WO2009150919A1 - 半導体ウエハの保護膜の形成装置 - Google Patents
半導体ウエハの保護膜の形成装置 Download PDFInfo
- Publication number
- WO2009150919A1 WO2009150919A1 PCT/JP2009/059001 JP2009059001W WO2009150919A1 WO 2009150919 A1 WO2009150919 A1 WO 2009150919A1 JP 2009059001 W JP2009059001 W JP 2009059001W WO 2009150919 A1 WO2009150919 A1 WO 2009150919A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor wafer
- ultraviolet
- protective film
- surface plate
- attached
- Prior art date
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
Definitions
- the present invention relates to an apparatus for forming a protective film on a semiconductor wafer, and more particularly to an apparatus for forming a protective film on a semiconductor wafer that forms a protective film made of an ultraviolet curable resin on the surface of the semiconductor wafer.
- a rotating unit that rotates the substrate coated with the ultraviolet curable resin, and a rotating unit disposed above the substrate, A light beam for irradiating ultraviolet rays; and a substantially annular light reflector disposed on the outside of the substrate.
- the light reflector has a reflection surface that reflects the ultraviolet rays as a curved surface, and is reflected by the reflection surface.
- the outer peripheral surface of the substrate is irradiated with ultraviolet light (see, for example, Patent Document 1). JP 2000-276785 A
- an object of the present invention is to provide an apparatus for forming a protective film for a semiconductor wafer, which can form a protective film of an ultraviolet curable resin on the surface of the semiconductor wafer with a uniform thickness.
- the semiconductor wafer protective film forming apparatus of the present invention is a semiconductor wafer protective film forming apparatus for forming a protective film made of an ultraviolet curable resin on the surface of a semiconductor wafer, and allows ultraviolet light to pass through vertically.
- Ultraviolet irradiation means an elevating member disposed so as to be movable up and down above the surface plate, and a flat surface mounted on the upper surface of the surface plate so as to cover the opening and on which the semiconductor wafer can be placed
- An ultraviolet-transmissive pressure-receiving member having an upper surface, and a flat lower surface that is positioned on the lower side of the elevating member and is attached to the elevating member via an angle adjusting means and facing the pressure-receiving member.
- the ultraviolet curable resin is then applied. Since the ultraviolet curable resin can be cured by irradiating ultraviolet rays from below, the protective film of the ultraviolet curable resin can be formed on the surface of the semiconductor wafer with a uniform thickness.
- the protective film forming apparatus is mounted on a base 3 and a surface plate 2 having an opening 1 that penetrates vertically and allows ultraviolet light to pass therethrough, and is attached to the lower surface of the surface plate 2 to emit ultraviolet light.
- a light reflector 4 that reflects upward, an ultraviolet irradiation means 5 that is attached to the lower part of the light reflector 4 to irradiate ultraviolet light upward, and is opposed to and above and above the surface plate 2
- An elevating member 6 that can be disposed, and a UV-transmissive pressure-receiving member 7 that has a flat upper surface that is mounted on the upper surface of the surface plate 2 so as to cover the opening 1 and on which the semiconductor wafer W can be placed.
- a pressure member 9 located on the lower side of the elevating member 6 and mounted on the elevating member 6 via the angle adjusting means 8 and facing the pressure receiving member 7 and having a flat lower surface; and the elevating member And an electric cylinder 10 for moving up and down 6.
- the pressurizing member 9 is preferably made of a material having good surface roughness and low thermal strain.
- ceramics such as alumina ceramics, zirconia ceramics, silicon nitride ceramics, or silicon carbide ceramics can be used.
- the pressurizing member 9 is made of high-purity alumina ceramics having excellent electrical insulation, wear resistance and chemical stability, so that the Young's modulus is as high as 380 GPa and is not easily bent, and is also deformed by heat. Even if it is small and receives ultraviolet rays, distortion can be reduced.
- the pressure receiving member 7 can be made of glass having a high ultraviolet transmittance. Moreover, it is preferable to provide a cooling means (not shown) for cooling the pressure receiving member 7.
- a cooling means by providing a blower fan directed to the pressure receiving member 7 or a plurality of passages penetrating the pressure receiving member 7 in the horizontal direction and circulating the refrigerant in the passages, the distortion of the pressure receiving member 7 is achieved. Can be suppressed.
- the pressure receiving member 7 is fixed by a frame-shaped guide member 11 mounted on the upper surface of the surface plate 2. As shown in FIG. 2, the peripheral portion of the pressure receiving member 7 has a step shape whose height is lower than the upper surface of the pressure receiving member 7, and this low step portion is screwed to the guide member 11.
- the set screw 12 is pressed and fixed with a flat steel 13 and a resin flat plate 14 interposed therebetween. Due to the interposition of these flat steel 13 and resin flat plate 14, the pressing force applied to the pressure receiving member 7 by the set screw 12 can be dispersed to prevent the pressure receiving member 7 from being damaged.
- Reference numeral 12a denotes a bolt for fixing the guide member 11.
- the angle adjusting means 8 includes two vertical adjustment mechanisms 15 that are inserted in the left and right side portions of the elevating member 6 and are configured to allow screws to be adjusted in and out.
- the tilting plate 16 is pivotally supported between the lower ends of the vertical adjustment mechanism 15 and can be tilted.
- the tilting plate 16 has the pressing member 9 attached to the lower surface thereof.
- the displacement plate 17 is composed of two displacement meters 17 that detect displacements on both the left and right sides of the tilting plate 16.
- the elevating member 6 is slidably mounted on four columns 18 standing upright at the four corners of the surface plate 2, and the upper ends of the four columns 18.
- a ceiling frame 19 is installed between them.
- the electric cylinder 10 is attached to the central portion of the ceiling frame 19 so as to extend through the expansion and contraction operation of the piston rod of the electric cylinder 10.
- the elevating member 6 is moved up and down.
- a load cell 20 as a pressure measuring means for measuring the pressure applied to the semiconductor wafer W by the pressure member 9 is attached to the lower end of the piston rod of the electric cylinder 10.
- a controller 21 is electrically connected to the servo motor 10 a of the electric cylinder 10, the load cell 20, and the ultraviolet irradiation means 5.
- An encoder 10b as a position detector is attached to the servo motor 10a.
- the controller 21 operates the servo motor 10a to control the extension operation of the piston rod of the electric cylinder 10 based on the measurement value of the load cell 20 that measures the pressure applied to the semiconductor wafer W by the pressing member 9.
- the target value for example, 50 ⁇ m
- the target value can be set.
- the height of the left and right sides of the tilting plate 16 is adjusted by the vertical adjustment mechanism 15 while the height is detected by the two displacement meters 17 of the angle adjusting means 8 in advance, and the tilting plate 16 is adjusted.
- the parallelism between the pressure member 9 and the pressure receiving member 7 is made highly accurate.
- a polyester film S as an ultraviolet light permeable release sheet is interposed in the central portion of the upper surface of the pressure receiving member 7, and a required amount of ultraviolet curable resin (not shown) is applied to the central portion by, for example, a dispenser.
- a semiconductor wafer W is placed on this ultraviolet curable resin.
- the polyester film S as a peeling sheet can also be mounted on this semiconductor wafer W.
- the piston rod of the electric cylinder 10 is initially extended at a relatively high speed to bring the pressing member 9 closer to the semiconductor wafer W.
- the position of the piston rod of the electric cylinder 10 is detected, the piston rod is extended at a low speed, and the semiconductor wafer W is pressurized by the pressure member 9 while detecting the load of the load cell 20.
- the ultraviolet curable resin is spread thinly and stretched to a uniform thickness (target film thickness).
- the irradiated ultraviolet rays hit the ultraviolet curable resin while being converged toward the semiconductor wafer W by the light reflector 4, and the ultraviolet curable resin is cured.
- the polyester film S is peeled off, and the semiconductor wafer W on which a protective film made of an ultraviolet curable resin is formed is taken out.
- FIG. 2 is an enlarged detail view of a part A in FIG. 1.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
前記受圧部材7は、紫外線透過率の高いガラス製とすることができる。また、この受圧部材7を冷却する冷却手段(図示せず)を設けるのが好ましい。たとえば、冷却手段として、受圧部材7に向けられる送風ファンか、受圧部材7に水平方向に貫通する複数個の通路を設け、この通路に冷媒を循環させる構造とすることにより、受圧部材7の歪を抑えることができる。
また、前記電動シリンダ10のサーボモータ10aと、前記ロードセル20と、前記紫外線照射手段5とには、コントローラ21が電気的に接続してある。このサーボモータ10aには、位置検出器としてのエンコーダ10bが付属されている。
前記コントローラ21は、加圧部材9の半導体ウエハWへの加圧力を測定するロードセル20の測定値に基づき、前記サーボモータ10aを作動して電動シリンダ10のピストンロッドの伸長動作を制御する。これにより、半導体ウエハWを加圧部材9によって加圧して紫外線硬化樹脂を延伸する際、加圧部材9の加圧位置または下降速度、および加圧力を制御して、紫外線硬化樹脂の膜厚を目標値(たとえば50μm)に設定することができる。
ついで、電動シリンダ10のピストンロッドの位置を検出し、該ピストンロッドを低速度で伸長作動して、またロードセル20の荷重を検出しながら半導体ウエハWを加圧部材9によって加圧する。これにより、紫外線硬化樹脂を薄く広げて、均一な厚さ(目標値の膜厚)に延伸する。その後、紫外線照射手段5から紫外線を照射すると、照射された紫外線は光反射体4によって半導体ウエハWに向けて収束されながら紫外線硬化樹脂に当たり、紫外線硬化樹脂を硬化させる。
ついで、また、ポリエステルフィルムSを剥がして紫外線硬化樹脂からなる保護膜を形成した半導体ウエハWを取り出す。
また、本発明は本明細書の詳細な説明により更に完全に理解できるであろう。しかしながら、詳細な説明および特定の実施例は、本発明の望ましい実施の形態であり、説明の目的のためにのみ記載されているものである。この詳細な説明から、種々の変更、改変が、当業者にとって明らかだからである。
出願人は、記載された実施の形態のいずれをも公衆に献上する意図はなく、開示された改変、代替案のうち、特許請求の範囲内に文言上含まれないかもしれないものも、均等論下での発明の一部とする。
本明細書あるいは請求の範囲の記載において、名詞及び同様な指示語の使用は、特に指示されない限り、または文脈によって明瞭に否定されない限り、単数および複数の両方を含むものと解釈すべきである。本明細書中で提供されたいずれの例示または例示的な用語(例えば、「等」)の使用も、単に本発明を説明し易くするという意図であるに過ぎず、特に請求の範囲に記載しない限り本発明の範囲に制限を加えるものではない。
1 開口
2 定盤
3 機台
4 光反射体
5 紫外線照射手段
6 昇降部材
7 受圧部材
8 角度調整手段
9 加圧部材
10 電動シリンダ
10a サーボモータ
10b エンコーダ
20 ロードセル
21 コントローラ
Claims (4)
- 半導体ウエハの表面に紫外線硬化樹脂からなる保護膜を形成する半導体ウエハの保護膜の形成装置であって、
上下に貫通して紫外線が通過可能な開口を有する機台および定盤と、
前記定盤の下部に装着されて紫外線を上方へ向けて反射する光反射体と、
この光反射体の下部に装着されて紫外線を上方へ向けて照射する紫外線照射手段と、
前記定盤の上方位置に昇降可能に配設された昇降部材と、
前記定盤の上面に前記開口を被うようにして装着されるとともに前記半導体ウエハを載置可能な平坦状の上面を有する紫外線透過性の受圧部材と、
前記昇降部材の下方側に位置してこの昇降部材に角度調整手段を介しかつ前記受圧部材と対向して装着される平坦状の下面を有する加圧部材と、
前記昇降部材を昇降させる電動シリンダと、
を具備したことを特徴とする半導体ウエハの保護膜の形成装置。 - 前記加圧部材がセラミックスである請求項1記載の半導体ウエハの保護膜の形成装置。
- 前記加圧部材の前記半導体ウエハへの加圧力を測定する加圧力測定手段と、この加圧力測定手段の測定値に基づき前記電動シリンダのピストンロッドの伸長速度を制御するコントローラとが設けられてなる請求項1または2記載の半導体ウエハの保護膜の形成装置。
- 前記受圧部材を冷却する冷却手段が設けられてなる請求項1または2記載の半導体ウエハの保護膜の形成装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2009801024369A CN101919034B (zh) | 2008-06-10 | 2009-05-14 | 半导体晶片的保护膜的形成装置 |
KR1020107016349A KR101194074B1 (ko) | 2008-06-10 | 2009-05-14 | 반도체 웨이퍼의 보호막 형성장치 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008151153 | 2008-06-10 | ||
JP2008-151153 | 2008-06-10 | ||
JP2008-289363 | 2008-11-12 | ||
JP2008289363A JP4582467B2 (ja) | 2008-06-10 | 2008-11-12 | 半導体ウエハの保護膜の形成装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009150919A1 true WO2009150919A1 (ja) | 2009-12-17 |
Family
ID=41416630
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/059001 WO2009150919A1 (ja) | 2008-06-10 | 2009-05-14 | 半導体ウエハの保護膜の形成装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4582467B2 (ja) |
KR (1) | KR101194074B1 (ja) |
CN (1) | CN101919034B (ja) |
WO (1) | WO2009150919A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7488117B2 (ja) | 2020-06-04 | 2024-05-21 | 株式会社ディスコ | 保護部材の厚み調整方法 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59227131A (ja) * | 1983-06-08 | 1984-12-20 | Matsushita Electronics Corp | 樹脂封止形半導体装置の製造方法およびこれに用いる封止装置 |
JPH04239143A (ja) * | 1991-01-11 | 1992-08-27 | Oki Electric Ind Co Ltd | 樹脂封止型半導体装置の製造方法及びそのための金型 |
JPH06318609A (ja) * | 1993-05-07 | 1994-11-15 | Toshiba Corp | 樹脂封止型半導体装置およびその製造方法 |
JPH1079362A (ja) * | 1996-07-12 | 1998-03-24 | Fujitsu Ltd | 半導体装置の製造方法及び半導体装置製造用金型及び半導体装置及びその実装方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1420538A (zh) * | 1996-07-12 | 2003-05-28 | 富士通株式会社 | 半导体装置的制造方法和半导体装置及其装配方法 |
JP4239143B2 (ja) * | 2002-09-12 | 2009-03-18 | 東洋カプセル株式会社 | 非ウシ起源変性コラーゲンの製造方法 |
-
2008
- 2008-11-12 JP JP2008289363A patent/JP4582467B2/ja active Active
-
2009
- 2009-05-14 WO PCT/JP2009/059001 patent/WO2009150919A1/ja active Application Filing
- 2009-05-14 KR KR1020107016349A patent/KR101194074B1/ko active IP Right Grant
- 2009-05-14 CN CN2009801024369A patent/CN101919034B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS59227131A (ja) * | 1983-06-08 | 1984-12-20 | Matsushita Electronics Corp | 樹脂封止形半導体装置の製造方法およびこれに用いる封止装置 |
JPH04239143A (ja) * | 1991-01-11 | 1992-08-27 | Oki Electric Ind Co Ltd | 樹脂封止型半導体装置の製造方法及びそのための金型 |
JPH06318609A (ja) * | 1993-05-07 | 1994-11-15 | Toshiba Corp | 樹脂封止型半導体装置およびその製造方法 |
JPH1079362A (ja) * | 1996-07-12 | 1998-03-24 | Fujitsu Ltd | 半導体装置の製造方法及び半導体装置製造用金型及び半導体装置及びその実装方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101919034A (zh) | 2010-12-15 |
CN101919034B (zh) | 2012-05-02 |
JP4582467B2 (ja) | 2010-11-17 |
KR20110035994A (ko) | 2011-04-06 |
JP2010021509A (ja) | 2010-01-28 |
KR101194074B1 (ko) | 2012-10-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9470581B2 (en) | Apparatus and method of detecting temperature and apparatus for processing substrate | |
WO2010052902A1 (ja) | 貼合装置及び貼合方法 | |
US20210220945A1 (en) | Laser reflow apparatus | |
JP2007519232A (ja) | 工作物の熱誘起運動を抑制する機器及び装置 | |
CN106935532A (zh) | 具有顶部基板支撑组件的热处理腔室 | |
KR20110088409A (ko) | 기판 재치 장치의 평가 장치 및 그 평가 방법, 그리고 이에 이용되는 평가용 기판 | |
JP2017168565A (ja) | 保護部材形成装置 | |
JP2011185852A (ja) | 熱拡散率測定装置 | |
JP4614105B2 (ja) | ステージ機構 | |
WO2009150919A1 (ja) | 半導体ウエハの保護膜の形成装置 | |
JP2008288542A (ja) | 紫外線照射装置および紫外線照射方法 | |
KR101605079B1 (ko) | 급속 열처리 장치 | |
JP5469890B2 (ja) | 熱処理装置 | |
KR101964448B1 (ko) | 진직도 측정장치 | |
CN112504864A (zh) | 一种同步辐射光源的高温力学加载装置 | |
WO2023040758A1 (zh) | 离子束刻蚀机及其下电极结构 | |
JPH06177141A (ja) | 熱処理装置 | |
KR101617920B1 (ko) | 라미네이터장치 | |
JP2009085796A (ja) | 高温における電磁波の反射率または透過率測定装置 | |
TWI405634B (zh) | 具有雷射光束分析器的鐳射加工裝置 | |
KR101569381B1 (ko) | 2중 열 반사판을 구비한 글라스 열전사장치 | |
JP2003031634A (ja) | 基板載置装置及び基板処理装置 | |
JP5926142B2 (ja) | 工作物の熱誘起運動を抑制する機器及び装置 | |
KR20190118313A (ko) | 기판 처리방법 및 기판 처리장치 | |
US20180299099A1 (en) | Light source device for collimator |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980102436.9 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09762349 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 20107016349 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 09762349 Country of ref document: EP Kind code of ref document: A1 |