WO2010044235A1 - スパッタリング装置、薄膜形成方法及び電界効果型トランジスタの製造方法 - Google Patents

スパッタリング装置、薄膜形成方法及び電界効果型トランジスタの製造方法 Download PDF

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WO2010044235A1
WO2010044235A1 PCT/JP2009/005282 JP2009005282W WO2010044235A1 WO 2010044235 A1 WO2010044235 A1 WO 2010044235A1 JP 2009005282 W JP2009005282 W JP 2009005282W WO 2010044235 A1 WO2010044235 A1 WO 2010044235A1
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Prior art keywords
substrate
sputtering
target
targets
thin film
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PCT/JP2009/005282
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English (en)
French (fr)
Japanese (ja)
Inventor
倉田敬臣
清田淳也
新井真
赤松泰彦
石橋暁
斎藤一也
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株式会社アルバック
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Priority to CN2009801407046A priority Critical patent/CN102187007A/zh
Priority to US13/123,720 priority patent/US20110198213A1/en
Priority to JP2010533814A priority patent/JPWO2010044235A1/ja
Priority to KR1020117005631A priority patent/KR101279214B1/ko
Publication of WO2010044235A1 publication Critical patent/WO2010044235A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Definitions

  • the present invention relates to a sputtering apparatus for forming a thin film on a substrate, a thin film forming method using the apparatus, and a method for manufacturing a field effect transistor.
  • a sputtering apparatus has been used for forming a thin film on a substrate.
  • the sputtering apparatus has a sputtering target (hereinafter referred to as “target”) disposed inside a vacuum chamber, and a plasma generating means for generating plasma near the surface of the target.
  • a sputtering apparatus forms a thin film by sputtering the surface of a target with ions in plasma and depositing particles (sputtered particles) knocked out of the target on a substrate (see, for example, Patent Document 1).
  • a thin film formed by a sputtering method (hereinafter also referred to as a “sputtered thin film”) has sputtered particles flying from a target incident on the surface of the substrate with high energy, so compared to a thin film formed by a vacuum deposition method or the like, High adhesion to the substrate. Therefore, the base layer (base film or base substrate) on which the sputtered thin film is formed is likely to be greatly damaged by collision with incident sputtered particles. For example, when an active layer of a thin film transistor is formed by a sputtering method, desired film characteristics may not be obtained due to damage to the underlayer.
  • an object of the present invention is to provide a sputtering apparatus, a thin film forming method, and a field effect transistor manufacturing method capable of reducing damage to an underlayer.
  • a sputtering apparatus includes a vacuum chamber capable of maintaining a vacuum state, a plurality of targets, a support portion, and plasma generation means.
  • the plurality of targets have a surface to be sputtered and are linearly arranged inside the vacuum chamber.
  • the support part has a support region for supporting the substrate, and is fixed inside the vacuum chamber.
  • the plasma generating means sequentially generates plasma for sputtering the surface to be sputtered of each target along the arrangement direction of the targets.
  • the thin film formation method includes stationary the substrate inside a vacuum chamber in which a plurality of targets are linearly arranged. A thin film is formed on the surface of the substrate by sequentially sputtering the targets in the arrangement direction.
  • a method for manufacturing a field effect transistor according to one embodiment of the present invention includes forming a gate insulating film on a substrate.
  • the substrate is stationary in a vacuum chamber in which a plurality of targets having an In—Ga—Zn—O-based composition are linearly arranged.
  • An active layer is formed on the gate insulating film by sequentially sputtering the targets in the arrangement direction.
  • FIG. 1 is a schematic plan view showing a vacuum processing apparatus according to an embodiment of the present invention. It is the figure which showed typically the mechanism for changing the attitude
  • a sputtering apparatus includes a vacuum chamber capable of maintaining a vacuum state, a plurality of targets, a support portion, and plasma generation means.
  • the plurality of targets have a surface to be sputtered and are linearly arranged inside the vacuum chamber.
  • the support part has a support region for supporting the substrate, and is fixed inside the vacuum chamber.
  • the plasma generating means sequentially generates plasma for sputtering the surface to be sputtered of each target along the arrangement direction of the targets.
  • the sputtering apparatus forms a thin film on the surface of the substrate on the support portion by sequentially sputtering a plurality of targets arranged inside the vacuum chamber along the arrangement direction. Since sputtered particles are deposited on the surface of the substrate so as to cross the substrate, a film formation form similar to the passing film formation method can be obtained. As a result, the rate at which the sputtered particles are incident on the surface of the substrate from an oblique direction is increased, and damage to the underlying layer can be reduced.
  • linearly arranged means that the targets are arranged so as to cross the support portion, and is not limited to being strictly aligned linearly.
  • array direction means one direction along the target array direction.
  • the target portion located on the most upstream side in the arrangement direction may be located outside the support region. Thereby, it becomes possible to make the sputtered particles generated by sputtering the target portion enter the substrate from an oblique direction.
  • the plasma generating means may include a magnet that forms a magnetic field on the surface to be sputtered.
  • the magnet is disposed on each target so as to be movable along the arrangement direction. By making the magnet movable, the incident angle of the sputtered particles with respect to the substrate can be easily controlled.
  • the plurality of targets can be made of the same material. This makes it possible to form a thin film of a predetermined material with a desired film thickness while reducing damage to the underlying layer.
  • the thin film forming method includes stationary the substrate inside a vacuum chamber in which a plurality of targets are linearly arranged. A thin film is formed on the surface of the substrate by sequentially sputtering the targets in the arrangement direction.
  • the thin film forming method forms a thin film on the surface of the substrate by sequentially sputtering a plurality of targets arranged in the vacuum chamber along the arrangement direction. Since sputtered particles are deposited on the surface of the substrate so as to cross the substrate, a film formation form similar to the passing film formation method can be obtained. As a result, the rate at which the sputtered particles are incident on the surface of the substrate from an oblique direction is increased, and damage to the underlying layer can be reduced.
  • a target portion located on the most upstream side in the arrangement direction among the plurality of targets may be located outside the peripheral edge portion of the substrate. Thereby, it becomes possible to make the sputtered particles generated by sputtering the target portion incident on the substrate from an oblique direction.
  • Magnets for forming a magnetic field on the surface to be sputtered are arranged on the respective targets, and the magnets arranged on the sputtered targets are moved along the arrangement direction while the targets are sputtered. You may do it. This makes it possible to easily control the incident angle of sputtered particles with respect to the substrate.
  • a manufacturing method of a field effect transistor includes forming a gate insulating film on a substrate.
  • the substrate is stationary in a vacuum chamber in which a plurality of targets having an In—Ga—Zn—O-based composition are linearly arranged.
  • An active layer is formed on the gate insulating film by sequentially sputtering the targets in the arrangement direction.
  • an active layer is formed on the surface of the substrate by sequentially sputtering a plurality of targets arranged in the vacuum chamber along the arrangement direction. Since sputtered particles are deposited on the surface of the substrate so as to cross the substrate, a film formation form similar to the passing film formation method can be obtained. As a result, the rate at which the sputtered particles are incident on the surface of the substrate from an oblique direction is increased, and damage to the underlying layer can be reduced. In addition, an active layer having an In—Ga—Zn—O-based composition having desired transistor characteristics can be stably manufactured.
  • FIG. 1 is a schematic plan view showing a vacuum processing apparatus according to an embodiment of the present invention.
  • the vacuum processing apparatus 100 is an apparatus for processing a glass substrate (hereinafter simply referred to as a substrate) 10 used as a base material, for example, as a base material, and is typically a field effect transistor having a so-called bottom gate type transistor structure. It is a device that bears a part of the manufacturing.
  • the vacuum processing apparatus 100 includes a cluster type processing unit 50, an inline type processing unit 60, and an attitude conversion chamber 70. Each of these chambers is formed inside a single vacuum chamber or a combination of a plurality of vacuum chambers.
  • the cluster processing unit 50 includes a plurality of horizontal processing chambers for processing the substrate 10 in a state where the substrate 10 is substantially horizontal.
  • the cluster processing unit 50 includes a load lock chamber 51, a transfer chamber 53, and a plurality of CVD (Chemical Vapor Deposition) chambers 52.
  • CVD Chemical Vapor Deposition
  • the load lock chamber 51 switches the atmospheric pressure and the vacuum state, loads the substrate 10 from the outside of the vacuum processing apparatus 100, and unloads the substrate 10 to the outside.
  • the transfer chamber 53 includes a transfer robot (not shown). Each CVD chamber 52 is connected to the transfer chamber 53 and performs a CVD process on the substrate 10.
  • the transfer robot in the transfer chamber 53 carries the substrate 10 into the load lock chamber 51, each CVD chamber 52, and the posture changing chamber 70 described later, and also carries the substrate 10 out of each chamber.
  • a gate insulating film of a field effect transistor is typically formed.
  • the inside of the transfer chamber 53 and the CVD chamber 52 can be maintained at a predetermined degree of vacuum.
  • the posture conversion chamber 70 converts the posture of the substrate 10 from horizontal to vertical and from vertical to horizontal.
  • a holding mechanism 71 that holds the substrate 10 is provided in the posture change chamber 70, and the holding mechanism 71 is configured to be rotatable about a rotation shaft 72.
  • the holding mechanism 71 holds the substrate 10 by a mechanical chuck or a vacuum chuck.
  • the posture changing chamber 70 can be maintained at substantially the same degree of vacuum as the transfer chamber 53.
  • the holding mechanism 71 may be rotated by driving a driving mechanism (not shown) connected to both ends of the holding mechanism 71.
  • the cluster processing unit 50 may be provided with a heating chamber and a chamber for performing other processes in addition to the CVD chamber 52 and the posture changing chamber 70 connected to the transfer chamber 53.
  • the in-line type processing unit 60 includes a first sputtering chamber 61, a second sputtering chamber 62, and a buffer chamber 63, and processes the substrate 10 with the substrate 10 standing substantially vertically.
  • a thin film (hereinafter simply referred to as an IGZO film) having an In—Ga—Zn—O-based composition is typically formed on the substrate 10 as will be described later.
  • a stopper layer film is formed on the IGZO film.
  • the IGZO film constitutes an active layer of the field effect transistor.
  • the stopper layer film functions as an etching protective layer that protects the channel region of the IGZO film from the etchant in the patterning step of the metal film constituting the source electrode and the drain electrode and the step of etching away the unnecessary region of the IGZO film.
  • the first sputtering chamber 61 has a plurality of sputtering cathodes Tc containing a target material for forming the IGZO film.
  • the second sputtering chamber 62 has a single sputtering cathode Ts containing a target material for forming a stopper layer film.
  • the first sputtering chamber 61 is configured as a fixed film forming type sputtering apparatus.
  • the second sputtering chamber 62 may be configured as a fixed film forming type sputtering apparatus or may be configured as a through film forming type sputtering apparatus.
  • a two-path transport path for the substrate 10 composed of the forward path 64 and the return path 65 is prepared, and the substrate 10 is in a vertical state, or There is provided a support mechanism (not shown) that supports the device in a state slightly tilted from the vertical.
  • the sputtering process is performed when the substrate 10 passes through the return path 65.
  • the substrate 10 supported by the support mechanism is transported by a mechanism such as a transport roller and a rack and pinion (not shown).
  • a gate valve 54 is provided between the chambers, and these gate valves 54 are individually controlled to open and close.
  • the buffer chamber 63 is connected between the posture changing chamber 70 and the second sputter chamber 62 and functions to be a buffer region for the pressure atmosphere of each of the posture changing chamber 70 and the second sputter chamber 62.
  • the degree of vacuum of the buffer chamber 63 is set so that the pressure is substantially the same as the pressure in the posture changing chamber 70. Is controlled.
  • the buffer chamber is set to have substantially the same pressure as the pressure in the second sputter chamber 62.
  • the degree of vacuum of 61 is controlled.
  • a special gas such as a cleaning gas may be used to clean the chamber.
  • a support mechanism and a transport mechanism unique to the vertical processing apparatus such as those provided in the above-described sputtering chamber 62, are corroded by a special gas. Is concerned about the problem.
  • the CVD chamber 52 is composed of a horizontal apparatus, such a problem can be solved.
  • the sputtering apparatus when configured as a horizontal apparatus, for example, when the target is disposed immediately above the substrate, the target material attached to the periphery of the target may fall on the substrate and contaminate the substrate 10. .
  • the target material attached to the deposition preventing plate disposed around the substrate may fall on the electrode and contaminate the electrode.
  • the sputtering chamber 62 As a vertical processing chamber.
  • FIG. 3 is a schematic plan view showing the configuration of the sputtering apparatus that constitutes the first sputtering chamber 61.
  • the first sputtering chamber 61 has the sputtering cathode Tc including a plurality of target portions.
  • the target portions Tc1, Tc2, Tc3, Tc4, and Tc5 have the same configuration, and include a target plate 81, a backing plate 82, and a magnet 83.
  • the first sputtering chamber 61 is connected to a gas introduction line (not shown), and a sputtering gas such as argon and a reactive gas such as oxygen are introduced into the sputtering chamber 61 through the gas introduction line.
  • the target plate 81 is composed of an ingot or a sintered body of a film forming material. In this embodiment mode, an alloy ingot or a sintered body material having an In—Ga—Zn—O composition is used.
  • the backing plate 82 is configured as an electrode connected to an AC power source (including a high frequency power source) (not shown) or a DC power source.
  • the backing plate 82 may include a cooling mechanism in which a cooling medium such as cooling water circulates.
  • the magnet 83 is typically composed of a combination of a permanent magnet and a yoke, and forms a predetermined magnetic field 84 in the vicinity of the surface (surface to be sputtered) of the target plate 81.
  • the sputtering cathode Tc configured as described above generates plasma in the sputtering chamber 61 by plasma generation means including the power source, the magnet 83, the gas introduction line, and the like. That is, when a predetermined AC power source or DC power source is applied to the backing plate 81, sputtering gas plasma is formed in the vicinity of the surface to be sputtered of the target plate 81. Then, the target plate 81 is sputtered by ions in the plasma. Further, a high-density plasma (magnetron discharge) is generated by the magnetic field formed on the target surface by the magnet 83, and it becomes possible to obtain a plasma density distribution corresponding to the magnetic field distribution.
  • plasma generation means including the power source, the magnet 83, the gas introduction line, and the like. That is, when a predetermined AC power source or DC power source is applied to the backing plate 81, sputtering gas plasma is formed in the vicinity of the surface to be sputtered of the target plate 81. Then
  • sputtered particles generated by sputtering the target plate 81 are emitted from the surface of the target plate 81 over an angle range S.
  • the angle range S is controlled by plasma forming conditions and the like.
  • the sputtered particles include particles that protrude in the vertical direction from the surface of the target plate 81 and particles that protrude in the oblique direction from the surface of the target plate 81. Sputtered particles that have jumped out of the target plate 81 of each target portion Tc1 to Tc5 are deposited on the surface of the substrate 10 to form a thin film.
  • the sputtering apparatus includes a controller (not shown) that controls power supply to each of the target units Tc1 to Tc5.
  • the target portions Tc1 to Tc5 are linearly arranged across the surface of the substrate 10 in the sputtering chamber 61.
  • the substrate 10 is supported by a support mechanism (support unit) including a support plate 91 and a clamp mechanism 92, and is stationary (fixed) at a predetermined position on the return path 65 during film formation.
  • the clamp mechanism 92 holds the peripheral portion of the substrate 10 supported by the support region of the support plate 91 facing the sputtering cathode Tc.
  • the facing distance between the sputtering cathode Tc and the support plate 91 is set to be the same.
  • the array length of the target portions Tc1 to Tc5 is larger than the diameter of the substrate 10.
  • the target portions Tc1 and Tc5 located on the most upstream side and the most downstream side are arranged so as to face the outside of the support region of the support plate 91. That is, for example, the target portion Tc1 is arranged at a position where the sputtered particles Sp1 generated by sputtering the target plate 81 are incident on the surface of the substrate 10 from an oblique direction.
  • FIG. 5 is a flowchart showing the order.
  • the transfer chamber 53, the CVD chamber 52, the posture changing chamber 70, the buffer chamber 63, the first sputter chamber 61, and the second sputter chamber 62 are each maintained in a predetermined vacuum state.
  • the substrate 10 is loaded into the load lock chamber 51 (step 101).
  • the substrate 10 is carried into the CVD chamber 52 through the transfer chamber 53, and a predetermined film, for example, a gate insulating film is formed on the substrate 10 by the CVD process (step 102).
  • a predetermined film for example, a gate insulating film is formed on the substrate 10 by the CVD process (step 102).
  • the substrate 10 is carried into the posture changing chamber 70 through the transfer chamber 53, and the posture of the substrate 10 is changed from the horizontal posture to the vertical posture (step 103).
  • the substrate 10 in a vertical posture is carried into the sputtering chamber through the buffer chamber 63 and is transferred to the end of the first sputtering chamber 61 through the forward path 64. Thereafter, the substrate 10 passes through the return path 64, is stopped in the first sputtering chamber 61, and is subjected to the sputtering process as follows. Thereby, for example, an IGZO film is formed on the surface of the substrate 10 (step 104).
  • the substrate 10 is transported in the first sputtering chamber 61 by the support mechanism, and is stopped at a position where the first target portion Tc ⁇ b> 1 opposes the outer peripheral portion of the substrate 10.
  • Argon gas and oxygen gas having a predetermined flow rate are respectively introduced into the first sputtering chamber 61.
  • plasma is formed in the order of the target portions Tc1, Tc2, Tc3, Tc4, and Tc5, whereby each target is sputtered.
  • the film formation regions of the substrate 10 belonging to the emission angle ranges S1 to S5 of the sputtered particles jumping out from the target portions Tc1 to Tc5 are sequentially formed.
  • the sputtered particles that reach the surface of the substrate 10 are sputtered particles emitted obliquely from the target.
  • the number of sputtered particles emitted from the target surface in an oblique direction is smaller than the number of sputtered particles emitted from the target surface in the vertical direction. Therefore, the energy density of the sputtered particles per unit area is smaller for the sputtered particles emitted in an oblique direction than the sputtered particles emitted perpendicularly from the target surface. Can be lowered.
  • the sputtered thin film can be formed without damaging the substrate surface. It becomes possible to form.
  • the IGZO film can be formed with low damage to the gate insulating film on the substrate 10.
  • each target portion can be arranged so that two targets adjacent to each other have the following conditions: . That is, the target-to-target distance and the target-substrate distance are set so that the sputtered particles emitted from one target in an oblique direction can cover the film formation region reached by the sputtered particles emitted from the other target in the vertical direction. .
  • the target-to-target distance and the target-substrate distance are set so that the sputtered particles emitted from one target in an oblique direction can cover the film formation region reached by the sputtered particles emitted from the other target in the vertical direction.
  • the film formation region of the substrate 10 by the sputtered particles emitted in the oblique direction from the target portion Tc1 positioned on the upstream side is perpendicular to the target portion Tc2 on the adjacent downstream side.
  • a film formation region of the substrate 10 by the sputtered particles emitted is covered. This makes it possible to form a thin film with low damage to the base film over the entire surface of the substrate 10.
  • the thin film forming method of the present embodiment sputtered particles emitted in the vertical direction from the target unit on the downstream side are deposited on the thin film initial layer formed by the obliquely evaporated film. Thereby, since the fall of the film-forming rate of a thin film is suppressed, it becomes possible to avoid the fall of productivity.
  • the substrate 10 on which the IGZO film is formed in the first sputtering chamber 61 is transferred to the second sputtering chamber 62 together with the support plate 91.
  • a stopper layer made of, for example, a silicon oxide film is formed on the surface of the substrate 10 (step 104).
  • the film formation process in the second sputtering chamber 62 employs a fixed film formation method in which the substrate 10 is stationary in the second film formation chamber 62 in the same manner as the film formation process in the first sputtering chamber 61.
  • the present invention is not limited to this, and a passing film forming method in which the substrate 10 is formed in the process of passing through the second film forming chamber 62 may be employed.
  • the substrate 10 is carried into the posture changing chamber 70 through the buffer chamber 61, and the posture of the substrate 10 is changed from the vertical posture to the horizontal posture (step 105). Thereafter, the substrate 10 is unloaded outside the vacuum processing apparatus 100 via the transfer chamber 53 and the load lock chamber 51 (step 106).
  • CVD film formation and sputter film formation can be performed consistently within one vacuum processing apparatus 100 without exposing the substrate 10 to the atmosphere. Thereby, productivity can be improved. Further, since moisture and dust in the atmosphere can be prevented from adhering to the substrate 10, it is possible to improve the film quality.
  • the formation of the IGZO film in the first sputtering chamber 61 is performed by sputtering a plurality of target portions Tc1 to Tc5 arranged linearly in order along the arrangement direction. I am doing so. Since sputtered particles are deposited on the surface of the substrate 10 so as to cross the substrate 10, a film formation form similar to the pass film formation method can be obtained. Thereby, the rate at which the sputtered particles are incident on the surface of the substrate 10 from an oblique direction is increased, and the damage to the underlayer can be reduced. In particular, according to the present embodiment, damage to the gate insulating film, which is the underlying layer of the IGZO film, can be reduced, and a high-effect field-effect thin film transistor can be manufactured.
  • FIG. 6 is a schematic configuration diagram of a sputtering apparatus for explaining an experiment conducted by the present inventors.
  • This sputtering apparatus includes two target portions T1 and T2, each having a target plate 11, a backing plate 12, and a magnet 13.
  • the backing plate 12 of each target unit T1 and T2 is connected to each electrode of the AC power source 14, respectively.
  • a target material having an In—Ga—Zn—O composition was used for the target plate 11.
  • a substrate having a silicon oxide film formed as a gate insulating film on the surface was disposed opposite to these target portions T1 and T2.
  • the distance (TS distance) between the target portion and the substrate was 260 mm.
  • the center of the substrate was set at the midpoint (point A) between the target portions T1 and T2.
  • the distance from this point A to the center (point B) of each target plate 11 is 100 mm.
  • Formed by introducing a predetermined flow rate of oxygen gas into the vacuum chamber maintained in a reduced pressure argon atmosphere (flow rate 230 sccm, partial pressure 0.74 Pa) and applying AC power (0.6 kW) between the target portions T1 and T2.
  • Each target plate 11 was sputtered with the plasma 15.
  • FIG. 7 shows the measurement results of the film thickness at each position on the substrate with point A as the origin.
  • the film thickness at each point was a relative ratio converted with the film thickness at the point A as 1.
  • the substrate temperature was room temperature.
  • the point C is a position 250 mm away from the point A, and the distance from the outer peripheral side of the magnet 13 of the target portion T2 is 82.5 mm.
  • ⁇ indicates the film thickness when the oxygen introduction amount is 1 sccm (partial pressure 0.004 Pa)
  • ⁇ indicates the film thickness when the oxygen introduction amount is 5 sccm (partial pressure 0.02 Pa)
  • ⁇ indicates The film thickness when the oxygen introduction amount is 25 sccm (partial pressure 0.08 Pa)
  • ⁇ indicates the film thickness when the oxygen introduction amount is 50 sccm (partial pressure 0.14 Pa).
  • the film thickness at the point A where the sputtered particles emitted from the two target portions T1 and T2 reach is the largest, and the film thickness decreases as the distance from the point A increases.
  • the point C is a deposition region of sputtered particles emitted in an oblique direction from the target portion T2, and thus has a smaller film thickness than the sputtered particle deposition region (point B) incident from the target portion T2 in the vertical direction.
  • the incident angle ⁇ of the sputtered particles at this point C was 72.39 ° as shown in FIG.
  • FIG. 9 is a diagram showing the relationship between the introduced partial pressure and the film formation rate measured at points A, B and C. It was confirmed that the film formation rate decreased as the oxygen partial pressure (oxygen introduction amount) increased regardless of the film formation position.
  • thin film transistors each having an active layer made of an IGZO film formed with different oxygen partial pressures were produced.
  • the active layer was annealed by heating each transistor sample in air at 200 ° C. for 15 minutes.
  • the on-current characteristic and the off-current characteristic were measured about each sample. The result is shown in FIG.
  • the vertical axis represents on-current or off-current
  • the horizontal axis represents oxygen partial pressure during the formation of the IGZO film.
  • the transistor characteristics of a sample in which an IGZO film is formed by a pass film formation method by RF sputtering are also shown.
  • ⁇ is the off current at point C
  • ⁇ is the on current at point C
  • ⁇ is the off current at point A
  • ⁇ is the on current at point A
  • ⁇ is the reference sample.
  • the off current, “ ⁇ ”, is the on current of the reference sample.
  • the on-current decreases as the oxygen partial pressure increases in each sample. This is presumably because the conductive properties of the active layer are lowered by the increase in the oxygen concentration in the film. Further, when the samples at point A and point C are compared, the sample at point A has a lower on-current than point C. This is thought to be due to the fact that the underlying film (gate insulating film) suffered significant damage due to collision with sputtered particles during the formation of the active layer (IGZO film), and the desired film quality of the underlying film could not be maintained. It is done. In addition, the sample at the point C had the same on-current characteristics as the reference sample.
  • FIG. 11 shows experimental results obtained by measuring the on-current characteristics and off-current characteristics of the thin film transistor when the annealing conditions of the active layer are 400 ° C. for 15 minutes in the atmosphere. Under this annealing condition, there was no difference in on-current characteristics for each sample. However, regarding the off-current characteristics, it was confirmed that the sample at point A was higher than the sample at point C and each sample for reference. This is presumably because the base film was greatly damaged by collision with the sputtered particles during the formation of the active layer, and the desired insulating properties were lost.
  • the active layer of the thin film transistor is formed by sputtering, the on-current is high and the off-current is low by forming the initial layer of the thin film with sputtered particles incident on the substrate from an oblique direction. Excellent transistor characteristics can be obtained.
  • an active layer having an In—Ga—Zn—O-based composition having desired transistor characteristics can be stably manufactured.
  • each magnet 83 of each of the target portions Tc1 to Tc5 is fixed to the target 81 (backing plate 82).
  • each magnet 83 may be arranged to be movable along the direction in which the target portions Tc1 to Tc5 are arranged.
  • sputtering is performed along the arrangement direction of each target portion from the most upstream target portion Tc1 to the most downstream target portion Tc5 when viewed from the substrate 10.
  • the target magnet 83 is moved in the arrangement direction. Thereby, it becomes possible to easily control the incident angle and the film forming region of the sputtered particles incident on the substrate 10 from an oblique direction.
  • the moving speed of the magnet 83 can be arbitrarily set according to the size of the target plate 81 and the magnet 83, the plasma formation range, and the like.
  • the method for manufacturing a thin film transistor using an IGZO film as an active layer has been described as an example.
  • the present invention can also be applied to the case where another film forming material such as a metal material is formed by sputtering. Applicable.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Thin Film Transistor (AREA)
  • Physical Vapour Deposition (AREA)
PCT/JP2009/005282 2008-10-16 2009-10-09 スパッタリング装置、薄膜形成方法及び電界効果型トランジスタの製造方法 WO2010044235A1 (ja)

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CN2009801407046A CN102187007A (zh) 2008-10-16 2009-10-09 溅射装置、薄膜形成方法和场效应晶体管的制造方法
US13/123,720 US20110198213A1 (en) 2008-10-16 2009-10-09 Sputtering Apparatus, Thin-Film Forming Method, and Manufacturing Method for a Field Effect Transistor
JP2010533814A JPWO2010044235A1 (ja) 2008-10-16 2009-10-09 スパッタリング装置、薄膜形成方法及び電界効果型トランジスタの製造方法
KR1020117005631A KR101279214B1 (ko) 2008-10-16 2009-10-09 스퍼터링 장치, 박막 형성 방법 및 전계 효과형 트랜지스터의 제조 방법

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JP2014114498A (ja) * 2012-12-12 2014-06-26 Ulvac Japan Ltd スパッタ装置

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CN103924201B (zh) * 2014-03-31 2016-03-30 京东方科技集团股份有限公司 磁控溅射设备
TWI686874B (zh) * 2014-12-26 2020-03-01 日商半導體能源研究所股份有限公司 半導體裝置、顯示裝置、顯示模組、電子裝置、氧化物及氧化物的製造方法

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TW201026870A (en) 2010-07-16
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US20110198213A1 (en) 2011-08-18
KR101279214B1 (ko) 2013-06-26

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