WO2010023992A1 - Dispositif émetteur de lumière et son procédé de fabrication - Google Patents

Dispositif émetteur de lumière et son procédé de fabrication Download PDF

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Publication number
WO2010023992A1
WO2010023992A1 PCT/JP2009/058090 JP2009058090W WO2010023992A1 WO 2010023992 A1 WO2010023992 A1 WO 2010023992A1 JP 2009058090 W JP2009058090 W JP 2009058090W WO 2010023992 A1 WO2010023992 A1 WO 2010023992A1
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WIPO (PCT)
Prior art keywords
light
frame
emitting device
phosphor
emitting element
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PCT/JP2009/058090
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English (en)
Japanese (ja)
Inventor
菊池節夫
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富士高分子工業株式会社
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Priority to JP2010526590A priority Critical patent/JPWO2010023992A1/ja
Publication of WO2010023992A1 publication Critical patent/WO2010023992A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Definitions

  • the present invention relates to a light emitting device in which a semiconductor light emitting element is covered with a resinous frame-like structure containing a phosphor, and a method for manufacturing the same.
  • Many conventional light emitting devices have a structure in which a light emitting element is arranged on a substrate and the periphery of the light emitting element is covered with a sealing resin containing a phosphor.
  • a technique is adopted in which a phosphor is excited by light emitted from a light emitting element to generate light having a different wavelength by generating light having a different wavelength.
  • the phosphor is mixed with a translucent resin, and is hardened after filling, coating, or coating around the light emitting element.
  • Various manufacturing methods such as the potting method of Patent Document 1, the dipping method of Patent Document 2, the screen printing method of Patent Document 3, the method of Patent Document 4, and the mold forming method of Patent Document 5 have been proposed.
  • FIG. 4A is a schematic cross-sectional view showing a conventional resin-sealed formation method disclosed in Patent Document 1 below.
  • a light emitting element 102 is mounted on an electrode 109 on a substrate 101, and is further covered with a covering material including a phosphor 103.
  • the covering material 104 including the phosphor 103 is discharged through the thin tube 107 of the dropping device 108 and dropped into the cavity 106, and then the covering material 104 is cured. It is covered with the covering material 104 containing.
  • the method of dropping the potting material in which the phosphor 103 is mixed in advance with the coating material 104 is shaped by the surface tension and viscosity of the coating material when the coating material is solidified. Due to the deformation, not only the dimensional accuracy is not good, but also the shape instability on the wall surface or the liquid level as shown in FIG. 4B, or the manufacturing process may be inclined as shown in FIG. 4C. In either case, the thickness of the covering material 104 covering the light emitting element changes, which leads directly to a product defect.
  • the phosphors in the coating material have different specific gravities. Therefore, the phosphors are precipitated at the beginning in the syringe, resulting in an imbalance in the phosphor concentration in the potting material composition.
  • the phosphor 103 contained in the coating material 104 in the syringe 108 settles with time and is present in the vicinity of the narrow tube 107. On the other hand, it becomes lean above the syringe.
  • the phosphor concentration in the coating material is as set at the beginning of the discharge operation, it gradually changes as the production time elapses, and on the contrary, it becomes further dilute after a certain stage.
  • Sedimentation of the phosphor also occurs in the cavity 106 after dripping and before curing. Therefore, not only the phosphor is not uniformly coated around the light emitter, but also the light emission variation of each final product becomes very large. The light-emitting device thus produced is particularly problematic when the light distribution chromaticity is not uniform due to the unevenness of the phosphor amount.
  • a screen printing method as shown in FIGS. 5A and 5B is known as means for suppressing variations in coating thickness of a coating material containing a phosphor (Patent Document 3).
  • the periphery of the light emitting element 201 mounted on the light emitting device 200 is covered with a coating layer 207 containing a phosphor 202.
  • the covering material 203 containing the phosphor 202 is supplied to the upper surface of the screen metal mask 204 having the cavity 206 opened in a predetermined shape, and is further filled in the cavity 206 while being extended by the squeegee 205.
  • the covering material thus filled is cured, and the covering layer 207 can be formed around the light emitting element 201 with a predetermined thickness.
  • the mold molding method can increase the accuracy of thickness, position, dimensions, concentration, etc., compared to other means.
  • 6A to 6C are schematic views showing a coating method by transfer molding (Patent Document 5).
  • the transfer molding die 300 has a three-sheet structure.
  • the lower mold 301 is provided with a cavity 302 into which a substrate is inserted.
  • a cavity 304 for molding a coating layer is provided below the middle mold 303.
  • a pot 306 for charging material is provided on the upper side of the middle mold, and the upper mold 305 has a structure in which the material charged in the pot 306 is injected under pressure.
  • the substrate 311 on which the light emitting element 310 is mounted is stored in the cavity 302 of the lower mold 301.
  • the covering material 313 including the phosphor 312 is charged in an appropriate amount in the pot 306 on the upper side of the middle mold 303.
  • the coating material 313 is injected from the injection port 314 through the runner 315 and into the cavity 304 through the gate 316. The pressure is maintained at an appropriate time and temperature to cure the coating material and then remove from the mold.
  • this method generates a lot of scrap material in parts other than the product such as the inlet, runner, and pot. Since the phosphor is extremely expensive, there is a big problem from an economical point of view. Further, this method has a problem that there is a limit to molding a large amount in a short time.
  • the present invention provides a light-emitting device with high uniformity of a phosphor layer and high productivity, and a method for manufacturing the same.
  • the light-emitting device of the present invention is a light-emitting device in which a semiconductor light-emitting element is mounted on a substrate, and the light-emitting element is covered with a resin frame-like structure containing a phosphor, and the light-emitting element and the frame-like structure The space with the body is filled with a translucent resin material.
  • a method for manufacturing a light emitting device is a method for manufacturing a light emitting device in which a semiconductor light emitting element is mounted on a substrate, and after the light emitting element is mounted on a substrate, a resin frame-like structure containing a phosphor The light emitting element is covered, and a space between the light emitting element and the frame structure is filled with a translucent resin material.
  • a phosphor containing a phosphor formed in a predetermined size and concentration in advance is disposed on a semiconductor light emitting device on a substrate, so that a phosphor layer with high uniformity and a mass-productive device can be obtained.
  • a high light-emitting element can be obtained.
  • the phosphor composition is a frame-like structure that is already molded into a predetermined shape, the light emission that realizes the desired light emission characteristics without changing the size and concentration during processing. An element can be provided.
  • the light distribution chromaticity for each product becomes uniform, there is no need for selection and selection in the final product as in the conventional method, so that the reduction in man-hours and the yield can be satisfactorily suppressed.
  • the translucent resin in which the phosphor is blended is formed in the structure in advance, it is possible to obtain much improved dimensional accuracy compared to other manufacturing methods formed on the substrate. As a result, not only the quality of the product but also the function is improved, so that an optical design with a high degree of difficulty can be achieved.
  • the space filled with the translucent resin is formed by a structure, the manufacturing cost can be suppressed and the design can be easily changed as compared with the conventional method.
  • FIG. 1A is a cross-sectional view schematically showing the light emitting device in the first embodiment of the present invention
  • FIG. 1B is a plan view thereof.
  • 2A to 2C are cross-sectional views illustrating steps for manufacturing the light emitting device according to the first embodiment of the present invention.
  • 3A to 3I are cross-sectional views showing steps of manufacturing a light emitting device according to the second embodiment of the present invention.
  • 4A to 4C are cross-sectional views illustrating a conventional method of coating a light emitting element by potting.
  • 5A and 5B are cross-sectional views illustrating a conventional method for coating a light emitting element by screen printing.
  • 6A to 6C are cross-sectional views showing a conventional method of coating a light emitting element by mold molding.
  • the light-emitting device of the present invention includes a semiconductor light-emitting element mounted on a substrate, covered with a resin-made frame-like structure containing a phosphor on the outside thereof, and light-transmitting in the space between the light-emitting element and the frame-like structure. Filled with resin material.
  • the resin-like frame-like structure containing the phosphor preferably contains an organic and / or inorganic phosphor and a light scattering agent.
  • the resin and / or the translucent resin material constituting the frame-like structure is silicone rubber or gel.
  • Silicone rubber or gel has the advantage of high heat resistance. Furthermore, the strain at the time of curing of the translucent resin material is absorbed by the frame structure of silicone rubber or gel, so that a uniform filling layer can be formed.
  • a lens is further arranged outside the frame-like structure. Thereby, the directivity of light can be controlled.
  • silicone rubber or resin is preferable.
  • the frame-like structure is formed in advance so as to cover the light emitting element.
  • a frame-like structure that contains a phosphor in a predetermined concentration and is molded into a predetermined shape is disposed in the vicinity of the light-emitting element on the substrate. And filling the space formed by the structure with a translucent resin and then curing it.
  • the phosphor may be blended with a translucent resin that fills the space of the frame-like structure containing the phosphor.
  • FIG. 1A is a sectional view schematically showing a semiconductor light emitting device according to the present embodiment
  • FIG. 1B is a plan view thereof
  • FIGS. 2A to 2C are sectional views showing manufacturing steps of the embodiment.
  • a lead electrode 402 having a predetermined conductive circuit is formed on the substrate 401 of the light emitting device 400.
  • a light emitting element 403 is disposed on the substrate 401 or the lead electrode 402, and the surface of the light emitting element 403 and the lead electrode 402 are electrically connected by a thin metal wire 404.
  • a frame-shaped structure 405 containing a phosphor 408 is disposed around the light-emitting element 403, and a space formed by the frame-shaped structure 405, the light-emitting element 403, and the substrate 401 is filled with a light-transmitting resin 406.
  • a lens-shaped structure 407 is attached to the exterior.
  • the light emitting element 403 is mounted on the substrate 401 using, for example, a die bonder machine, and the lead electrode 402 on the substrate is connected by wire bonding with a fine metal wire 404.
  • the material of the substrate 401 is not limited, but a printed substrate such as glass epoxy, polyimide, epoxy resin-impregnated aramid nonwoven fabric, or ceramic can be used favorably. Since recent light emitting devices generate more heat and require more effective heat dissipation, ceramic substrates using ceramic substrates, metal substrates typified by aluminum substrates, substrates using metal oxides such as alumina, etc. It is desirable to use it, but it is not limited to this.
  • the type of the light emitting element 403 is not particularly limited.
  • a semiconductor layer made of a group III nitride compound that is, a GaN-based, AlGaN-based, InGaN-based, InAlGa-based, or the like is stacked on an element substrate formed of sapphire.
  • SiC, GaP, or the like can be used for the element substrate, but the element substrate is not limited thereto.
  • the wavelength emitted by the light emitting element 403 varies from the ultraviolet region to the visible region, but is arbitrarily selected according to the purpose. For example, a desired emission color such as blue, red, or green is selected. A plurality of similar light emitting elements can be used. In addition, various light emission colors can be obtained by combining light-emitting elements having different light emission colors.
  • the dimensions of the substrate and the light emitting element are not particularly limited. Further, the dimensions of the frame-like structure are also set by the dimensions and quantity of the light emitting elements mounted on the substrate.
  • the space formed by the periphery of the inner surface of the frame-like structure and the inner surface of the top plate (the portion of the filler 406 in FIG. 1) is less than the light emitting element to the extent that it does not interfere with the thin metal wires 404 coupled to the light emitting element. It needs to be bigger. Preferably, it is about 0.2 to 1.0 mm larger than the outer periphery of the light emitting element.
  • the thickness of the frame-like structure is preferably 0.2 to 2.0 mm as adjusted by the blending amount of phosphor and the emission color. When the thickness is less than 0.2 mm, it is difficult to maintain the shape, and when the thickness exceeds 2.0 mm, the light emission efficiency tends to deteriorate.
  • the height is preferably 0.5 to 3 mm.
  • the shape of the frame-shaped structure is preferably a bowl to uniformly cover the periphery of a single light emitting element, but when simultaneously covering a plurality of light emitting elements, an appropriate shape is selected depending on the arrangement of the light emitting elements, A circle, a polygon, an ellipse, etc. may be sufficient. Further, depending on the optical design, a hemispherical or aspherical lens shape may be used.
  • the shape of the lenticular structure is adjusted by the directivity of light emitted from the desired light emitting device. Depending on the purpose of light collection, diffusion, etc., any shape such as concave, convex, Fresnel, spherical, aspherical surface is used.
  • a plurality of lenses having a diameter substantially equal to that of the light emitting elements may be provided for each individual light emitting element, or the plurality of light emitting elements may be simultaneously covered with a single lens.
  • an electrode 402 for mounting and connecting a light emitting element 403 and a thin metal wire 404 for connecting a light emitting device are formed on a substrate 401.
  • a good electrical conductor such as copper, phosphor bronze, iron or nickel is used, and the surface can be plated with a noble metal such as gold, silver, platinum or palladium.
  • the light emitting element 403 needs to be covered with a phosphor.
  • a frame-like structure 405 in which a covering material 410 containing a phosphor 408 is molded in advance is disposed in the vicinity of the light emitting element 403.
  • a filler 406 is filled into the space 411 formed by the frame-shaped structure 405, the light emitting element 403, and the substrate 401 from the injection port 409.
  • the phosphor 408 is selected according to the emission color emitted from the light emitting element 403 and the desired emission color of the light emitting device.
  • white light can be obtained by mixing light emitted from a phosphor that emits light having a peak wavelength of about 0.57 ⁇ m and a blue light-emitting element having a peak wavelength of about 0.45 ⁇ m.
  • the kind and amount of the phosphor 408 are not particularly limited, and a particulate phosphor can be used regardless of whether it is organic or inorganic.
  • a particulate phosphor can be used regardless of whether it is organic or inorganic.
  • Red, blue, yellow, and green light are selected from a combination of one or more.
  • the amount of the phosphor blended in the coating material is adjusted according to the desired emission color. As an example, the phosphor is added in the range of 5 to 20% by mass with respect to 100% by mass of the coating material.
  • an appropriate amount of light scattering material can be blended with the frame structure 405 for the purpose of adjusting directivity.
  • the light scattering material include titanium oxide, aluminum oxide, and silicon oxide.
  • the covering material 410 constituting the frame-like structure 405, the filler 406 filled in the space 411 formed by the frame-like structure 405 and the light emitting element 403, and the substrate 401, and a resinous composition having translucency are selected.
  • the translucent resin material refers to a resin having a transmittance of 90% or more when light having a wavelength of 580 nm is transmitted through a sheet or plate having a thickness of 2 mm.
  • This resinous composition can be selected from thermoplastic and thermosetting, and acrylic, polycarbonate, urethane, methacrylic acid, methacrylic acid ester, silicone and the like can be used. Moreover, not only resin but rubber
  • a silicone type is desirable because of its excellent light transmittance and heat resistance as well as resistance to ultraviolet rays. Moreover, from the point of relieving stress due to temperature change, it is desirable that the property after curing is rubber or gel. Further, the covering material 410 constituting the frame-like structure 405 and the filler 406 filling the space 411 formed by the frame-like structure 405, the light emitting element 403, and the substrate 401 are not necessarily the same.
  • the frame structure 405 is formed by compression molding. Compression molding produces less molding scrap than transfer molding and injection molding, and many molded products can be obtained at one time. In addition, it may be a method obtained by rolling into a sheet and punching or cutting, or a method obtained by slicing an extruded product. Moreover, you may shape
  • the frame-like structure 405 is preferably fixed to the substrate 401 with a silicone pressure adhesive.
  • a silicone pressure adhesive may be affixed with another adhesive or the like, or the tackiness of the original frame structure material may be used.
  • it may be integrally molded directly on the substrate.
  • the filling material 406 is filled by a syringe as an example, but a known conventional technique such as potting, screen printing, knife coating, etc. may be used depending on the shape of the frame structure.
  • a lens-like structure 407 can be installed in order to further control the directivity.
  • the lenticular structure 407 is preferably molded from silicone rubber or silicone resin.
  • the lenticular structure 407 can be directly molded on the substrate 401.
  • a lens-like structure obtained in advance by conventional mold molding such as compression, transfer, and injection may be pasted on the substrate with an adhesive, adhesive, etc., or a mechanical fitting structure, etc. It may be fixed with.
  • the property of the lens-like structure 407 may be glass, resin, or rubber, but it is desirable that the lens-like structure 407 be made of a silicone material in view of excellent light transmittance, heat resistance, and resistance to ultraviolet rays.
  • the frame-like structure is obtained by extruding the covering material 602 containing the phosphor 601 by the extrusion molding machine 600.
  • the covering material 602 is filled in a cylinder of the extrusion molding machine 600, and is further pressurized by rotating a screw.
  • the pressurized covering material 602 is extruded from the base 603 (FIG. 3A), and then heated and cured to obtain a tubular molded product 607 (FIG. 3B).
  • Extrusion molding can not only be completed in a short time, but also the coating material 602 is constantly stirred by the rotation of the screw, so that a tube-shaped molded product 607 containing a phosphor is uniformly obtained continuously.
  • the base 603 by changing the base 603, it can be made into an arbitrary shape such as a ring shape, a polygonal shape, an elliptical shape.
  • the tubular molded product 607 is continuously cut by the slicing blade 604 at equal intervals from the end face (FIG. 3C-E).
  • a frame-like structure 501 having an arbitrary shape can be obtained (FIG. 3F).
  • the top plate is not formed.
  • a space 502 can be formed by the frame-like structure 501, the light-emitting element 503, and the substrate 504 (FIG. 3G).
  • the filler 505 is filled while being extended by a squeegee 507 through a screen plate 506 having a predetermined shape.
  • the filler contains a phosphor 508 for adjusting the function and characteristics of the light emitting device (FIG. 3H). In this way, the light emitting device 509 of this embodiment is obtained (FIG. 3I).
  • Example 1 A product name “YR450” (yellow phosphor) manufactured by Intermatix was uniformly mixed with 10% by mass of silicone rubber “FSG3161K2C” manufactured by Fuji Polymer Industries Co., Ltd. This blend was compression-molded at 150 ° C. for 5 minutes using a compression mold to obtain a rectangular parallelepiped frame-like structure having one surface (bottom surface) opened.
  • the inner dimensions were 4 mm in length, 4 mm in width, 1 mm in height, and the outer dimensions were 4.75 mm in length, 4.75 mm in width, and 1.75 mm in height.
  • the thickness (coating thickness) of the frame-shaped structure was 0.75 mm.
  • a through hole having a diameter of 0.3 mm was provided on one of the four sides of the outer periphery.
  • the frame-like structure is arranged in the center.
  • thermosetting silicone, OE-6351 product name, manufactured by Toray Dow Corning Co., Ltd.
  • a hemispherical lens-like structure having a sphere radius of R8 mm was directly molded on the substrate using a transfer mold.
  • the material was thermosetting silicone, FSG3161K2C (manufactured by Fuji Polymer Industries Co., Ltd.), and the molding condition was 150 ° C. for 5 minutes.
  • the obtained light-emitting device was as shown in FIG. 1, and a light-emitting element with high uniformity of the phosphor layer and a light-emitting element with high mass productivity could be obtained. Further, the light emitting element that achieves desired light emission characteristics can be obtained without the size and concentration being changed during processing.
  • Example 2 A light emitting device was produced in the same manner as in Example 1 except that the phosphor concentration and the coating thickness of the frame-like structure were changed to Table 1 below. The obtained light emitting device was caused to emit light in the same manner as in Example 1, and the color temperature was measured. These conditions and results are shown in Table 1.
  • the phosphor concentration of the frame-like structure is preferably 5 to 20% by mass.
  • Comparative Example 1 As a comparative example, a rectangular parallelepiped frame-like structure not blended with a phosphor was molded as in the prior art, and a filler blended with a phosphor was injected and cured after an arbitrary time after blending. . The obtained light emitting device was caused to emit light in the same manner as in Example 1, and the color temperature was measured. These conditions and results are shown in Table 2 together with the results of Example 1.
  • the light emitting device of Example 1 had a substantially uniform color temperature regardless of the elapsed time, but the color temperature of the light emitting device of Comparative Example 1 fluctuated with the elapsed time. This is because the phosphor blended in the filler settles and the concentration of the phosphor contained in the filler to be injected increases.
  • the method for manufacturing a light emitting device and the light emitting device of the present invention can be used for a light source such as an illumination, a display and a backlight.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

Dans le dispositif émetteur de lumière (400) selon l’invention, un élément semi-conducteur émetteur de lumière (403) est monté sur un substrat (401), l’élément émetteur de lumière (403) est recouvert d’une structure résineuse en forme de cadre (405) contenant une substance fluorescente, et un espace entre l’élément émetteur de lumière (403) et la structure en forme de cadre (405) est rempli d’un matériau résineux transmettant la lumière (406).  La structure en forme de cadre (405) qui est moulée au préalable est de préférence incorporée.  Le dispositif émetteur de lumière (400) est obtenu en montant l’élément semi-conducteur émetteur de lumière (403) sur le substrat (401), en recouvrant l’élément émetteur de lumière (403) avec la structure résineuse en forme de cadre (405) contenant une substance fluorescente, et en remplissant l’espace entre l’élément émetteur de lumière et la structure en forme de cadre avec le matériau résineux transmettant la lumière (406).  L’invention concerne ainsi un procédé de fabrication de l’élément émetteur de lumière avec une couche de substance fluorescente hautement uniforme et avec une forte productivité de masse.
PCT/JP2009/058090 2008-08-27 2009-04-23 Dispositif émetteur de lumière et son procédé de fabrication WO2010023992A1 (fr)

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JP2012129362A (ja) * 2010-12-15 2012-07-05 Nitto Denko Corp 光半導体装置
CN102986032A (zh) * 2010-06-17 2013-03-20 邱罗利士公司 发光结构及其制法
WO2012160107A3 (fr) * 2011-05-24 2013-05-16 Osram Opto Semiconductors Gmbh Élément optique, composant optoélectronique et procédé de fabrication de ceux-ci
JP2013522915A (ja) * 2010-03-19 2013-06-13 マイクロン テクノロジー， インク． 増強したサーマルシンキングを有する発光ダイオード及び関連する動作方法
WO2013127985A1 (fr) * 2012-03-01 2013-09-06 Osram Opto Semiconductors Gmbh Élément optoélectronique et procédé de fabrication d'un élément optoélectronique
JP2013197369A (ja) * 2012-03-21 2013-09-30 Rohm Co Ltd 光源装置およびｌｅｄランプ

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Cited By (13)

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US11688842B2 (en) 2010-03-19 2023-06-27 Micron Technology, Inc. Light emitting diodes with enhanced thermal sinking and associated methods of operation
JP2013522915A (ja) * 2010-03-19 2013-06-13 マイクロン テクノロジー， インク． 増強したサーマルシンキングを有する発光ダイオード及び関連する動作方法
US11239403B2 (en) 2010-03-19 2022-02-01 Micron Technology, Inc. Light emitting diodes with enhanced thermal sinking and associated methods of operation
US10403805B2 (en) 2010-03-19 2019-09-03 Micron Technology, Inc. Light emitting diodes with enhanced thermal sinking and associated methods of operation
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