JP4786636B2 - 反射防止膜形成用組成物およびそれを用いたパターン形成方法 - Google Patents

反射防止膜形成用組成物およびそれを用いたパターン形成方法 Download PDF

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Publication number
JP4786636B2
JP4786636B2 JP2007334891A JP2007334891A JP4786636B2 JP 4786636 B2 JP4786636 B2 JP 4786636B2 JP 2007334891 A JP2007334891 A JP 2007334891A JP 2007334891 A JP2007334891 A JP 2007334891A JP 4786636 B2 JP4786636 B2 JP 4786636B2
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JP
Japan
Prior art keywords
antireflection film
composition
forming
resist
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007334891A
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English (en)
Japanese (ja)
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JP2009157080A5 (enExample
JP2009157080A (ja
Inventor
谷 剛 能
山 靖 秋
野 祐 輔 高
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AZ Electronic Materials Japan Co Ltd
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AZ Electronic Materials Japan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2007334891A priority Critical patent/JP4786636B2/ja
Application filed by AZ Electronic Materials Japan Co Ltd filed Critical AZ Electronic Materials Japan Co Ltd
Priority to US12/810,028 priority patent/US20100279235A1/en
Priority to CN2008801225113A priority patent/CN101910946B/zh
Priority to PCT/JP2008/072681 priority patent/WO2009081773A1/ja
Priority to KR1020107015937A priority patent/KR20100103833A/ko
Priority to MYPI20102599 priority patent/MY153129A/en
Priority to EP08863406.8A priority patent/EP2233978B1/en
Priority to TW097150659A priority patent/TWI505035B/zh
Publication of JP2009157080A publication Critical patent/JP2009157080A/ja
Publication of JP2009157080A5 publication Critical patent/JP2009157080A5/ja
Application granted granted Critical
Publication of JP4786636B2 publication Critical patent/JP4786636B2/ja
Expired - Fee Related legal-status Critical Current
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
    • C08F216/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
    • C08F216/04—Acyclic compounds
    • C08F216/06—Polyvinyl alcohol ; Vinyl alcohol
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/04—Acids; Metal salts or ammonium salts thereof
    • C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1818—C13or longer chain (meth)acrylate, e.g. stearyl (meth)acrylate

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Paints Or Removers (AREA)
JP2007334891A 2007-12-26 2007-12-26 反射防止膜形成用組成物およびそれを用いたパターン形成方法 Expired - Fee Related JP4786636B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2007334891A JP4786636B2 (ja) 2007-12-26 2007-12-26 反射防止膜形成用組成物およびそれを用いたパターン形成方法
CN2008801225113A CN101910946B (zh) 2007-12-26 2008-12-12 用于形成抗反射膜的组合物以及使用该组合物的图案形成方法
PCT/JP2008/072681 WO2009081773A1 (ja) 2007-12-26 2008-12-12 反射防止膜形成用組成物およびそれを用いたパターン形成方法
KR1020107015937A KR20100103833A (ko) 2007-12-26 2008-12-12 반사 방지막 형성용 조성물 및 이를 사용한 패턴 형성 방법
US12/810,028 US20100279235A1 (en) 2007-12-26 2008-12-12 Composition for formation of top anti-reflective film, and pattern formation method using the composition
MYPI20102599 MY153129A (en) 2007-12-26 2008-12-12 Composition for formation of antireflective film, and pattern formation method using the composition
EP08863406.8A EP2233978B1 (en) 2007-12-26 2008-12-12 Composition for formation of anti-reflective film, and pattern formation method using the composition
TW097150659A TWI505035B (zh) 2007-12-26 2008-12-25 抗反射膜形成用組成物及使用其之圖案形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007334891A JP4786636B2 (ja) 2007-12-26 2007-12-26 反射防止膜形成用組成物およびそれを用いたパターン形成方法

Publications (3)

Publication Number Publication Date
JP2009157080A JP2009157080A (ja) 2009-07-16
JP2009157080A5 JP2009157080A5 (enExample) 2010-09-16
JP4786636B2 true JP4786636B2 (ja) 2011-10-05

Family

ID=40801079

Family Applications (1)

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JP2007334891A Expired - Fee Related JP4786636B2 (ja) 2007-12-26 2007-12-26 反射防止膜形成用組成物およびそれを用いたパターン形成方法

Country Status (8)

Country Link
US (1) US20100279235A1 (enExample)
EP (1) EP2233978B1 (enExample)
JP (1) JP4786636B2 (enExample)
KR (1) KR20100103833A (enExample)
CN (1) CN101910946B (enExample)
MY (1) MY153129A (enExample)
TW (1) TWI505035B (enExample)
WO (1) WO2009081773A1 (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8153351B2 (en) * 2008-10-21 2012-04-10 Advanced Micro Devices, Inc. Methods for performing photolithography using BARCs having graded optical properties
JP5697523B2 (ja) * 2011-04-12 2015-04-08 メルクパフォーマンスマテリアルズＩｐ合同会社 上面反射防止膜形成用組成物およびそれを用いたパターン形成方法
JP2013254109A (ja) * 2012-06-07 2013-12-19 Az Electronic Materials Mfg Co Ltd 上層膜形成用組成物およびそれを用いたレジストパターン形成方法
US9804493B2 (en) 2013-11-22 2017-10-31 Samsung Electronics Co., Ltd. Composition for forming topcoat layer and resist pattern formation method employing the same
JP6445760B2 (ja) * 2013-11-22 2018-12-26 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 上層膜形成用組成物およびそれを用いたレジストパターン形成方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5180655A (en) * 1988-10-28 1993-01-19 Hewlett-Packard Company Chemical compositions for improving photolithographic performance
JP3334304B2 (ja) 1993-11-30 2002-10-15 ソニー株式会社 半導体装置の製造方法
JP3284056B2 (ja) * 1995-09-12 2002-05-20 株式会社東芝 基板処理装置及びパターン形成方法
US6190839B1 (en) * 1998-01-15 2001-02-20 Shipley Company, L.L.C. High conformality antireflective coating compositions
KR100687850B1 (ko) * 2000-06-30 2007-02-27 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
AU2001292783A1 (en) * 2000-09-19 2002-04-02 Shipley Company, L.L.C. Antireflective composition
US7238462B2 (en) * 2002-11-27 2007-07-03 Tokyo Ohka Kogyo Co., Ltd. Undercoating material for wiring, embedded material, and wiring formation method
JP4421566B2 (ja) * 2005-12-26 2010-02-24 チェイル インダストリーズ インコーポレイテッド フォトレジスト下層膜用ハードマスク組成物及びこれを利用した半導体集積回路デバイスの製造方法
KR100713231B1 (ko) * 2005-12-26 2007-05-02 제일모직주식회사 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법
EP1806621A1 (en) * 2006-01-08 2007-07-11 Rohm and Haas Electronic Materials LLC Coating compositions for photoresists
US7919222B2 (en) * 2006-01-29 2011-04-05 Rohm And Haas Electronics Materials Llc Coating compositions for use with an overcoated photoresist
EP1845416A3 (en) * 2006-04-11 2009-05-20 Rohm and Haas Electronic Materials, L.L.C. Coating compositions for photolithography
JP4727567B2 (ja) * 2006-12-27 2011-07-20 Ａｚエレクトロニックマテリアルズ株式会社 反射防止膜形成用組成物およびそれを用いたパターン形成方法

Also Published As

Publication number Publication date
EP2233978A1 (en) 2010-09-29
WO2009081773A1 (ja) 2009-07-02
MY153129A (en) 2014-12-31
EP2233978B1 (en) 2018-11-28
CN101910946A (zh) 2010-12-08
CN101910946B (zh) 2013-05-08
KR20100103833A (ko) 2010-09-28
TWI505035B (zh) 2015-10-21
US20100279235A1 (en) 2010-11-04
EP2233978A4 (en) 2011-10-19
EP2233978A8 (en) 2010-11-03
TW200937129A (en) 2009-09-01
JP2009157080A (ja) 2009-07-16

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