WO2009093846A3 - 발광소자의 제조방법 - Google Patents

발광소자의 제조방법 Download PDF

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Publication number
WO2009093846A3
WO2009093846A3 PCT/KR2009/000319 KR2009000319W WO2009093846A3 WO 2009093846 A3 WO2009093846 A3 WO 2009093846A3 KR 2009000319 W KR2009000319 W KR 2009000319W WO 2009093846 A3 WO2009093846 A3 WO 2009093846A3
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WIPO (PCT)
Prior art keywords
light emitting
emitting device
manufacturing light
substrate
manufacturing
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PCT/KR2009/000319
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English (en)
French (fr)
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WO2009093846A2 (ko
Inventor
조성룡
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엘지이노텍주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 엘지이노텍주식회사 filed Critical 엘지이노텍주식회사
Priority to US12/514,751 priority Critical patent/US8017414B2/en
Priority to EP09703277.5A priority patent/EP2239790B1/en
Priority to CN2009801027615A priority patent/CN101926012B/zh
Publication of WO2009093846A2 publication Critical patent/WO2009093846A2/ko
Publication of WO2009093846A3 publication Critical patent/WO2009093846A3/ko

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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02491—Conductive materials
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02502—Layer structure consisting of two layers
    • H—ELECTRICITY
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H—ELECTRICITY
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
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    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
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Abstract

실시예는 발광소자의 제조방법에 관한 것이다. 실시예에 따른 발광소자의 제조방법은 실시예에 따른 발광소자의 제조방법은 결정 성장면이 a-면 또는 m-면을 갖는 기판을 준비하는 단계; 상기 기판 위에 버퍼층을 형성하는 단계; 상기 버퍼층 위에 반도체층을 형성하는 단계; 및 상기 버퍼층을 제거하여 상기 기판으로부터 상기 반도체층을 분리하는 단계;를 포함한다.
PCT/KR2009/000319 2008-01-21 2009-01-21 발광소자의 제조방법 WO2009093846A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/514,751 US8017414B2 (en) 2008-01-21 2009-01-21 Method for manufacturing light emitting device using non-polar substrate
EP09703277.5A EP2239790B1 (en) 2008-01-21 2009-01-21 Method for manufacturing light emitting device
CN2009801027615A CN101926012B (zh) 2008-01-21 2009-01-21 制造发光器件的方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2008-0006071 2008-01-21
KR20080006071A KR101510377B1 (ko) 2008-01-21 2008-01-21 질화물 반도체 및 수직형 발광 소자의 제조방법

Publications (2)

Publication Number Publication Date
WO2009093846A2 WO2009093846A2 (ko) 2009-07-30
WO2009093846A3 true WO2009093846A3 (ko) 2009-10-22

Family

ID=40901545

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/000319 WO2009093846A2 (ko) 2008-01-21 2009-01-21 발광소자의 제조방법

Country Status (5)

Country Link
US (1) US8017414B2 (ko)
EP (1) EP2239790B1 (ko)
KR (1) KR101510377B1 (ko)
CN (1) CN101926012B (ko)
WO (1) WO2009093846A2 (ko)

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US8071401B2 (en) * 2009-12-10 2011-12-06 Walsin Lihwa Corporation Method of forming vertical structure light emitting diode with heat exhaustion structure
CN102185071B (zh) * 2011-04-22 2013-04-24 浙江大学 一种非极性ZnO基发光器件及其制备方法
CN103066179B (zh) * 2013-01-14 2015-12-02 楼刚 蓝宝石衬底可自剥离的氮化镓薄膜制备用外延结构及方法
DE102014105208A1 (de) * 2014-04-11 2015-10-29 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Nitridverbindungshalbleiter-Bauelements
DE102015118042A1 (de) * 2015-10-22 2017-04-27 Nexwafe Gmbh Verfahren und Vorrichtung zum Herstellen einer Halbleiterschicht
CN109309082A (zh) * 2017-07-27 2019-02-05 兆远科技股份有限公司 紫外光发光二极管及其基板以及其基板的制造方法
CN114335274B (zh) * 2022-03-10 2022-06-17 江西兆驰半导体有限公司 一种发光二极管的外延结构及其制备方法

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KR20020084194A (ko) * 2000-03-14 2002-11-04 도요다 고세이 가부시키가이샤 Ｉｉｉ족 질화물계 화합물 반도체의 제조방법 및 ｉｉｉ족질화물계 화합물 반도체 소자
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Also Published As

Publication number Publication date
CN101926012B (zh) 2013-04-24
US8017414B2 (en) 2011-09-13
EP2239790A2 (en) 2010-10-13
WO2009093846A2 (ko) 2009-07-30
KR101510377B1 (ko) 2015-04-06
US20100317131A1 (en) 2010-12-16
KR20090080216A (ko) 2009-07-24
EP2239790B1 (en) 2018-04-04
EP2239790A4 (en) 2015-03-18
EP2239790A9 (en) 2010-11-24
CN101926012A (zh) 2010-12-22

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