WO2010030102A3 - 열응력 감소를 위한 버퍼층을 포함하는 정전 척 - Google Patents

열응력 감소를 위한 버퍼층을 포함하는 정전 척 Download PDF

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Publication number
WO2010030102A3
WO2010030102A3 PCT/KR2009/005070 KR2009005070W WO2010030102A3 WO 2010030102 A3 WO2010030102 A3 WO 2010030102A3 KR 2009005070 W KR2009005070 W KR 2009005070W WO 2010030102 A3 WO2010030102 A3 WO 2010030102A3
Authority
WO
WIPO (PCT)
Prior art keywords
thermal stress
buffer layer
electrostatic chuck
main body
dbl
Prior art date
Application number
PCT/KR2009/005070
Other languages
English (en)
French (fr)
Other versions
WO2010030102A2 (ko
Inventor
최진식
최정덕
Original Assignee
주식회사 코미코
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 코미코 filed Critical 주식회사 코미코
Priority to CN200980135897.6A priority Critical patent/CN102150233B/zh
Publication of WO2010030102A2 publication Critical patent/WO2010030102A2/ko
Publication of WO2010030102A3 publication Critical patent/WO2010030102A3/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

열응력을 흡수하는 버퍼층을 포함하는 정전 척이 개시된다. 정전 척은 관통 홀을 구비하는 바디부, 상기 바디부의 상부에 배치되고 상기 관통 홀에 대응하는 삽입 홀 및 상기 삽입 홀을 통하여 부분적으로 노출되는 전극을 포함하여 상기 전극의 정전기력에 의해 대상체를 고정하는 기저부, 상기 관통 홀 및 삽입 홀을 통하여 상기 전극과 연결되는 접속단자를 구비하는 단자부 및 상기 접속단자와 상기 바디부 및 상기 기저부의 적어도 하나와의 경계면에 배치되어 상기 바디부의 열응력을 흡수할 수 있는 버퍼층을 포함한다. 본 발명에 따르면, 정전 척에 포함되는 버퍼층에 의해 열응력이 흡수됨으로써 열응력으로 인한 크랙 발생이 최소화되고 이에 따라 정전 척의 수명이 연장된다.
PCT/KR2009/005070 2008-09-09 2009-09-08 열응력 감소를 위한 버퍼층을 포함하는 정전 척 WO2010030102A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN200980135897.6A CN102150233B (zh) 2008-09-09 2009-09-08 包含有用于减小热应力的缓冲层的静电吸盘

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080088972A KR100995250B1 (ko) 2008-09-09 2008-09-09 열 응력 감소를 위한 버퍼층을 포함하는 정전 척
KR10-2008-0088972 2008-09-09

Publications (2)

Publication Number Publication Date
WO2010030102A2 WO2010030102A2 (ko) 2010-03-18
WO2010030102A3 true WO2010030102A3 (ko) 2010-07-01

Family

ID=42005613

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/005070 WO2010030102A2 (ko) 2008-09-09 2009-09-08 열응력 감소를 위한 버퍼층을 포함하는 정전 척

Country Status (4)

Country Link
KR (1) KR100995250B1 (ko)
CN (2) CN102150233B (ko)
TW (1) TWI401768B (ko)
WO (1) WO2010030102A2 (ko)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102610476B (zh) * 2012-03-12 2015-05-27 中微半导体设备(上海)有限公司 一种静电吸盘
KR101974386B1 (ko) * 2012-03-21 2019-05-03 주식회사 미코 정전척
KR102119867B1 (ko) * 2013-10-21 2020-06-09 주식회사 미코세라믹스 정전척
US11420278B2 (en) * 2018-06-28 2022-08-23 Spirit Aerosystems, Inc. System and method employing active thermal buffer element for improved joule heating
JP7162500B2 (ja) * 2018-11-09 2022-10-28 株式会社Kelk 温調装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030044499A (ko) * 2001-11-30 2003-06-09 삼성전자주식회사 정전척 및 이의 제조방법
KR20070093583A (ko) * 2006-03-14 2007-09-19 주식회사 에이디피엔지니어링 정전척, 기판 지지대, 챔버 및 그 제조 방법
US20080174930A1 (en) * 2006-09-13 2008-07-24 Ngk Insulators, Ltd. Electrostatic chuck with heater and manufacturing method thereof

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0899986B1 (en) * 1996-05-05 2004-11-24 Tateho Chemical Industries Co., Ltd. Electric heating element and electrostatic chuck using the same
JP4173212B2 (ja) * 1997-10-08 2008-10-29 東京エレクトロン株式会社 保持装置及び保持装置を装着した処理装置
JP3771722B2 (ja) * 1998-07-31 2006-04-26 京セラ株式会社 ウエハ支持部材
DE60045384D1 (de) * 1999-09-29 2011-01-27 Tokyo Electron Ltd Mehrzonenwiderstandsheizung
JP3859914B2 (ja) * 1999-10-08 2006-12-20 東芝セラミックス株式会社 金属端子を有するセラミック−金属複合部品、及びその製造方法
JP2001287130A (ja) * 2000-04-07 2001-10-16 Taiheiyo Cement Corp 静電チャック装置及びその製造方法
JP2001313331A (ja) * 2000-04-28 2001-11-09 Sumitomo Osaka Cement Co Ltd 静電吸着装置
JP4753460B2 (ja) * 2000-08-16 2011-08-24 株式会社クリエイティブ テクノロジー 静電チャック及びその製造方法
US7161121B1 (en) * 2001-04-30 2007-01-09 Lam Research Corporation Electrostatic chuck having radial temperature control capability
JP4510745B2 (ja) * 2005-10-28 2010-07-28 日本碍子株式会社 セラミックス基材と電力供給用コネクタの接合構造
KR101042782B1 (ko) * 2006-09-19 2011-06-20 가부시키가이샤 크리에이티브 테크놀러지 정전 척의 급전구조 및 그 제조방법 및 정전 척 급전구조의 재생방법

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20030044499A (ko) * 2001-11-30 2003-06-09 삼성전자주식회사 정전척 및 이의 제조방법
KR20070093583A (ko) * 2006-03-14 2007-09-19 주식회사 에이디피엔지니어링 정전척, 기판 지지대, 챔버 및 그 제조 방법
US20080174930A1 (en) * 2006-09-13 2008-07-24 Ngk Insulators, Ltd. Electrostatic chuck with heater and manufacturing method thereof

Also Published As

Publication number Publication date
KR100995250B1 (ko) 2010-11-18
TWI401768B (zh) 2013-07-11
CN102150233A (zh) 2011-08-10
WO2010030102A2 (ko) 2010-03-18
CN103227138A (zh) 2013-07-31
TW201021154A (en) 2010-06-01
CN102150233B (zh) 2014-10-15
KR20100030168A (ko) 2010-03-18

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