WO2010038859A1 - パターンマッチング方法、及び画像処理装置 - Google Patents

パターンマッチング方法、及び画像処理装置 Download PDF

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Publication number
WO2010038859A1
WO2010038859A1 PCT/JP2009/067226 JP2009067226W WO2010038859A1 WO 2010038859 A1 WO2010038859 A1 WO 2010038859A1 JP 2009067226 W JP2009067226 W JP 2009067226W WO 2010038859 A1 WO2010038859 A1 WO 2010038859A1
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WIPO (PCT)
Prior art keywords
pattern
image
template
pattern matching
matching
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English (en)
French (fr)
Japanese (ja)
Inventor
美道 佐藤
池田　光二
二大 笹嶋
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Hitachi High Tech Corp
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Hitachi High Technologies Corp
Hitachi High Tech Corp
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Priority to US13/122,151 priority Critical patent/US8953894B2/en
Publication of WO2010038859A1 publication Critical patent/WO2010038859A1/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T7/00—Image analysis
    • G06T7/70—Determining position or orientation of objects or cameras
    • G06T7/73—Determining position or orientation of objects or cameras using feature-based methods
    • G06T7/74—Determining position or orientation of objects or cameras using feature-based methods involving reference images or patches
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V20/00—Scenes; Scene-specific elements
    • G06V20/60—Type of objects
    • G06V20/69—Microscopic objects, e.g. biological cells or cellular parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical, image processing or photographic arrangements associated with the tube
    • H01J37/222—Image processing arrangements associated with the tube
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/10—Image acquisition modality
    • G06T2207/10056—Microscopic image
    • G06T2207/10061—Microscopic image from scanning electron microscope
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06T—IMAGE DATA PROCESSING OR GENERATION, IN GENERAL
    • G06T2207/00—Indexing scheme for image analysis or image enhancement
    • G06T2207/30—Subject of image; Context of image processing
    • G06T2207/30108—Industrial image inspection
    • G06T2207/30148—Semiconductor; IC; Wafer
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V2201/00—Indexing scheme relating to image or video recognition or understanding
    • G06V2201/12—Acquisition of 3D measurements of objects
    • G06V2201/122—Computational image acquisition in electron microscopy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24592—Inspection and quality control of devices

Definitions

  • the present invention relates to a pattern matching method and apparatus, and more particularly to a matching method for a pattern formed over a plurality of layers and an apparatus for executing the matching.
  • Thin film patterns to be formed on semiconductor wafers in the semiconductor device manufacturing process are becoming increasingly fine and highly integrated. In order to inspect whether these patterns are formed on the wafer as designed, accurate and high-speed The importance of process monitoring automation is increasing.
  • SEM scanning electron microscope
  • CD Cosmetic Dimension
  • the pattern matching method is a method in which a template representing a unique pattern formed on a sample is searched in a predetermined image area, and a portion having a high degree of coincidence with the template is specified. Since the relative positional relationship between the pattern specified by pattern matching and the pattern to be measured is known in advance, quick positioning to a fine measurement target pattern is possible.
  • the measurement object itself may be a matching pattern.
  • Patent Document 1 proposes a pattern matching apparatus for performing pattern matching using a hole pattern as a pattern matching target and a semiconductor pattern design data as a template.
  • pattern matching requires a corresponding degree of matching between the SEM image to be matched and the template.
  • the pattern extending over multiple layers, such as contact holes has a pattern shape expressed on the SEM image because the combined shape of the upper and lower portions is a pattern deformation compared to a planar pattern.
  • the lower portion of the hole pattern may be greatly deformed.
  • the electrons emitted from the bottom of the hole may be affected by the orbital due to charging or the like attached to the sample surface, and the yield of the detected secondary electrons may change.
  • Patent Document 1 describes an excellent technique as a pattern matching method using design data, but the problem to be solved is the deformation of the bottom of the hole pattern and the change in the detection efficiency of secondary electrons. Not proposed as.
  • a method and apparatus for performing first pattern matching on image information expressing a plurality of layers using a first template in which the shape of the pattern upper part is selectively expressed is proposed. To do.
  • a method and apparatus for subtracting information related to the shape of the upper part of the pattern from image information or shape information expressing the plurality of layers is provided.
  • pattern matching is a method for searching for a matching pattern part, but the size and shape of the pattern part may change. Therefore, the pattern matching needs to be performed on the assumption that the target pattern portion is deformed. If the positioning accuracy in pattern matching is insufficient, a correct measurement value cannot be obtained, and in the worst case, a completely wrong position may be measured.
  • the variation factors of the pattern also include a plurality of layers, and the variation of pattern deformation is a combination of pattern deformation in each layer.
  • deformation of the bottom surface of the contact hole may be larger than that of the contact hole surface.
  • a combination of such a variation in the deformation of the contact hole bottom surface and a variation in the deformation of the hole surface is a variation in the deformation of the SEM image of the contact hole expressed by combining the pattern surface and the bottom.
  • a pattern matching method for acquiring the second template from the SEM image on which the preliminary charging scan is performed is performed.
  • a pattern matching method for acquiring an SEM image in a state where preliminary charging scanning is performed when performing the second pattern matching is performed when performing the second pattern matching.
  • a pattern matching method for determining whether or not measurement can be performed according to the degree of overlap between the upper part and the lower part of a pattern in which parts constituting the pattern exist in a plurality of layers (heights).
  • a pattern matching method in which a subsequent measurement method or the like is set in accordance with the degree of overlap between the upper part and the lower part of a pattern in which parts constituting the pattern exist in a plurality of layers (heights).
  • the shape of each layer can be extracted even if the size and shape of the pattern and the overlapping method vary, and the measurement position accuracy is improved. be able to. In addition, it is possible to select and set how measurement processing and status reports should be performed due to large variations in the overlapping method.
  • FIG. 4 is a diagram for explaining the outline of an SEM that is one type of charged particle beam apparatus.
  • the SEM described in this embodiment mainly includes a scanning electron microscope main body 401, a control unit 402, a host (processor) 407, a screen display device 409, and a mouse (pointing device) 410, which are connected as shown in the figure. Has been.
  • the control unit 402 includes an image processing unit B403, an imaging control unit 404, a stage control unit 405, and a vacuum control unit 406, and programs for performing control by these control units are registered.
  • the imaging control unit 404 performs control for obtaining an SEM image from the scanning electron microscope main body 401.
  • the stage control unit 405 controls the movement of the stage (sample stage) in the scanning electron microscope main body 401.
  • the vacuum control unit 406 controls the exhaust vacuum pump in the scanning electron microscope main body 401.
  • the image processing unit B403 is for inputting and processing an SEM image from the imaging control unit 404.
  • the host 407 has an image processing unit A408.
  • Image processing with many steps to be confirmed by the operator is mainly performed by the image processing unit A (408), and image processing that needs to be performed continuously at high speed is mainly performed by the image processing unit B403. This is because it takes time to transfer image information between the control unit 402 and the host 407.
  • the processing for registering a template used for pattern matching described below is executed by the image processing unit A408 of the host 407.
  • the SEM image is transferred from the control unit or saved in a storage device in the host.
  • the design data is stored in a storage device in the host.
  • the screen is output to the screen display device 409, and the operator performs an arbitrary operation on the screen using the mouse 410.
  • the matching processing and shape extraction processing described below are similarly executed by the image processing unit A408 of the host 407. However, if it is considered that the processing capacity of the host processor or the image transfer rate from the control unit is low, the processing is executed by the image processing unit B403 as necessary.
  • the measurement position accuracy can be improved by applying the following algorithm if it is intended to perform automatic measurement based on image information, not limited to a microscope apparatus. Further, the following algorithm can be used in an environment where images can be processed without being connected to a device that actually acquires images.
  • FIG. 5 is a diagram for explaining an example of the template matching process.
  • the obtained SEM image is subjected to edge enhancement processing, binarization processing, and then matching processing.
  • FIG. 6 is a diagram for explaining another example of the template matching process.
  • the edge extraction process is performed on the template and the SEM image, and then the smoothing process (smoothing) is performed.
  • the smoothing process smoothing
  • the method is effective because the shape difference between the edges of the template and the SEM image is large. Note that the processing examples shown in FIGS. 5 and 6 are merely examples, and other various pattern matching methods can be applied.
  • FIG. 1 is a diagram for explaining an example of pattern matching using a template and a shape extraction process of a lower layer pattern.
  • the object of the present embodiment is to recognize and measure a deep pattern that appears as a lower layer in a round hole semiconductor pattern (hole pattern).
  • the depth that appears as the lower layer is particularly fluctuating in shape, size, and position.
  • the process shown in FIG. 1 relates to a technique for performing alignment by template matching stably even if the shape of the contact hole bottom (or intermediate layer) is largely deformed.
  • the template may be formed based on an actual SEM image, or may be formed based on semiconductor device design data.
  • an image 101 in which both the hole bottom (pattern lower part) and the hole surface (pattern upper part) are displayed on the image and an image 102 in which the hole surface is selectively displayed are prepared.
  • the image 101 is an image acquired in a state where the sample surface is positively charged
  • the image 102 is an image acquired in a state where the sample surface is not positively charged.
  • One technique for positively charging the sample surface is a pre-dose technique.
  • Pre-dose is a pre-charging method in which beam scanning is performed to charge a sample surface before acquiring an image for measurement or inspection. More specifically, a secondary electron generation efficiency (electrons emitted from the sample / electrons incident on the sample) ⁇ exceeding 1 (that is, more electrons are emitted than electrons incident on the sample) By scanning above, the sample surface is positively charged.
  • the image 101 is an image acquired as described above.
  • the image 102 is an image formed as a result of performing beam scanning for image formation in a state where electrons emitted from the bottom of the hole do not rise above the sample surface.
  • the charge is formed for some reason, or if the hole depth is shallow and the electrons emitted from the bottom of the hole are guided to the sample surface without forming the charge.
  • the image is acquired after scanning the sample with a beam that forms a negative charge opposite to the positive charge (for example, a beam whose secondary electron generation efficiency is less than 1), an image that selectively represents the hole surface is acquired. can do.
  • the upper template 104 that selectively represents the upper part of the pattern and the lower template 109 that selectively represents the lower part of the pattern are formed.
  • the upper template 104 is formed by selecting an image that is a part or all of the image 102 and that shows the outline of the upper part of the hole.
  • the information on the bottom of the hole may be a cause of hindering the matching degree determination in the matching. Therefore, when the bottom of the hole is displayed on the image, a mask for the bottom of the hole is used. Apply or process to selectively lose the information corresponding to the bottom of the hole.
  • only the image portion expressing the upper part of the hole may be selectively applied to the matching degree calculation algorithm.
  • the lower template 109 is formed by selecting a portion in which the bottom of the pattern is expressed in the image 101 (excluding the portion in which the upper portion of the pattern appears from the image data).
  • the design data is stored without performing preliminary charging because information on the upper and lower portions of the pattern is stored in the design data 103 in advance.
  • Necessary information can be extracted from the GDS file and the two-dimensional image of the information can be applied in place of the image 101, the image 102, the upper template 104, and the lower template 109.
  • matching processing is performed as follows.
  • pattern matching of only the upper layer is performed using the upper template 104, and the position and shape are extracted.
  • the shape information 106 of the upper layer pattern is obtained by performing pattern matching using the upper template 104 on the image 105 and selectively extracting the upper layer pattern.
  • pattern matching of only the upper layer is performed by masking the inside of the pattern, or by selectively processing a portion whose shape or edge feature matches the upper template as a target for matching. This can be done without being subject to variations in the pattern.
  • the multilayer shape information 107 indicates a state in which the shape of another layer is detected within a range specified by the upper template 104 (for example, an area having the same size as the upper template 104). In this way, by limiting the detection range to the region specified by the upper template, it is possible to prevent the position from being mistaken and to reduce the processing speed.
  • the shape information 108 of the lower layer pattern is extracted. This process is achieved by subtracting the shape information 106 of the upper layer pattern from the multilayer shape information 107.
  • the lower template 109 may be prepared to extract a portion having a matching feature, but only when the fluctuation is not so large.
  • the lower template 109 can be prepared by designating and extracting from the image 101 or the design data 103.
  • the measurement position will not be mistaken even when the shape, size, and position vary greatly.
  • FIG. 7 is a flowchart for explaining another processing example of the above-described two-stage matching.
  • a pattern search is performed using the upper layer pattern template 702 (step (a)). Since the position of the upper layer pattern 703 is specified by step (a), the search range for extracting the lower layer pattern is determined based on the position information (step (b)).
  • step (b) a region narrower than the upper layer pattern search region 701 is set as a lower layer pattern search region 704 using the position information of the upper layer pattern.
  • the size of the search area of the lower layer pattern can be arbitrarily set, but is preferably an area narrower than the upper layer pattern search area 701 and larger than the lower layer pattern template 705 prepared for the lower layer pattern. .
  • pre-dose by electron beam scanning is performed on the upper layer pattern region surrounding the lower layer pattern 706 (step (c)).
  • Pre-dose is a technology that draws electrons emitted from the bottom (lower layer) of the deep hole by positively charging the sample surface (upper layer), so that the electron beam is directed against the sample surface region surrounding the bottom of the deep hole. Need to be scanned.
  • the image of the lower layer pattern search region 704 is an image in which the lower layer pattern 706 is emphasized.
  • a pattern search is performed using the lower layer pattern template 705 in the lower layer pattern search region 704 in which the lower layer pattern is emphasized as described above (step (e)), and the position of the lower layer pattern is specified (step (f) )).
  • the edge portion 707 of the upper layer pattern displayed in the lower layer pattern template can be further deleted by image processing as necessary, thereby further increasing the matching success rate.
  • the pre-dose process is not always necessary.
  • the matching process can be performed based on the image in which the upper layer and the lower layer are emphasized, so that it is possible to realize a highly accurate matching process. .
  • FIG. 2 is a diagram for explaining another example of pattern matching using a template.
  • the process example illustrated in FIG. 2 is also substantially the same as that of the first embodiment.
  • the image 105 obtained by imaging the inspection target to be measured has similar features in the upper and lower layers and is distinguished. It is assumed that matching with the upper template 104 is difficult if the upper layer 104 is difficult to change or if the upper layer has a large variation and information on upper and lower layers is mixed.
  • the image information 201 is obtained by imaging a pattern of only the upper layer to be inspected for measurement. Using this image information 201, matching with the upper template 104 is performed, and position detection and shape extraction are performed. Then, the shape extraction of all layers is performed using the separately acquired image 105. In the case of this example, upper layer and lower layer shape extraction is performed, and multilayer shape information 107 is obtained. The shape information 108 of the lower layer pattern is extracted by subtracting the shape information 106 of the upper layer pattern from the multilayer shape information 107.
  • the following describes an example of error handling when the lower layer of the contact hole pattern is automatically measured.
  • automatic measurement of a pattern is performed in a CD-SEM
  • the measurement object is different from the measurement object if the measurement is performed with the information present even though the predetermined information is not obtained on the image. Nevertheless, measurement will be performed, and the reliability of the measurement result may be reduced.
  • a description will be given of a method and apparatus that can selectively extract only highly reliable information by terminating a warning or measurement when predetermined information is not obtained.
  • FIG. 3 is a diagram for explaining a correspondence example when changing the measurement process depending on the type of the obtained image.
  • Case A301 is a case in which the bottom pattern seen as the lower layer was seen without overlapping the upper layer.
  • the position to be measured (arrow in the figure) can be uniquely determined. In this case, there is no particular problem and measurement is possible. Therefore, the normal measurement of the lower layer pattern is executed.
  • Case B302 is a case in which the bottom pattern seen as the lower layer is in contact with or overlapped with the upper layer.
  • the measurement is between the upper layer and the lower layer.
  • setting 1 is selected.
  • setting 2 is generated to generate error information and end the measurement operation.
  • Case C303 is a case where the bottom pattern should not be seen at all, which should be seen as a lower layer.
  • the user can select whether to output the measured value zero and generate a warning (setting 1) or to generate error information and end the measurement operation (setting 2). It is possible to obtain a measurement result in line with
  • the accuracy may be improved by using the information of the template that is automatically displayed first (the learning is performed) based on information registered in the past. Further, in changing the effective position of the template, an arbitrary position may be designated instead of a preset preset. Furthermore, likelihood may be given to the similar positional relationship in the similar structure pattern matching so that the deformation of the measurement object can be handled robustly. Further, the likelihood may be set by the operator as a parameter. While the above description has been made with reference to exemplary embodiments, it will be apparent to those skilled in the art that the invention is not limited thereto and that various changes and modifications can be made within the spirit of the invention and the scope of the appended claims.

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PCT/JP2009/067226 2008-10-03 2009-10-02 パターンマッチング方法、及び画像処理装置 Ceased WO2010038859A1 (ja)

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