WO2009151000A1 - 熱電変換素子 - Google Patents
熱電変換素子 Download PDFInfo
- Publication number
- WO2009151000A1 WO2009151000A1 PCT/JP2009/060317 JP2009060317W WO2009151000A1 WO 2009151000 A1 WO2009151000 A1 WO 2009151000A1 JP 2009060317 W JP2009060317 W JP 2009060317W WO 2009151000 A1 WO2009151000 A1 WO 2009151000A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- spin
- thermoelectric conversion
- dielectric
- conversion element
- hall effect
- Prior art date
Links
- DMESIPKWNCPPMH-UHFFFAOYSA-N CCCCC1(C)CCCC1 Chemical compound CCCCC1(C)CCCC1 DMESIPKWNCPPMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G49/00—Compounds of iron
- C01G49/009—Compounds containing, besides iron, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G49/00—Compounds of iron
- C01G49/0018—Mixed oxides or hydroxides
- C01G49/0054—Mixed oxides or hydroxides containing one rare earth metal, yttrium or scandium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/77—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by unit-cell parameters, atom positions or structure diagrams
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/42—Magnetic properties
Definitions
- the present invention relates to a thermoelectric conversion element, and particularly to a thermoelectric conversion element characterized by a member that generates a spin current by heat.
- thermoelectric effect is expected as such a clean energy source.
- thermoelectric conversion efficiency is not sufficient, and it is necessary to further increase the thermoelectric conversion efficiency for practical use as a clean energy source.
- the direction of generation of the electromotive force V is parallel to the temperature gradient ⁇ T.
- the Seebeck coefficient S, the electrical conductivity ⁇ , and the thermal conductivity ⁇ are all material-specific values. Therefore, the performance index Z is also a material-specific value. In order to realize highly efficient thermoelectric generation, the performance index Z A high thermoelectric conversion element is required. In order to increase the figure of merit Z, it was necessary to develop a new substance.
- This spintronics aims to obtain unprecedented functions and characteristics by simultaneously using the charge of electrons and the degree of freedom of spin, but many of the spintronic functions are driven by spin current.
- spin current has little dissipation of spin angular momentum, it is expected that it can be used for efficient energy transfer, and there is an urgent need to establish a spin current generation method and detection method.
- Non-Patent Document 1 a spin current by spin pumping has been proposed (see, for example, Non-Patent Document 1), and the spin current detection method by the present inventors also provides a spin current by the reverse spin Hall effect. The detection method of this is proposed.
- the performance index Z increases when a substance having a high electrical conductivity ⁇ is used.
- the effect of improving the figure of merit Z by improving the electrical conductivity ⁇ is offset by the thermal conductivity ⁇ . .
- the present inventor has proposed a spin-Seebeck effect element utilizing a junction between a magnetic material such as NiFe and a metal having a large spin orbit interaction such as Pt (see Japanese Patent Application No. 2007-302470 if necessary). ).
- a thermal spin current generated by a temperature gradient in a magnetic material such as NiFe is subjected to spin exchange at the interface with Pt, and the pure spin current generated by the exchange causes a direction perpendicular to the direction of the pure spin current.
- the flowing current is output as a voltage at both ends of the magnetic body.
- the figure of merit Z in this case is also expressed as S s , spin conductivity ⁇ s , and thermal conductivity ⁇ of the Seebeck coefficient of the spin-Seebeck effect element.
- Z S s 2 ⁇ ( ⁇ s / ⁇ ) (2) It is expressed.
- the direction of generation of the electromotive force V is perpendicular to the temperature gradient ⁇ T because the reverse spin Hall effect is used.
- the Seebeck coefficient S s of the spin-Seebeck effect element is proportional to the length in the direction perpendicular to the temperature gradient ⁇ T
- the figure of merit Z can be modulated by the sample size as compared with the conventional Seebeck effect element. There is. That is, by configuring the sample size such that the length in the direction perpendicular to the temperature gradient ⁇ T is increased, an electromotive force V proportional to the length can be obtained.
- the spin current is not a physical conserved quantity, by using such thermal spin current conversion, the spin current can be continuously extracted simply by giving a temperature gradient, and therefore, the thermoelectromotive force. Can also be taken out continuously.
- a metal having a high thermal conductivity ⁇ is used for the thermal spin current generating member. Therefore, when the sample size is increased in order to increase the electromotive force V, a uniform temperature gradient ⁇ It becomes difficult to provide T. Therefore, at present, it is difficult to realize an industrially usable thermoelectric conversion element using an all-metal spin-Seebeck effect element.
- an object of the present invention is to improve the thermoelectric conversion efficiency by increasing the figure of merit of the spin-Seebeck effect element.
- the present invention provides a thermoelectric conversion element, wherein a reverse spin Hall effect member is provided on at least one end side of a thermal spin wave spin current generating member made of a magnetic dielectric, and the thermal spin wave spin current is provided.
- a temperature gradient is provided to the generating member, and a magnetic field is applied by the magnetic field applying means, and the thermal spin wave spin current is converted into a voltage and taken out by the inverse spin Hall effect member.
- the thermal conductivity ⁇ can be reduced by up to about five orders of magnitude compared to conventional metal materials, and the sample size can be increased. Even so, since it becomes easy to provide a uniform temperature gradient ⁇ T, a significant improvement in the figure of merit can be expected.
- the thermal spin current is generated as a thermal spin wave spin current in the temperature gradient direction.
- the magnetic dielectric may be a ferrimagnetic dielectric, a ferromagnetic dielectric, or an antiferromagnetic dielectric.
- an antiferromagnetic layer that contacts the magnetic dielectric and fixes the magnetization direction may be provided as a magnetic field applying means.
- the magnetic dielectric material may be anything as long as it contains Fe or Co. In practice, however, YIG (yttrium iron garnet) or yttrium gallium iron garnet, which is easily available and has a low dissipation of spin angular momentum, That is, it is desirable to use Y 3 Fe 5-x Ga x O 12 (where x ⁇ 5) when expressed in a general formula. This is because Y 3 Fe 5-x Ga x O 12 has a large band gap and therefore has very few conduction electrons, and therefore, the dissipation of spin angular momentum by the conduction electrons is small.
- the antiferromagnetic dielectric is typically nickel oxide or FeO, but most of the magnetic dielectric is an antiferromagnetic dielectric.
- the thickness of the magnetic dielectric layer may be any thickness that exhibits characteristics as a ferromagnetic material or a ferrimagnetic material. For that purpose, the thickness may be 5 nm or more.
- the reverse spin Hall effect member it is desirable to use any of Pt, Au, Pd, Ag, Bi, or an element having an f orbit. Since these elements have a large spin-orbit interaction, the thermal spin wave spin current and the pure spin current can be exchanged with high efficiency at the interface with the magnetic dielectric.
- the thickness of the reverse spin Hall effect member is arbitrary, but if it is too thick, the efficiency deteriorates due to the backflow current. On the other hand, if the thickness is too thin, the resistance becomes high, and the amount of Joule heat generated in the reverse spin Hall effect member increases. Therefore, it is desirable that the thickness be 5 nm or more.
- thermoelectric conversion elements may be provided at different positions along the longitudinal direction of the thermal spin wave spin current generating member, and can be used as a variable voltage battery. Further, by winding the thermoelectric conversion elements connected in series, it is possible to output a large amount of power with a compact configuration.
- the present invention has the characteristics of a spin-Seebeck effect element that can amplify a figure of merit according to the size of a sample, and further facilitates the realization of a uniform temperature gradient ⁇ T by using a magnetic dielectric having a small thermal conductivity ⁇ .
- the figure of merit Z s can be significantly increased, thereby realizing a highly efficient thermoelectric conversion element.
- thermoelectric conversion element of Example 1 of this invention It is explanatory drawing of the use condition of the thermoelectric conversion element of Example 1 of this invention. It is a schematic perspective view of the thermoelectric conversion element of Example 2 of the present invention. It is explanatory drawing of the use condition of the thermoelectric conversion element of Example 2 of this invention. It is a schematic perspective view of the thermoelectric conversion element of Example 3 of the present invention. It is a conceptual structure explanatory drawing of the thermoelectric conversion element of Example 4 of this invention.
- a thermal spin wave spin current generating member made of a magnetic dielectric is made of an element having a large spin orbit interaction such as Pt, Au, Pd, Ag, Bi, or an element having an f orbit.
- thermoelectromotive force V is generated at both ends of the metal electrode by the current.
- the spin wave spin current precesses around the equilibrium position, and its phase change propagates through the spin system as a wave.
- a wave spin current is a phase change caused by heat.
- the magnetic dielectric layer may be a ferrimagnetic dielectric, a ferromagnetic dielectric, or an antiferromagnetic dielectric.
- the magnetic dielectric material may be anything as long as it contains Fe or Co.
- YIG yttrium iron garnet
- yttrium gallium iron garnet which is easily available and has low dissipation of spin angular momentum, When expressed in a general formula, Y 3 Fe 5-x Ga x O 12 (where x ⁇ 5) is used.
- FIG. 2 is a crystal structure diagram of YIG (Y 3 Fe 5 O 12 ).
- the crystal structure is cubic and the magnetic structure is ferrimagnetic.
- the magnetic ions in YIG are only Fe 3+ , and there are 24 Fe ⁇ (upspin) and 16 Fe ⁇ (downspin) per unit lattice. Therefore, YIG has a magnetic moment corresponding to eight unit lattice values Fe. Other Fe ions are antiferromagnetically coupled.
- nickel oxide and FeO are typically mentioned, but most of the magnetic dielectric is an antiferromagnetic dielectric.
- the magnetic dielectric layer is made of a ferromagnetic dielectric, it is desirable to provide an antiferromagnetic layer in order to fix the magnetization direction of the magnetic dielectric layer.
- any of sputtering, MOD (Metal-organic decomposition method: organometallic coating pyrolysis method), or sol-gel method may be used.
- the crystallinity of the magnetic dielectric layer may be single crystal or polycrystal.
- FIG. 3 is an explanatory diagram of a manufacturing process of a sample used in the embodiment of the present invention.
- a sample in which Y 3 Fe 4 GaO 12 is formed as a magnetic dielectric by the MOD method will be described.
- a MOD solution 12 having a Y 3 Fe 4 GaO 12 composition is spin-coated on a GGG (Gd 3 Ga 5 O 12 ) single crystal substrate 11 having a ⁇ 100 ⁇ plane as a main surface. Apply by the method.
- spin coating conditions first, after rotating at 500 rpm for 5 seconds, rotating at 3000 to 4000 rpm for 30 seconds, the MOD solution 12 is uniformly applied so that the film thickness after baking becomes 100 nm.
- the MOD solution 12 a MOD solution manufactured by Kojundo Chemical Laboratory Co., Ltd. was used.
- the oxide layer 13 is formed by temporary baking in an electric furnace, for example, by heating at 550 ° C. for 5 minutes.
- crystallization of the oxide layer 13 proceeds in the main firing in which heating is performed at 750 ° C. for 1 to 2 hours in an electric furnace to form the YIG layer 14.
- the composition of the YIG layer 14 is Y 3 Fe 4 GaO 12, which is a polycrystalline film.
- the thickness is, for example, 10 nm on the YIG layer 14 by using a mask sputtering method.
- the Pt electrodes 15 having a width of 0.1 mm are provided at a plurality of locations at predetermined intervals. In this case, eight Pt electrodes 15 are provided at intervals of 0.6 mm.
- FIG. 4 is an explanatory diagram of the temperature gradient dependence of the electromotive force
- FIG. 4 (a) is a conceptual configuration diagram of the sample system
- FIG. 4 (b) is an explanatory diagram of the temperature gradient dependency of the electromotive force
- FIG. 4C is an explanatory diagram of the magnetic field direction dependence of the polarity of the electromotive force at each temperature gradient.
- thermoelectromotive force V is obtained almost in proportion to the temperature gradient ⁇ T, that is, the temperature difference ⁇ T between both ends.
- a potential difference of about 2.5 ⁇ V was detected. From this result, it is presumed that a thermal spin wave spin current is generated in the YIG film 14 which is a magnetic dielectric material due to the temperature gradient TT.
- This thermal spin wave spin current is spin-exchanged at the interface of the YIG film 14 / Pt electrode 15, and the generated pure spin current generates a current in the Pt electrode 15 and is output as a thermoelectromotive force V from both ends of the Pt electrode 15. .
- the direction of the potential difference V generated at this time is reversed depending on the direction of the applied fixed magnetic field H. Therefore, by measuring the potential difference V in the fixed magnetic field H in which the potential difference V in the fixed magnetic field H is reversed, The existence of the spin wave spin current can be verified. Note that if the direction of the potential difference V is not reversed even when the magnetic field is reversed, this is not a thermal spin wave spin current but noise. Therefore, in order to prove that the result obtained in FIG. 4B is not a noise but a thermal spin wave spin current, the dependence of the polarity of the electromotive force on the magnetic field direction was verified.
- FIG. 4C is an explanatory diagram of the magnetic field direction dependence of the polarity of the electromotive force when the temperature difference ⁇ T is changed from 0 to 30 K.
- the polarity of the electromotive force V is also reversed. is doing. From this result, it was verified that the electromotive force V obtained was not a noise but a thermoelectromotive force by a thermal spin wave spin current.
- the applied magnetic field H is an output when changing from ⁇ 150 [Oe] to +150 [Oe] at each temperature difference and an output when changing from +150 [Oe] to ⁇ 150 [Oe].
- the direction of change is indicated by an arrow.
- the temperature difference ⁇ TK at both ends of the YIG film 14 can be known from the potential difference V of the Pt electrode 15 when the temperature gradient ⁇ ⁇ T dependence is viewed from the opposite viewpoint.
- the temperature difference at the one end side of ⁇ TK with respect to the other end at which the temperature is constant T 0 K in the heat bath is (T 0 + ⁇ T) K, which is used for measuring the temperature of a predetermined part. It can be used as a thermoelectric conversion element, that is, a thermocouple.
- FIG. 5 is an explanatory diagram of the position dependency of the electromotive force
- FIG. 5A is a conceptual configuration diagram of the sample system and an explanatory diagram of the magnetic field direction dependency of the polarity of the electromotive force at each position.
- the temperature difference applied to both ends of the sample was fixed at 20K.
- the applied magnetic field H is an output when changing from ⁇ 150 [Oe] to +150 [Oe] at each temperature difference and an output when changing from +150 [Oe] to ⁇ 150 [Oe].
- FIG. 5B is an explanatory diagram of the position dependency of the electromotive force.
- the electromotive force V generated when the external magnetic field is 100 [Oe] and the temperature difference applied to both ends of the sample is fixed at 20 K, and the Pt electrode 15 is applied. It is plotted as a function of the joining position.
- the reverse spin Hall electromotive force generated in the Pt electrode 15 depends on whether the Pt electrode 15 is bonded to the high temperature side of the YIG film 14 under a temperature gradient or to the low temperature side. , You can see that the sign is different. This result also shows that the magnitude of the electromotive force can be modulated by changing the position where the Pt electrode 15 is joined.
- FIG. 6 is a schematic perspective view of the thermoelectric conversion element according to the first embodiment of the present invention.
- a layer 22 is formed, and a Pt electrode having a thickness of, for example, 10 nm and a width of 0.6 mm is deposited thereon by mask sputtering to form a Pt electrode 23. This completes the thermoelectric conversion element.
- FIG. 7 is an explanatory diagram of the usage state of the thermoelectric conversion element according to the first embodiment of the present invention.
- an external magnetic field H is applied in a direction orthogonal to the longitudinal direction of the Pt electrode 23 and the YIG layer
- a temperature gradient ⁇ T along the external magnetic field H is formed in the YIG layer 22 by bringing the end of 22 on the side where the Pt electrode 23 is not provided into contact with the heat source 24 or by inserting it into the heat source 24.
- Due to this temperature gradient ⁇ T an electromotive force V is generated at both ends of the Pt electrode 23.
- the thermal conductivity ⁇ of the YIG layer 22 is 7 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 , and is, for example, an order of magnitude smaller than 90 W ⁇ m ⁇ 1 ⁇ K ⁇ 1 of NiFe.
- the figure of merit Z as an element can be dramatically increased. Further, if a magnetic dielectric having a lower thermal conductivity than YIG is used, the figure of merit Z S can be further increased.
- this thermoelectric conversion element is used as a thermocouple, it is desirable to perform measurement by bringing the low temperature side provided with the Pt electrode 23 into contact with a constant temperature medium in order to increase measurement accuracy.
- FIG. 8 is a schematic perspective view of the thermoelectric conversion element according to the second embodiment of the present invention.
- YIG having a Y 3 Fe 4 GaO 12 composition of, for example, 100 nm in thickness is formed on the GGG single crystal substrate 21 by sputtering.
- a layer 22 is formed, and a Pt film having a thickness of, for example, 10 nm and a width of 0.1 mm is deposited on the layer 22 by a mask sputtering method at intervals of 0.6 mm.
- the thermoelectric conversion element of Example 2 of the present invention is completed. Since the figure is a conceptual configuration diagram, it does not reflect the actual relationship such as the relationship between the width and the interval of the Pt electrode 23.
- FIG. 9 is an explanatory diagram of the usage state of the thermoelectric conversion element according to the second embodiment of the present invention.
- an external magnetic field H is applied in a direction orthogonal to the longitudinal direction of the Pt electrode 23 and the YIG layer
- One end of 22 is brought into contact with the heat source 24 or inserted into the heat source 24 to form a temperature gradient ⁇ T along the external magnetic field H in the YIG layer 22. Due to this temperature gradient ⁇ T, an electromotive force V proportional to the temperature gradient TT is generated at both ends of the Pt electrode 23.
- the position of the Pt electrode 23 can be arbitrarily set. By selecting, it can be used as a variable voltage battery.
- FIG. 10 is a schematic perspective view of the thermoelectric conversion element according to the third embodiment of the present invention, in which an InMn antiferromagnetic layer 32 having a thickness of, for example, 50 nm is deposited on a GGG single crystal substrate 31 using a sputtering method. .
- a YIG layer 33 having a Y 3 Fe 4 GaO 12 composition with a thickness of, for example, 100 nm is formed.
- a Pt film having a thickness of, for example, 10 nm and a width of 0.1 mm is deposited thereon by mask sputtering to form a Pt electrode 34, whereby the thermoelectric conversion element of Example 3 of the present invention is obtained.
- a magnetic field is applied in a direction perpendicular to the longitudinal direction of the Pt electrode 34 provided later.
- the electromotive force generated in the third embodiment of the present invention is proportional to the length of the Pt electrode 15
- the length of the YIG layer 33 in the direction perpendicular to the direction of the thermal spin wave spin flow is made longer to increase the high electromotive force. Electric power can be generated. That is, the figure of merit Z S can be modulated by adjusting the size of the sample, and in principle, a thermoelectric element having an infinite figure of merit can be constructed.
- thermoelectric conversion element according to Example 4 of the present invention will be described with reference to FIG.
- FIG. 11A is a conceptual cross-sectional view along the layer thickness direction of the thermoelectric conversion element of Example 4 of the present invention
- FIG. The thermoelectric conversion element according to the fourth embodiment of the present invention is obtained by winding a plurality of thermoelectric conversion elements having the same structure as in the first embodiment so that output voltages are connected in series.
- each individual thermoelectric conversion element is prepared by using, for example, the MOD method, and a GGG having a ⁇ 100 ⁇ plane as a main surface in the same process as the above embodiment.
- a MOD solution having a Y 3 Fe 4 GaO 12 composition is applied onto the single crystal substrate 11 by a spin coating method, and a YIG film 14 having a Y 3 Fe 4 GaO 12 composition is formed by sequentially performing preliminary baking and main baking.
- thermoelectric conversion is performed by providing a Pt electrode 15 having a thickness of, for example, 10 nm and a width of 0.1 mm on the YIG layer 14 using a mask sputtering method.
- Element 41 is formed.
- variety may become large sequentially so that winding may become easy.
- thermoelectric conversion elements 41 are metallized and bonded at predetermined minute intervals on the heat-resistant flexible substrate 42 such as a heat-resistant glass fiber cloth so that the width is sequentially increased, and then adjacent Pt electrodes 15 are wire-bonded with Au wires 43. To do.
- the output terminal 44 is connected to the Pt electrode of the innermost thermoelectric conversion element and the Pt electrode of the outermost thermoelectric conversion element.
- thermoelectric conversion element of Example 4 of the present invention is completed by winding the thermoelectric conversion element 41 having a narrow width so as to be inside.
- it is wound in a rectangular shape, but it may be triangular, pentagonal, or hexagonal.
- thermoelectric conversion elements 41 are connected in series by wire bonding, the length in the direction orthogonal to the thermal spin wave spin current direction is effectively lengthened and the winding is performed. Therefore, it is possible to output a large amount of power with a compact configuration.
- Pt is used as the inverse spin Hall effect member, but is not limited to Pt, and Pd, Au, Ag, Bi Other elements having f orbitals may be used.
- YIG or the like is used as the magnetic dielectric, but it is not limited to YIG or the like, and a ferromagnetic dielectric or an antiferromagnetic dielectric such as FeO is used. Also good.
- Example 3 an antiferromagnetic layer such as InMn is provided to bias the YIG layer in the magnetization direction, but this is not essential and bias may be applied by an external magnetic field.
- the bias is given by the external magnetic field, but as in Example 3, an antiferromagnetic layer such as InMn or PdPtMn may be provided and biased.
- Example 4 a heat-resistant substrate is used as the flexible substrate.
- a resin such as a PET film may be used.
- the thermoelectric conversion element may be fixed to the resin substrate using an adhesive.
- thermoelectric power generation element is typical, but it is not limited to a thermoelectric power generation element, and is also used as a thermocouple for temperature measurement.
Abstract
Description
Z=S2 ×(σ/κ) ・・・(1)
と表される。また、起電力Vの発生方向は温度勾配▽Tと平行方向になる。
Z=Ss 2 ×(σs /κ ) ・・・(2)
と表される。
なお、反強磁性誘電体は、典型的には酸化ニッケルやFeOが挙げられるが、磁性誘電体の大半は反強磁性誘電体である。
また、磁性誘電体層の厚さとしては、強磁性体或いはフェリ磁性体としての特性を発現するための厚さであれば良く、そのためには、5nm以上の厚さにすれば良い。
なお、逆スピンホール効果部材の膜厚は任意であるが、厚くしすぎるとバックフロー電流により効率が悪くなるので、20nm以下にすることが望ましい。一方、あまり薄すぎると高抵抗になり、逆スピンホール効果部材におけるジュール熱の発生量が増大するので、5nm以上の厚さにすることが望ましい。
次いで、図3(c)に示すように、電気炉中において、例えば、550℃で5分間加熱する仮焼成によって酸化物層13とする。
例えば、上記の各実施例においては、逆スピンホール効果部材としてPtを用いているが、Ptに限られるものではなく、Ptと同様にスピン軌道相互作用の大きなPdや、Au、Ag、Biや、その他のf軌道を有する元素を用いても良い。
Claims (8)
- 磁性誘電体からなる熱スピン波スピン流発生部材の少なくとも一端側に逆スピンホール効果部材を設け、前記熱スピン波スピン流発生部材に温度勾配を設けるとともに磁場印加手段により磁場を印加して前記逆スピンホール効果部材において熱スピン波スピン流を電圧に変換して取り出す熱電変換素子。
- 前記磁性誘電体が、フェリ磁性誘電体、強磁性誘電体或いは反強磁性誘電体のいずれかからなる請求項1記載の熱電変換素子。
- 前記磁性誘電体がフェリ磁性誘電体或いは強磁性誘電体からなるとともに、前記磁場印加手段が前記磁性誘電体に接してその磁化方向を固定する反強磁性層である請求項1または2に記載の熱電変換素子。
- 前記磁性誘電体が、Y3 Fe5-x Gax O12(但し、x<5)からなる請求項1乃至3のいずれか1項に記載の熱電変換素子。
- 前記逆スピンホール効果部材が、Pt、Au、Pd、Ag、Bi、或いは、f軌道を有する元素のいずれかからなる請求項1乃至4のいずれか1項に記載の熱電変換素子。
- 前記磁性誘電体の膜厚が5nm以上であるとともに、前記逆スピンホール効果部材の膜厚が5nm~20nmである請求項5に記載の熱電変換素子。
- 前記逆スピンホール効果部材を、前記熱スピン波スピン流発生部材の長手方向に沿った異なった位置に複数箇所設けた請求項1乃至6のいずれか1項に記載の熱電変換素子。
- 磁性誘電体からなる熱スピン波スピン流発生部材の少なくとも一端側に逆スピンホール効果部材を設け、前記熱スピン波スピン流発生部材に温度勾配を設けるとともに磁場印加手段により磁場を印加して前記逆スピンホール効果部材において熱スピン波スピン流を電圧に変換して取り出す複数の熱電変換要素を、前記逆スピンホール効果部材の延在方向の長さの順にフレキシブル基板上に固着するとともに、互いに隣接する前記逆スピンホール効果部材を順次直列接続し、前記フレキシブル基板を巻回した熱電変換素子。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/997,461 US8604571B2 (en) | 2008-06-12 | 2009-06-05 | Thermoelectric conversion device |
JP2010516830A JP5424273B2 (ja) | 2008-06-12 | 2009-06-05 | 熱電変換素子 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008-153781 | 2008-06-12 | ||
JP2008153781 | 2008-06-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009151000A1 true WO2009151000A1 (ja) | 2009-12-17 |
Family
ID=41416707
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/060317 WO2009151000A1 (ja) | 2008-06-12 | 2009-06-05 | 熱電変換素子 |
Country Status (3)
Country | Link |
---|---|
US (1) | US8604571B2 (ja) |
JP (1) | JP5424273B2 (ja) |
WO (1) | WO2009151000A1 (ja) |
Cited By (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011118374A1 (ja) * | 2010-03-25 | 2011-09-29 | 日本電気株式会社 | 熱型センサ及びプラットフォーム |
JP2011249746A (ja) * | 2010-04-30 | 2011-12-08 | Keio Gijuku | 熱電変換素子及び熱電変換装置 |
JP2012109367A (ja) * | 2010-11-17 | 2012-06-07 | Nec Corp | 熱電変換素子 |
WO2012108276A1 (ja) * | 2011-02-09 | 2012-08-16 | 日本電気株式会社 | 熱電変換素子、熱電変換素子の製造方法および熱電変換方法 |
WO2012161336A1 (ja) * | 2011-05-23 | 2012-11-29 | 日本電気株式会社 | 熱電変換素子および熱電変換方法 |
WO2012169377A1 (ja) * | 2011-06-09 | 2012-12-13 | 日本電気株式会社 | 熱電変換装置 |
WO2012169509A1 (ja) * | 2011-06-07 | 2012-12-13 | 日本電気株式会社 | 熱電変換素子 |
WO2013011971A1 (ja) * | 2011-07-15 | 2013-01-24 | 日本電気株式会社 | 磁性体素子用の積層体及びこの積層体を備えた熱電変換素子並びにその製造方法 |
JP2013041325A (ja) * | 2011-08-11 | 2013-02-28 | Nec Corp | 位置入力装置 |
WO2013035148A1 (ja) * | 2011-09-05 | 2013-03-14 | 株式会社日立製作所 | 熱電変換素子及びそれを用いた熱電変換モジュール |
WO2013047253A1 (ja) * | 2011-09-27 | 2013-04-04 | 日本電気株式会社 | 熱電変換素子及びその製造方法 |
WO2013046948A1 (ja) * | 2011-09-26 | 2013-04-04 | 日本電気株式会社 | 熱電変換素子 |
WO2013047254A1 (ja) * | 2011-09-27 | 2013-04-04 | 日本電気株式会社 | 熱電変換機能付き部材及びその製造方法 |
US20130104948A1 (en) * | 2011-10-28 | 2013-05-02 | Tohoku Techno Arch Co., Ltd. | Thermoelectric conversion element and thermoelectric conversion device |
WO2013161615A1 (ja) * | 2012-04-24 | 2013-10-31 | 日本電気株式会社 | 熱電変換素子 |
WO2014010286A1 (ja) * | 2012-07-09 | 2014-01-16 | 日本電気株式会社 | 熱電変換素子及びその製造方法 |
WO2014013766A1 (ja) * | 2012-07-19 | 2014-01-23 | 日本電気株式会社 | 熱電変換素子及びその製造方法 |
US20140048115A1 (en) * | 2011-05-09 | 2014-02-20 | Nec Corporation | Position detection device |
JP2015527037A (ja) * | 2012-07-30 | 2015-09-10 | コーエン・ヨアフCOHEN, Yoav | 熱エネルギーから有用なエネルギーを生成する方法 |
JP2015222789A (ja) * | 2014-05-23 | 2015-12-10 | 株式会社デンソー | 熱電変換素子 |
KR20160054993A (ko) * | 2014-11-07 | 2016-05-17 | 현대자동차주식회사 | 차량용 열전 발전 구조 |
JP2017092163A (ja) * | 2015-11-06 | 2017-05-25 | アシザワ・ファインテック株式会社 | 熱電変換素子 |
US10141492B2 (en) | 2015-05-14 | 2018-11-27 | Nimbus Materials Inc. | Energy harvesting for wearable technology through a thin flexible thermoelectric device |
US10290794B2 (en) | 2016-12-05 | 2019-05-14 | Sridhar Kasichainula | Pin coupling based thermoelectric device |
US10367131B2 (en) | 2013-12-06 | 2019-07-30 | Sridhar Kasichainula | Extended area of sputter deposited n-type and p-type thermoelectric legs in a flexible thin-film based thermoelectric device |
US10553773B2 (en) | 2013-12-06 | 2020-02-04 | Sridhar Kasichainula | Flexible encapsulation of a flexible thin-film based thermoelectric device with sputter deposited layer of N-type and P-type thermoelectric legs |
US10566515B2 (en) | 2013-12-06 | 2020-02-18 | Sridhar Kasichainula | Extended area of sputter deposited N-type and P-type thermoelectric legs in a flexible thin-film based thermoelectric device |
US11024789B2 (en) | 2013-12-06 | 2021-06-01 | Sridhar Kasichainula | Flexible encapsulation of a flexible thin-film based thermoelectric device with sputter deposited layer of N-type and P-type thermoelectric legs |
US11276810B2 (en) | 2015-05-14 | 2022-03-15 | Nimbus Materials Inc. | Method of producing a flexible thermoelectric device to harvest energy for wearable applications |
US11283000B2 (en) | 2015-05-14 | 2022-03-22 | Nimbus Materials Inc. | Method of producing a flexible thermoelectric device to harvest energy for wearable applications |
US11417818B2 (en) | 2017-12-20 | 2022-08-16 | Nec Corporation | Thermoelectric conversion element |
WO2023008383A1 (ja) * | 2021-07-28 | 2023-02-02 | 信越化学工業株式会社 | スピン波励起検出構造体 |
WO2023008382A1 (ja) * | 2021-07-28 | 2023-02-02 | 信越化学工業株式会社 | スピン波励起検出構造体の製造方法 |
US11917917B2 (en) | 2018-12-20 | 2024-02-27 | Nec Corporation | Thermoelectric conversion element |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10840427B2 (en) * | 2012-04-04 | 2020-11-17 | Nec Corporation | Thermoelectric conversion element, thermoelectric conversion system and manufacturing method of thermoelectric conversion element |
US10018689B2 (en) * | 2012-10-19 | 2018-07-10 | Cambridge Enterprise Limited | Electronic devices |
KR101984734B1 (ko) * | 2012-11-16 | 2019-06-03 | 삼성디스플레이 주식회사 | 신축성 베이스 플레이트와 그것을 사용한 신축성 유기 발광 표시 장치 및 그 제조방법 |
KR102078850B1 (ko) | 2013-03-15 | 2020-02-18 | 삼성전자 주식회사 | 자기 메모리 소자 및 이에 대한 정보 쓰기 방법 |
WO2015050982A1 (en) * | 2013-10-01 | 2015-04-09 | E1023 Corporation | Magnetically enhanced energy storage system and methods |
US9128142B1 (en) | 2014-04-28 | 2015-09-08 | The Johns Hopkins University | Ferromagnets as pure spin current generators and detectors |
JP7243573B2 (ja) * | 2019-10-31 | 2023-03-22 | Tdk株式会社 | 熱電変換素子及びその製造方法 |
KR102290180B1 (ko) * | 2019-11-13 | 2021-08-17 | 울산과학기술원 | 투명 스핀열전소자 및 그 제조방법 |
CN111883641B (zh) * | 2020-07-22 | 2022-01-28 | 北京大学 | 一种室温热激发自旋极化电流源及其实现方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009066631A1 (ja) * | 2007-11-22 | 2009-05-28 | Keio University | スピン流熱変換素子及び熱電変換素子 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09107129A (ja) * | 1995-10-09 | 1997-04-22 | Sharp Corp | 半導体素子及びその製造方法 |
US20030189234A1 (en) * | 2002-04-09 | 2003-10-09 | Johnson Mark B. | Hall effect device |
US6646315B1 (en) * | 2002-04-22 | 2003-11-11 | The United States Of America As Represented By The Secretary Of The Navy | Conductive film layer for hall effect device |
US6683359B2 (en) * | 2002-06-21 | 2004-01-27 | The United States Of America As Represented By The Secretary Of The Navy | Hall effect device with multiple layers |
US7265845B2 (en) * | 2003-01-27 | 2007-09-04 | Lake Shore Cryotronics, Inc. | Surface corrugation enhanced magneto-optical indicator film |
JP3701302B2 (ja) * | 2003-01-30 | 2005-09-28 | 松下電器産業株式会社 | 熱スイッチ素子およびその製造方法 |
JP4221496B2 (ja) * | 2003-03-26 | 2009-02-12 | 独立行政法人産業技術総合研究所 | n型熱電特性を有する複合酸化物 |
WO2005083808A1 (ja) * | 2004-03-01 | 2005-09-09 | Matsushita Electric Industrial Co., Ltd. | 熱電変換デバイス、およびこれを用いた冷却方法および発電方法 |
JP2007165463A (ja) | 2005-12-12 | 2007-06-28 | Osamu Yamashita | 熱電変換素子並びに発電用モジュール |
US7807917B2 (en) * | 2006-07-26 | 2010-10-05 | Translucent, Inc. | Thermoelectric and pyroelectric energy conversion devices |
-
2009
- 2009-06-05 JP JP2010516830A patent/JP5424273B2/ja active Active
- 2009-06-05 US US12/997,461 patent/US8604571B2/en active Active
- 2009-06-05 WO PCT/JP2009/060317 patent/WO2009151000A1/ja active Application Filing
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009066631A1 (ja) * | 2007-11-22 | 2009-05-28 | Keio University | スピン流熱変換素子及び熱電変換素子 |
Non-Patent Citations (3)
Title |
---|
E.SAITOH ET AL.: "Conversion of spin current into charge current at room temperature: Inverse spin-Hall effect", APPLIED PHYSICS LETTERS, vol. 88, 5 May 2006 (2006-05-05), pages 182509 * |
K.UCHIDA ET AL.: "Observation of the spin Seebeck effect", NATURE, vol. 455, 9 October 2008 (2008-10-09), pages 778 - 781 * |
KEN'IHI UCHIDA ET AL.: "Spin-ryu Seisei · Kenshutsu Gijutsu no Saizensen -Spin-Hall Koka no Oyo to Spin-Seebeck Koka no Kansoku", SOLID STATE PHYSICS, vol. 519, no. 5, 15 May 2009 (2009-05-15), pages 281 - 291 * |
Cited By (61)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9228968B2 (en) | 2010-03-25 | 2016-01-05 | Nec Corporation | Thermal sensor and platform |
JP5783167B2 (ja) * | 2010-03-25 | 2015-09-24 | 日本電気株式会社 | 熱型センサ及びプラットフォーム |
EP2551913A4 (en) * | 2010-03-25 | 2015-09-30 | Nec Corp | HEAT TYPE DETECTOR AND PLATFORM |
WO2011118374A1 (ja) * | 2010-03-25 | 2011-09-29 | 日本電気株式会社 | 熱型センサ及びプラットフォーム |
JP2011249746A (ja) * | 2010-04-30 | 2011-12-08 | Keio Gijuku | 熱電変換素子及び熱電変換装置 |
JP2012109367A (ja) * | 2010-11-17 | 2012-06-07 | Nec Corp | 熱電変換素子 |
EP2674982A4 (en) * | 2011-02-09 | 2017-11-08 | Nec Corporation | Thermoelectric conversion element, method for producing thermoelectric conversion element, and thermoelectric conversion method |
JP5991589B2 (ja) * | 2011-02-09 | 2016-09-14 | 日本電気株式会社 | 熱電変換素子、熱電変換素子の製造方法および熱電変換方法 |
US20130312802A1 (en) * | 2011-02-09 | 2013-11-28 | Tohoku University | Thermoelectric converter element, method of manufacturing thermoelectric converter element, and thermoelectric conversion method |
KR101531122B1 (ko) * | 2011-02-09 | 2015-06-23 | 닛본 덴끼 가부시끼가이샤 | 열전 변환 소자, 열전 변환 소자의 제조 방법 및 열전 변환 방법 |
US9991436B2 (en) | 2011-02-09 | 2018-06-05 | Nec Corporation | Thermoelectric converter element, method of manufacturing thermoelectric converter element, and thermoelectric conversion method |
WO2012108276A1 (ja) * | 2011-02-09 | 2012-08-16 | 日本電気株式会社 | 熱電変換素子、熱電変換素子の製造方法および熱電変換方法 |
CN103370793A (zh) * | 2011-02-09 | 2013-10-23 | 日本电气株式会社 | 热电转换元件、热电转换元件的制造方法及热电转换方法 |
US9343647B2 (en) * | 2011-05-09 | 2016-05-17 | Nec Corporation | Position detection device |
US20140048115A1 (en) * | 2011-05-09 | 2014-02-20 | Nec Corporation | Position detection device |
WO2012161336A1 (ja) * | 2011-05-23 | 2012-11-29 | 日本電気株式会社 | 熱電変換素子および熱電変換方法 |
JP5987242B2 (ja) * | 2011-05-23 | 2016-09-07 | 日本電気株式会社 | 熱電変換素子および熱電変換方法 |
US20140182645A1 (en) * | 2011-05-23 | 2014-07-03 | Tohoku University | Thermoelectric conversion element and thermoelectric conversion method |
US9224936B2 (en) | 2011-06-07 | 2015-12-29 | Nec Corporation | Thermoelectric conversion device |
WO2012169509A1 (ja) * | 2011-06-07 | 2012-12-13 | 日本電気株式会社 | 熱電変換素子 |
WO2012169377A1 (ja) * | 2011-06-09 | 2012-12-13 | 日本電気株式会社 | 熱電変換装置 |
JPWO2012169377A1 (ja) * | 2011-06-09 | 2015-02-23 | 日本電気株式会社 | 熱電変換装置 |
US9917241B2 (en) | 2011-06-09 | 2018-03-13 | Nec Corporation | Thermoelectric conversion apparatus |
US9496474B2 (en) | 2011-06-09 | 2016-11-15 | Nec Corporation | Thermoelectric conversion apparatus |
WO2013011971A1 (ja) * | 2011-07-15 | 2013-01-24 | 日本電気株式会社 | 磁性体素子用の積層体及びこの積層体を備えた熱電変換素子並びにその製造方法 |
JP2013041325A (ja) * | 2011-08-11 | 2013-02-28 | Nec Corp | 位置入力装置 |
JPWO2013035148A1 (ja) * | 2011-09-05 | 2015-03-23 | 株式会社日立製作所 | 熱電変換素子及びそれを用いた熱電変換モジュール |
WO2013035148A1 (ja) * | 2011-09-05 | 2013-03-14 | 株式会社日立製作所 | 熱電変換素子及びそれを用いた熱電変換モジュール |
WO2013046948A1 (ja) * | 2011-09-26 | 2013-04-04 | 日本電気株式会社 | 熱電変換素子 |
JPWO2013046948A1 (ja) * | 2011-09-26 | 2015-03-26 | 日本電気株式会社 | 熱電変換素子 |
US9059336B2 (en) | 2011-09-26 | 2015-06-16 | Nec Corporation | Thermoelectric conversion element |
WO2013047254A1 (ja) * | 2011-09-27 | 2013-04-04 | 日本電気株式会社 | 熱電変換機能付き部材及びその製造方法 |
JPWO2013047254A1 (ja) * | 2011-09-27 | 2015-03-26 | 日本電気株式会社 | 熱電変換機能付き部材及びその製造方法 |
WO2013047253A1 (ja) * | 2011-09-27 | 2013-04-04 | 日本電気株式会社 | 熱電変換素子及びその製造方法 |
US9647193B2 (en) | 2011-10-28 | 2017-05-09 | Tohoku Technoarch Co., Ltd. | Thermoelectric conversion element and thermoelectric conversion device |
US20130104948A1 (en) * | 2011-10-28 | 2013-05-02 | Tohoku Techno Arch Co., Ltd. | Thermoelectric conversion element and thermoelectric conversion device |
WO2013161615A1 (ja) * | 2012-04-24 | 2013-10-31 | 日本電気株式会社 | 熱電変換素子 |
WO2014010286A1 (ja) * | 2012-07-09 | 2014-01-16 | 日本電気株式会社 | 熱電変換素子及びその製造方法 |
JPWO2014013766A1 (ja) * | 2012-07-19 | 2016-06-30 | 日本電気株式会社 | 熱電変換素子及びその製造方法 |
WO2014013766A1 (ja) * | 2012-07-19 | 2014-01-23 | 日本電気株式会社 | 熱電変換素子及びその製造方法 |
US9859486B2 (en) | 2012-07-19 | 2018-01-02 | Nec Corporation | Thermoelectric conversion element and manufacturing method for same |
JP2015527037A (ja) * | 2012-07-30 | 2015-09-10 | コーエン・ヨアフCOHEN, Yoav | 熱エネルギーから有用なエネルギーを生成する方法 |
US10367131B2 (en) | 2013-12-06 | 2019-07-30 | Sridhar Kasichainula | Extended area of sputter deposited n-type and p-type thermoelectric legs in a flexible thin-film based thermoelectric device |
US11024789B2 (en) | 2013-12-06 | 2021-06-01 | Sridhar Kasichainula | Flexible encapsulation of a flexible thin-film based thermoelectric device with sputter deposited layer of N-type and P-type thermoelectric legs |
US10566515B2 (en) | 2013-12-06 | 2020-02-18 | Sridhar Kasichainula | Extended area of sputter deposited N-type and P-type thermoelectric legs in a flexible thin-film based thermoelectric device |
US10553773B2 (en) | 2013-12-06 | 2020-02-04 | Sridhar Kasichainula | Flexible encapsulation of a flexible thin-film based thermoelectric device with sputter deposited layer of N-type and P-type thermoelectric legs |
JP2015222789A (ja) * | 2014-05-23 | 2015-12-10 | 株式会社デンソー | 熱電変換素子 |
KR20160054993A (ko) * | 2014-11-07 | 2016-05-17 | 현대자동차주식회사 | 차량용 열전 발전 구조 |
CN106160578A (zh) * | 2014-11-07 | 2016-11-23 | 现代自动车株式会社 | 用于车辆的热电发电结构 |
KR101673693B1 (ko) * | 2014-11-07 | 2016-11-07 | 현대자동차주식회사 | 차량용 열전 발전 구조 |
US11283000B2 (en) | 2015-05-14 | 2022-03-22 | Nimbus Materials Inc. | Method of producing a flexible thermoelectric device to harvest energy for wearable applications |
US11276810B2 (en) | 2015-05-14 | 2022-03-15 | Nimbus Materials Inc. | Method of producing a flexible thermoelectric device to harvest energy for wearable applications |
US10141492B2 (en) | 2015-05-14 | 2018-11-27 | Nimbus Materials Inc. | Energy harvesting for wearable technology through a thin flexible thermoelectric device |
JP2017092163A (ja) * | 2015-11-06 | 2017-05-25 | アシザワ・ファインテック株式会社 | 熱電変換素子 |
US10516088B2 (en) | 2016-12-05 | 2019-12-24 | Sridhar Kasichainula | Pin coupling based thermoelectric device |
US10559738B2 (en) | 2016-12-05 | 2020-02-11 | Sridhar Kasichainula | Pin coupling based thermoelectric device |
US10290794B2 (en) | 2016-12-05 | 2019-05-14 | Sridhar Kasichainula | Pin coupling based thermoelectric device |
US11417818B2 (en) | 2017-12-20 | 2022-08-16 | Nec Corporation | Thermoelectric conversion element |
US11917917B2 (en) | 2018-12-20 | 2024-02-27 | Nec Corporation | Thermoelectric conversion element |
WO2023008383A1 (ja) * | 2021-07-28 | 2023-02-02 | 信越化学工業株式会社 | スピン波励起検出構造体 |
WO2023008382A1 (ja) * | 2021-07-28 | 2023-02-02 | 信越化学工業株式会社 | スピン波励起検出構造体の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP5424273B2 (ja) | 2014-02-26 |
JPWO2009151000A1 (ja) | 2011-11-17 |
US20110084349A1 (en) | 2011-04-14 |
US8604571B2 (en) | 2013-12-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5424273B2 (ja) | 熱電変換素子 | |
JP5585314B2 (ja) | 熱電変換素子及び熱電変換装置 | |
Uchida et al. | Thermoelectric generation based on spin Seebeck effects | |
JP5267967B2 (ja) | スピン流熱変換素子及び熱電変換素子 | |
JP5339272B2 (ja) | スピントロニクスデバイス及び情報伝達方法 | |
JP5991589B2 (ja) | 熱電変換素子、熱電変換素子の製造方法および熱電変換方法 | |
US9647193B2 (en) | Thermoelectric conversion element and thermoelectric conversion device | |
JP6143051B2 (ja) | スピントロニクスデバイス | |
Uchida et al. | Thermoelectrics: From longitudinal to transverse | |
US10326069B2 (en) | Thermoelectric conversion element and method for making the same | |
WO2013035148A1 (ja) | 熱電変換素子及びそれを用いた熱電変換モジュール | |
WO2014041838A1 (ja) | 熱電変換素子及びその製造方法 | |
Gautam et al. | Temperature dependent anomalous Hall effect and anomalous Nernst effect in perpendicularly magnetized [CoSiB/Pt] multilayer film | |
Rothe et al. | Power factor anisotropy of p-type and n-type conductive thermoelectric Bi-Sb-Te thin films | |
JP6349863B2 (ja) | スピン流熱電変換素子とその製造方法および熱電変換装置 | |
Wang et al. | Antiferromagnetic-metal/ferromagnetic-metal periodic multilayers for on-chip thermoelectric generation | |
WO2017082266A1 (ja) | 熱電変換素子用起電膜及び熱電変換素子 | |
Ren et al. | First observation of magnon transport in organic-inorganic hybrid perovskite | |
Tomita et al. | Large Nernst effect and thermodynamics properties in Weyl antiferromagnet | |
He et al. | Magnon-induced giant anomalous Nernst effect in single crystal MnBi | |
JP6519230B2 (ja) | 熱電変換素子とその製造方法 | |
Kirihara et al. | Spin-Seebeck thermoelectric converter | |
JP6336331B2 (ja) | 熱電変換素子 | |
JP2022024463A (ja) | 熱電変換材料 | |
DiVenere et al. | Localization and interaction effects in CdTe Bi superlattices |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09762430 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2010516830 Country of ref document: JP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12997461 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 09762430 Country of ref document: EP Kind code of ref document: A1 |