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Definitions

• the present invention relates to quinoxaline compounds, organic semiconductor doped materials, organic light emitting diodes, organic thin film transistors, and organic solar cells in which these quinoxaline compounds are used.
• organic light-emitting diodes and solar cells Since the demonstration of organic light-emitting diodes and solar cells [CW. Tang et al., Appl. Phys. Lett. 51 (12), 913 (1987)], components made of organic thin films are the subject of intensive research. Such layers have advantageous properties for the mentioned applications, e.g. efficient electroluminescence for organic light-emitting diodes, high absorption coefficients in the visible light range for organic solar cells, low-cost production of the materials and manufacture of the components for simplest electronic circuits, i.a. The use of organic light-emitting diodes for display applications is already of commercial significance.
• the performance characteristics of (opto) electronic multilayer components are determined inter alia by the ability of the layers to transport the charge carriers.
• the ohmic losses in the charge transport layers during operation are related to the conductivity, which on the one hand has a direct influence on the required operating voltage, but on the other hand also determines the thermal load on the component.
• band bending occurs in the vicinity of a metal contact, which facilitates the injection of charge carriers and thus can reduce the contact resistance. Similar considerations lead to the conclusion for organic solar cells that their efficiency is also determined by the transport properties for charge carriers.
• inorganic materials alkali metals: J. Kido et al, US 6,013,384, J. Kido et al., Appl. Phys. Lett. 73, 2866 (1998), oxidizing agents such as iodine, SbCl 5 etc.
• bb) organic materials TMCQ: M. Maitrot et al., J. Appl. Phys., 60 (7), 2396-2400 (1986), F4TCNQ: M. Pfeiffer et al., Appl. Phys. Lett., 73 (22), 3202 (1998), BEDT-TTF: A. Nollau et al., J. Appl.
• organometallic compounds (metallocenes: M. Thomson et al., WO03088271)
• n-doping For a long time, a major problem with n-doping was the availability of only inorganic materials.
• inorganic materials has the disadvantage that the atoms or molecules used can easily diffuse in the component due to their small size and thus a defined production of e.g. sharp transitions from p-doped to n-doped regions.
• ultraviolet photoelectron spectroscopy is the preferred method (eg, R. Schlaf et al., J. Phys. Chem. B 103, 2984 (1999)).
• IPES inverse photoelectron spectroscopy
• the solid state potentials can be determined by electrochemical Measurements of oxidation potentials E 0x and reduction potentials E red in the solution, for example by cyclic voltammetry (English Cyclic Voltammetry, CV) are estimated (eg JD Anderson, J. Amer.
• the dopant acts as an electron donor and transfers electrons to a matrix, which is characterized by a sufficiently high electron affinity. That is, the matrix is reduced.
• the carrier density of the layer is increased.
• the extent to which an n-dopant is able to deliver electrons to a suitable, electron-affine matrix and thereby increase the charge carrier density and, concomitantly, the electrical conductivity depends in turn on the relative position of the HOMO of the n-dopant and the LUMO of the matrix relative to each other. When the n-dopant's HOMO is above the LUMO of the electron-rich matrix, electron transfer can take place.
• the n-dopant's HOMO When the n-dopant's HOMO is below the LUMO of the electron affinity matrix, electron transfer can also occur, provided that the energy difference between the two orbitals is sufficiently low to allow for a certain thermal population of higher energy orbital. The smaller this energy difference, the higher the conductivity of the resulting layer should be. The highest conductivity is, however, to be expected for the case where the HOMO level of the n-dopant is above the LUMO level of the electron-affine matrix. The conductivity is practically measurable and a measure of how well the electron transfer from the donor to the acceptor works, provided that the charge carrier mobilities of different matrices are comparable.
• the conductivity of a thin-film sample is measured by the 2-point method.
• contacts made of a conductive material are applied to a substrate, e.g. Gold or indium tin oxide.
• the thin film to be examined is applied over a large area to the substrate, so that the contacts are covered by the thin film.
• the current then flowing is measured. From the geometry of the contacts and the layer thickness of the sample results from the thus determined resistance, the conductivity of the thin-film material.
• the 2-point method is permissible if the resistance of the thin film is significantly greater than the resistance of the leads or the contact resistance. Experimentally, this is ensured by a sufficiently high contact distance, and thereby the linearity of the current-voltage characteristic can be checked.
• the temperature stability can be determined by the same method or the same structure by the (undoped or doped) layer heated gradually and after a rest period the conductivity is measured. The maximum temperature that the layer can withstand without losing the desired semiconductor property is then the temperature at immediately before the conductivity breaks down.
• a doped layer may be heated on a substrate with two adjacent electrodes as described above in 1 ° C increments, with 10 seconds left after each step. Then the conductivity is measured. The conductivity changes with the temperature and abruptly breaks down at a certain temperature. The temperature stability therefore indicates the temperature up to which the conductivity does not abruptly break.
• NDOP dopant
• conventional electron transport materials such as Alq 3 (tris (8-hydroxyquinolinato) aluminum) or BPhen (4,7-diphenyl-l, 10-phenanthroline) proposed.
• the gas phase ionization potential of the dopant having the structure Ia is 3.6 eV.
• the corresponding ionization potential of the solid can according to Y. Fu et al. (J. Am. Chem. Soc. 2005, 127, 7227-7234) and is about 2.5 eV.
• BAIq 2 bis (2-methyl-8-quinolinato) -4- (phenylphenolato) aluminum (III)
• BPhen bathophenanthroline
• Alq3 ( Tris (8-hydroxyquinoline) aluminum)
• dopant W (hpp) 4 .
• the object of the present invention is to provide improved matrix materials, in particular electron-transport materials, for organic semiconductor materials which overcome the disadvantages of the prior art.
• the matrix materials should have improved conductivities and improved thermal stability, cause a reduced drive voltage of the matrix material and a lower diffusion of a dopant introduced into the matrix material.
• the thermal stability results in this case For example, from higher glass transition temperatures, higher sublimation temperatures and / or higher decomposition temperatures.
• a pn junction is to be provided, which can be used in electronic, optoelectronic or electroluminescent devices.
• an object of the invention to provide an organic light-emitting diode, an organic thin-film transistor and an organic solar cell, in which a corresponding matrix material can be used.
• the light-emitting diode, the organic thin-film transistor or the organic solar cell should show increased long-term stability and / or improved short-circuit resistance.
• M is selected from Ti, Hf, N R b,% Re, Sn and R Ge,
• each R is independently selected from hydrogen, C 1 -C 20 -alkyl, preferably methyl, C 1 -C 20 -alkenyl, C 1 -C 20 -alkyl, aryl, heteroaryl, oligoaryl, oligoheteroaryl, oligoarylheteroaryl, - OR x , - NR x R y , -SR x , -NO 2 , -CHO, -COOR x , -F, -Cl, -Br, -I, -CN, -NC, -SCN, -OCN, -SOR x , SO 2 R x, wherein R x and R y are selected from C 1 -C 20 -alkyl, C 2 -alkenyl and C 1 -C 20 - alkynyl, or one or more R each ligand can be part of a fused ring system.
• Each ligand may have one or more substituents R.
• the general formula shown above should be understood that each quinoxaline ligand may have one or more substituents R, which are not hydrogen. If, in the case of the compound shown above, all substituents R of a ligand are hydrogen, there are accordingly a total of five substituents for this substituent.
• each quinoxaline ligand has at least one substituent R which is not hydrogen.
• a quinoxaline compound wherein R is selected from aryl, heteroaryl, oligoaryl, oligoheteroaryl and oligoarylheteroaryl, where all sp 2 -hybridized carbon atoms which do not form a ring linkage can be substituted independently of one another by H, methyl, Ci-C 2ö- alkyl, C 1 -C 20 -alkenyl, C 1 -C 20 -alkynyl, -OR x , -NR x R y , -SR x , -NO 2 , -CHO, -COOR x , -F, -Cl , -Br, -I, -CN, -NC, -SCN, -OCN, -SOR x , SO 2 R x , wherein R x and R y are as defined above.
• quinoxaline compounds having the following substitution pattern:
• quinoxaline compound in an organic solar cell as Excitonenblocker or electron transport layer and / or in an organic light emitting diode as an electron transport layer or emitter matrix.
• an organic semiconductor material comprising at least one organic matrix material which is doped with at least one dopant, wherein the matrix material is a quinoxaline compound according to the invention.
• an organic light-emitting diode, an organic thin-film transistor or an organic solar cell which comprises a semiconductor material according to the invention.
• the quinoxaline compound is n-organically doped and is present in a layer structure in which all materials of the layers have a glass transition temperature of greater than or equal to 85 ° C.
• a pn junction wherein the transition on its n-side comprises a quinoxaline compound in an electron transport layer and / or comprises a quinoxaline compound in an intermediate layer between the p-side and the n-side.
• the quinoxaline compounds according to the invention can be used as matrix material, such as electron transport material, which can be doped in particular with metal complex dopants and exhibits improved conductivity.
• the power efficiency of a light-emitting diode according to the invention, a thin-film transistor and a solar cell increases.
• the quinoxaline compounds proposed according to the invention When used as a matrix material, the quinoxaline compounds proposed according to the invention furthermore exhibit improved thermal stability compared to the prior art, a reduced drive voltage and a lower diffusion of the dopant introduced into the matrix material. Furthermore, it was surprisingly found that due to the position of the LUMO at -3.02 eV, a lighter dopability of the matrix material is possible. Further, it has been found that the quinoxaline compounds can be readily prepared based on inexpensive starting materials and can have tunable properties (by selecting the substituents R).
• the n-doped layer comprising a quinoxaline compound according to the invention is present as a transport layer, which can be used by changing the electronic properties as a function of temperature as a current limiting layer and / or as a layer to avoid short circuits to produce electronic, optoelectronic or electroluminescent components , It has been found that the conductivity of such a transport layer decreases compared to the conductivity at room temperature above a critical temperature to a value which is well below the value for the conductivity at room temperature.
• pn junctions are also called charge generation layer or connection unit.
• PN junctions are also called recombination layers in organic solar cells.
• the organic layer arrangement of an OLED or a solar cell comprises a plurality of organic layers arranged one above the other.
• one or more pn junctions may also be provided, as is known for stacked OLEDs (cf., EP 1 478 025 A2, such a pn junction in one embodiment using a p-doped hole transport layer and an n
• a PN junction is an electric charge generating structure in which electric charges are generated when an electric potential is applied, preferably at the boundary between the two layers.
• the pn junction is also used to connect stacked hetero junctions and thus to add the voltage that this component generates (US2006027834A).
• the transitions have the same function as tunnel junctions in stacked inorganic heterojunction solar cells, although the physical mechanisms are not the same.
• the transitions are also used to get an improved injection (extraction on solar cells) to the electrodes (EP1808910).
• document WO 2005/109542 A1 proposes to form a pn junction with a layer of an n-type organic semiconductor material and a layer of a p-type organic material, wherein the layer of n-type organic semiconductor material is in contact with an electrode designed as an anode. In this way, an improved injection of charge carriers in the form of holes is achieved in the layer of the p-type organic semiconductor material.
• a layer of another material may be used as the intermediate layer.
• Such stabilized pn junctions are described, for example, in US2006040132A, where a metal is used as an intermediate layer. OLEDs with this metal layer have a shorter life because of the diffusion of the metal atoms.
• stable interlayers or doped interlayers may be provided between the p-n junctions to produce stable organic semiconductor devices.
• the quinoxaline compounds according to the invention form stable doped layers which are short-circuit resistant. It is preferably provided that doped with organic dopants layers containing quinoxaline compounds of the invention (preferably in a content of more than 55 mol%), these can be used as electron transport layers in organic electronic, optoelectronic and electroluminescent devices, so that these components become unsuitable to short circuits.
• Example A The ligand 5-hydroxyquinoxaline was purchased from 3B Scientific Corporation.
• the conductivity and temperature stability of the Zr-Tetrachinoxalinkomplexes invention was determined according to the methods described in the introduction.
• the complex prepared in the example described above was doped with 10 mole percent of a dopant (Compound Ia).
• the conductivity was 1.9 ⁇ 10 -5 S / cm at room temperature.
• the temperature stability was 121 ° C.
• the drive voltage (at 1,000 cd / m 2 ) was only 2.13 V, while for 4 - (naphthalen-1-yl) -2,7,9-triphenylpyrido [3,2-h] quinazoline a Drive voltage of 2.45 V was determined. At 85 ° C., no diffusion of the dopant was found for the matrix material according to the invention, whereas it was 3 nm when 4- (naphthalen-1-yl) -2,7,9-triphenylpyrido [3,2-h] quinazoline was used.
• the ligand phenazin-1-ol was purchased commercially from VWR.
• the ligand 2,3-dimethylquinoxaline-5-ol was purchased commercially from Hangzhou Chempro.
• Figure 1 is a sectional view through a typical OLED structure
• Figure 2 shows a section through a typical organic solar cell
• Figure 3 shows the dependence of the luminance on the operating voltage of two OLEDs
• Figure 4 shows the operating voltage at 1000 cd / m 2 as a function of the storage time at 85 0 C;
• Figure 5 shows a graph of current density versus voltage
• Figure 6 shows a graph of voltage versus time.
• the compounds proposed according to the invention are particularly suitable for the production of efficient OLEDs.
• FIG. 1 shows a typical layer structure of an OLED in cross-section.
• the layers are thereby formed on a substrate 10 in the following order: anode 11, p-doped hole transport layer 12, electron blocker 13, emission layer 14, hole blocker 15, n-doped electron transport layer 16 and cathode 17.
• Two or more layers may be combined, as far as Combined properties are available.
• the person skilled in the art is also familiar with an inverted layer structure, top-emitting OLEDs, transparent OLEDs and stacked OLEDs.
• the emitter layer usually consists of an emitter matrix and an emitter dye (emitterdotand); but this emitter layer can also be a combination of several layers and different materials.
• the compounds according to the invention are particularly suitable for the production of organic solar cells.
• FIG. 2 shows a typical layer structure of an organic solar cell in cross section.
• the layers are constructed in the following order: anode 21, p-doped hole transport layer 22, non-doped hole transport layer 23, which is also photo- may be active, photoactive layer 24, electron transport layer 25, which may also be photoactive, n-doped electron transport layer 26 and cathode 27.
• Further layer structures for organic solar cells are also known to a person skilled in the art. For example, instead of the n-doped electron transport layer 26, a thin buffer layer could be used. Two or more layers can be combined as soon as combined properties are present.
• An OLED was prepared using the zirconium tetrachinoxaline complex of Example A.
• a glass substrate coated with ITO (Indium Tin Oxide) (ITO layer thickness 90 nm) was cleaned with ethanol, acetone and isopropanol for 5 minutes each in an ultrasonic bath. Subsequently, the substrate was cleaned for 5 minutes in ozone plasma and then transferred to vacuum. Under high vacuum, the organic layers and the electrode were vapor-deposited on the substrate, with the aid of a shadow mask, so that the ITO surface was kept free for later electrical contacting.
• ITO Indium Tin Oxide
• a p-doped hole transport layer was vapor-deposited on the ITO layer (60 nm NPD-N, N'-diphenyl-N 5 N'-bis (1-naphthyl) -1,1'-biphenyl-4,4 "-diamine doped with 4,4 ', 4 "- (IE, l'E, l'E) -cyclopropane-1,2,3-triylidenetris (cyanomethan-1-yl-1-ylidene) tris (2,3,5
• a 10 nm NPD layer was vapor-deposited, followed by a 20 nm thick rubrene emitter layer doped with a commercial red dye (10% by mass).
• An organic light-emitting diode was prepared as in Example 1 above except that the zirconium tetrachinoxaline complex was replaced by 4- (naphthalen-1-yl) -2,7,9-triphenylpyrido [3,2-h] quinazoline. This example resulted in an operating voltage of 2.45 V at 1000 cd / m 2 .
• FIG. 3 shows the luminance of the two produced OLEDs as a function of the operating voltage.
• the open circles are the data for an OLED measured with the prior art compound, while the closed circles refer to an OLED made with the compound of the invention.
• FIG. 4 shows the operating voltage at 1000 cd / m 2 as a function of the storage time at 85 ° C.
• the OLED with the prior art compound is represented by the open circle curve and compared to the OLED using the compounds of the invention (closed loop curve). Apart from the low operating voltage of about 2.15 V, the OLED according to the invention has a high thermal stability, and after 1000 hours the operating voltage has barely changed. At the same time, the operating voltage of the prior art OLED has increased from about 2.4V to 2.7V.
• Example 3 Organic solar cell with zirconium tetrachinoxaline complex A conventional CuPc-C ⁇ O bulk heterojunction solar cell was prepared as follows: an OLED was prepared with the zirconium tetrachinoxaline complex described above according to Example A.
• a glass substrate coated with ITO (ITO layer thickness of 90 nm) was treated with ethanol, acetone, and The substrate was cleaned for 5 minutes in ozone plasmas and then placed in a vacuum Under high vacuum (pressure less than 10 -3 Pa), the layers were applied by thermal vacuum evaporation in the following order: 10 nm thick CuPc doped with F4-TCNQ (5 mass%); 10 nm thick undoped CuPc (cupfer phthalocyanine); 30 nm thick 1: 2 (mass) mixture of CuPc in C60; 40 nm thick undoped C60 layer; 10 nm thick layer of zirconium tetrachinoxaline complex; 100 nm thick aluminum cathode.
• the pressure in the evaporation chamber for the aluminum evaporation was slightly higher than for the evaporation of the organic layers, but still lower than 10 "2 Pa.
• An organic solar cell was prepared as described in Example 3 except that a 10 nm thick bathocuproine (BCP) layer was used in place of the zirconium tetrachinoxaline complex.
• BCP bathocuproine
• the photoelectric properties under an AM 1.5 (air mass 1.5) simulated solar spectrum of both organic solar cells are very similar.
• a device with a stable pn junction is fabricated on an ITO anode as follows:
• the result is a blue stacked PIN OLED 3 which uses molecular dopants in the doped transport layers, with layers (f) and (g) corresponding to the doped pn junction.
• This device produces a luminous intensity of 1000 cd / m 2 at 8.9 V with a current efficiency of 10.8 cd / A.
• a device to test a stable pn junction was fabricated on an ITO anode as follows:
• FIG. 5 shows the characteristic (current density vs. voltage) of this structure.
• P stands for a p-doping with 4,4 ', 4 "-cyclopropane-1,2,3-triylidenetris (cyano-methan-1-yl-1-ylidene) tris (2,3,5, 6-tetrafluorobenzonitrile), 3 mol%.
• Fig. 6 shows the voltage across the pn junctions.
• the pn junctions are each operated at 40 mA / cm 2 and are polarized in such a way that the charge carriers are generated in the pn junction.
• the results show that the pn junctions with Example A, with and without intermediate layer, have a lower voltage and are significantly more stable than with Alq3. Curves 6.3 and 6.4 show almost no changes over the entire measurement time of nearly 700 hours.
• Example 1 was repeated with the compound of Example C (instead of Example A), resulting in a drive voltage of 2.10 V at 1000 cd / m 2 .
• Example 5 was repeated with the compound of Example C (instead of Example A), resulting in a luminous intensity of 1000 cd / m 2 at 8.8 V.
• Example 5 was repeated with the compound of Example B (instead of Example A), resulting in a luminous intensity of 1000 cd / m 2 at 9.5 V.
• Example 1 Ten, 50 mm x 50 mm OLEDs were prepared according to Example 1. As a control, another ten, 50 mm x 50 mm OLEDs were prepared according to Example 1, wherein the Zr quinoxaline was replaced by 2,4,7,9-tetraphenyl-l, 10-phenanthroline.
• the samples were aged for 500 hours at 4000 cd / m 2 . After only 100 hours, 3 of the control OLEDs had small, visible, defects. After 500 hours, 5 of the troll OLEDs defects that had spread far beyond the OLED surface, with 2 total failures. The samples with the Zr-quinoxaline compound showed no defects even after 500 hours.

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