WO2009075307A1 - 環状化合物、フォトレジスト基材、フォトレジスト組成物、微細加工方法及び半導体装置 - Google Patents

環状化合物、フォトレジスト基材、フォトレジスト組成物、微細加工方法及び半導体装置 Download PDF

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Publication number
WO2009075307A1
WO2009075307A1 PCT/JP2008/072468 JP2008072468W WO2009075307A1 WO 2009075307 A1 WO2009075307 A1 WO 2009075307A1 JP 2008072468 W JP2008072468 W JP 2008072468W WO 2009075307 A1 WO2009075307 A1 WO 2009075307A1
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WO
WIPO (PCT)
Prior art keywords
group
substituted
carbon atoms
photoresist
cyclic compound
Prior art date
Application number
PCT/JP2008/072468
Other languages
English (en)
French (fr)
Inventor
Takashi Kashiwamura
Akinori Yomogita
Mitsuru Shibata
Takanori Owada
Hirotoshi Ishii
Masashi Sekikawa
Norio Tomotsu
Original Assignee
Idemitsu Kosan Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co., Ltd. filed Critical Idemitsu Kosan Co., Ltd.
Priority to US12/747,669 priority Critical patent/US20100266952A1/en
Publication of WO2009075307A1 publication Critical patent/WO2009075307A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/76—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring
    • C07C69/94—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring of polycyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of six-membered aromatic rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C65/00—Compounds having carboxyl groups bound to carbon atoms of six—membered aromatic rings and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups
    • C07C65/21—Compounds having carboxyl groups bound to carbon atoms of six—membered aromatic rings and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups
    • C07C65/24—Compounds having carboxyl groups bound to carbon atoms of six—membered aromatic rings and containing any of the groups OH, O—metal, —CHO, keto, ether, groups, groups, or groups containing ether groups, groups, groups, or groups polycyclic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2601/00—Systems containing only non-condensed rings
    • C07C2601/12—Systems containing only non-condensed rings with a six-membered ring
    • C07C2601/14—The ring being saturated
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/58—Ring systems containing bridged rings containing three rings
    • C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74—Adamantanes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/92—Systems containing at least three condensed rings with a condensed ring system consisting of at least two mutually uncondensed aromatic ring systems, linked by an annular structure formed by carbon chains on non-adjacent positions of the aromatic system, e.g. cyclophanes

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Steroid Compounds (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)

Abstract

　下記式（Ｉ）で表される環状化合物。 ［式中、同一の芳香環上に存在する２つのＲ１のうち、一方がＲ３であり、他方が溶解性調整基である。Ｒ３はそれぞれ水素、置換もしくは無置換の炭素数１～２０の直鎖状脂肪族炭化水素基、置換もしくは無置換の炭素数３～１２の分岐を有する脂肪族炭化水素基、置換もしくは無置換の炭素数３～２０の環状脂肪族炭化水素基、置換もしくは無置換の炭素数６～１０の芳香族基、アルコキシアルキル基、シリル基、又はこれらの基と二価の基が結合した基である。］
PCT/JP2008/072468 2007-12-11 2008-12-11 環状化合物、フォトレジスト基材、フォトレジスト組成物、微細加工方法及び半導体装置 WO2009075307A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/747,669 US20100266952A1 (en) 2007-12-11 2008-12-11 Cyclic compound, photoresist base, photoresist composition, microfabrication process, and semiconductor device

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2007320224 2007-12-11
JP2007-320224 2007-12-11
JP2008101108 2008-04-09
JP2008-101108 2008-04-09
JP2008158769A JP5354420B2 (ja) 2007-12-11 2008-06-18 環状化合物、フォトレジスト基材、フォトレジスト組成物、微細加工方法及び半導体装置
JP2008-158769 2008-06-18

Publications (1)

Publication Number Publication Date
WO2009075307A1 true WO2009075307A1 (ja) 2009-06-18

Family

ID=40755548

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/072468 WO2009075307A1 (ja) 2007-12-11 2008-12-11 環状化合物、フォトレジスト基材、フォトレジスト組成物、微細加工方法及び半導体装置

Country Status (5)

Country Link
US (1) US20100266952A1 (ja)
JP (1) JP5354420B2 (ja)
KR (1) KR20100096132A (ja)
TW (1) TW200940498A (ja)
WO (1) WO2009075307A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011024957A1 (ja) * 2009-08-31 2011-03-03 三菱瓦斯化学株式会社 環状化合物、その製造方法、感放射線性組成物およびレジストパターン形成方法
EP2535768A1 (en) * 2010-02-12 2012-12-19 Mitsubishi Gas Chemical Company, Inc. Underlayer film material, and method for formation of multilayer resist pattern
JP2013100261A (ja) * 2011-10-14 2013-05-23 Idemitsu Kosan Co Ltd 環状化合物及びその組成物
US8765356B2 (en) 2011-09-23 2014-07-01 Dow Global Technologies Llc Calixarene compound and photoresist composition comprising same
US8936900B2 (en) 2011-09-23 2015-01-20 Rohm And Haas Electronic Materials Llc Calixarene and photoresist composition comprising same

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5181782B2 (ja) * 2008-03-31 2013-04-10 大日本印刷株式会社 ポジ型レジスト組成物、及び当該ポジ型レジスト組成物を用いたパターン形成方法
WO2010067621A1 (ja) * 2008-12-11 2010-06-17 出光興産株式会社 環状化合物及びそれを用いたフォトレジスト組成物
JP2010163382A (ja) * 2009-01-14 2010-07-29 Idemitsu Kosan Co Ltd 環状化合物の製造方法
JP5725021B2 (ja) * 2010-05-26 2015-05-27 三菱瓦斯化学株式会社 環状化合物の精製方法
US8795540B2 (en) * 2011-12-22 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Selective bias compensation for patterning steps in CMOS processes

Citations (2)

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WO2006136950A1 (en) * 2005-06-17 2006-12-28 British American Tobacco Italia S.P.A. Method
JP2007197389A (ja) * 2006-01-27 2007-08-09 Idemitsu Kosan Co Ltd 環状化合物、並びにそれからなるフォトレジスト基材及び組成物

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US6093517A (en) * 1998-07-31 2000-07-25 International Business Machines Corporation Calixarenes for use as dissolution inhibitors in lithographic photoresist compositions
US20020051932A1 (en) * 2000-05-31 2002-05-02 Shipley Company, L.L.C. Photoresists for imaging with high energy radiation
JP4076789B2 (ja) * 2002-05-09 2008-04-16 Ｊｓｒ株式会社 カリックスレゾルシンアレーン誘導体および感放射線性樹脂組成物
JP4429620B2 (ja) * 2002-10-15 2010-03-10 出光興産株式会社 感放射線性有機化合物
US20090042123A1 (en) * 2005-06-01 2009-02-12 Hiroo Kinoshita Calixresorcinarene compound, photoresist base comprising the same, and composition thereof
JP5396738B2 (ja) * 2007-05-09 2014-01-22 三菱瓦斯化学株式会社 感放射線性組成物、化合物、化合物の製造方法およびレジストパターン形成方法
WO2008153154A1 (ja) * 2007-06-15 2008-12-18 Idemitsu Kosan Co., Ltd. 環状化合物、フォトレジスト基材及びフォトレジスト組成物

Patent Citations (2)

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WO2006136950A1 (en) * 2005-06-17 2006-12-28 British American Tobacco Italia S.P.A. Method
JP2007197389A (ja) * 2006-01-27 2007-08-09 Idemitsu Kosan Co Ltd 環状化合物、並びにそれからなるフォトレジスト基材及び組成物

Non-Patent Citations (2)

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JOURNAL OF ORGANIC CHEMISTRY, vol. 59, 1994, pages 1532 - 1541 *
JOURNAL OF ORGANIC CHEMISTRY, vol. 72, 23 November 2007 (2007-11-23), pages 9283 - 9290 *

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011024957A1 (ja) * 2009-08-31 2011-03-03 三菱瓦斯化学株式会社 環状化合物、その製造方法、感放射線性組成物およびレジストパターン形成方法
KR20120047272A (ko) * 2009-08-31 2012-05-11 미츠비시 가스 가가쿠 가부시키가이샤 환상 화합물, 그 제조 방법, 감방사선성 조성물 및 레지스트 패턴 형성 방법
EP2474518A1 (en) * 2009-08-31 2012-07-11 Mitsubishi Gas Chemical Company, Inc. Cyclic compound, process for production of the cyclic compound, radiation-sensitive composition, and method for formation of resist pattern
EP2474518A4 (en) * 2009-08-31 2014-03-26 Mitsubishi Gas Chemical Co CYCLIC COMPOUND, CYCLIC COMPOUND PRODUCTION METHOD, RADIATION-SENSITIVE COMPOSITION, AND METHOD FOR FORMING A RESISTANCE STRUCTURE
JP5733211B2 (ja) * 2009-08-31 2015-06-10 三菱瓦斯化学株式会社 環状化合物、その製造方法、感放射線性組成物およびレジストパターン形成方法
KR101669704B1 (ko) * 2009-08-31 2016-10-27 미츠비시 가스 가가쿠 가부시키가이샤 환상 화합물, 그 제조 방법, 감방사선성 조성물 및 레지스트 패턴 형성 방법
EP2535768A1 (en) * 2010-02-12 2012-12-19 Mitsubishi Gas Chemical Company, Inc. Underlayer film material, and method for formation of multilayer resist pattern
EP2535768A4 (en) * 2010-02-12 2013-08-28 Mitsubishi Gas Chemical Co SUB-LAYER FILM MATERIAL, AND METHOD FOR FORMING MULTI-LAYER RESERVE PATTERN
US8765356B2 (en) 2011-09-23 2014-07-01 Dow Global Technologies Llc Calixarene compound and photoresist composition comprising same
US8936900B2 (en) 2011-09-23 2015-01-20 Rohm And Haas Electronic Materials Llc Calixarene and photoresist composition comprising same
JP2013100261A (ja) * 2011-10-14 2013-05-23 Idemitsu Kosan Co Ltd 環状化合物及びその組成物

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TW200940498A (en) 2009-10-01
JP2009269901A (ja) 2009-11-19
US20100266952A1 (en) 2010-10-21
KR20100096132A (ko) 2010-09-01
JP5354420B2 (ja) 2013-11-27

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