WO2009101299A1 - Dispositif comportant un composant organique et une couche d'encapsulation avec un matériau réactif à l'humidité - Google Patents
Dispositif comportant un composant organique et une couche d'encapsulation avec un matériau réactif à l'humidité Download PDFInfo
- Publication number
- WO2009101299A1 WO2009101299A1 PCT/FR2008/001703 FR2008001703W WO2009101299A1 WO 2009101299 A1 WO2009101299 A1 WO 2009101299A1 FR 2008001703 W FR2008001703 W FR 2008001703W WO 2009101299 A1 WO2009101299 A1 WO 2009101299A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- moisture
- reactive
- organic
- component
- Prior art date
Links
- 239000000463 material Substances 0.000 title claims abstract description 38
- 238000005538 encapsulation Methods 0.000 title claims abstract description 22
- 230000004888 barrier function Effects 0.000 claims abstract description 17
- 239000011159 matrix material Substances 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000011575 calcium Substances 0.000 claims description 6
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 5
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- QZTQQBIGSZWRGI-UHFFFAOYSA-N 2-n',7-n'-bis(3-methylphenyl)-2-n',7-n'-diphenyl-9,9'-spirobi[fluorene]-2',7'-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=C3C4(C5=CC=CC=C5C5=CC=CC=C54)C4=CC(=CC=C4C3=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 QZTQQBIGSZWRGI-UHFFFAOYSA-N 0.000 claims description 3
- ZDAWFMCVTXSZTC-UHFFFAOYSA-N 2-n',7-n'-dinaphthalen-1-yl-2-n',7-n'-diphenyl-9,9'-spirobi[fluorene]-2',7'-diamine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C(=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C23C4=CC=CC=C4C4=CC=CC=C43)C2=C1 ZDAWFMCVTXSZTC-UHFFFAOYSA-N 0.000 claims description 3
- 239000005725 8-Hydroxyquinoline Substances 0.000 claims description 3
- 229960003540 oxyquinoline Drugs 0.000 claims description 3
- MCJGNVYPOGVAJF-UHFFFAOYSA-N quinolin-8-ol Chemical compound C1=CN=C2C(O)=CC=CC2=C1 MCJGNVYPOGVAJF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052788 barium Inorganic materials 0.000 claims description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052792 caesium Inorganic materials 0.000 claims description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 2
- 230000005693 optoelectronics Effects 0.000 abstract description 5
- 125000002524 organometallic group Chemical group 0.000 abstract description 2
- 229910052783 alkali metal Inorganic materials 0.000 abstract 1
- 150000001340 alkali metals Chemical class 0.000 abstract 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 1
- 150000001342 alkaline earth metals Chemical class 0.000 abstract 1
- 239000007769 metal material Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 53
- 238000000231 atomic layer deposition Methods 0.000 description 3
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 3
- MQRCTQVBZYBPQE-UHFFFAOYSA-N 189363-47-1 Chemical compound C1=CC=CC=C1N(C=1C=C2C3(C4=CC(=CC=C4C2=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC(=CC=C1C1=CC=C(C=C13)N(C=1C=CC=CC=1)C=1C=CC=CC=1)N(C=1C=CC=CC=1)C=1C=CC=CC=1)C1=CC=CC=C1 MQRCTQVBZYBPQE-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- DHDHJYNTEFLIHY-UHFFFAOYSA-N 4,7-diphenyl-1,10-phenanthroline Chemical compound C1=CC=CC=C1C1=CC=NC2=C1C=CC1=C(C=3C=CC=CC=3)C=CN=C21 DHDHJYNTEFLIHY-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- KWQNQSDKCINQQP-UHFFFAOYSA-K tri(quinolin-8-yloxy)gallane Chemical compound C1=CN=C2C(O[Ga](OC=3C4=NC=CC=C4C=CC=3)OC=3C4=NC=CC=C4C=CC=3)=CC=CC2=C1 KWQNQSDKCINQQP-UHFFFAOYSA-K 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/02—Details
- H05B33/04—Sealing arrangements, e.g. against humidity
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/846—Passivation; Containers; Encapsulations comprising getter material or desiccants
Definitions
- the invention relates to a device comprising at least one organic component disposed on a substrate, the component being covered by an encapsulation layer, comprising at least one moisture reactive layer, said reactive layer comprising nodules of a moisture-reactive material dispersed in a matrix.
- Optoelectronic organic compounds for example organic electroluminescent diodes
- organic electroluminescent diodes are increasingly used and the number of their applications continues to grow.
- transparent protective means increasingly smaller and resistant to the external environment.
- organic light-emitting diodes are not protected or if their protection is not well adapted to external conditions, the diodes deteriorate.
- the degradation of the diodes comes mainly from the humidity of the external atmosphere which passes through the encapsulation means and which reacts with the materials constituting the diode.
- the diodes are encapsulated in a closed cavity 8 delimited between a glass cover 9 and a substrate 2 on which the diode 1 is integrated.
- This cavity is delimited by a bead of adhesive 10 which forms a peripheral seal.
- this cord glue 10 has limited performance vis-à-vis its impermeability to moisture.
- a solid getter material 11 is then placed in the cavity to react with the moisture that passes through the walls and thus preserve the diode.
- this type of encapsulation can only be used with rigid substrates and / or cavities which are large enough to integrate a getter material next to the diode. This type of integration is therefore difficult to industrialize for current products at low cost.
- a monolithic encapsulation that is to say an encapsulation constituted by one or more layers having excellent barrier qualities with respect to moisture, for example stacks AI 2 0 3 / polymer / Al 2 ⁇ 3 or SiO x / SiN / SiO x .
- stacks AI 2 0 3 / polymer / Al 2 ⁇ 3 or SiO x / SiN / SiO x stacks AI 2 0 3 / polymer / Al 2 ⁇ 3 or SiO x / SiN / SiO x .
- the object of the invention is a device having an encapsulation layer which is easy to implement and which provides increased protection of an organic optoelectronic component vis-à-vis the moisture of the outside atmosphere.
- said matrix being organic
- said moisture-reactive material is chosen from alkaline-earth materials and alkalis
- said organic matrix being chosen among naphthylphenylbiphenyl (BPhen) materials, based on 8-hydroxyquinoline, based on BPhen
- Figure 1 illustrates, in section, a device according to the prior art.
- Figures 2 and 3 show, in section, two particular embodiments of a device according to the invention.
- the organic component 1 is disposed on a substrate 2, to form all or part of a device.
- the organic component 1 may be a light emitter and / or a light receiver, for example an organic light-emitting diode or a photovoltaic cell.
- the organic component 1 can also be an organic transistor.
- the substrate 2 may be a rigid substrate, for example made of silicon or glass, or a flexible substrate, for example made of a polymer material, for example PET (polyethylene terephthalate) or PEN. (Polyethylene Naphthalene).
- the device comprises at least one transparent face allowing the transmission of the working length of the optoelectronic organic component 1 if the component is a transmitting and / or light receiving component.
- the organic component 1, disposed on the substrate 2, is covered by an encapsulation layer 3 to protect it from the humidity of the environment outside.
- the encapsulation layer 3 has a continuous, moisture-responsive layer 5, itself having a moisture-responsive material.
- the encapsulation layer also comprises a layer 6 of barrier material, which has a low moisture permeability of the external atmosphere.
- the moisture reactive layer 5 consists of a continuous film of moisture-reactive material on which the barrier layer 6 is deposited.
- the moisture reactive layer 5 is constituted by a plurality of nodules 4 made of moisture-reactive material dispersed in an organic matrix 7.
- the moisture-reactive material is for example a material chosen from alkaline elements, alkaline-earth elements or an alloy based on one of these materials.
- the reactive material is preferably calcium Ca, cesium Ce or barium Ba 1 deposited by physical vapor deposition.
- the moisture-reactive material may also be an organometallic derivative, for example, AIQ3 (tris (8-hydroxyquinolinato) aluminum), GaQ3 or lnQ3.
- the layer 5 consists of a continuous film of alkaline or alkaline earth element, its thickness is typically of the order of a few atomic monolayers, which allows it to remain transparent.
- the thickness of the reactive layer 5 is advantageously less than 5 nm. A greater thickness can be used if the encapsulation layer can be substantially opaque, for example in the case where an organic light-emitting diode emits light radiation through the substrate ("bottom emission" in English) or if the component is a organic transistor.
- the reactive layer 5 may also be also of AIQ3 typically having a thickness between 50 and 10Onm.
- the layer 5 is constituted by an organic matrix 7 comprising nodules of moisture-reactive material 4, the organic matrix 7 is chosen from the transparent materials in the working wavelength of the component 1, if it is desired obtain a transparent layer 5.
- the organic matrix 7 is chosen from BPhen (4,7-diphenyl-l, 10-phenanthroline) based 8-hydroxyquinoline based materials of Spiro-TAD (2,2 ', 7, 7'-Tetrakis (di-phenylamino) -9,9'-spirobifluorene), based on Spiro-TTB®-Tetrakis (N, N'-di-p-methylphenylamino) -9,9'-spirobifluorene ), based on Spiro-NPB (N 1 N 1 -Diphenyl-N, N'-bis (C 1 -C) naphthyl) -I-biphenyl-diamine, based on Spiro-TPD (2,2 ', 7, I- Tetra- (m-tolyl-phenylamino) -9,9'-spirobifluorene), based on TMM4, based on SEB010, based on based
- the thickness of the organic matrix is typically less than or equal to 10 nm if it is desired for this layer to remain transparent. However, larger thicknesses can be integrated if transparency is not sought. These materials are advantageous to use if they are already integrated in the method of producing the diode, as active organic layers. They can in particular be deposited in the same deposit chamber as the diode itself.
- the organic matrix 7 contains less than 2% by weight of moisture-reactive material to remain transparent.
- the moisture reactive layer 5 may consist of a layer of BPhen (4,7-diphenyl-1, 10-phenanthroline) comprising 2% of calcium.
- the torque (thickness / concentration of moisture-reactive material) of the reactive layer 5 is defined so that the reactive layer 5 is transparent.
- a barrier layer 6 is disposed on the reactive layer 5 to delay the contact between the humidity of the external environment and the reactive layer.
- the encapsulation layer 3 comprises another barrier layer 6, which separates the reactive layer 5 from the organic optoelectronic component 1.
- this reactive layer and in particular the material of the organic matrix must be compatible with such a deposit.
- Organic materials whose glass transition temperature is sufficiently high, for example greater than 100 ° C., will then be preferred in order to avoid any crystallization problems.
- the encapsulation layer 3 is constituted by an alternation of barrier layers 6 and reactive layers 5, the encapsulation layer 3 starting and ending then with a barrier layer 6.
- the barrier layer 6 is advantageously alumina (Al 2 O 3 ), deposited by atomic layer deposition ("Atomic Layer Deposition" in English).
- the barrier layer 6 may be, for example, silicon oxide
- SiO 2 in stoichiometric silicon nitride or not (Si x NL), or in silicon oxynitride (SiO x N y ) and be deposited by plasma enhanced chemical vapor deposition or by atomic layer deposition.
- the thickness of the barrier layer 6 is typically between 5 and 10Onm. If the transmission of light is through the encapsulation layer 3, the thickness of the different layers constituting the encapsulation layer is then chosen so that it is transparent.
- the total reactive layer thickness is advantageously less than or equal to 5 nm for calcium layers and less than or equal to 100 nm for AlQ3 layers. Moreover, if the reactive layer 5 consists of organic matrix films with nodules 4 of material, this total thickness is advantageously less than 100 nm.
- an additional moisture reactive layer may be disposed between the component 1 and the substrate 2.
- Nodules 4 of reactive material may also be arranged in the substrate if it does not have intrinsic characteristics sufficient to barrier the moisture.
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010537485A JP2011507252A (ja) | 2007-12-14 | 2008-12-08 | 有機コンポーネントと湿気反応材料を含むパッケージ層とを備える装置 |
AT08872326T ATE526693T1 (de) | 2007-12-14 | 2008-12-08 | Vorrichtung mit einer organischen komponente und eingekapselte schicht mit einem feuchtigkeitsreaktivem material |
EP08872326A EP2220702B1 (fr) | 2007-12-14 | 2008-12-08 | Dispositif comportant un composant organique et une couche d'encapsulation avec un matériau réactif à l'humidité |
KR1020157026200A KR101649460B1 (ko) | 2007-12-14 | 2008-12-08 | 수분 반응성 물질을 갖는 캡슐화 층 및 유기 컴포넌트를 포함하는 디바이스 |
US12/746,042 US8227800B2 (en) | 2007-12-14 | 2008-12-08 | Device comprising an organic component and an encapsulation layer with a moisture-reactive material |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0708743A FR2925224B1 (fr) | 2007-12-14 | 2007-12-14 | Dispositif comportant un composant organique et une couche d'encapsulation avec un materiau reactif a l'humidite |
FR07/08743 | 2007-12-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009101299A1 true WO2009101299A1 (fr) | 2009-08-20 |
Family
ID=39642978
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2008/001703 WO2009101299A1 (fr) | 2007-12-14 | 2008-12-08 | Dispositif comportant un composant organique et une couche d'encapsulation avec un matériau réactif à l'humidité |
Country Status (7)
Country | Link |
---|---|
US (1) | US8227800B2 (fr) |
EP (1) | EP2220702B1 (fr) |
JP (2) | JP2011507252A (fr) |
KR (2) | KR20100108335A (fr) |
AT (1) | ATE526693T1 (fr) |
FR (1) | FR2925224B1 (fr) |
WO (1) | WO2009101299A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013008143A1 (fr) | 2011-07-08 | 2013-01-17 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique organique et son procede d'encapsulation |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101920445B1 (ko) * | 2010-05-25 | 2018-11-20 | 삼성전자주식회사 | 발광 장치 |
TWI432320B (zh) * | 2010-08-09 | 2014-04-01 | Ind Tech Res Inst | 封裝膜、封裝結構與其形成方法 |
FR2982073B1 (fr) * | 2011-10-28 | 2014-10-10 | Commissariat Energie Atomique | Structure d'encapsulation hermetique d'un dispositif et d'un composant electronique |
JP2017532722A (ja) * | 2014-08-22 | 2017-11-02 | オーエルイーディーワークス ゲーエムベーハーOLEDWorks GmbH | 発光デバイス |
JP5932928B2 (ja) | 2014-09-22 | 2016-06-08 | 株式会社東芝 | 光電変換装置 |
CN106201142B (zh) * | 2016-07-15 | 2018-11-06 | 京东方科技集团股份有限公司 | 一种内嵌式触摸屏、其驱动方法及显示装置 |
US11779416B2 (en) | 2018-01-04 | 2023-10-10 | Covidien Lp | Robotic surgical systems and instrument drive assemblies |
CN113380957A (zh) * | 2020-03-10 | 2021-09-10 | 杭州纤纳光电科技有限公司 | 一种钙钛矿光电组件及其封装工艺 |
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EP1164644A2 (fr) * | 2000-06-12 | 2001-12-19 | General Electric Company | Substrats plastiques ayant des propriétés de barrière améliorées pour des dispositifs sensibles à l'eau et/ou à l'oxygène |
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US20060170341A1 (en) * | 2005-02-02 | 2006-08-03 | Chih-Hung Su | Encapsulation structure of organic electroluminescence device |
DE102005005579A1 (de) * | 2005-02-07 | 2006-08-24 | Schott Ag | OLED-Verkapselung mit Wasserdampf- und sauerstoffabsorbierenden Zwischenschichten |
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JPH07169567A (ja) * | 1993-12-16 | 1995-07-04 | Idemitsu Kosan Co Ltd | 有機el素子 |
JP2001345175A (ja) * | 2000-06-01 | 2001-12-14 | Stanley Electric Co Ltd | 有機el表示装置 |
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-
2007
- 2007-12-14 FR FR0708743A patent/FR2925224B1/fr not_active Expired - Fee Related
-
2008
- 2008-12-08 KR KR1020107012972A patent/KR20100108335A/ko not_active Application Discontinuation
- 2008-12-08 WO PCT/FR2008/001703 patent/WO2009101299A1/fr active Application Filing
- 2008-12-08 JP JP2010537485A patent/JP2011507252A/ja active Pending
- 2008-12-08 US US12/746,042 patent/US8227800B2/en active Active
- 2008-12-08 AT AT08872326T patent/ATE526693T1/de not_active IP Right Cessation
- 2008-12-08 KR KR1020157026200A patent/KR101649460B1/ko active IP Right Grant
- 2008-12-08 EP EP08872326A patent/EP2220702B1/fr active Active
-
2014
- 2014-08-12 JP JP2014164465A patent/JP5905543B2/ja active Active
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EP1164644A2 (fr) * | 2000-06-12 | 2001-12-19 | General Electric Company | Substrats plastiques ayant des propriétés de barrière améliorées pour des dispositifs sensibles à l'eau et/ou à l'oxygène |
US20060077651A1 (en) * | 2001-02-15 | 2006-04-13 | Semiconductor Energy Laboratory Co., Ltd. | EL display device and electronic device |
US20060087230A1 (en) * | 2004-10-22 | 2006-04-27 | Eastman Kodak Company | Desiccant film in top-emitting OLED |
US20060093795A1 (en) * | 2004-11-04 | 2006-05-04 | Eastman Kodak Company | Polymeric substrate having a desiccant layer |
US20060170341A1 (en) * | 2005-02-02 | 2006-08-03 | Chih-Hung Su | Encapsulation structure of organic electroluminescence device |
DE102005005579A1 (de) * | 2005-02-07 | 2006-08-24 | Schott Ag | OLED-Verkapselung mit Wasserdampf- und sauerstoffabsorbierenden Zwischenschichten |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013008143A1 (fr) | 2011-07-08 | 2013-01-17 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif optoelectronique organique et son procede d'encapsulation |
US9209366B2 (en) | 2011-07-08 | 2015-12-08 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Organic optoelectronic device and method for the encapsulation thereof |
Also Published As
Publication number | Publication date |
---|---|
US8227800B2 (en) | 2012-07-24 |
KR101649460B1 (ko) | 2016-08-19 |
FR2925224B1 (fr) | 2010-06-18 |
EP2220702A1 (fr) | 2010-08-25 |
JP2011507252A (ja) | 2011-03-03 |
JP5905543B2 (ja) | 2016-04-20 |
US20100276818A1 (en) | 2010-11-04 |
KR20150118192A (ko) | 2015-10-21 |
FR2925224A1 (fr) | 2009-06-19 |
ATE526693T1 (de) | 2011-10-15 |
EP2220702B1 (fr) | 2011-09-28 |
KR20100108335A (ko) | 2010-10-06 |
JP2015043422A (ja) | 2015-03-05 |
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