WO2010105615A1 - Organische zenerdiode, elektronische schaltung und verfahren zum betreiben einer organischen zenerdiode - Google Patents
Organische zenerdiode, elektronische schaltung und verfahren zum betreiben einer organischen zenerdiode Download PDFInfo
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- WO2010105615A1 WO2010105615A1 PCT/DE2010/000332 DE2010000332W WO2010105615A1 WO 2010105615 A1 WO2010105615 A1 WO 2010105615A1 DE 2010000332 W DE2010000332 W DE 2010000332W WO 2010105615 A1 WO2010105615 A1 WO 2010105615A1
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- organic
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- zener diode
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/20—Organic diodes
- H10K10/26—Diodes comprising organic-organic junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/30—Doping active layers, e.g. electron transporting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/30—Coordination compounds
- H10K85/321—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
- H10K85/324—Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3] comprising aluminium, e.g. Alq3
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/649—Aromatic compounds comprising a hetero atom
- H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
- H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Definitions
- the invention relates to an organic zener diode, an electronic circuit and a method of operating an organic zener diode.
- Passive storage concepts have the advantage of a relatively simple design and the possibility of easy integration into 3D concepts.
- Resistive memory concepts that is, memories that can accept different electrical resistances and thus store information content, are considered to be promising for future mass storage due to their scalability down to molecular size.
- a simple design in crossbar technology allows cost-effective production and 3 D integration of these components.
- a disadvantage of this structure is the crosstalk on neighboring cells when programming or deleting individual elements. To prevent this and allow larger memory arrays, additional active and passive components are needed.
- Zener diodes behave in the forward direction as normal diodes, in the reverse direction, they suddenly from a certain voltage, the breakdown voltage, low impedance.
- the breakdown voltage can be set by selectively changing the doping of the electron-conducting layer or the hole-conducting layer and the resulting change in the barrier layer width of 3 to 100V.
- Zener diodes are currently also used in passive matrix memories. Since these crossbar memories are theoretically scalable down to molecular size, silicon technology will soon reach its limits.
- organic electronics As an alternative to silicon-based electronics, organic electronics has proven promising. Advantages here are the comparatively simple processes such as printing or vapor deposition at low temperatures, the ability to work on flexible substrates, as well as the wide variety of molecular materials.
- OLED organic light emitting diodes
- Another problem with this design is poor electrical contact properties between the electrodes and the organic material.
- the injection of charge carriers is hindered by large barriers for electrons as well as holes at the respective interfaces between the organic layers and metal contacts.
- the object of the invention is to provide an improved zener diode with a simple structure and improved behavior in connection with the breakdown voltage.
- the Zener diode should also show stable and reproducible behavior, and the breakdown voltage should be able to be adjusted without changing the forward characteristic.
- the backward breakdown voltage of the organic Zener diode is easily adjustable by changing the thickness of the intermediate layer.
- the backward breakdown voltage may be additionally or alternatively adjusted by altering the doping concentration of the hole-conducting charge carrier transport layer and / or the doping concentration of the electron-conducting charge carrier transport layer.
- the adjustment of the reverse breakdown voltage has no influence on the forward behavior of the diode.
- an advantageous possibility is created to produce organic zener diodes with different breakdown voltages in a simple and reproducible manner.
- the invention enables a controlled, stable and reproducible breakdown behavior in the forward as well as in the backward direction.
- the charge carrier injection layer and the intermediate layer may comprise inorganic materials.
- a preferred embodiment of the invention provides that the n-dopant and / or the p-dopant is a molecular dopant. Due to the relatively high current densities in the operating range of the organic zener diodes, a diffusion of doping ions or doping molecules is to be expected. Due to their size, the diffusion probability of molecular dopants is many times lower than the diffusion of ions. As a result, the device can be operated at much higher current densities and thus also at higher temperatures.
- Doping with organic materials allows the use of "high gap” materials, and by using these materials with a large energy gap, it is possible to produce transparent components that have the great advantage that visible light is neither absorbed nor emitted Components, for example, in direct combination with OLED displays possible.
- Organic dopants for example, are described, for example, in document EP 1 988 587.
- dopants are used according to the local examples 1 to 9.
- Further preferred p-dopants are described in document US 2005/0139810.
- Preferred n-dopants are also disclosed in documents US 2005/0061231, WO 2005/086251 and EP 1 837 926, EP 1 837 927.
- Preferred hole transport materials HTM semiconductors which can be p-doped and transport holes
- HTM semiconductors which can be p-doped and transport holes
- ETMs that can be n-doped and transport electrons
- Preferred electron transport materials are, for example, BPhen, BCP or other phenanthroline derivatives, Alq3, C60, PTCBI, PTCDI, TCNQ, PBD, OXD, TAZ, TPOB, BAIq.
- the electrically non-doped, organic intermediate layer has unipolar charge carrier transport properties, so that the mobility for charge carriers in the form of electrons and the mobility for charge carriers in the form of holes are different. It is preferred if
- An advantageous embodiment of the invention provides that the electrically non-doped, organic intermediate layer ambipolar charge carrier transport properties, so that the mobility for charge carriers in the form of electrons and the mobility for Charge carriers in the form of holes are substantially equal.
- the intermediate layer should preferably consist of an ambipolar material. This ensures that both electrons and holes are involved in the charge transport in the forward direction and thus relatively high currents are already achieved at low voltages.
- the electrically non-doped organic intermediate layer contains or consists of exactly one organic material.
- the electrically non-doped organic intermediate layer contains or consists of a mixture of a plurality of organic materials.
- the electrode-side, electrically n-doped charge carrier injection layer contains the organic matrix material and the organic n-dopant in a ratio of at least 1 mol% dopant to matrix material and the counterelectrode, electrically p-doped charge carrier injection layer contains the organic matrix material and the organic p Containing dopants in the ratio of at least lmol% dopant to matrix material.
- the ratio is at least 2 mol%. More preferred is a doping concentration of the doped layers of at least 4 mol%.
- a preferred embodiment of the invention provides that the electrode-side and the counter-electrode-side charge carrier injection layer are each electrically doped by means of metal ions.
- the organic matrix material and the further organic matrix material are identical and that the electrically non-doped, organic intermediate layer contains the same organic matrix material.
- the material for the injection layers is used as matrix material and in each case n- or p-doped. In the intermediate layer, this material is used undoped in its intrinsic form. Such a combination is called "homojunction".
- An advantageous embodiment of the invention provides that electrically non-doped, organic intermediate layer is formed with a layer thickness between about 1 Angstrom and about 100nm, preferably between about lnm and about lOnm.
- a development of the invention provides that at least one of the following layers contains at least one inorganic material: the electrode-side, electrically n-doped charge carrier injection layer, the counterelectrode-side, electrically p-doped charge carrier injection layer and the electrically non-doped, organic intermediate layer.
- At least one of the organic layers namely the electrode-side, electrically n-doped charge carrier injection layer, the counterelectrode-side, electrically p-doped charge carrier injection layer and the electrically non-doped organic intermediate layer, at least one organic material selected from of the following group of organic materials: oligomer material and polymer material.
- a small energy barrier is preferably less than 0.5eV, more preferably OeV.
- the energy barrier is seen as a barrier to carrier injection from the charge carrier injection layer into the interface layer when the device is used in normal diode operation.
- the low barrier is preferred in order to obtain the lowest possible threshold voltages and steep characteristic curves.
- Active layers are here the layers which are arranged between the two electrodes. These may include organic materials; In particular small molecules, which are also referred to as "small molecules" in the technical field of organic semiconductors.
- the active layers can also comprise oligomers.
- the active layers can also comprise polymers.
- the layers namely the electrodes, the injection layers, the semiconductor layers and / or the intermediate layers, are preferably produced by one of the following methods:
- the organic layers are vaporized mainly by thermal evaporation or PVD (Physical Vapor Deposition).
- PVD Physical Vapor Deposition
- the inorganic layers can be deposited by means of thermal evaporation, sputtering, laser ablation, Spray Pirolysys, CVD (Chemical Vapor Deposition) and other methods. These methods do not necessarily take place in a vacuum, but can also be carried out under protective gas.
- Wet-chemical processes or deposition from solution include processes such as spin-coating, blade-gap coating, stamping, printing (ink-jet) or the like.
- Deposition of the layers is always on a substrate or on previous layers formed on the substrate.
- the substrate may also perform other than just the carrier function.
- the substrate may be conductive and also form the electrode of the diode.
- An operation of an organic diode in reverse with current breakdown may be provided so that current substantially flows through the diode, the diode between two conductive electrical contacts comprising the following layers: an electrically n-doped organic semiconductor layer, an electrically undoped organic semiconductor layer and an electrically p-doped organic semiconductor layer.
- an operation of an organic diode in the reverse direction under current breakdown may be provided so that current substantially flows through the diode, wherein the diode between two conductive electrical contacts (electrodes) comprises layers according to the following order: an electrically n-doped organic semiconductor layer , an electrically undoped organic semiconductor layer and an electrically p-doped organic semiconductor layer.
- an organic semiconductor component in particular an organic zener diode, having an electrode and a counterelectrode and an organic layer arrangement formed between the electrode and the counterelectrode and in electrical contact therewith
- the organic layer arrangement comprises the following organic layers: an electrode-side charge carrier injection layer and a counterelectrode-side charge carrier injection layer and an intermediate layer region arranged therebetween
- a protective state for subsequent components is achieved by means of applying an electrical voltage which is greater than the breakdown voltage, the voltage is limited to the breakdown voltage value and by the applied voltage is derived current flow through the organic zener diode.
- the organic zener diode is preferably used in combination with a memory element.
- the invention further includes the idea of an organic electronic semiconductor device having an electrode and a counterelectrode and an organic layer arrangement formed between the electrode and the counterelectrode and in electrical contact therewith.
- the organic layer arrangement comprises the following organic layers: an electrode-side charge carrier injection layer and a counterelectrode-side charge carrier injection layer and a layer region arranged therebetween with an intermediate layer.
- the electrode and the counter electrode are preferably made of a highly conductive material, for example a metal.
- Non-metallic electrode materials can also be used, provided that they have a certain electrical conductivity.
- Such non-metallic electrode materials include, for example, highly conductive oxides, SnO, In: SnO (ITO), F: SnO, ZnO, highly doped inorganic and organic semiconductors such as a-Si, c-Si or the like, nitrides, and polymers ,
- the intermediate layer consists of a mixed layer of two different organic materials, wherein one material preferably conducts electrons and the other material preferably passes holes.
- one material preferably conducts electrons and the other material preferably passes holes.
- the electrode-side and counterelectrode-side charge carrier transport layer serve to effectively inject charge carriers in the form of electrons or holes (holes) into the organic layer arrangement and to transport them there without significant electrical losses.
- n-dopant refers to molecules or neutral radicals having a HOMO (Highest Occupied Molecular Orbital) level of less than 4.5eV, preferably less than about 2.8eV, and more preferably less than about
- the HOMO level of the doping material can be determined from cyclovoltammetric measurements of the oxidation potential, or alternatively the reduction potential of the donor cation in a salt of the donor can be determined.
- Ferrocenium redox couple is less than or equal to about -1.5V, preferably less than or equal to about -2.0V, and more preferably less than or equal to about -2.2 V.
- the molar mass of the n-type dopant is preferably between about 100 and about 2000 g / mol and more preferably between about 200 and 1000 g / mol.
- a molar doping concentration for the electrical n-doping is in a preferred embodiment between 1: 1000 (acceptor molecule: matrix molecule) and 1: 2, preferably between 1: 100 and 1: 5, and more preferably between 1: 100 and 1:10.
- the donor first forms from a precursor during the production of the organic layers or a subsequent layer production process, as described in the document DE 103 07 125 as such.
- the values given above for the HOMO level of the donor then refer to the resulting species.
- the doping of the organic material may be made in other ways. These include, for example, a co-evaporation of the organic material with a metal of low work function. For example, lithium and cesium are suitable for n-type doping.
- molecules or neutral radicals are usually referred to, in which the LUMO level (LUMO - "Lowest Unoccupied Molecular Orbital") energetically lower than 4.5eV, preferably lower than 4.8eV and more preferably lower than 5.04eV
- the LUMO level of the acceptor for p-type doping can be determined by cyclovoltammetric measurements of the reduction potential
- the acceptor preferably has a reduction potential towards Fc / Fc + of at least -0.3V, more preferably of at least 0.0V and more preferably of At least about 0.24 V.
- acceptors with a molar mass of about 100 to 2000 g / mol, preferably with a molar mass of between about 200 and 1000 g / mol and more preferably with a molar mass of between about 300 g / mol. mol and 2000 g / mol.
- the molar doping concentration for the p-doping is in an advantageous embodiment between 1: 1000 (acceptor molecule: matrix molecule) and 1: 2, preferably between 1: 100 and 1: 5, and more preferably between 1: 100 and 1:10.
- the acceptor may first form from a precursor during the layer manufacturing process or the subsequent layer manufacturing process. The above LUMO level of the acceptor then refers to the resulting species.
- V 2 O 2 vanadium pentoxide
- MO 2 O 3 molybdenum oxide
- An embodiment provides that the zener diode is used in an electronic circuit to generate a voltage reference.
- a further embodiment provides that the zener diode is used in combination with other organic or inorganic components.
- 1 is a schematic representation of a layer sequence for an organic zener diode
- FIG. 3 shows a schematic representation of a layer sequence for an organic Zener diode from FIG. 2 with a variable transport layer
- FIG. 6 shows current-voltage curves for organic zener diodes according to FIG. 1 with different intermediate layer thicknesses from TCTA: TPBI in the ratio 1: 1, FIG.
- FIG. 7 shows a current-voltage curve for organic zener diodes according to FIG. 1 with a 5 nm thick intermediate layer of Balq: NPB in the ratio 1: 1,
- FIG. 8 shows a current-voltage curve for organic zener diodes according to FIG. 1 with a 5 nm thick intrinsic intermediate layer of the same material which is used as matrix for the charge carrier injection layers, FIG.
- FIG. 9 shows a current-voltage curve for organic zener diodes with the structure according to FIG. 1 with a 7 nm thick intrinsic intermediate layer of the same material, which is used as matrix for the charge carrier injection layers, for different doping concentrations of the hole-conducting injection layer, FIG.
- FIG. 10 shows a current-voltage curve for organic zener diodes with the structure according to FIG. 1 with a 7 nm thick intrinsic intermediate layer of the same material, which is used as matrix for the charge carrier injection layers, for different doping concentrations of the electron-conducting injection layer, FIG.
- FIG. 11 is a current-voltage curve for organic zener diodes with the structure of FIG. 1 with a 30 nm thick intrinsic intermediate layer of a single molecule for the ambipolar, low-gap material Pentacen and
- FIG. 12 shows current-voltage curves for organic zener diodes with the structure according to FIG. 1 with an 8 nm thick intrinsic intermediate layer of the unipolar materials BaIq and NPB.
- Fig. 1 shows a schematic representation of a layer sequence for an organic electronic zener diode. Between an electrode 1 and a counter electrode 2, an electron-side charge carrier injection layer 3, a charge carrier injection layer 4 on the side of the counter electrode and an intermediate layer 5 arranged between them are arranged.
- Fig. 2 shows a schematic representation of a current-voltage characteristic of an ideal Zener diode with the characteristic voltages UJ as forward forward voltage and U as a breakdown voltage.
- FIG. 3 shows a schematic representation of a layer sequence for an organic electronic zener diode. Between an electrode 21 and a counterelectrode 25, an electrode-side charge carrier injection layer 22, a charge carrier injection layer 24 on the opposite electrode side, and a transport layer 23 arranged therebetween are arranged. The intermediate layer is thereby varied in its thickness (x).
- All layers are produced in a vacuum evaporation process.
- such layers can also be produced by means of other methods, such as, for example, spin coating, knife coating, organic vapor phase deposition, or self-assembly
- the intermediate layer is formed with a mixed layer of n-type and p-type organic material, and the mixing ratio in the embodiment is 1: 1.
- FIG. 4 shows a current-voltage curve for an organic electronic component according to FIG. 3.
- the thickness x of the transport layer is 5 nm.
- the result is a typical diode behavior when applying a positive voltage to the anode (forward direction).
- a negative voltage is applied to the anode (reverse direction)
- the current increases significantly from the voltage Uz.
- the breakdown voltage is usually measured at a reference current of about 1 to 5% of the maximum allowable reverse current.
- zener diodes An important parameter of zener diodes is the differential resistance in the breakdown region. The smaller this resistance, the steeper the characteristic in the breakdown region of the Zener diode. One consequence of this is better voltage stabilization.
- This differential resistance in the reverse direction can be reduced by a higher molecular ratio of dopant to matrix. If a higher doping is selected, more free charge carriers are available for current transport, thereby increasing the conductivity. This is particularly noticeable in the backward direction since in the forward direction from a certain doping no longer the conductivity but the barriers at the interfaces limit the current.
- the illustrated components and in particular the doping ratio of the injection layers can thus be further optimized and adapted to the respective requirements.
- the area of the components can be reduced. Capacitive effects should be reduced as a result.
- Another way to reduce the differential resistance and thus improve the properties is the replacement of ITO with, for example, gold as the anode material.
- ITO has a relatively high transverse resistance, which is also included in the differential resistance, since it is connected in series with the actually active layers. If this resistance is reduced, the differential resistance of the entire component decreases.
- the anode-side hole transport layer 22 is 2,2 ', 7,7'-tetrakis (N, N-di-p-methylphenylamino) -9,9'-spirobifluorene.
- the molecular dopant used is 2,2 '- (perfluoronaphthalene-2,6-diylidene) -dimalodinitrile.
- 2,2 ', 7,7'-tetrakis (N, N-di-p-methylphenylamino) -9,9'-spirobifluorene and 2,2' - (perfluoronaphthalene-2,6-diylidene ) -dimalodinitrile can also be used F4-TCNQ.
- Interlayer mixed layer 10 nm TCTA: TPBi (24.2)
- Electron injection layer 50 nm BPhen doped with cesium
- FIG. 5 shows a current-voltage curve for an organic electronic component according to FIGS. 1 and 3.
- the thickness x of the transport layer here amounts to 10 nm. In the forward direction, the typical diode behavior results. In contrast to the exemplary embodiment with a 5 nm intermediate layer, a backward characteristic shifted significantly to greater negative voltages results.
- FIG. 6 shows several current-voltage curves for organic zener diodes according to FIGS. 1 and 3.
- the thickness x of the intermediate layer is varied between 5 nm and 8 nm.
- the breakdown voltage is shifted by 3 V.
- FIG. 7 shows a current-voltage curve for an organic electronic component according to FIG. 1.
- the thickness x of the transport layer here amounts to 5 nm.
- the typical diode behavior results.
- an exponential increase in the current at a certain Uz can be observed.
- This embodiment relates to an organic Zener diode, which differs from the preceding embodiments in that the cathode-side injection layer is made of an n-doped material, the intermediate layer of the same material in intrinsic form, and the anode-side injection layer of this material with a p-type doping , Fig. 8 shows a current-voltage characteristic for this embodiment. In this example too, the backward characteristic can be shifted by varying the intrinsic interlayer thickness.
- Fig. 9 shows the current-voltage characteristic of a device to the fourth embodiment with an intrinsic layer thickness of 7nm. Shown are the characteristics for different dopings of the hole-conducting injection layer.
- Fig. 10 shows the current-voltage characteristic of a device to the fourth embodiment with an intrinsic layer thickness of 7nm. Shown are the characteristics for different dopings of the electron-conducting injection layer.
- a fifth exemplary embodiment of an organic zener diode according to FIG. 1 the following structure is provided:
- This embodiment relates to an organic zener diode, which differs from the preceding embodiments in that the anode-side injection layer consists of a p-doped organic low-gap material.
- the intermediate layer consists of the same material, but is intrinsically present in the intermediate layer.
- the cathode-side charge carrier injection layer consists of an organic high-gap material doped with metal ions. In this example too, the backward characteristic can be shifted by varying the intrinsic intermediate layer and by varying the doping of the injection layers.
- Fig. 11 shows the current-voltage characteristic of a device to the fifth embodiment with an intrinsic layer thickness of 30nm. Shown are the characteristics for a 30 nm thick intrinsic pentacene layer of intermediate layer.
- This exemplary embodiment relates to an organic Zener diode, which differs from the preceding exemplary embodiments in that the intrinsic organic intermediate layer consists only of a unipolar material. In this example too, the backward characteristic can be shifted by varying the intrinsic intermediate layer and by varying the doping of the injection layers.
- Fig. 12 shows the current-voltage characteristic of a device to the sixth embodiment with an intrinsic layer thickness of 8nm. Shown are the characteristic curves for an intermediate layer thickness of 8 nm for the electron-conducting material BaIq and the hole-conducting material NPB.
- Carrier Injection Layer or Injection Layer Only A layer by which majority carriers are transferred from one side-by-side layer to another side-to-side layer.
- the energy barrier relates to a barrier for carrier injection from the charge injection layer into the interlayer when the device is used in normal diode operation (forward direction).
- oligomer is a molecule composed of several identical or similar units. Oligomers include dimers, trimers and larger molecules of up to 30 units. Molecules composed of more than 30 equal or similar units are referred to as polymers.
- the current breakdown of a diode in the reverse direction is due to the negative voltage Area defined by the current flowing substantially through the diode, which is in Fig. 4, the range of about -2.5 V to more negative voltages. This is also called zener behavior.
- HTM semiconductor material which transports holes, also called hole conductors, and can be p-doped
- ETM semiconductor material which transports electrons, also called electron conductors, and can be n-doped
- Bphen 4,7-diphenyl-1,10-phenanthroline BCP 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (commonly used as ETM),
- PTCBI 4,9,10-perylenetetracarboxylic acid bis-benzimidazole
- F4-TCNQ 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (strong organic acceptor, commonly used to dope HTM),
- TPOB I 3,5-tris (4-tert-butylphenyl-l, 3,4-oxadiazolyl) -benzene
- NPB N N'-bis (naphthalen-1-yl) -N, N'-bis (phenyl) -benzidine,
- MeO-TPD N, N, N ', N'-tetrakis (4-methoxyphenyl) benzidine
- Matrix molecule Matrix material, matrix molecule that forms a layer in which the dopant molecules are embedded.
- Precursor precursor substance / substance which is converted into an active molecule only by modification is converted into an active molecule only by modification.
- High-gap material Is material with an optical band gap that is so large that the material is essentially transparent, typically the bandgap is greater than 2 eV.
- Low gap material has an optical bandgap that is so large that the material is essentially non-transparent for layers of sufficient thickness. Typically, the bandgap is less than or equal to 2 eV.
- Homojunction transition typically a pn junction, where both sides (p and n) are formed essentially from the same transport material.
- Zener diode diode having a relatively low reverse breakdown voltage and a steep characteristic in the forward direction. These behave in the forward direction as normal diodes, in the reverse direction, they are from a certain voltage, the so-called reverse voltage or breakdown voltage, suddenly low.
- Injection layer for holes Layer which has in an electronic device under tension in the forward direction, holes as a majority carrier and injected them into another layer.
- Injection layer for electron layer which is placed in an electronic device
- Organic vapor phase deposition organic vapor deposition
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JP2012500067A JP5773977B2 (ja) | 2009-03-20 | 2010-03-19 | 有機ツェナーダイオード、電子回路、および、有機ツェナーダイオードを動作させる方法 |
KR1020117024831A KR20140014356A (ko) | 2009-03-20 | 2010-03-19 | 유기 제너 다이오드 전자 회로 및 유기 제너 다이오드를 작동시키기 위한 방법 |
CN201080012966.7A CN102388475B (zh) | 2009-03-20 | 2010-03-19 | 有机齐纳二极管、电子电路以及用于运行有机齐纳二极管的方法 |
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US20140340128A1 (en) | 2014-11-20 |
JP2012521076A (ja) | 2012-09-10 |
US20120075013A1 (en) | 2012-03-29 |
KR20140014356A (ko) | 2014-02-06 |
WO2010105615A8 (de) | 2011-12-08 |
DE102009013685B4 (de) | 2013-01-31 |
TWI550927B (zh) | 2016-09-21 |
CN102388475A (zh) | 2012-03-21 |
US9306182B2 (en) | 2016-04-05 |
JP5773977B2 (ja) | 2015-09-02 |
TW201041202A (en) | 2010-11-16 |
DE102009013685A1 (de) | 2010-09-23 |
CN102388475B (zh) | 2016-06-29 |
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