Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01C—RESISTORS
  • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
  • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01C—RESISTORS
  • H01C1/00—Details
  • H01C1/08—Cooling, heating or ventilating arrangements
  • H01C1/084—Cooling, heating or ventilating arrangements using self-cooling, e.g. fins, heat sinks
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01C—RESISTORS
  • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
  • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
  • H01C7/12—Overvoltage protection resistors; Arresters
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K1/00—Printed circuits
  • H05K1/02—Details
  • H05K1/0213—Electrical arrangements not otherwise provided for
  • H05K1/0254—High voltage adaptations; Electrical insulation details; Overvoltage or electrostatic discharge protection ; Arrangements for regulating voltages or for using plural voltages
  • H05K1/0257—Overvoltage protection
  • H05K1/0259—Electrostatic discharge [ESD] protection
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K1/00—Printed circuits
  • H05K1/02—Details
  • H05K1/03—Use of materials for the substrate
  • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
  • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
  • H05K2201/10007—Types of components
  • H05K2201/10022—Non-printed resistor
• • H—ELECTRICITY
  • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
  • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
  • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
  • H05K2203/04—Soldering or other types of metallurgic bonding
  • H05K2203/049—Wire bonding
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
  • H10W90/00—Package configurations
  • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
  • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
  • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

Definitions

• a varistor component with heat conductors is known.
• a light-emitting diode is arranged.
• An object to be solved is to specify heat-dissipating means for an electrical component in an array.
• the semiconductor component has electrical external contacts on its lower side lying on the heat sink, which are contacted with electrical conductor tracks on the heat sink. It is preferred that the external electrical contacts of the semiconductor device are designed as solder balls, in particular as Flipchiprome réelle. Such electrical external contacts facilitate the mounting of the semiconductor device on the heat sink considerably.
• the heat sink may comprise a plurality of layers arranged one above the other, between which, for example, conductor tracks run, which could also be connected to plated-through holes of the heat sink.
• the layers may be dielectric layer, in particular ceramic layers with good heat conductivity.
• the varistor body contains a composite material which is composed of at least one varistor ceramic and a good heat-conducting material, wherein the good heat-conducting material differs from the varistor ceramic, which is selected mainly for non-linear resistance function of the varistor body.
• Suitable formulations for a matrix are, for example, the compounds zinc oxide-bismuth-antimony or zinc oxide-praseodymium.
• the varistor body has a plurality of electrical connections, of which at least one first electrical connection makes contact with the semiconductor component.
• This electrical connection is preferably designed as a metallic layer on the varistor body.
• the metallic layer can be applied to at least one area of the upper side of the varistor body, for example by screen printing.
• the electrical connections are preferably bondable.
• Both a first electrical connection and a second electrical connection can be embodied as metallic layers.
• Electrical connections of the varistor body designed as metallic layers may contain at least one of the following materials: gold, nickel, chromium, palladium, tin.
• the second electrical connection is arranged at a distance from the first electrical connection on the upper side of the varistor body.
• both terminals could comprise contact wires which connect the varistor body to the semiconductor component or to the ground.
• the first electrical connection of the varistor body which contacts the semiconductor component, simultaneously forms a contact of the varistor body to the outside, optionally using a contact wire used with the first electrical connection.
• the varistor body has at least one inner electrode which can be used to adjust the capacitance of the varistor body.
• the inner electrode may be arranged between the layers of a layer stack.
• the internal electrode may be a ground electrode which dissipates overvoltages or surge currents through the varistor or from the varistor body.
• the inner electrode is connected to at least one electrical connection of the varistor body, but mechanical contacting is not absolutely necessary in this case.
• the inner electrode could therefore be arranged "floating" in the interior of the varistor body
• the inner electrode is connected to the at least one electrical connection by means of at least one through-connection, also referred to as a via.
• a plurality of internal electrodes are provided in the varistor body and contact different electrical terminals of the varistor body.
• the internal electrodes can be designed to float or contact outwards. It is preferred that they are separated from one another by means of a varistor ceramic or by means of a dielectric and have common overlapping surfaces in the stacking direction, by means of which capacitances can be generated.
• the inner electrodes are perpendicular to the mounting surface of the semiconductor device according to an embodiment.
• the housing has at least one electrically conductive part or region which is contacted with the varistor body and / or with the semiconductor component.
• the housing carries the varistor body, wherein the semiconductor device and the varistor body are connected in parallel with the electrically conductive part of the housing.
• the electrically conductive part of the housing can be designed as a metallic layer, for example as a conductor track.
• the electrically conductive part of the housing preferably contains aluminum or copper.
• the housing has at least one heat-conducting region which is thermally coupled to the common carrier or the common heat sink of the varistor body and of the semiconductor component.
• this thermally conductive region of the housing may have a good heat-conducting material, such as a good heat-conducting ceramic or a metal.
• the component arrangement additionally has a thermistor, which is connected to the semiconductor component.
• a thermistor which is connected to the semiconductor component.
• the thermistor is mounted on the varistor body according to one embodiment, but need not be. Instead, it could be arranged on the common carrier or the common heat sink next to the varistor body or separated from the carrier in a common housing.
• the thermistor may be connected to an evaluation unit that uses measured values of the thermistor to regulate the current feeding the semiconductor device.
• the control of the control current is such that the LED no surge currents is exposed or is operated under constant AC power.
• the semiconductor device may be selected from a variety of components. It may be an optoelectronic device, such as e.g. an LED, a capacitor or a multilayer capacitor, a thermistor or a multilayer thermistor with PTC or NTC properties, a diode or an amplifier.
• the varistor body is capable of gently protecting the semiconductor device contacted with it from overvoltages and even, according to some embodiments described in this document, capable of dissipating heat from the semiconductor device.
• An LED as a semiconductor device is preferably composed of one or more of the following materials: gallium phosphide (GaP), gallium nitride (GaN), gallium arsenic phosphide (GaAsP), aluminum gallium indium phosphide
• AlGaInP aluminum gallium phosphide
• AlGaAs aluminum gallium arsenide
• InGaN aluminum nitride
• AlN aluminum gallium indium nitride
• AlGaInN AlGaInN
• ZnSe tin selenide
• the component arrangement with the common ceramic heat sink has the advantage of being commercially exploitable as a single product.
• Figure 1 is a schematic plan view of a component arrangement, in which a
• FIG. 2 is a cross-sectional view of the varistor body shown with the drain layer in FIG. 1;
• FIG. 3 shows a schematic plan view according to FIG. 1, with the difference that the varistor body is contacted by means of a plurality of underside contacts with different conductor tracks and has at least one inner electrode,
• FIG. 7 shows a perspective view of a component arrangement
• FIG. 8 shows a representation of the component arrangement with or in a housing.
• FIG. 1 shows the plan view of an optoelectronic component arrangement in which a semiconductor component 1, here an LED, and a varistor body 2 are arranged separately from one another on a common, heat-conducting, ceramic carrier 3.
• the LED has on the upper side an anode terminal 7a and a ground terminal 7b.
• the terminals 7a and 7b each comprise a bonding pad as well as a contact wire which is connected to one on the ceramic Heat sink applied conductor 8 is connected.
• Conductor tracks contacted with the terminals of the LED 1 are shaped such that they are each connected to an electrical terminal of the varistor body 2.
• the varistor body 2 has on the upper side a first electrical connection 4a, for example an anode connection, which is designed as a bonding pad.
• a second electrical connection 4b (not visible in the perspective of this figure), for example a ground connection.
• the second electrical connection 4b of the varistor body 2 connected to the conductor track 8 may be designed as a bond pad or preferably as a flip-chip contact.
• FIG. 2 shows a cross-sectional view of the varistor body 2 shown in FIG. 1.
• the upper-side first electrical connection 4 a and the lower-side second electrical connection 4 b, in each case as a layer, are shown.
• the second electrical connection 4b is preferably a ground connection.
• a varistor body 2 or varistor chip according to a preferred embodiment has the following dimensions:
• the varistor chip could have laterally mounted electrical connections.
• the electrical connections preferably each form a closed layer, for example of materials containing nickel and / or tin (Sn).
• Layer thicknesses of outer contacts of a varistor body or varistor chip designed as layers can be between 0.9 and 3.1 ⁇ m.
• FIG. 4 shows a cross-sectional view of the varistor body shown in FIG. 3 in plan view.
• the varistor body 2 comprises a layer stack of varistor-ceramic layers, between which an inner electrode 5 is arranged.
• On the underside of the varistor body surface contact pads 4a and 4b are arranged, which form a surface connection with the respective conductor 8 on the ceramic heat sink 3.
• FIG. 5 shows a varistor body 2 according to FIG. 4, with the difference that the contact pads 4a and 4b mounted on the underside are each composed of a planar contact pad protruding a little from the underside of the varistor body and a hemispherical contact pad, which are placed one above the other.
• the flat contact pads are applied directly to the varistor body and the hemispherical contact pads on the underside of the respective surface contact pads.
• FIG. 6 shows a varistor body 2, which has a first electrical connection 4a on the upper side, for example in the form of a planar contact pad projecting from the upper side of the varistor body 2, for example by means of a contact wire, either directly or indirectly by means of a conductor 8 with a corresponding one electrical, same-pole terminal 7a of the semiconductor device is contacted, for example an anode connection.
• a first electrical connection 4a on the upper side for example in the form of a planar contact pad projecting from the upper side of the varistor body 2, for example by means of a contact wire, either directly or indirectly by means of a conductor 8 with a corresponding one electrical, same-pole terminal 7a of the semiconductor device is contacted, for example an anode connection.
• the varistor body shown with this figure does not differ from that of the previous figure.
• these lower-side electrical connections can be differently contacted to the outside.
• both lower-side electrical connections 4b could be contacted with a ground connection on the ceramic heat sink.
• FIG. 6 also shows plated-through holes 6, which run perpendicular to the plane of the ceramic heat sink, and connect internal electrodes 5 to electrical terminals 4a and 4b.
• a first via 6 connects an upper-side electrical terminal 4a having a first inner electrode.
• Further plated-through holes 6 connect a second inner electrode to the plurality of lower-side electrical terminals 4b of the varistor body 2.
• the inner electrodes differently connected to plated-through holes in this way are decoupled from one another by means of a varistor ceramic.
• An inner electrode 5 of a first electrical pole should thus enter into an electrical connection with an inner electrode 5 of a second pole only if the varistor ceramic present between them becomes electrically conductive.
• the plated-through holes 6 can be formed as holes filled with an electrically conductive material, for example metal.
• varistor bodies shown here can have a composite material made of a varistor ceramic as a matrix, as well as a filler with good heat conductivity, for example metal spheres or metal particles. If it is a multilayer varistor body, at least one layer or several layers can contain the good heat-conducting filler.
• FIG. 7 shows an optoelectronic component arrangement in a perspective view.
• the component arrangement additionally has a housing 10 with a depression or pit 15.
• the ceramic heat sink 3 This may have one or more plated-through holes 9, which connect a ground terminal of the varistor body 2 with a ground terminal 14 of the housing.
• the ceramic heat sink 3 may be printed with a conductor 8 such that it connects the ground terminal of the varistor body 2 to the ground terminal 14 of the housing.
• a semiconductor component 1 applied to the ceramic heat sink 3 is connected at the top by means of a contact wire to a first electrically conductive part 12 of the housing.
• the varistor body 2 is connected by means of contact wire to a second electrically conductive part 13 of the housing.
• the first, second and ground terminal 14 serving, electrically conductive third part of the housing 10 are electrically decoupled from each other by means of an insulation 13.
• the semiconductor device is an LED
• the depression 15 has a reflective coating on its surface exposed to the light of the LED.
• the serving as a mass, electrically conductive part of the housing 14 may for example consist of a metal such as copper or aluminum.
• a metal is preferred that is electrically conductive with low resistance and has a high reflectivity for improved light extraction.
• the varistor body 2 is the common heat sink of the varistor body 2 and the
• Semiconductor device 1 with a good thermal conductivity region of the housing mechanically connected, but in any case thermally coupled thereto, so that the housing 10 absorbed by the common heat sink heat, which is from the varistor body 2 and / or from the semiconductor element 1 or emitted by these can be further derived to the outside.

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• Engineering & Computer Science (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Physics & Mathematics (AREA)
• Electromagnetism (AREA)
• Thermistors And Varistors (AREA)

Priority Applications (5)

Applications Claiming Priority (2)

Publications (1)

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ID=41077724

Family Applications (1)

Country Status (7)

Cited By (5)

Families Citing this family (5)

Citations (3)

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• 2008
  • 2008-05-21 DE DE102008024481.3A patent/DE102008024481B4/de active Active
• 2009
  • 2009-05-14 US US12/994,141 patent/US8378455B2/en not_active Expired - Fee Related
  • 2009-05-14 KR KR1020107028769A patent/KR101529364B1/ko active Active
  • 2009-05-14 CN CN2009801285833A patent/CN102105949A/zh active Pending
  • 2009-05-14 JP JP2011509932A patent/JP5548194B2/ja active Active
  • 2009-05-14 EP EP09749756.4A patent/EP2289074B1/de active Active
  • 2009-05-14 WO PCT/EP2009/055861 patent/WO2009141266A1/de not_active Ceased

Patent Citations (3)

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