WO2009081773A1 - 反射防止膜形成用組成物およびそれを用いたパターン形成方法 - Google Patents

反射防止膜形成用組成物およびそれを用いたパターン形成方法 Download PDF

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Publication number
WO2009081773A1
WO2009081773A1 PCT/JP2008/072681 JP2008072681W WO2009081773A1 WO 2009081773 A1 WO2009081773 A1 WO 2009081773A1 JP 2008072681 W JP2008072681 W JP 2008072681W WO 2009081773 A1 WO2009081773 A1 WO 2009081773A1
Authority
WO
WIPO (PCT)
Prior art keywords
composition
antireflection film
forming
group
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/072681
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Go Noya
Yasushi Akiyama
Yusuke Takano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AZ Electronic Materials Japan Co Ltd
EMD Performance Materials Corp
Original Assignee
AZ Electronic Materials Japan Co Ltd
AZ Electronic Materials USA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials Japan Co Ltd, AZ Electronic Materials USA Corp filed Critical AZ Electronic Materials Japan Co Ltd
Priority to CN2008801225113A priority Critical patent/CN101910946B/zh
Priority to US12/810,028 priority patent/US20100279235A1/en
Priority to EP08863406.8A priority patent/EP2233978B1/en
Publication of WO2009081773A1 publication Critical patent/WO2009081773A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
    • C08F216/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
    • C08F216/04—Acyclic compounds
    • C08F216/06—Polyvinyl alcohol ; Vinyl alcohol
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04—Acids; Metal salts or ammonium salts thereof
    • C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1818—C13or longer chain (meth)acrylate, e.g. stearyl (meth)acrylate

Definitions

  • a method of dispersing a dye having absorption in the wavelength region of light for exposure in a resist a method of providing a bottom antireflection film (BARC) or a top surface antireflection film (TARC), a top surface connection, etc.
  • BARC bottom antireflection film
  • TARC top surface antireflection film
  • MLR multilayer resist method
  • the method using the bottom antireflection film is the most commonly used method at present.
  • the bottom antireflection film an inorganic film and an organic film are known.
  • a top antireflection film to improve the swing curve or swing ratio.
  • a top antireflection film by applying a composition containing a fluorine compound such as perfluorooctanoic acid or perfluorooctanesulfonic acid to the top surface of a resist film.
  • a fluorine compound such as perfluorooctanoic acid or perfluorooctanesulfonic acid
  • Such an antireflection film on the upper surface can reduce the interference of light caused by fluctuations in the resist film thickness and improve the swing curve or swing ratio.
  • an antireflection film is used on top of the resist, it is effective to reduce the refractive index of the top antireflection film or to provide appropriate absorption in order to reduce the swing curve amplitude.
  • a fluorine-containing material is generally used as a material used therefor, but there is a problem that these compounds are very expensive.
  • a resist composition is applied on a substrate to form a resist film, the upper surface antireflection film-forming composition is applied onto the resist film, and dried, so that the thickness is 160 to 260 nm. Exposure and development using the above light.
  • a composition for forming a top antireflection film having a low refractive index, a gentle swing curve, and a small swing ratio can be provided at low cost, and has an excellent shape.
  • a resist pattern can be manufactured at low cost.
  • the anthracene skeleton-containing polymer must have an anthracene skeleton and a hydrophilic group, but the others are not particularly limited.
  • Such a copolymer may be a random copolymer or a block copolymer. Further, either or both of a monomer containing a hydrophilic group and a monomer containing an anthracene skeleton, or a combination of two or more types of monomers may be used.
  • the blending ratio of the monomer containing the hydrophilic group or the monomer containing the anthracene skeleton is not particularly limited, but the blending ratio of the monomer containing the hydrophilic group is 75 mol in order to maintain sufficient solubility in a solvent or a developer. % Or more is preferable, and 85 mol% or more is more preferable.
  • solubility in a solvent such as water contained in the composition is low, it may not be possible to obtain a sufficient antireflection film thickness to achieve the desired effect, and if the solubility in the developer is low, Care must be taken because it may remain on the substrate without being completely removed in the development step.
  • esters such as methyl acetate, ethyl acetate, ethyl lactate, etc.
  • ethers such as diethyl ether, dibutyl ether, etc.
  • other polar solvents such as dimethylformamide, dimethyl sulfoxide, methyl cellosolve, Any cellosolve, butyl cellosolve, cellosolve acetate, alkyl cellosolve acetate, butyl carbitol, carbitol acetate, etc. can be used depending on the purpose.
  • mixed solvents in which ethers having 2 to 20 carbon atoms are 50% by weight or more and the remaining hydrocarbons having 5 to 20 carbon atoms and / or alcohols having 1 to 20 carbon atoms are difficult to dissolve the resist film. Therefore, it is preferable.
  • a mixture of 90% by weight or more of water and a lower alcohol such as methyl alcohol, ethyl alcohol, or isopropyl alcohol is also preferable.
  • the composition for forming a top antireflection film according to the present invention can contain a basic compound as long as it does not impair the effects of the present invention.
  • a basic compound can act on the acid group to form a salt and improve the solubility. That is, by using a basic compound, the content of the anthracene skeleton-containing polymer in the composition is increased, and a thicker top surface antireflection film can be formed.
  • Examples of such basic compounds include ammonia, alkanolamines such as monoethanolamine, amines such as alkylamines and aromatic amines, and tetramethylammonium hydroxide.
  • any conventionally known resist composition can be used in the pattern forming method of the present invention.
  • Typical examples of the resist composition that can be used in the pattern forming method of the present invention include positive types, for example, those composed of a quinonediazide-based photosensitizer and an alkali-soluble resin, and chemically amplified resist compositions.
  • the resist composition layer formed on the substrate is pre-baked, for example, on a hot plate, and the solvent in the resist composition is removed to form a photoresist film.
  • the prebaking temperature varies depending on the solvent or resist composition used, but is usually 20 to 200 ° C., preferably about 50 to 150 ° C.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Paints Or Removers (AREA)
PCT/JP2008/072681 2007-12-26 2008-12-12 反射防止膜形成用組成物およびそれを用いたパターン形成方法 Ceased WO2009081773A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008801225113A CN101910946B (zh) 2007-12-26 2008-12-12 用于形成抗反射膜的组合物以及使用该组合物的图案形成方法
US12/810,028 US20100279235A1 (en) 2007-12-26 2008-12-12 Composition for formation of top anti-reflective film, and pattern formation method using the composition
EP08863406.8A EP2233978B1 (en) 2007-12-26 2008-12-12 Composition for formation of anti-reflective film, and pattern formation method using the composition

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007334891A JP4786636B2 (ja) 2007-12-26 2007-12-26 反射防止膜形成用組成物およびそれを用いたパターン形成方法
JP2007-334891 2007-12-26

Publications (1)

Publication Number Publication Date
WO2009081773A1 true WO2009081773A1 (ja) 2009-07-02

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ID=40801079

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Application Number Title Priority Date Filing Date
PCT/JP2008/072681 Ceased WO2009081773A1 (ja) 2007-12-26 2008-12-12 反射防止膜形成用組成物およびそれを用いたパターン形成方法

Country Status (8)

Country Link
US (1) US20100279235A1 (enExample)
EP (1) EP2233978B1 (enExample)
JP (1) JP4786636B2 (enExample)
KR (1) KR20100103833A (enExample)
CN (1) CN101910946B (enExample)
MY (1) MY153129A (enExample)
TW (1) TWI505035B (enExample)
WO (1) WO2009081773A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012506642A (ja) * 2008-10-21 2012-03-15 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 傾斜型の光学的特性を有するｂａｒｃを用いるフォトリソグラフィを実行するための方法

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5697523B2 (ja) * 2011-04-12 2015-04-08 メルクパフォーマンスマテリアルズＩｐ合同会社 上面反射防止膜形成用組成物およびそれを用いたパターン形成方法
JP2013254109A (ja) * 2012-06-07 2013-12-19 Az Electronic Materials Mfg Co Ltd 上層膜形成用組成物およびそれを用いたレジストパターン形成方法
US9804493B2 (en) 2013-11-22 2017-10-31 Samsung Electronics Co., Ltd. Composition for forming topcoat layer and resist pattern formation method employing the same
JP6445760B2 (ja) * 2013-11-22 2018-12-26 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 上層膜形成用組成物およびそれを用いたレジストパターン形成方法

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JP2002097231A (ja) * 2000-06-30 2002-04-02 Hynix Semiconductor Inc 有機反射防止膜の組成物及びその製造方法
JP3334304B2 (ja) 1993-11-30 2002-10-15 ソニー株式会社 半導体装置の製造方法
JP2007178974A (ja) * 2005-12-26 2007-07-12 Cheil Industries Inc フォトレジスト下層膜用ハードマスク組成物及びこれを利用した半導体集積回路デバイスの製造方法
JP2007219504A (ja) * 2006-01-08 2007-08-30 Rohm & Haas Electronic Materials Llc フォトレジストのためのコーティング組成物
JP2007256928A (ja) * 2006-01-29 2007-10-04 Rohm & Haas Electronic Materials Llc オーバーコートされるフォトレジストと共に使用するための被覆組成物
JP2007293332A (ja) * 2006-04-11 2007-11-08 Rohm & Haas Electronic Materials Llc フォトリソグラフィ用コーティング組成物

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US5180655A (en) * 1988-10-28 1993-01-19 Hewlett-Packard Company Chemical compositions for improving photolithographic performance
JP3284056B2 (ja) * 1995-09-12 2002-05-20 株式会社東芝 基板処理装置及びパターン形成方法
US6190839B1 (en) * 1998-01-15 2001-02-20 Shipley Company, L.L.C. High conformality antireflective coating compositions
AU2001292783A1 (en) * 2000-09-19 2002-04-02 Shipley Company, L.L.C. Antireflective composition
US7238462B2 (en) * 2002-11-27 2007-07-03 Tokyo Ohka Kogyo Co., Ltd. Undercoating material for wiring, embedded material, and wiring formation method
KR100713231B1 (ko) * 2005-12-26 2007-05-02 제일모직주식회사 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법
JP4727567B2 (ja) * 2006-12-27 2011-07-20 Ａｚエレクトロニックマテリアルズ株式会社 反射防止膜形成用組成物およびそれを用いたパターン形成方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3334304B2 (ja) 1993-11-30 2002-10-15 ソニー株式会社 半導体装置の製造方法
JP2002097231A (ja) * 2000-06-30 2002-04-02 Hynix Semiconductor Inc 有機反射防止膜の組成物及びその製造方法
JP2007178974A (ja) * 2005-12-26 2007-07-12 Cheil Industries Inc フォトレジスト下層膜用ハードマスク組成物及びこれを利用した半導体集積回路デバイスの製造方法
JP2007219504A (ja) * 2006-01-08 2007-08-30 Rohm & Haas Electronic Materials Llc フォトレジストのためのコーティング組成物
JP2007256928A (ja) * 2006-01-29 2007-10-04 Rohm & Haas Electronic Materials Llc オーバーコートされるフォトレジストと共に使用するための被覆組成物
JP2007293332A (ja) * 2006-04-11 2007-11-08 Rohm & Haas Electronic Materials Llc フォトリソグラフィ用コーティング組成物

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Title
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012506642A (ja) * 2008-10-21 2012-03-15 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド 傾斜型の光学的特性を有するｂａｒｃを用いるフォトリソグラフィを実行するための方法

Also Published As

Publication number Publication date
EP2233978A1 (en) 2010-09-29
MY153129A (en) 2014-12-31
EP2233978B1 (en) 2018-11-28
CN101910946A (zh) 2010-12-08
CN101910946B (zh) 2013-05-08
JP4786636B2 (ja) 2011-10-05
KR20100103833A (ko) 2010-09-28
TWI505035B (zh) 2015-10-21
US20100279235A1 (en) 2010-11-04
EP2233978A4 (en) 2011-10-19
EP2233978A8 (en) 2010-11-03
TW200937129A (en) 2009-09-01
JP2009157080A (ja) 2009-07-16

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