WO2009154191A1 - Élément électroluminescent à semi-conducteur, électrode et procédé de fabrication de l'élément et lampe - Google Patents

Élément électroluminescent à semi-conducteur, électrode et procédé de fabrication de l'élément et lampe Download PDF

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WO2009154191A1
WO2009154191A1 PCT/JP2009/060926 JP2009060926W WO2009154191A1 WO 2009154191 A1 WO2009154191 A1 WO 2009154191A1 JP 2009060926 W JP2009060926 W JP 2009060926W WO 2009154191 A1 WO2009154191 A1 WO 2009154191A1
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Prior art keywords
layer
electrode
bonding
light emitting
semiconductor light
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PCT/JP2009/060926
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English (en)
Japanese (ja)
Inventor
大介 平岩
健彦 岡部
玲美 大庭
宗隆 渡邉
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昭和電工株式会社
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Priority claimed from JP2008199802A external-priority patent/JP5178383B2/ja
Priority claimed from JP2008228133A external-priority patent/JP2010062425A/ja
Priority claimed from JP2009133177A external-priority patent/JP5515431B2/ja
Application filed by 昭和電工株式会社 filed Critical 昭和電工株式会社
Priority to CN200980131958.1A priority Critical patent/CN102124574B/zh
Priority to US12/999,530 priority patent/US8569735B2/en
Publication of WO2009154191A1 publication Critical patent/WO2009154191A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Definitions

  • the present invention relates to a semiconductor light emitting device, an electrode thereof, a manufacturing method thereof, and a lamp, and more particularly to a semiconductor light emitting device including an electrode having improved bonding properties and corrosion resistance, an electrode thereof, a manufacturing method thereof, and a lamp.
  • the present application was filed on June 16, 2008, Japanese Patent Application No. 2008-157248 filed in Japan, August 1, 2008, Japanese Patent Application No. 2008-199802 filed in Japan, September 5, 2008 Priority is claimed based on Japanese Patent Application No. 2008-228133 filed in Japan and Japanese Patent Application No. 2009-133177 filed in Japan on June 2, 2009, the contents of which are incorporated herein by reference.
  • GaN-based compound semiconductors have attracted attention as semiconductor materials for short wavelength light emitting devices.
  • GaN-based compound semiconductors include sapphire single crystals, various oxides and III-V compounds as substrates, and metalorganic vapor phase chemical reaction method (MOCVD method) and molecular beam epitaxy method (MBE method). It is formed by thin film forming means such as.
  • a thin film made of a GaN compound semiconductor has a characteristic that current diffusion in the in-plane direction of the thin film is small. Furthermore, the p-type GaN-based compound semiconductor has a characteristic that the resistivity is higher than that of the n-type GaN-based compound semiconductor. For this reason, there is almost no spread of current in the in-plane direction of the p-type semiconductor layer simply by stacking a p-type electrode made of metal on the surface of the p-type semiconductor layer.
  • a laminated semiconductor layer having an LED structure including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer is formed, and a p-type semiconductor layer is formed on the uppermost p-type semiconductor layer.
  • the electrode is formed, only the portion of the light emitting layer located immediately below the p-type electrode emits light. For this reason, in order to take out the light emitted immediately below the p-type electrode to the outside of the semiconductor light emitting device, it is necessary to make the p-type electrode transparent so that the p-type electrode can transmit the emitted light. is there.
  • Patent Document 1 discloses a method using a metal thin film of about several tens of nanometers. Ni and Au are stacked on a p-type semiconductor layer of several tens of nanometers each as a p-type electrode, and then in an oxygen atmosphere. It has been proposed to perform alloying treatment by heating to simultaneously promote the reduction in resistance of the p-type semiconductor layer and to form a p-type electrode having translucency and ohmic properties.
  • a translucent electrode made of a metal oxide such as ITO or an ohmic electrode made of a metal thin film of about several tens of nm has a problem that it is difficult to use the electrode itself as a bonding pad electrode because the strength of the electrode itself is low. was there.
  • a p-type electrode such as a translucent electrode made of a metal oxide such as ITO or an ohmic electrode made of a metal thin film of about several tens of nm.
  • a pad electrode is arranged.
  • this bonding pad electrode is a metal material having a certain thickness, it has no translucency and blocks light emitted through the translucent p-type electrode. There is a problem that it cannot be taken out.
  • Patent Document 2 discloses a method of laminating a bonding pad electrode made of a reflective film such as Ag or Al on a p-type electrode.
  • a metal oxide such as ITO is used as the p-type electrode and a reflective film such as Ag or Al is used as the bonding pad electrode, bonding is attempted when bonding wires or the like are bonded to the bonding pad electrode.
  • the bonding pad electrode could not withstand the tensile stress during wire bonding, and the pad electrode would peel off. In some cases, the bonding pad electrode is peeled off from the translucent electrode, thereby reducing the yield in manufacturing a lamp using the bonding pad electrode. Further, the conventional semiconductor light emitting device has insufficient corrosion resistance and has been required to improve the corrosion resistance.
  • the present invention has been made in view of the above circumstances, and a semiconductor light emitting device including an electrode having excellent bonding properties and corrosion resistance, a manufacturing method thereof, and a lamp that is excellent in corrosion resistance and can be manufactured with high yield using the same.
  • the purpose is to provide.
  • the present invention employs the following configuration. That is, (1) A substrate, a laminated semiconductor layer including a light emitting layer formed on the substrate, one electrode formed on an upper surface of the laminated semiconductor layer, and a portion of the laminated semiconductor layer being cut away The other electrode formed on the exposed surface of the semiconductor layer, wherein at least one of the one electrode or the other electrode covers the bonding layer and the bonding layer.
  • the bonding pad electrode is formed such that the maximum thickness of the bonding pad electrode is larger than the maximum thickness of the bonding layer, and the bonding pad electrode includes one or more layers.
  • a semiconductor light emitting element characterized in that an inclined surface is formed on the outer periphery of the pad electrode so that the film thickness gradually decreases toward the outer periphery.
  • the bonding layer is selected from the group consisting of Al, Ti, V, Cr, Mn, Co, Zn, Ge, Zr, Nb, Mo, Ru, Hf, Ta, W, Re, Rh, Ir, and Ni.
  • the semiconductor light-emitting device according to (1) comprising a thin film having a maximum thickness in the range of 10 to 1000 mm.
  • the bonding pad electrode is made of a bonding layer made of Au, Al, or an alloy containing any of these metals, and the bonding layer is a thin film having a maximum thickness in the range of 50 nm to 2000 nm.
  • the bonding pad electrode includes a metal reflection layer formed so as to cover the bonding layer and a bonding layer formed so as to cover the metal reflection layer, and the metal reflection layer includes Ag, Al. , Ru, Rh, Pd, Os, Ir, Pt, Ti, or an alloy containing any of these metals, and having a maximum thickness in the range of 20 nm to 3000 nm
  • the semiconductor light emitting device according to any one of (1) to (3).
  • a translucent electrode is formed between the one electrode and the upper surface of the stacked semiconductor layer or between the other electrode and the exposed surface of the semiconductor layer, and the translucent electrode is In , Zn, Al, Ga, Ti, Bi, Mg, W, Ce, Sn, a light-transmitting material selected from the group consisting of any one of zinc sulfide and chromium sulfide
  • the semiconductor light-emitting device according to any one of (1) to (4), wherein the semiconductor light-emitting device is made of a conductive material.
  • the stacked semiconductor layer is formed by stacking an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer in this order from the substrate side, and the light-emitting layer has a multiple quantum well structure (1)
  • the semiconductor light emitting device according to any one of to (5).
  • the semiconductor light emitting element according to any one of (1) to (7), a first frame in which the semiconductor light emitting element is disposed and wire-bonded to one electrode of the semiconductor light emitting element, and the semiconductor A lamp comprising: a second frame wire-bonded to the other electrode of the light-emitting element; and a mold formed surrounding the semiconductor light-emitting element.
  • a substrate, a laminated semiconductor layer including a light emitting layer formed on the substrate, one electrode formed on an upper surface of the laminated semiconductor layer, and a part of the laminated semiconductor layer are cut away
  • the bonding layer is selected from the group consisting of Al, Ti, V, Cr, Mn, Co, Zn, Ge, Zr, Nb, Mo, Ru, Hf, Ta, W, Re, Rh, Ir, and Ni.
  • the bonding pad electrode is made of a bonding layer made of Au, Al, or an alloy containing any of these metals, and the bonding layer is a thin film having a maximum thickness in the range of 50 nm to 2000 nm.
  • the bonding pad electrode includes a metal reflection layer formed so as to cover the bonding layer and a bonding layer formed so as to cover the metal reflection layer, and the metal reflection layer includes Ag, Al. , Ru, Rh, Pd, Os, Ir, Pt, Ti, or an alloy containing any of these metals, and having a maximum thickness in the range of 20 nm to 3000 nm (9)
  • the electrode for a semiconductor light-emitting device according to any one of (9) to (11).
  • a translucent electrode is formed between the one electrode and the upper surface of the stacked semiconductor layer or between the other electrode and the exposed surface of the semiconductor layer, and the translucent electrode is In , Zn, Al, Ga, Ti, Bi, Mg, W, Ce, Sn, a light-transmitting material selected from the group consisting of any one of zinc sulfide and chromium sulfide (9)
  • a bonding layer is formed on the upper surface of the stacked semiconductor layer or the exposed surface of the semiconductor layer, and then covers the bonding layer
  • a semiconductor light emitting device comprising a step of forming a bonding pad electrode having a maximum thickness compared to the maximum thickness of the bonding layer to form one electrode or the other electrode. The method of production.
  • a metal reflective layer having a maximum thickness compared to the maximum thickness of the bonding layer is formed so as to cover the bonding layer; Thereafter, a bonding layer having a maximum thickness compared to the maximum thickness of the metal reflection layer is formed so as to cover the metal reflection layer, thereby forming one electrode or the other electrode.
  • the method includes a step of forming a protective film on the upper surface of the translucent electrode and the upper surface of the laminated semiconductor layer or on the exposed surface of the semiconductor layer before the mask forming step (14).
  • a substrate, a laminated semiconductor layer including a light emitting layer formed on the substrate, one electrode formed on an upper surface of the laminated semiconductor layer, and a part of the laminated semiconductor layer are cut away.
  • a semiconductor light emitting element comprising:
  • the bonding layer is selected from the group consisting of Al, Ti, V, Cr, Mn, Co, Zn, Ge, Zr, Nb, Mo, Ru, Hf, Ta, W, Re, Rh, Ir, and Ni.
  • the bonding pad electrode includes a metal reflection layer formed so as to cover the bonding layer and a bonding layer formed so as to cover the metal reflection layer, and the metal reflection layer includes Ag, Al.
  • the translucent electrode is a conductive oxide, zinc sulfide, or chromium sulfide containing any one of In, Zn, Al, Ga, Ti, Bi, Mg, W, Ce, Sn, and Ni.
  • an edge protection film is formed which covers an outer edge of the bonding pad electrode and exposes a part of the bonding pad electrode.
  • a transparent protective film is formed so as to cover a region where the bonding recess is not formed on the upper surface of the translucent electrode, and the outer edge portion of the bonding layer and the outer edge portion of the bonding pad electrode are The semiconductor light-emitting device according to any one of (19) to (24), which is disposed on a transparent protective film.
  • the stacked semiconductor layer is formed by stacking an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer in this order from the substrate side, and the light-emitting layer has a multiple quantum well structure (19)
  • a substrate, a laminated semiconductor layer including a light emitting layer formed on the substrate, one electrode formed on an upper surface of the laminated semiconductor layer, and a part of the laminated semiconductor layer are cut away.
  • a method of manufacturing a semiconductor light emitting device comprising the other electrode formed on the exposed surface of the semiconductor layer, wherein the step of manufacturing at least one of the one electrode or the other electrode comprises a translucent electrode Forming a mask having an opening having an inner wall shape whose cross-sectional area gradually increases toward the bottom surface on the upper surface of the translucent electrode, and the transparent electrode exposed from the opening.
  • a substrate, a laminated semiconductor layer including a light emitting layer formed on the substrate, one electrode formed on an upper surface of the laminated semiconductor layer, and a part of the laminated semiconductor layer are cut away.
  • a semiconductor light emitting device comprising the other electrode formed on the exposed surface of the semiconductor layer, wherein either one or both of the one electrode and the other electrode is the upper surface of the stacked semiconductor layer or the semiconductor layer
  • a semiconductor light emitting device comprising: an ohmic bonding layer formed on an exposed surface; a bonding layer formed on the ohmic bonding layer; and a bonding pad electrode formed so as to cover the bonding layer.
  • the bonding layer is selected from the group consisting of Al, Ti, V, Cr, Mn, Co, Zn, Ge, Zr, Nb, Mo, Ru, Hf, Ta, W, Re, Rh, Ir, and Ni.
  • the bonding pad electrode includes a metal reflection layer formed so as to cover the bonding layer and a bonding layer formed so as to cover the metal reflection layer, and the metal reflection layer includes Ag, Al. , Ru, Rh, Pd, Os, Ir, Pt, Ti, or an alloy containing any one of these metals.
  • the ohmic junction layer is any one of a conductive oxide, zinc sulfide, or chromium sulfide containing any one of In, Zn, Al, Ga, Ti, Bi, Mg, W, Ce, Sn, and Ni.
  • the laminated semiconductor layer is formed by laminating an n-type semiconductor layer, a light emitting layer, and a p-type semiconductor layer in this order from the substrate side, and the light emitting layer has a multiple quantum well structure (32)
  • the semiconductor light-emitting device according to any one of to (37).
  • the semiconductor light emitting element according to any one of (32) to (38), a first frame in which the semiconductor light emitting element is disposed and wire-bonded to one electrode of the semiconductor light emitting element,
  • a lamp comprising: a second frame wire-bonded to the other electrode of the semiconductor light emitting element; and a mold formed surrounding the semiconductor light emitting element.
  • a semiconductor light emitting device including an electrode with improved bondability and corrosion resistance, a manufacturing method thereof, and a lamp.
  • one electrode includes a bonding layer and a bonding pad electrode formed so as to cover the bonding layer, and the maximum thickness of the bonding pad electrode is thicker than the maximum thickness of the bonding layer.
  • the inclined surface is formed of one or two or more layers and the outer peripheral side of the bonding layer and the bonding pad electrode is gradually thinned, the external air or moisture bonding layer is formed. Can be prevented, the corrosion resistance of the bonding layer can be improved, and the lifetime of the semiconductor light emitting device can be extended.
  • the bonding layer is made of Al, Ti, V, Cr, Mn, Co, Zn, Ge, Zr, Nb, Mo, Ru, Hf, Ta, W, Re, Rh, Ir, and Ni. Since it is composed of at least one element selected from the group consisting of a thin film having a maximum thickness in the range of 10 to 1000 mm, the bonding between the translucent electrode and the bonding pad electrode is improved. Further, an electrode that does not peel off due to tensile stress during bonding of the bonding wires can be obtained.
  • the semiconductor light emitting device of the present invention is composed of a bonding layer made of Au, Al, or an alloy containing any of these metals, and the maximum thickness of the bonding layer is a thin film having a range of 50 nm to 2000 nm, a bonding pad By improving the bondability of wire bonding to the electrode, it is possible to obtain an electrode that does not peel off due to tensile stress during bonding wire bonding.
  • the semiconductor light emitting device of the present invention comprises a metal reflective layer in which the bonding pad electrode is formed so as to cover the bonding layer, and a bonding layer formed so as to cover the metal reflective layer, and the metal reflective layer 117 is made of Ag. , Al, Ru, Rh, Pd, Os, Ir, Pt, Ti, or an alloy containing any of these metals, and a maximum thickness of 20 nm to 3000 nm. Therefore, it is possible to improve the bondability and corrosion resistance of the electrodes and improve the light emission characteristics of the semiconductor light emitting device.
  • the electrode for a semiconductor light emitting device of the present invention comprises a bonding layer and a bonding pad electrode formed so as to cover the bonding layer, at least one of the one electrode and the other electrode, and the maximum thickness of the bonding pad electrode. However, it is formed thicker than the maximum thickness of the bonding layer, and is composed of one or more layers, and the film thickness gradually decreases toward the outer peripheral side at the outer peripheral portion of the bonding layer and the bonding pad electrode, respectively. Since it is the structure in which the inclined surface is formed, it can be set as the electrode which improved bondability and corrosion resistance.
  • the electrode for a semiconductor light emitting device of the present invention can be used for applications other than the light emitting device.
  • the electrode forming step forms an inversely tapered mask on the upper surface of the laminated semiconductor layer, then forms a bonding layer on the upper surface of the laminated semiconductor layer, and then covers the bonding layer In this way, the bonding pad electrode having a maximum thickness compared to the maximum thickness of the bonding layer is formed, and one electrode is formed.
  • the outer peripheral side of the bonding layer and the bonding pad electrode is gradually thinner on the outer peripheral side.
  • the semiconductor light-emitting device of the present invention includes a translucent electrode in which at least one of one electrode or the other electrode has a bonding recess on an upper surface, a bonding layer formed so as to cover the bonding recess, and the bonding And a bonding pad electrode formed so as to cover the layer and having an inclined surface with a gradually decreasing thickness toward the outside at the outer peripheral portion.
  • the bonding pad electrode having the inclined surface whose thickness is gradually reduced toward the outside is formed so as to cover the bonding layer.
  • the contact area between the outer peripheral portion and the lower surface of the outer peripheral portion of the bonding pad electrode is sufficiently ensured, and excellent bondability is obtained, and between the outer peripheral portion of the bonding pad electrode and the lower surface thereof, Air and moisture can be effectively prevented from entering the bonding layer from the outside, and excellent corrosion resistance can be obtained.
  • the lamp of the present invention includes the semiconductor light emitting device of the present invention provided with electrodes having excellent bonding properties and corrosion resistance, it can be manufactured with a high yield and has excellent corrosion resistance.
  • the step of manufacturing at least one of one electrode or the other electrode includes a step of forming a translucent electrode, and an upper surface of the translucent electrode.
  • the method includes a step of forming a bonding pad electrode having an inclined surface that gradually becomes thinner on the outer peripheral portion and a step of removing the mask, the half of the present invention including an electrode having excellent bonding properties and corrosion resistance is provided.
  • the body light-emitting element can be easily manufactured.
  • either one or both of one electrode and the other electrode is formed on the upper surface of the laminated semiconductor layer or the exposed surface of the semiconductor layer, and on the ohmic junction layer. Since the bonding layer formed and a bonding pad electrode formed so as to cover the bonding layer, one or both of the one electrode and the other electrode are formed on the ohmic bonding layer. The bonding layer and the bonding pad electrode formed so as to cover the bonding layer provide a sufficiently high bonding force between the ohmic bonding layer and the bonding pad electrode, and thus have excellent bonding properties. An electrode is provided.
  • the lamp of the present invention includes the semiconductor light emitting device of the present invention having one electrode having excellent bonding properties and the other electrode, the tensile force when bonding a bonding wire to the bonding pad electrode is obtained. It is possible to prevent the bonding pad electrode from being peeled off from the translucent electrode due to the stress, and it is possible to manufacture with high yield.
  • both the step of manufacturing the one electrode and the step of manufacturing the other electrode are performed in an ohmic contact on the upper surface of the stacked semiconductor layer or the exposed surface of the semiconductor layer.
  • the pad forming step and the heat treatment step in the step of manufacturing the one electrode and the step of manufacturing the other electrode are performed simultaneously, And the other electrode are formed at the same time, and can be manufactured efficiently and easily as compared with the case where one electrode and the other electrode are formed separately.
  • FIG. 14 is a view showing an example of the semiconductor light emitting device of the present invention, and is a schematic sectional view of the semiconductor light emitting device.
  • FIG. 15 is a schematic plan view of the semiconductor light emitting device shown in FIG. 16 is an enlarged schematic cross-sectional view of a laminated semiconductor layer constituting the semiconductor light emitting device shown in FIG.
  • FIG. 17 is an enlarged schematic cross-sectional view of a p-type electrode constituting the semiconductor light emitting device shown in FIG. FIG.
  • FIG. 18 is an example of a process diagram for explaining a process of manufacturing the p-type electrode, and is an enlarged cross-sectional view showing only a part of a region where the p-type electrode is manufactured.
  • FIG. 19 is an example of a process diagram for explaining the manufacturing process of the mask shown in FIG. 18B, and is an enlarged cross-sectional view showing only a region where one p-type electrode is formed.
  • FIG. 20 is a diagram showing another example of the semiconductor light emitting device of the present invention, and is a schematic cross-sectional view of the semiconductor light emitting device.
  • FIG. 21 is a view showing another example of the semiconductor light emitting device of the present invention, and is an enlarged schematic cross-sectional view of a p-type electrode constituting the semiconductor light emitting device.
  • FIG. 22 is a view showing another example of the semiconductor light emitting device of the present invention, and is a schematic sectional view of the semiconductor light emitting device.
  • FIG. 23 is a process diagram for describing a process of manufacturing a p-type electrode, and is an enlarged cross-sectional view illustrating only a part of a region where the p-type electrode is manufactured. It is a cross-sectional schematic diagram which shows an example of the lamp
  • FIG. 26 is a diagram showing an example of the semiconductor light emitting device of the present invention, and is a schematic sectional view of the semiconductor light emitting device.
  • 27 is a schematic plan view of the semiconductor light emitting device shown in FIG.
  • FIG. 28 is an enlarged schematic cross-sectional view of a laminated semiconductor layer constituting the semiconductor light emitting device shown in FIG. 29A and 29B are diagrams for explaining the electrodes constituting the semiconductor light emitting device shown in FIG. 26.
  • FIG. 29A is an enlarged schematic cross-sectional view of a p-type electrode
  • FIG. 29B is an n-type. It is an expanded section schematic diagram of an electrode.
  • FIG. 30 is a process diagram for explaining a process of manufacturing the p-type electrode, and is an enlarged cross-sectional view showing only a part of a region where the p-type electrode 111 is manufactured.
  • FIG. 31 is a process diagram for explaining a manufacturing process of a mask formed when manufacturing an n-type electrode and a p-type electrode, and is an enlarged sectional view showing only a region where one p-type electrode is formed. It is.
  • FIG. 32 is a process diagram for explaining a process of manufacturing the n-type electrode, and is an enlarged cross-sectional view showing only a part of a region where the n-type electrode is manufactured.
  • FIG. 30 is a process diagram for explaining a process of manufacturing the p-type electrode, and is an enlarged cross-sectional view showing only a part of a region where the n-type electrode is manufactured.
  • FIG. 33 is a schematic diagram for explaining a process of manufacturing the n-type electrode 108 and the p-type electrode 111.
  • FIG. 34 is a diagram showing another example of the semiconductor light emitting device of the present invention, and is a schematic cross-sectional view of the semiconductor light emitting device.
  • FIG. 35 is a diagram showing another example of the semiconductor light emitting device of the present invention, and is a schematic cross-sectional view of the semiconductor light emitting device.
  • FIG. 36 is a process diagram for explaining a process of manufacturing the n-type electrode 128 and the p-type electrode 111b, and is an enlarged cross-sectional view showing only a part of a region where the p-type electrode 111b is manufactured. It is.
  • FIG. 37 is a schematic sectional view showing an example of the lamp of the present invention.
  • FIG. 1 is a schematic cross-sectional view of the semiconductor light emitting device according to an embodiment of the present invention
  • FIG. 3 is a schematic diagram
  • FIG. 3 is a schematic cross-sectional view of a laminated semiconductor layer constituting the semiconductor light-emitting device
  • FIG. 4 is an enlarged schematic cross-sectional view of a p-type electrode constituting the semiconductor light-emitting device shown in FIG.
  • a semiconductor light emitting device 1 As shown in FIG. 1, in a semiconductor light emitting device 1 according to an embodiment of the present invention, a laminated semiconductor layer 20 including a buffer layer 102, a base layer 103, and a light emitting layer 105 is sequentially laminated on a substrate 101.
  • a translucent electrode 109 is stacked on the upper surface 106 c of the semiconductor layer 20, and one (one conductivity type) electrode 111 is formed on a part of the upper surface 109 c of the translucent electrode 109.
  • the other (other conductivity type) electrode 108 is formed on the semiconductor layer exposed surface 104c formed by cutting out part of the semiconductor layer, and is schematically configured.
  • the stacked semiconductor layer 20 is configured by stacking an n-type semiconductor layer 104, a light emitting layer 105, and a p-type semiconductor layer 106 in this order from the substrate 101 side. A portion of the upper surface 109 c of the translucent electrode 109 where the one conductive type electrode 111 is not formed is covered with the protective film 10.
  • One conductive type electrode 111 is formed by laminating a bonding layer 110 and a bonding pad electrode 120 including a metal reflection layer 117 and a bonding layer 119. In the following description, one electrode 111 is a p-type electrode and the other electrode 108 is an n-type electrode.
  • the semiconductor light emitting device 1 applies a voltage between a p-type electrode (one conduction type electrode) 111 and an n-type electrode (another conduction type electrode) 108 to pass a current.
  • the face-up mount is configured so that light emission can be obtained from the light-emitting layer 105 and taken out from the side on which the bonding pad electrode 120 (reflective bonding pad electrode) having a function of reflecting light from the light-emitting layer 105 is formed.
  • Type light emitting element is configured so that light emission can be obtained from the light-emitting layer 105 and taken out from the side on which the bonding pad electrode 120 (reflective bonding pad electrode) having a function of reflecting light from the light-emitting layer 105 is formed.
  • a part of light emitted from the light emitting layer 105 is transmitted through the translucent electrode 109 and the bonding layer 110, reflected by the bonding pad electrode 120 at the interface between the bonding layer 110 and the bonding pad electrode 120, and again, the laminated semiconductor layer 20. Introduced inside. Then, the light reintroduced into the laminated semiconductor layer 20 is further transmitted and reflected, and then extracted outside the semiconductor light emitting element 1 from a location other than the bonding pad electrode 120 formation region.
  • the substrate 101 of the semiconductor light-emitting element 1 according to the embodiment of the present invention is not particularly limited as long as a group III nitride semiconductor crystal is epitaxially grown on the surface, and various substrates can be selected and used.
  • various substrates can be selected and used.
  • a substrate made of lanthanum strontium oxide aluminum tantalum, strontium titanium oxide, titanium oxide, hafnium, tungsten, molybdenum, or the like can be used.
  • the buffer layer 102 is preferably formed on the c-plane of sapphire.
  • an oxide substrate or a metal substrate that is known to cause chemical modification by contact with ammonia at a high temperature can be used, and the buffer layer 102 can be formed without using ammonia.
  • the buffer layer 102 In the method using ammonia, when the base layer 103 is formed to form the n-type semiconductor layer 104 described later, the buffer layer 102 also functions as a coat layer. These methods are effective in preventing chemical alteration of the substrate 101.
  • the buffer layer 102 is formed by a sputtering method, the temperature of the substrate 101 can be kept low. Therefore, even when the substrate 101 made of a material that decomposes at a high temperature is used, the substrate 101 is damaged. Each layer can be formed on the substrate without giving.
  • the stacked semiconductor layer 20 of the semiconductor light emitting device 1 is a layer made of, for example, a group III nitride semiconductor. As shown in FIG. The light emitting layer 105 and the p-type semiconductor layer 106 are stacked in this order. Further, as shown in FIG. 3, each of the n-type semiconductor layer 104, the light emitting layer 105, and the p-type semiconductor layer 106 may be composed of a plurality of semiconductor layers. Furthermore, the laminated semiconductor layer 20 may be further referred to as including the base layer 103 and the buffer layer 102.
  • the stacked semiconductor layer 20 can be formed with a good crystallinity when formed by the MOCVD method, but by optimizing the conditions also by the sputtering method, a semiconductor layer having a crystallinity superior to that of the MOCVD method can be formed. .
  • description will be made sequentially.
  • Buffer layer (intermediate layer) 102 is preferably made of polycrystalline Al x Ga 1-x N (0 ⁇ x ⁇ 1), the single crystal Al x Ga 1-x N of (0 ⁇ x ⁇ 1) Those are more preferred.
  • the buffer layer 102 can be formed by MOCVD as described above, but may be formed by sputtering. When the buffer layer 102 is formed by sputtering, the temperature of the substrate 101 can be kept low when the buffer layer 102 is formed. Therefore, even when the substrate 101 made of a material having a property of decomposing at high temperature is used, Each layer can be formed on the substrate 101 without damaging the substrate 101, which is preferable.
  • the buffer layer 102 can be, for example, made of polycrystalline Al x Ga 1-x N (0 ⁇ x ⁇ 1) and having a thickness of 0.01 to 0.5 ⁇ m.
  • the buffer layer 102 may not sufficiently obtain an effect of reducing the difference in lattice constant between the substrate 101 and the base layer 103.
  • the thickness of the buffer layer 102 exceeds 0.5 ⁇ m, although the function as the buffer layer 102 is not changed, the film formation processing time of the buffer layer 102 becomes long, and the productivity may be reduced. There is.
  • the buffer layer 102 has a function of relaxing the difference in lattice constant between the substrate 101 and the base layer 103 and facilitating formation of a C-axis oriented single crystal layer on the (0001) C plane of the substrate 101. Therefore, when the single crystal base layer 103 is stacked over the buffer layer 102, the base layer 103 with higher crystallinity can be stacked. In the present invention, it is preferable to perform the buffer layer forming step, but it may not be performed.
  • the buffer layer 102 may have a hexagonal crystal structure made of a group III nitride semiconductor. Further, the group III nitride semiconductor crystals forming the buffer layer 102 may have a single crystal structure, and those having a single crystal structure are preferably used. By controlling the growth conditions, the group III nitride semiconductor crystal grows not only in the upward direction but also in the in-plane direction to form a single crystal structure. Therefore, by controlling the film formation conditions of the buffer layer 102, the buffer layer 102 made of a crystal of a group III nitride semiconductor having a single crystal structure can be obtained.
  • the buffer function of the buffer layer 102 is effective, so that the group III nitride semiconductor formed thereon has a good orientation. It becomes a crystalline film having the property and crystallinity.
  • the group III nitride semiconductor crystal forming the buffer layer 102 can be formed into a columnar crystal (polycrystal) having a texture based on a hexagonal column by controlling the film forming conditions.
  • the columnar crystal formed of the texture here is a crystal that is separated by forming a grain boundary between adjacent crystal grains, and is itself a columnar shape as a longitudinal sectional shape.
  • the film thickness of the underlayer 103 is preferably 0.1 ⁇ m or more, more preferably 0.5 ⁇ m or more, and most preferably 1 ⁇ m or more.
  • An Al x Ga 1-x N layer with good crystallinity is more easily obtained when the thickness is increased.
  • the base layer 103 is preferably not doped with impurities. However, when p-type or n-type conductivity is required, acceptor impurities or donor impurities can be added.
  • the n-type semiconductor layer 104 is preferably composed of an n-contact layer 104a and an n-clad layer 104b.
  • the n contact layer 104a can also serve as the n clad layer 104b.
  • the above-described base layer may be included in the n-type semiconductor layer 104.
  • the n contact layer 104a is a layer for providing an n-type electrode.
  • the n contact layer 104a is preferably composed of an Al x Ga 1-x N layer (0 ⁇ x ⁇ 1, preferably 0 ⁇ x ⁇ 0.5, more preferably 0 ⁇ x ⁇ 0.1). .
  • n-type impurity is doped into the n-contact layer 104a, an n-type impurity 1 ⁇ 10 17 ⁇ 1 ⁇ 10 20 / cm 3, preferably 1 ⁇ 10 18 ⁇ 1 ⁇ 10 19 / cm If it contains in the density
  • an n-type impurity For example, Si, Ge, Sn, etc. are mentioned, Preferably Si and Ge are mentioned.
  • the thickness of the n contact layer 104a is preferably 0.5 to 5 ⁇ m, and more preferably set to a range of 1 to 3 ⁇ m. When the film thickness of the n-contact layer 104a is in the above range, the semiconductor crystallinity is maintained well.
  • n-clad layer 104b is preferably provided between the n-contact layer 104a and the light-emitting layer 105.
  • the n-clad layer 104b is a layer that injects carriers into the light emitting layer 105 and confines carriers.
  • the n-clad layer 104b can be formed of AlGaN, GaN, GaInN, or the like. Alternatively, a heterojunction of these structures or a superlattice structure in which a plurality of layers are stacked may be used. Needless to say, when the n-cladding layer 104b is formed of GaInN, it is desirable to make it larger than the band gap of GaInN of the light emitting layer 105.
  • the film thickness of the n-clad layer 104b is not particularly limited, but is preferably 0.005 to 0.5 ⁇ m, and more preferably 0.005 to 0.1 ⁇ m.
  • the n-type doping concentration of the n-clad layer 104b is preferably 1 ⁇ 10 17 to 1 ⁇ 10 20 / cm 3 , more preferably 1 ⁇ 10 18 to 1 ⁇ 10 19 / cm 3 . A doping concentration within this range is preferable in terms of maintaining good crystallinity and reducing the operating voltage of the device.
  • n-cladding layer 104b is a layer including a superlattice structure, a detailed illustration is omitted, but an n-side first layer made of a group III nitride semiconductor having a thickness of 100 angstroms or less and A structure in which an n-side second layer made of a group III nitride semiconductor having a composition different from that of the n-side first layer and having a thickness of 100 angstroms or less is stacked may be included.
  • the n-clad layer 104b may include a structure in which n-side first layers and n-side second layers are alternately and repeatedly stacked. Preferably, either the n-side first layer or the n-side second layer is in contact with the active layer (light-emitting layer 105).
  • the n-side first layer and the n-side second layer as described above are, for example, AlGaN-based Al (which may be simply referred to as AlGaN), GaInN-based (which may be simply described as GaInN) including In,
  • the composition may be GaN.
  • the n-side first layer and the n-side second layer are composed of an alternating GaInN / GaN structure, an AlGaN / GaN alternating structure, an GaInN / AlGaN alternating structure, and a GaInN / GaInN alternating structure having a different composition (“ The description of “differing composition” means that each elemental composition ratio is different, and the same applies hereinafter), and may be an AlGaN / AlGaN alternating structure having a different composition.
  • the n-side first layer and the n-side second layer are preferably GaInN / GaInN having different GaInN / GaN structures or different compositions.
  • the superlattice layers of the n-side first layer and the n-side second layer are each preferably 60 angstroms or less, more preferably 40 angstroms or less, and each in the range of 10 angstroms to 40 angstroms. Most preferred. If the thicknesses of the n-side first layer and the n-side second layer forming the superlattice layer are more than 100 angstroms, crystal defects are likely to occur, which is not preferable.
  • the n-side first layer and the n-side second layer may each have a doped structure, or a combination of a doped structure and an undoped structure.
  • the impurity to be doped conventionally known impurities can be applied to the material composition without any limitation.
  • the n-side superlattice multilayer film as described above may be manufactured while doping is appropriately turned on and off even if the composition represented by GaInN, AlGaN, and GaN is the same.
  • a light emitting layer 105 As the light emitting layer 105 stacked on the n-type semiconductor layer 104, there is a light emitting layer 105 having a single quantum well structure or a multiple quantum well structure.
  • a well layer 105b having a quantum well structure as shown in FIG. 3 a group III nitride semiconductor layer made of Ga 1-y In y N (0 ⁇ y ⁇ 0.4) is usually used.
  • the film thickness of the well layer 105b can be set to a film thickness that can provide a quantum effect, for example, 1 to 10 nm, and preferably 2 to 6 nm in terms of light emission output.
  • the Ga 1-y In y N is used as the well layer 105b, and Al z Ga 1-z N (0 ⁇ z ⁇ 0) having a larger band gap energy than the well layer 105b. .3) is defined as a barrier layer 105a.
  • the well layer 105b and the barrier layer 105a may or may not be doped with impurities by design.
  • the p-type semiconductor layer 106 is generally composed of a p-clad layer 106a and a p-contact layer 106b.
  • the p contact layer 106b can also serve as the p clad layer 106a.
  • the p-cladding layer 106a is a layer for confining carriers in the light emitting layer 105 and injecting carriers.
  • the p-cladding layer 106a is not particularly limited as long as it has a composition larger than the band gap energy of the light-emitting layer 105 and can confine carriers in the light-emitting layer 105, but is preferably Al x Ga 1-x N (0 ⁇ x ⁇ 0.4).
  • the thickness of the p-clad layer 106a is not particularly limited, but is preferably 1 to 400 nm, more preferably 5 to 100 nm.
  • the p-type doping concentration of the p-clad layer 106a is preferably 1 ⁇ 10 18 to 1 ⁇ 10 21 / cm 3 , more preferably 1 ⁇ 10 19 to 1 ⁇ 10 20 / cm 3 .
  • the p-clad layer 106a may have a superlattice structure in which a plurality of layers are stacked.
  • the p-cladding layer 106a is a layer including a superlattice structure
  • a detailed illustration is omitted, but a p-side first layer made of a group III nitride semiconductor having a thickness of 100 angstroms or less and A structure in which a p-side second layer made of a group III nitride semiconductor having a composition different from that of the p-side first layer and having a film thickness of 100 angstroms or less is stacked may be included. Further, it may include a structure in which p-side first layers and p-side second layers are alternately and repeatedly stacked.
  • the p-side first layer and the p-side second layer as described above may have different compositions, for example, any composition of AlGaN, GaInN, or GaN, or an GaInN / GaN alternating structure, AlGaN.
  • An alternating structure of / GaN or an alternating structure of GaInN / AlGaN may be used.
  • the p-side first layer and the p-side second layer preferably have an AlGaN / AlGaN or AlGaN / GaN alternating structure.
  • the superlattice layers of the p-side first layer and the p-side second layer are each preferably 60 angstroms or less, more preferably 40 angstroms or less, and each in the range of 10 angstroms to 40 angstroms. Is most preferred. If the thickness of the p-side first layer and the p-side second layer forming the superlattice layer exceeds 100 angstroms, it becomes a layer containing many crystal defects and the like, which is not preferable.
  • the p-side first layer and the p-side second layer may each have a doped structure, or a combination of a doped structure and an undoped structure.
  • the impurity to be doped conventionally known impurities can be applied to the material composition without any limitation.
  • Mg is suitable as an impurity.
  • the p-side superlattice multilayer film as described above may be manufactured while doping is appropriately turned on and off even if the composition represented by GaInN, AlGaN, and GaN is the same.
  • the p contact layer 106b is a layer for providing a positive electrode.
  • the p contact layer 106b is preferably Al x Ga 1-x N (0 ⁇ x ⁇ 0.4).
  • Al composition is in the above range, it is preferable in terms of maintaining good crystallinity and good ohmic contact with the p ohmic electrode.
  • a p-type impurity (dopant) is contained at a concentration of 1 ⁇ 10 18 to 1 ⁇ 10 21 / cm 3 , preferably 5 ⁇ 10 19 to 5 ⁇ 10 20 / cm 3 , good ohmic contact can be obtained. It is preferable in terms of maintenance, prevention of crack generation, and good crystallinity.
  • the thickness of the p contact layer 106b is not particularly limited, but is preferably 0.01 to 0.5 ⁇ m, more preferably 0.05 to 0.2 ⁇ m. When the film thickness of the p-contact layer 106b is within this range, it is preferable in terms of light emission output.
  • an n-type electrode 108 is formed on the exposed surface 104 c of the n-type semiconductor layer 104.
  • the light emitting layer 105 and a part of the p-semiconductor layer 106 are cut and removed by means such as etching to expose the n-contact layer of the n-type semiconductor layer 104,
  • An n-type electrode 108 is formed on the exposed surface 104c.
  • the n-type electrode 108 has a circular shape when seen in a plan view, but is not limited to such a shape, and may have an arbitrary shape such as a polygonal shape. Further, the n-type electrode 108 also serves as a bonding pad, and can be connected to a bonding wire.
  • various known compositions and structures can be provided by conventional means well known in this technical field.
  • the n-type electrode 108 is also formed with a bonding layer having an inclined surface that gradually decreases in thickness toward the outer peripheral side, and a bonding pad electrode is formed so as to cover this. It may be formed. At this time, a permeable electrode or a protective film may be formed. Thereby, it is possible to prevent external air or moisture from entering the bonding layer of the n-type electrode 108, improve the corrosion resistance of the bonding layer, and extend the lifetime of the semiconductor light emitting device.
  • a translucent electrode 109 is stacked on the p-type semiconductor layer 106.
  • the translucent electrode 109 is formed on the upper surface 106c of the p-type semiconductor layer 106, part of which has been removed by means such as etching to form the n-type electrode 108.
  • it is formed so as to cover almost the entire surface, it is not limited to such a shape, and it may be formed in a lattice shape or a tree shape with a gap.
  • the structure of the translucent electrode 109 can be used without any limitation, including a conventionally known structure.
  • the translucent electrode 109 preferably has a small contact resistance with the p-type semiconductor layer 106.
  • the light-transmitting electrode 109 is preferably excellent in light transmittance. Furthermore, in order to diffuse current uniformly over the entire surface of the p-type semiconductor layer 106, the translucent electrode 109 preferably has excellent conductivity.
  • the constituent material of the translucent electrode 109 is a conductive oxide, sulfide, including any one of In, Zn, Al, Ga, Ti, Bi, Mg, W, Ce, Sn, and Ni.
  • a translucent conductive material selected from the group consisting of either zinc or chromium sulfide is preferred.
  • the translucent electrode 109 can be formed. Further, after forming the translucent electrode 109, thermal annealing may be performed for the purpose of alloying or transparency, but it may not be performed.
  • a crystallized structure may be used, and in particular, a translucent electrode (for example, ITO or IZO) containing an In 2 O 3 crystal having a hexagonal crystal structure or a bixbite structure is used. It can be preferably used.
  • a translucent electrode for example, ITO or IZO
  • ITO or IZO In 2 O 3 crystal having a hexagonal crystal structure
  • IZO containing In 2 O 3 crystal having a hexagonal crystal structure it can be processed into a specific shape using an amorphous IZO film having excellent etching properties, and then heat treatment is performed. By transferring from an amorphous state to a structure including the crystal by, for example, an electrode having a light-transmitting property better than that of an amorphous IZO film.
  • the ZnO concentration in IZO is preferably 1 to 20% by mass, and more preferably 5 to 15% by mass. 10% by mass is particularly preferable.
  • the film thickness of the IZO film is preferably in the range of 35 nm to 10000 nm (10 ⁇ m) at which low specific resistance and high light transmittance can be obtained. Furthermore, from the viewpoint of production cost, the thickness of the IZO film is preferably 1000 nm (1 ⁇ m) or less.
  • the patterning of the IZO film is preferably performed before the heat treatment process described later.
  • the amorphous IZO film becomes a crystallized IZO film, which makes etching difficult compared to the amorphous IZO film.
  • the IZO film before heat treatment is in an amorphous state, it can be easily and accurately etched using a known etching solution (ITO-07N etching solution (manufactured by Kanto Chemical Co., Inc.)).
  • the amorphous IZO film may be etched using a dry etching apparatus. At this time, Cl 2 , SiCl 4 , BCl 3, or the like can be used as an etching gas.
  • IZO film in an amorphous state for example, and was heat-treated in 500 ° C. ⁇ 1000 ° C., comprising an IZO film and that includes In 2 O 3 crystal having a hexagonal crystal structure for controlling the condition, an In 2 O 3 crystal bixbyite structure
  • An IZO film can be formed. Since an IZO film containing an In 2 O 3 crystal having a hexagonal crystal structure is difficult to etch as described above, it is preferable to perform a heat treatment after the above-described etching treatment.
  • Heat treatment of the IZO film is preferably performed in an atmosphere containing no O 2, as the atmosphere containing no O 2, N, such as 2 atmosphere or an inert gas atmosphere, or such as N 2 inert gas and H 2 A mixed gas atmosphere or the like can be given, and it is desirable to use an N 2 atmosphere or a mixed gas atmosphere of N 2 and H 2 .
  • N such as 2 atmosphere or an inert gas atmosphere, or such as N 2 inert gas and H 2
  • N 2 atmosphere or an inert gas atmosphere such as N 2 inert gas and H 2
  • a mixed gas atmosphere or the like can be given, and it is desirable to use an N 2 atmosphere or a mixed gas atmosphere of N 2 and H 2 .
  • N such as 2 atmosphere or an inert gas atmosphere, or such as N 2 inert gas and H 2
  • a mixed gas atmosphere or the like can be given, and it is desirable to use an N 2 atmosphere or a mixed gas atmosphere of N 2 and H 2 .
  • the IZO film is crystallized into a
  • the IZO film When heat treatment is performed at a temperature lower than 500 ° C., the IZO film may not be sufficiently crystallized, and the light transmittance of the IZO film may not be sufficiently high. When heat treatment is performed at a temperature exceeding 1000 ° C., the IZO film is crystallized, but the light transmittance of the IZO film may not be sufficiently high. Further, when heat treatment is performed at a temperature exceeding 1000 ° C., the semiconductor layer under the IZO film may be deteriorated.
  • the crystal structure in the IZO film differs depending on the film formation conditions, heat treatment conditions, and the like.
  • the translucent electrode in terms of adhesiveness with the adhesive layer, is not limited to a material, but a crystalline material is preferable, and in particular, in the case of crystalline IZO, bixbite crystal. It may be IZO including an In 2 O 3 crystal having a structure, or IZO including an In 2 O 3 crystal having a hexagonal structure. In particular, IZO containing In 2 O 3 crystal having a hexagonal structure is preferable.
  • an IZO film crystallized by heat treatment has a better adhesion to the bonding layer 110 and the p-type semiconductor layer 106 than an amorphous IZO film, and thus is very effective in the embodiment of the present invention. It is.
  • ⁇ P-type electrode> 4 is an enlarged cross-sectional view of the p-type electrode 111 of the semiconductor light emitting device 1 according to the embodiment of the present invention shown in FIG.
  • the p-type electrode (one conductivity type electrode) 111 includes a translucent electrode 109, a bonding layer 110, and a bonding pad electrode 120, and is formed on the p-type semiconductor layer 106 and schematically. It is configured. Upper surface 109c of the transparent electrode 109 is covered by a protective film 10 made of SiO 2, a portion of the protective film 10 is being opened openings 10d formed, the upper surface of the transparent electrode 109 through the opening 10d Part of 109c is exposed.
  • the bonding layer 110 covers the upper surface 109c of the translucent electrode 109 exposed from the opening 10d with a substantially uniform film thickness, and the film thickness is increased on the outer peripheral side of the opening 10d. It is formed so as to cover the end portion 10c. In addition, an inclined surface 110c is formed on the outer peripheral portion 110d of the bonding layer 110 that covers the end portion 10c of the protective film 10 so that the film thickness gradually decreases toward the outer peripheral side.
  • the bonding pad electrode 120 includes a metal reflection layer 117 and a bonding layer 119 that are formed to be thicker than the maximum thickness of the bonding layer 110.
  • an inclined surface 119c is formed on the outer peripheral portion 120d of the bonding pad electrode 120 so that the film thickness gradually decreases toward the outer peripheral side.
  • An inclined surface 117c is formed on the outer peripheral portion of the metal reflective layer 117 so that the film thickness gradually decreases toward the outer peripheral side.
  • the metal reflective layer 117 is formed so as to cover the bonding layer 110.
  • the metal reflection layer 117 is formed so as to completely cover the leading edge of the inclined surface 110c of the bonding layer 110, that is, the boundary that forms the contour line when the bonding layer 110 is viewed in plan. .
  • the metal reflective layer 117 is formed so as to cover the bonding layer 110 and further extend to the outer peripheral side of the bonding layer 110, so any portion of the bonding layer 110 can be any metal reflective layer 117. It is possible to prevent exposure from below.
  • an inclined surface 119c is formed on the outer peripheral portion of the bonding layer 119 so that the film thickness gradually decreases toward the outer peripheral side.
  • the bonding layer 119 is formed so as to cover the metal reflective layer 117.
  • the bonding layer 119 is formed so as to completely cover the tip of the tip of the inclined surface 117c of the metal reflection layer 117, that is, the boundary that forms the contour line when the metal reflection layer 117 is viewed in plan. Yes. That is, since the bonding layer 119 is formed so as to cover the metal reflection layer 117 and project to the outer peripheral side of the metal reflection layer 117 when seen in a plan view, any portion of the metal reflection layer 117 can be bonded to the bonding layer. It is possible to prevent exposure from below 119.
  • the bonding layer 110 is formed with the inclined surface 110c that gradually decreases in thickness toward the outer peripheral side at the outer peripheral portion, and double-shielded from the outside by the metal reflective layer 117 and the bonding layer 119. Therefore, air or moisture outside the semiconductor light-emitting element 1 does not pass to the bonding layer 110 unless it passes through the bonding surface between the protective film 10 and the bonding layer 119 and the bonding surface between the protective film 10 and the metal reflective layer 117. The possibility that external air or moisture cannot enter the bonding layer 110 can be greatly reduced. As a result, the bonding layer 110 is not easily decomposed, and by improving the corrosion resistance of the bonding layer 110, the element lifetime of the semiconductor light emitting element can be extended.
  • the exposed upper surface 109c of the translucent electrode 109 is preferably a fresh surface from which impurities and defects are removed by wet etching. Thereby, the adhesiveness between the upper surface 109c of the translucent electrode 109 and the bonding layer 110 can be improved.
  • the bonding layer 110 shown in FIG. 1 is laminated between the translucent electrode 109 and the bonding pad electrode 120 in order to increase the bonding strength of the bonding pad electrode 120 to the translucent electrode 109.
  • the bonding layer 110 preferably has a light-transmitting property so that the light from the light-emitting layer 105 that is transmitted through the light-transmitting electrode 109 and irradiated onto the bonding pad electrode 120 is transmitted without loss.
  • the bonding layer 110 is at least selected from the group consisting of Al, Ti, V, Cr, Mn, Co, Zn, Ge, Zr, Nb, Mo, Ru, Hf, Ta, W, Re, Rh, Ir, and Ni. What consists of a kind of element is preferable. Thereby, joint strength and translucency can be exhibited simultaneously.
  • the bonding layer 110 is more preferably made of at least one element selected from the group consisting of Cr, Ti, W, Mo, Zr, Hf, Co, Rh, Ir, and Ni, and more preferably Cr, Ti, W, Mo. It is more preferable to use at least one element selected from the group consisting of Rh, Co, and Ni. In particular, by using a metal such as Cr, Ti, Mo, Ni, and Co, the bonding strength of the bonding pad electrode 120 to the translucent electrode 109 can be significantly increased.
  • the bonding layer 110 is preferably a thin film having a maximum thickness in the range of 10 to 400 mm. Thereby, the light from the light emitting layer 105 can be effectively transmitted without being blocked. In addition, when the maximum thickness is less than 10 mm, the strength of the bonding layer 110 is lowered, which is not preferable because the bonding strength of the bonding pad electrode 120 to the translucent electrode 109 is lowered.
  • the bonding pad electrode 120 is formed of a laminated body in which a metal reflective layer 117 and a bonding layer 119 are laminated in order from the translucent electrode 109 side.
  • the bonding pad electrode 120 may have a single-layer structure composed of only the metal reflective layer 117, and a barrier layer that enhances the strength of the entire bonding pad electrode 120 is inserted between the metal reflective layer 117 and the bonding layer 119. And it is good also as a three-layer structure.
  • the metal reflective layer 117 shown in FIG. 1 is preferably composed of a metal having high reflectance, and platinum group metals such as Ru, Rh, Pd, Os, Ir, and Pt, Al, Ag, Ti, and a small amount of these metals. It is more preferable to use an alloy including one kind. Thereby, the light from the light emitting layer 105 can be reflected effectively.
  • Al, Ag, Pt, and an alloy containing at least one of these metals are generally used as electrode materials, and are excellent in terms of easy availability and handling.
  • the metal reflective layer 117 is formed of a metal having a high reflectance, it is desirable that the maximum thickness is 20 to 3000 nm.
  • the metal reflection layer 117 is too thin, a sufficient reflection effect cannot be obtained. If it is too thick, there is no particular advantage, and only a long process time and material waste are caused. More desirably, the thickness is 50 to 1000 nm, and most desirably 100 to 500 nm.
  • the metal reflective layer 117 is in close contact with the bonding layer 110 in that the light from the light emitting layer 105 can be efficiently reflected and the bonding strength of the bonding pad electrode 120 can be increased. For this reason, in order for the bonding pad electrode 120 to obtain sufficient strength, the metal reflective layer 117 needs to be firmly bonded to the translucent electrode 109 through the bonding layer 110. At a minimum, a strength that does not cause peeling in the step of connecting the gold wire to the bonding pad by a general method is preferable. In particular, Rh, Pd, Ir, Pt, and an alloy containing at least one of these metals are preferably used as the metal reflective layer 117 in view of light reflectivity.
  • the reflectance of the bonding pad electrode 120 varies greatly depending on the constituent material of the metal reflective layer 117, but is preferably 60% or more. Further, it is preferably 80% or more, and more preferably 90% or more. The reflectance can be measured relatively easily with a spectrophotometer or the like. However, since the bonding pad electrode 120 itself has a small area, it is difficult to measure the reflectance. Therefore, a “dummy substrate” having a large area, for example, a glass substrate, is placed in the chamber when forming the bonding pad electrode, and at the same time, the same bonding pad electrode is formed on the dummy substrate and measured. it can.
  • the bonding pad electrode 120 can be made of only the above-described highly reflective metal. That is, the bonding pad electrode 120 may be composed only of the metal reflective layer 117. However, various types of structures using various materials are known as the bonding pad electrode 120, and even if the above-described metal reflective layer is newly provided on the semiconductor layer side (translucent electrode side) of these known ones. Alternatively, the lowermost layer on the semiconductor layer side of these known ones may be replaced with the above-described metal reflection layer.
  • the bonding layer 119 shown in FIG. 1 is preferably made of Au, Al, or an alloy containing at least one of these metals. Since Au and Al are metals that have good adhesion to gold balls that are often used as bonding balls, the use of Au, Al, or an alloy containing at least one of these metals improves adhesion to bonding wires. It can be excellent. Of these, Au is particularly desirable.
  • the maximum thickness of the bonding layer 119 is preferably in the range of 50 nm to 2000 nm, and more preferably 100 nm to 1500 nm. If it is too thin, the adhesion to the bonding ball will be poor, and if it is too thick, no particular advantage will be produced, and only the cost will increase.
  • the light directed toward the bonding pad electrode 120 is reflected by the metal reflective layer 117 on the lowermost surface (translucent electrode side surface) of the bonding pad electrode 120, and part of the light is scattered and travels in the lateral direction or the oblique direction.
  • the portion proceeds directly below the bonding pad electrode 120.
  • the light that is scattered and travels in the lateral direction or the oblique direction is extracted from the side surface of the semiconductor light emitting element 1 to the outside.
  • the light traveling in the direction immediately below the bonding pad electrode 120 is further scattered and reflected by the lower surface of the semiconductor light emitting device 1 and is externally transmitted through the side surface and the translucent electrode 109 (the portion where the bonding pad electrode does not exist). Is taken out.
  • the bonding pad electrode 120 can be formed anywhere as long as it is on the translucent electrode 109. For example, it may be formed at a position farthest from the n-type electrode 108 or may be formed at the center of the semiconductor light emitting device 1. However, if it is formed too close to the n-type electrode 108, a short circuit between the wires and between the balls occurs during bonding, which is not preferable. Further, the electrode area of the bonding pad electrode 120 is as large as possible, but the bonding operation is easy, but it prevents the light emission from being taken out. For example, covering an area that exceeds half the area of the chip surface hinders the extraction of light emission, and the output is significantly reduced.
  • the bonding work becomes difficult and the yield of the product is lowered.
  • it is preferably slightly larger than the diameter of the bonding ball, and generally has a circular shape with a diameter of 100 ⁇ m.
  • the same metal element may be incorporated, or a combination of different metal elements may be used.
  • the bonding pad electrode 120 may have a three-layer structure by inserting a barrier layer between the metal reflection layer 117 and the bonding layer 119.
  • the barrier layer has a role of enhancing the strength of the bonding pad electrode 120 as a whole, and is formed on the metal reflective layer of the bonding pad electrode 120, for example. For this reason, it is necessary to use a relatively strong metal material or to sufficiently increase the film thickness. Desirable materials are Ti, Cr or Al. Among these, Ti is desirable in terms of material strength.
  • the metal reflective layer 117 may also serve as the barrier layer.
  • a thick metal material having good reflectivity and mechanically strong it is not necessary to form a barrier layer.
  • the barrier layer is not always necessary.
  • the maximum thickness of the barrier layer is preferably 20 to 3000 nm. If the barrier layer is too thin, a sufficient strength strengthening effect cannot be obtained, and if it is too thick, no particular advantage is produced and only an increase in cost is caused. More desirably, the thickness is 50 to 1000 nm, and most desirably 100 to 500 nm.
  • FIG. 14 is a schematic cross-sectional view of the semiconductor light emitting device according to the embodiment of the present invention.
  • FIG. 16 is a schematic cross-sectional view of a laminated semiconductor layer constituting the semiconductor light-emitting element
  • FIG. 17 is an enlarged schematic cross-sectional view of a p-type electrode constituting the semiconductor light-emitting element shown in FIG. As shown in FIG.
  • the semiconductor light emitting device 1 includes a substrate 101, a laminated semiconductor layer 20 formed on the substrate 101, and a p-type electrode 111 ( One electrode) and an n-type electrode 108 (the other electrode) formed on the semiconductor layer exposed surface 104c formed by cutting out a part of the laminated semiconductor layer 20.
  • the laminated semiconductor layer 20 is obtained by laminating an n-type semiconductor layer 104, a light emitting layer 105, and a p-type semiconductor layer 106 in this order from the substrate 101 side.
  • the semiconductor light emitting device 1 of the present embodiment light emission is obtained from the light emitting layer 105 by applying a voltage between the p-type electrode 111 and the n-type electrode 108 and passing the current.
  • the semiconductor light emitting device 1 of the present embodiment is a face-up mount type light emitting device that extracts light from the side where the p-type electrode 111 is formed.
  • the semiconductor light emitting device of the seventh embodiment basically has a feature that the configuration in which the electrodes are installed on the upper surface of the laminated semiconductor layer 20 is different from that of the semiconductor light emitting device of the first embodiment. That is, in Embodiment 7, at least one of one electrode or the other electrode has a translucent electrode having a bonding recess on an upper surface, a bonding layer formed so as to cover the bonding recess, and the bonding There is provided a structure of a semiconductor light emitting device, comprising a bonding pad electrode formed so as to cover a layer and having an inclined surface formed on an outer peripheral portion with a gradually decreasing thickness toward the outside.
  • the configuration of the substrate constituting the semiconductor light emitting device and the laminated semiconductor layer having the light emitting layer can be basically configured in the same range as in the first embodiment.
  • a detailed description will be given to describe different features from the configuration of the semiconductor light emitting device of the first embodiment.
  • the p-type electrode 111 includes a translucent electrode 109, a bonding layer 110, and a bonding pad electrode 120.
  • a bonding recess 109 a is provided on the upper surface 109 c of the translucent electrode 109.
  • a transparent protective film 10 a is formed so as to cover the translucent electrode 109 in a region where the bonding recess 109 a is not formed on the upper surface 109 c of the translucent electrode 109.
  • the region where the bonding recess 109a is formed is an opening 10d in which a part of the transparent protective film 10a is opened.
  • a bonding layer 110 is formed on the bonding recess 109a exposed from the opening 10d so as to cover the bonding recess 109a, and a bonding pad electrode 120 is formed on the bonding layer 110 so as to cover the bonding layer 110.
  • the outer edge part of the joining layer 110 and the outer edge part of the bonding pad electrode 120 are arrange
  • the bonding pad electrode 120 includes an inclined surface 119c on the outer peripheral portion 120d whose thickness gradually decreases toward the outside.
  • the outer edge portion of the bonding pad electrode 120 is covered with the edge protection film 10b.
  • the translucent electrode 109 is provided on the upper surface 106c of the p-type semiconductor layer 106. As shown in FIG. 17, the upper surface 109c has a bonding recess 109a.
  • the depth of the bonding recess 109 a of the translucent electrode 109 is not particularly limited, but is preferably about 1/10 of the thickness of the translucent electrode 109.
  • the planar shape of the bonding recess 109a may be any shape such as a circular shape or a polygonal shape, and is not particularly limited. It is preferable that
  • the translucent electrode 109 is formed so as to cover almost the entire upper surface 106c of the p-type semiconductor layer 106 in plan view, but is limited to such a shape. Instead, it may be formed in a lattice shape or a tree shape with a gap. Further, the bonding recess 109 a of the translucent electrode 109 may be formed anywhere on the translucent electrode 109. For example, it may be formed at a position farthest from the n-type electrode 108 or may be formed at the center of the semiconductor light emitting device 1.
  • the bonding layer 110 is laminated between the translucent electrode 109 and the bonding pad electrode 120 in order to increase the bonding strength of the bonding pad electrode 120 to the translucent electrode 109. As shown in FIG. 17, the bonding layer 110 is continuously formed so as to cover the bonding recess 109a and the end portion 10c of the transparent protective film 10a. In the present embodiment, since the bonding layer 110 is embedded in the bonding recess 109a of the translucent electrode 109 and the opening 10d of the transparent protective film 10a, the translucent electrode 109 is formed. And a high bonding force between the bonding layer 110 can be obtained.
  • the thickness of the bonding layer 110 is substantially uniform on the inner wall surface of the bonding recess 109a of the translucent electrode 109 and on the inner wall surface of the opening 10d of the transparent protective film 10a. Then, outside the opening 10d, the thickness of the bonding layer 110 gradually decreases toward the outside, and an inclined surface 110c is formed on the outer peripheral portion 110d of the bonding layer 110.
  • the bonding layer 110 preferably has translucency.
  • the bonding layer 110 has a light-transmitting property
  • light from the light-emitting layer 105 irradiated to the bonding pad electrode 120 can be transmitted without loss.
  • part of light emitted from the light-emitting layer 105 is transmitted through the light-transmitting electrode 109 and the bonding layer 110 to be bonded to the bonding layer 110 and the bonding pad.
  • the light is reflected by the bonding pad electrode 120 (in this embodiment, the metal reflection layer 117) at the interface with the electrode 120.
  • the light reflected by the bonding pad electrode 120 is again introduced into the laminated semiconductor layer 20, and after repeated transmission and reflection, the light is reflected to the outside of the semiconductor light emitting device 1 from a location other than the formation region of the bonding pad electrode 120. It is taken out. Therefore, when the bonding layer 110 has a light transmitting property, light from the light emitting layer 105 can be efficiently extracted outside the semiconductor light emitting element 1.
  • the bonding layer 110 is at least selected from the group consisting of Al, Ti, V, Cr, Mn, Co, Zn, Ge, Zr, Nb, Mo, Ru, Hf, Ta, W, Re, Rh, Ir, and Ni. What consists of a kind of element is preferable. When the bonding layer 110 is made of the above-described material, the bonding strength of the bonding pad electrode 120 to the translucent electrode 109 can be improved and the translucency can be exhibited.
  • the bonding layer 110 is more preferably composed of at least one element selected from the group consisting of Cr, Ti, W, Mo, Zr, Hf, Co, Rh, Ir, and Ni.
  • the bonding pad electrode 120 to the translucent electrode 109 is made of at least one element selected from the group consisting of W, Mo, Rh, Co, and Ni.
  • a metal such as Cr, Ti, Mo, Ni, or Co as the material of the bonding layer 110, the bonding strength of the bonding pad electrode 120 to the translucent electrode 109 can be significantly increased.
  • the translucent electrode 109 is made of a metal oxide such as IZO or ITO and the bonding pad electrode 120 is made of Ag, Al, or the like,
  • Cr it is particularly preferable to use Cr that can provide excellent bondability to Ag and Al.
  • the bonding layer 110 is preferably a thin film having a maximum thickness in the range of 10 to 400 mm.
  • the maximum thickness of the bonding layer 110 is less than 10 mm, the strength of the bonding layer 110 is decreased, and thus the bonding strength of the bonding pad electrode 120 to the translucent electrode 109 is not preferable.
  • the bonding pad electrode 120 is formed of a laminated body in which a metal reflective layer 117 and a bonding layer 119 are laminated in order from the translucent electrode 109 side.
  • the bonding pad electrode 120 may have a single layer structure including only the bonding layer 119 or a single layer structure including only the metal reflection layer 117, and a barrier layer may be provided between the metal reflection layer 117 and the bonding layer 119. It may be inserted into a three-layer structure.
  • the metal elements constituting the bonding layer 110, the metal reflection layer 117, the bonding layer 119, and the barrier layer may contain the same metal element, or may be a combination of different metal elements.
  • the reflectance of the bonding pad electrode 120 varies greatly depending on the material constituting the metal reflective layer 117, but the reflectance is preferably 60% or more, more preferably 80% or more, It is even better if the reflectance is 90% or more.
  • the reflectance can be measured relatively easily with a spectrophotometer or the like.
  • the bonding pad electrode 120 itself has a small area, it is difficult to measure the reflectance. Therefore, for example, a “dummy substrate” made of a transparent glass and having a large area is placed in a chamber for forming the bonding pad electrode, and at the same time, the same bonding pad electrode is formed on the dummy substrate. It can be measured using a method such as measuring the reflectance of the bonding pad electrode formed thereon.
  • the bonding pad electrode 120 has a larger area because the bonding operation can be easily performed.
  • the larger the bonding pad electrode 120 is the more light extraction is hindered.
  • the bonding pad electrode 120 hinders light extraction, and thus the output is significantly reduced.
  • the area of the bonding pad electrode 120 is preferably a size that is slightly larger than the diameter of the bonding ball.
  • the upper surface has a diameter of about 100 ⁇ m, and the transparent protective film 10a side. It is preferably a substantially cylindrical shape having a diameter that increases as it approaches.
  • the metal reflective layer 117 is formed so as to cover the bonding layer 110. Further, an inclined surface 117c is formed on the outer peripheral portion of the metal reflective layer 117 so that the film thickness gradually decreases toward the outside. Therefore, the metal reflective layer 117 is formed so as to completely cover the most distal portion of the inclined surface 110c of the bonding layer 110 on the transparent protective film 10a side, that is, the boundary portion that forms the contour line when the bonding layer 110 is viewed in plan view. Has been. In other words, the metal reflection layer 117 is formed so as to cover the bonding layer 110 when viewed in plan and further protrude to the outside of the bonding layer 110, and any part of the bonding layer 110 is below the metal reflection layer 117. Is not exposed from.
  • the metal reflective layer 117 shown in FIG. 14 is made of a highly reflective metal, such as a platinum group metal such as Ru, Rh, Pd, Os, Ir, and Pt, Al, Ag, Ti, and at least one of these metals. It is preferable to be comprised with the alloy containing 1 type.
  • a platinum group metal such as Ru, Rh, Pd, Os, Ir, and Pt
  • Al, Ag, Ti and at least one of these metals. It is preferable to be comprised with the alloy containing 1 type.
  • the metal reflective layer 117 made of the above material the light from the light emitting layer 105 can be effectively reflected.
  • Al, Ag, Pt, and alloys containing at least one of these metals are excellent in terms of easy availability and handling.
  • Rh, Pd, Ir, Pt and an alloy containing at least one of these metals are preferably used as the metal reflective layer 117 from the viewpoint of light reflectivity.
  • the metal reflective layer 117 is preferably formed so that the maximum film thickness is larger than that of the bonding layer 110. By making the metal reflective layer 117 thicker than the bonding layer 110, the metal reflecting layer 117 covers the bonding layer 110 more reliably and completely. Further, it is desirable that the metal reflective layer 117 has a maximum thickness of 20 to 3000 nm. If the thickness of the metal reflective layer 117 is thinner than the above range, the reflection effect may not be obtained sufficiently. In addition, when the thickness of the metal reflection layer 117 is thicker than the above range, there is no particular advantage, and only a long process time and material waste are caused. The thickness of the metal reflective layer 117 is more desirably 50 to 1000 nm, and most desirably 100 to 500 nm.
  • the bonding layer 119 is formed so as to cover the metal reflective layer 117.
  • an inclined surface 119c is formed on the outer peripheral portion of the bonding layer 119 (that is, the outer peripheral portion 120d of the bonding pad electrode 120) so that the film thickness gradually decreases toward the outside. Accordingly, the bonding layer 119 completely covers the most distal portion of the inclined surface 117c of the metal reflective layer 117 on the transparent protective film 10a side, that is, the boundary forming the contour line when the metal reflective layer 117 is viewed in plan view. Is formed.
  • the bonding layer 119 is formed so as to cover the metal reflective layer 117 when seen in a plan view and further to the outside of the metal reflective layer 117, and any portion of the metal reflective layer 117 is formed on the bonding layer 119. It is not exposed from the bottom.
  • the bonding layer 119 shown in FIG. 14 is preferably made of Au, Al, or an alloy containing at least one of these metals. Since Au and Al are metals with good adhesion to gold balls that are often used as bonding balls, by using Au, Al or an alloy containing at least one of these metals as the bonding layer 119, It can be set as the bonding layer 119 excellent in adhesiveness with a bonding wire. Of these, Au is particularly desirable.
  • the maximum thickness of the bonding layer 119 is preferably formed to be thicker than that of the bonding layer 110 and the metal reflective layer 117. By making the bonding layer 119 thicker than the bonding layer 110 and the metal reflection layer 117, the metal reflection layer 117 is more reliably and completely covered by the bonding layer 119.
  • the maximum thickness of the bonding layer 119 is preferably in the range of 50 nm to 2000 nm, and more preferably 100 nm to 1500 nm. If the maximum thickness of the bonding layer 119 is too thin, adhesion to the bonding ball may be insufficient. Further, even if the maximum thickness of the bonding layer 119 is made larger than the above range, there is no particular advantage and only the cost is increased.
  • the barrier layer is disposed between the metal reflective layer 117 and the bonding layer 119 and enhances the strength of the entire bonding pad electrode 120.
  • the barrier layer is made of a relatively strong metal material, or has a sufficiently thick film thickness.
  • As the material for the barrier layer Ti, Cr, Al, or the like can be used, but it is desirable to use Ti having excellent strength.
  • the maximum thickness of the barrier layer is preferably 20 to 3000 nm. If the thickness of the barrier layer is too thin, sufficient strength strengthening effects may not be obtained. In addition, if the thickness of the barrier layer is too thick, there is no particular advantage and only an increase in cost is caused.
  • the thickness of the barrier layer is more preferably 50 to 1000 nm, and most preferably 100 to 500 nm.
  • the metal reflective layer 117 when the metal reflective layer 117 is mechanically strong, it is not necessary to form a barrier layer.
  • the metal reflective layer 117 is made of Al or Pt, the barrier layer is not always necessary.
  • the transparent protective film 10a protects the translucent electrode 109 and the bonding layer 110. As shown in FIGS. 14 and 15, the transparent protective film 10 a is formed so as to cover a region where the bonding recess 109 a is not formed on the upper surface 109 c of the translucent electrode 109, and the bonding recess 109 a is formed. The area that is present is the opening 10d. In the present embodiment, as shown in FIG. 17, the bonding layer 110 is formed in contact with the inner wall surface of the opening 10d, and the outer edge portion of the bonding layer 110 is disposed on the transparent protective film 10a.
  • the transparent protective film 10a prevents contact of air or moisture in the portion of the bonding layer 110 that is in contact with the transparent protective film 10a.
  • the outer edges of the metal reflection layer 117 and the bonding layer 119 constituting the bonding pad electrode 120 are disposed in contact with the transparent protective film 10a.
  • the film 10a and the bonding pad electrode 120 surround the entire outer surface of the bonding layer 110 that is not in contact with the translucent electrode 109, and the contact between the bonding layer 110 and air or moisture is effectively prevented.
  • the transparent protective film 10a is preferably made of a material that is transparent and has excellent adhesion to each of the translucent electrode 109, the bonding layer 110, and the bonding pad electrode 120.
  • the transparent protective film 10a is made of SiO 2. It is preferable that The thickness of the transparent protective film 10a is preferably 20 to 500 nm, and more preferably 50 to 300 nm. If the thickness of the transparent protective film 10a is less than the above range, the effect of protecting the translucent electrode 109 and the bonding layer 110 may not be sufficiently obtained. On the other hand, when the thickness of the transparent protective film 10a exceeds the above range, the transparency may be deteriorated and the light extraction property may be hindered.
  • the thickness of the transparent protective film 10a exceeds the above range, the depth obtained by combining the depth of the opening 10d and the depth of the bonding recess 109a becomes deep, and the adhesion between the inner wall surface of the opening 10d and the bonding layer 110 is increased. May cause trouble.
  • the edge protective film 10b prevents contact between the bonding layer 110 and air or moisture, and prevents the bonding pad electrode 120 from peeling from the semiconductor light emitting element 1, thereby improving the bonding force of the bonding pad electrode 120. is there.
  • the edge protective film 10 b has a substantially donut shape that exposes the central portion of the bonding pad electrode 120 when viewed in plan.
  • the edge protective film 10b extends over a portion that becomes a joint between the outer edge (contour line) of the bonding pad electrode 120 and the transparent protective film 10a when viewed in plan. It is arranged and covers the outer edge portion of the bonding pad electrode 120. Therefore, in the present embodiment, as shown in FIG. 17, the outer edge portion of the bonding pad electrode 120 is sandwiched between the transparent protective film 10a and the edge protective film 10b.
  • the effect of providing the edge protective film 10b increases as the area of the edge protective film 10b increases with the boundary between the bonding pad electrode 120 and the transparent protective film 10a as the center.
  • the edge protection film 10b when the area of the edge protection film 10b is increased, the area of the bonding pad electrode 120 exposed from the edge protection film 10b is reduced, which may hinder the workability of the bonding work, or the edge protection film 10b.
  • the transparency of the region where the bonding pad electrode 120 is not formed may be lowered, and the light extraction property may be hindered. Therefore, it is preferable that the edge protection film 10b completely covers the boundary between the bonding pad electrode 120 and the transparent protection film 10a and completely exposes the top of the bonding pad electrode 120.
  • the edge protection film 10b preferably has a width of 5 to 10 ⁇ m with the boundary portion between the bonding pad electrode 120 and the edge protection film 10b as the center.
  • the edge protective film 10b is preferably made of a material that is transparent and has excellent adhesion to the transparent protective film 10a and the bonding pad electrode 120, and is formed of the same material as the transparent protective film 10a. More preferred. Specifically, it is possible to those made of transparent protective film 10a and the edge protection film 10b of SiO 2. When the edge protective film 10b and the transparent protective film 10a are formed of the same material, the adhesion between the edge protective film 10b and the transparent protective film 10a becomes very good. The effect by providing can be further improved.
  • Embodiment 12 26 to 29 are diagrams showing an example of the semiconductor light emitting device of the present invention.
  • FIG. 26 is a schematic sectional view of the semiconductor light emitting device
  • FIG. 27 is a schematic plan view of the semiconductor light emitting device shown in FIG.
  • FIG. 28 is an enlarged schematic sectional view of a laminated semiconductor layer constituting the semiconductor light emitting device shown in FIG.
  • FIG. 29 is a diagram for explaining the electrodes constituting the semiconductor light emitting device shown in FIG. 26.
  • FIG. 29A is an enlarged schematic cross-sectional view of a p-type electrode
  • FIG. It is an expanded sectional schematic diagram of an n-type electrode. As shown in FIG.
  • the semiconductor light emitting device 1 of the present embodiment includes a substrate 101, a laminated semiconductor layer 20 formed on the substrate 101, and a p-type electrode 111 (on the upper surface 106c of the laminated semiconductor layer 20).
  • a p-type electrode 111 on the upper surface 106c of the laminated semiconductor layer 20.
  • the laminated semiconductor layer 20 is formed by laminating an n-type semiconductor layer 104, a light emitting layer 105, and a p-type semiconductor layer 106 in this order from the substrate 101 side.
  • the semiconductor light emitting device 1 of this embodiment light emission is obtained from the light emitting layer 105 by applying a voltage between the p-type electrode 111 and the n-type electrode 108 and passing a current.
  • the semiconductor light emitting device 1 of the present embodiment is a face-up mount type light emitting device that extracts light from the side where the p-type electrode 111 is formed.
  • the semiconductor light emitting device of the twelfth embodiment is basically different from the semiconductor light emitting device of the first embodiment in that the configuration in which the electrodes are installed on the upper surface of the laminated semiconductor layer 20 is different. That is, in Embodiment 12, either one or both of the one electrode and the other electrode are in contact with the upper surface of the stacked semiconductor layer or the exposed surface of the semiconductor layer, and the ohmic contact layer is formed.
  • a structure of a semiconductor light emitting element comprising: a bonding layer formed on the bonding layer; and a bonding pad electrode formed so as to cover the bonding layer.
  • the configuration of the substrate constituting the semiconductor light emitting device and the laminated semiconductor layer having the light emitting layer is basically configured in the same range as the first embodiment and the seventh embodiment. Can do. In the following, a detailed description will be given in order to describe features different from the configurations of the semiconductor light emitting devices of the first embodiment and the seventh embodiment.
  • the p-type electrode 111 includes a translucent electrode 109, an ohmic bonding layer 9, a bonding layer 110, and a bonding pad electrode 120.
  • the translucent electrode 109 is provided with a hole 109a in which the upper surface 106c of the laminated semiconductor layer 20 is exposed on the bottom surface 109b.
  • a protective film 10a is formed so as to cover the translucent electrode 109 in a region where the hole 109a is not formed in the upper surface 109c of the translucent electrode 109. Has been.
  • the region where the hole 109a is formed is an opening 10d in which a part of the protective film 10a is opened.
  • An ohmic junction layer 9 is formed on the upper surface 106c of the laminated semiconductor layer 20 exposed from the opening 10d (the bottom surface 109b of the hole 109a), and is ohmically joined to the upper surface 106c of the laminated semiconductor layer 20. Yes. Further, as shown in FIG. 29A, a bonding layer 110 is formed on the ohmic bonding layer 9 so as to cover the ohmic bonding layer 9, and bonding is performed on the bonding layer 110 so as to cover the bonding layer 110. A pad electrode 120 is formed.
  • the n-type electrode 108 is formed on the exposed surface 104c of the n-type semiconductor layer 104 as shown in FIG.
  • the exposed surface 104c of the n-type semiconductor layer 104 is formed by cutting away a part of the light emitting layer 105 and the p semiconductor layer 106 by means such as etching.
  • a protective film 10 a having an opening 10 d is formed on the exposed surface 104 c of the n-type semiconductor layer 104.
  • An ohmic junction layer 9 is formed on the exposed surface 104 c of the n-type semiconductor layer 104 exposed from the opening 10 d and is in ohmic contact with the n-type semiconductor layer 104.
  • a bonding layer 110 is formed on the ohmic bonding layer 9 so as to cover the ohmic bonding layer 9, and bonding is performed on the bonding layer 110 so as to cover the bonding layer 110.
  • a pad electrode 120 is formed. Therefore, the n-type electrode 108 is the same as the p-type electrode 111 except that the translucent electrode 109 is not provided.
  • the outer edge portion of the electrode 120 (the metal reflection layer 117 and the bonding layer 119) is disposed on the protective film 10a.
  • the bonding pad electrode 120 includes an inclined surface 119c on the outer peripheral portion 120d that gradually decreases in thickness toward the outside.
  • the outer edge portion of the bonding pad electrode 120 is covered with the edge protection film 10b.
  • the translucent electrode 109 is provided on the upper surface 106c of the p-type semiconductor layer 106, as shown in FIG. 26, and the upper surface 106c of the laminated semiconductor layer 20 is exposed on the bottom surface 109b, as shown in FIG.
  • the hole 109a is formed.
  • the planar shape of the hole 109a of the translucent electrode 109 can be any shape such as a circular shape or a polygonal shape, and is not particularly limited. However, in order to facilitate the bonding operation, as shown in FIG. Moreover, it is preferable that it is circular.
  • the hole 109a of the translucent electrode 109 may be formed anywhere on the upper surface 106c of the p-type semiconductor layer 106, and corresponds to the position where the ohmic junction layer 9, the junction layer 110, and the bonding pad electrode 120 are formed. Provided. For example, it may be formed at a position farthest from the n-type electrode 108 or may be formed at the center of the semiconductor light emitting device 1. However, if it is formed too close to the n-type electrode 108, a short circuit between the wires and between the balls occurs when the wire is bonded to the bonding pad electrode 120 formed on the hole 109a. . Further, as shown in FIGS.
  • the translucent electrode 109 is formed so as to cover almost the entire upper surface 106c of the p-type semiconductor layer 106 in plan view.
  • the present invention is not limited to this, and it may be formed in a lattice shape or a tree shape with a gap.
  • the translucent electrode 109 has a small contact resistance with the p-type semiconductor layer 106, the ohmic junction layer 9, and the junction layer 110. Furthermore, the translucent electrode 109 is preferably excellent in light transmissivity in order to efficiently extract light from the light emitting layer 105 to the side where the p-type electrode 111 is formed. Furthermore, the translucent electrode 109 preferably has excellent conductivity in order to diffuse current uniformly over the entire surface of the p-type semiconductor layer 106.
  • a conductive oxide containing any one of In, Zn, Al, Ga, Ti, Bi, Mg, W, Ce, Sn, and Ni it is preferable to use a light-transmitting conductive material selected from the group consisting of any one of zinc sulfide and chromium sulfide.
  • the conductive oxide examples include ITO (indium tin oxide (In 2 O 3 —SnO 2 )), IZO (indium zinc oxide (In 2 O 3 —ZnO)), and AZO (aluminum zinc oxide (ZnO—Al 2 O 3 )), GZO (gallium zinc oxide (ZnO—Ga 2 O 3 )), fluorine-doped tin oxide, titanium oxide, or the like is preferably used.
  • Translucent electrode 109 if made of a crystallized IZO, may be a IZO containing an In 2 O 3 crystal having a bixbyite crystal structure, including In 2 O 3 crystal having a hexagonal crystal structure It may be IZO. In particular, IZO containing In 2 O 3 crystal having a hexagonal structure is preferable.
  • a crystallized IZO film is very preferable because it has better adhesion to the p-type semiconductor layer 106 than an amorphous IZO film.
  • the ZnO concentration in IZO is preferably 1 to 20% by mass, and more preferably 5 to 15% by mass. 10% by mass is particularly preferable.
  • the film thickness of the IZO film is preferably in the range of 35 nm to 10000 nm (10 ⁇ m) at which low specific resistance and high light transmittance can be obtained. Furthermore, from the viewpoint of production cost, the thickness of the IZO film is preferably 1000 nm (1 ⁇ m) or less.
  • the ohmic junction layer 9 constituting the p-type electrode 111 is provided on the upper surface 106 c of the laminated semiconductor layer 20 and is in ohmic contact with the p-type semiconductor layer 106.
  • the ohmic junction layer 9 constituting the n-type electrode 108 is provided on the exposed surface 104c of the n-type semiconductor layer 104, and is in ohmic contact with the n-type semiconductor layer 104. ing. Further, as shown in FIG.
  • the ohmic junction layer 9 constituting the p-type electrode 111 is formed on the upper surface 106c of the laminated semiconductor layer 20, the hole 109a of the translucent electrode 109, and the opening of the protective film 10a. It is formed continuously so as to cover the end portion 10c of the portion 10d.
  • the ohmic junction layer 9 constituting the n-type electrode 108 covers the exposed surface 104c of the n-type semiconductor layer 104 and the end 10c of the opening 10d of the protective film 10a. Are formed continuously.
  • the thickness of the ohmic bonding layer 9 is substantially uniform in the opening 10d of the protective film 10a and on the inner wall surface of the opening 10d. The thickness of the ohmic junction layer 9 is gradually reduced toward the outside outside the opening 10d, and an inclined surface is formed on the outer peripheral portion of the ohmic junction layer 9.
  • the ohmic junction layer 9 preferably has a low contact resistance with the p-type semiconductor layer 106, the n-type semiconductor layer 104, or the junction layer 110.
  • the ohmic junction layer 9 is preferably excellent in light transmittance in order to efficiently extract light from the light emitting layer 105 to the side where the p-type electrode 111 is formed. From the above, as the material constituting the ohmic junction layer 9, the same material as that constituting the translucent electrode 109 can be preferably used.
  • a crystallized structure for the ohmic bonding layer 9 in terms of adhesiveness to the bonding layer 110 and translucency.
  • a translucent electrode for example, ITO, IZO, etc.
  • the ohmic junction layer 9 may be an IZO containing an In 2 O 3 crystal having a bixbite crystal structure, or a hexagonal crystal structure, similar to the translucent electrode 109.
  • IZO containing In 2 O 3 crystal of N may be used.
  • IZO containing In 2 O 3 crystal having a hexagonal structure is preferable.
  • a crystallized IZO film is very preferable because it has better adhesion to the bonding layer 110 and the p-type semiconductor layer 106 than an amorphous IZO film.
  • the thickness of the ohmic bonding layer 9 is preferably in the range of 2 nm to 300 nm, preferably in the range of 50 nm to 250 nm, in which sufficient strength is obtained that is difficult to break and low resistivity and high light transmittance can be obtained. It is more preferable.
  • the bonding layer 110 is laminated between the ohmic bonding layer 9 and the bonding pad electrode 120 in order to increase the bonding strength of the bonding pad electrode 120 to the ohmic bonding layer 9.
  • the bonding layer 110 constituting the p-type electrode 111 is continuously formed in a concave shape so as to cover the ohmic bonding layer 9 and the end 10c of the opening 10d of the protective film 10a. Is formed. As a result, a high bonding force between the ohmic bonding layer 9 and the protective film 10a and the bonding layer 110 can be obtained. Also, as shown in FIG.
  • the bonding layer 110 constituting the n-type electrode 108 is continuous in a concave shape so as to cover the ohmic bonding layer 9 and the end 10c of the opening 10d of the protective film 10a. Is formed. As a result, a high bonding force between the ohmic bonding layer 9 and the protective film 10a and the bonding layer 110 can be obtained.
  • the thickness of the bonding layer 110 is substantially uniform in the opening 10d of the protective film 10a and on the inner wall surface of the opening 10d. Then, outside the opening 10d, the thickness of the bonding layer 110 gradually decreases toward the outside, and an inclined surface 110c is formed on the outer peripheral portion 110d of the bonding layer 110.
  • the bonding layer 110 preferably has a light-transmitting property.
  • the bonding layer 110 has a light-transmitting property
  • the light from the light emitting layer 105 irradiated to the bonding pad electrode 120 in the p-type electrode 111 can be transmitted without loss. More specifically, when the bonding layer 110 has a light-transmitting property, part of light emitted from the light-emitting layer 105 is transmitted through the ohmic bonding layer 9 and the bonding layer 110 constituting the p-type electrode 111, and The light is reflected by the bonding pad electrode 120 (in this embodiment, the metal reflection layer 117) at the interface between the bonding layer 110 and the bonding pad electrode 120.
  • the light reflected by the bonding pad electrode 120 of the p-type electrode 111 is again introduced into the laminated semiconductor layer 20, and after repeating transmission and reflection, the light other than the region where the bonding pad electrode 120 of the p-type electrode 111 is formed Are taken out of the semiconductor light-emitting element 1 from Therefore, when the bonding layer 110 constituting the p-type electrode 111 has a light transmitting property, the light from the light emitting layer 105 can be extracted to the outside of the semiconductor light emitting device 1 more efficiently.
  • the bonding layer 110 is at least selected from the group consisting of Al, Ti, V, Cr, Mn, Co, Zn, Ge, Zr, Nb, Mo, Ru, Hf, Ta, W, Re, Rh, Ir, and Ni. It is preferable that it consists of a kind of element. When the bonding layer 110 is made of the above-described material, the bonding strength of the bonding pad electrode 120 to the ohmic bonding layer 9 can be improved, and at the same time, the translucency can be exhibited.
  • the bonding layer 110 is more preferably composed of at least one element selected from the group consisting of Cr, Ti, W, Mo, Zr, Hf, Co, Rh, Ir, and Ni.
  • the bonding pad electrode 120 to the ohmic bonding layer 9 can be significantly increased.
  • the ohmic bonding layer 9 is made of a metal oxide such as IZO or ITO and the bonding pad electrode 120 is made of Ag, Al, or the like, In particular, it is particularly preferable to use Cr that can provide excellent bondability to Ag and Al.
  • the bonding layer 110 is preferably a thin film having a maximum thickness in the range of 10 to 400 mm.
  • the maximum thickness of the bonding layer 110 is lowered, which is not preferable because the bonding strength of the bonding pad electrode 120 to the ohmic bonding layer 9 is lowered.
  • the bonding pad electrode 120 is formed of a stacked body in which a metal reflective layer 117 and a bonding layer 119 are stacked in this order from the translucent electrode 109 side.
  • the bonding pad electrode 120 may have a single layer structure including only the bonding layer 119 or a single layer structure including only the metal reflection layer 117, and a barrier layer may be provided between the metal reflection layer 117 and the bonding layer 119. It may be inserted into a three-layer structure.
  • the metal elements constituting the bonding layer 110, the metal reflection layer 117, the bonding layer 119, and the barrier layer may contain the same metal element, or may be a combination of different metal elements.
  • the reflectance of the bonding pad electrode 120 varies greatly depending on the material constituting the metal reflective layer 117, but the reflectance is preferably 60% or more, more preferably 80% or more, It is even better if the reflectance is 90% or more.
  • the reflectance can be measured relatively easily with a spectrophotometer or the like.
  • the bonding pad electrode 120 itself has a small area, it is difficult to measure the reflectance. Therefore, for example, a “dummy substrate” made of a transparent glass and having a large area is placed in a chamber for forming the bonding pad electrode, and at the same time, the same bonding pad electrode is formed on the dummy substrate. It can be measured using a method such as measuring the reflectance of the bonding pad electrode formed thereon.
  • the area of the bonding pad electrode 120 that constitutes the p-type electrode 111 and the n-type electrode 108 is preferably a size that is slightly larger than the diameter of the bonding ball. It is preferably about 100 ⁇ m, and has a substantially cylindrical shape with a diameter increasing as it approaches the protective film 10a side.
  • the metal reflective layer 117 is formed so as to cover the bonding layer 110.
  • an inclined surface 117c is formed so that the film thickness gradually decreases toward the outside. Therefore, the metal reflective layer 117 is formed so as to completely cover the most distal portion of the inclined surface 110c of the bonding layer 110 on the protective film 10a side, that is, the boundary that forms the contour line when the bonding layer 110 is viewed in plan. ing.
  • the metal reflection layer 117 is formed so as to cover the bonding layer 110 when viewed in plan and further protrude to the outside of the bonding layer 110, and any part of the bonding layer 110 is below the metal reflection layer 117. Is not exposed from.
  • the metal reflection layer 117 is made of a metal having a high reflectance, and is an alloy containing platinum group metals such as Ru, Rh, Pd, Os, Ir, and Pt, Al, Ag, Ti, and at least one of these metals. It is preferable that it is comprised.
  • the metal reflective layer 117 made of the above material the light from the light emitting layer 105 can be effectively reflected by the p-type electrode 111.
  • Al, Ag, Pt, and alloys containing at least one of these metals are excellent in terms of easy availability and handling.
  • Rh, Pd, Ir, Pt and an alloy containing at least one of these metals are preferably used as the metal reflective layer 117 from the viewpoint of light reflectivity.
  • the metal reflective layer 117 is preferably formed so that the maximum film thickness is larger than that of the bonding layer 110. By making the metal reflective layer 117 thicker than the bonding layer 110, the metal reflecting layer 117 covers the bonding layer 110 more reliably and completely. Further, it is desirable that the metal reflective layer 117 has a maximum thickness of 20 to 3000 nm. If the thickness of the metal reflective layer 117 is thinner than the above range, the reflection effect may not be obtained sufficiently. In addition, when the thickness of the metal reflection layer 117 is thicker than the above range, there is no particular advantage, and only a long process time and material waste are caused. The thickness of the metal reflective layer 117 is more desirably 50 to 1000 nm, and most desirably 100 to 500 nm.
  • the bonding layer 119 is formed so as to cover the metal reflective layer 117.
  • an inclined surface 119c is formed on the outer peripheral portion of the bonding layer 119 (that is, the outer peripheral portion 120d of the bonding pad electrode 120) so that the film thickness gradually decreases toward the outside. Therefore, the bonding layer 119 is formed so as to completely cover the most distal portion of the inclined surface 117c of the metal reflection layer 117 on the protective film 10a side, that is, the boundary portion that forms the contour line when the metal reflection layer 117 is viewed in plan view. Has been.
  • the bonding layer 119 is formed so as to cover the metal reflective layer 117 when seen in a plan view and further to the outside of the metal reflective layer 117, and any portion of the metal reflective layer 117 is formed on the bonding layer 119. It is not exposed from the bottom.
  • the bonding layer 119 shown in FIG. 26 is preferably made of Au, Al, or an alloy containing at least one of these metals. Since Au and Al are metals with good adhesion to gold balls that are often used as bonding balls, by using Au, Al or an alloy containing at least one of these metals as the bonding layer 119, It can be set as the bonding layer 119 excellent in adhesiveness with a bonding wire. Of these, Au is particularly desirable.
  • the maximum thickness of the bonding layer 119 is preferably formed to be thicker than that of the bonding layer 110 and the metal reflective layer 117. By making the bonding layer 119 thicker than the bonding layer 110 and the metal reflection layer 117, the bonding layer 119 covers the bonding layer 110 and the metal reflection layer 117 more reliably and completely by the bonding layer 119. It will be a thing.
  • the maximum thickness of the bonding layer 119 is preferably in the range of 50 nm to 2000 nm, and more preferably 100 nm to 1500 nm. If the maximum thickness of the bonding layer 119 is too thin, adhesion to the bonding ball may be insufficient. Further, even if the maximum thickness of the bonding layer 119 is made larger than the above range, there is no particular advantage and only the cost is increased.
  • the barrier layer is disposed between the metal reflective layer 117 and the bonding layer 119 and enhances the strength of the entire bonding pad electrode 120.
  • the barrier layer is made of a relatively strong metal material, or has a sufficiently thick film thickness.
  • As the material for the barrier layer Ti, Cr, Al, or the like can be used, but it is desirable to use Ti having excellent strength.
  • the maximum thickness of the barrier layer is preferably 20 to 3000 nm. If the thickness of the barrier layer is too thin, sufficient strength strengthening effects may not be obtained. In addition, if the thickness of the barrier layer is too thick, there is no particular advantage and only an increase in cost is caused.
  • the thickness of the barrier layer is more preferably 50 to 1000 nm, and most preferably 100 to 500 nm.
  • the metal reflective layer 117 when the metal reflective layer 117 is mechanically strong, it is not necessary to form a barrier layer.
  • the metal reflective layer 117 is made of Al or Pt, the barrier layer is not always necessary.
  • the protective film 10 a protects the translucent electrode 109 and the bonding layer 110. As shown in FIGS. 26 and 27, the protective film 10 a is formed so as to cover a region where the hole 109 a is not formed on the upper surface 109 c of the translucent electrode 109 and the exposed surface 104 c of the n-type semiconductor layer 104. The region where the ohmic junction layer 9 of the p-type electrode 111 is formed (the region where the hole 109a is formed) and the region where the ohmic junction layer 9 of the n-type electrode 108 is formed serve as the opening 10d. Yes.
  • the ohmic junction layer 9 is formed in contact with the inner wall surface of the opening 10d, and the outer edge portion of the ohmic junction layer 9 is formed.
  • the protective film 10a is disposed in contact with the protective film 10a, and the protective film 10a prevents contact of air or moisture in a portion of the ohmic bonding layer 9 that is in contact with the protective film 10a.
  • FIGS. 29A and 29B the ohmic junction layer 9 is formed in contact with the inner wall surface of the opening 10d, and the outer edge portion of the ohmic junction layer 9 is formed.
  • the protective film 10a is disposed in contact with the protective film 10a, and the protective film 10a prevents contact of air or moisture in a portion of the ohmic bonding layer 9 that is in contact with the protective film 10a.
  • the outer edge portion of the bonding layer 110, the metal reflective layer 117 constituting the bonding pad electrode 120, and the outer edge portion of the bonding layer 119 are The protective film 10a is disposed in contact with the protective film 10a, and the protective film 10a and the bonding pad electrode 120 surround the entire outer surface of the bonding layer 110 that is not in contact with the ohmic bonding layer 9, and the bonding layer 110 and air or moisture. Is effectively prevented. Further, as shown in FIG. 26, the protective film 10a is continuously formed on the side surface formed by cutting out part of the light emitting layer 105 and the p semiconductor layer 106 and the side surface of the translucent electrode 109. Has been.
  • the protective film 10a is made of a material that is transparent and has excellent adhesion to the n-type semiconductor layer 104, the translucent electrode 109, the ohmic bonding layer 9, the bonding layer 110, and the bonding pad electrode 120. More specifically, it is preferably made of SiO 2 .
  • the thickness of the protective film 10a is preferably 20 to 500 nm, and more preferably 50 to 300 nm. If the thickness of the protective film 10a is less than the above range, the effect of protecting the translucent electrode 109, the n-type semiconductor layer 104, the ohmic bonding layer 9, and the bonding layer 110 may not be sufficiently obtained.
  • the thickness of the protective film 10a exceeds the above range, the transparency may be lowered, and the light extraction property may be hindered. Moreover, when the thickness of the protective film 10a exceeds the above range, the depth of the opening 10d becomes deep, and there is a risk that the adhesion between the inner wall surface of the opening 10d and the ohmic bonding layer 9 may be hindered.
  • the edge protective film 10b prevents contact between the bonding layer 110 and air or moisture, and prevents the bonding pad electrode 120 from peeling from the semiconductor light emitting element 1, thereby improving the bonding force of the bonding pad electrode 120. is there. As shown in FIGS. 26 and 27, the edge protection film 10b is formed over the entire region excluding the region where the central portion of the bonding pad electrode 120 is exposed when viewed in plan. Further, as shown in FIGS. 27, 29 (a), and 29 (b), the edge protective film 10b has an outer edge (contour line) of the bonding pad electrode 120 and the protective film 10a when viewed in plan. Are arranged across the seam of the bonding pad electrode 120 and cover the outer edge of the bonding pad electrode 120.
  • the outer edge portion of the bonding pad electrode 120 is sandwiched between the protective film 10a and the edge protective film 10b. Yes. Further, as shown in FIG. 26, the edge protection film 10 b protects the side surface formed by cutting out part of the light emitting layer 105 and the p semiconductor layer 106 and the side surface of the translucent electrode 109. It is formed continuously through the film 10a.
  • the effect of providing the edge protective film 10b increases as the area of the edge protective film 10b increases with the boundary between the bonding pad electrode 120 and the protective film 10a as the center.
  • the edge protection film 10b when the area of the edge protection film 10b is increased, the area of the bonding pad electrode 120 exposed from the edge protection film 10b is reduced, which may hinder the workability of the bonding work, or the edge protection film 10b.
  • the transparency of the region where the bonding pad electrode 120 is not formed may be lowered, and the light extraction property may be hindered. Therefore, it is preferable that the edge protective film 10b completely covers the boundary between the bonding pad electrode 120 and the protective film 10a and exposes the top of the bonding pad electrode 120.
  • the edge protection film 10b preferably has a width of 2 ⁇ m or more with the boundary portion between the bonding pad electrode 120 and the edge protection film 10b as the center.
  • the edge protective film 10b is preferably made of a material that is transparent and has excellent adhesion to the protective film 10a and the bonding pad electrode 120, and more preferably formed of the same material as the protective film 10a.
  • the protective film 10a and the edge protection film 10b may be those composed of SiO 2.
  • the edge protection film 10b and the protection film 10a are formed of the same material, the adhesion between the edge protection film 10b and the protection film 10a becomes very good, so the edge protection film 10b is provided. The effect by this can be further improved.
  • a method for manufacturing a semiconductor light-emitting device includes a step of forming a laminated semiconductor layer including a light-emitting layer on a substrate, and forming a semiconductor layer exposed surface by cutting out part of the laminated semiconductor layer. And an electrode forming step of forming one (one conductivity type) electrode and the other (other conductivity type) electrode on the upper surface of the laminated semiconductor layer and the exposed surface of the semiconductor layer.
  • the step of forming the laminated semiconductor layer including the light emitting layer includes a buffer layer forming step, a base layer forming step, an n-type semiconductor layer forming step, a light emitting layer forming step, and a p-type semiconductor layer forming step. Further, an n-type electrode is formed in the n-type electrode forming step. Further, in the p-type electrode forming step, the p-type electrode is formed using the mask forming step and the bonding electrode forming step. In the first embodiment, the translucent electrode forming step is performed in the p-type electrode forming step after the p-type semiconductor layer forming step.
  • a substrate 101 such as a sapphire substrate is prepared and pre-processed.
  • the pretreatment can be performed by, for example, a method in which the substrate 101 is disposed in a chamber of a sputtering apparatus and sputtering is performed before the buffer layer 102 is formed.
  • a pretreatment for cleaning the upper surface may be performed by exposing the substrate 101 to Ar or N 2 plasma in the chamber. By causing plasma such as Ar gas or N 2 gas to act on the substrate 101, organic substances and oxides attached to the upper surface of the substrate 101 can be removed.
  • the buffer layer 102 is stacked on the upper surface of the substrate 101 by sputtering.
  • the ratio of the nitrogen flow rate to the flow rate of the nitrogen source material and the inert gas in the chamber is 50% to 100%, preferably 75%. It is desirable to do so.
  • the buffer layer 102 having columnar crystals (polycrystal) is formed by sputtering, the ratio of the nitrogen flow rate to the nitrogen source flow rate in the chamber to the flow rate of the inert gas is preferably 1% to 50% for the nitrogen source. It is desirable to be 25%.
  • the buffer layer 102 can be formed not only by the sputtering method described above but also by the MOCVD method.
  • a single crystal base layer 103 is formed on the upper surface of the substrate 101 on which the buffer layer 102 is formed.
  • the base layer 103 is desirably formed by sputtering or sputtering.
  • the apparatus can have a simple configuration as compared with the MOCVD method, the MBE method, or the like.
  • a reactive sputtering method in which a group V material such as nitrogen is circulated in the reactor.
  • the underlayer 103 is formed by sputtering, it is possible to use a group III nitride semiconductor as a target material as a raw material and perform sputtering by plasma of an inert gas such as Ar gas.
  • the group III metal alone and the mixture thereof used as the target material in can be highly purified as compared with the group III nitride semiconductor. For this reason, in the reactive sputtering method, the crystallinity of the underlying layer 103 to be formed can be further improved.
  • the temperature of the substrate 101 when the base layer 103 is formed is preferably 800 ° C. or higher, more preferably 900 ° C. or higher, and 1000 ° C. or higher. Most preferably. This is because by increasing the temperature of the substrate 101 when forming the base layer 103, atom migration easily occurs and dislocation looping easily proceeds.
  • the temperature of the substrate 101 when the base layer 103 is formed needs to be lower than the temperature at which the crystal is decomposed, and is preferably less than 1200 ° C. If the temperature of the substrate 101 when forming the base layer 103 is within the above temperature range, the base layer 103 with good crystallinity can be obtained.
  • the n-type semiconductor layer 104 is formed by stacking the n-contact layer 104a and the n-cladding layer 104b.
  • the n contact layer 104a and the n clad layer 104b may be formed by sputtering or MOCVD.
  • the light emitting layer 105 can be formed by either sputtering or MOCVD, but MOCVD is particularly preferable.
  • the barrier layers 105a and the well layers 105b are alternately and repeatedly stacked, and the barrier layers 105a may be stacked in the order in which the barrier layers 105a are disposed on the n-type semiconductor layer 104 side and the p-type semiconductor layer 106 side. .
  • the p-type semiconductor layer 106 may be formed by either sputtering or MOCVD.
  • the p-cladding layer 106a and the p-contact layer 106b may be sequentially stacked.
  • Patterning is performed by a known photolithography technique, and a part of the laminated semiconductor layer 20 in a predetermined region is etched to expose a part of the n contact layer 104a.
  • the n-type electrode 108 is formed on the exposed surface 104c of the n-contact layer 104a by sputtering or the like.
  • the p-type electrode forming step includes a translucent electrode forming step and an electrode forming step.
  • ⁇ Translucent electrode forming step> The n-type electrode is covered with a mask, and the light-transmitting electrode 109 is formed on the p-type semiconductor layer 106 left without being removed by etching using a known method such as sputtering.
  • a part of the laminated semiconductor layer 20 in a predetermined region is etched to form the n contact layer 104a.
  • the n-type electrode 108 may be formed.
  • FIG. 5 is a process cross-sectional view illustrating an electrode forming process.
  • the metal reflection layer is formed so as to cover the bonding layer, and further the bonding layer is formed so as to cover the metal reflection layer, and the bonding layer, the metal reflection layer, and the bonding layer
  • the side surface is inclined so that the outer peripheral side is thinner than the center side.
  • FIG. 5B the portion of the resist 21 corresponding to the portion where the bonding pad electrode is to be formed is removed, thereby forming a cured portion (reverse taper type mask) made of a reverse taper type crosslinked polymer. 23 is formed.
  • a method of forming the inverse tapered mask 23 there are known methods such as a method using an n-type photoresist or a method using an image inversion type photoresist. In the first embodiment, an image inversion type photoresist is used. A method will be described.
  • FIG. 6 is a cross-sectional process diagram for explaining the reverse taper mask forming process shown in FIG.
  • the mask formation step includes: a resist coating step of forming a resist portion by applying an insoluble resist on the translucent electrode; and a soluble portion formed by exposure by masking and exposing a part of the resist portion.
  • a partial exposure step for forming an insoluble portion left unexposed a curing step in which the soluble portion becomes a cured portion by heating, and a resist portion is fully exposed to form the insoluble portion as a soluble portion.
  • ⁇ Resist application process> First, an insoluble resist is applied on the protective film 10 on the translucent electrode 109 and dried to form a resist portion 21.
  • the image reversal type photoresist for example, AZ5200NJ (product name: manufactured by AZ Electronic Materials Co., Ltd.) is used.
  • ⁇ Partial exposure process> Next, when viewed in cross section, as shown in FIG. 6A, a mask 25 is disposed on the upper surface of the resist portion 21 so as to cover the position where the electrode is formed, and from the mask 25 side to the substrate 1 side.
  • the resist portion 21 in the portion irradiated with light is photoreacted to form a soluble resist portion (soluble portion) 22. Since this photoreaction proceeds according to the intensity of light, the photoreaction progresses quickly on the light irradiation surface side, and the photoreaction progresses slowly on the translucent electrode 109 side. Therefore, the side surface of the soluble resist portion (soluble portion) 22 is directed toward the portion (position where the electrode is formed) covered with the mask 25 as shown in FIG. It forms so that it may become reverse taper shape (reverse inclination shape) which retreated inside, so that it goes below.
  • the masked portion of the resist portion 21 remains as an insoluble resist portion (insoluble portion) 21 and has a tapered shape (inclined shape) that recedes inward as the side faces upward when viewed in cross section. It is formed.
  • the soluble resist portion 22 is cross-linked by a thermal reaction as shown in FIG. It is set as the hardening part 23 which consists of.
  • the hardening part 23 which consists of.
  • FIG. 6C without using a mask, light is irradiated to the surface side of the insoluble resist portion (insoluble portion) 21 and the hardened portion 23 made of a crosslinked polymer, so that FIG.
  • the insoluble resist part (insoluble part) 21 that has not been converted into the soluble resist 22 in a) is photoreacted to form a soluble resist part (soluble part) 22.
  • RIE reactive ion etching
  • RIE reactive ion etching
  • the exposed upper surface 109c of the translucent electrode 109 is preferably wet etched. Accordingly, the upper surface 109c can be a fresh surface from which impurities and defects are removed, and adhesion with the bonding layer 110 bonded to the upper surface 109c can be improved.
  • the bonding layer 110 is formed on the upper surface 109c of the translucent electrode 109 and the cured portion (reverse taper type mask) 23 made of a crosslinked polymer by sputtering.
  • the bonding layer 110 can be formed with high coverage regardless of the sputtering material.
  • the bonding layer 110 is formed substantially uniformly over the entire upper surface 109 c of the translucent electrode 109 and is formed so as to partially cover the end portion 10 c of the protective film 10.
  • a metal reflection layer 117 is formed.
  • the metal reflective layer 117 can be formed with high coverage regardless of the sputtering material.
  • the metal reflective layer 117 is formed so as to completely cover the bonding layer 110 by forming the metal reflective layer 117 so as to be thicker than the bonding layer 110.
  • a bonding layer 119 is formed.
  • the bonding layer 119 can be formed with high coverage regardless of the sputtering material.
  • the bonding layer 119 is formed so as to be much thicker than the bonding layer 110 and the metal reflective layer 117, so that the metal reflective layer 117 is completely covered as shown in FIG. Is done.
  • the cured portion (reverse taper type mask) 23 made of a crosslinked polymer is peeled off by immersing in a resist stripping solution. Thereby, as shown in FIG. 5E, the p-type electrode 111 having the bonding pad electrode 120 composed of the metal reflection layer 117 and the bonding layer 119 is formed.
  • the film thickness is reduced in the portion that is shaded from the sputtering direction of the reverse tapered mask 23. Accordingly, layers having different inclination angles can be formed. Thereby, the inclined surfaces 110c, 117c, and 119c can be formed on the outer peripheral portions of the bonding layer 110 and the bonding pad electrode 120 so that the film thickness gradually decreases toward the outer peripheral side.
  • pretreatment for cleaning the surface of the light-transmitting electrode 109 in a region where the bonding layer 110 is formed may be performed.
  • a cleaning method there are a dry process that is exposed to plasma or the like and a wet process that is brought into contact with a chemical solution. The dry process is desirable from the viewpoint of simplicity of the process. In this way, the semiconductor light emitting device 1 shown in FIGS. 1 to 3 is manufactured.
  • one electrode 111 includes a bonding layer 110 and a bonding pad electrode 120 formed so as to cover the bonding layer 110, and the maximum thickness of the bonding pad electrode 120 is It is formed thicker than the maximum thickness of the bonding layer 110, and is composed of one or more layers.
  • the outer layer 110d and 120d of the bonding layer 110 and the bonding pad electrode 120 are gradually increased in thickness toward the outer periphery. Since the thin inclined surfaces 110c, 117c, and 119c are formed, it is possible to prevent external air or moisture from entering the bonding layer 110, improve the corrosion resistance of the bonding layer 110, and emit semiconductor light. The device life can be extended.
  • the bonding layer 110 has Al, Ti, V, Cr, Mn, Co, Zn, Ge, Zr, Nb, Mo, Ru, Hf, Ta, W, Re, Since it is composed of at least one element selected from the group consisting of Rh, Ir and Ni and is a thin film having a maximum thickness in the range of 10 to 1000 mm, the translucent electrode 109 and the bonding pad electrode 120 Thus, an electrode that does not peel off due to tensile stress during bonding of the bonding wires can be obtained.
  • a semiconductor light-emitting device 1 is a thin film having a bonding layer made of Au, Al, or an alloy containing any of these metals, and a maximum thickness of the bonding layer in a range of 50 nm to 2000 nm. Since it is a structure, it can be set as the electrode which improves the bondability of the wire bonding to the bonding pad electrode 120, and does not peel even by the tensile stress at the time of bonding wire bonding.
  • the bonding pad electrode 120 includes a metal reflective layer 117 formed so as to cover the bonding layer 110, and a bonding layer 120 formed so as to cover the metal reflective layer 117.
  • the metal reflective layer 117 is made of Ag, Al, Ru, Rh, Pd, Os, Ir, Pt, Ti or an alloy containing any of these metals, and has a maximum thickness of 20 nm. Since the thin film has a thickness in the range of 3000 nm or less, the bonding property and corrosion resistance of the electrodes can be improved, and the light emission characteristics of the semiconductor light emitting element can be improved.
  • a translucent electrode 109 is formed between one conductive electrode 111 and the upper surface 106c of the laminated semiconductor layer 20, and the translucent electrode 109 is A conductive oxide containing any one of In, Zn, Al, Ga, Ti, Bi, Mg, W, Ce, Sn, and Ni, a transparent material selected from the group consisting of any one of zinc sulfide and chromium sulfide. Since the structure is made of a light conductive material, the bonding property and corrosion resistance of the electrodes can be improved, and the light emission characteristics of the semiconductor light emitting element can be improved.
  • the laminated semiconductor layer 20 is formed by laminating the n-type semiconductor layer 104, the light-emitting layer 105, and the p-type semiconductor layer 106 in this order from the substrate 101 side. Since the structure has a multi-quantum well structure, it is possible to improve the bondability and corrosion resistance of the electrodes and improve the light emission characteristics of the semiconductor light emitting device.
  • the laminated semiconductor layer 20 is mainly composed of a gallium nitride-based semiconductor, the bonding property and corrosion resistance of the electrodes are improved, and the light emitting characteristics of the semiconductor light emitting device are improved. Can be improved.
  • the electrode for the semiconductor light emitting device 1 includes a bonding pad electrode 120 formed so that at least one of the one electrode 111 and the other electrode 108 covers the bonding layer 110 and the bonding layer 110.
  • the bonding pad electrode 120 has a maximum thickness that is larger than the maximum thickness of the bonding layer 110, and is composed of one or more layers.
  • the outer peripheral portion 110d of the bonding layer 110 and the bonding pad electrode 120 Since the inclined surfaces 110c, 117c, and 119c are formed in 120d so that the film thickness gradually decreases toward the outer peripheral side, it is possible to obtain an electrode with improved bondability and corrosion resistance.
  • the bonding layer 110 has Al, Ti, V, Cr, Mn, Co, Zn, Ge, Zr, Nb, Mo, Ru, Hf, Ta, and W. , Re, Rh, Ir, Ni, and at least one element selected from the group consisting of a thin film having a maximum thickness in the range of 10 mm to 1000 mm, so that the electrode has improved bondability and corrosion resistance It can be.
  • the bonding pad electrode 120 is made of a bonding layer 119 made of Au, Al, or an alloy containing any of these metals, and the bonding layer 119 has a maximum thickness. Since it is a structure which is a thin film of the range of 50 nm or more and 2000 nm or less, it can be set as the electrode which improved the bondability and corrosion resistance with a gold wire.
  • the bonding pad electrode 120 is formed so as to cover the bonding layer 110, and the bonding is formed so as to cover the metal reflecting layer 117.
  • the metal reflective layer 117 is made of Ag, Al, Ru, Rh, Pd, Os, Ir, Pt, Ti or an alloy containing any of these metals, and the maximum Since the thin film has a thickness in the range of 20 nm to 3000 nm, an electrode with improved light extraction efficiency can be obtained.
  • the electrode for the semiconductor light emitting device 1 is a translucent electrode between one electrode 111 and the upper surface 106c of the laminated semiconductor layer 20 or between the other electrode 108 and the semiconductor layer exposed surface 104c.
  • 109 is a conductive oxide containing any one of In, Zn, Al, Ga, Ti, Bi, Mg, W, Ce, Sn, Ni, zinc sulfide, Since it is the structure comprised from the translucent electroconductive material chosen from the group which consists of either 1 type among chromium sulfide, it can be set as the electrode which improved bondability and corrosion resistance.
  • the electrode forming step forms the inverse tapered mask 23 on the upper surface 106 c of the stacked semiconductor layer 20, and then the bonding layer 110 on the upper surface 106 c of the stacked semiconductor layer 20.
  • the bonding pad electrode 120 having a maximum thickness compared to the maximum thickness of the bonding layer 110 is formed so as to cover the bonding layer 110, and the one electrode 111 is formed.
  • Inclined surfaces 110c, 117c, and 119c can be formed on the outer peripheral portions 110d and 120d of the 110 and the bonding pad electrode 120 so that the outer peripheral side gradually becomes thinner, thereby preventing external air or moisture from entering the bonding layer 110. Therefore, the corrosion resistance of the bonding layer 110 can be improved, and the lifetime of the semiconductor light emitting device can be extended.
  • the method for manufacturing a semiconductor light emitting device includes a step of forming the translucent electrode 109 on the upper surface 106c of the stacked semiconductor layer 20 or the exposed surface 104c of the semiconductor layer before the electrode forming step, Electrode bondability and corrosion resistance can be improved, and the light emission characteristics of the semiconductor light emitting device can be improved.
  • the electrode forming step forms the inverse tapered mask 23 and the bonding layer 110 and then covers the bonding layer 110 so as to cover the bonding layer 110.
  • a metal reflective layer 117 having a maximum thickness is formed, and then a bonding layer 120 having a maximum thickness compared to the maximum thickness of the metal reflective layer 117 is formed so as to cover the metal reflective layer 117, and one electrode 111 is formed. Therefore, the inclined surfaces 110c, 117c, and 119c can be formed on the outer peripheral portions 110d and 120d of the bonding layer 110 and the bonding pad electrode 120 so that the outer peripheral sides become gradually thinner. Intrusion into the bonding layer 110 can be prevented, the corrosion resistance of the bonding layer 110 is improved, and the lifetime of the semiconductor light emitting device is extended. It is possible.
  • the formation of the bonding layer 110, the metal reflection layer 117, and the bonding layer 119 in the bonding electrode forming step is performed by the sputtering method, In a portion shaded from the sputtering direction, layers having different inclination angles can be formed according to the film thickness. Thereby, the inclined surfaces 110c, 117c, and 119c can be formed on the outer peripheral portions 110d and 120d of the bonding layer 110 and the bonding pad electrode 120 so that the outer peripheral sides become gradually thinner. Can be prevented, the corrosion resistance of the bonding layer 110 can be improved, and the lifetime of the semiconductor light emitting device can be extended.
  • the method of manufacturing a semiconductor light emitting device includes a step of forming the protective film 10 on the upper surface 109c of the translucent electrode 109 before the mask forming step, The top surface can be protected.
  • FIG. 7 is a schematic cross-sectional view showing another example of the semiconductor light emitting device according to the embodiment of the present invention.
  • another bonding layer 130 is formed on the exposed surface 104 c opened in the protective film 10 formed on the n-type semiconductor layer 104.
  • the configuration is the same as that of the first embodiment except that the n-type electrode 108 is formed so as to cover another bonding layer 130.
  • the same members as those in the first embodiment are denoted by the same reference numerals.
  • An inclined surface 130c is formed on the outer peripheral portion 130d of the bonding layer 130 so that the film thickness gradually decreases toward the outer peripheral side.
  • the maximum thickness of the n-type electrode 108 that also serves as a bonding pad electrode is formed to be thicker than the maximum thickness of the bonding layer 130 and is formed of one layer.
  • An inclined surface 108c is formed on the outer peripheral portion 108d of the n-type electrode 108 serving also as a bonding pad electrode so that the film thickness gradually decreases toward the outer peripheral side.
  • the n-type electrode bonding layer 130 may be formed between the n-type electrode 108 and the n-type semiconductor layer 104.
  • the bonding layer 130 is preferably made of the same material as that of the bonding layer 110 of the p-type electrode 111, and the maximum thickness is preferably in the same range and in the range of 10 to 1000 mm. Thereby, the bonding strength of the n-type electrode 108 to the n-type semiconductor layer 104 can be significantly increased.
  • a layer made of the above-described translucent conductive material Al, Ti, V, Cr, Mn, Co, Zn, Ge, Zr, Nb, Mo, Ru, Hf, Ta, W
  • a laminated structure with a metal film made of at least one element selected from the group consisting of Re, Rh, Ir, and Ni may be adopted.
  • a layer made of a light-transmitting conductive material and a metal film such as Cr may be sequentially stacked on the n-type semiconductor layer 104.
  • the bonding layer 130 it is more preferable to use an electrode having the same configuration as the bonding pad electrode 120 as the n-type electrode 108. That is, when the bonding pad electrode 120 has a two-layer structure of the metal reflection layer 117 and the bonding layer 119, the n-type electrode 108 is any one of Ag, Al, Pt group elements or any of these metals.
  • a laminated structure including at least a metal reflective layer made of an alloy containing and a bonding layer is preferable.
  • the bonding layer 130 is formed between the n-type electrode 108 and the n-type semiconductor layer 104, the light-transmitting electrode 109 of the p-type electrode 111 is formed, and then the bonding layer 110 of the p-type electrode 111 is formed.
  • the bonding layer 130 for the n-type electrode 108 is formed simultaneously with the formation, and then the n-type electrode 108 may be formed simultaneously with the formation of the bonding pad electrode 120 of the p-type electrode 111.
  • the n-type electrode 108 may have a three-layer structure including a stacked body in which a metal reflective layer, a barrier layer, and a bonding layer are sequentially stacked from the n-type semiconductor layer 104 side.
  • the n-type electrode 108 may have a single-layer structure including only a bonding layer that also serves as a metal reflection layer.
  • the other electrode 108 includes a bonding layer 130 and a bonding pad electrode 108 that also serves as the other electrode formed so as to cover the bonding layer 130.
  • the maximum thickness is formed thicker than the maximum thickness of the bonding layer 110, and is formed of one layer.
  • the film thickness gradually increases toward the outer peripheral side of the bonding layer 130 and the outer peripheral portions 130d and 108d of the bonding pad electrode 108, respectively. Since the thin inclined surfaces 130c and 108c are formed, it is possible to prevent external air or moisture from entering the bonding layer 130, improve the corrosion resistance of the bonding layer 130, and improve the lifetime of the semiconductor light emitting device. Can be lengthened.
  • FIG. 8 is a schematic cross-sectional view showing still another example of the semiconductor light emitting device according to the embodiment of the present invention, and is an enlarged cross-sectional view of a p-type electrode.
  • the semiconductor light emitting device according to the embodiment of the present invention is omitted in the drawing, but the protective film is not formed on the translucent electrode 109 of the p-type electrode 112. It is set as the same structure.
  • the same members as those in the first embodiment are denoted by the same reference numerals.
  • the metal reflective layer 117 is formed so as to cover the bonding layer 110
  • the bonding layer 119 is formed so as to cover the metal reflective layer 117.
  • the outer peripheral portions 110d and 120d of the bonding layer 110, the metal reflection layer 117, and the bonding layer 119 are inclined surfaces 110c, 117c, and 119c formed so that the film thickness gradually decreases toward the outer peripheral side.
  • External air or moisture can enter the bonding layer 110 unless it passes through the bonding surface between the translucent electrode 109 and the bonding layer 119 and the bonding surface between the translucent electrode 109 and the metal reflective layer 117. Therefore, it is difficult for external air or moisture to enter the bonding layer 110. Thereby, the bonding layer 110 is not easily decomposed, and the element lifetime of the semiconductor light emitting element can be extended.
  • the semiconductor light emitting device 1 includes a metal reflection layer 117 formed so that the bonding pad electrode 120 covers the bonding layer 110, and a bonding layer 119 formed so as to cover the metal reflection layer 117.
  • the outer peripheral portions 110d and 120d of the bonding layer 110, the metal reflective layer 117, and the bonding layer 119 are inclined surfaces 110c, 117c, and 119c formed so that the film thickness gradually decreases toward the outer peripheral side, respectively.
  • FIG. 9 is a schematic cross-sectional view showing an example of a lamp according to an embodiment of the present invention.
  • the lamp 3 according to the embodiment of the present invention is a shell type, and the semiconductor light emitting element 1 according to the embodiment of the present invention is used.
  • the lamp 3 according to the embodiment of the present invention is, for example, a combination of the semiconductor light emitting element 1 and a phosphor, and can have a configuration well known to those skilled in the art by means known to those skilled in the art. Further, it is known that the emission color can be changed by combining the semiconductor light emitting element 1 and the phosphor, but such a technique is adopted without any limitation in the lamp which is an embodiment of the present invention. It is possible.
  • the bonding pad electrode 120 of the p-type electrode 111 of the semiconductor light emitting device 1 is bonded to the frame 31 by the wire 33, and the n-type electrode 108 (bonding pad) of the semiconductor light emitting device 1 is connected by the wire 34 to the other side.
  • the frame 32 is joined and mounted. Further, the periphery of the semiconductor light emitting element 1 is sealed with a mold 35 made of a transparent resin.
  • a lamp 3 according to an embodiment of the present invention includes a semiconductor light-emitting element 1 described above, and a bonding pad on which the semiconductor light-emitting element 1 is disposed and one conductive type electrode (p-type electrode) 111 is disposed.
  • the first frame 31 is wire-bonded to the electrode 120
  • the second frame 32 is wire-bonded to another conductive electrode (n-type electrode) 108 of the semiconductor light emitting device 1, and the semiconductor light emitting device 1 is formed.
  • the mold 35 is provided with an excellent light emitting characteristic, can prevent external air or moisture from entering the bonding layer 110, improves the corrosion resistance of the bonding layer 110, and emits semiconductor light. It is possible to obtain a lamp having a long element life.
  • the lamp 3 according to the embodiment of the present invention can be used for any purposes such as a general-purpose shell type, a side view type for portable backlight use, and a top view type used for a display.
  • FIG. 10 is a schematic cross-sectional view showing still another example of the semiconductor light emitting device according to the embodiment of the present invention, and is an enlarged cross-sectional view of a p-type electrode.
  • the semiconductor light emitting device according to the embodiment of the present invention completely covers the outer periphery of the p-type electrode 111, that is, the boundary that forms the contour line when the p-type electrode 111 is viewed in plan.
  • the structure is the same as that of the first embodiment except that another protective film 11 is formed so as to cover it.
  • the same members as those in the first embodiment are denoted by the same reference numerals.
  • the p-type electrode 111 includes a translucent electrode 109, a bonding layer 110, and a bonding pad electrode 120, and is schematically formed by being formed on the p-type semiconductor layer 106.
  • Upper surface 109c of the transparent electrode 109 is covered by a protective film 10 made of SiO 2, a portion of the protective film 10 is being opened openings 10d formed, the upper surface of the transparent electrode 109 through the opening 10d Part of 109c is exposed.
  • the bonding layer 110 covers the upper surface 109c of the translucent electrode 109 exposed from the opening 10d with a substantially uniform film thickness, and the film thickness is increased on the outer peripheral side of the opening 10d. It is formed so as to cover the end portion 10c.
  • an inclined surface 110c is formed on the outer peripheral portion 110d of the bonding layer 110 that covers the end portion 10c of the protective film 10 so that the film thickness gradually decreases toward the outer peripheral side.
  • the bonding pad electrode 120 includes a metal reflection layer 117 and a bonding layer 119 that are formed to be thicker than the maximum thickness of the bonding layer 110.
  • an inclined surface 119c is formed on the outer peripheral portion 120d of the bonding pad electrode 120 so that the film thickness gradually decreases toward the outer peripheral side.
  • An inclined surface 117c is formed on the outer peripheral portion of the metal reflective layer 117 so that the film thickness gradually decreases toward the outer peripheral side.
  • the metal reflective layer 117 is formed so as to cover the bonding layer 110.
  • the metal reflection layer 117 is formed so as to completely cover the leading edge of the inclined surface 110c of the bonding layer 110, that is, the boundary that forms the contour line when the bonding layer 110 is viewed in plan. . That is, when viewed in plan, the metal reflective layer 117 is formed so as to cover the bonding layer 110 and further extend to the outer peripheral side of the bonding layer 110, so any portion of the bonding layer 110 can be any metal reflective layer 117. It is possible to prevent exposure from below.
  • an inclined surface 119c is formed on the outer peripheral portion of the bonding layer 119 so that the film thickness gradually decreases toward the outer peripheral side.
  • the bonding layer 119 is formed so as to cover the metal reflective layer 117.
  • the bonding layer 119 is formed so as to completely cover the tip of the tip of the inclined surface 117c of the metal reflection layer 117, that is, the boundary that forms the contour line when the metal reflection layer 117 is viewed in plan. Yes. That is, since the bonding layer 119 is formed so as to cover the metal reflection layer 117 and project to the outer peripheral side of the metal reflection layer 117 when seen in a plan view, any portion of the metal reflection layer 117 can be bonded to the bonding layer. It is possible to prevent exposure from below 119.
  • Another protective film 11 is formed so as to cover a boundary portion that forms a contour line when the bonding pad electrode 120 p-type electrode 111 is viewed in plan. That is, another protective film 11 is laminated on the protective film 10, and the end portion 11c rides on the inclined surface 119c so as to completely cover the inclined surface (tapered surface) 119c of the bonding layer 119.
  • the layer 119 is formed so as to partially cover the upper surface 119d. Since the boundary between the bonding layer 119 and the protective film 10 is covered with another protective film 11, moisture can be prevented from entering from the boundary between the bonding layer 119 and the protective film 10. It is not easy to get into. Therefore, the bonding layer 110 is not easily decomposed, and the element lifetime of the semiconductor light emitting element can be extended.
  • the other protective film 11 only needs to be formed so as to completely cover the boundary that forms the contour line when the bonding pad electrode 120 is viewed in plan, and almost covers the p-type electrode 111 and contacts. You may form so that the exposure area
  • the material of the other protective film 11 may be any material that can protect the bonding layer 110 from external air or moisture.
  • another protective film 11 can be formed with high adhesion, and the other protective film 11 can be prevented from being easily peeled off.
  • the p-type electrode 111 can be firmly fixed.
  • the material of the protective film 11 it is preferable to use the same material as that of the protective film 10.
  • the material of the protective film 10 it is preferable to use SiO 2 as the material of the protective film 11.
  • FIG. 11 is a schematic cross-sectional view showing still another example of the semiconductor light emitting device according to the embodiment of the present invention, and is an enlarged cross-sectional view of a p-type electrode.
  • another protective film 11 is formed so as to completely cover the boundary that forms the outline when the bonding pad electrode 120 is viewed in plan.
  • the configuration is the same as that of the third embodiment.
  • the same members as those in the third embodiment are denoted by the same reference numerals.
  • the p-type electrode 112 includes a translucent electrode 109, a bonding layer 110, and a bonding pad electrode 120, and is formed on the p-type semiconductor layer 106 and schematically configured.
  • the bonding layer 110 formed at a position and size corresponding to the p-type electrode 112 covers the upper surface 109c of the translucent electrode 109 with a substantially uniform film thickness, and the outer peripheral portion 110d of the bonding layer 110 has an outer peripheral side.
  • An inclined surface 110c is formed so that the film thickness gradually decreases toward the surface.
  • the bonding pad electrode 120 includes a metal reflection layer 117 and a bonding layer 119 that are formed to be thicker than the maximum thickness of the bonding layer 110.
  • an inclined surface 119c is formed on the outer peripheral portion 120d of the bonding pad electrode 120 so that the film thickness gradually decreases toward the outer peripheral side.
  • An inclined surface 117c is formed on the outer peripheral portion of the metal reflective layer 117 so that the film thickness gradually decreases toward the outer peripheral side.
  • the metal reflective layer 117 is formed so as to cover the bonding layer 110. In other words, the metal reflection layer 117 is formed so as to completely cover the leading edge of the inclined surface 110c of the bonding layer 110, that is, the boundary that forms the contour line when the bonding layer 110 is viewed in plan. .
  • the metal reflective layer 117 is formed so as to cover the bonding layer 110 and further extend to the outer peripheral side of the bonding layer 110, so any portion of the bonding layer 110 can be any metal reflective layer 117. It is possible to prevent exposure from below.
  • an inclined surface 119c is formed on the outer peripheral portion of the bonding layer 119 so that the film thickness gradually decreases toward the outer peripheral side.
  • the bonding layer 119 is formed so as to cover the metal reflective layer 117.
  • the bonding layer 119 is formed so as to completely cover the tip of the tip of the inclined surface 117c of the metal reflection layer 117, that is, the boundary that forms the contour line when the metal reflection layer 117 is viewed in plan. Yes. That is, since the bonding layer 119 is formed so as to cover the metal reflection layer 117 and project to the outer peripheral side of the metal reflection layer 117 when seen in a plan view, any portion of the metal reflection layer 117 can be bonded to the bonding layer. It is possible to prevent exposure from below 119.
  • the boundary part that forms the contour line when the bonding layer 119 is viewed in plan is the boundary part that forms the contour line when the p-type electrode 111 is viewed in plan.
  • Another protective film 11 is formed so as to cover a boundary portion that forms a contour line when the bonding pad electrode 120 is viewed in plan. That is, another protective film 11 is laminated on the translucent electrode 109, and the end portion 11c rides on the inclined surface 119c so as to completely cover the inclined surface (tapered surface) 119c of the bonding layer 119, Further, it is formed so as to cover a part of the upper surface 119d of the bonding layer 119. Since the boundary between the bonding layer 119 and the translucent electrode 109 is covered with another protective film 11, moisture can be prevented from entering from the boundary between the bonding layer 119 and the translucent electrode 109. It is not easy to penetrate into the bonding layer 110.
  • the other protective film 11 only needs to be formed so as to completely cover the boundary that forms the contour line when the bonding pad electrode 120 is viewed in plan, and almost covers the p-type electrode 112 and contacts. You may form so that the exposure area
  • the material of the other protective film 11 may be any material that can protect the bonding layer 110 from external air or moisture.
  • another protective film 11 can be formed with high adhesion, and the other protective film 11 can be prevented from being easily peeled off.
  • the p-type electrode 112 can be firmly fixed.
  • the manufacturing method of the semiconductor light emitting device of Embodiment 7 is the manufacturing method of the semiconductor light emitting device 1 shown in FIG.
  • the laminated semiconductor layer 20 is formed on the substrate 101.
  • the stacked semiconductor layer 20 is formed by the MOCVD method, a layer having good crystallinity can be obtained.
  • the sputtering method a layer having crystallinity superior to the MOCVD method can be obtained.
  • the “layered semiconductor layer formation” including the buffer layer forming step, the base layer forming step, the n-type semiconductor layer forming step, the light-emitting layer forming step, and the p-type semiconductor layer forming step is referred to as the semiconductor light-emitting device of the first embodiment. It is performed according to the manufacturing method. Then, after forming the stacked semiconductor layer 20 in this manner, the n-type electrode 108 and the p-type electrode 111 are formed.
  • ⁇ N-type electrode formation process First, patterning is performed by a known photolithography technique, and a part of the laminated semiconductor layer 20 in a predetermined region is etched to expose a part of the n contact layer 104a. Next, the n-type electrode 108 is formed on the exposed surface 104c of the n contact layer 104a by sputtering or the like.
  • FIG. 18 is a process diagram for explaining a process of manufacturing the p-type electrode, and is an enlarged cross-sectional view showing only a part of a region where the p-type electrode 111 is manufactured.
  • the translucent electrode 109 is formed on the p-type semiconductor layer 106.
  • the translucent electrode 109 is formed by forming a mask that covers a region other than the region where the translucent electrode 109 is formed, such as the exposed surface 104c of the n contact layer 104a where the n-type electrode 108 is formed, and then forming a p-type semiconductor layer. It is formed on the film 106 using a known method such as a sputtering method, and then formed by a method of removing the mask. Note that the translucent electrode 109 may be formed after the n-type electrode 108 is formed, but may be formed before the etching of the stacked semiconductor layer 20 for forming the n-type electrode 108.
  • a transparent protective film 10a is formed on the upper surface 109c of the translucent electrode 109, and a resist 21 is applied on the transparent protective film 10a and dried.
  • the cross-sectional area of the upper surface 109c of the transparent electrode 109 on which the transparent protective film 10a is formed gradually increases toward the bottom surface.
  • a reverse-tapered mask 23 shown in FIG. 18 (b) having an opening 23a having an inner wall shape that becomes wider is formed. Examples of the method for forming the inverse taper type mask 23 include a method using an n-type photoresist and a method using an image inversion type photoresist.
  • FIG. 19 is a process diagram for explaining the manufacturing process of the mask shown in FIG. 18B, and is an enlarged sectional view showing only a region where one p-type electrode 111 is formed.
  • an insoluble resist that is an image reversal type photoresist is used as the resist 21.
  • the image reversal type photoresist for example, AZ5200NJ (product name: manufactured by AZ Electronic Materials Co., Ltd.) is used.
  • a mask 25 is disposed so as to cover a predetermined position above the resist 21, and from the mask 25 side to the resist 21 side as shown by an arrow in FIG. Is irradiated with light of a predetermined intensity and wavelength. As a result, the portion of the resist 21 irradiated with light is photoreacted to form a soluble portion 22.
  • the fusible portion 22 is formed to have a reverse taper shape (reverse inclination shape) that recedes inward as the side faces downward when viewed in cross section.
  • the resist 21 in the portion covered with the mask 25 is left as an insoluble resist (insoluble portion) 21 so as to have a tapered shape (inclined shape) that recedes inward as the side faces upward when viewed in cross section. Formed.
  • the fusible part 22 is thermally reacted to form a cured part (mask) made of a crosslinked polymer. 23.
  • the surface side of the insoluble resist 21 and the cured portion (mask) 23 made of the crosslinked polymer is irradiated with light of a predetermined intensity and wavelength without using a mask.
  • the insoluble resist 21 that has not been converted into the soluble portion 22 by the photoreaction described with reference to FIG.
  • a mask 23 made of a cross-linked polymer having an inversely tapered shape (inversely inclined shape) having a portion 23a is obtained.
  • the transparent protective film 10a exposed from the opening 23a of the mask 23 shown in FIG. 18B is removed by RIE (reactive ion etching) from a direction perpendicular to the upper surface 109c of the translucent electrode 109.
  • RIE reactive ion etching
  • FIG. 18C an opening 10d is formed, and the upper surface 109c of the translucent electrode 109 is exposed from the opening 10d. Since RIE (Reactive Ion Etching) is an etching method with high straightness and less wraparound, the transparent protective film 10a in the region that is a shadow of the mask 23 when viewed from the etching direction (upward in FIG. 18)
  • the end portion 10c of the transparent protective film 10a remains as shown in FIG. 18C without being removed by etching.
  • the translucent electrode 109 exposed from the opening 23a of the mask 23 is etched to form a bonding recess 109a in the upper surface 109c of the translucent electrode 109.
  • the bonding recess 109 a By forming the bonding recess 109 a, the inner surface of the bonding recess 109 a that appears from the translucent electrode 109 has better adhesion to the bonding layer 110 than the upper surface 109 c of the translucent electrode 109.
  • the translucent electrode 109 to be etched here is, for example, an amorphous IZO film, the bonding recess 109a having a specific shape can be easily formed with excellent etching properties.
  • the amorphous IZO film can be easily and accurately etched using a known etching solution (for example, ITO-07N etching solution (manufactured by Kanto Chemical Co., Inc.)).
  • a known etching solution for example, ITO-07N etching solution (manufactured by Kanto Chemical Co., Inc.)
  • the amorphous IZO film may be etched using a dry etching apparatus.
  • Cl 2 , SiCl 4 , BCl 3, or the like can be used as an etching gas at this time.
  • the IZO film in an amorphous state by performing the heat treatment, the IZO film and containing an In 2 O 3 crystal having a hexagonal structure, it is preferable that the IZO film containing an In 2 O 3 crystal having a bixbyite structure.
  • the light-transmitting electrode 109 having better adhesion to the bonding layer 110 and light-transmitting property than the amorphous IZO film can be obtained.
  • an IZO film containing an In 2 O 3 crystal having a hexagonal crystal structure is difficult to etch, it is preferable to perform heat treatment after the above-described etching treatment.
  • the crystal structure in the IZO film differs depending on the film formation conditions, heat treatment conditions, and the like.
  • Heat treatment for crystallizing the IZO film is preferably performed in an atmosphere containing no O 2, as the atmosphere containing no O 2, or an inert gas atmosphere such as N 2 atmosphere, or an inert, such as N 2
  • N 2 atmosphere an inert gas atmosphere of gas and H 2
  • N 2 atmosphere or a mixed gas atmosphere of N 2 and H 2 is desirable.
  • the IZO film is crystallized into a film containing In 2 O 3 crystals having a hexagonal structure, and IZO It is possible to effectively reduce the sheet resistance of the membrane.
  • the heat treatment temperature for crystallizing the IZO film is preferably 500 ° C. to 1000 ° C.
  • the IZO film may not be sufficiently crystallized, and the light transmittance of the IZO film may not be sufficiently high.
  • the IZO film is crystallized, but the light transmittance of the IZO film may not be sufficiently high.
  • the semiconductor layer under the IZO film may be deteriorated.
  • the bonding layer 110 is formed by sputtering to cover the bonding recess 109a of the translucent electrode 109.
  • the coverage of the bonding layer 110 can be increased by using a sputtering method in which the sputtering conditions are controlled.
  • the bonding layer 110 includes the entire surface of the bonding recess 109a of the translucent electrode 109, the entire surface of the inner wall surface of the opening 10d of the transparent protective film 10a, and a part of the end 10c of the transparent protective film 10a.
  • An inclined surface 110c is formed on the outer peripheral portion 110d of the bonding layer 110 so as to cover and gradually decrease in thickness toward the outside.
  • a pretreatment may be performed to clean the surface of the bonding recess 109a of the translucent electrode 109 on which the bonding layer 110 is formed.
  • the cleaning method include a dry process method exposed to plasma and the like, and a wet process method in contact with a chemical solution, but it is desirable to use a dry process method from the viewpoint of simplicity of the process.
  • a metal reflection layer 117 is formed by sputtering.
  • the coverage of the metal reflective layer 117 can be increased, and the bonding layer 110 is covered and directed outward.
  • a metal reflection layer 117 having an inclined surface 117c whose thickness is gradually reduced at the outer peripheral portion is formed.
  • a bonding layer 119 is formed by sputtering.
  • the coverage of the bonding layer 119 can be increased, and the shape of the outer peripheral portion is formed along the shape of the inner wall of the opening 23a of the mask 23.
  • a bonding layer 119 (bonding pad electrode 120) is formed that covers the layer 117 and has an inclined surface 119c that gradually decreases in thickness toward the outside at the outer peripheral portion 120d.
  • the mask 23 made of a crosslinked polymer is peeled off by being immersed in a resist stripping solution.
  • a bonding pad electrode 120 composed of the metal reflection layer 117 and the bonding layer 119 is formed.
  • a mask 23 having an opening 23a having an inner wall shape whose cross-sectional area gradually increases toward the bottom surface is formed, and the bonding layer 110, the metal reflective layer 117, and the bonding layer 119 have high coverage. Since it is formed by the sputtering method, a layer having a different inclination angle is formed in the shadowed area of the mask 23 when viewed from the sputtering direction according to the thickness of each layer constituting the bonding layer 110, the metal reflection layer 117, and the bonding layer 119. Is done. As a result, inclined surfaces 110c, 117c, and 119c are formed on the outer peripheral portions of the bonding layer 110, the metal reflective layer 117, and the bonding layer 119, respectively, with the thickness gradually decreasing toward the outside.
  • the bonding pad electrode 120 when viewed in plan, it has a substantially donut shape that exposes the central portion of the bonding pad electrode 120, and is transparent to the outer edge portion (contour line) of the bonding pad electrode 120.
  • An edge protective film 10b that covers the outer edge of the bonding pad electrode 120 is formed across a portion that becomes a joint with the protective film 10a.
  • the bonding pad electrode 120 since the bonding pad electrode 120 has an inclined surface 119c whose thickness is gradually decreased toward the outside, formed on the outer peripheral portion 120d, the edge protection film 10b is formed on the bonding pad electrode 120.
  • the inclined surface 119c is easily formed with a uniform thickness.
  • edge protection film 10b This prevents a portion where the edge protection film 10b is not formed on a portion that becomes a joint between the outer edge (contour line) of the bonding pad electrode 120 and the transparent protection film 10a, and the outer edge of the bonding pad electrode 120 is prevented.
  • the edge protective film 10b straddling the portion that becomes the joint between the portion (contour line) and the transparent protective film 10a can be formed by easily adhering to the uniform film thickness. In this way, the semiconductor light emitting element 1 including the p-type electrode 111 shown in FIGS. 14 to 16 is formed.
  • the p-type electrode 111 includes the translucent electrode 109 having the bonding recess 109a on the upper surface 109c, the bonding layer 110 formed so as to cover the bonding recess 109a, and the bonding layer 110.
  • the bonding pad electrode 120 is formed on the outer peripheral portion 120d and has an inclined surface 119c that gradually decreases in thickness toward the outer side. A sufficiently high bonding force with the bonding pad electrode 120 is obtained, and the bonding property of the p-type electrode 111 is excellent.
  • the bonding pad electrode 120 having the inclined surface 119c whose thickness is gradually decreased toward the outside on the outer peripheral portion 120d is formed so as to cover the bonding layer 110. Therefore, intrusion of air and moisture from the outside to the bonding layer 110 can be effectively prevented, and excellent corrosion resistance can be obtained.
  • the effect of the semiconductor light emitting device 1 of the present embodiment will be described by taking, for example, a semiconductor light emitting device including a p-type electrode shown in FIG.
  • a semiconductor light emitting device including a p-type electrode shown in FIG. 25 only the p-type electrode provided in the semiconductor light emitting element is shown, and the substrate and the laminated semiconductor layer are not shown.
  • the edge protection film 10b is not formed, and the bonding recess 109a is not formed on the upper surface 109c of the translucent electrode 109.
  • the side surfaces of the bonding layer 210, the metal reflective layer 217 constituting the bonding pad electrode 220, and the bonding layer 219 are formed substantially perpendicular to the upper surface 109c of the translucent electrode 109.
  • the bonding layer 210 In the p-type electrode 201 shown in FIG. 25, external air or moisture easily enters from between the transparent protective film 10a and the metal reflective layer 217 and reaches the bonding layer 210. When air or moisture reaches the bonding layer 210, the bonding layer 210 deteriorates, causing a problem that the element lifetime of the semiconductor light emitting element is shortened.
  • the bonding layer 210 is made of Cr, Cr is easily oxidized or hydroxylated by air or moisture that reaches the bonding layer 210, and the bonding layer 210 is decomposed and lost. Become prominent. Further, since the oxidation or hydroxylation reaction of Cr is accelerated by applying a bias to the semiconductor light emitting device including the p-type electrode 201 shown in FIG. 25, the bonding layer 210 may be easily decomposed and lost. was there.
  • the bonding pad electrode is formed so as to cover the bonding layer 110, and the inclined surface 119c is formed on the outer peripheral portion 120d so that the film thickness gradually decreases toward the outside. Since 120 is provided, no part of the bonding layer 110 is exposed from below the bonding pad electrode 120. Therefore, according to the semiconductor light emitting device 1 of the present embodiment, air or moisture outside the semiconductor light emitting device 1 can be effectively prevented from entering the bonding layer 110, and the bonding layer 110 is made of Cr. Even so, excellent corrosion resistance and excellent bondability between the translucent electrode 109 and the bonding pad electrode 120 by the bonding layer 110 can be obtained.
  • the bonding layer 110 is formed of Al, Ti, V, Cr, Mn, Co, Zn, Ge, Zr, Nb, Mo, Ru, Hf, Ta, W, Re, Rh.
  • the thin film is made of at least one element selected from the group consisting of Ir, Ni, and has a maximum thickness in the range of 10 to 400 mm, the bonding property between the translucent electrode 109 and the bonding pad electrode 120 Can be further improved.
  • the transparent protective film 10a is formed so as to cover the region where the bonding recess 109a is not formed on the upper surface 109c of the translucent electrode 109, and the outer edge of the bonding layer 110 is formed. And the outer edge of the bonding pad electrode 120 are disposed on the transparent protective film 10a, so that even better corrosion resistance and bondability can be obtained.
  • the bonding pad electrode 120 is composed of the metal reflective layer 117 and the bonding layer 119, and no part of the bonding layer 110 is exposed from under the metal reflective layer 117. In addition, any part of the metal reflection layer 117 is not exposed from below the bonding layer 119, and the bonding layer 110 is double covered with the metal reflection layer 117 and the bonding layer 119. Furthermore, in the semiconductor light emitting device 1 of the present embodiment, the outer edge portion of the bonding pad electrode 120 is disposed on the transparent protective film 10a.
  • the semiconductor light emitting device 1 of the present embodiment does not pass through the joint surface between the transparent protective film 10a and the bonding layer 119 and the joint surface between the transparent protective film 10a and the metal reflective layer 117. 1 outside air or moisture cannot enter the bonding layer 110. Therefore, it is possible to more effectively prevent air or moisture outside the semiconductor light emitting element 1 from entering the bonding layer 110.
  • the edge protection film 10b that covers the outer edge of the bonding pad electrode 120 and exposes a part on the bonding pad electrode 120 is formed, so that it is further excellent. Corrosion resistance and bondability are obtained.
  • the step of manufacturing the p-type electrode 111 includes the step of forming the translucent electrode 109 and the step of forming the translucent electrode 109 on which the transparent protective film 10a is formed.
  • the step of forming the bonding recess 109a by etching the upper surface 109c of the translucent electrode 109 exposed from the opening 23a and the bonding recess 109a are covered.
  • Forming the bonding layer 110 the bonding layer 110 is formed in contact with the inner surface of the bonding recess 109 a that emerges from the translucent electrode 109 by forming the bonding recess 109 a.
  • the p-type electrode 111 having excellent adhesion to the bonding layer 110 can be obtained as compared with the case where the bonding layer 110 is formed on the upper surface 109 c of the translucent electrode 109.
  • FIG. 20 is a view showing another example of the semiconductor light emitting device of the present invention, and is a schematic cross-sectional view of the semiconductor light emitting device.
  • the semiconductor light emitting device 2 of the present embodiment shown in FIG. 20 is different from the semiconductor light emitting device 1 shown in FIG. 14 only in the n-type electrode 108, and other than the n-type electrode 108, the semiconductor light emitting device 1 shown in FIG. The same is said. Therefore, the same members as those of the seventh embodiment are denoted by the same reference numerals, and description thereof is omitted.
  • the same electrode as the p-type electrode 111 is used as the n-type electrode 108 except that the bonding pad electrode 120 has a single-layer structure composed of only the bonding layer 119. Is formed. Therefore, the n-type electrode 108 constituting the semiconductor light emitting element 2 of the present embodiment can be formed in the same manner as the p-type electrode 111 except that the metal reflective layer 117 is not formed.
  • the bonding property of the p-type electrode 111 is excellent as in the semiconductor light emitting device 1 shown in FIG.
  • the n-type electrode 108 has a translucent electrode 109 having a bonding recess 109a on the upper surface 109c and a bonding layer formed so as to cover the bonding recess 109a.
  • 110 and the bonding pad electrode 120 formed so as to cover the bonding layer 110 and formed with an inclined surface 119c whose thickness gradually decreases toward the outside on the outer peripheral portion 120d. A sufficiently high bonding force between the translucent electrode 109 and the bonding pad electrode 120 is obtained, and the bonding property of the n-type electrode 108 is excellent.
  • the bonding pad electrode 120 constituting the p-type electrode 111 and the n-type electrode 108 has an inclined surface 119c whose thickness is gradually reduced toward the outer periphery. Since the portion 120d is formed so as to cover the bonding layer 110, air and moisture can be effectively prevented from entering the bonding layer 110 from the outside, and excellent corrosion resistance is obtained. It will be.
  • the process of manufacturing the p-type electrode 111 and the n-type electrode 108 includes the process of forming the translucent electrode 109 and the transparent film on which the transparent protective film 10a is formed.
  • the bonding pad electrode 120 is formed which covers the bonding layer 110 and has an inclined surface 119c whose thickness is gradually reduced toward the outside at the outer peripheral portion 120d.
  • FIG. 21 is a view showing another example of the semiconductor light emitting device of the present invention, and is an enlarged schematic cross-sectional view of a p-type electrode constituting the semiconductor light emitting device.
  • the semiconductor light emitting device of this embodiment shown in FIG. 21 is different from the semiconductor light emitting device 1 shown in FIG. 14 only in that the transparent protective film 10a and the edge protective film 10b are not formed.
  • 14 is the same as the semiconductor light emitting device 1 shown in FIG. Therefore, the same members as those of the seventh embodiment are denoted by the same reference numerals, and description thereof is omitted.
  • the p-type electrode 112 constituting the semiconductor light emitting device of this embodiment can be formed in the same manner as the p-type electrode 111 shown in FIG. 14 except that the transparent protective film 10a and the edge protective film 10b are not formed.
  • the p-type electrode 112 has the translucent electrode 109 having the bonding recess 109a on the upper surface 109c.
  • a bonding layer 110 formed so as to cover the bonding recess 109a, and an inclined surface 119c formed so as to cover the bonding layer 110 and gradually decreasing in thickness toward the outside on the outer peripheral portion 120d. Since the pad electrode 120 is provided, a sufficiently high bonding force between the translucent electrode 109 and the bonding pad electrode 120 is obtained by the bonding layer 110, and the bonding property of the p-type electrode 112 is excellent.
  • the bonding pad electrode 120 having the inclined surface 119c whose thickness gradually decreases toward the outer side at the outer peripheral portion 120d is formed so as to cover the bonding layer 110. Intrusion of air and moisture from the outside to the bonding layer 110 can be effectively prevented, and excellent corrosion resistance can be obtained.
  • FIG. 22 is a view showing another example of the semiconductor light emitting device of the present invention, and is a schematic sectional view of the semiconductor light emitting device.
  • the semiconductor light emitting device 1a of the present embodiment shown in FIG. 22 is different from the semiconductor light emitting device 1 shown in FIG. 14 in that the transparent protective film 10a is not formed and the center of the bonding pad electrode 120 is viewed in plan view.
  • the upper surface protective film 10 is provided on the entire upper surface 109c of the translucent electrode 109 excluding the region where the portion is exposed. The rest is the same as the semiconductor light emitting device 1 shown in FIG.
  • the upper surface protective film 10 can have the same thickness made of the same material as the transparent protective film 10a in the semiconductor light emitting device 1 shown in FIG.
  • FIG. 23 is a process diagram for explaining a process of manufacturing the p-type electrode, and is an enlarged cross-sectional view showing only a part of a region where the p-type electrode 111a is manufactured.
  • a light-transmitting electrode is formed on the p-type semiconductor layer 106 in the same manner as the semiconductor light emitting device 1 shown in FIG. 109 is formed.
  • a resist 21 is applied on the transparent protective film 10a and dried, and the upper surface 109c of the translucent electrode 109 is formed in the same manner as the semiconductor light emitting device 1 shown in FIG. Then, a reverse taper type mask 23 shown in FIG. 23 (b) having an opening 23a having an inner wall shape whose cross-sectional area gradually increases toward the bottom surface is formed.
  • the transparent electrode 109 exposed from the opening 23a of the mask 23 shown in FIG. 23B is etched in the same manner as the semiconductor light emitting device 1 shown in FIG. As described above, the bonding recess 109 a is formed on the upper surface 109 c of the translucent electrode 109.
  • the bonding layer 110, the metal reflection layer 117, and the bonding layer 119 are formed in the same manner as the semiconductor light emitting device 1 shown in FIG. Thereafter, the mask 23 is peeled in the same manner as the semiconductor light emitting device 1 shown in FIG. As a result, as shown in FIG. 23E, a bonding pad electrode 120 composed of the metal reflective layer 117 and the bonding layer 119 is formed. Also in the present embodiment, similar to the semiconductor light emitting device 1 shown in FIG. 14, the inclined surface 110 c whose film thickness gradually decreases toward the outside on the outer peripheral portions of the bonding layer 110, the metal reflection layer 117, and the bonding layer 119, respectively. 117c and 119c are formed.
  • the upper surface protective film 10 is formed on the entire upper surface 109c of the translucent electrode 109 excluding a region exposing the central portion of the bonding pad electrode 120 when viewed in plan using a conventionally known method. .
  • the semiconductor light emitting element 1a including the p-type electrode 111a shown in FIG. 22 is formed.
  • the bonding property and the corrosion resistance are obtained.
  • the upper surface protective film 10 is provided on the entire upper surface 109c of the translucent electrode 109 excluding the region where the central portion of the bonding pad electrode 120 is exposed in plan view. Therefore, further excellent corrosion resistance and bondability can be obtained.
  • FIG. 24 is a schematic sectional view showing an example of the lamp of the present invention.
  • the lamp 3 of the present embodiment is a shell type, and is mounted with the semiconductor light emitting device 1 of the present invention shown in FIG. 14 as a semiconductor light emitting device.
  • the lamp 3 is, for example, a combination of the semiconductor light emitting element 1 and a phosphor, and can be configured as known to those skilled in the art by means known to those skilled in the art.
  • the emission color can be changed by combining the semiconductor light emitting element 1 and the phosphor, but such a technique can be adopted without any limitation in the lamp of this embodiment. It is.
  • the lamp 3 includes a frame 31 bonded to the bonding pad electrode 120 of the p-type electrode 111 of the semiconductor light-emitting element 1 with a wire 33 and an n-type electrode 108 ( The other frame 32 joined to the bonding pad) by a wire 34 and a mold 35 made of a transparent resin formed so as to surround the periphery of the semiconductor light emitting element 1.
  • the lamp 3 of the present embodiment uses the semiconductor light-emitting element 1 of the present invention shown in FIG. 14 provided with the p-type electrode 111 having excellent bonding properties and corrosion resistance as the semiconductor light-emitting element, the p-type electrode is used. 112 is excellent in bondability, can be manufactured with high yield, and has excellent corrosion resistance.
  • the lamp 3 of the present embodiment can be used for any purposes such as a general-use bullet type, a side view type for a portable backlight, and a top view type used for a display.
  • the lamp 3 manufactured from the semiconductor light emitting device of the present invention has the excellent effects as described above, a backlight, a mobile phone, a display, various panels, a computer, a game incorporating the lamp manufactured by this technology.
  • Electronic devices such as machines and lighting, and mechanical devices such as automobiles incorporating the electronic devices can give high reliability in use as products.
  • a battery-driven device such as a backlight, a cellular phone, a display, a game machine, and lighting, a product including a light-emitting element with excellent corrosion resistance and high reliability can be provided, which is preferable.
  • the manufacturing method of the semiconductor light emitting device of the twelfth embodiment is a manufacturing method of the semiconductor light emitting device 1 shown in FIG.
  • the laminated semiconductor layer 20 is formed on the substrate 101.
  • the stacked semiconductor layer 20 is formed by the MOCVD method, a layer having good crystallinity can be obtained.
  • the sputtering method a layer having crystallinity superior to the MOCVD method can be obtained.
  • the “layered semiconductor layer formation” including the buffer layer forming step, the base layer forming step, the n-type semiconductor layer forming step, the light-emitting layer forming step, and the p-type semiconductor layer forming step is referred to as the semiconductor light-emitting device of the first embodiment. It is performed according to the manufacturing method. Then, after forming the stacked semiconductor layer 20 in this manner, the n-type electrode 108 and the p-type electrode 111 are formed.
  • the ohmic junction layer 9, the junction layer 110, and the bonding pad electrode 120 are formed in the steps of manufacturing the n-type electrode 108 and the p-type electrode 111.
  • a manufacturing method will be described in which heat treatment is performed at the same time and heat treatment for improving the adhesion between the ohmic bonding layer 9 and the bonding layer 110 is performed simultaneously.
  • FIG. 33 is a schematic diagram for explaining a process of manufacturing the n-type electrode 108 and the p-type electrode 111.
  • FIG. 30 is a process diagram for explaining a process of manufacturing the p-type electrode, and is an enlarged cross-sectional view showing only a part of a region where the p-type electrode 111 is manufactured.
  • FIG. 31 is a process diagram for explaining a manufacturing process of a mask formed when manufacturing the n-type electrode 108 and the p-type electrode 111, and shows only a region where one p-type electrode 111 is formed. It is the expanded sectional view shown.
  • FIG. 32 is a process diagram for explaining a process of manufacturing the n-type electrode, and is an enlarged cross-sectional view showing only a part of a region where the n-type electrode is manufactured.
  • the laminated semiconductor layer 20 shown in FIG. 33A is patterned by a known photolithography technique, and a part of the laminated semiconductor layer 20 in a predetermined region is etched to expose a part of the n contact layer 104a.
  • a translucent electrode 109 is formed on the p-type semiconductor layer 106 of the stacked semiconductor layer 20.
  • the translucent electrode 109 is formed by forming a mask that covers a region other than the region where the translucent electrode 109 is formed, such as the exposed surface 104c of the n contact layer 104a, which is a region where the n-type electrode 108 is formed, and then p-type.
  • the translucent electrode 109 may be formed after the etching of the laminated semiconductor layer 20 for forming the n-type electrode 108, but before the etching of the laminated semiconductor layer 20 for forming the n-type electrode 108. You may form in.
  • the protective film 10a is formed on the upper surface 109c of the translucent electrode 109 shown in FIG. 30A, and at the same time, the protective film 10a is formed on the exposed surface 104c of the n-type semiconductor layer 104 shown in FIG. To do.
  • the protective film 10a is removed by RIE (reactive ion etching) from a direction perpendicular to the upper surface 109c of the translucent electrode 109 and the exposed surface 104c of the n-type semiconductor layer 104, and FIG. And as shown to Fig.32 (a), the opening part 10d is formed and the upper surface 109c of the translucent electrode 109 and the exposed surface 104c of the n-type semiconductor layer 104 are exposed from the opening part 10d.
  • RIE Reactive Ion Etching
  • a hole 109a is formed in the translucent electrode 109 as shown in FIGS. 30 (a) and 33 (a). Form.
  • the inner wall 109d of the hole 109a that emerges from the translucent electrode 109 is superior in adhesion to the ohmic bonding layer 9 compared to the upper surface 109c of the translucent electrode 109.
  • the translucent electrode 109 etched here is, for example, an amorphous IZO film, the hole 109a having a specific shape can be easily formed with excellent etching properties.
  • the amorphous IZO film can be easily and accurately etched using a known etching solution (for example, ITO-07N etching solution (manufactured by Kanto Chemical Co., Inc.)).
  • a known etching solution for example, ITO-07N etching solution (manufactured by Kanto Chemical Co., Inc.)
  • the amorphous IZO film may be etched using a dry etching apparatus.
  • Cl 2 , SiCl 4 , BCl 3, or the like can be used as an etching gas at this time.
  • the translucent electrode 109 is, for example, an amorphous IZO film
  • the amorphous IZO film is converted into an IZO film containing a hexagonal In 2 O 3 crystal, a bixbyite, or the like. It is preferable to form an IZO film including an In 2 O 3 crystal having a structure.
  • a light-transmitting electrode 109 having better adhesion and light-transmitting properties to the ohmic bonding layer 9 and the bonding layer 110 than an amorphous IZO film is obtained.
  • the crystal structure in the IZO film differs depending on the film formation conditions, heat treatment conditions, and the like.
  • Heat treatment for crystallizing the IZO film is preferably performed in an atmosphere containing no O 2, as the atmosphere containing no O 2, or an inert gas atmosphere such as N 2 atmosphere, or an inert, such as N 2
  • N 2 atmosphere an inert gas atmosphere of gas and H 2
  • N 2 atmosphere or a mixed gas atmosphere of N 2 and H 2 is desirable.
  • the IZO film is crystallized into a film containing In 2 O 3 crystals having a hexagonal structure, and IZO It is possible to effectively reduce the sheet resistance of the membrane.
  • the heat treatment temperature for crystallizing the IZO film is preferably 250 ° C. to 1000 ° C., more preferably 500 ° C. to 700 ° C.
  • the IZO film may not be sufficiently crystallized, and the light transmittance of the IZO film may not be sufficiently high.
  • the IZO film is crystallized, but the light transmittance of the IZO film may not be sufficiently high.
  • the semiconductor layer under the IZO film may be deteriorated.
  • the heat treatment for crystallizing the IZO film constituting the translucent electrode 109 may be performed immediately after the hole 109a is formed in the translucent electrode 109, but the bonding layer is formed on the ohmic bonding layer 9. This may be done after forming 110.
  • the heat treatment for crystallizing the IZO film constituting the light-transmitting electrode 109 after the bonding layer 110 is formed the heat treatment for crystallizing the IZO film, the ohmic bonding layer 9, the bonding layer 110, Since the heat treatment for improving the adhesiveness can be performed at the same time, the number of heat treatments can be reduced, and the manufacturing process can be simplified, which is preferable.
  • a resist is applied onto the protective film 10a and dried, and the resist corresponding to the part where the bonding pad electrode 120 is formed is removed, thereby removing the transparent film on which the protective film 10a shown in FIG.
  • a reverse taper type mask 23 having a portion 23a is formed (see FIG. 33C). As shown in FIGS. 30B and 33C, the opening 23a of the mask 23 formed on the translucent electrode 109 is a position where the hole 109a of the translucent electrode 109 is exposed. To form.
  • an insoluble resist which is an image reversal type photoresist is used as the resist 21 shown in FIG. 31A.
  • the image reversal type photoresist for example, AZ5200NJ (product name: manufactured by AZ Electronic Materials Co., Ltd.) is used.
  • the mask 25 is disposed so as to cover a predetermined position above the resist 21, and from the mask 25 side to the resist 21 side as shown by an arrow in FIG. Is irradiated with light of a predetermined intensity and wavelength. As a result, the portion of the resist 21 irradiated with light is photoreacted to form a soluble portion 22.
  • the fusible portion 22 is formed to have a reverse taper shape (reverse inclination shape) that recedes inward as the side faces downward when viewed in cross section.
  • the resist 21 in the portion covered with the mask 25 is left as an insoluble resist (insoluble portion) 21 so as to have a tapered shape (inclined shape) that recedes inward as the side faces upward when viewed in cross section. Formed.
  • the soluble part 22 is thermally reacted to form a cured part (mask) made of a crosslinked polymer. 23.
  • a heating device such as a hot plate or an oven
  • the soluble part 22 is thermally reacted to form a cured part (mask) made of a crosslinked polymer. 23.
  • light of a predetermined intensity and wavelength is irradiated on the surface side of the hardened portion (mask) 23 made of the insoluble resist 21 and the crosslinked polymer without using a mask.
  • the insoluble resist 21 that has not been converted to the soluble portion 22 by the photoreaction described with reference to FIG.
  • a predetermined developer to dissolve and remove the soluble portion 22 shown in FIG. 31 (c)
  • the opening recedes inward as the side faces downward.
  • the bonding layer 110 is formed by sputtering to cover the ohmic bonding layer 9 and the end 10c of the opening 10d of the protective film 10a. To do. At this time, the coverage of the bonding layer 110 can be increased by using a sputtering method in which the sputtering conditions are controlled. Thus, the bonding layer 110 is formed so as to cover the entire surface of the ohmic bonding layer 9 and a part of the end portion 10c of the protective film 10a, and the film thickness is formed on the outer peripheral portion 110d of the bonding layer 110 toward the outside. As a result, an inclined surface 110c is formed which becomes gradually thinner.
  • a pretreatment may be performed to clean the surface of the ohmic bonding layer 9 where the bonding layer 110 is formed or the end 10c of the opening 10d of the protective film 10a.
  • the cleaning method include a dry process method exposed to plasma and the like, and a wet process method in contact with a chemical solution, but it is desirable to use a dry process method from the viewpoint of simplicity of the process.
  • a metal reflection layer 117 is formed by sputtering.
  • a sputtering method in which the sputtering conditions are controlled is used.
  • the coverage of the metal reflective layer 117 can be enhanced, and the metal reflective layer 117 is formed that covers the bonding layer 110 and has an inclined surface 117c that gradually decreases in thickness toward the outer periphery. .
  • a bonding layer 119 is formed by sputtering.
  • a sputtering method with controlled sputtering conditions is used.
  • the coverage of the bonding layer 119 can be increased, the outer peripheral shape is formed along the inner wall shape of the opening 23a of the mask 23, the metal reflective layer 117 is covered, and the film thickness is directed outward.
  • a bonding layer 119 (bonding pad electrode 120) having an inclined surface 119c that gradually becomes thinner at the outer peripheral portion 120d is formed (see FIG. 33D).
  • the mask 23 made of a crosslinked polymer is peeled off by being immersed in a resist stripping solution.
  • a bonding pad electrode 120 including the metal reflective layer 117 and the bonding layer 119 is formed.
  • a mask 23 having an opening 23a having an inner wall shape whose cross-sectional area gradually increases toward the bottom surface is formed, and the bonding layer 110, the metal reflective layer 117, and the bonding layer 119 have high coverage. Since it is formed by the sputtering method, a layer having a different inclination angle is formed in the shadowed area of the mask 23 when viewed from the sputtering direction according to the thickness of each layer constituting the bonding layer 110, the metal reflection layer 117, and the bonding layer 119. Is done. As a result, inclined surfaces 110c, 117c, and 119c are formed on the outer peripheral portions of the bonding layer 110, the metal reflective layer 117, and the bonding layer 119, respectively, with the thickness gradually decreasing toward the outside.
  • Heat treatment process Thereafter, heat treatment is performed at a temperature of 80 ° C. to 700 ° C. in order to improve the adhesion between the ohmic bonding layer 9 and the bonding layer 110.
  • the heat treatment here can be performed in the same manner as the heat treatment for crystallizing the translucent electrode 109 made of an amorphous IZO film. Therefore, for example, in the case where the ohmic junction layer 9 is an amorphous IZO film, the heat treatment here causes the amorphous IZO film to include an IZO film containing a hexagonal In 2 O 3 crystal or a bixbite structure InZO.
  • the IZO film contains 2 O 3 crystals.
  • edge protective film 10b that covers the outer edge of the bonding pad electrode 120 is formed across a portion that becomes a joint with the film 10a (see FIG. 33D). In the present embodiment, the edge protective film 10b is formed over the entire region excluding the region where the central portion of the bonding pad electrode 120 is exposed when viewed in plan.
  • the edge protection film 10b is formed as the bonding pad.
  • the inclined surface 119c of the electrode 120 is easily formed with a uniform thickness. This prevents the formation of a portion where the edge protection film 10b is not formed on the joint portion between the outer edge portion (contour line) of the bonding pad electrode 120 and the protection film 10a.
  • the edge protective film 10b straddling the portion that becomes the joint between the portion (contour line) and the protective film 10a can be formed in a uniform film thickness by being easily adhered. In this way, the semiconductor light emitting device 1 including the n-type electrode 108 and the p-type electrode 111 shown in FIG. 26 is formed.
  • the n-type electrode 108 and the p-type electrode 111 are connected to the ohmic junction layer 9 formed on the upper surface 106c of the stacked semiconductor layer 20 or the exposed surface 104c of the n contact layer 104a, and the ohmic contact layer 9 is formed.
  • a bonding layer 110 formed on the bonding layer 9 and a bonding pad electrode 120 formed so as to cover the bonding layer 110 are provided.
  • Both the n-type electrode 108 and the p-type electrode 111 are connected to the bonding layer 110.
  • the bonding pad electrode 120 provide a sufficiently high bonding force between the ohmic bonding layer 9 and the bonding pad electrode 120. Therefore, the n-type electrode 108 and the p-type electrode 111 having excellent bonding properties are obtained. It will be prepared.
  • the bonding pad electrode 120 having the inclined surface 119c whose thickness is gradually reduced toward the outside on the outer peripheral portion 120d is formed so as to cover the bonding layer 110. Therefore, any part of the bonding layer 110 is not exposed from below the bonding pad electrode 120. Therefore, according to the semiconductor light emitting device 1 of the present embodiment, air or moisture outside the semiconductor light emitting device 1 can be effectively prevented from entering the bonding layer 110, and excellent corrosion resistance can be obtained and the bonding layer 110 can be obtained.
  • the laminated semiconductor layer 20 and the translucent electrode 109 and the excellent bonding property between the bonding pad electrode 120 can be obtained.
  • protection is performed so as to cover a region excluding the region where the ohmic junction layer 9 of the p-type electrode 111 is formed and the region where the ohmic junction layer 9 of the n-type electrode 108 is formed. Since the film 10a is formed and the outer edge portion of the bonding layer 110 and the outer edge portion of the bonding pad electrode 120 are disposed on the protective film 10a, much more excellent corrosion resistance and bondability can be obtained.
  • the bonding pad electrode 120 is composed of the metal reflective layer 117 and the bonding layer 119, and no part of the bonding layer 110 is exposed from under the metal reflective layer 117. In addition, any part of the metal reflection layer 117 is not exposed from below the bonding layer 119, and the bonding layer 110 is double covered with the metal reflection layer 117 and the bonding layer 119. Furthermore, in the semiconductor light emitting device 1 of the present embodiment, the outer edge portion of the bonding pad electrode 120 is disposed on the protective film 10a.
  • the semiconductor light emitting device 1 of the semiconductor light emitting device 1 has to pass through the joint surface between the protective film 10a and the bonding layer 119 and the joint surface between the protective film 10a and the metal reflective layer 117. External air or moisture cannot enter the bonding layer 110. Therefore, in the present embodiment, air or moisture outside the semiconductor light emitting element 1 can be effectively prevented from entering the bonding layer 110, and the deterioration of the bonding property and corrosion resistance due to the deterioration of the bonding layer 110 is effective. Can be prevented.
  • the edge protection film 10b that covers the outer edge of the bonding pad electrode 120 and exposes a part on the bonding pad electrode 120 is formed, so that it is further excellent. Corrosion resistance and bondability are obtained.
  • the bonding pad electrode 120 having the inclined surface 119c whose thickness is gradually reduced toward the outside on the outer peripheral portion 120d is formed so as to cover the bonding layer 110. Therefore, the contact area between the outer peripheral portion 120d of the bonding pad electrode 120 and the lower surface of the outer peripheral portion 120d of the bonding pad electrode 120 (the protective film 10a in this embodiment) is sufficiently secured, and excellent bonding is achieved. In addition, it is possible to effectively prevent air and moisture from entering the bonding layer 110 from the outside through the gap between the outer peripheral portion 120d of the bonding pad electrode 120 and the lower surface thereof, which is even better. Corrosion resistance is obtained.
  • the n-type electrode 108 and the p-type electrode 111 are the same except that the translucent electrode 109 is not provided on the n-type electrode 108.
  • the n-type electrode 108 and the p-type electrode 111 can be formed at the same time, and the productivity can be easily manufactured.
  • the n-type electrode is formed of a metal such as Ti / Au from the exposed surface on the exposed surface 104c of the n contact layer 104a, the n-type electrode And the p-type electrode 111 are not formed simultaneously.
  • the n-type electrode 108 and the p-type electrode 111 cover and cover the n-type electrode 108 except that the translucent electrode 109 is not provided. If the bonding pad electrodes are the same, the manufacturing conditions for both the n-type electrode 108 and the p-type electrode 111 can be easily optimized. Therefore, in the semiconductor light emitting device 1 of the present embodiment, the n-type electrode excellent in the adhesion between the ohmic junction layer 9 and the junction layer 110 is obtained by optimizing the manufacturing conditions of the n-type electrode 108 and the p-type electrode 111. 108 and the p-type electrode 111 may be provided.
  • both of the process of manufacturing the n-type electrode 108 and the process of manufacturing the p-type electrode 111 improve the adhesion between the ohmic junction layer 9 and the junction layer 110. Since the heat treatment is performed at a temperature of 250 ° C. to 700 ° C., the bonding layer 110 having excellent adhesion with the ohmic bonding layer 9 is obtained, and the bonding between the ohmic bonding layer 9 and the bonding pad electrode 120 is excellent. A semiconductor light emitting device 1 can be obtained.
  • both the step of manufacturing the n-type electrode 108 and the step of manufacturing the p-type electrode 111 are performed on the upper surface 106c of the stacked semiconductor layer 20 or the n-contact layer 104a.
  • Forming the ohmic bonding layer 9 on the exposed surface 104c, forming the bonding layer 110 on the ohmic bonding layer 9, forming the bonding pad electrode 120 so as to cover the bonding layer 110, and ohmic bonding layer In order to improve the adhesion between the adhesive layer 9 and the bonding layer 110, a process of performing a heat treatment at a temperature of 250 ° C. to 700 ° C. is provided.
  • a process of manufacturing the n-type electrode 108 and a process of manufacturing the p-type electrode 111 can be the same. Material used for the fine p-type electrode 111 can be easily manufactured as compared with the case where all different.
  • the pad forming step and the heat treatment step are simultaneously performed in the step of manufacturing the n-type electrode 108 and the step of manufacturing the p-type electrode 111. Compared with the case where the process is performed separately, it can be manufactured easily and efficiently, and the productivity is excellent.
  • the ohmic junction layer 9, the junction layer 110, the bonding pad electrode 120, and the p-type electrode constituting the n-type electrode 108 are used for easy and efficient production.
  • the ohmic junction layer 9, the junction layer 110, and the bonding pad electrode 120 that form the layer 111 are described as an example, but the ohmic junction layer 9, the junction layer 110, and the bonding pad electrode 120 are used as the n-type electrode 108.
  • the p-type electrode 111 may be formed separately, or only a part of the ohmic junction layer 9, the junction layer 110, and the bonding pad electrode 120 constituting the n-type electrode 108 and the p-type electrode 111 is formed. You may form separately.
  • the inner wall 109d of the hole 109a that emerges from the translucent electrode 109 by forming the hole 109a is superior in adhesion to the ohmic bonding layer 9 compared to the upper surface 109c of the translucent electrode 109.
  • the p-type electrode 111 having excellent adhesion of the ohmic junction layer 9 can be obtained as compared with the case where the ohmic junction layer 9 is formed on the upper surface 109c of the translucent electrode 109. .
  • FIG. 34 is a diagram showing another example of the semiconductor light emitting device of the present invention, and is a schematic cross-sectional view of the semiconductor light emitting device.
  • the semiconductor light emitting device 1a of the present embodiment shown in FIG. 34 is different from the semiconductor light emitting device 1 shown in FIG. 26 only in that the protective film 10a and the edge protective film 10b are not formed. This is the same as the semiconductor light emitting device 1 shown in FIG. Therefore, the same members as those of the twelfth embodiment are denoted by the same reference numerals, and description thereof is omitted. Further, the semiconductor light emitting device 1a of the present embodiment can be formed in the same manner as the semiconductor light emitting device 1 shown in FIG. 26 except that the protective film 10a and the edge protective film 10b are not formed.
  • the n-type electrode 118 and the p-type electrode 111a are formed on the upper surface 106c of the laminated semiconductor layer 20 or the exposed surface 104c of the n-contact layer 104a.
  • the bonding layer 110 formed on the ohmic bonding layer 9, and the bonding pad electrode 120 formed so as to cover the bonding layer 110, both the n-type electrode 118 and the p-type electrode 111 a are provided.
  • a sufficiently high bonding force between the ohmic bonding layer 9 and the bonding pad electrode 120 can be obtained by the bonding layer 110 and the bonding pad electrode 120.
  • both the step of manufacturing the n-type electrode 118 and the step of manufacturing the p-type electrode 111a are performed by the ohmic junction layer 9 and the junction layer 110. Since the step of performing a heat treatment at 250 ° C. to 700 ° C. for improving the adhesion of the substrate is obtained, the bonding layer 110 having excellent adhesion to the ohmic bonding layer 9 is obtained, and the ohmic bonding layer 9 and the bonding pad electrode 120 are bonded to each other. A semiconductor light emitting device 1a having excellent bonding properties is obtained.
  • the semiconductor light emitting device 1a of the present embodiment shown in FIG. 34 similarly to the semiconductor light emitting device 1 shown in FIG. 26, except that the translucent electrode 109 is not provided on the n type electrode 118, the n type is also provided. Since the electrode 118 and the p-type electrode 111a are the same, the n-type electrode 118 and the p-type electrode 111a can be formed at the same time, and the productivity can be easily and efficiently manufactured. Also in the semiconductor light emitting device 1a of this embodiment shown in FIG. 34, both the n-type electrode 118 and the p-type electrode 111a can be manufactured under optimum conditions.
  • FIG. 35 is a diagram showing another example of the semiconductor light emitting device of the present invention, and is a schematic cross-sectional view of the semiconductor light emitting device.
  • the semiconductor light emitting device 1b of the present embodiment shown in FIG. 35 is different from the semiconductor light emitting device 1 shown in FIG. 26 in that the protective film 10a is not formed and the center portion of the bonding pad electrode 120 is viewed in plan view.
  • the upper surface protective film 10 is provided on the entire upper surface 109c of the translucent electrode 109 and the entire exposed surface 104c of the n contact layer 104a except for the exposed region. The rest is the same as the semiconductor light emitting device 1 shown in FIG.
  • the upper surface protective film 10 can have the same thickness made of the same material as the protective film 10a in the semiconductor light emitting device 1 shown in FIG.
  • FIG. 36 is a process diagram for explaining a process of manufacturing the n-type electrode 128 and the p-type electrode 111b, and is an enlarged cross-sectional view showing only a part of a region where the p-type electrode 111b is manufactured. It is. Note that the step of forming the n-type electrode 128 is the same as the step of forming the p-type electrode 111b except that the step of providing the translucent electrode 109 is not performed. The illustration of the area where the product is manufactured is omitted.
  • n-contact layer 104a of the laminated semiconductor layer 20 is exposed in the same manner as in the semiconductor light emitting device 1 shown in FIG. 26, and p of the laminated semiconductor layer 20 is obtained in the same manner as in the semiconductor light emitting device 1 shown in FIG.
  • a translucent electrode 109 is formed on the type semiconductor layer 106.
  • the translucent electrode 109 formed here is an amorphous IZO film
  • the amorphous IZO film can be crystallized by performing heat treatment in the same manner as the semiconductor light emitting element 1 shown in FIG. preferable.
  • the resist 21 is applied on the exposed surface 104c of the n-contact layer 104a, and the resist 21 is dried, and the semiconductor light emitting device 1 shown in FIG.
  • the upper surface 109c of the translucent electrode 109 and the n-contact layer 104a are exposed as shown in FIG.
  • an inversely tapered mask 23 having an opening 23a having an inner wall shape whose cross-sectional area gradually increases toward the bottom surface is formed. 36B, the opening 23a of the mask 23 formed on the translucent electrode 109 is formed at a position where the hole 109a of the translucent electrode 109 is exposed.
  • the bonding layer 110, the metal reflective layer 117, and the bonding layer 119 are sequentially formed in the same manner as the semiconductor light emitting device 1 shown in FIG. Thereafter, the mask 23 is removed in the same manner as the semiconductor light emitting device 1 shown in FIG. As a result, as shown in FIG. 36E, a bonding pad electrode 120 composed of the metal reflective layer 117 and the bonding layer 119 is formed. Also in the present embodiment, similar to the semiconductor light emitting device 1 shown in FIG. 26, the inclined surface 110 c that gradually decreases in thickness toward the outside on the outer peripheral portions of the bonding layer 110, the metal reflection layer 117, and the bonding layer 119, respectively. 117c and 119c are formed.
  • Heat treatment process Next, in the same manner as in the semiconductor light emitting device 1 shown in FIG. 26, heat treatment for improving the adhesion between the ohmic junction layer 9 and the junction layer 110 is performed.
  • a top protective film 10 is formed on the entire upper surface.
  • the semiconductor light emitting element 1b including the n-type electrode 128 and the p-type electrode 111b shown in FIG. 35 is formed.
  • the n-type electrode 128 and the p-type electrode 111b are formed on the upper surface 106c of the laminated semiconductor layer 20 or the exposed surface 104c of the n-contact layer 104a.
  • the bonding layer 110 formed on the ohmic bonding layer 9, and the bonding pad electrode 120 formed so as to cover the bonding layer 110, both the n-type electrode 128 and the p-type electrode 111 b are provided.
  • a sufficiently high bonding force between the ohmic bonding layer 9 and the bonding pad electrode 120 can be obtained by the bonding layer 110 and the bonding pad electrode 120.
  • both the process of manufacturing the n-type electrode 128 and the process of manufacturing the p-type electrode 111b are performed by the ohmic junction layer 9 and the junction layer 110. Since the step of performing a heat treatment at 250 ° C. to 700 ° C. for improving the adhesion of the substrate is obtained, the bonding layer 110 having excellent adhesion to the ohmic bonding layer 9 is obtained, and the ohmic bonding layer 9 and the bonding pad electrode 120 are bonded to each other. A semiconductor light emitting device 1b having excellent bonding properties is obtained.
  • the semiconductor light emitting device 1b of the present embodiment similarly to the semiconductor light emitting device 1 shown in FIG. 26, except that the n-type electrode 128 is not provided with the translucent electrode 109, the n-type electrode 128 and p Since the mold electrode 111b is the same, the n-type electrode 128 and the p-type electrode 111b can be formed at the same time, and the productivity that can be easily and efficiently manufactured is excellent. Also in the semiconductor light emitting device 1b of this embodiment shown in FIG. 35, both the n-type electrode 128 and the p-type electrode 111b can be manufactured under optimum conditions.
  • FIG. 37 is a schematic sectional view showing an example of the lamp of the present invention.
  • the lamp 3 of the present embodiment is a shell type, and is mounted with the semiconductor light emitting device 1 of the present invention shown in FIG. 26 as a semiconductor light emitting device.
  • the lamp 3 is, for example, a combination of the semiconductor light emitting element 1 and a phosphor, and can be configured as known to those skilled in the art by means known to those skilled in the art.
  • the emission color can be changed by combining the semiconductor light emitting element 1 and the phosphor, but such a technique can be adopted without any limitation in the lamp of this embodiment. It is.
  • the lamp 3 includes a frame 31 bonded to the bonding pad electrode 120 of the p-type electrode 111 of the semiconductor light emitting element 1 with a wire 33, and an n-type electrode 108 of the semiconductor light emitting element 1.
  • the other frame 32 joined to the bonding pad electrode 120 with a wire 34 and a mold 35 made of a transparent resin formed so as to surround the periphery of the semiconductor light emitting element 1 are provided.
  • the lamp 3 according to the present embodiment includes the semiconductor light emitting device of the present invention including the n-type electrode 108 and the p-type electrode 111 having excellent bonding properties and corrosion resistance as the semiconductor light emitting device. It is excellent in that it can be manufactured with good yield.
  • the lamp 3 of the present embodiment can be used for any purposes such as a general-use bullet type, a side view type for a portable backlight, and a top view type used for a display.
  • the lamp 3 manufactured from the semiconductor light emitting device of the present invention has the excellent effects as described above, a backlight, a mobile phone, a display, various panels, a computer, a game incorporating the lamp manufactured by this technology.
  • Electronic devices such as machines and lighting, and mechanical devices such as automobiles incorporating the electronic devices can give high reliability in use as products.
  • a battery-driven device such as a backlight, a cellular phone, a display, a game machine, and lighting, a product including a light-emitting element with excellent corrosion resistance and high reliability can be provided, which is preferable.
  • the present invention will be specifically described based on examples. However, the present invention is not limited only to these examples.
  • Example 1 ⁇ Fabrication of semiconductor light emitting device>
  • a semiconductor light emitting device made of a gallium nitride compound semiconductor (hereinafter, the semiconductor light emitting device of Example 1) was manufactured as follows. First, an underlayer made of undoped GaN having a thickness of 8 ⁇ m was formed on a substrate made of sapphire via a buffer layer made of AlN.
  • a Si-doped n-type GaN contact layer having a thickness of 2 ⁇ m and an n-type In 0.1 Ga 0.9 N cladding layer having a thickness of 250 nm a Si-doped GaN barrier layer having a thickness of 16 nm and a thickness of 2 A .5 nm In 0.2 Ga 0.8 N well layer was stacked five times, and finally a light emitting layer having a multiple quantum well structure in which a barrier layer was provided was formed.
  • a Mg-doped p-type Al 0.07 Ga 0.93 N cladding layer having a thickness of 10 nm and an Mg-doped p-type GaN contact layer having a thickness of 150 nm were sequentially formed.
  • the gallium nitride-based compound semiconductor layer was stacked by MOCVD under normal conditions well known in the technical field.
  • a protective film made of SiO 2 was formed. Further, an inversely tapered mask was formed according to the mask forming process shown in the first embodiment. As the resist, AZ5200NJ (product name: manufactured by AZ Electronic Materials Co., Ltd.) was used. In the state equipped with the reverse taper type mask, the protective film made of SiO 2 is etched to expose a part of the upper surface of the translucent electrode and the n-type contact layer. A bonding layer was formed.
  • n-side electrode also has the same electrode stack structure as the p-side electrode.
  • the reflectance of the bonding pad electrode produced in this example was 70% in the wavelength region of 460 nm. This value was measured with a spectrophotometer using a glass dummy substrate placed in the same chamber when the bonding pad electrode was formed. In addition, a bonding test was performed on 100,000 chips (number of bonding failures), but there was no pad peeling.
  • the chip was subjected to a high temperature and high humidity test according to a conventional method.
  • a test method a chip is placed in a high-temperature and high-humidity device (Isuzu Seisakusho, ⁇ -SERIES), and a light emission test of 100 chips each in an environment of a temperature of 85 ° C. and a relative humidity of 85 RH% (amount of power applied to the chip). 5 mA, 2000 hours), the number of defects was 0.
  • Example 1 The semiconductor light emitting device of Example 1 was submerged in water in a water tank with a current application value of 20 mA, a forward voltage of 3.0 V, and a light emission output of 19.5 mW. After being kept for 10 minutes in that state, it was pulled up from the water and the luminescence characteristics were measured again. The light emission characteristics were almost the same as before submerging in water.
  • Example 2 to 20 Semiconductor light emitting devices of Examples 2 to 20 were manufactured in the same manner as Example 1 except that the p-type electrode was formed with the material and thickness shown in Table 1. Evaluation was performed in the same manner as in Example 1, and the evaluation results shown in Table 2 were obtained.
  • FIG. 12 is an enlarged cross-sectional view showing a p-type electrode of the semiconductor light emitting device of Comparative Example 1.
  • the p-type electrode 201 of this semiconductor light emitting element is composed of a translucent electrode 109 made of ITO, a bonding layer 210 made of Cr, and a bonding pad electrode 220.
  • the upper surface 109c of the translucent electrode 109 is covered with the protective film 10 made of SiO 2, and the bonding layer 210 is uniform on the upper surface 109c of the translucent electrode 109 exposed by opening a part of the protective film 10. It is formed with a thickness.
  • a metallic reflective layer 217 made of Al is formed on the bonding layer 210, and a barrier layer made of Ti and a bonding layer 219 made of Au are formed on the metallic reflective layer 217 in this order.
  • the side surfaces of the bonding layer 210, the metal reflection layer 217, the barrier layer (not shown), and the bonding layer 219 are formed substantially perpendicular to the upper surface 109 c of the translucent electrode 109.
  • the semiconductor light emitting device of Comparative Example 1 was formed as follows. First, in the same manner as in Example 1, a gallium nitride-based compound semiconductor layer was laminated by MOCVD under normal conditions well known in the technical field. Next, a translucent electrode 109 made of ITO having a thickness of 200 nm was formed on the p-type GaN contact layer. Next, as shown in FIG. 13A, after forming the protective film 10 made of SiO 2 on the upper surface 109c of the translucent electrode 109, a resist is applied and dried on the protective film 10 to form the resist portion 21. Formed. Next, as shown in FIG.
  • the resist portion 21 corresponding to the portion where the bonding pad electrode is formed is exposed to form a soluble resist by using a normal photolithography method.
  • the resist part 21 having an end surface perpendicular to the upper surface of the protective film 10 was formed by removing with a predetermined developer.
  • the protective film 10 is etched using the remaining resist portion 21 as a mask, and the protective film 10 corresponding to the portion where the bonding pad electrode is formed is removed.
  • the upper surface 109c of the translucent electrode 109 and the n-type contact layer were exposed.
  • a bonding layer 210 of 20 Cr Cr was formed by sputtering so as to cover the exposed upper surface 109c of the transparent electrode 109 and the upper surface 21a of the resist portion 21.
  • a metal reflective layer 217 made of 200 nm Al was formed so as to cover the bonding layer 210. Furthermore, as shown in FIG.
  • a barrier layer (not shown) made of 80 nm Ti is formed so as to cover the metal reflective layer 217, and a bonding layer made of 200 nm Au is covered so as to cover the barrier layer. 219 was formed.
  • the resist portion 21 is stripped with a resist stripping solution to bond a three-layer structure comprising a metal reflective layer 217, a barrier layer, and a bonding layer 219 on the bonding layer 210 as shown in FIG.
  • a p-type electrode 201 in which the pad electrode 220 was laminated was formed. By this step, the p-type electrode 201 having the structure shown in FIG. 12 was formed.
  • the n-side electrode also has the same electrode stack structure as the p-side electrode.
  • the reflectance of the bonding pad electrode of Comparative Example 1 was 90% in the wavelength region of 460 nm. This value was measured with a spectrophotometer using a glass dummy substrate placed in the same chamber when the bonding pad electrode was formed. In addition, a bonding test was performed on 100,000 chips (number of bonding defects), and pad peeling was 50 chips.
  • ⁇ High temperature and high humidity test> In the same manner as in Example 1, a high temperature and high humidity test of the chip was performed. When a light emission test was performed with 100 chips each in an environment of a temperature of 85 ° C. and a relative humidity of 85 RH% (the amount of current applied to the chips was 5 mA, 2000 hours), the number of defects was 65.
  • Example 1 The corrosion resistance test was conducted in the same manner as in Example 1.
  • the semiconductor light-emitting device of Comparative Example 1 was submerged in water in a water tank with a current application value of 20 mA, a forward voltage of 3.0 V, and a light emission output of 20 mW. It was not shining even if it was kept in that state for a few seconds.
  • Comparative Example 2 and Comparative Example 3 Semiconductor light emitting devices of Comparative Example 2 and Comparative Example 3 were manufactured in the same manner as Comparative Example 1 except that the p-type electrode was formed with the materials and thicknesses shown in Table 1. Evaluation was performed in the same manner as in Comparative Example 1, and the evaluation results shown in Table 2 were obtained.
  • Example 21 A semiconductor light emitting device made of a gallium nitride compound semiconductor shown in FIGS. 14 to 16 was manufactured as follows.
  • an underlayer 103 made of undoped GaN having a thickness of 8 ⁇ m was formed on a substrate 101 made of sapphire via a buffer layer 102 made of AlN.
  • an n-contact layer 104a made of Si-doped n-type GaN having a thickness of 2 ⁇ m and an n-cladding layer 104b made of n-type In 0.1 Ga 0.9 N having a thickness of 250 nm were formed.
  • a light-emitting layer 105 having a multiple quantum well structure in which a Si-doped GaN barrier layer having a thickness of 16 nm and an In 0.2 Ga 0.8 N well layer having a thickness of 2.5 nm are stacked five times and finally a barrier layer is provided. Formed. Further, a p-cladding layer 106a made of Mg-doped p-type Al 0.07 Ga 0.93 N having a thickness of 10 nm and a p-contact layer 106b made of Mg-doped p-type GaN having a thickness of 150 nm were sequentially formed.
  • the stacked semiconductor layer 20 was formed by MOCVD under normal conditions well known in the technical field.
  • Formation of electrodes After forming the laminated semiconductor layer 20 in this manner, patterning was performed by a photolithography technique, and a part of the laminated semiconductor layer 20 in a predetermined region was etched to expose a part of the n contact layer 104a. Next, an n-type electrode 108 made of Ti / Pt / Au was sequentially formed on the exposed surface 104c of the n-contact layer 104a by sputtering.
  • a p-type electrode 111 was formed as shown below.
  • the translucent electrode 109 made of IZO having a thickness of 250 nm was formed on the p-type GaN contact layer 106b, and the transparent protective film 10a made of SiO 2 having a thickness of 100 nm was formed on the translucent electrode 109.
  • AZ5200NJ product name: manufactured by AZ Electronic Materials Co., Ltd.
  • a reverse-tapered mask 23 having an opening 23a having an inner wall shape that gradually widens was formed.
  • the transparent protective film 10a exposed from the opening 23a of the mask 23 is removed by RIE (reactive ion etching) from a direction perpendicular to the upper surface 109c of the translucent electrode 109 to form the opening 10d. Then, the upper surface 109c of the translucent electrode 109 was exposed from the opening 10d. Next, the translucent electrode 109 exposed from the opening 23 a of the mask 23 was dry-etched to form a bonding recess 109 a having a depth of 10 nm on the upper surface 109 c of the translucent electrode 109.
  • RIE reactive ion etching
  • a bonding layer 110 made of Cr having a maximum thickness of 10 mm was formed by sputtering so as to cover the bonding recess 109a of the translucent electrode 109.
  • a metal reflective layer 117 made of Pt having a maximum film thickness of 100 nm was formed by sputtering, covering the bonding layer 110 and having an inclined surface 117c that gradually decreases in thickness toward the outside at the outer periphery.
  • the shape of the outer peripheral portion is formed along the inner wall shape of the opening 23a of the mask 23, covers the metal reflection layer 117, and the inclined surface 119c whose thickness gradually decreases toward the outer portion is formed on the outer peripheral portion.
  • a bonding layer 119 made of Au having a maximum thickness of 1100 nm at 120d was formed.
  • the bonding pad electrode 120 composed of the metal reflection layer 117 and the bonding layer 119 was formed.
  • the mask 23 was peeled by being immersed in a resist stripping solution.
  • it is a substantially donut-shaped shape that exposes the central portion of the bonding pad electrode 120, and is a portion that becomes a joint between the outer edge portion (contour line) of the bonding pad electrode 120 and the transparent protective film 10 a
  • An edge protective film 10b made of SiO 2 having a width of 5 ⁇ m and a maximum thickness of 100 nm was formed to cover the outer edge of the bonding pad electrode 120.
  • the semiconductor light emitting device 1 of Example 21 including the p-type electrode 111 shown in FIGS. 14 to 16 was obtained.
  • Example 21 and Comparative Example 4 For the semiconductor light emitting devices of Example 21 and Comparative Example 4, the forward voltage was measured. As a result, in Example 21 and Comparative Example 4, the forward voltage at a current application value of 20 mA was 3.0 V when energized by the probe needle. Thereafter, the semiconductor light emitting devices of Example 21 and Comparative Example 4 were mounted in a TO-18 can package, and the light emission output was measured by a tester. As a result, in both Example 21 and Comparative Example 4, the light emission output at an applied current of 20 mA was 20 mW. Further, in both Example 21 and Comparative Example 4, it was confirmed that the light emission distribution on the light emitting surface emitted light on the entire surface under the positive electrode.
  • Example 21 when the reflectance of the bonding pad electrode produced in Example 21 and Comparative Example 4 was measured, it was 80% in the wavelength region of 460 nm. The reflectance was measured using a spectrophotometer for the same thin film as the bonding pad electrode formed on the glass dummy substrate placed in the chamber when the bonding pad electrode was formed. Further, a bonding test was performed on the semiconductor light emitting elements (chips) of Example 211 and Comparative Example 4. As a result, in Example 21, no pad peeling (bonding failure) was found in one chip among 100,000 chips. On the other hand, in Comparative Example 4, pad peeling (bonding failure) was 3 chips out of 100,000 chips.
  • Example 21 The semiconductor light emitting devices (chips) of Example 21 and Comparative Example 4 were placed in a high-temperature and high-humidifier (Isuzu Seisakusho, ⁇ -SERIES), and 100 chips under an environment of a temperature of 85 ° C. and a relative humidity of 85 RH%.
  • a light emission test (amount of current applied to the chip: 5 mA, 2000 hours) was performed. As a result, the number of defects in Example 21 was 0, but the number of defects in Comparative Example 4 was 20.
  • Example 21 The semiconductor light-emitting elements of Example 21 and Comparative Example 4 were submerged in water in a state where light was emitted with a current application value of 20 mA, a forward voltage of 3.0 V, and a light emission output of 20 mW.
  • the semiconductor light emitting device was held for 10 minutes while being submerged in water in a water tank, then pulled up from the water, and light emission characteristics were measured again.
  • the semiconductor light-emitting element did not shine only by being held for several seconds while being submerged in the water of the water tank.
  • Example 22 to 41 Semiconductor light emitting devices of Examples 22 to 41 were manufactured in the same manner as Example 21 except that the p-type electrode was formed with the material and thickness shown in Table 3. Evaluation was performed in the same manner as in Example 21, and the evaluation results shown in Table 4 were obtained.
  • Comparative Examples 5 to 7 Semiconductor light emitting devices of Comparative Examples 5 to 7 were manufactured in the same manner as Comparative Example 4 except that p-type electrodes were formed with the materials and thicknesses shown in Table 3. Evaluation was performed in the same manner as in Comparative Example 4, and the evaluation results shown in Table 4 were obtained.
  • Example 42 The p-type electrode (ohmic junction layer, junction layer, bonding pad electrode (metal reflection layer, barrier layer, bonding layer)) and n-type electrode have the configurations shown in Table 5 to the gallium nitride compound semiconductor shown in FIGS.
  • a semiconductor light emitting device was manufactured as follows.
  • an underlayer 103 made of undoped GaN having a thickness of 8 ⁇ m was formed on a substrate 101 made of sapphire via a buffer layer 102 made of AlN.
  • an n-contact layer 104a made of Si-doped n-type GaN having a thickness of 2 ⁇ m and an n-cladding layer 104b made of n-type In 0.1 Ga 0.9 N having a thickness of 250 nm were formed.
  • a light-emitting layer 105 having a multiple quantum well structure in which a Si-doped GaN barrier layer having a thickness of 16 nm and an In 0.2 Ga 0.8 N well layer having a thickness of 2.5 nm are stacked five times and finally a barrier layer is provided. Formed. Further, a p-cladding layer 106a made of Mg-doped p-type Al 0.07 Ga 0.93 N having a thickness of 10 nm and a p-contact layer 106b made of Mg-doped p-type GaN having a thickness of 150 nm were sequentially formed.
  • the stacked semiconductor layer 20 was formed by MOCVD under normal conditions well known in the technical field.
  • Formation of electrodes After forming the laminated semiconductor layer 20 in this manner, patterning was performed by a photolithography technique, and a part of the laminated semiconductor layer 20 in a predetermined region was etched to expose a part of the n contact layer 104a. Next, a light-transmitting electrode 109 made of IZO having a thickness of 250 nm is formed on the p-type GaN contact layer 106b, and SiO nm having a thickness of 100 nm is formed on the light-transmitting electrode 109 and the exposed surface 104c of the n-contact layer 104a. A protective film 10a made of 2 was formed.
  • the protective film 10a is removed by RIE (reactive ion etching) from a direction perpendicular to the upper surface 109c of the translucent electrode 109 to form an opening 10d, and the translucent electrode 109 is formed from the opening 10d.
  • the upper surface 109c and the exposed surface 104c of the n contact layer 104a were exposed.
  • the hole 109a was formed by dry etching the translucent electrode 109. Thereafter, heat treatment was performed at a temperature of 650 ° C. in a nitrogen atmosphere to crystallize the amorphous IZO film constituting the translucent electrode 109.
  • AZ5200NJ product name: manufactured by AZ Electronic Materials Co., Ltd.
  • AZ5200NJ product name: manufactured by AZ Electronic Materials Co., Ltd.
  • AZ5200NJ product name: manufactured by AZ Electronic Materials Co., Ltd.
  • a reverse taper type mask 23 having an opening 23a having an inner wall shape whose cross-sectional area gradually increases toward the bottom surface was formed.
  • the opening 23 of the mask 23 formed on the translucent electrode 109 was formed at a position where the hole 109 a of the translucent electrode 109 was exposed from the opening 23.
  • openings of the hole 109a of the translucent electrode 109 or the exposed surface 104c of the n-contact layer 104a, the inner wall 109d of the hole 109a of the translucent electrode 109, and the protective film 10a are formed by sputtering.
  • An ohmic junction layer 9 made of IZO having a thickness of 100 nm was formed so as to continuously cover the end 10c of the portion 10d.
  • a bonding layer 110 made of Cr having a maximum film thickness of 10 nm was formed so as to continuously cover the ohmic bonding layer 9 and the end 10c of the opening 10d of the protective film 10a.
  • a metal reflective layer 117 made of Pt having a maximum film thickness of 100 nm was formed by sputtering, covering the bonding layer 110 and having an inclined surface 117c that gradually decreases in thickness toward the outside at the outer periphery.
  • the shape of the outer peripheral portion is formed along the inner wall shape of the opening 23a of the mask 23, covers the metal reflection layer 117, and the inclined surface 119c whose thickness gradually decreases toward the outer portion is formed on the outer peripheral portion.
  • a bonding layer 119 made of Au having a maximum thickness of 1100 nm at 120d was formed.
  • the bonding pad electrode 120 composed of the metal reflection layer 117 and the bonding layer 119 was formed.
  • the mask 23 was peeled by being immersed in a resist stripping solution.
  • Heat treatment process Subsequently, in order to improve the adhesion between the ohmic bonding layer 9 and the bonding layer 110, heat treatment was performed at a temperature of 360 ° C. in a nitrogen atmosphere. In addition, the adhesion between the ohmic bonding layer 9 and the bonding layer 110 can be improved without the heat treatment step.
  • the edge protective film 10b made of SiO 2 having a maximum thickness of 250 nm was formed over the entire region excluding the region exposing the central portion of the bonding pad electrode 120 when viewed in plan. In this way, the semiconductor light emitting device 1 of Example 42 including the p-type electrode 111 shown in FIGS. 26 to 28 was obtained.
  • Example 43 to 59 The semiconductor light emitting device of Example 42, except that the p-type electrode (ohmic junction layer, junction layer, bonding pad electrode (metal reflective layer, barrier layer, bonding layer)) and n-type electrode have the configurations shown in Table 5
  • the semiconductor light emitting devices of Examples 43 to 59 which are the same as 1 were manufactured.
  • the n-type electrode 108 made of Ti / Au was formed on the exposed surface 104c of the n-contact layer 104a by sputtering, and (1) openings were formed in the p-type electrode 111. (2) not having an ohmic bonding layer, (3) the side surfaces of the bonding layer 110 and the bonding pad electrode 120 of the light transmitting electrode 109. It is formed substantially perpendicular to the upper surface 109c, and the heat treatment temperature is 275 ° C. (4)
  • the semiconductor light emitting element 1 of Example 42 is the same except that the insulating protective film 10b is not formed.
  • the semiconductor light emitting device of Comparative Example 8 was manufactured.
  • the semiconductor light emitting devices of Examples 42 to 59 and Comparative Example 8 were mounted in a TO-18 can package, and the light emission output was measured by a tester.
  • the results are shown in Table 6.
  • the light emission outputs of Examples 42 to 59 were in the range of 19.5 to 23 mW, and the light emission output of Comparative Example 8 was 21 mW.
  • the reflectance of the bonding pad electrodes produced in Examples 42 to 59 and Comparative Example 8 was measured.
  • the reflectance was measured in the wavelength region of 460 nm using a spectrophotometer for the same thin film as the bonding pad electrode formed on the glass dummy substrate placed in the chamber when the bonding pad electrode was formed. The results are shown in Table 6.
  • ⁇ Chip high temperature and high humidity test> The semiconductor light emitting devices (chips) of Examples 42 to 59 and Comparative Example 8 are placed in a high-temperature and high-humidity device (Isuzu Seisakusho, ⁇ -SERIES), and are formed into 100 chips in an environment of a temperature of 85 ° C. and a relative humidity of 85 RH%. On the other hand, a light emission test (amount of current to the chip of 5 mA, 2000 hours) was performed. The results are shown in Table 6. As shown in Table 6, in Examples 48, 49, and 53 to 59, the number of 100 defects was 0. Also, in other examples, the number of defects was 5 or less, which was very small. On the other hand, in Comparative Example 8, the number of defects was 20 out of 100 chips.
  • Example 60 A lamp (package) in which the semiconductor light-emitting element manufactured in Examples 1 to 59 was mounted according to the same method as described in JP-A-2007-194401 could be produced.
  • a backlight incorporating the lamp could be manufactured.
  • the present invention relates to a semiconductor light emitting device, an electrode thereof, a manufacturing method, and a lamp, and more particularly, to manufacture and use a semiconductor light emitting device including an electrode with improved bonding properties and corrosion resistance, the electrode, the manufacturing method, and the lamp. It can be used in the industry.
  • 104 N-type semiconductor layer, 104a ... n contact Layer 104b ... n clad layer 104c exposed surface (semiconductor layer exposed surface) 105 light emitting layer 105a barrier layer 105b well layer 106 p semiconductor layer 106a p clad 106b ... p contact layer, 106c ... upper surface, 108, 118, 128 ... n-type electrode (the other electrode), 108c ... inclined surface, 108d ... outer periphery, 109 ... translucent electrode, 109a ... joining recess (hole) 109b ... bottom surface, 109c ... upper surface, 109d ... inner wall, 110 ... bonding layer, 110c ...

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

L'invention concerne un élément électroluminescent à semi-conducteur possédant une électrode améliorée en termes de jonction et d'anticorrosion, un procédé de fabrication de cet élément et une lampe. L'élément électroluminescent à semi-conducteur comprend un substrat, une couche à semi-conducteur laminée comportant une couche électroluminescente formée sur le substrat, une électrode (111) formée sur la face supérieure de la couche à semi-conducteur laminée, et l'autre électrode formée par-dessus la face exposée à la couche à semi-conducteur, de laquelle la couche à semi-conducteur laminée est partiellement découpée. L’électrode (111) comprend une couche de jonction (110) et une électrode à plot de connexion (120) formée de façon à recouvrir la couche de jonction (110). L'électrode à plot de connexion (120) possède une épaisseur maximale supérieure à l'épaisseur maximale de la couche de jonction (110) et elle est composée d'une ou deux couches ou plus. Des pentes inclinées (110c), (117c) et (119c), qui sont graduellement amincies vers la circonférence extérieure, sont formées dans les parties de la circonférence extérieure (110d) et (120d) de la couche de jonction (110) et dans l'électrode à plot de connexion (120). Ainsi, il est possible d'améliorer la jonction et l'anticorrosion de l'électrode de l'élément électroluminescent à semi-conducteur.
PCT/JP2009/060926 2008-06-16 2009-06-16 Élément électroluminescent à semi-conducteur, électrode et procédé de fabrication de l'élément et lampe WO2009154191A1 (fr)

Priority Applications (2)

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CN200980131958.1A CN102124574B (zh) 2008-06-16 2009-06-16 半导体发光元件、其电极及制造方法以及灯
US12/999,530 US8569735B2 (en) 2008-06-16 2009-06-16 Semiconductor light-emitting element, electrode and manufacturing method for the element, and lamp

Applications Claiming Priority (8)

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JP2008-157248 2008-06-16
JP2008157248 2008-06-16
JP2008199802A JP5178383B2 (ja) 2008-08-01 2008-08-01 半導体発光素子及び半導体発光素子の製造方法、ランプ
JP2008-199802 2008-08-01
JP2008228133A JP2010062425A (ja) 2008-09-05 2008-09-05 半導体発光素子及び半導体発光素子の製造方法、ランプ
JP2008-228133 2008-09-05
JP2009133177A JP5515431B2 (ja) 2008-06-16 2009-06-02 半導体発光素子、その電極並びに製造方法及びランプ
JP2009-133177 2009-06-02

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Publication number Priority date Publication date Assignee Title
CN103238223A (zh) * 2010-12-08 2013-08-07 日亚化学工业株式会社 氮化物系半导体发光元件
US20140225062A1 (en) * 2011-10-05 2014-08-14 Sharp Kabushiki Kaisha Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor light emitting element

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JPH10107318A (ja) * 1996-09-30 1998-04-24 Sharp Corp 窒化ガリウム系化合物半導体発光素子の電極構造
JPH11340506A (ja) * 1998-05-25 1999-12-10 Rohm Co Ltd 半導体発光素子およびその製法
JP2004006498A (ja) * 2002-05-31 2004-01-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2004260178A (ja) * 2003-02-26 2004-09-16 Osram Opto Semiconductors Gmbh 光電子半導体チップに用いられる電気的なコンタクトならびに該電気的なコンタクトを製造するための方法
JP2005045038A (ja) * 2003-07-23 2005-02-17 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2005209733A (ja) * 2004-01-20 2005-08-04 Nichia Chem Ind Ltd 半導体発光素子
JP2006066903A (ja) * 2004-07-29 2006-03-09 Showa Denko Kk 半導体発光素子用正極
JP2008041866A (ja) * 2006-08-04 2008-02-21 Nichia Chem Ind Ltd 窒化物半導体素子

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Publication number Priority date Publication date Assignee Title
JPH10107318A (ja) * 1996-09-30 1998-04-24 Sharp Corp 窒化ガリウム系化合物半導体発光素子の電極構造
JPH11340506A (ja) * 1998-05-25 1999-12-10 Rohm Co Ltd 半導体発光素子およびその製法
JP2004006498A (ja) * 2002-05-31 2004-01-08 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
JP2004260178A (ja) * 2003-02-26 2004-09-16 Osram Opto Semiconductors Gmbh 光電子半導体チップに用いられる電気的なコンタクトならびに該電気的なコンタクトを製造するための方法
JP2005045038A (ja) * 2003-07-23 2005-02-17 Nichia Chem Ind Ltd 窒化物半導体発光素子
JP2005209733A (ja) * 2004-01-20 2005-08-04 Nichia Chem Ind Ltd 半導体発光素子
JP2006066903A (ja) * 2004-07-29 2006-03-09 Showa Denko Kk 半導体発光素子用正極
JP2008041866A (ja) * 2006-08-04 2008-02-21 Nichia Chem Ind Ltd 窒化物半導体素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103238223A (zh) * 2010-12-08 2013-08-07 日亚化学工业株式会社 氮化物系半导体发光元件
US20140225062A1 (en) * 2011-10-05 2014-08-14 Sharp Kabushiki Kaisha Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor light emitting element

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