WO2010055970A1 - 접착제의 발열 온도 조절을 통한 전자부품간 접속 방법 및 접착제의 발열 온도 조절을 통한 전자부품간 접속 장치 - Google Patents
접착제의 발열 온도 조절을 통한 전자부품간 접속 방법 및 접착제의 발열 온도 조절을 통한 전자부품간 접속 장치 Download PDFInfo
- Publication number
- WO2010055970A1 WO2010055970A1 PCT/KR2009/000056 KR2009000056W WO2010055970A1 WO 2010055970 A1 WO2010055970 A1 WO 2010055970A1 KR 2009000056 W KR2009000056 W KR 2009000056W WO 2010055970 A1 WO2010055970 A1 WO 2010055970A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- adhesive
- electronic component
- conductive adhesive
- connection
- ultrasonic
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/321—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83194—Lateral distribution of the layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/0285—Using ultrasound, e.g. for cleaning, soldering or wet treatment
Definitions
- the present invention relates to a connection method between electronic components, and more particularly, by adjusting a strain generated in the adhesive when pressure and vibration are applied to the adhesive for connection between the electronic components by a horn.
- the present invention relates to a connection method between electronic components for easily adjusting the self-heating temperature of an adhesive, and a connection device between electronic components for carrying out the method.
- a conductive or nonconductive adhesive is disposed between the connection electrode formed on one electronic component and the connection electrode formed on the other electronic component.
- a method of electrically connecting the one electronic component and the other electronic component by using a thermocompression head to compress and heat the conductive or non-conductive adhesive positioned therebetween and then harden them.
- the thermocompression head is maintained at about 250 ° C. to 300 ° C. to electrically connect the one electronic part and the other electronic part using conventional techniques.
- the heat transfer is performed to the anisotropic conductive film (ACF) to maintain the minimum temperature necessary for curing the anisotropic conductive film (ACF) for a predetermined time.
- thermocompression head must be prevented from being transferred to an up-and-down conveying device for fixing and vertically transferring the thermocompression head in addition to the anisotropic conductive film (ACF).
- ACF anisotropic conductive film
- the prior art increases the temperature of the anisotropic conductive film (ACF) by performing heat transfer from the thermocompression head to the anisotropic conductive film (ACF) to increase the temperature of the anisotropic conductive film (ACF) to a predetermined temperature or more. There was a limit.
- the prior art has a problem that takes a long time to preheat the thermocompression head in advance in order to raise the thermocompression head to 250 °C ⁇ 300 °C.
- thermocompression head in order to change the temperature of the anisotropic conductive film (ACF) during thermocompression, it is difficult to change the temperature of the anisotropic conductive film (ACF) during thermocompression, In addition, there was a problem that takes a long time to change the temperature.
- the present invention is to solve the above problems and to place a conductive or non-conductive adhesive between the connection electrode formed on one electronic component and the connection electrode formed on the other electronic component, the pressure and ultrasonic vibration applied between the
- the present invention provides a method of electrically connecting one electronic component and another electronic component by pressing and heating a conductive or non-conductive adhesive and then curing the conductive or non-conductive adhesive.
- the present invention by adjusting the strain (strain) of the conductive or non-conductive adhesive generated when the pressure and the ultrasonic vibration is applied, while easily controlling the exothermic temperature which is the temperature of the self-heating of the conductive or non-conductive adhesive
- An object of the present invention is to provide a method of electrically connecting an electronic component with the other electronic component.
- the present invention provides an alignment step of aligning a connection electrode of a second electronic component on an upper side of a connection electrode of a first electronic component with a conductive adhesive or a non-conductive adhesive interposed therebetween; By applying pressure and ultrasonic vibration to the conductive adhesive or non-conductive adhesive through a connecting electrode of the second electronic component by a horn, the conductive adhesive or the non-conductive adhesive is self-heated, and then cured. And an ultrasonic connection step of interconnecting the connection electrode of the second electronic component and the connection electrode of the second electronic component, wherein the ultrasonic connection step includes adjusting the strain of the adhesive generated when the pressure and the ultrasonic vibration are applied.
- the present invention relates to a method for connecting electronic components through controlling the exothermic temperature of an adhesive, wherein the exothermic temperature is a temperature at the time of self-heating.
- the strain (strain) of the adhesive can be adjusted by controlling both the power (power) required for the ultrasonic vibration and the pressure, the power and the pressure required for the ultrasonic vibration is a controller Can be controlled by
- the strain of the adhesive can be adjusted by controlling the amplitude of the ultrasonic vibration, the amplitude of the ultrasonic vibration can be controlled by the controller.
- the ultrasonic vibration may be a longitudinal vibration perpendicular to the connection electrode of the first electronic component, the connection electrode of the second electronic component, and the adhesive.
- the conductive adhesive may be an isotropic conductive adhesive or an anisotropic conductive adhesive
- the anisotropic conductive adhesive may be an anisotropic conductive film or an anisotropic conductive paste
- the non-conductive adhesive may be a non-conductive film or non-conductive paste.
- the first electronic component and the second electronic component may each be any one of a semiconductor chip, a flexible substrate, a rigid substrate, a PET film, and a glass substrate.
- the present invention provides a connection device between electronic components for performing any one of the connection method between the electronic components, a converter for generating the ultrasonic vibration; A booster having an upper side connected to the converter to transmit and amplify the ultrasonic vibration generated by the converter; A horn connected to the lower side of the booster to transmit the ultrasonic vibration to the conductive adhesive or the non-conductive adhesive disposed between the connecting electrode of the first electronic component and the connecting electrode of the second electronic component; Shanghai conveying means made of any one of a hydraulic cylinder, a pneumatic cylinder and a motor as a means for moving the converter, booster and horn up and down integrally; A load cell for measuring a pressure applied to the connecting electrode of the first electronic component, the connecting electrode of the second electronic component, and the conductive adhesive or the non-conductive adhesive by the vibration generating surface of the horn; A controller connected to the converter to control the amplitude of the ultrasonic waves generated from the converter or to control the power supplied to the converter to generate the ultrasonic waves and the pressure applied to
- the adhesive for connecting electronic components can be maintained at a desired temperature within a short time, and thus a large power is not required since no preheating is required.
- the present invention uses the self-heating system by the ultrasonic vibration as described above as a basic principle, it does not require a preheating time to raise the adhesive to a desired temperature, and thus, it takes a short time to connect the connection electrode between electronic components. .
- the present invention controls both the power required to apply the ultrasonic vibration and the pressure at which the horn presses the adhesive, or by controlling only the amplitude of the ultrasonic wave, the exothermic temperature due to self-heating of the adhesive is desired within a short time. There is an advantage that can be controlled by temperature.
- the prior art requires a cooling line to block the heat generated from the thermocompression head to be transferred to the vertical conveying device for fixing and up and down the thermocompression head in addition to the adhesive
- the present invention is a horn (horn) Since it maintains this room temperature, such a device is not necessary, and the structure has the simple advantage.
- FIG. 2 is a state diagram for explaining the alignment step of FIG.
- FIG. 3 is a state diagram for explaining the ultrasonic connection step (S20) of FIG.
- Figure 4 is a graph of the exothermic temperature of the anisotropic conductive film (ACF) measured by changing the power (160), 180W and 200W required when applying the ultrasonic vibration when the bonding force is constant at 60N.
- FIG. 5 is a heat generation of the anisotropic conductive film (ACF) measured while maintaining a constant power P required for applying the ultrasonic vibration to 180W and changing the bonding force F to 60N, 90N, 120N. Temperature graph.
- ACF anisotropic conductive film
- ACF anisotropic conductive film
- FIG. 7 is a schematic perspective view of Embodiment 2.
- Example 1 relates to a method for connecting between electronic components by controlling the exothermic temperature of the adhesive according to the present invention.
- FIG. 1 is a flowchart of Embodiment 1
- FIG. 2 is a state diagram for explaining the alignment step of FIG. 1
- FIG. 3 is a state diagram for explaining the ultrasonic connection step S20 of FIG.
- Embodiment 1 has an alignment step S10 and an ultrasonic wave connection step S20.
- connection electrode 20 of the second electronic component is disposed above the connection electrode 10 of the first electronic component for electrical connection.
- the conductive adhesive or the non-conductive adhesive 30 is disposed between the connecting electrode 10 of the first electronic component and the connecting electrode 20 of the second electronic component.
- the upper portion of the connection electrode 20 of the second electronic component through the connection electrode 20 of the second electronic component to apply a pressure and ultrasonic vibration to the conductive adhesive or non-conductive adhesive 30 (horn) ( 40) is arranged.
- the first electronic component and the second electronic component may each be any one of a semiconductor chip, a flexible substrate, a rigid substrate, a PET film, or a glass substrate.
- the conductive adhesive may be an isotropic conductive adhesive (ICA) or anisotropic conductive adhesive (ACA).
- the anisotropic conductive adhesive (ACA) may be an anisotropic conductive film (ACF) or anisotropic conductive adhesive.
- the nonconductive adhesive may be a non-conductive film (NCF) or a non-conductive paste (NCF).
- the conductive adhesive or nonconductive adhesive 30 disposed between the connecting electrode 10 of the first electronic component and the connecting electrode 20 of the second electronic component is an anisotropic conductive film (ACF).
- ACF anisotropic conductive film
- the ultrasonic connecting step S20 pressure and ultrasonic vibration are applied to the anisotropic conductive film ACF through the connecting electrode 20 of the second electronic component by a horn 40 of the ultrasonic generator.
- the anisotropic conductive film (ACF) is self-heated and cured so as to interconnect the connecting electrode 10 of the first electronic component with the connecting electrode 20 of the second electronic component.
- the applied ultrasonic vibration may be a longitudinal vibration, a lateral vibration, or a mixture of the longitudinal vibration and the lateral vibration.
- the ultrasonic vibration may be a connection electrode 10 of the first electronic component or an anisotropic conductive film (ACF).
- ACF anisotropic conductive film
- f represents the frequency of the ultrasonic waves
- ⁇ represents the strain of the anisotropic conductive film (ACF) generated when applying the pressure and ultrasonic vibration by the horn 40
- E is anisotropic The loss modulus of the conductive film (ACF) is shown.
- the strain of the anisotropic conductive film (ACF) generated when the pressure and the ultrasonic vibration are applied By controlling the strain, the self-heating temperature of the anisotropic conductive film (ACF) is controlled.
- ACF the strain of the anisotropic conductive film
- ACF the exothermic temperature of the anisotropic conductive film
- the bonding force represents a force that the horn 40 compresses the anisotropic conductive film (ACF) through the connection electrode 20 of the second electronic component. Therefore, the bonding force is a value obtained by multiplying the pressure by the horn 40 and the area of the anisotropic conductive film (ACF) to which the pressure is applied.
- FIG. 4 is a graph showing an exothermic temperature of the anisotropic conductive film (ACF) measured by changing power of the ultrasonic vibration to 160 W, 180 W and 200 W when the bonding force is constant at 60 N.
- ACF anisotropic conductive film
- the bonding force is constant at 60N
- the power required for applying the ultrasonic vibration is changed from 160W to 200W
- the exothermic temperature of the anisotropic conductive film (ACF) is 200 ° C. It can be seen that the increase to 350 °C.
- FIG. 5 is a heat generation of the anisotropic conductive film (ACF) measured while maintaining a constant power P required for applying the ultrasonic vibration to 180W and changing the bonding force F to 60N, 90N, 120N.
- the temperature graph is shown.
- the exothermic temperature of the anisotropic conductive film is increased. It can be seen that the decrease from 290 °C to 180 °C.
- Equation 2 the power (power) required when applying the ultrasonic vibration is directly proportional to the work performed by the ultrasonic vibration. Therefore, Equation 2 below holds true.
- P denotes the power required when the ultrasonic vibration is applied
- W denotes the work performed during the single vibration of the ultrasonic wave
- f denotes the frequency of the ultrasonic wave.
- Equation 3 Since work is expressed by the product of the applied force and the moving distance in the applied force direction, Equation 3 below holds true.
- W denotes the work performed during the single vibration of the ultrasonic wave as in [Equation 2]
- F denotes that the horn 40 is the anisotropic conductive film through the connecting electrode 20 of the second electronic component.
- the bonding force which is the force for compressing (ACF)
- A represents the amplitude of the ultrasonic wave.
- Equation 4 Equation 4 below is established.
- t represents the thickness of the anisotropic conductive film (ACF).
- Equation 7 Equation 7 below is obtained.
- dQ is a self heating value generated in the anisotropic conductive film (ACF) in proportion to the power P required when the ultrasonic vibration is applied when the bonding force F is constant. It can be seen.
- dQ is inversely proportional to the bonding force F when the power P required when the ultrasonic vibration is applied is constant, in which dQ is generated in the anisotropic conductive film (ACF) from FIG. It can be seen.
- FIG. 4 FIG. 5, and Equation 7, generated in the anisotropic conductive film (ACF) by controlling both the power (P) and the bonding force (F) required for applying the ultrasonic vibration. It can be seen that the self-heating amount of dQ, that is, the heat generation temperature of the anisotropic conductive film (ACF) can be adjusted.
- the anisotropic conductive film by controlling the strain (strain) of the anisotropic conductive film (ACF) to control the exothermic temperature which is a temperature during self-heating of the anisotropic conductive film (ACF), the anisotropic conductive film (
- a method of controlling the strain of the ACF a method of controlling both the power P and the bonding force F required when the ultrasonic vibration is applied may be selected.
- the power P and the bonding force F required when the ultrasonic vibration is applied can be easily controlled to have a desired value by a controller. That is, the power P and the bonding force F must be controlled so that the heat generation temperature of the anisotropic conductive film ACF can be maintained at a constant temperature.
- the power P and the bonding force F bonding force) F can be controlled by the controller.
- FIG. 6 (a) shows the anisotropic conductive film (ACF) measured as the amplitude A of the ultrasonic wave is changed from 10% to 50% of the maximum amplitude while the bonding force F is kept constant at 80N.
- Fig. 6 (b) shows that the amplitude A of the ultrasonic wave is changed from 10% to 50% of the maximum amplitude while the bonding force F is constantly maintained at 120N.
- An exothermic temperature graph of the measured anisotropic conductive film (ACF) is shown.
- the maximum amplitude of the ultrasonic waves is 20 ⁇ m.
- the exothermic temperature of the anisotropic conductive film (ACF) increases from 70 ° C to 270 ° C as the amplitude A of the ultrasonic wave increases.
- the exothermic temperature of the anisotropic conductive film (ACF) increases very rapidly regardless of other variables to form a stable high plateau within a short time. That is, it can be seen that the exothermic temperature of the anisotropic conductive film (ACF) is controlled only by the amplitude A of the ultrasonic wave regardless of the bonding force (F).
- dQ depends only on the amplitude A of the ultrasonic wave for the self-heating amount generated in the anisotropic conductive film (ACF) for the anisotropic conductive film (ACF) having a specific thickness. That is, it can be seen that the dQ is controlled only by the amplitude A of the ultrasonic wave regardless of the bonding force F. This is consistent with the graphs of Figs. 6A and 6B.
- this is distinguished from the case of controlling the exothermic temperature of the dQ or the anisotropic conductive film (ACF) through the power (P) and the bonding force (F).
- the exothermic temperature of the dQ or the anisotropic conductive film (ACF) is controlled through the power P and the bonding force F, the P and the F are both control variables of the dQ, so the P If only one of the above F is controlled, the target exothermic temperature cannot be achieved.
- the anisotropic conductive film by controlling the strain (strain) of the anisotropic conductive film (ACF) to control the exothermic temperature which is a temperature during self-heating of the anisotropic conductive film (ACF), the anisotropic conductive film (S) (
- a method of controlling only the amplitude A of the ultrasonic wave may be selected.
- the amplitude A of the ultrasonic wave can be easily controlled to have a desired value by the PID controller. That is, the amplitude A of the ultrasonic waves should be controlled so that the heat generation temperature of the anisotropic conductive film (ACF) can be maintained at a constant temperature.
- the amplitude A of the ultrasonic waves may be controlled by a controller.
- the prior art requires a cooling line for preventing heat generated from the thermocompression head from being transferred to an up-and-down conveying device for fixing and vertically transporting the thermocompression head in addition to the anisotropic conductive film (ACF).
- ACF anisotropic conductive film
- the prior art has a heat transfer system by heat transfer from the thermocompression head to the adhesive as a basic principle, so a large power is required to preheat the thermocompression head in advance and maintain it at a high temperature. Since the heating system is a basic principle, the adhesive can be maintained at a desired temperature in a short time, and thus no preheating is required, and thus a large power is not required.
- the prior art has a disadvantage that the heat transfer system as a basic principle, because it requires a preheating, takes a lot of time for preheating, and takes a long time to connect the electrode between the electronic components, the above embodiment As described above, since the self-heating system by ultrasonic vibration is a basic principle, there is no need for preheating, and thus the preparation time for achieving the heat-generating temperature is short and the time for connecting the connection electrodes between electronic components is short.
- the heating temperature of the anisotropic conductive film ACF is the first electronic component. It changes according to the area, shape, etc. of the said anisotropic conductive film ACF newly arrange
- the above-described embodiment is the anisotropic conductive film newly changed by controlling both the power P and the bonding force F required when the ultrasonic vibration is applied, or by controlling only the amplitude A of the ultrasonic wave ( The exothermic temperature of the ACF) can be controlled within a short time.
- Example 2 relates to a connection device between electronic components through controlling the exothermic temperature of the adhesive for performing Example 1.
- FIG. 7 shows a schematic perspective view of Embodiment 2.
- Embodiment 1 has a head unit 100.
- the head unit 100 has a head unit plate 110, a converter 120, a booster 130, and a horn.
- Converter 120 is fixed to the head unit plate 110.
- Converter 120 is a device for generating ultrasonic vibrations.
- the booster 130 is fixed to the head unit plate 110, and the upper side is connected to the lower side of the converter 120 to transmit and amplify the ultrasonic vibration generated by the converter 120.
- the horn 140 is integrally connected to the lower side of the converter 120 so that ultrasonic vibration is transmitted from the converter 120.
- Horn 140 is a device for transmitting the ultrasonic vibration transmitted from the converter 120 to the conductive adhesive or the non-conductive adhesive described in Example 1.
- the conductive adhesive or the non-conductive adhesive is an adhesive disposed therebetween to interconnect the connecting electrode of the first electronic component with the connecting electrode of the second electronic component.
- Embodiment 2 has a support plate 200.
- Shanghai conveying means 210 is fixed to the support plate 200.
- the shanghai conveying means 210 may be any one of a hydraulic cylinder, a pneumatic cylinder, and a motor as a conveying means for conveying the head unit 100 up and down. Therefore, the Shanghai transport means 210 is connected to the head unit plate 110 through a floating joint 214, thereby integrally combining the converter 120, the booster 130 and the horn 140. You can move up and down.
- a load cell 220 may be installed at the head unit plate 110, and a load cell contact portion 220 may be installed at the support plate 200.
- the load cell contact part 220 contacts the load cell 200 as the load cell 200 moves downward so that the vibration generating surface of the horn 140 is connected to the connection electrode of the first electronic component, and the second It is for measuring the pressure applied to the connecting electrode of the electronic component and the conductive adhesive or the non-conductive adhesive.
- Embodiment 1 has a controller 300.
- the controller 300 is circuitally connected to the converter 120 and the load cell 220.
- the controller 300 is connected to the converter 120 to control the amplitude of the ultrasonic waves generated from the converter 120, or to control the power supplied to the converter 120 to generate the ultrasonic waves, the horn 140 of the
- the vibration generating surface is for controlling the pressure applied to the connecting electrode of the first electronic component, the connecting electrode of the second electronic component, and the conductive adhesive or the non-conductive adhesive.
- the controller 300 is circuitally connected to the load cell 150 to receive the pressure applied to the vibration generating surface of the horn (140).
- the controller 300 may be a PID controller.
- Reference numeral 230 denotes a connection electrode alignment plate on which the connection electrode of the first electronic component and the connection electrode of the second electronic component are aligned with the conductive adhesive or the non-conductive adhesive interposed therebetween.
- the connection electrode alignment plate 230 is fixed to the support plate 200.
- the load cell 200 may be installed in the connecting electrode alignment plate 230.
- the load cell contact portion 220 may protrude from the lower end of the head unit plate 110 to be in contact with the load cell 200 when the head unit 100 moves downward.
- the present invention controls both the power required to apply the ultrasonic vibration and the pressure at which the horn presses the adhesive, or controls only the amplitude of the ultrasonic wave to bring the exothermic temperature due to self-heating of the adhesive to a desired temperature in a short time. Since there is an advantage such that it can be adjusted, it can be widely used to interconnect the connection electrodes formed on electronic components such as semiconductor chips or substrates.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Wire Bonding (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Abstract
Description
Claims (11)
- 전도성 접착제 또는 비전도성 접착제를 사이에 두고 제1 전자부품의 접속부 전극의 상측에 제2 전자부품의 접속부 전극을 정렬하는 정렬 단계;혼(horn)에 의하여 상기 제2 전자부품의 접속부 전극을 통하여 상기 전도성 접착제 또는 비전도성 접착제에 압력과 초음파 진동을 인가하여 상기 전도성 접착제 또는 비전도성 접착제를 자체 발열시킨 뒤 경화시켜 상기 제1 전자부품의 접속부 전극과 제2 전자부품의 접속부 전극을 상호 접속시키는 초음파 접속 단계;를 포함하되,상기 초음파 접속 단계는 상기 압력과 상기 초음파 진동 인가시 발생되는 상기 접착제의 스트레인(strain)을 조절하여 상기 접착제의 자체 발열시의 온도인 발열 온도를 조절하는 것을 특징으로 하는 접착제의 발열 온도 조절을 통한 전자부품간 접속 방법.
- 제1항에 있어서,상기 접착제의 스트레인(strain)은 상기 초음파 진동에 소요되는 파우워(power) 및 상기 압력 양자를 제어함으로써 조절되는 것을 특징으로 하는 접착제의 발열 온도 조절을 통한 전자부품간 접속 방법.
- 제1항에 있어서,상기 접착제의 스트레인(strain)은 상기 초음파 진동의 진폭을 제어함으로써 조절되는 것을 특징으로 하는 접착제의 발열 온도 조절을 통한 전자부품간 접속 방법.
- 제2항에 있어서,상기 초음파 진동에 소요되는 파우워(power) 및 상기 압력은 컨트롤러에 의하여 제어되는 것을 특징으로 하는 접착제의 발열 온도 조절을 통한 전자부품간 접속 방법.
- 제3항에 있어서,상기 초음파 진동의 진폭은 컨트롤러에 의하여 제어되는 것을 특징으로 하는 접착제의 발열 온도 조절을 통한 전자부품간 접속 방법.
- 제1항 내지 제5항 중 어느 한 항에 있어서,상기 초음파 진동은 상기 제1 전자부품의 접속부 전극, 상기 제2 전자부품의 접속부 전극 및 상기 접착제에 수직방향인 종방향 진동인 것을 특징으로 하는 접착제의 발열 온도 조절을 통한 전자부품간 접속 방법.
- 제1항 내지 제5항 중 어느 한 항에 있어서,상기 전도성 접착제는 등방성 전도성 접착제 또는 이방성 전도성 접착제인 것을 특징으로 하는 접착제의 발열 온도 조절을 통한 전자부품간 접속 방법.
- 제7항에 있어서,상기 이방성 전도성 접착제는 이방성 전도성 필름 또는 이방성 전도성 페이스트인 것을 특징으로 하는 접착제의 발열 온도 조절을 통한 전자부품간 접속 방법.
- 제1항 내지 제5항 중 어느 한 항에 있어서,상기 비전도성 접착제는 비전도성 필름 또는 비전도성 페이스트인 것을 특징으로 하는 접착제의 발열 온도 조절을 통한 전자부품간 접속 방법.
- 상기 제1 전자부품 및 상기 제2 전자부품은 각각 반도체칩, 연성기판, 경성기판, PET필름, 또는 유리기판중 어느 하나인 것을 특징으로 하는 접착제의 발열 온도 조절을 통한 전자부품간 접속 방법.
- 제1항 내지 제5항 중 어느 한 항의 전자부품간 접속 방법을 수행하기 위한 전자부품간 접속 장치로서,상기 초음파 진동을 발생시키는 컨버터;상기 컨버터에 의하여 발생된 상기 초음파 진동을 전달 및 증폭시키도록 상측이 상기 컨버터에 연결되는 부스터;상기 초음파 진동을 상기 제1 전자부품의 접속부 전극과 상기 제2 전자부품의 접속부 전극 사이에 배치된 상기 전도성 접착제 또는 상기 비전도성 접착제에 전달하도록 상기 부스터의 하측에 연결되는 혼(horn);상기 컨버터, 부스터 및 혼(horn)을 일체로 상하 이동시키기 위한 수단으로서 유압실린더와 공압실린더 및 모터 중의 어느 하나로 이루어지는 상하이송수단;상기 혼(horn)의 진동 발생면이 상기 제1 전자부품의 접속부 전극, 상기 제2 전자부품의 접속부 전극 및 상기 전도성 접착제 또는 상기 비전도성 접착제에 가하는 압력을 측정하기 위한 로드 셀;상기 컨버터에 연결되어 상기 컨버터로부터 발생되는 초음파의 진폭을 제어하거나, 상기 컨버터가 초음파를 발생하는데 공급되는 파워 및 상기 혼(horn)의 진동 발생면에 가해지는 압력을 제어하기 위한 컨트롤러;를 포함하는 것을 특징으로 하는 접착제의 발열 온도 조절을 통한 전자부품간 접속 장치.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010537876A JP2011505710A (ja) | 2008-11-12 | 2009-01-07 | 接着剤の発熱温度調節による電子部品間の接続方法及び接着剤の発熱温度調節による電子部品間の接続装置 |
DE112009000009T DE112009000009T5 (de) | 2008-11-12 | 2009-01-07 | Verfahren zum Verbinden elektrischer Vorrichtungen durch Anpassung der Erwärmungstemperatur eines Klebstoffs und Vorrichtung zum Verbinden elektrischer Vorrichtungen durch Anpassung der Erwärmungstemperatur eines Klebstoffs |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080111960A KR20100053016A (ko) | 2008-11-12 | 2008-11-12 | 접착제의 발열 온도 조절을 통한 전자부품간 접속 방법 및 접착제의 발열 온도 조절을 통한 전자부품간 접속 장치 |
KR10-2008-0111960 | 2008-11-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010055970A1 true WO2010055970A1 (ko) | 2010-05-20 |
Family
ID=42170097
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2009/000056 WO2010055970A1 (ko) | 2008-11-12 | 2009-01-07 | 접착제의 발열 온도 조절을 통한 전자부품간 접속 방법 및 접착제의 발열 온도 조절을 통한 전자부품간 접속 장치 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2011505710A (ko) |
KR (1) | KR20100053016A (ko) |
DE (1) | DE112009000009T5 (ko) |
WO (1) | WO2010055970A1 (ko) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102520768B1 (ko) * | 2021-04-21 | 2023-04-12 | 주식회사 경신전선 | 이방성 도전 필름을 이용한 회로장치의 초음파 접합방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020022080A (ko) * | 2002-01-03 | 2002-03-23 | 임종철 | 이방성 전도 필름을 초음파 열압착하는 칩온글래스 본딩장치 |
US7115446B2 (en) * | 2003-11-25 | 2006-10-03 | Ja Uk Koo | Flip chip bonding method for enhancing adhesion force in flip chip packaging process and metal layer-built structure of substrate for the same |
KR20070025889A (ko) * | 2005-11-24 | 2007-03-08 | 한국과학기술원 | 초음파를 이용한 전자부품간의 접속방법 |
US20070257087A1 (en) * | 2006-05-08 | 2007-11-08 | Dukane Corporation | Ultrasonic press using servo motor with integrated linear actuator |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH03183527A (ja) * | 1989-12-13 | 1991-08-09 | Hitachi Constr Mach Co Ltd | 超音波接合装置 |
US5855706A (en) * | 1992-04-21 | 1999-01-05 | Branson Ultrasonics Corporation | Simultaneous amplitude and force profiling during ultrasonic welding of thermoplastic workpieces |
JPH10189657A (ja) * | 1996-12-27 | 1998-07-21 | Rohm Co Ltd | 端子間の接続方法、半導体チップの実装方法、半導体チップのボンディング方法、および端子間の接続構造 |
JPH1120024A (ja) * | 1997-07-02 | 1999-01-26 | Fuji Photo Film Co Ltd | 超音波溶着装置 |
JP2004055996A (ja) * | 2002-07-23 | 2004-02-19 | Seiko Epson Corp | 電子部品の接続方法および接続装置、並びに電気光学装置の製造方法 |
JP3963918B2 (ja) * | 2005-02-24 | 2007-08-22 | 株式会社京都製作所 | 超音波溶着装置 |
KR20080111960A (ko) | 2007-06-20 | 2008-12-24 | 엘지전자 주식회사 | 플라즈마 디스플레이 장치 |
-
2008
- 2008-11-12 KR KR1020080111960A patent/KR20100053016A/ko not_active Application Discontinuation
-
2009
- 2009-01-07 JP JP2010537876A patent/JP2011505710A/ja active Pending
- 2009-01-07 DE DE112009000009T patent/DE112009000009T5/de not_active Withdrawn
- 2009-01-07 WO PCT/KR2009/000056 patent/WO2010055970A1/ko active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20020022080A (ko) * | 2002-01-03 | 2002-03-23 | 임종철 | 이방성 전도 필름을 초음파 열압착하는 칩온글래스 본딩장치 |
US7115446B2 (en) * | 2003-11-25 | 2006-10-03 | Ja Uk Koo | Flip chip bonding method for enhancing adhesion force in flip chip packaging process and metal layer-built structure of substrate for the same |
KR20070025889A (ko) * | 2005-11-24 | 2007-03-08 | 한국과학기술원 | 초음파를 이용한 전자부품간의 접속방법 |
US20070257087A1 (en) * | 2006-05-08 | 2007-11-08 | Dukane Corporation | Ultrasonic press using servo motor with integrated linear actuator |
Also Published As
Publication number | Publication date |
---|---|
KR20100053016A (ko) | 2010-05-20 |
JP2011505710A (ja) | 2011-02-24 |
DE112009000009T5 (de) | 2010-09-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2011007947A1 (ko) | 초음파 접합용 이방성 전도성 접착제 및 이를 이용한 전자부품 간 접속방법 | |
WO2018070801A2 (ko) | 다층형 캐리어 필름 및 이를 이용한 소자 전사 방법과 이 방법을 이용하여 전자제품을 제조하는 전자제품 제조방법 | |
WO2019085138A1 (zh) | 显示装置、及阵列基板与 ic 芯片的绑定方法 | |
WO2019160241A1 (ko) | 압착 장치 및 이를 이용한 광원 모듈의 제조방법 | |
WO2010055970A1 (ko) | 접착제의 발열 온도 조절을 통한 전자부품간 접속 방법 및 접착제의 발열 온도 조절을 통한 전자부품간 접속 장치 | |
WO2011019132A1 (ko) | 도전성 접착제, 이를 이용한 반도체의 실장방법 및 웨이퍼 레벨 패키지 | |
WO2018113008A1 (zh) | 显示面板及显示装置 | |
US6524888B2 (en) | Method of attaching a conformal chip carrier to a flip chip | |
KR101996936B1 (ko) | 백업 히팅 acf 본딩장치 | |
US20080035264A1 (en) | Hot press for electronic devices and hot pressing method | |
TW201808084A (zh) | 電子零件安裝裝置 | |
WO2018174355A1 (ko) | 본딩 헤드 및 이를 갖는 본딩 장치 | |
JPH1050930A (ja) | マルチチップ実装法 | |
WO2018218624A1 (zh) | 柔性面板与柔性线路板的压合方法及压合设备 | |
JP2007035546A (ja) | 圧着装置及び圧着方法 | |
WO2022045467A1 (ko) | 하이브리드 필름형 히터 제조방법 및 하이브리드 필름형 히터 | |
WO2017090875A1 (ko) | 이방 도전성 필름 및 이를 이용한 접속 구조체 | |
WO2023090842A1 (ko) | 전극조립체, 그의 제조장치 및 제조방법 | |
JPH10294563A (ja) | マルチチップ実装法 | |
WO2024096705A1 (ko) | 스택 장치 | |
WO2016085227A2 (ko) | 압전 장치 및 그 제조 방법 | |
WO2009108030A2 (en) | Printed circuit board and method of manufacturing the same | |
WO2012153895A1 (ko) | 반도체 테스트 소켓 | |
WO2024219947A1 (ko) | 전도성 페이스트를 이용한 반도체 칩 실장 방법 | |
JPH03289070A (ja) | 電極端子の相互接続方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 2010537876 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1120090000096 Country of ref document: DE |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09826203 Country of ref document: EP Kind code of ref document: A1 |
|
RET | De translation (de og part 6b) |
Ref document number: 112009000009 Country of ref document: DE Date of ref document: 20100930 Kind code of ref document: P |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8607 |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 09826203 Country of ref document: EP Kind code of ref document: A1 |