WO2009081523A1 - 単結晶製造装置および製造方法 - Google Patents
単結晶製造装置および製造方法 Download PDFInfo
- Publication number
- WO2009081523A1 WO2009081523A1 PCT/JP2008/003542 JP2008003542W WO2009081523A1 WO 2009081523 A1 WO2009081523 A1 WO 2009081523A1 JP 2008003542 W JP2008003542 W JP 2008003542W WO 2009081523 A1 WO2009081523 A1 WO 2009081523A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- quartz tube
- single crystal
- quartz
- gold
- raw material
- Prior art date
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
- C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Definitions
- the present invention relates to a single crystal manufacturing apparatus and manufacturing method for manufacturing various crystal materials such as semiconductors, dielectrics, and magnetic materials by the Czochralski method (hereinafter referred to as “CZ method”).
- a single crystal manufacturing apparatus used for manufacturing single crystals of semiconductors, dielectrics, magnetic materials, etc. by the CZ method includes a crucible that is driven to rotate around its center, and a heater that is arranged around the crucible.
- the raw material polycrystal charged in the crucible is heated by a heater to obtain a polycrystalline melt, and the seed attached to the lower end of the upper shaft of the wire, etc.
- This is an apparatus for growing a predetermined single crystal under a seed crystal by immersing the crystal and pulling it up at a predetermined speed while rotating the upper shaft.
- FIG. 4 shows an example of a schematic cross-sectional view of a conventional single crystal production apparatus 13 by the CZ method.
- reference numeral 1 denotes a crucible that accommodates the raw material polycrystal 2, and a cylindrical heater 3 made of, for example, graphite is disposed on the outer periphery thereof, and a bottom heat insulating material 4 is disposed below the crucible 1 as necessary.
- a cylindrical heat insulating material 5 is disposed outside the heater 3 as necessary, and these are accommodated in the lower chamber 6 and the upper chamber 7.
- the upper chamber 7 is provided with a conduction path 8 for pulling up the single crystal.
- the raw material polycrystal 2 is melted by a resistance heater 3 made of, for example, graphite arranged around the crucible 1.
- the problem is that the melting time becomes longer in proportion to the increase in the charge amount (melting amount) accompanying the increase in the crystal diameter.
- the heat generated in the heater 3 is dissipated to the upper part through the upper chamber 7 and the single crystal conduction path 8, and at the same time, the heat is dissipated from the molten raw material surface and the crucible through the upper chamber 7 and the conduction path 8. The time required for melting was lengthened.
- a single crystal manufacturing apparatus capable of shortening the melting time of the raw material polycrystal by providing an auxiliary heating device using a lamp or a laser.
- a heat shield plate is disposed on the crucible when the raw material polycrystal is melted (see Japanese Patent Laid-Open No. 10-158091), or the raw material polycrystal is melted.
- a single crystal manufacturing apparatus in which a disc-shaped reflector made of a high melting point material such as Mo, W, or Si is disposed on the upper part of the crucible (see Japanese Patent Laid-Open No. 2001-213691).
- the present invention has been made in view of the above problems, and by reducing the melting time of the polycrystal and shortening the cycle time, the production cost can be reduced and the power cost can be reduced.
- An object is to provide a crystal manufacturing apparatus and a manufacturing method.
- At least a chamber, a crucible in the chamber, a heater disposed around the crucible, a pulling mechanism for pulling up the seed crystal, the seed crystal and the grown single crystal A single crystal manufacturing apparatus for manufacturing a single crystal by melting the raw material polycrystal contained in the crucible with the heater, bringing the seed crystal into contact with the molten polycrystal and pulling it up, A cylindrical quartz tube having a curved bottom portion and a dome-shaped quartz plate are provided, and the quartz tube is arranged such that the curved bottom portion faces the crucible from the upper portion of the chamber through the conduction path.
- the quartz plate is arranged so as to surround the quartz tube, and the quartz tube is a reflective structure in which at least the bottom part reflects heat rays,
- Serial quartz plate provides a single crystal manufacturing apparatus which is a reflecting structure for reflecting heat rays toward the crucible.
- a cylindrical quartz tube having a reflection structure that reflects the heat rays to the crucible with the bottom portion being curved is disposed so as to face the crucible top, and A dome-shaped quartz plate having a reflective structure for reflecting heat rays is arranged around the quartz tube.
- the total amount of heat applied to the raw material polycrystal can be increased as compared with the conventional case to promote melting, and the time required for melting can be shortened. Therefore, since the time required for manufacturing a single crystal can be shortened, productivity can be improved and production cost can be reduced.
- any of gold plating, gold vapor deposition, and gold coating is applied as the reflection structure of the quartz tube and the quartz plate.
- gold having excellent heat ray reflectivity is applied by either plating, vapor deposition, or coating, thereby improving the reflection efficiency of the heat ray from the heater.
- the melting time of the raw material polycrystal can be further shortened.
- the reflection structure of the quartz plate is any one of gold plating, gold vapor deposition, and gold coating
- it is preferably a sandwich structure in which the gold plating, gold vapor deposition, and gold coating are covered with quartz.
- the structure in which gold plating, gold deposition, and gold coating are sandwiched by quartz can prevent the thin gold film from being peeled off when the raw material polycrystalline is melted or the single crystal is manufactured, and impurities are mixed in. Can be prevented. Further, it is possible to prevent the gold thin film from being peeled off during the cleaning of the quartz plate.
- the quartz tube has a halogen lamp inside, and the halogen lamp is arranged so as to have a condensing reflection structure for heating the raw material polycrystal.
- the halogen lamp is arranged so as to have a light reflecting structure for heating the polycrystalline raw material as an auxiliary to the heater in the quartz tube. Therefore, the time required for melting can be further shortened.
- the condensing and reflecting structure of the halogen lamp may be provided with a lens.
- a lens the focus of the heat ray emitted from the halogen lamp can be easily focused on the raw material polycrystal, thereby further promoting the melting of the raw material polycrystal.
- the quartz tube and / or the quartz plate may be provided with a water cooling mechanism and / or an air cooling mechanism for heat removal.
- a cooling mechanism for the quartz tube and the quartz plate the heat resistance of the quartz tube and the quartz plate can be improved. Therefore, it can be used for a long period of time, and the cost for the quartz tube and the quartz plate can be reduced.
- the quartz tube can be moved up and down. If the quartz tube can be moved up and down, the heat rays reflected by the reflecting structure of the quartz tube can be easily focused on the raw material polycrystal.
- a single crystal is grown by heating the raw material polycrystal contained in the crucible with a heater and melting it by the Czochralski method and bringing the seed crystal into contact with the melt and then pulling it up.
- the crystal manufacturing method when the raw material polycrystal is heated and melted, at least the bottom has a reflective structure that reflects heat rays, and the bottom of the cylindrical quartz tube having a curved bottom is connected to the conduction path from the top of the chamber.
- the quartz tube is disposed so as to face the crucible through, and a dome-shaped quartz plate having a reflection structure that reflects heat rays toward the crucible is disposed so as to surround the quartz tube, and the raw material polycrystal is disposed.
- the quartz tube is taken out of the chamber, and then the seed crystal is brought into contact with the raw material polycrystalline melt to pull up the single crystal. It provides a method for producing a single crystal, characterized by manufacture.
- the quartz tube is arranged so that the bottom of the cylindrical quartz tube having a curved surface at the bottom and reflecting the heat rays to the crucible faces the top of the crucible through the conduction furnace, and the reflection structure that reflects the heat rays to the crucible
- the dome-shaped quartz plate is arranged around the quartz tube to melt the raw material polycrystal, and then the quartz tube arranged in the conduction path is removed from the chamber, and then a single crystal is manufactured.
- the total amount of heat applied to the raw material polycrystal is increased compared to the conventional case. Therefore, the time required for melting can be shortened, and thus the production time of the single crystal can be shortened, and the improvement of productivity and the reduction of production cost can be achieved.
- any of gold plating, gold vapor deposition, and gold coating is applied as the reflection structure of the quartz tube and the quartz plate.
- the efficiency of heat ray reflection from a crucible or the like can be increased by using a quartz tube and a quartz plate that are plated, vapor-deposited or coated with gold having excellent heat ray reflectivity.
- the melting time of the raw material polycrystal can be further shortened.
- the quartz plate when used as a reflection structure with gold plating, gold deposition, or gold coating, it is preferable to use a sandwich structure in which the gold plating, gold deposition, or gold coating is covered with quartz. .
- a sandwich structure in which the gold plating, gold deposition, or gold coating is covered with quartz.
- a quartz tube provided with a halogen lamp arranged so as to have a condensing reflection structure for heating the raw material polycrystal.
- a quartz tube provided with a halogen lamp arranged so as to have a condensing reflection structure for heating the raw material polycrystal.
- a condensing structure having a lens can be used as the condensing structure of the halogen lamp. In this way, by using a lens provided with a lens, it is possible to easily focus the heat rays emitted from the halogen lamp on the raw material polycrystal, thereby further promoting the melting of the raw material polycrystal.
- the quartz tube and / or the quartz plate can be melted while being cooled with water and / or air.
- the heat resistance of the quartz tube and the quartz plate can be improved. Therefore, it can be used for a long period of time, and the cost for the quartz tube and the quartz plate can be reduced.
- the quartz tube it is possible to use one that can further focus the hot wire on the raw material polycrystal by moving up and down. If the quartz tube can be moved up and down, the heat rays reflected by the reflecting structure of the quartz tube can be easily focused on the raw material polycrystal.
- the single crystal manufacturing apparatus of the present invention since the heat discarded due to dissipation from the conduction path and the chamber can be used effectively, the melting time of the raw material polycrystal is compared with the conventional one. Therefore, the production time of the single crystal can be shortened, so that the productivity can be improved and the production cost can be reduced.
- the present inventor paid attention to the heat dissipated from the conduction path of the single crystal and the chamber, and intensively studied whether this could be used effectively.
- the present inventor conceived that the melting was promoted by condensing the heat dissipated into the chamber and the conduction path and reflecting it to the raw material polycrystals confiscated in the crucible. Completed.
- FIG. 1 is a schematic cross-sectional view showing an example of a single crystal production apparatus of the present invention.
- reference numeral 1 denotes a crucible for accommodating a raw material polycrystal 2, and a cylindrical heater 3 made of, for example, graphite is disposed on the outer periphery thereof, and bottom insulation is provided below the crucible 1 as necessary. Material 4 is arranged. In addition, a cylindrical heat insulating material 5 is disposed outside the heater 3 as necessary, and these are accommodated in the lower chamber 6 and the upper chamber 7.
- the upper chamber 7 is provided with a conduction path 8 for pulling up the single crystal.
- a cylindrical quartz tube 9a through the conduction path 8 from the upper chamber 7 and a dome-shaped quartz plate 10 are disposed so as to surround the quartz tube 9a.
- the cylindrical quartz tube 9 a has a curved bottom, and has a reflective structure that reflects heat rays toward the raw material polycrystal 2 in the crucible 1.
- the quartz plate 10 has a reflection structure that reflects heat rays toward the raw material polycrystal 2 in the crucible 1.
- the reflection structure of the quartz tube 9a and the quartz plate 10 is such that the quartz faces the surface facing the hot zone where the temperature is high.
- the chamber 7 side has a reflective structure.
- the reflecting structure has a double structure covered with quartz so that the reflecting structure is not exposed in the chamber.
- a quartz quartz tube having a reflective structure that reflects the heat rays to the crucible and a dome-shaped quartz plate that reflects the heat rays to the crucible and quartz at the top of the crucible are curved.
- the raw material polycrystal is melted as a structure arranged around the tube.
- any of gold plating, gold vapor deposition, and gold coating can be applied.
- the reflection structure of the quartz tube and the quartz plate it is possible to increase the reflection efficiency of the heat rays from the heater by performing any of gold plating, gold vapor deposition, and gold coating, Therefore, the melting time of the raw material polycrystal can be further shortened.
- gold plating or the like may be applied to the inner bottom surface or side surface of the quartz tube. In the case of a quartz plate, the surface on the chamber side may be plated with gold. This reflection efficiency is 0.85 in the case of gold plating, and can be sufficiently higher than that of a graphite material or a quartz material, and the time required for melting can be shortened.
- the reflection structure of the quartz plate is any one of gold plating, gold vapor deposition, and gold coating
- a sandwich structure in which the gold plating, gold vapor deposition, and gold coating are covered with quartz can be formed.
- the structure in which gold plating, gold deposition, and gold coating are sandwiched by quartz can prevent the thin gold film from being peeled off when the raw material polycrystalline is melted or the single crystal is manufactured, and impurities are mixed in. Can be prevented. Further, it is possible to prevent the gold thin film from being peeled off during the cleaning of the quartz plate.
- an air cooling mechanism and / or a water cooling mechanism can be provided for removing heat from the quartz tube and / or the quartz plate.
- a cooling mechanism for the quartz tube and the quartz plate the heat resistance of the quartz tube and the quartz plate can be improved. Therefore, even if gold plating or the like is applied, it can be used for a long period of time, and the cost for the quartz tube and the quartz plate can be reduced.
- the quartz tube is more preferably water-cooled and the quartz plate is more preferably air-cooled. Argon gas introduced from the chamber is preferably used for air cooling of the quartz plate.
- the quartz tube can be moved up and down. If the quartz tube can be moved up and down in this way, the heat rays reflected by the reflection structure of the quartz tube can be easily focused on the raw material polycrystal.
- FIG. 2 is a schematic sectional view showing another example of the single crystal manufacturing apparatus of the present invention.
- reference numeral 1 denotes a crucible for accommodating the raw material polycrystal 2.
- a cylindrical heater 3 made of, for example, graphite is disposed on the outer periphery of the crucible, and a bottom portion is provided below the crucible 1 as necessary.
- a heat insulating material 4 is arranged.
- a cylindrical heat insulating material 5 is disposed outside the heater 3 as necessary, and these are accommodated in the lower chamber 6 and the upper chamber 7.
- the upper chamber 7 is provided with a conduction path 8 for pulling up the single crystal, and is the same as in FIG. 1 until the dome-shaped quartz plate 10 is installed.
- the cylindrical quartz tube 9b includes a halogen lamp 11 disposed in the cylinder so as to have a condensing reflection structure.
- the amount of heat applied to the raw material polycrystal can be further increased by arranging the halogen lamp in the quartz tube as a heater to take a condensing reflection structure for heating the raw material polycrystal.
- the time required for melting can be further shortened.
- the bottom of the quartz tube 9b is gold-plated on the inside.
- the halogen lamp is provided in this way, melting of the raw material polycrystal can be further promoted by actively reflecting the heat rays radiated from the crucible by the heat rays radiated from the halogen lamp.
- a lens may be provided as the condensing structure.
- the focus of the heat ray emitted from the halogen lamp can be easily focused on the raw material polycrystal, thereby further promoting the melting of the raw material polycrystal.
- the manufacturing method of the single crystal of this invention is demonstrated with reference to FIG. 1, of course, it is not limited to these.
- the bulk raw material polycrystal 2 is put into the crucible 1 in the chamber of the single crystal manufacturing apparatus 12.
- a cylindrical quartz tube 9 a having a curved surface with at least a bottom portion as a heat ray reflecting structure is installed from the upper chamber 7 through the conduction path 8 so as to face the crucible 1.
- a dome-shaped quartz plate 10 having a reflective structure for reflecting heat rays toward the crucible 1 is installed so as to surround the cylindrical quartz tube 9a.
- the quartz tube 9a is arranged so that the bottom is curved and the cylindrical quartz tube having a reflective structure that reflects heat rays to the crucible passes through the conduction path and faces the crucible upper portion, and at the same time, the reflective structure that reflects the heat rays to the crucible
- the quartz tube By placing a dome-shaped quartz plate around the quartz tube and melting the raw material polycrystal, the heat rays dissipated from the heater and crucible toward the conduction path are dissipated toward the chamber by the quartz tube.
- the amount of heat to the raw material polycrystal can be increased compared to the conventional case, and the time required for melting can be shortened.
- the quartz tube 9a is pulled up from the conduction path 8 and taken out of the chamber. And after that, a single crystal is manufactured by bringing a seed crystal (not shown) into contact with the raw material polycrystal melt and pulling up the seed crystal at a predetermined speed. At this time, it is desirable to manufacture the single crystal while the quartz plate 10 is left in the chamber.
- a seed crystal not shown
- the quartz plate 10 is desirably taken out of the chamber and cleaned after the production of the single crystal is completed. By washing the quartz plate after manufacturing the single crystal, the quartz plate can be kept clean, so that impurities can be prevented from being mixed into the melt and heat reflection efficiency can be kept high. it can.
- the raw material polycrystal can be melted by using a quartz tube and a quartz plate that are provided with any of gold plating, gold vapor deposition, and gold coating as a reflection structure.
- the reflection structure of the quartz tube and the quartz plate is made of any one of gold plating, gold vapor deposition, and gold coating, whereby the reflection efficiency of the heat rays from the heater can be increased, and a large amount of raw materials can be obtained. It is possible to further shorten the melting time of the crystal.
- the reflection structure of the quartz plate when a gold plate, gold vapor deposition, or gold coating is used, a sandwich structure in which the gold plating, gold vapor deposition, or gold coating is covered with quartz can be used.
- a sandwich structure in which the gold plating, gold vapor deposition, or gold coating is covered with quartz can be used.
- quartz by using a structure in which gold plating, gold vapor deposition, and gold coating are sandwiched by quartz, it is possible to prevent the thin gold film from being peeled when melting the raw material polycrystal or manufacturing the single crystal, Impurities can be prevented from being mixed. Further, it is possible to prevent the gold thin film from being peeled off during the cleaning of the quartz plate.
- a quartz tube having a halogen lamp arranged so as to have a condensing reflection structure so as to heat the raw material polycrystal in the cylinder can be used.
- the time required for melting can be further shortened.
- a condensing structure having a lens can be used as the condensing structure of the halogen lamp. In this way, by using a lens provided with a lens, it is possible to easily focus the heat rays emitted from the halogen lamp on the raw material polycrystal, thereby further promoting the melting of the raw material polycrystal.
- the raw material polycrystal can be melted while cooling the quartz plate and / or the quartz plate with water and / or air to remove heat.
- the heat resistance of the quartz tube and the quartz plate can be improved. Therefore, it can be used for a long period of time, and the cost for the quartz tube and the quartz plate can be reduced.
- Argon gas introduced from the chamber is preferably used for air cooling of the quartz plate.
- a quartz tube that can move further up and down can be used. If the quartz tube can be moved up and down, the heat rays reflected by the reflecting structure of the quartz tube can be easily focused on the raw material polycrystal.
- the heat rays dissipated from the heater and the crucible toward the conduction path are dissipated by the cylindrical quartz tube and toward the chamber.
- a quartz plate to collect and reflect the light toward the raw material polycrystal, it is possible to effectively use the heat that has been discarded. Therefore, the total amount of heat applied to the raw material polycrystal can be increased as compared with the conventional case to promote melting, and the time required for melting can be shortened. Therefore, since the time required for manufacturing a single crystal can be shortened, productivity can be improved and production cost can be reduced.
- the raw material can be melted in a short time without increasing the electric power, the deterioration of the crucible made of a quartz crucible or the like can be suppressed.
- the secondary effect is that the occurrence of slip dislocation is suppressed and the single crystallization rate is improved.
- Example 1 A silicon single crystal was manufactured using a single crystal manufacturing apparatus as shown in FIG. A crucible having a diameter of 32 inches (80 cm) was used, and 300 kg of polycrystalline silicon raw material was charged in the crucible. The power applied to the raw material polycrystal and the crucible from the heater was set to 200 kW. Then, a quartz tube plated with gold on the bottom and side faces is arranged so as to face the crucible through the conduction path, and a quartz plate plated with gold so as to reflect heat rays toward the crucible is arranged so as to surround the quartz tube, Polycrystalline silicon was melted.
- Example 1 A single crystal manufacturing apparatus as shown in FIG. 4 is used to manufacture a silicon single crystal in the same manner as in Example 1 without installing a quartz tube and a quartz plate in the chamber. The time taken was measured. When the polycrystalline silicon was melted without condensing and reflecting the heat rays dissipated in the conduction path and chamber without installing the quartz tube and the quartz plate, the melting time was 15 hours. Compared to Example 1, it took a longer time to melt.
- Example 2 Using the quartz tube 9b of the single crystal production apparatus 12 ′ as shown in FIG. 2 equipped with a halogen lamp as shown in FIG. 3, the raw material polycrystal is melted in the same manner as in Example 1, The time taken for melting was measured in the same manner as in Example 1.
- this quartz tube nine 5 kW halogen lamps, a total of 45 kW, were installed and condensed by a quartz lens. The thermal efficiency including heat other than the light condensing rate was 58%, of which 20 kW was calculated to contribute to melting.
- the time required for melting the polycrystalline silicon was 10 hours.
- the present invention is not limited to the above embodiment.
- the above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
また上部チャンバー7には、単結晶を引き上げる際の導通路8が設けられている。
また、ヒーター3で発生した熱が、上部チャンバー7や単結晶の導通路8を通して上部に散逸され、同時に溶融した原料表面やルツボからも熱が上部チャンバー7や導通路8を通して散逸されるため、溶融にかかる時間を長くしていた。
例えば、大直径のシリコン単結晶製造装置では、多結晶原料の溶融に200~300kW時の電力を必要とし、そのほぼ全熱量は水冷式のチャンバー壁から外部に排出されてしまうため、ホットゾーン内では適切な温度を維持しながら、壁面に消費される熱量を抑制する必要がある。
その他には、チャンバー上部への熱放出を防止するべく、原料多結晶を融解させる際にルツボ上に遮熱板を配置したり(特開平10-158091号公報参照)、原料多結晶を融解させる際に、ルツボ上部に、MoやW、Si等の高融点材料からなる円板状の反射材を配置する単結晶製造装置が開示されている(特開2001-213691号公報参照)。
これによって、ヒーターやルツボから導通路に向けて散逸されていた熱線を円筒状の石英管によって、チャンバー方向に向かって散逸される熱線を石英板によって、集光して原料多結晶に向けて反射させることによって、従来捨てていた熱を有効に利用することができるようになる。従って、原料多結晶へ加える熱量の総量を従来に比べて増加させて溶融を促進させることができ、溶融にかかる時間を短縮することができる。よって単結晶の製造にかかる時間を短縮することができるため、生産性の向上および生産コストの低減を達成することができる。
このように、石英管および石英板の反射構造として、熱線の反射率に優れた金が、メッキ、蒸着またはコーティングのいずれかで施されたものとすることによって、ヒーターからの熱線の反射効率を高いものとすることができ、原料多結晶の溶融時間の更なる短縮を図ることができる。
このように、金メッキ、金蒸着、金コーティングを石英によってサンドイッチした構造とすることによって、原料多結晶の溶融や単結晶の製造の際に金薄膜がはがれることを防止することができ、不純物の混入を防止することができる。また石英板の洗浄の際に金薄膜がはがれることも防止することができる。
このように、石英管内に、ヒーターの補助として、ハロゲンランプを原料多結晶を加熱するための集光反射構造をとるように配置することによって、原料多結晶へ加える熱量を増加させることができ、よって溶融にかかる時間を更に短縮することができる。
このように、レンズを備えることによって、容易にハロゲンランプから放出された熱線の焦点を原料多結晶に合わせることができ、よって原料多結晶の溶融をより促進させることができる。
このように、石英管および石英板の冷却機構を備えることによって、該石英管および該石英板の耐熱性を向上させることができる。よって長期間使用することができるようになり、石英管および石英板に掛かるコストの低減を図ることができる。
石英管を上下に移動させることができれば、石英管の反射構造によって反射させる熱線の焦点を原料多結晶に容易に合わせることができる。
これによって、ヒーターやルツボから導通路に向けて散逸される熱線を石英管によって、チャンバー方向に向かって散逸されていた熱線を石英板によって、集光して原料多結晶に向けて反射させることによって、原料多結晶へ加える熱量の総量を従来に比べて増加させる。よって、溶融にかかる時間を短縮させることができ、よって単結晶の製造時間を短縮させることができ、生産性の向上および生産コストの低減を達成することができる。
このように、石英管および石英板に、熱線の反射率に優れた金がメッキ、蒸着またはコーティングのいずれかを施したものを用いることによって、ルツボ等からの熱線の反射効率を高くすることができ、原料多結晶の溶融時間の更なる短縮を図ることができる。
このように、金メッキ、金蒸着、金コーティングを石英によってサンドイッチした構造としたものを用いることによって、原料多結晶の溶融や単結晶の製造の際に金薄膜がはがれることを防止することができ、よって不純物の混入を防止することができる。また石英板の洗浄の際に金薄膜がはがれることも防止することができる。
このように、石英管内に、ハロゲンランプを原料多結晶を加熱するための集光反射構造をとるように配置したものを用いて、ヒーターの補助とすることによって、原料多結晶を溶融させる際に原料多結晶へ加える熱量を増加させることができ、よって溶融にかかる時間の更なる短縮を図ることができる。
このように、レンズを備えたものを用いることによって、容易にハロゲンランプから放出された熱線の焦点を原料多結晶に合わせることができ、よって原料多結晶の溶融をより促進させることができる。
このように、石英管および石英板の冷却機構を備えることによって、該石英管および該石英板の耐熱性を向上させることができる。よって長期間使用することができるようになり、石英管および石英板に掛かるコストの低減を図ることができる。
石英管を上下に移動させることができれば、石英管の反射構造によって反射させる熱線の焦点を原料多結晶に容易に合わせることができる。
前述のように、多結晶の溶融時間を短縮してサイクルタイムを短縮することによって、生産性の向上および生産コストの低減を図ることのできる単結晶製造装置と製造方法の開発が待たれていた。
図1は、本発明の単結晶製造装置の一例を示した概略断面図である。
ここで、本発明においては、上部チャンバー7より導通路8を通して円筒状の石英管9aと、石英管9aを取り囲むようにドーム形状の石英板10が配置されている。
ここで、石英管9aや石英板10の反射構造は、高温になるホットゾーンに臨む面には石英が臨むようになっており、石英管9aでは円筒状の管内内側が、石英板10では上部チャンバー7側が反射構造となるようになっている。ただし反射構造がチャンバー内に露出しないように、反射構造の部分は石英で覆った二重構造とするのが好ましい。
このような構造をとることによって、ヒーターから導通路やチャンバー方向に向かって散逸されていた熱線を集光して原料多結晶に向けて反射させることができ、熱を有効利用することができる。従って、原料多結晶への熱量を従来に比べて増加させることができ、溶融にかかる時間を短縮させることができ、ひいては生産性の向上および生産コストの低減を達成することができる。
このように、石英管および石英板の反射構造として、金メッキ、金蒸着、金コーティングのいずれかが施されたものとすることによって、ヒーターからの熱線の反射効率を高いものとすることができ、よって、原料多結晶の溶融時間の更なる短縮を図ることができる。具体的には、石英管の内側底面や側面に金メッキ等を施せばよい。また、石英板であれば、チャンバー側の面に金メッキ等を施せばよい。
この反射効率は、金メッキの場合0.85であり、黒鉛材や石英材に比べて十分に高いものとすることができ、溶融に必要な時間を短縮させることができる。
このように、金メッキ、金蒸着、金コーティングを石英によってサンドイッチした構造とすることによって、原料多結晶の溶融や単結晶の製造の際に金薄膜がはがれることを防止することができ、不純物の混入を防止することができる。また石英板の洗浄の際に金薄膜がはがれることも防止することができる。
このように、石英管および石英板の冷却機構を備えることによって、該石英管および該石英板の耐熱性を向上させることができる。よって例え、金メッキ等が施されていたとしても、長期間使用することができるようになり、石英管および石英板に掛かるコストの低減を図ることができる。
石英管は水冷、石英板は空冷がより好ましい。石英板の空冷にはチャンバーから導入したアルゴンガスを用いるのが好適である。
このように石英管を上下に移動させることができれば、石英管の反射構造によって反射させる熱線の焦点を原料多結晶に容易に合わせることができる。
図2の単結晶製造装置12’では、1は原料多結晶2を収容するルツボで、その外周には例えばグラファイトからなる円筒状のヒーター3が配置され、必要に応じて該ルツボ1下方に底部断熱材4が配置される。また、ヒーター3の外側には、必要に応じて円筒状の断熱材5が配置され、これらが下部チャンバー6や上部チャンバー7内に収容されている。また上部チャンバー7には、単結晶を引き上げる際の導通路8が設けられており、ドーム形状の石英板10が設置されているところまでは、図1と同じである。
このように、石英管内に、ヒーターの補助として、ハロゲンランプを原料多結晶を加熱するための集光反射構造をとるように配置することによって、原料多結晶へ加える熱量を更に増加させることができ、これにより、溶融にかかる時間の更なる短縮を図ることができる。この場合も、石英管9bの底部には、内側に金メッキ等が施されていた方がよい。
またこのようにハロゲンランプを備えたときには、該ハロゲンランプより放射される熱線によって、ルツボから散逸される熱線も積極的に反射させることによってより原料多結晶の溶融を促進することができる。
このように、レンズを備えることによって、容易にハロゲンランプから放出された熱線の焦点を原料多結晶に合わせることができ、よって原料多結晶の溶融をより促進させることができる。
このとき、石英管の側面にも金メッキ等を施すことがより好ましい。
まず、単結晶製造装置12のチャンバー内のルツボ1に塊状の原料多結晶2を投入する。
このとき、上部チャンバー7より導通路8を通して、少なくとも底部を熱線反射構造として曲面状とした円筒状の石英管9aをルツボ1上に臨むように、設置する。
また、同時にルツボ1に向けて熱線を反射する反射構造としたドーム形状の石英板10を、円筒状の石英管9aを取り囲むように設置する。
そしてその後に、種結晶(不図示)を原料多結晶の融液に接触させ、所定の速度で種結晶を引き上げることによって単結晶を製造する。
このとき、石英板10は、チャンバー内に残したままの状態で単結晶の製造を行うことが望ましい。このように石英板10を単結晶製造中もチャンバー内に残すことによって、チャンバー方向に向かって散逸される熱線を集光反射させることによって、ヒーターや融液から散逸される熱量を低減させることができるため、結晶育成中のヒーターパワーを抑制することができる。従って、電力コストを一層改善できる。
単結晶製造後に石英板を洗浄することによって、石英板を清浄な状態に保つことができるため、融液へ不純物が混入することを抑制することができるし、熱の反射効率も高く保つことができる。
このように、石英管および石英板の反射構造として、金メッキ、金蒸着、金コーティングのいずれかが施されたものを用いることによって、ヒーターからの熱線の反射効率を高くすることができ、原料多結晶の溶融時間の更なる短縮を図ることができる。
このように、金メッキ、金蒸着、金コーティングを石英によってサンドイッチした構造としたものを用いることによって、原料多結晶の溶融や単結晶の製造の際に金薄膜がはがれることを防止することができ、不純物の混入を防止することができる。また石英板の洗浄の際に金薄膜がはがれることも防止することができる。
このように、石英管内に、ハロゲンランプを原料多結晶を加熱するための集光反射構造をとるように配置したものを用いることによって、原料多結晶を溶融させる際に原料多結晶へ加える熱量を増加させることができ、溶融にかかる時間の更なる短縮を図ることができる。
このように、レンズを備えたものを用いることによって、容易にハロゲンランプから放出された熱線の焦点を原料多結晶に合わせることができ、よって原料多結晶の溶融をより促進させることができる。
このように、石英管および石英板の冷却機構を備えることによって、該石英管および該石英板の耐熱性を向上させることができる。よって長期間使用することができるようになり、石英管および石英板に掛かるコストの低減を図ることができる。
ここで、石英管の冷却として水冷、石英板の冷却として空冷を用いることがより好ましい。石英板の空冷にはチャンバーより導入したアルゴンガスを用いることが好適である。
石英管を上下に移動させることができれば、石英管の反射構造によって反射させる熱線の焦点を原料多結晶に容易に合わせることができる。
(実施例1)
図1に示したような単結晶製造装置を用いて、シリコン単結晶の製造を行った。ルツボは直径32インチ(80cm)のものを用い、ルツボに多結晶シリコン原料を300kgチャージした。ヒーターから原料多結晶やルツボに加えられるパワーを200kWとした。
そして底部および側面に金メッキを施した石英管を導通路を通してルツボに臨むように配置し、ルツボに向けて熱線を反射するように金メッキを施した石英板を石英管を取り囲むように配置して、多結晶シリコンの溶融を行った。
図4に示したような単結晶製造装置を用いて、石英管および石英板をチャンバー内に設置せずに実施例1と同様にシリコン単結晶の製造を行い、同様に多結晶シリコンの溶融にかかった時間を測定した。
石英管および石英板を設置せずに、導通路やチャンバーに散逸される熱線を集光反射をしないで多結晶シリコンを溶融したところ、溶融時間は15時間であり、集光反射を行った実施例1に比べて溶融に長い時間を要した。
図2に示したような単結晶製造装置12’の石英管9bに、図3に示したようなハロゲンランプを備えたものを用いて、実施例1と同様に原料多結晶の溶融を行い、実施例1と同様に溶融にかかった時間を測定した。
この石英管には、5kWのハロゲンランプを9本、計45kWのものを設置し、石英レンズによって集光させる構造とした。集光率以外の熱を含めた熱効率は58%で、その内20kWが溶融に寄与する計算となった。
実施例2では、ハロゲンランプによる補助加熱があるために、多結晶シリコンの溶融にかかった時間は10時間であった。
Claims (14)
- 少なくとも、チャンバーと、該チャンバー内のルツボと、該ルツボの周囲に配されたヒーターと、種結晶を引き上げる引上げ機構と、前記種結晶および育成した単結晶の導通路とを具備し、前記ルツボ内に収容した原料多結晶を前記ヒーターによって溶融し、該溶融多結晶に前記種結晶を接触させて引き上げることによって単結晶を製造する単結晶製造装置において、
底部を曲面状とした円筒状の石英管と、ドーム形状の石英板とを具備し、
前記石英管は、前記チャンバーの上部より前記導通路を通して前記曲面状の底部が前記ルツボ上に臨むように配置され、前記石英板は、前記石英管を取り囲むように配置されたものであって、
前記石英管は、少なくとも前記底部が熱線を反射する反射構造で、前記石英板は、前記ルツボに向けて熱線を反射する反射構造であることを特徴とする単結晶製造装置。
- 前記石英管および前記石英板の反射構造として、金メッキ、金蒸着、金コーティングのいずれかが施されたものであることを特徴とする請求項1に記載の単結晶製造装置。
- 前記石英板の反射構造として、金メッキ、金蒸着、金コーティングのいずれかが施されたものであるとき、該金メッキ、金蒸着、金コーティングを石英で覆ったサンドイッチ構造であることを特徴とする請求項2に記載の単結晶製造装置。
- 前記石英管は、内部にハロゲンランプを具備し、該ハロゲンランプは前記原料多結晶を加熱するための集光反射構造をとるように配置されたものであることを特徴とする請求項1ないし請求項3のいずれか1項に記載の単結晶製造装置。
- 前記ハロゲンランプの集光反射構造として、レンズを備えたものであることを特徴とする請求項4に記載の単結晶製造装置。
- 前記石英管および/または前記石英板は、除熱のための水冷機構および/または空冷機構を備えたものであることを特徴とする請求項1ないし請求項5のいずれか1項に記載の単結晶製造装置。
- 前記石英管は、上下に移動することができるものであることを特徴とする請求項1ないし請求項6のいずれか1項に記載の単結晶製造装置。
- チョクラルスキー法により、ルツボ内に収容された原料多結晶をヒーターによって加熱して溶融し、種結晶を該溶融液に接触させた後に引き上げることによって単結晶を成長させる単結晶の製造方法において、
前記原料多結晶を加熱して溶融する際に、少なくとも底部を熱線を反射する反射構造とし、該底部を曲面状とした円筒状の石英管の底部をチャンバー上部より導通路を通して前記ルツボ上に臨むように前記石英管を配置するとともに、前記ルツボに向けて熱線を反射する反射構造としたドーム形状の石英板を前記石英管を取り囲むように設置して前記原料多結晶を加熱・溶融し、
溶融後、前記石英管は前記チャンバー外へ取り出し、その後前記種結晶を前記原料多結晶溶融液に接触させて前記単結晶を引き上げて製造することを特徴とする単結晶の製造方法。
- 前記石英管および前記石英板の反射構造として、金メッキ、金蒸着、金コーティングのいずれかを施したものとすることを特徴とする請求項8に記載の単結晶の製造方法。
- 前記石英板の反射構造として、金メッキ、金蒸着、金コーティングのいずれかを施したものを用いるとき、該金メッキ、金蒸着、金コーティングを石英で覆ったサンドイッチ構造のものを用いることを特徴とする請求項9に記載の単結晶の製造方法。
- 前記石英管として、前記原料多結晶を加熱するための集光反射構造をとるように配置されたハロゲンランプを備えたものを用いることを特徴とする請求項8ないし請求項10のいずれか1項に記載の単結晶の製造方法。
- 前記ハロゲンランプの集光構造として、レンズを備えたものを用いることを特徴とする請求項11に記載の単結晶の製造方法。
- 前記原料多結晶を加熱・溶融させる際に、前記石英管および/または前記石英板を、水冷および/または空冷しながら溶融することを特徴とする請求項8ないし請求項12のいずれか1項に記載の単結晶の製造方法。
- 前記石英管として、更に上下に移動することによって熱線の焦点を前記原料多結晶に合わせることができるものを用いることを特徴とする請求項8ないし請求項13のいずれか1項に記載の単結晶の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008801149571A CN101849043B (zh) | 2007-12-25 | 2008-12-01 | 单晶制造装置及制造方法 |
DE112008003322.6T DE112008003322B4 (de) | 2007-12-25 | 2008-12-01 | Vorrichtung und Verfahren zum Herstellen eines Einkristalls |
US12/734,423 US8337616B2 (en) | 2007-12-25 | 2008-12-01 | Apparatus and method for producing single crystal |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-332457 | 2007-12-25 | ||
JP2007332457A JP5163101B2 (ja) | 2007-12-25 | 2007-12-25 | 単結晶製造装置および製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009081523A1 true WO2009081523A1 (ja) | 2009-07-02 |
Family
ID=40800841
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/003542 WO2009081523A1 (ja) | 2007-12-25 | 2008-12-01 | 単結晶製造装置および製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8337616B2 (ja) |
JP (1) | JP5163101B2 (ja) |
KR (1) | KR101473788B1 (ja) |
CN (1) | CN101849043B (ja) |
DE (1) | DE112008003322B4 (ja) |
TW (1) | TWI405877B (ja) |
WO (1) | WO2009081523A1 (ja) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101219703B1 (ko) | 2010-11-11 | 2013-01-21 | 현대자동차주식회사 | 차량용 루프 에어백장치 |
KR101263082B1 (ko) * | 2010-11-15 | 2013-05-09 | 주식회사 엘지실트론 | 사파이어 잉곳 성장장치 |
CN102605426B (zh) * | 2012-03-14 | 2015-05-13 | 苏州先端稀有金属有限公司 | 一种用于超高温状态下产生温差的热场结构 |
US10358740B2 (en) * | 2014-07-25 | 2019-07-23 | Corner Star Limited | Crystal growing systems and methods including a passive heater |
CA2956451C (en) * | 2014-09-15 | 2017-07-11 | Materiaux Nieka Inc. | Method and apparatus for preparing an analytical sample by fusion |
US10872790B2 (en) | 2014-10-20 | 2020-12-22 | Applied Materials, Inc. | Optical system |
KR101654856B1 (ko) * | 2015-01-22 | 2016-09-06 | 주식회사 사파이어테크놀로지 | 단결정 성장용 히터 및 이를 이용한 단결정 성장장치 및 성장방법. |
CN104630886A (zh) * | 2015-02-09 | 2015-05-20 | 洛阳巨子新能源科技有限公司 | 一种晶体硅生长装置 |
JP6515791B2 (ja) * | 2015-11-26 | 2019-05-22 | 株式会社Sumco | シリコン単結晶の製造方法 |
CN108754429B (zh) * | 2018-08-28 | 2020-11-06 | 京东方科技集团股份有限公司 | 一种蒸发源 |
CN109913939B (zh) * | 2019-04-09 | 2023-03-21 | 西安奕斯伟材料科技有限公司 | 热屏蔽组件、拉晶炉系统及其工作方法 |
CN110257902A (zh) * | 2019-08-06 | 2019-09-20 | 阳江职业技术学院 | 一种单晶硅棒加工装置 |
TWI770953B (zh) * | 2021-04-22 | 2022-07-11 | 環球晶圓股份有限公司 | 長晶爐 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63319293A (ja) * | 1987-06-22 | 1988-12-27 | Nec Corp | シリコン単結晶引上成長炉 |
JPS6426377U (ja) * | 1987-08-03 | 1989-02-14 | ||
JP2001213691A (ja) * | 2000-01-31 | 2001-08-07 | Mitsubishi Materials Silicon Corp | 単結晶育成装置の反射部材及びそれを用いたシリコンの融解方法 |
JP2002226299A (ja) * | 2000-12-01 | 2002-08-14 | Toshiba Corp | 単結晶製造装置及び単結晶製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5836998A (ja) * | 1981-08-26 | 1983-03-04 | Toshiba Ceramics Co Ltd | 単結晶シリコン引上装置 |
DE3432467C1 (de) * | 1984-09-04 | 1986-03-27 | Kernforschungsanlage Jülich GmbH, 5170 Jülich | Stab- und Tiegelhalterung |
JP2513241B2 (ja) | 1987-07-20 | 1996-07-03 | アイシン精機株式会社 | 超音波モ−タ |
KR940004641B1 (ko) * | 1989-11-25 | 1994-05-27 | 삼성코닝 주식회사 | 단결정 제조장치 |
JPH0416587A (ja) * | 1990-05-02 | 1992-01-21 | Kawasaki Steel Corp | 単結晶引上装置 |
JP3016897B2 (ja) * | 1991-03-20 | 2000-03-06 | 信越半導体株式会社 | シリコン単結晶の製造方法及び装置 |
JP3245866B2 (ja) * | 1996-02-29 | 2002-01-15 | 住友金属工業株式会社 | 単結晶引き上げ方法及び単結晶引き上げ装置 |
JPH1081595A (ja) | 1996-09-04 | 1998-03-31 | Shin Etsu Handotai Co Ltd | 単結晶製造装置および製造方法 |
JP3671562B2 (ja) | 1996-11-22 | 2005-07-13 | 信越半導体株式会社 | 単結晶の製造装置および製造方法 |
US5942032A (en) * | 1997-08-01 | 1999-08-24 | Memc Electronic Materials, Inc. | Heat shield assembly and method of growing vacancy rich single crystal silicon |
WO1999022048A1 (fr) * | 1997-10-23 | 1999-05-06 | Josuke Nakata | Procede et dispositif de fabrication d'un monocristal |
US7001456B2 (en) * | 2003-05-16 | 2006-02-21 | Sumitomo Mitsubishi Silicon Corporation | Apparatus and method for supplying Crystalline materials in czochralski method |
US20080035050A1 (en) * | 2004-10-13 | 2008-02-14 | Shin-Etsu Handotai Co., Ltd. | An Apparatus for Producing a Single Crystal |
KR20070089348A (ko) * | 2006-02-28 | 2007-08-31 | 네오세미테크 주식회사 | 단결정 성장장치 |
-
2007
- 2007-12-25 JP JP2007332457A patent/JP5163101B2/ja active Active
-
2008
- 2008-12-01 DE DE112008003322.6T patent/DE112008003322B4/de active Active
- 2008-12-01 WO PCT/JP2008/003542 patent/WO2009081523A1/ja active Application Filing
- 2008-12-01 CN CN2008801149571A patent/CN101849043B/zh active Active
- 2008-12-01 KR KR1020107012497A patent/KR101473788B1/ko active IP Right Grant
- 2008-12-01 US US12/734,423 patent/US8337616B2/en active Active
- 2008-12-08 TW TW097147715A patent/TWI405877B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63319293A (ja) * | 1987-06-22 | 1988-12-27 | Nec Corp | シリコン単結晶引上成長炉 |
JPS6426377U (ja) * | 1987-08-03 | 1989-02-14 | ||
JP2001213691A (ja) * | 2000-01-31 | 2001-08-07 | Mitsubishi Materials Silicon Corp | 単結晶育成装置の反射部材及びそれを用いたシリコンの融解方法 |
JP2002226299A (ja) * | 2000-12-01 | 2002-08-14 | Toshiba Corp | 単結晶製造装置及び単結晶製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN101849043B (zh) | 2013-03-06 |
DE112008003322T5 (de) | 2010-11-25 |
DE112008003322B4 (de) | 2016-12-15 |
US8337616B2 (en) | 2012-12-25 |
TW200946722A (en) | 2009-11-16 |
KR101473788B1 (ko) | 2014-12-17 |
JP2009155131A (ja) | 2009-07-16 |
US20100229785A1 (en) | 2010-09-16 |
KR20100112114A (ko) | 2010-10-18 |
CN101849043A (zh) | 2010-09-29 |
TWI405877B (zh) | 2013-08-21 |
JP5163101B2 (ja) | 2013-03-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5163101B2 (ja) | 単結晶製造装置および製造方法 | |
JP4924200B2 (ja) | SiC単結晶の製造装置および製造方法 | |
JP2003501339A (ja) | 結晶成長およびアニーリング方法および装置 | |
CN105887186B (zh) | 硅单晶提拉设备与生长方法 | |
US8821636B2 (en) | Single-crystal manufacturing apparatus | |
JP4654030B2 (ja) | SiCウェハおよびその製造方法 | |
JP5392040B2 (ja) | 単結晶製造装置及び単結晶製造方法 | |
CN109913939B (zh) | 热屏蔽组件、拉晶炉系统及其工作方法 | |
KR101756687B1 (ko) | 단결정 제조장치 및 단결정 제조방법 | |
JP4265269B2 (ja) | SiC単結晶製造炉 | |
JP4244010B2 (ja) | 半導体単結晶の製造装置及びそれを用いた半導体単結晶の製造方法 | |
JP5776587B2 (ja) | 単結晶製造方法 | |
JP5949601B2 (ja) | 多層型熱反射板およびこれを用いた酸化物単結晶育成装置 | |
TW202202669A (zh) | 一種用於單晶矽生長爐的複合隔熱結構及單晶矽生長爐 | |
JPH0585881A (ja) | 単結晶引上装置 | |
JPH0471871B2 (ja) | ||
JPS61146786A (ja) | 半導体単結晶製造装置 | |
JP2008159781A (ja) | 固相シートの製造方法およびその方法に使用する輻射反射板 | |
JP2004238223A (ja) | 化合物半導体単結晶成長装置及び化合物半導体単結晶の製造方法 | |
JP2005289670A (ja) | 半導体単結晶製造装置 | |
TW201425662A (zh) | 藍寶石單晶的製造方法及晶種 | |
JP2004269329A (ja) | 単結晶の製造装置 | |
JPH07277864A (ja) | 高温耐熱性部材 | |
JP2015027921A (ja) | サファイア単結晶コア | |
KR20090117383A (ko) | 고효율 단결정 잉곳 성장장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200880114957.1 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08864963 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12734423 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 20107012497 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1120080033226 Country of ref document: DE |
|
RET | De translation (de og part 6b) |
Ref document number: 112008003322 Country of ref document: DE Date of ref document: 20101125 Kind code of ref document: P |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 08864963 Country of ref document: EP Kind code of ref document: A1 |