WO2022243025A1 - Procédé de production de diode laser à semi-conducteur et diode laser à semi-conducteur - Google Patents

Procédé de production de diode laser à semi-conducteur et diode laser à semi-conducteur Download PDF

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Publication number
WO2022243025A1
WO2022243025A1 PCT/EP2022/061837 EP2022061837W WO2022243025A1 WO 2022243025 A1 WO2022243025 A1 WO 2022243025A1 EP 2022061837 W EP2022061837 W EP 2022061837W WO 2022243025 A1 WO2022243025 A1 WO 2022243025A1
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Prior art keywords
laser diode
semiconductor laser
area
facet
active zone
Prior art date
Application number
PCT/EP2022/061837
Other languages
German (de)
English (en)
Inventor
Lars Nähle
Harald KÖNIG
Sven GERHARD
Original Assignee
Osram Opto Semiconductors Gmbh
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Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Publication of WO2022243025A1 publication Critical patent/WO2022243025A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/164—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising semiconductor material with a wider bandgap than the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H01S5/1014—Tapered waveguide, e.g. spotsize converter
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1039—Details on the cavity length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure

Definitions

  • a semiconductor laser diode is to be specified in which, in particular, the risk of damage to the facet during operation is reduced. Furthermore, a simplified method for producing such a semiconductor laser diode is to be specified.
  • a growth substrate having a growth area is provided.
  • the growth area is a main area of the growth substrate.
  • the growth substrate preferably has a lattice constant which is the same as or similar to a lattice constant of the epitaxial semiconductor layer sequence to be grown.
  • At least one structure in a facet area of the Introduced growth area can be introduced into the facet region of the growth area by etching, for example by dry etching.
  • the growth area of the growth substrate has, in particular, a multiplicity of facet regions into which one or more structures are introduced.
  • the growth substrate can be provided as a wafer with a growth area that has a multiplicity of facet regions.
  • a multiplicity of semiconductor laser diodes can advantageously be produced simultaneously at the wafer level, which are finally isolated to form individual semiconductor laser diodes.
  • an epitaxial semiconductor layer sequence with an active zone, which generates electromagnetic radiation during operation is epitaxially grown on the growth area.
  • the structure of semiconductor material of the epitaxial semiconductor layer sequence is overgrown during the epitaxial growth of the epitaxial semiconductor layer sequence, so that the active zone has a band gap in a non-absorbing mirror region that is larger than in the remaining region of the active zone.
  • the non-absorbing mirror area is at least partially congruent with the facet area, for example in a plan view.
  • the non-absorbing mirror area is surrounded by a resonator of the finished semiconductor laser diode and is adjacent to a facet of the semiconductor laser diode.
  • the non-absorbing mirror area has a length in a main extension direction of the resonator of between 10 micrometers and 100 micrometers inclusive.
  • the non-absorbing mirror area is transparent to electromagnetic radiation of the active zone.
  • the term “transparent” means in particular that the element designated in this way transmits at least 80%, preferably at least 85% and particularly preferably 95% of the electromagnetic radiation.
  • the structure in the facet region of the growth area results in the semiconductor material of the active zone having an increased band gap in the non-absorbing mirror region.
  • the structure in the facet region of the growth surface changes the band gap, for example, in an area within a distance between 5 microns and 40 microns inclusive, or between 5 microns and 30 microns inclusive, or between 5 microns and 10 microns inclusive.
  • the active zone has at least one quantum structure for generating the electromagnetic Radiation during operation of the semiconductor laser diode.
  • the term quantum structure does not contain any information about the dimensionality of the quantization. It thus includes quantum wells, quantum wires and quantum dots and any combination of these quantum structures.
  • at least the quantum structure in the non-absorbing mirror area has a band gap that is larger than in the remaining area of the quantum structure.
  • the band gap of the entire active zone is also preferably larger in the non-absorbing mirror area than in the remaining area of the active zone.
  • the band gap of the entire epitaxial semiconductor layer sequence is particularly preferably larger in the non-absorbing mirror region than in the remaining region of the epitaxial semiconductor layer sequence.
  • waveguide layers between which the active zone is arranged can also have a band gap in the non-absorbing mirror area that is larger than in the remaining area.
  • the epitaxial semiconductor layer sequence can be embodied on or above the facet region adjoining a facet of the future semiconductor laser diode so that it is transparent to the electromagnetic radiation generated in the active zone.
  • the method has the following steps:
  • the structure is overgrown by the semiconductor material of the epitaxial semiconductor layer sequence, so that the active zone has a band gap in a non-absorbing mirror region that is larger than in the remaining region of the active zone.
  • the trenches are removed again in a further step.
  • the epitaxial semiconductor layer sequence is based on a semiconductor material with an indium content and the indium content is lower in the non-absorbing mirror area, so that the band gap of the semiconductor material in the non-absorbing mirror area is larger than in the remaining area of the active zone.
  • the band gap of the semiconductor material is increased in a region of the epitaxial semiconductor layer sequence, which is comprised by a resonator in the finished semiconductor laser diode and adjoins a facet.
  • a thickness of the active zone or a quantum structure of the active zone, an aluminum content of the semiconductor material, a Atomic concentration of the semiconductor material and / or a strain in the semiconductor material are changed so that the band gap is increased as desired.
  • the thickness of the active region or the quantum structure of the active region varies between 1% and 5% inclusive per one micron of distance from the structure.
  • the atomic concentration of the semiconductor material varies between 5% inclusive and 15% inclusive per 5 micrometers distance from the structure.
  • the epitaxial semiconductor layer sequence and in particular the active zone are based on a nitride compound semiconductor material.
  • Semiconductor layer sequence and in particular the active zone consist of a nitride compound semiconductor material.
  • nitride compound semiconductor materials are nitride compound semiconductor materials
  • Compound semiconductor materials containing nitrogen such as the materials from the system In x Al y Gai- xy N with 0 ⁇ x ⁇
  • An active zone which is based on a nitride compound semiconductor material or consists of a nitride compound semiconductor material is particularly suitable for generating electromagnetic radiation from the ultraviolet to green spectral range.
  • gallium nitride, sapphire or silicon carbide are suitable as a growth substrate for an epitaxial semiconductor layer sequence based on a nitride compound semiconductor material.
  • the epitaxial semiconductor layer sequence and in particular the active zone are based on a phosphide compound semiconductor material or consist of a phosphide compound semiconductor material. are phosphide compound semiconductor materials
  • Compound semiconductor materials containing phosphorus such as the materials from the system In x Al y Gai- xy P with 0 ⁇ x ⁇ 1.0
  • An active zone which is based on a phosphide compound semiconductor material or consists of a phosphide compound semiconductor material is particularly suitable for generating electromagnetic radiation from the green to red spectral range.
  • gallium phosphide is suitable as a growth substrate for an epitaxial semiconductor layer sequence that is based on a phosphide compound semiconductor material.
  • the epitaxial semiconductor layer sequence and in particular the active zone can be based on an arsenide compound semiconductor material or consist of an arsenide compound semiconductor material.
  • Arsenide compound semiconductor materials are
  • Compound semiconductor materials containing arsenic such as the materials from the system In x Al y Gai- xy As with 0 ⁇ x ⁇ 1.0
  • An active zone which is based on an arsenide compound semiconductor material or consists of an arsenide compound semiconductor material is particularly suitable for generating electromagnetic radiation from the red to infrared spectral range.
  • gallium arsenide is suitable as a growth substrate for an epitaxial semiconductor layer sequence based on an arsenide compound semiconductor material.
  • the epitaxial semiconductor layer sequence and in particular the active zone can be based on an antimonide compound semiconductor material or consist of an antimonide compound semiconductor material. are antimonide compound semiconductor materials
  • Compound semiconductor materials containing antimony such as the materials from the system In x Al y Gai- xy Sb with 0 ⁇ x ⁇ 1, 0 ⁇ y ⁇ 1 and x+y ⁇ 1.
  • An active region based on an antimonide compound semiconductor material or consists of an antimonide compound semiconductor material is particularly suitable for generating electromagnetic radiation from the infrared spectral range.
  • gallium antimonide is suitable as a growth substrate for an epitaxial semiconductor layer sequence that is based on an antimonide compound semiconductor material.
  • the method is based, among other things, on the idea of reducing an indium content of the semiconductor material of the epitaxial semiconductor layers in a non-absorbing mirror region, which usually borders the facet and is surrounded by a resonator in the finished semiconductor laser diode, compared to the remaining semiconductor material, so that the Band gap of the semiconductor material is increased.
  • the resonator of the finished semiconductor laser diode is transparent in the non-absorbing mirror area for the electromagnetic radiation generated in the active zone.
  • the risk of damage to the facet for example due to COD (“catastrophic optical damage”) and/or COMD (“catastrophic optical mirror damage”), is significantly reduced.
  • other parameters of the epitaxial semiconductor layer sequence such as the layer thickness, the Stress, the atomic concentration and/or aluminum content are locally changed by the structure and the band gap of the semiconductor material is increased.
  • the structure has a trench-shaped recess.
  • the structure has a trench-shaped recess that is arranged laterally next to a resonator area of the growth area.
  • a resonator in particular is arranged in the finished semiconductor laser diode in a top view on or above the resonator of the growth area.
  • the trench-shaped recess is at a distance from the resonator region, for example, of between 1 micrometer and 100 micrometers inclusive.
  • the trench-shaped recess extends over a length of between 5 micrometers and 100 micrometers inclusive along a main direction of extension of the resonator region.
  • the trench-shaped recess has a depth of between 1 micrometer and 10 micrometers inclusive.
  • a facet of the semiconductor laser diode is produced by breaking through the facet areas or by etching through the facet areas.
  • the multiplicity of semiconductor laser diodes can be completely or partially isolated by breaking or by etching.
  • the facet it is possible for the facet to form a side surface of the semiconductor laser diode.
  • the facet it is also possible for the facet to be arranged set back in relation to the side surface.
  • the method described here is intended and suitable for producing a semiconductor laser diode. All features that are described in connection with the method can therefore also be implemented in the semiconductor laser diode and vice versa.
  • the semiconductor laser diode comprises a growth substrate with a growth area into which a structure is introduced in a facet area.
  • the semiconductor laser diode has an epitaxial
  • Semiconductor layer sequence which is epitaxially grown on the growth surface and comprises an active zone which generates electromagnetic radiation during operation of the semiconductor laser diode.
  • the structure of semiconductor material overgrows the epitaxial semiconductor layer sequence.
  • the active zone has a band gap in a non-absorbing mirror area that is larger than in the remaining area of the active zone.
  • the semiconductor laser diode comprises a growth substrate with a growth area, in which a structure is introduced in a facet area, and an epitaxial semiconductor layer sequence, which is epitaxially grown on the growth area and includes an active zone that generates electromagnetic radiation during operation.
  • the structure in this embodiment of the semiconductor laser diode is overgrown by semiconductor material of the epitaxial semiconductor layer sequence and the active zone has a band gap in a non-absorbing mirror area that is larger than in the remaining area of the active zone.
  • the semiconductor laser diode preferably has two non-absorbing mirror regions which lie opposite one another and each adjoin a facet of the semiconductor laser diode.
  • the semiconductor laser diode includes two facets that form a resonator.
  • the facets are arranged opposite one another.
  • the facets are preferably designed to be at least partially reflective for the electromagnetic radiation that is generated in the active zone.
  • a standing wave of the electromagnetic radiation that is generated in the active zone forms in the resonator between the two facets.
  • the resonator is arranged in particular in a top view on or above a resonator area of the growth area of the growth substrate.
  • one of the facets is designed to be highly reflective for the electromagnetic radiation of the active zone, while another facet is partially transparent for the electromagnetic radiation of the active zone.
  • electromagnetic radiation is coupled out of the partially transparent facet through the partially transparent facet.
  • the resonator includes an amplifier section.
  • the amplifier area is in particular the area of the resonator in which a population inversion is generated in the semiconductor material of the active zone during operation. Due to the population inversion, the electromagnetic radiation in the active zone is generated by stimulated emission, which leads to the formation of electromagnetic laser radiation.
  • the active zone within the amplifier region has a bandgap that is not increased as in the non-absorbing mirror region.
  • the amplifier region is preferably between two non-absorbing ones Arranged mirror areas. For example, the amplifier area and the two non-absorbing mirror areas are encompassed by the resonator or are congruent with the resonator.
  • the electrical contact is arranged centrally between the two facets on the main surface of the epitaxial semiconductor layer sequence.
  • the electrical contact is set up and provided for impressing electrical current into the epitaxial semiconductor layer sequence and in particular into the active zone during operation.
  • the electrical contact is arranged in a top view so that it overlaps or is congruent with the amplifier area.
  • the electromagnetic laser radiation Due to the generation of the electromagnetic laser radiation by stimulated emission, the electromagnetic laser radiation, in contrast to electromagnetic radiation that is generated by spontaneous emission, usually has a very long coherence length, a very narrow emission spectrum and/or a high degree of polarization.
  • the electromagnetic laser radiation generated in the amplifier area is at least partially reflected at the facets of the resonator, so that a standing wave of the electromagnetic laser radiation forms in the resonator.
  • the resonator only has a wave-guiding effect for the electromagnetic laser radiation.
  • the resonator also has the non-absorbing mirror areas in which a standing wave of the electromagnetic laser radiation forms due to the reflection at the facets, but not due to the population inversion is reinforced.
  • the non-absorbing mirror areas are only designed to be wave-guiding for the electromagnetic laser radiation.
  • the amplifier area is preferably completely surrounded by the resonator, which is defined by the facets.
  • a length of the amplifier region is shorter than an edge of the semiconductor laser diode.
  • the length of the amplifier region is at most 300 micrometers, preferably at most 100 micrometers.
  • the edge length of the semiconductor laser diode is at least 300 micrometers, preferably at least 600 micrometers.
  • the structure has a trench-shaped recess in the Growth surface that has an edge that is directly adjacent to the facet.
  • the facet may be formed on a side face of the semiconductor laser diode. If the facet is formed on a side face of the semiconductor laser diode, the facet is formed by breaking in particular. Furthermore, it is also possible for the facet to be set back from the side surface. A facet that is set back from the side surface of the semiconductor laser diode is produced, in particular, by etching.
  • the structure has a trench-shaped recess in the growth area, the trench-shaped recess having an edge which is arranged set back from a facet in a plan view. In this embodiment of the semiconductor laser diode, breaking to form the facet is facilitated.
  • the structure has a trench-shaped recess in the growth area, which has a triangular base area in a plan view of the growth area.
  • the width of the trench-shaped recess varies here.
  • the width decreases starting from the facet.
  • the indium content increases with the distance from the facet, so that the band gap of the semiconductor material decreases with the distance from the facet.
  • the semiconductor laser diode comprises a ridge waveguide, the structure being arranged to the side of the ridge waveguide.
  • the ridge waveguide is formed by a ridge-shaped projection that is produced, for example, by etching the epitaxial semiconductor layer sequence.
  • an electrical contact is arranged on the surface of the ridge waveguide, which is provided and set up to impress current into the active zone during operation.
  • the ridge waveguide is encompassed by the resonator or forms part of the resonator.
  • the structure has a trench-shaped recess, with a main extension direction of the trench-shaped recess being arranged obliquely to a side face of the semiconductor laser diode in a plan view.
  • the structure has a trench-shaped recess, the width of which varies along the main extension direction in a plan view of the growth area.
  • the structure it is possible for the structure to have a number of structural elements, for example a number of trench-shaped recesses.
  • the structural elements of a structure can be designed in the same way or differently. If the structure comprises a plurality of structural elements, these are preferably arranged symmetrically with respect to an axis of symmetry of the resonator.
  • the structure has a trench-shaped recess whose Distance to a resonator, which is formed by facets, varies along a main direction of extension of the resonator.
  • the trench-shaped recess in the facet area is at a smaller distance from the resonator than in a central area of the growth area. If the distance between the trench-shaped recess and the resonator is smaller, then the indium content is reduced and the band gap of the semiconductor material is thus increased.
  • one of the other above-mentioned parameters of the epitaxial semiconductor layer sequence such as thickness, aluminum content, atomic concentration and/or strain, can also be varied and lead to or at least contribute to an increase in the band gap.
  • FIG. 1 The schematic sectional views of Figures 1, 3 and 4 show stages of a method according to an embodiment.
  • FIG. 2 shows a schematic top view of a growth area according to an exemplary embodiment.
  • FIG. 5 shows a schematic plan view of a semiconductor laser diode according to an exemplary embodiment.
  • FIG. 6 shows a detail of a schematic sectional illustration of the semiconductor laser diode according to the exemplary embodiment in FIG.
  • FIG. 7 shows an example of the wavelength of an electromagnetic radiation of an active zone as a function of the distance from a recess in the form of a trench.
  • FIGS. 8 to 22 show schematic plan views of semiconductor laser diodes according to various exemplary embodiments.
  • a growth substrate 1 is provided in a first step (FIG. 1).
  • the growth substrate 1 has a growth area 2 on which an epitaxial semiconductor layer sequence 3 is to be epitaxially deposited.
  • the growth area 2 forms a main area of the growth substrate 1 .
  • the growth substrate 1 is in the form of a wafer.
  • the method according to the exemplary embodiment in FIGS. 1 to 4 is therefore a method that is carried out at wafer level and in which a large number of semiconductor laser diodes 4 are produced.
  • the schematic plan view of the growth area 2 in FIG. 2 shows a large number of separating lines 5 along which the finished semiconductor laser diodes 4 are separated at a later point in time. Furthermore includes the Growth surface 2 has a multiplicity of facet regions 6, on which a facet 17 is arranged in the respective subsequent semiconductor laser diode 4. In addition, the growth area 2 has a multiplicity of resonator regions 8 . A resonator 9 is arranged on a resonator region 8 in a finished semiconductor laser diode 4 .
  • the structures 10 are trench-shaped recesses 11 which extend from the growth area 2 into the growth substrate 1 . Furthermore, the trench-like recesses 11 are arranged in the facet areas 6 of the growth area 2 .
  • an epitaxial semiconductor layer sequence 3 is epitaxially deposited on the growth area 2 (see FIG. 4).
  • the epitaxial semiconductor layer sequence 3 is based on a nitride compound semiconductor material, for example.
  • the epitaxial semiconductor layer sequence 3 comprises an active zone 12 which, during operation, generates electromagnetic radiation from the ultraviolet to green spectral range.
  • Semiconductor layer sequence 3 grows over the trench-shaped recesses 11 during epitaxial growth, so that the active zone 12 in the area of the structure 10 has a band gap that is larger than in the remaining area of the active zone 12.
  • the band gap of the active zone 12 is on or above the Facet areas 6 larger than in the rest of the active zone 12.
  • the semiconductor laser diodes 4 produced in the wafer assembly are separated from one another, so that a large number of semiconductor laser diodes 4 are produced (not shown).
  • the semiconductor laser diode 4 according to the exemplary embodiment in FIGS. 5 to 7 can be produced, for example, using a method as was described with reference to FIGS.
  • the semiconductor laser diode 4 according to the exemplary embodiment in FIGS. 5 to 7 has a growth substrate 1 with a growth area 2 .
  • the growth area 2 comprises two facet regions 6 which lie opposite one another.
  • Each facet area 6 also has a structure 10 which is introduced into the growth area 2 .
  • the structure 10 comprises two structural elements 13 which are each formed as trench-shaped recesses 11 in the growth area 2 (FIG. 5).
  • the semiconductor laser diode 4 also includes an epitaxial semiconductor layer sequence 3, which has grown epitaxially on the growth area 2 and includes an active zone 12, which generates electromagnetic radiation during operation of the semiconductor laser diode 4 (FIG. 6).
  • the epitaxial semiconductor layer sequence 3 is formed from a nitride compound semiconductor material.
  • Facets 17 are arranged on side surfaces 16 of the semiconductor laser diode 4 .
  • the facets 17 are opposite one another and form a resonator 18 .
  • the resonator 18 is arranged on a resonator area 8 of the growth area 2 .
  • the semiconductor laser diode is formed in the resonator 18 during operation a standing wave of electromagnetic laser radiation.
  • the semiconductor laser diode 4 also includes a ridge waveguide 14 on which an electrical contact 15 is arranged.
  • the ridge waveguide is encompassed by the resonator.
  • the ridge waveguide 14 is formed, for example, as a ridge-shaped projection in the epitaxial semiconductor layer sequence 3 and is set up to guide electromagnetic laser radiation within a resonator 18 .
  • the electrical contact 15 is set up and provided to energize the epitaxial semiconductor layer sequence 3 during operation and in particular to pump the active zone 12 electrically, so that a population inversion for generating electromagnetic laser radiation in the active zone 12 is achieved.
  • the electrical contact 15 is arranged on or above an amplifier region 19 which is encompassed by the resonator 18 .
  • the amplifier region 19 a population inversion is formed within the active zone 12 when the semiconductor laser diode 4 is in operation.
  • the resonator 18 comprises non-absorbing mirror regions 24 which only have a wave-guiding character.
  • the trench-shaped recesses 11 in the growth area 2 extend laterally along the resonator 18 to the amplifier region 19. In other words, the trench-shaped recesses 11 extend to the Amplifier Sectionl9 .
  • the trench-shaped recess 11 is directly adjacent to the facet 17 .
  • Figure 7 shows an example of a wavelength l of the electromagnetic radiation generated in the active zone 12 in nanometers as a function of the distance y to an edge 21 of the trench-shaped recess 11.
  • Figure 7 shows in particular that the wavelength l of the electromagnetic radiation generated in the active zone with the distance y to the edge 21 of the trench-shaped recess 11 increases. Consequently, a band gap of the semiconductor material decreases accordingly and the indium content of the semiconductor material of the epitaxial semiconductor layer sequence 3 increases.
  • the active zone 12 in the area of the trench-shaped recess 11 has a band gap that is larger than in the remaining area of the active zone 12.
  • an indium content of the semiconductor material of the epitaxial semiconductor layer sequence 3 is at a distance x from the edge 21 of the trench-shaped recess 11 increases.
  • another parameter of the epitaxial semiconductor layer sequence 3 to vary due to the structure 10, as already disclosed in the general part of the description.
  • FIGS. 1-10 For the sake of simplicity, only a partial area of the respective semiconductor laser diode 4 with a side surface 16 is shown in FIGS.
  • the semiconductor laser diodes 4 according to the exemplary embodiments of FIGS. 8 to 10 have facets 17 which are arranged on a side surface 16 of the semiconductor laser diode 4. In the present case, the facets 17 are produced by breaking.
  • the semiconductor laser diode 4 according to the exemplary embodiment in FIG. 8 has, like the semiconductor laser diode 4 according to the exemplary embodiment in FIGS.
  • the trench-shaped recesses 11 are arranged directly adjacent to a side face 16 of the semiconductor laser diode 4 .
  • the trench-shaped recesses 11 are directly adjacent to the facet 17 .
  • the facet 17 is designed to be partially transparent to electromagnetic laser radiation that is generated by the semiconductor laser diode 4 .
  • the facet 17 is designed as a radiation exit area of the semiconductor laser diode 4 .
  • the trench-shaped recesses 11 have a constant width. In a plan view, the trench-shaped recesses 11 have a rectangular base area.
  • the trench-shaped recesses 11 are arranged symmetrically to an axis of symmetry 22 of a resonator 18 in the present semiconductor laser diode 4 .
  • the resonator 18 is formed by the two opposite facets 17 .
  • the trench-shaped recesses 11 extend along a non-absorbing mirror region 24 of the resonator 18, which is only designed to be wave-guiding.
  • Another edge 21 of the trench-shaped recesses 11 adjoins an electrical contact 15 on a main area of the epitaxial semiconductor layer sequence 3 .
  • the semiconductor laser diode 4 according to the embodiment of FIG.
  • Semiconductor laser diode according to the exemplary embodiment of FIG. 9 has a structure 10 which comprises four trench-shaped recesses 11 in a growth area 2 of a growth substrate 1.
  • the trench-shaped recesses 11 are of the same design and are arranged symmetrically to an axis of symmetry 22 of a resonator 18 .
  • the semiconductor laser diode 4 according to the exemplary embodiment in FIG. 10 has trench-shaped recesses 11, which have a triangular base area in a plan view. Therefore, a width of the trench-shaped recess 11 increases starting from a side surface
  • the indium content in the nitride compound semiconductor material of the epitaxial semiconductor layer sequence 3 is thus varied in a non-absorbing mirror region 24 .
  • the facets 17 are produced by breaking.
  • the semiconductor laser diode 4 according to the exemplary embodiment in FIG. 11 has, in contrast to the semiconductor laser diode 4 according to the exemplary embodiment in FIG are set back to a facet 17 of the semiconductor laser diode 4 are arranged.
  • edges 20 of the trench-shaped recesses 11 of the semiconductor laser diode 4 according to the exemplary embodiment in FIG. 9 are identical to the semiconductor laser diode 4 according to the exemplary embodiment in FIG. 9, the edges 20 of the trench-shaped recesses 11 of the semiconductor laser diode 4 according to the exemplary embodiment in FIG.
  • the trench-shaped recesses 11 of the semiconductor laser diode 4 according to the exemplary embodiment in FIG. 10 are in contrast to the semiconductor laser diode 4 according to the exemplary embodiment in FIG. 10.
  • the semiconductor laser diode 4 according to the embodiment of Figure 14 corresponds to the semiconductor laser diode 4 according to the embodiment of Figure 11
  • the semiconductor laser diode 4 according to the embodiment of Figure 15 corresponds to the semiconductor laser diode 4 according to the embodiment of Figure 12.
  • the semiconductor laser diode 4 corresponds according to the embodiment of Figure 16 to the semiconductor laser diode 4 according to the embodiment of Figure 13.
  • the semiconductor laser diode 4 according to the exemplary embodiment in FIG. 17 has, in particular, a comparatively short amplifier region 19, since the non-absorbing mirror regions 24 extend comparatively far into the resonator 18.
  • the structure 10 has in each case a multiplicity of structural elements 13 which have a rectangular base area in a plan view.
  • the structural elements 13 are connected continuously.
  • the structural elements 13 are at a distance from the resonator 18 which increases starting from a side face 16 of the semiconductor laser diode 4 . This results in an indium content within the semiconductor material of the epitaxial semiconductor layer sequence 3 that decreases continuously towards the side face 16 of the semiconductor laser diode.
  • the indium content is reduced in the non-absorbing mirror regions 24 not only in the active zone 12 and its quantum structures, but also in the surrounding waveguide layers between which the active zone 12 is arranged.
  • the guidance of the electromagnetic laser radiation in the resonator 18 can be advantageously influenced. If the indium content is lower, the electromagnetic radiation is guided weaker and a near field of the electromagnetic radiation emitted by the semiconductor laser diode 4 is wider, while a far field is narrower is trained. This contributes to reducing the stress on the facet 17 during the operation of the semiconductor laser diode 4.
  • the semiconductor laser diode 4 according to the exemplary embodiment in FIG. A varying distance between the trench-shaped recess 11 and a resonator 18 can also be produced in this way, which leads to the already described variation of the indium content or another of the parameters already described in the epitaxial semiconductor layer sequence 3 .
  • the trench-shaped recesses 11 have a spacing that varies along the main direction of extension 23 of a resonator 18 . This varying distance also leads to a variation in the indium content or another of the described parameters of the epitaxial semiconductor layer sequence 3, as already described.
  • the semiconductor laser diode 4 according to the exemplary embodiment in FIG. 20 has, in particular, a trench-shaped recess 11 which extends continuously along the entire resonator 18 .
  • the semiconductor laser diode 4 according to the exemplary embodiment in FIG. 20 has additional strip-shaped structural elements 23, which run parallel to the resonator 18 in a central area of the growth area 2 .
  • the semiconductor laser diode 4 according to the exemplary embodiment in FIG. 21 has trench-shaped recesses 11 which, in regions adjoining the side surface 16, comprise structural elements 23 which have a greater width than structural elements 23 which are arranged in a central region of the growth surface 2.
  • the trench-shaped recesses 11 extend along the entire resonator 18.
  • the semiconductor laser diode 4 according to the exemplary embodiment in FIG. 22 has structural elements 23 which have a triangular base area in a plan view of a growth area 2 .
  • the structural elements 23 with the triangular base continuously connect strip-shaped structural elements 23 with a greater width in the area of the facet regions 6 with strip-shaped structural elements 23 with a smaller width in a central region of the growth area 2 .

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

L'invention concerne un procédé de production d'une diode laser à semi-conducteur, comprenant les étapes suivantes consistant à : - Fournir un substrat de croissance (1) ayant une surface d'épitaxie (2) ; - introduire au moins une structure (10) au moins dans une zone de facette (6) de la surface d'épitaxie (2) ; - faire croitre de manière épitaxiale, sur la surface d'épitaxie (2), une séquence de couches semi-conductrices épitaxiales (3) ayant une zone active (12) qui génère un rayonnement électromagnétique pendant le fonctionnement, le matériau semi-conducteur de la séquence de couches semi-conductrices épitaxiales (3) croissant sur la structure (10) de telle sorte que la zone active (12) présente un espace d'énergie dans une région de miroir non absorbant (24), lequel espace d'énergie est plus grand que dans le reste de la zone active (12). L'invention concerne également une diode laser à semi-conducteur.
PCT/EP2022/061837 2021-05-21 2022-05-03 Procédé de production de diode laser à semi-conducteur et diode laser à semi-conducteur WO2022243025A1 (fr)

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DE102021113297.5A DE102021113297A1 (de) 2021-05-21 2021-05-21 Verfahren zur herstellung einer halbleiterlaserdiode und halbleiterlaserdiode
DE102021113297.5 2021-05-21

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020080835A1 (en) * 2000-08-23 2002-06-27 Jugo Mitomo Semiconductor laser and method of production thereof
US20100074290A1 (en) * 2007-11-02 2010-03-25 Masao Kawaguchi Semiconductor laser device
US20110058586A1 (en) * 2008-05-19 2011-03-10 Toshiyuki Takizawa Nitride semiconductor laser
US20130009203A1 (en) * 2010-03-23 2013-01-10 Panasonic Corporation Semiconductor light-emitting element and manufacturing method thereof

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11204878A (ja) 1998-01-09 1999-07-30 Sony Corp 半導体レーザ及びその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020080835A1 (en) * 2000-08-23 2002-06-27 Jugo Mitomo Semiconductor laser and method of production thereof
US20100074290A1 (en) * 2007-11-02 2010-03-25 Masao Kawaguchi Semiconductor laser device
US20110058586A1 (en) * 2008-05-19 2011-03-10 Toshiyuki Takizawa Nitride semiconductor laser
US20130009203A1 (en) * 2010-03-23 2013-01-10 Panasonic Corporation Semiconductor light-emitting element and manufacturing method thereof

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