WO2010057955A2 - Laser semi-conducteur à émission par la tranche - Google Patents

Laser semi-conducteur à émission par la tranche Download PDF

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Publication number
WO2010057955A2
WO2010057955A2 PCT/EP2009/065488 EP2009065488W WO2010057955A2 WO 2010057955 A2 WO2010057955 A2 WO 2010057955A2 EP 2009065488 W EP2009065488 W EP 2009065488W WO 2010057955 A2 WO2010057955 A2 WO 2010057955A2
Authority
WO
WIPO (PCT)
Prior art keywords
edge
region
semiconductor laser
trench
waveguide
Prior art date
Application number
PCT/EP2009/065488
Other languages
German (de)
English (en)
Other versions
WO2010057955A3 (fr
Inventor
Hans-Christoph Eckstein
Uwe D. Zeitner
Wolfgang Schmid
Original Assignee
Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., Osram Opto Semiconductors Gmbh filed Critical Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V.
Priority to US13/130,444 priority Critical patent/US8363688B2/en
Priority to EP09752854A priority patent/EP2347479A2/fr
Priority to JP2011536869A priority patent/JP5529151B2/ja
Publication of WO2010057955A2 publication Critical patent/WO2010057955A2/fr
Publication of WO2010057955A3 publication Critical patent/WO2010057955A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1203—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers over only a part of the length of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1237—Lateral grating, i.e. grating only adjacent ridge or mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2036—Broad area lasers

Definitions

  • the invention has for its object to provide an improved edge-emitting semiconductor laser, which is characterized by a high beam quality, in particular an operation in the lateral fundamental mode. This object is achieved by an edge-emitting semiconductor laser according to the patent claim 1.
  • Advantageous embodiments and modifications of the invention are the subject of the dependent claims.
  • a local variation of the shape of the side flanks 16 of the trench 7 can be carried out by structuring a variable-dose photoresist by multi-stage exposure by means of electron beam or laser lithography or with gray-scale masks.
  • the section along the line MN shown in FIG. 5B illustrates that the trench 7 has a rectangular cross-sectional profile in the outer region of the upper jacket layer 3b.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un laser semi-conducteur à émission par la tranche, comportant un corps semi-conducteur (1) qui présente une zone de guide d'ondes (2). La zone de guide d'ondes (2) comporte une couche de couverture inférieure (3a), une couche de guide d'ondes inférieure (4a), une couche active (5) pour produire le rayon laser, une couche de guide d'ondes supérieure (4b) et une couche de couverture supérieure (3b). La zone de guide d'ondes (2) comprend en outre au moins une zone structurée (6) destinée à la diffusion du rayon laser, dans laquelle un mode fondamental latéral du rayon laser présente des pertes par diffusion moindres que le rayon laser de modes supérieurs.
PCT/EP2009/065488 2008-11-21 2009-11-19 Laser semi-conducteur à émission par la tranche WO2010057955A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US13/130,444 US8363688B2 (en) 2008-11-21 2009-11-19 Edge emitting semiconductor laser
EP09752854A EP2347479A2 (fr) 2008-11-21 2009-11-19 Laser semi-conducteur à émission par la tranche
JP2011536869A JP5529151B2 (ja) 2008-11-21 2009-11-19 端面発光型半導体レーザ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008058435.5 2008-11-21
DE102008058435A DE102008058435B4 (de) 2008-11-21 2008-11-21 Kantenemittierender Halbleiterlaser

Publications (2)

Publication Number Publication Date
WO2010057955A2 true WO2010057955A2 (fr) 2010-05-27
WO2010057955A3 WO2010057955A3 (fr) 2010-07-22

Family

ID=42112221

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2009/065488 WO2010057955A2 (fr) 2008-11-21 2009-11-19 Laser semi-conducteur à émission par la tranche

Country Status (5)

Country Link
US (1) US8363688B2 (fr)
EP (1) EP2347479A2 (fr)
JP (1) JP5529151B2 (fr)
DE (1) DE102008058435B4 (fr)
WO (1) WO2010057955A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2523279A2 (fr) 2011-05-09 2012-11-14 Forschungsverbund Berlin e.V. Laser à diodes large bande à grande efficacité et faible divergence de champ distant
CN106099640A (zh) * 2011-05-02 2016-11-09 奥斯兰姆奥普托半导体有限责任公司 激光光源

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009056387B9 (de) * 2009-10-30 2020-05-07 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit einem Phasenstrukturbereich zur Selektion lateraler Lasermoden
DE102012103549B4 (de) 2012-04-23 2020-06-18 Osram Opto Semiconductors Gmbh Halbleiterlaserlichtquelle mit einem kantenemittierenden Halbleiterkörper und Licht streuenden Teilbereich
DE102012110613A1 (de) * 2012-11-06 2014-05-08 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
US11837838B1 (en) * 2020-01-31 2023-12-05 Freedom Photonics Llc Laser having tapered region
CN113690731A (zh) * 2020-05-19 2021-11-23 通快两合公司 具有微结构的半导体盘形激光器
CN113675723B (zh) * 2021-08-23 2023-07-28 中国科学院半导体研究所 连续激射的微腔量子级联激光器及制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030219053A1 (en) * 2002-05-21 2003-11-27 The Board Of Trustees Of The University Of Illinois Index guided laser structure
US6810054B2 (en) * 2000-03-31 2004-10-26 Presstek, Inc. Mode-limiting diode laser structure
US20050041709A1 (en) * 2003-08-19 2005-02-24 Anikitchev Serguei G. Wide-stripe single-mode diode-laser
US20070133648A1 (en) * 2005-12-09 2007-06-14 Fujitsu Limited Optical device coupling light propagating in optical waveguide with diffraction grating

Family Cites Families (8)

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Publication number Priority date Publication date Assignee Title
JPS5029283A (fr) * 1973-07-19 1975-03-25
US5247536A (en) * 1990-07-25 1993-09-21 Kabushiki Kaisha Toshiba Semiconductor laser distributed feedback laser including mode interrupt means
US6122299A (en) * 1997-12-31 2000-09-19 Sdl, Inc. Angled distributed reflector optical device with enhanced light confinement
US6920160B2 (en) 2000-06-15 2005-07-19 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Laser resonators comprising mode-selective phase structures
JP3857225B2 (ja) * 2002-12-19 2006-12-13 富士通株式会社 半導体レーザ及びその製造方法
JP2005327783A (ja) * 2004-05-12 2005-11-24 Sony Corp 半導体レーザ
JP2007234724A (ja) * 2006-02-28 2007-09-13 Canon Inc 垂直共振器型面発光レーザ、該垂直共振器型面発光レーザにおける二次元フォトニック結晶の製造方法
DE102008025922B4 (de) 2008-05-30 2020-02-06 Osram Opto Semiconductors Gmbh Kantenemittierender Halbleiterlaser mit Phasenstruktur

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6810054B2 (en) * 2000-03-31 2004-10-26 Presstek, Inc. Mode-limiting diode laser structure
US20030219053A1 (en) * 2002-05-21 2003-11-27 The Board Of Trustees Of The University Of Illinois Index guided laser structure
US20050041709A1 (en) * 2003-08-19 2005-02-24 Anikitchev Serguei G. Wide-stripe single-mode diode-laser
US20070133648A1 (en) * 2005-12-09 2007-06-14 Fujitsu Limited Optical device coupling light propagating in optical waveguide with diffraction grating

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106099640A (zh) * 2011-05-02 2016-11-09 奥斯兰姆奥普托半导体有限责任公司 激光光源
EP2523279A2 (fr) 2011-05-09 2012-11-14 Forschungsverbund Berlin e.V. Laser à diodes large bande à grande efficacité et faible divergence de champ distant
DE102011075502A1 (de) 2011-05-09 2012-11-15 Forschungsverbund Berlin E.V. Breitstreifen-Diodenlaser mit hoher Effizienz und geringer Fernfelddivergenz
US8537869B2 (en) 2011-05-09 2013-09-17 Forschungsverbund Berlin E.V. Broad area diode laser with high efficiency and small far-field divergence

Also Published As

Publication number Publication date
DE102008058435B4 (de) 2011-08-25
JP5529151B2 (ja) 2014-06-25
WO2010057955A3 (fr) 2010-07-22
US20110317732A1 (en) 2011-12-29
US8363688B2 (en) 2013-01-29
DE102008058435A1 (de) 2010-06-02
JP2012509583A (ja) 2012-04-19
EP2347479A2 (fr) 2011-07-27

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