 6 as source gases, hydrogen dilution rate: 100 times, pressure: 500 Pa, substrate temperature: 180 ° C., plasma generation frequency: 60 MHz, film thickness: 20 nm
- the film was formed under the following conditions.
- the crystalline silicon i layer uses H 2 and SiH 4 as source gases, hydrogen dilution rate: 45 times, pressure: 2100 Pa, substrate temperature: 180 ° C., plasma generation frequency: 100 MHz, film thickness: 0.5 ⁇ m, or 1.
- a film was formed under the condition of 9 ⁇ m.
- As the back electrode layer a ZnO film with a thickness of 70 nm and an Ag film with a thickness of 250 nm were formed.
- the n layer uses H 2 , SiH 4 and PH 3 as source gases, hydrogen dilution ratio: 5 to 50 times, pressure: 250 to 700 Pa, substrate temperature: 180 ° C., plasma generation frequency: 60 MHz, film thickness: 30 nm
- the film was formed under the following conditions. In n-layer deposition, the input power was adjusted so that the deposition rate was 0.2 nm / sec.
- FIG. 6 is a graph showing the correlation between the hydrogen dilution rate and the fill factor during n-layer deposition in a solar cell having a crystalline silicon i-layer thickness of 0.5 ⁇ m.
- FIG. 7 is a graph showing the correlation between the hydrogen dilution rate and the solar cell curvilinear factor during n-layer deposition in a solar cell having a crystalline silicon i-layer thickness of 1.9 ⁇ m. 6 and 7, the horizontal axis represents the H 2 / SiH 4 flow rate ratio during n-layer deposition, and the vertical axis represents the solar cell curve factor (normalized by the value of the curve factor when the hydrogen dilution rate is 10 times). It is. As shown in FIGS.
- a high fill factor was obtained at a hydrogen dilution rate of 10 times or less during n-layer deposition. Moreover, when the hydrogen dilution rate exceeded 10 times, the fill factor decreased with an increase in the hydrogen dilution rate.
- the improvement of the fill factor can be predicted because n-type silicon does not grow epitaxially and n-type silicon is also formed in the valleys in the irregular shape on the surface of the crystalline silicon i layer. Moreover, the tendency that the fill factor increases as the hydrogen dilution rate decreases is more conspicuous as the crystalline silicon i layer is thinner. This is considered to be because the surface of the i layer becomes flatter as the crystalline silicon i layer becomes thicker.
- the results of Example 1 indicate that the photoelectric conversion efficiency can be improved by setting the hydrogen dilution rate during n-layer deposition to 0 to 10 times.
- Example 2 A transparent electrode layer, a crystalline silicon p layer, a crystalline silicon i layer, and a back electrode layer were formed under the same conditions as in Example 1 except for the n layer to produce a single type solar cell.
- n layer uses H 2 , SiH 4 , PH 3, and CH 4 as source gases, hydrogen dilution rate: 10 times, CH 4 flow rate ratio to SiH 4 : 0-8%, pressure: 250 Pa, substrate temperature: 180 Film formation was performed under the conditions of ° C., plasma generation frequency: 60 MHz, and film thickness: 30 nm. In n-layer deposition, the input power was adjusted so that the deposition rate was 0.2 nm / sec.
- Example 3 Single type as in Example 2 except that H 2 , SiH 4 , PH 3 and N 2 were used as the source gas for n-layer deposition, and the flow rate ratio of N 2 to SiH 4 was 0 to 5%. A solar battery cell was produced.
- FIG. 8 is a graph showing the relationship between the CH 4 / SiH 4 flow rate ratio and the fill factor during n-layer deposition for the solar battery cell of Example 2.
- the horizontal axis is the CH 4 / SiH 4 flow rate ratio
- the vertical axis is the curve factor of the solar battery cell normalized by the value of the curve factor when the CH 4 / SiH 4 flow rate ratio is 0.2%.
- FIG. 9 is a graph showing the relationship between the N 2 / SiH 4 flow rate ratio and the fill factor during n-layer deposition for the solar battery cell of Example 3.
- the horizontal axis is the N 2 / SiH 4 flow rate ratio
- the vertical axis is the solar cell curve factor normalized by the value of the curve factor when the N 2 / SiH 4 flow rate ratio is 0.5%.
- a single type solar cell has been described as the solar cell, but the present invention is not limited to this example.
- the present invention can be similarly applied to other types of thin film solar cells such as a tandem solar cell, a silicon germanium solar cell, and a triple solar cell.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
通常、i層に結晶質シリコンを適用した場合、n層は、特許文献1のように結晶質シリコンとされることが多いが、非晶質シリコンとされる場合もある。
本発明によれば、生産性を落とさずに、高変換効率の光電変換装置を製造することができるので有利である。
n型シリコンに炭素や窒素を不純物として添加させることにより、n型シリコンの結晶化が阻害される。従って、炭素及び窒素のうち少なくとも一方を含むガスを原料ガスとしてn層を形成すれば、n型の非晶質シリコンが製膜されやすくなる。この結果、形状因子及び開放電圧を改善する効果をより高めることが可能である。
基板1として1m2以上の面積を有する大面積のソーダフロートガラス基板(例えば1.4m×1.1m×板厚:3.5mm~4.5mm)を使用する。基板端面は熱応力や衝撃などによる破損防止にコーナー面取りやR面取り加工されていることが望ましい。
透明導電層2として、酸化錫(SnO2)を主成分とする膜厚約500nm以上800nm以下の透明導電膜を、熱CVD装置にて約500℃で製膜する。この際、透明電極膜の表面には、適当な凹凸のあるテクスチャーが形成される。透明導電層2として、透明電極膜に加えて、基板1と透明電極膜との間にアルカリバリア膜(図示されず)を形成しても良い。アルカリバリア膜は、酸化シリコン膜(SiO2)を50nm~150nm、熱CVD装置にて約500℃で製膜処理する。
その後、基板1をX-Yテーブルに設置して、YAGレーザーの第1高調波(1064nm)を、図の矢印に示すように、透明電極膜の膜面側から照射する。加工速度に適切となるようにレーザーパワーを調整して、透明電極膜を発電セルの直列接続方向に対して垂直な方向へ、基板1とレーザー光を相対移動して、溝10を形成するように幅約6mmから15mmの所定幅の短冊状にレーザーエッチングする。
プラズマCVD装置により、原料ガス:水素及びシラン(SiH4)、減圧雰囲気:3000Pa以下、基板温度:約200℃、プラズマ発生周波数:40MHz以上100MHz以下にて、p層41、i層42、及び、n層43を順次製膜する。結晶質シリコンp層41はBドープした微結晶シリコンを主とし、膜厚10nm以上50nm以下である。結晶質シリコンi層42は微結晶シリコンを主とし、膜厚は1.2μm以上3.0μm以下である。
n層43が2層構成とされる場合、結晶質シリコンi層42上に形成される第1n層は、水素希釈率0倍以上10倍以下の条件で製膜される。第1n層の製膜においても、上述した炭素及び窒素のうち少なくとも一方の元素を含むガスを用いて製膜しても良い。第2n層は、第1n層と異なる水素希釈率で製膜される。この時、製膜速度が高く、かつ、非晶質シリコンが製膜される水素希釈率条件(例えば20倍)で第2n層を製膜すれば、生産性が向上する上、カバレージも改善されると考えられるため、有利である。
基板1をX-Yテーブルに設置して、レーザーダイオード励起YAGレーザーの第2高調波(532nm)を、図の矢印に示すように、光電変換層3の膜面側から照射する。パルス発振:10kHzから20kHzとして、加工速度が適切となるようにレーザーパワーを調整して、透明電極層2のレーザーエッチングラインの約100μmから150μmの横側を、溝11を形成するようにレーザーエッチングする。またこのレーザーは基板1側から照射しても良く、この場合は光電変換層3の非晶質シリコン系の第1セル層で吸収されたエネルギーで発生する高い蒸気圧を利用して光電変換層3をエッチングできるので、更に安定したレーザーエッチング加工を行うことが可能となる。レーザーエッチングラインの位置は前工程でのエッチングラインと交差しないように位置決め公差を考慮して選定する。
裏面電極層4としてAg膜/Ti膜を、スパッタリング装置により、減圧雰囲気、製膜温度:150℃から200℃にて製膜する。本実施形態では、Ag膜:150nm以上500nm以下、これを保護するものとして防食効果の高いTi膜:10nm以上20nm以下を、この順に積層する。あるいは、裏面電極層4を、25nmから100nmの膜厚を有するAg膜と、15nmから500nmの膜厚を有するAl膜との積層構造としても良い。n層43と裏面電極層4との接触抵抗低減と光反射向上を目的に、光電変換層3と裏面電極層4との間に、スパッタリング装置により、膜厚:50nm以上100nm以下のGZO(GaドープZnO)膜を製膜して設けても良い。
基板1をX-Yテーブルに設置して、レーザーダイオード励起YAGレーザーの第2高調波(532nm)を、図の矢印に示すように、基板1側から照射する。レーザー光が光電変換層3で吸収され、このとき発生する高いガス蒸気圧を利用して裏面電極層4が爆裂して除去される。パルス発振:1kHz以上10kHz以下として加工速度に適切となるようにレーザーパワーを調整して、透明電極層2のレーザーエッチングラインの250μmから400μmの横側を、溝12を形成するようにレーザーエッチングする。
発電領域を区分して、基板端周辺の膜端部においてレーザーエッチングによる直列接続部分が短絡し易い影響を除去する。基板1をX-Yテーブルに設置して、レーザーダイオード励起YAGレーザーの第2高調波(532nm)を、基板1側から照射する。レーザー光が透明電極層2と光電変換層3で吸収され、このとき発生する高いガス蒸気圧を利用して裏面電極層4が爆裂して、裏面電極層4/光電変換層3/透明電極層2が除去される。パルス発振:1kHz以上10kHz以下として加工速度に適切となるようにレーザーパワーを調整して、基板1の端部から5mmから20mmの位置を、図3(c)に示すように、X方向絶縁溝15を形成するようにレーザーエッチングする。なお、図3(c)では、光電変換層3が直列に接続された方向に切断したX方向断面図となっているため、本来であれば絶縁溝15位置には裏面電極層4/光電変換層3/透明電極層2の膜研磨除去をした周囲膜除去領域14がある状態(図4(a)参照)が表れるべきであるが、基板1の端部への加工の説明の便宜上、この位置にY方向断面を表して形成された絶縁溝をX方向絶縁溝15として説明する。このとき、Y方向絶縁溝は後工程で基板1周囲膜除去領域の膜面研磨除去処理を行うので、設ける必要がない。
後工程のEVA等を介したバックシート24との健全な接着・シール面を確保するために、基板1周辺(周囲膜除去領域14)の積層膜は、段差があるとともに剥離し易いため、この膜を除去して周囲膜除去領域14を形成する。基板1の端から5~20mmで基板1の全周囲にわたり膜を除去するにあたり、X方向は前述の図3(c)工程で設けた絶縁溝15よりも基板端側において、Y方向は基板端側部付近の溝10よりも基板端側において、裏面電極層4/光電変換層3/透明電極層2を、砥石研磨やブラスト研磨などを用いて除去を行う。
研磨屑や砥粒は基板1を洗浄処理して除去した。
端子箱23の取付け部分はバックシート24に開口貫通窓を設けて集電板を取出す。この開口貫通窓部分には絶縁材を複数層で設置して外部からの湿分などの浸入を抑制する。
直列に並んだ一方端の太陽電池発電セルと、他方端部の太陽電池発電セルとから銅箔を用いて集電して太陽電池パネル裏側の端子箱23の部分から電力が取出せるように処理する。銅箔は各部との短絡を防止するために銅箔幅より広い絶縁シートを配置する。
集電用銅箔などが所定位置に配置された後に、太陽電池モジュール6の全体を覆い、基板1からはみ出さないようにEVA(エチレン酢酸ビニル共重合体)等による接着充填材シートを配置する。
EVAの上に、防水効果の高いバックシート24を設置する。バックシート24は本実施形態では防水防湿効果が高いようにPETシート/Al箔/PETシートの3層構造よりなる。
バックシート24までを所定位置に配置したものを、ラミネータにより減圧雰囲気で内部の脱気を行い約150~160℃でプレスしながら、EVAを架橋させて密着させる。
太陽電池モジュール6の裏側に端子箱23を接着剤で取付ける。
(12)図5(b)
銅箔と端子箱23の出力ケーブルとをハンダ等で接続し、端子箱23の内部を封止剤(ポッティング剤)で充填して密閉する。これで太陽電池パネル50が完成する。
(13)図5(c)
図5(b)までの工程で形成された太陽電池パネル50について発電検査ならびに、所定の性能試験を行う。発電検査は、AM1.5、全天日射基準太陽光(1000W/m2)のソーラシミュレータを用いて行う。
(14)図5(d)
発電検査(図5(c))に前後して、外観検査をはじめ所定の性能検査を行う。
(実施例1)
図1に示す構成のシングル型太陽電池セルを作製した。
ガラス基板上に、透明電極層として、膜厚80nmの酸化スズ膜を形成した。
結晶質シリコンp層は、原料ガスにH2、SiH4及びB2H6を用い、水素希釈率:100倍、圧力:500Pa、基板温度:180℃、プラズマ発生周波数:60MHz、膜厚:20nmの条件にて製膜した。
結晶質シリコンi層は、原料ガスにH2及びSiH4を用い、水素希釈率:45倍、圧力:2100Pa、基板温度:180℃、プラズマ発生周波数:100MHz、膜厚:0.5μmまたは1.9μmの条件にて製膜した。
裏面電極層として、膜厚70nmのZnO膜、及び、膜厚250nmのAg膜を形成した。
図6及び図7に示すように、n層製膜時の水素希釈率10倍以下で高い曲線因子が得られた。また、水素希釈率が10倍を超えると、水素希釈率増加に伴い曲線因子が低下した。曲線因子の向上は、n型シリコンがエピタキシー成長せず、結晶質シリコンi層表面の凹凸形状における谷部にもn型シリコンが製膜されたためと予測できる。また、水素希釈率が低いほど曲線因子が高くなる傾向は、結晶質シリコンi層の膜厚が薄いほど顕著であった。これは、結晶質シリコンi層が厚くなるほど、i層表面が平坦化されるためと考えられた。
実施例1の結果は、n層製膜時の水素希釈率を0倍以上10倍以下とすることにより、光電変換効率を向上させることが可能であることを示している。
n層以外は、実施例1と同様の条件にて、透明電極層、結晶質シリコンp層、結晶質シリコンi層、裏面電極層を製膜し、シングル型太陽電池セルを作製した。なお、結晶質シリコンi層の膜厚は、1.9μmとした。
n層製膜の原料ガスに、H2、SiH4、PH3及びN2を用い、SiH4に対するN2の流量比:0~5%とした以外は、実施例2と同様にしてシングル型太陽電池セルを作製した。
図8及び図9の結果から、SiH4に対するCH4流量比0.5%以上1.2%以下、または、SiH4に対するN2流量比0.5%以上3%以下の割合でCH4またはN2を原料ガスに添加することにより、形状因子が向上した。形状因子が向上した理由は、結晶質シリコンi層上に非晶質シリコンn層が製膜されてカバレージが改善されたためと考えられた。
2 透明電極層
3 光電変換層
4 裏面電極層
6 太陽電池モジュール
41 p層
42 i層
43 n層
100 光電変換装置
Claims (4)
- プラズマCVD法により、基板上にシリコン系の光電変換層を形成する工程を含む光電変換装置の製造方法であって、
前記光電変換層を形成する工程が、
結晶質シリコンからなるi層を形成する工程と、
該i層上に、水素希釈率0倍以上10倍以下の条件でn層を形成する工程とを含むことを特徴とする光電変換装置の製造方法。 - 前記n層を、製膜速度0.2nm/sec以上で形成することを特徴とする請求項1に記載の光電変換装置の製造方法。
- 炭素及び窒素のうち少なくとも一方の元素を含むガスを原料ガスに用いて、前記n層を形成することを特徴とする請求項1または請求項2に記載の光電変換装置の製造方法。
- 前記n層を形成する工程が、第1n層を形成する工程と、第2n層を形成する工程とを含み、
前記第1n層は、水素希釈率0倍以上10倍以下の条件で形成され、
前記第2n層は、前記第1n層と異なる水素希釈率条件で形成されることを特徴とする請求項1乃至請求項3のいずれか1項に記載の光電変換装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009801289590A CN102105992B (zh) | 2008-11-27 | 2009-08-18 | 光电转换装置的制造方法 |
US13/003,936 US8252668B2 (en) | 2008-11-27 | 2009-08-18 | Photoelectric conversion device fabrication method |
EP09828917A EP2352175A1 (en) | 2008-11-27 | 2009-08-18 | Method for producing photoelectric conversion device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008303005A JP2010129785A (ja) | 2008-11-27 | 2008-11-27 | 光電変換装置の製造方法 |
JP2008-303005 | 2008-11-27 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010061667A1 true WO2010061667A1 (ja) | 2010-06-03 |
Family
ID=42225547
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/064425 WO2010061667A1 (ja) | 2008-11-27 | 2009-08-18 | 光電変換装置の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8252668B2 (ja) |
EP (1) | EP2352175A1 (ja) |
JP (1) | JP2010129785A (ja) |
KR (1) | KR20110036061A (ja) |
CN (1) | CN102105992B (ja) |
WO (1) | WO2010061667A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9263626B1 (en) | 2015-01-29 | 2016-02-16 | International Business Machines Corporation | Crystalline thin film photovoltaic cell |
CN106531834B (zh) * | 2016-11-30 | 2018-01-30 | 华中科技大学 | 一种hit太阳能电池及其制备方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1154773A (ja) * | 1997-08-01 | 1999-02-26 | Canon Inc | 光起電力素子及びその製造方法 |
JP2005159320A (ja) | 2003-10-27 | 2005-06-16 | Mitsubishi Heavy Ind Ltd | 太陽電池及び太陽電池の製造方法 |
JP2006210558A (ja) * | 2005-01-27 | 2006-08-10 | Toppan Printing Co Ltd | 非単結晶太陽電池およびその製造方法並びに非単結晶太陽電池製造装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2733176B2 (ja) * | 1992-11-16 | 1998-03-30 | キヤノン株式会社 | 光起電力素子及びそれを用いた発電装置 |
JP3169337B2 (ja) | 1995-05-30 | 2001-05-21 | キヤノン株式会社 | 光起電力素子及びその製造方法 |
US20050103377A1 (en) | 2003-10-27 | 2005-05-19 | Goya Saneyuki | Solar cell and process for producing solar cell |
DE102005013537A1 (de) * | 2004-03-24 | 2005-10-20 | Sharp Kk | Fotoelektrischer Wandler und Herstellverfahren für einen solchen |
US7968382B2 (en) * | 2007-02-02 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
-
2008
- 2008-11-27 JP JP2008303005A patent/JP2010129785A/ja active Pending
-
2009
- 2009-08-18 WO PCT/JP2009/064425 patent/WO2010061667A1/ja active Application Filing
- 2009-08-18 EP EP09828917A patent/EP2352175A1/en not_active Withdrawn
- 2009-08-18 KR KR1020117001678A patent/KR20110036061A/ko not_active Application Discontinuation
- 2009-08-18 US US13/003,936 patent/US8252668B2/en not_active Expired - Fee Related
- 2009-08-18 CN CN2009801289590A patent/CN102105992B/zh not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1154773A (ja) * | 1997-08-01 | 1999-02-26 | Canon Inc | 光起電力素子及びその製造方法 |
JP2005159320A (ja) | 2003-10-27 | 2005-06-16 | Mitsubishi Heavy Ind Ltd | 太陽電池及び太陽電池の製造方法 |
JP2006210558A (ja) * | 2005-01-27 | 2006-08-10 | Toppan Printing Co Ltd | 非単結晶太陽電池およびその製造方法並びに非単結晶太陽電池製造装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20110036061A (ko) | 2011-04-06 |
US8252668B2 (en) | 2012-08-28 |
CN102105992A (zh) | 2011-06-22 |
JP2010129785A (ja) | 2010-06-10 |
EP2352175A1 (en) | 2011-08-03 |
US20110111551A1 (en) | 2011-05-12 |
CN102105992B (zh) | 2013-03-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5330723B2 (ja) | 光電変換装置 | |
WO2010052953A1 (ja) | 光電変換装置の製造方法及び光電変換装置 | |
JP5022341B2 (ja) | 光電変換装置 | |
JP4764469B2 (ja) | 光電変換装置及び光電変換装置の製造方法 | |
WO2010050035A1 (ja) | 光電変換装置の製造方法 | |
WO2010061667A1 (ja) | 光電変換装置の製造方法 | |
WO2011070805A1 (ja) | 光電変換装置の製造方法 | |
WO2010064455A1 (ja) | 光電変換装置 | |
JP5308225B2 (ja) | 光電変換装置及びその製造方法 | |
JP5324966B2 (ja) | 光電変換装置の製造方法及び製膜装置 | |
WO2009081713A1 (ja) | 光電変換装置及びその製造方法 | |
JP4875566B2 (ja) | 光電変換装置の製造方法 | |
WO2009081855A1 (ja) | 光電変換装置の製造方法及び光電変換装置 | |
JP5308226B2 (ja) | 光電変換装置及びその製造方法 | |
WO2011033885A1 (ja) | 光電変換装置 | |
JP2008251914A (ja) | 多接合型光電変換装置 | |
JP2010251424A (ja) | 光電変換装置 | |
JP2009164251A (ja) | 光電変換装置の製造方法 | |
JP2010118695A (ja) | 光電変換装置及びその製造方法 | |
JP2011077380A (ja) | 光電変換装置 | |
JP2011096848A (ja) | 光電変換装置の製造方法 | |
JP2012253078A (ja) | 多接合型光電変換装置の製造方法 | |
JP2010199305A (ja) | 光電変換装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980128959.0 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09828917 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2009828917 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 20117001678 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13003936 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |