TWI505035B - 抗反射膜形成用組成物及使用其之圖案形成方法 - Google Patents
抗反射膜形成用組成物及使用其之圖案形成方法 Download PDFInfo
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- TWI505035B TWI505035B TW097150659A TW97150659A TWI505035B TW I505035 B TWI505035 B TW I505035B TW 097150659 A TW097150659 A TW 097150659A TW 97150659 A TW97150659 A TW 97150659A TW I505035 B TWI505035 B TW I505035B
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Classifications
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
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- C08F216/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
- C08F216/04—Acyclic compounds
- C08F216/06—Polyvinyl alcohol ; Vinyl alcohol
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- C—CHEMISTRY; METALLURGY
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- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/04—Acids; Metal salts or ammonium salts thereof
- C08F220/06—Acrylic acid; Methacrylic acid; Metal salts or ammonium salts thereof
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
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- G—PHYSICS
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/12—Esters of monohydric alcohols or phenols
- C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
- C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
- C08F220/1818—C13or longer chain (meth)acrylate, e.g. stearyl (meth)acrylate
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Polymers & Plastics (AREA)
- Medicinal Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Paints Or Removers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007334891A JP4786636B2 (ja) | 2007-12-26 | 2007-12-26 | 反射防止膜形成用組成物およびそれを用いたパターン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200937129A TW200937129A (en) | 2009-09-01 |
| TWI505035B true TWI505035B (zh) | 2015-10-21 |
Family
ID=40801079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097150659A TWI505035B (zh) | 2007-12-26 | 2008-12-25 | 抗反射膜形成用組成物及使用其之圖案形成方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20100279235A1 (enExample) |
| EP (1) | EP2233978B1 (enExample) |
| JP (1) | JP4786636B2 (enExample) |
| KR (1) | KR20100103833A (enExample) |
| CN (1) | CN101910946B (enExample) |
| MY (1) | MY153129A (enExample) |
| TW (1) | TWI505035B (enExample) |
| WO (1) | WO2009081773A1 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8153351B2 (en) * | 2008-10-21 | 2012-04-10 | Advanced Micro Devices, Inc. | Methods for performing photolithography using BARCs having graded optical properties |
| JP5697523B2 (ja) * | 2011-04-12 | 2015-04-08 | メルクパフォーマンスマテリアルズＩｐ合同会社 | 上面反射防止膜形成用組成物およびそれを用いたパターン形成方法 |
| JP2013254109A (ja) * | 2012-06-07 | 2013-12-19 | Az Electronic Materials Mfg Co Ltd | 上層膜形成用組成物およびそれを用いたレジストパターン形成方法 |
| US9804493B2 (en) | 2013-11-22 | 2017-10-31 | Samsung Electronics Co., Ltd. | Composition for forming topcoat layer and resist pattern formation method employing the same |
| JP6445760B2 (ja) * | 2013-11-22 | 2018-12-26 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | 上層膜形成用組成物およびそれを用いたレジストパターン形成方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1974697A (zh) * | 2000-06-30 | 2007-06-06 | 海力士半导体有限公司 | 有机抗反射涂料聚合物,抗反射涂料组合物及其制备方法 |
| TW200725186A (en) * | 2005-12-26 | 2007-07-01 | Cheil Ind Inc | Hardmask compositions for resist underlayer film and method for producing semiconductor integrated circuit device using the same |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5180655A (en) * | 1988-10-28 | 1993-01-19 | Hewlett-Packard Company | Chemical compositions for improving photolithographic performance |
| JP3334304B2 (ja) | 1993-11-30 | 2002-10-15 | ソニー株式会社 | 半導体装置の製造方法 |
| JP3284056B2 (ja) * | 1995-09-12 | 2002-05-20 | 株式会社東芝 | 基板処理装置及びパターン形成方法 |
| US6190839B1 (en) * | 1998-01-15 | 2001-02-20 | Shipley Company, L.L.C. | High conformality antireflective coating compositions |
| AU2001292783A1 (en) * | 2000-09-19 | 2002-04-02 | Shipley Company, L.L.C. | Antireflective composition |
| US7238462B2 (en) * | 2002-11-27 | 2007-07-03 | Tokyo Ohka Kogyo Co., Ltd. | Undercoating material for wiring, embedded material, and wiring formation method |
| KR100713231B1 (ko) * | 2005-12-26 | 2007-05-02 | 제일모직주식회사 | 레지스트 하층막용 하드마스크 조성물 및 이를 이용한반도체 집적회로 디바이스의 제조방법 |
| EP1806621A1 (en) * | 2006-01-08 | 2007-07-11 | Rohm and Haas Electronic Materials LLC | Coating compositions for photoresists |
| US7919222B2 (en) * | 2006-01-29 | 2011-04-05 | Rohm And Haas Electronics Materials Llc | Coating compositions for use with an overcoated photoresist |
| EP1845416A3 (en) * | 2006-04-11 | 2009-05-20 | Rohm and Haas Electronic Materials, L.L.C. | Coating compositions for photolithography |
| JP4727567B2 (ja) * | 2006-12-27 | 2011-07-20 | Ａｚエレクトロニックマテリアルズ株式会社 | 反射防止膜形成用組成物およびそれを用いたパターン形成方法 |
-
2007
- 2007-12-26 JP JP2007334891A patent/JP4786636B2/ja not_active Expired - Fee Related
-
2008
- 2008-12-12 CN CN2008801225113A patent/CN101910946B/zh active Active
- 2008-12-12 WO PCT/JP2008/072681 patent/WO2009081773A1/ja not_active Ceased
- 2008-12-12 KR KR1020107015937A patent/KR20100103833A/ko not_active Ceased
- 2008-12-12 EP EP08863406.8A patent/EP2233978B1/en not_active Not-in-force
- 2008-12-12 MY MYPI20102599 patent/MY153129A/en unknown
- 2008-12-12 US US12/810,028 patent/US20100279235A1/en not_active Abandoned
- 2008-12-25 TW TW097150659A patent/TWI505035B/zh active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1974697A (zh) * | 2000-06-30 | 2007-06-06 | 海力士半导体有限公司 | 有机抗反射涂料聚合物,抗反射涂料组合物及其制备方法 |
| TW200725186A (en) * | 2005-12-26 | 2007-07-01 | Cheil Ind Inc | Hardmask compositions for resist underlayer film and method for producing semiconductor integrated circuit device using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| EP2233978A1 (en) | 2010-09-29 |
| WO2009081773A1 (ja) | 2009-07-02 |
| MY153129A (en) | 2014-12-31 |
| EP2233978B1 (en) | 2018-11-28 |
| CN101910946A (zh) | 2010-12-08 |
| CN101910946B (zh) | 2013-05-08 |
| JP4786636B2 (ja) | 2011-10-05 |
| KR20100103833A (ko) | 2010-09-28 |
| US20100279235A1 (en) | 2010-11-04 |
| EP2233978A4 (en) | 2011-10-19 |
| EP2233978A8 (en) | 2010-11-03 |
| TW200937129A (en) | 2009-09-01 |
| JP2009157080A (ja) | 2009-07-16 |
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