WO2009107542A1 - Procédé de fabrication d'un dispositif émetteur de lumière et appareil de fabrication utilisé dans le procédé - Google Patents

Procédé de fabrication d'un dispositif émetteur de lumière et appareil de fabrication utilisé dans le procédé Download PDF

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Publication number
WO2009107542A1
WO2009107542A1 PCT/JP2009/052884 JP2009052884W WO2009107542A1 WO 2009107542 A1 WO2009107542 A1 WO 2009107542A1 JP 2009052884 W JP2009052884 W JP 2009052884W WO 2009107542 A1 WO2009107542 A1 WO 2009107542A1
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Prior art keywords
tube
cylindrical tube
emitting device
raw material
organic
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PCT/JP2009/052884
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English (en)
Japanese (ja)
Inventor
暁 山本
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フジテック・インターナショナル株式会社
有限会社マイクロシステム
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Publication of WO2009107542A1 publication Critical patent/WO2009107542A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • the present invention relates to a method for manufacturing a light emitting device and a manufacturing apparatus used therefor, and particularly to a method for manufacturing a light emitting device including an organic EL element formed on the inner surface of a tube and a manufacturing apparatus used therefor.
  • a cylindrical surface emitting device in which an organic EL (Electro Luminescence) element is formed has been proposed.
  • a surface emitting device has a cylindrical transparent base material (tube) and an organic EL element formed on the transparent base material.
  • a film forming method of the organic EL element is, for example, any one of a vacuum vapor deposition method, a sputtering method, and a CVD (Chemical Vapor Deposition) method.
  • the released raw material adheres to the inner surface of the tube, thereby forming a film constituting the organic EL.
  • a vacuum deposition method when the vapor deposition source and one end of the tube are arranged to face each other, the evaporated raw material enters the tube from one end of the tube, and the inside of the tube extends in the length direction of the tube. Go ahead. In this process, the longer the distance the raw material travels in the length direction of the tube, the more the raw material is diffused. Therefore, on the inner surface of the tube, a thick film is formed in the vicinity of one end portion of the tube, and a thin film is formed in the vicinity of the other end portion of the tube. Due to the variation in the thickness of the film, there has been a problem that the non-uniformity of the light emission characteristics on the inner surface of the tube is increased.
  • the present invention has been made in view of the above problems, and an object of the present invention is to provide a method for manufacturing a light emitting device with high uniformity of light emitting characteristics on the inner surface of the tube and a manufacturing apparatus used therefor.
  • Another object of the present invention is to provide a method for manufacturing a light emitting device and a manufacturing apparatus used therefor, in which raw materials can be used efficiently.
  • the light emitting device manufacturing method of the present invention is a method for manufacturing a light emitting device including a tube and an organic EL element formed on the inner surface of the tube, and includes the following steps.
  • a tube is prepared.
  • the organic EL is formed on the inner surface of the tube by performing the discharge while moving at least one of the discharge portion and the tube so that the tube and the discharge portion for discharging the organic EL element material to the inner surface of the tube move relative to each other.
  • An element is formed.
  • the organic EL element is formed on the inner surface of the tube while the tube and the emitting portion move relative to each other, the relative positional relationship between the tube and the emitting portion is fixed.
  • the film can be formed on the inner surface of the tube with a uniform thickness. Therefore, the uniformity of the light emission characteristics on the inner surface of the tube can be improved.
  • the relative motion includes a motion in which the tube and the discharge portion disposed in the tube are relatively displaced in the length direction of the tube. Since the discharge part is arranged in the tube, a large proportion of the released material reaches the inner surface of the tube, so that an expensive raw material for organic EL can be efficiently formed for film formation on the inner surface of the tube. Can be used. Therefore, the manufacturing cost of the light emitting device can be reduced. Moreover, since the discharge
  • the relative motion includes a motion in which the tube rotates around the length direction of the tube.
  • the uniformity of the film thickness around the length direction of the tube can be improved.
  • the discharge is performed by scattering the raw material arranged inside the tube from the discharge portion.
  • a film forming method in which raw materials are scattered, such as a vacuum evaporation method or a sputtering method.
  • a gaseous raw material extends from the outside of the tube to the inside using a raw material supply path that extends from the outside to the inside of the tube and has an end on the inside of the tube serving as a discharge portion.
  • the release is performed by flowing.
  • membrane of a different material can be formed continuously by changing the kind of the gaseous raw material flowed from the exterior of a pipe
  • the release is performed as a raw material into the inside of the tube supported so that the length direction of the tube is inclined with respect to the direction of gravity and rotating about the length direction of the tube. This is done by pouring liquid. This makes it possible to form a film using a polymer organic EL material, which is difficult to form using a vacuum deposition method.
  • the light emitting device manufacturing apparatus of the present invention is a light emitting device manufacturing apparatus including a tube and an organic EL element formed on the inner surface of the tube, and includes a discharge unit and a drive unit.
  • the emission part is configured to be able to release the raw material of the organic EL element to the inner surface of the tube.
  • the drive unit is configured to allow the discharge unit and the tube to perform relative movement when the discharge unit is discharging the raw material.
  • the relative motion includes a motion in which the tube and the discharge portion disposed in the tube are relatively displaced in the length direction of the tube. Since the discharge part is arranged in the tube, a large proportion of the released material reaches the inner surface of the tube, so that an expensive raw material for organic EL can be efficiently formed for film formation on the inner surface of the tube. Can be used. Therefore, the manufacturing cost of the light emitting device can be reduced. Moreover, since the discharge
  • the relative motion includes a motion in which the tube rotates around the length direction of the tube.
  • the uniformity of the film thickness around the length direction of the tube can be improved.
  • the emission unit has a plurality of emission parts
  • the light emission device manufacturing device further includes a container and a transport unit.
  • the container contains a plurality of discharge portions.
  • the transport unit is configured to sequentially move the tube to a position corresponding to each of the plurality of discharge portions in the container.
  • film formation using each of the plurality of discharge portions can be continuously performed without taking out the tube from the container.
  • the inner surface of the tube is more uniform than when the relative positional relationship between the tube and the discharge portion is fixed.
  • Film formation can be performed with a thickness. Therefore, the uniformity of the light emission characteristics on the inner surface of the tube can be improved.
  • FIG. 1 It is sectional drawing which shows schematically the structure of the film-forming apparatus as a manufacturing apparatus of the light-emitting device in Embodiment 2 of this invention. It is a fragmentary sectional view which shows schematically the structure of the film-forming apparatus as a manufacturing apparatus of the light-emitting device in Embodiment 3 of this invention. It is a top view which shows roughly the structure of the film-forming apparatus as a manufacturing apparatus of the light-emitting device in Embodiment 3 of this invention. It is a top view which shows roughly a mode that the film-forming apparatus as a manufacturing apparatus of the light-emitting device in Embodiment 3 of this invention is conveying the cylindrical tube.
  • Embodiments of the present invention will be described below. (Embodiment 1) First, the structure of the light emitting device of this embodiment will be described.
  • FIG. 1 is a cross-sectional view schematically showing the configuration of the light-emitting device according to Embodiment 1 of the present invention.
  • the light emitting device of the present embodiment includes a cylindrical tube 1, an organic EL element 12, sealing parts 110 and 110, electrodes 112a and 112b, and wirings 113a and 113b.
  • the cylindrical tube 1 is a translucent tube having a hollow portion extending in the length direction (LD direction in the figure). More specifically, the cylindrical tube 1 is a tube made of, for example, soda lime glass and having a diameter of 50 mm, a length of 540 mm, and a thickness of 1 mm.
  • the organic EL element 12 has a protective layer 12a, a transparent anode layer 12b, first to fourth layers 12c to 12f, and a cathode layer 12g in this order on the inner surface of the cylindrical tube 1.
  • the protective layer 12a has a function of preventing movement of alkali metal ions. Therefore, even if a material containing alkali metal ions such as soda lime glass is used as the material of the cylindrical tube 1, the alkali metal ions are prevented from moving from the cylindrical tube 1 to the transparent anode layer 12b.
  • the protective layer 12a is a layer having a thickness of 10 nm formed of, for example, silicon oxide (SiO 2 ).
  • the transparent anode layer 12 b has translucency and functions as an anode of the organic EL element 12.
  • the transparent anode layer 12b is a 1 ⁇ m thick layer formed of, for example, indium tin oxide (ITO (Tin doped Indium Oxide)).
  • the first layer 12c is a layer having a thickness of 40 nm formed from, for example, an organic material (NPD) represented by the following formula (1).
  • NPD organic material
  • the second layer 12d is made of, for example, an organic material (Znbox 2) represented by the following formula (2) as a main component and 1.5% by weight of perylene (C 20 H 12 ) represented by the following formula (3). It is a 7 nm thick layer that has been doped.
  • Znbox 2 organic material represented by the following formula (2) as a main component
  • perylene C 20 H 12
  • the third layer 12e has, for example, an organic material (Znbox2) represented by the above formula (2) as a main component and is doped with 0.25 wt% by the organic material (DCM1) represented by the following formula (4). It was a layer with a thickness of 23 nm.
  • the fourth layer 12f is a layer having a thickness of 30 nm formed from, for example, the organic material (Znbox 2) represented by the above formula (2).
  • the cathode layer 12g has a function as a cathode of the organic EL element 12, and is a layer having a thickness of 0.5 ⁇ m formed of, for example, aluminum.
  • regions on the organic EL element 12 becomes the space SP for short circuit prevention which is an area
  • the first layer 12c has a function as a hole transport layer
  • the fourth layer 12f has a function as an electron transport layer.
  • Each of the second layer 12d and the third layer 12e has a function as a light emitting layer by containing perylene and DCM1 as dopant dyes. Blue light and orange light emission are generated in each of the second layer 12d and the third layer 12e, and white light is obtained by mixing these two colors of light.
  • Each of the sealing parts 110 and 110 seals the inside of the cylindrical tube 1 filled with the inert gas 115.
  • One end of the wiring 113a is electrically connected to the transparent anode layer 12b, and the other end of the wiring 113a is electrically connected to the electrode 112a.
  • One end of the wiring 113b is electrically connected to the cathode layer 12g, and the other end of the wiring 113b is electrically connected to the electrode 112b.
  • Each of the electrodes 112a and 112b is formed so as to penetrate the sealing component 110. With this configuration, a voltage is applied between the transparent anode layer 12b and the cathode layer 12g by applying a voltage between the electrode 112a and the electrode 112b exposed outside the sealing region of the cylindrical tube 1. This voltage causes light emission in the light emitting layer.
  • FIG. 2 is a cross-sectional view schematically showing a configuration of a vacuum vapor deposition apparatus as a light emitting apparatus manufacturing apparatus according to Embodiment 1 of the present invention.
  • FIG. 2 also shows a cylindrical tube, an organic EL element being formed, and a solid material.
  • film forming apparatus 100 ⁇ / b> V as the light emitting device manufacturing apparatus of the present embodiment is a manufacturing of a light emitting device including cylindrical tube 1 and organic EL element 12 formed on the inner surface of cylindrical tube 1.
  • the film forming apparatus 100V mainly includes a vacuum vessel 5, a fixing jig 2, a crucible 9v (discharge unit), a cooler 7, and driving units 3 and 11.
  • the vacuum vessel 5 can be depressurized to a pressure suitable for vacuum deposition by a vacuum pump 6.
  • the fixing jig 2 is a jig for supporting the cylindrical tube 1 in the vacuum vessel 5.
  • the fixing jig 2 supports the cylindrical tube 1 by holding an edge portion at one end portion (upper end portion in the drawing) in the length direction LD of the cylindrical tube 1 as indicated by a broken line portion F in the drawing. can do.
  • only the outer peripheral side of the edge portion of the cylindrical tube 1 is held by the fixing jig 2, but only the inner peripheral side or both the outer peripheral side and the inner peripheral side may be held.
  • one end of the cylindrical tube 1 is held by the fixing jig 2, but both ends of the cylindrical tube 1 may be held.
  • the crucible 9v can be heated by the heater 10. Thereby, the solid raw material 8b put in the crucible 9v can be heated.
  • the crucible 9v has an upper lid 9vL in addition to the main body portion.
  • the upper lid 9vL is fixed to the main body portion of the crucible 9v so that a gap GP is provided between the upper lid 9vL and the main body portion.
  • the material of the crucible 9v is, for example, boron nitride.
  • the cooler 7 is configured to cool the cylindrical tube 1 by taking heat from the outer surface portion of the cylindrical tube 1.
  • the drive unit has a rotation introducer 3 and a linear drive mechanism 11.
  • the rotation introducer 3 supports the fixing jig 2 so that the fixing jig 2 can rotate around the longitudinal direction LD of the cylindrical tube 1.
  • the rotation introducer 3 is configured to be able to transmit the rotational force of the rotation motor 4a to the fixed jig 2.
  • the cylindrical tube 1 can be rotated around the longitudinal direction LD of the cylindrical tube 1.
  • the cylindrical tube 1 can perform the rotation motion about the longitudinal direction LD of the cylindrical tube 1 when viewed from the crucible 9v. That is, the crucible 9v and the cylindrical tube 1 can perform relative motion.
  • the linear drive mechanism 11 is configured to be able to linearly displace the crucible 9v in the cylindrical tube 1 along the length direction LD of the cylindrical tube 1. By this displacement, the cylindrical tube 1 and the crucible 9v arranged in the cylindrical tube 1 can be relatively displaced in the longitudinal direction LD of the cylindrical tube 1. That is, the crucible 9v and the cylindrical tube 1 can perform relative motion.
  • solid raw material 8b corresponding to each of protective layer 12a, transparent anode layer 12b, first to fourth layers 12c to 12f, and cathode layer 12g, and cylindrical tube 1 are prepared. Is done. Then, vacuum deposition is performed by the film forming apparatus 100V while changing the type of the solid material 8b stored in the crucible 9v. Thereby, the organic EL element 12 is formed on the inner surface of the cylindrical tube 1. Next, the sealing components 110 and 110, the electrodes 112a and 112b, and the wirings 113a and 113b are attached, and the inside of the cylindrical tube 1 is filled with an inert gas 115. Thereby, a light emitting device (FIG. 1) is obtained.
  • a powder raw material is prepared as the solid raw material 8b used for vacuum deposition of the first to fourth layers 12c to 12f.
  • a crucible 9v is prepared for each raw material.
  • one of the plurality of crucibles 9v in which the solid raw materials 8b corresponding to the first to fourth layers 12c to 12f are accommodated is attached in the vacuum vessel 5.
  • the cylindrical tube 1 is attached to the film forming apparatus 100V by the fixing jig 2.
  • the inside of the vacuum vessel 5 is depressurized by the vacuum pump 6.
  • the temperature of the cylindrical tube 1 is kept at 50 ° C. or lower.
  • the rotary motor 4a is driven, the cylindrical tube 1 rotates about the length direction LD. Due to the rotation of the cylindrical tube 1, the cylindrical tube 1 performs a rotation operation about the longitudinal direction LD of the cylindrical tube 1 as viewed from the crucible 9 v.
  • the rotation speed is, for example, 30 rpm.
  • the crucible 9 v is displaced so as to reciprocate in the cylindrical tube 1 along the length direction LD of the cylindrical tube 1.
  • the displacement speed is, for example, 20 mm / second.
  • the cylindrical tube 1 and the crucible 9v disposed in the cylindrical tube 1 are relatively displaced in the longitudinal direction LD of the cylindrical tube 1. That is, the crucible 9v and the cylindrical tube 1 perform relative motion.
  • the solid raw material 8b is heated by flowing a direct current through the heater 10, whereby the solid raw material 8b evaporates from the crucible 9v through the gap GP. That is, the solid raw material 8b arranged inside the cylindrical tube 1 is scattered from the crucible 9v to the periphery thereof. At least a part of the scattered solid raw material 8b adheres to the inner surface of the cylindrical tube 1, so that a layer is formed on the inner surface of the cylindrical tube 1 by vacuum deposition.
  • a plurality of crucibles 9v containing solid materials 8b of different materials are sequentially used and vacuum deposition is performed, so that a laminated structure including the first to fourth layers 12c to 12f is obtained.
  • a crucible 9v containing an aluminum material as the solid raw material 8b is attached in the vacuum vessel 5. Further, the cylindrical tube 1 in which the first to fourth layers 12c to 12f are formed is attached to the film forming apparatus 100V by the fixing jig 2. A cylindrical mask is inserted into the cylindrical tube 1 so as to cover the short prevention space SP (FIG. 1). Next, vacuum deposition similar to the formation process of the first to fourth layers 12c to 12f is performed. Thereby, the cathode layer 12g is formed.
  • the transparent anode layer 12b can also be formed by a sputtering method using a sputtering apparatus instead of the above-described vacuum deposition method. This forming method will be described below.
  • FIG. 3 is a cross-sectional view schematically showing a configuration of a sputtering apparatus as a light emitting apparatus manufacturing apparatus according to Embodiment 1 of the present invention.
  • FIG. 3 also shows a cylindrical tube, an organic EL element being formed, and a raw material target.
  • FIG. 4 is a schematic partial perspective view showing the shape and arrangement of parallel plates that are electrodes of the sputtering apparatus of FIG.
  • sputtering apparatus 100 ⁇ / b> S as the light emitting device manufacturing apparatus of the present embodiment includes magnetron electrode 9 e (emission part), parallel plate 22, high frequency power supply 23, lamp heater 21, and the like. , Ar (argon) gas cylinder 25 and mass flow meter 16.
  • the magnetron electrode 9e is configured such that the raw material target 8t can be placed so that the target surface of the raw material target 8t faces the inner surface of the cylindrical tube 1.
  • the high frequency power source 23 is connected so that high frequency power can be applied between the magnetron electrode 9e and the parallel plate 22 made of metal.
  • the Ar gas cylinder 25 is connected to the vacuum vessel 5 via the mass flow meter 16.
  • the linear drive mechanism 11 is configured such that the magnetron electrode 9e can be displaced in the cylindrical tube 1 in the longitudinal direction LD of the cylindrical tube 1. By this displacement, the cylindrical tube 1 and the magnetron electrode 9e disposed in the cylindrical tube 1 can be relatively displaced in the longitudinal direction LD of the cylindrical tube 1. That is, the magnetron electrode 9e and the cylindrical tube 1 perform relative motion.
  • the lamp heater 21 is configured to heat the cylindrical tube 1 by heating the outer surface portion of the cylindrical tube 1. Since the configuration other than the above is almost the same as the configuration of the film forming apparatus 100V, the same elements are denoted by the same reference numerals and the description thereof is omitted.
  • a method for forming the transparent anode layer 12b by sputtering will be described.
  • a raw material target 8t made of ITO and a cylindrical tube 1 are prepared.
  • a raw material target 8t is attached on the magnetron electrode 9e.
  • the cylindrical tube 1 is attached to the sputtering apparatus 100S by the fixing jig 2. While the inside of the vacuum vessel 5 is evacuated by the vacuum pump 6, Ar gas is supplied to the vacuum vessel 5 from the Ar gas cylinder 25 via the mass flow meter 16 at a rate of 20 sccm / min, so that the pressure in the vacuum vessel 5 is reduced to 0. .0001 atm.
  • the temperature of the cylindrical tube 1 is maintained at 300 ° C.
  • the cylindrical tube 1 rotates about the length direction LD. Due to the rotation of the cylindrical tube 1, the cylindrical tube 1 rotates around the longitudinal direction LD of the cylindrical tube 1 as viewed from the magnetron electrode 9 e.
  • the rotation speed is, for example, 30 rpm.
  • the magnetron electrode 9 e is displaced so as to reciprocate in the cylindrical tube 1 along the length direction LD of the cylindrical tube 1.
  • the displacement speed is, for example, 20 mm / second. Due to this displacement, the cylindrical tube 1 and the magnetron electrode 9e disposed in the cylindrical tube 1 are relatively displaced in the longitudinal direction LD of the cylindrical tube 1.
  • the magnetron electrode 9e and the cylindrical tube 1 perform relative motion.
  • a high-frequency power having a frequency of 13.56 MHz and an output of 100 W is applied between the magnetron electrode 9 e and the parallel plate 22 by the high-frequency power source 23.
  • the raw material target 8t is sputtered by the Ar plasma generated thereby.
  • the raw material target 8t disposed inside the cylindrical tube 1 is scattered from above the magnetron electrode 9e. At least a part of the scattered raw material target 8t adheres to the inner surface of the cylindrical tube 1, whereby the transparent anode layer 12b is formed on the inner surface of the cylindrical tube 1.
  • a plasma CVD apparatus 100R used for the plasma CVD method mainly includes parallel plates 22x and 22y, a high-frequency power source 23, a gas raw material 20, a mass flow meter 16, a lamp heater 21, And a gas pipe 71.
  • the gaseous raw material 20 for example, TEOS (Tetra Ortho Silicate) gas, oxygen (O 2 ) gas, and helium (He) gas are prepared.
  • the process gas can be transferred to the vacuum vessel 5 via the gas pipe 71 under conditions of TEOS gas 0.1 sccm / min, oxygen gas 10 sccm / min, and helium gas 500 cc / min. Introduced in. Further, the pressure in the vacuum vessel 5 is maintained at 0.01 atm by the vacuum pump 6. The temperature of the entire cylindrical tube 1 is kept at 300 ° C. by the lamp heater 21. When the rotary motor 4a is driven, the cylindrical tube 1 rotates at 30 rpm.
  • the high frequency power supply 23 applies high frequency power having a frequency of 13.56 MHz and an output of 50 W between the parallel plates 22x and 22y. Plasma is generated in the cylindrical tube 1 by this high frequency power.
  • the plasma introduced into the cylindrical tube 1 is decomposed by the plasma, whereby a protective layer 12a is formed on the inner surface of the cylindrical tube 1.
  • the cylindrical tube 1 and the crucible 9v (FIG. 2) or the magnetron electrode 9e (FIG. 3) perform relative movement, the relative positional relationship between the cylindrical tube 1 and the discharge portion is fixed. Compared with the case where it is formed, the film can be formed on the inner surface of the cylindrical tube 1 with a uniform thickness. Therefore, the uniformity of the light emission characteristics of the organic EL element 12 formed on the inner surface of the cylindrical tube 1 can be improved.
  • the crucible 9v (FIG. 2) or the magnetron electrode 9e (FIG. 3) is arranged in the cylindrical tube 1, so that a large proportion of the raw material released from the crucible 9v or the magnetron electrode 9e is outside the cylindrical tube 1. It reaches the inner surface of the cylindrical tube 1 without being scattered. For this reason, an expensive raw material for the organic EL element 12 can be efficiently used for film formation on the inner surface of the cylindrical tube 1. Therefore, the manufacturing cost of the light emitting device can be reduced.
  • the film thickness uniformity in the length direction LD is increased regardless of the length of the cylindrical tube 1. Can be increased.
  • the cylindrical tube 1 rotates about the length direction LD, the uniformity of the thickness of each layer constituting the organic EL element 12 around the length direction LD can be improved.
  • the solid raw material 8b can be scattered toward the inner surface of the cylindrical tube 1.
  • the raw material target 8t can be scattered toward the inner surface of the cylindrical tube 1.
  • the first to fourth layers 12c to 12f are formed by a gas transport method.
  • the gas transport method is also called an OVPD (Organic Vapor Phase Deposition) method and is a film forming method including the following steps.
  • the starting material made of organic matter is sublimated or evaporated by heating. Sublimated or evaporated organics are included in the carrier gas. While heating so as not to re-solidify the organic matter, the carrier gas containing the organic matter is transported to a region where the film is formed. The region where the film is formed is cooled, and the film is formed by re-solidifying the organic substance in the carrier gas in this region.
  • FIG. 6 is a cross-sectional view schematically showing a configuration of a film forming apparatus as a light emitting apparatus manufacturing apparatus according to Embodiment 2 of the present invention.
  • FIG. 6 also shows a cylindrical tube and an organic EL element being formed.
  • film forming apparatus 100G as the light emitting device manufacturing apparatus of the present embodiment includes raw material supply path 19, heater 10, gas transport pipe 72, vaporizer 13, oven 14, It has a mass flow meter 16, a gas heater 17, and a gas cylinder 15.
  • the raw material supply path 19 is a tubular member extending from the outside to the inside of the cylindrical tube 1.
  • the end portion (upper end portion in the figure) on the inner side of the cylindrical tube 1 is an opening.
  • the raw material supply path 19 can flow gas from the outside to the inside of the cylindrical tube 1, and the upper end portion of the raw material supply path 19 becomes a gas nozzle 9g (discharge section) from which this gas can be discharged.
  • gas nozzle 9g discharge section
  • the end portion (the lower end portion in the drawing) on the outer side of the cylindrical tube 1 is connected to the gas cylinder 15 via the gas transport pipe 72.
  • the gas cylinder 15 is a carrier gas supply source in the gas transportation method.
  • a mass flow meter 16 In the middle of the gas transport pipe 72, a mass flow meter 16, a gas heater 17, and a vaporizer 13 are provided in order from the gas cylinder 15 side.
  • the oven 14 has a function of generating the evaporation raw material 18 (gaseous raw material) from the solid raw material 8 b stored in the vaporizer 13 by heating the vaporizer 13.
  • the heater 10 has a function of heating the gas transport pipe 72 between the gas heater 17 and the gas nozzle 9g.
  • the linear drive mechanism 11 is configured such that the gas nozzle 9 g can be displaced in the cylindrical tube 1 along the length direction LD of the cylindrical tube 1. By this displacement, the cylindrical tube 1 and the gas nozzle 9g arranged in the cylindrical tube 1 can be relatively displaced in the longitudinal direction LD of the cylindrical tube 1. That is, the gas nozzle 9g and the cylindrical tube 1 perform relative motion. Since the configuration other than the above is substantially the same as the configuration of the film forming apparatus 100V of the first embodiment, the same elements are denoted by the same reference numerals and the description thereof is omitted.
  • a method of forming the first to fourth layers 12c to 12f (FIG. 1) by the gas transport method using the film forming apparatus 100G will be described.
  • a powdered solid raw material 8b made of the material of the first layer 12c and the cylindrical tube 1 are prepared. Then, the solid raw material 8 b is put in the vaporizer 13. Further, the cylindrical tube 1 is attached to the film forming apparatus 100G by the fixing jig 2. While the inside of the vacuum vessel 5 is evacuated by the vacuum pump 6, N 2 (nitrogen) gas is supplied from the gas cylinder 15 to the vacuum vessel 5 by the mass flow meter 16 at 500 sccm / min. Held at 001 atm.
  • the heater 10 keeps the temperature of the gas transport pipe 72 between the gas heater 17 and the gas nozzle 9g at 300 ° C.
  • the cylindrical tube 1 is kept at 2 ° C. by the cooler 7.
  • the rotary motor 4a is driven, the cylindrical tube 1 rotates about the length direction LD. Due to the rotation of the cylindrical tube 1, the cylindrical tube 1 is rotated about the length direction LD of the cylindrical tube 1 as viewed from the gas nozzle 9 g.
  • the rotation speed is, for example, 30 rpm.
  • the gas nozzle 9 g is displaced so as to reciprocate in the cylindrical tube 1 along the length direction LD of the cylindrical tube 1.
  • the displacement speed is, for example, 20 mm / second.
  • the cylindrical tube 1 and the gas nozzle 9 g disposed in the cylindrical tube 1 are relatively displaced in the longitudinal direction LD of the cylindrical tube 1. That is, the gas nozzle 9g and the cylindrical tube 1 perform relative motion.
  • the oven 14 is turned on, the solid raw material 8 b is heated, and the vaporized raw material 18 is generated from the vaporizer 13.
  • the evaporating raw material 18 is flown along with the carrier gas from the outside to the inside of the cylindrical tube 1 and is blown out from the gas nozzle 9g.
  • the evaporated raw material 18 is cooled on the inner surface of the cylindrical tube 1 so that the evaporated raw material 18 is solidified again. By this re-solidification, the first layer 12 c is formed on the inner surface of the cylindrical tube 1.
  • the material of the solid raw material 8b is sequentially changed from the material of the first layer 12c to the materials of the second to fourth layers 12d to 12f, so that the second layer is formed on the first layer 12c.
  • a fourth layer 12f is formed. If a plurality of pairs of the vaporizer 13 and the oven 14 are provided and each pair is selectively connected to the gas nozzle 9g by a valve, the first to fourth layers 12c to 12f are continuously formed by opening and closing the valve. Film formation can be performed.
  • the same effect as in the first embodiment can be obtained by using the gas transport method. Further, by changing the material of the solid raw material 8b put in the vaporizer 13, a laminated film composed of the first to fourth layers 12c to 12f can be continuously formed.
  • FIG. 7 is a partial cross-sectional view schematically showing a configuration of a film forming apparatus as a light emitting apparatus manufacturing apparatus according to Embodiment 3 of the present invention.
  • FIG. 8 is a top view schematically showing a configuration of a film forming apparatus as a light emitting apparatus manufacturing apparatus according to Embodiment 3 of the present invention.
  • FIG. 7 also shows a cylindrical tube, an organic EL element being formed, and a solid material.
  • a cylindrical tube is shown in addition to the film forming apparatus main body.
  • a part of the structure on the upper surface side of the film forming apparatus is not shown in order to make the drawing easy to see.
  • film forming apparatus 100 ⁇ / b> P as the light emitting device manufacturing apparatus according to the present embodiment includes a cylindrical tube 1 and an organic EL element 12 formed on the inner surface of cylindrical tube 1. This is a device manufacturing apparatus.
  • the film forming apparatus 100P mainly includes a plurality of fixing jigs 2, a plurality of crucibles 9v (a plurality of discharge portions), a revolving table 84 (a transport unit), and a plurality of driving units.
  • the revolution table 84 is provided in the vacuum vessel 5 and has a disk shape.
  • a revolving motor 4b and a revolving motor 4c provided outside the vacuum vessel 5 are attached to the center of one surface of the revolving table 84 via a revolving mechanism 28.
  • the revolution table 84 can rotate around an axis AX passing through the center of the disk shape.
  • a plurality of fixing jigs 2 are provided along the outer periphery of the other surface of the table 84 for revolution. With this configuration, the revolving table 84 can revolve around the center of the circular shape of the revolving table 84 by rotating itself.
  • Each of the drive units includes a rotation transmission belt 83 and a linear drive mechanism 11.
  • the fixing jig 2 can rotate by receiving the driving force of the rotation motor 4 c via the rotation transmission belt 83.
  • the linear drive mechanism 11 is provided in each of the plurality of crucibles 9v.
  • the film forming apparatus 100P further includes a preliminary chamber 81, a transfer chamber 82, a linear transfer device 30, and a gate valve 29.
  • the preliminary chamber 81 is connected to the vacuum vessel 5 via the transfer chamber 82.
  • the linear transporter 30 has a function of transporting the cylindrical tube 1 between the preliminary chamber 81 and the vacuum vessel 5.
  • the gate valve 29 can open and close between the transfer chamber 82 and the vacuum vessel 5.
  • each of the plurality of crucibles 9v corresponds to the protective layer 12a, the transparent anode layer 12b, the first to fourth layers 12c to 12f, and the cathode layer 12g of the organic EL element 12.
  • a solid raw material 8b is stored.
  • the cylindrical tube 1 is attached to the linear transporter 30 in the spare chamber 81.
  • the gate valve 29 is opened, and the cylindrical tube 1 is moved into the vacuum vessel 5 by the linear transporter 30. Then, the cylindrical tube 1 is attached to the fixing jig 2. Next, the linear transporter 30 returns to the original position, and the gate valve 29 is closed.
  • the protective layer 12a is formed by the same method as the film forming method using the film forming apparatus 100V (FIG. 2). That is, the protective layer 12a is formed on the inner surface of the cylindrical tube 1 centered on the length direction LD. During the film formation, the revolution table 84 around the axis AX is not rotated.
  • the crucible 9v is pulled out of the cylindrical tube 1 by being moved downward in the figure (on the side of the linear drive mechanism 11) by the linear drive mechanism 11.
  • the solid material 8b evaporating from the crucible 9v is blocked by the shutter 27.
  • the revolution table 84 is rotated by a fixed angle about the axis AX by the rotation motor 4a.
  • the cylindrical tube 1 revolves by a fixed angle around the axis AX, and reaches above the crucible 9v in which the solid raw material 8b corresponding to the transparent anode layer 12b is stored.
  • the transparent anode layer 12b is formed on the protective layer 12a by a method similar to the film forming method using the film forming apparatus 100V (FIG. 2).
  • the organic EL element 12 is formed by further forming the first to fourth layers 12c to 12f and the cathode layer 12g.
  • At least one of the plurality of layers constituting the organic EL element 12 may be formed by a film forming apparatus 100V, a sputtering apparatus 100S, or a film forming apparatus 100G which is an apparatus other than the film forming apparatus 100P.
  • FIGS. 10 to 15 are schematic top views showing the order of forming organic EL elements using a film forming apparatus as a light emitting apparatus manufacturing apparatus in a modification of the third embodiment of the present invention. 10 to 15, a part of the structure on the upper surface side of the film forming apparatus is not shown in order to make the drawings easy to see.
  • the film forming apparatus 100C has a transfer robot 91 in place of the revolution table 84 (FIGS. 8 and 9) in the film forming apparatus 100P.
  • the transfer robot 91 By sequentially moving the cylindrical tube 1 to positions corresponding to a plurality of crucibles (not shown in FIGS. 10 to 15) by the transfer robot 91, the organic EL elements 12 are configured continuously in the vacuum vessel 5. Multiple layers can be formed.
  • a plurality of layers can be continuously formed without removing the cylindrical tube 1 from the vacuum vessel 5, so that the organic EL element 12 can be formed efficiently.
  • FIG. 16 is a cross sectional view schematically showing a configuration of a film forming apparatus as a light emitting apparatus manufacturing apparatus according to Embodiment 4 of the present invention.
  • FIG. 16 also shows a cylindrical tube, an organic EL element being formed, and a liquid source.
  • film forming apparatus 100 ⁇ / b> L of the present embodiment includes fixing jig 2, supply pipe 34, tilt mechanism 35, rotation motor 4 a, pulley 32, and hollow bearing 31.
  • the supply pipe 34 is configured so that the liquid raw material 33 can be poured into one end side of the cylindrical pipe 1 supported by the fixed jig 2.
  • the tilt mechanism 35 supports the fixing jig 2 via the hollow bearing 31.
  • the length direction LD of the cylindrical tube 1 is inclined with respect to the direction of gravity, and one end side (side on which the liquid raw material 33 is poured) of the cylindrical tube 1 is positioned above the other end side.
  • the rotation motor 4 a can drive the fixed jig 2 to rotate through the hollow bearing 31.
  • the cylindrical tube 1 supported by the fixing jig 2 can be rotated about the length direction LD.
  • the protective layer 12a, the transparent anode layer 12b, and the first layer 12c are formed on the inner surface of the cylindrical tube 1 by the method described in the first embodiment.
  • the cylindrical tube 1 is attached to the fixing jig 2 of the film forming apparatus 100L.
  • the tilt mechanism 35 By the tilt mechanism 35, the length direction LD of the cylindrical tube 1 is inclined with respect to the direction of gravity.
  • the rotation motor 4a By driving the rotation motor 4a, the cylindrical tube 1 is rotated about the length direction LD.
  • a liquid raw material 33 prepared by dissolving the raw material of the light emitting layer of the organic EL element 12L in a solvent is prepared.
  • the liquid raw material 33 is poured from the supply pipe 34 to the upper end of the cylindrical pipe 1. As a result, a layer made of the liquid raw material 33 is formed on the inner surface of the cylindrical tube 1 by a coating method. The surplus portion of the poured liquid raw material 33 falls from the other end side (lower side in the figure) of the cylindrical tube 1 to the outside of the cylindrical tube 1. Next, when the cylindrical tube 1 is heated, the solvent evaporates from the layer formed by the above coating method. Thereby, only the raw material of the light emitting layer in the liquid raw material 33 remains, and the light emitting layer is formed. Next, the fourth layer 12f and the cathode layer 12g are formed on the light emitting layer by the method described in the first embodiment. Thereby, the organic EL element 12L is formed.
  • the liquid raw material 33 is, for example, polyfluorene, which is a high molecular weight organic material represented by the following formula (5), and a low molecular weight organic material represented by the following formula (6). It is an aqueous solution of Ir (ppy) 3 which is an iridium complex of the material.
  • a light emitting layer in which poly (fluorene) is doped with Ir (ppy) 3 can be formed by film formation by the film forming apparatus 100L using the liquid raw material 33.
  • the layer formed by the film forming apparatus 100L is not limited to the light emitting layer of the organic EL element 12L.
  • the hole injection layer of the organic EL element 12L can be formed by using an aqueous solution of PEDOT, which is a polymer organic material represented by the following formula (7), as the liquid raw material 33.
  • a stabilizer for dispersing the polymer material in water to the liquid raw material 33.
  • a stabilizer (PSS) represented by the following formula (8) can be used.
  • FIG. 17 is a cross-sectional view schematically showing a configuration of a film forming apparatus as a light emitting apparatus manufacturing apparatus according to a modification of the fourth embodiment of the present invention.
  • FIG. 17 also shows a cylindrical tube, an organic EL element being formed, and a liquid source.
  • the cylindrical tube 1 is attached to the apparatus so that the length direction LD of the cylindrical tube 1 and the rotation center RC of the cylindrical tube 1 form an angle TH of 0 degrees or more. It is attached.
  • the angle TH is greater than 0 °
  • the cylindrical tube 1 rotates in an eccentric state.
  • a force for moving the liquid raw material 33 toward the outside of the cylindrical tube 1 is given inside the cylindrical tube 1.
  • the cylindrical tube 1 is rotated around the length direction LD when the liquid raw material 33 is poured, compared with the case where the cylindrical tube 1 is fixed.
  • the film can be formed on the inner surface of the cylindrical tube 1 with a uniform thickness. Therefore, the uniformity of the light emission characteristics of the organic EL element 12L formed on the inner surface of the cylindrical tube 1 can be improved.
  • a layer made of a polymer organic material can be formed on the inner surface of the cylindrical tube 1 as a part of the organic EL element 12L.
  • a film forming method in which the raw material itself needs to evaporate such as a vapor deposition method or a gas transport method.
  • the cylindrical tube 1 that is, a tube having a circular cross section perpendicular to the length direction of the tube is used as the tube, but the present invention is not limited to this.
  • the cross-sectional shape perpendicular to the length direction of the tube may be, for example, elliptical or polygonal.
  • the present invention can be applied particularly advantageously to a method for manufacturing a light emitting device including an organic EL element formed on the inner surface of a tube and a manufacturing apparatus used therefor.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

Procédé consistant à former un élément électroluminescent organique (12) sur une surface intérieure d'un tube cylindrique (1) par dépôt d'un matériau constituant l'élément électroluminescent organique (12) simultanément au déplacement d'une partie de dépôt (9v) et/ou du tube cylindrique (1) de façon à obtenir un mouvement réciproque entre le tube cylindrique (1) et la partie de dépôt (9v) déposant le matériau sur la surface intérieure du tube cylindrique (1).
PCT/JP2009/052884 2008-02-29 2009-02-19 Procédé de fabrication d'un dispositif émetteur de lumière et appareil de fabrication utilisé dans le procédé WO2009107542A1 (fr)

Applications Claiming Priority (2)

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JP2008-049103 2008-02-29
JP2008049103A JP2009206008A (ja) 2008-02-29 2008-02-29 発光装置の製造方法およびそれに用いる製造装置

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WO2009107542A1 true WO2009107542A1 (fr) 2009-09-03

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JP4774550B1 (ja) * 2011-04-04 2011-09-14 フジテック・インターナショナル株式会社 成膜装置および成膜方法
WO2016132175A1 (fr) * 2015-02-19 2016-08-25 Pct Protective Coating Technologies Ltd. Revêtement ou scellement de surface interne d'une pièce de fabrication

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JP2000079944A (ja) * 1998-07-01 2000-03-21 Toppan Printing Co Ltd プラスチック容器およびその製造方法
JP2002173764A (ja) * 2000-12-06 2002-06-21 Denki Kagaku Kogyo Kk 容器内面の蒸着膜コート方法及びそれに用いるヒータ
JP2003321765A (ja) * 2002-04-30 2003-11-14 Sanyo Shinku Kogyo Kk 有機物の蒸着方法及びこの方法に用いられる蒸着装置ならびに蒸発源
JP2004022401A (ja) * 2002-06-18 2004-01-22 Sony Corp 有機膜形成装置および有機膜形成方法
JP2007073403A (ja) * 2005-09-08 2007-03-22 Toppan Printing Co Ltd 面発光デバイス
JP2008063618A (ja) * 2006-09-07 2008-03-21 Pentax Corp 真空蒸着装置、及び真空蒸着方法

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JPS62297461A (ja) * 1986-06-17 1987-12-24 Hitachi Maxell Ltd 蒸着装置
JPH08199345A (ja) * 1995-01-30 1996-08-06 Mitsubishi Electric Corp 成膜装置及び成膜方法
JP4078326B2 (ja) * 2004-03-31 2008-04-23 三菱重工業株式会社 成膜装置及び方法
JP2006082814A (ja) * 2004-09-14 2006-03-30 Dainippon Printing Co Ltd ガスバリア性プラスチック容器
JP2006124739A (ja) * 2004-10-27 2006-05-18 Toppan Printing Co Ltd プラズマｃｖｄ法成膜装置

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Publication number Priority date Publication date Assignee Title
JP2000079944A (ja) * 1998-07-01 2000-03-21 Toppan Printing Co Ltd プラスチック容器およびその製造方法
JP2002173764A (ja) * 2000-12-06 2002-06-21 Denki Kagaku Kogyo Kk 容器内面の蒸着膜コート方法及びそれに用いるヒータ
JP2003321765A (ja) * 2002-04-30 2003-11-14 Sanyo Shinku Kogyo Kk 有機物の蒸着方法及びこの方法に用いられる蒸着装置ならびに蒸発源
JP2004022401A (ja) * 2002-06-18 2004-01-22 Sony Corp 有機膜形成装置および有機膜形成方法
JP2007073403A (ja) * 2005-09-08 2007-03-22 Toppan Printing Co Ltd 面発光デバイス
JP2008063618A (ja) * 2006-09-07 2008-03-21 Pentax Corp 真空蒸着装置、及び真空蒸着方法

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