WO2009072163A1 - 光電変換モジュール - Google Patents

光電変換モジュール Download PDF

Info

Publication number
WO2009072163A1
WO2009072163A1 PCT/JP2007/001343 JP2007001343W WO2009072163A1 WO 2009072163 A1 WO2009072163 A1 WO 2009072163A1 JP 2007001343 W JP2007001343 W JP 2007001343W WO 2009072163 A1 WO2009072163 A1 WO 2009072163A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
impedance matching
matching circuit
conversion module
metallic
Prior art date
Application number
PCT/JP2007/001343
Other languages
English (en)
French (fr)
Inventor
Hachinori Ogawa
Atsushi Kanayama
Original Assignee
Kyosemi Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kyosemi Corporation filed Critical Kyosemi Corporation
Priority to PCT/JP2007/001343 priority Critical patent/WO2009072163A1/ja
Priority to EP07849778.1A priority patent/EP2219229A4/en
Priority to US12/734,780 priority patent/US8395102B2/en
Priority to CN200780101819.5A priority patent/CN101884118B/zh
Priority to JP2009544498A priority patent/JP5118151B2/ja
Priority to KR1020107011477A priority patent/KR101391890B1/ko
Priority to TW097120742A priority patent/TWI390265B/zh
Publication of WO2009072163A1 publication Critical patent/WO2009072163A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4201—Packages, e.g. shape, construction, internal or external details
    • G02B6/4274—Electrical aspects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

　光電変換モジュールは、光ファイバにより送信されて来る光信号を電気信号に変換する光電変換素子と、光電変換された電気信号を外部に出力する信号出力部を有し、前記光電変換素子の出力電極と前記信号出力部の間に設けられたインピーダンス整合回路と、このインピーダンス整合回路を組み込んだ基板を設け、前記インピーダンス整合回路は、前記基板の表面に隙間をあけて形成された複数の金属被膜と、これら金属被膜のうち隣接する金属被膜同士を電気的に接続する複数の金属接続線とを有する。
PCT/JP2007/001343 2007-12-04 2007-12-04 光電変換モジュール WO2009072163A1 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
PCT/JP2007/001343 WO2009072163A1 (ja) 2007-12-04 2007-12-04 光電変換モジュール
EP07849778.1A EP2219229A4 (en) 2007-12-04 2007-12-04 PHOTOELECTRIC CONVERSION MODULE
US12/734,780 US8395102B2 (en) 2007-12-04 2007-12-04 Photoelectric conversion module with isolating groove at each gap between adjacent metallic coating layers
CN200780101819.5A CN101884118B (zh) 2007-12-04 2007-12-04 光电转换模块
JP2009544498A JP5118151B2 (ja) 2007-12-04 2007-12-04 光電変換モジュール
KR1020107011477A KR101391890B1 (ko) 2007-12-04 2007-12-04 광전변환모듈
TW097120742A TWI390265B (zh) 2007-12-04 2008-06-04 Photoelectric conversion module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/001343 WO2009072163A1 (ja) 2007-12-04 2007-12-04 光電変換モジュール

Publications (1)

Publication Number Publication Date
WO2009072163A1 true WO2009072163A1 (ja) 2009-06-11

Family

ID=40717349

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/001343 WO2009072163A1 (ja) 2007-12-04 2007-12-04 光電変換モジュール

Country Status (7)

Country Link
US (1) US8395102B2 (ja)
EP (1) EP2219229A4 (ja)
JP (1) JP5118151B2 (ja)
KR (1) KR101391890B1 (ja)
CN (1) CN101884118B (ja)
TW (1) TWI390265B (ja)
WO (1) WO2009072163A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014049657A (ja) * 2012-08-31 2014-03-17 Fujitsu Ltd 光モジュール
WO2020008594A1 (ja) * 2018-07-05 2020-01-09 三菱電機株式会社 光送信モジュール

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8742308B2 (en) * 2010-12-15 2014-06-03 Teledyne Scientific & Imaging, Llc Imaging array device structure with separate charge storage capacitor layer
JP6044847B2 (ja) 2012-02-03 2016-12-14 ソニー株式会社 半導体装置及び電子機器
CN103236461B (zh) * 2013-04-03 2016-05-25 友达光电股份有限公司 光电转换模块

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0520358U (ja) * 1991-08-20 1993-03-12 三菱電機株式会社 レーザダイオードチツプキヤリア
JPH1138372A (ja) * 1997-07-24 1999-02-12 Oki Electric Ind Co Ltd 高周波回路、それを用いた光モジュール及びインピーダンス整合方法
JP2002353493A (ja) 2001-05-29 2002-12-06 Mitsubishi Electric Corp 光モジュール
JP2003115630A (ja) * 2001-10-05 2003-04-18 Kyocera Corp 半導体素子収納用パッケージ
JP2005338678A (ja) * 2004-05-31 2005-12-08 Opnext Japan Inc 光変調器モジュール

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4673958A (en) * 1985-01-31 1987-06-16 Texas Instruments Incorporated Monolithic microwave diodes
JPH0520358A (ja) 1991-07-10 1993-01-29 Nec Corp イメージデータ読出し方法
JP2001209017A (ja) * 1999-11-15 2001-08-03 Mitsubishi Electric Corp 光電変換半導体装置
US6930300B1 (en) * 2002-07-30 2005-08-16 Finisar Corporation Method and apparatus for monitoring a photo-detector in an optical transceiver
JP3759494B2 (ja) * 2002-12-12 2006-03-22 セイコーエプソン株式会社 光通信装置
DE602004029469D1 (de) * 2003-07-23 2010-11-18 Nxp Bv Kompakt-impedanztransformationsschaltung
JP4970837B2 (ja) * 2006-04-25 2012-07-11 日本オプネクスト株式会社 受光素子モジュール

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0520358U (ja) * 1991-08-20 1993-03-12 三菱電機株式会社 レーザダイオードチツプキヤリア
JPH1138372A (ja) * 1997-07-24 1999-02-12 Oki Electric Ind Co Ltd 高周波回路、それを用いた光モジュール及びインピーダンス整合方法
JP2002353493A (ja) 2001-05-29 2002-12-06 Mitsubishi Electric Corp 光モジュール
JP2003115630A (ja) * 2001-10-05 2003-04-18 Kyocera Corp 半導体素子収納用パッケージ
JP2005338678A (ja) * 2004-05-31 2005-12-08 Opnext Japan Inc 光変調器モジュール

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2219229A4

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014049657A (ja) * 2012-08-31 2014-03-17 Fujitsu Ltd 光モジュール
WO2020008594A1 (ja) * 2018-07-05 2020-01-09 三菱電機株式会社 光送信モジュール
JPWO2020008594A1 (ja) * 2018-07-05 2020-07-16 三菱電機株式会社 光送信モジュール

Also Published As

Publication number Publication date
US20100230582A1 (en) 2010-09-16
TW200925688A (en) 2009-06-16
JPWO2009072163A1 (ja) 2011-04-21
KR20100093533A (ko) 2010-08-25
KR101391890B1 (ko) 2014-05-07
EP2219229A1 (en) 2010-08-18
TWI390265B (zh) 2013-03-21
CN101884118A (zh) 2010-11-10
JP5118151B2 (ja) 2013-01-16
US8395102B2 (en) 2013-03-12
EP2219229A4 (en) 2015-10-07
CN101884118B (zh) 2013-01-02

Similar Documents

Publication Publication Date Title
WO2009028287A1 (ja) 光電変換素子、光電変換素子接続体および光電変換モジュール
MX2011007219A (es) Accesorio electrico y metodo para proveer el mismo.
WO2012108636A3 (en) Light emitting device having wavelength converting layer
WO2009066583A1 (ja) 素子間配線部材、光電変換素子およびこれらを用いた光電変換素子接続体ならびに光電変換モジュール
WO2013130831A3 (en) Chip assembly configuration with densely packed optical interconnects
WO2009072163A1 (ja) 光電変換モジュール
WO2006100682A3 (en) Method and system for digital pen assembly
WO2009063855A1 (ja) 太陽電池用端子箱、及び取付構造
TW200627653A (en) Interconnection structure through passive component
EP1883117A3 (en) Photovoltaic element and fabrication method thereof
WO2010014958A3 (en) Enhanced thermally isolated thermoelectrics
WO2008096716A1 (ja) 半導体サブモジュール、コネクタと半導体サブモジュールとの接続方法、および、光モジュール
EP4221470A3 (en) Assembly structure
EP2228826A3 (en) Solid-state image pickup device and a method of manufacturing the same
WO2010021669A3 (en) Monolithic coherent optical detectors
WO2007065092A3 (en) Means and method for electrically connecting photovoltaic cells in a solar module
WO2008109235A3 (en) Optical transceiver for computing applications
TW200633322A (en) Connector
TW200737534A (en) Photovoltaic power device
WO2007120296A3 (en) Electronic device and a process for forming the electronic device
TW200700730A (en) Probe card with stacked substrate
ATE543219T1 (de) Fotovoltaikmodul mit integrierter stromabnahme und zwischenverbindung
RU2011128409A (ru) Гибкий модульный узел
WO2008143213A1 (ja) 表示装置
JP5296838B2 (ja) 光受信回路

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200780101819.5

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07849778

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2009544498

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 12734780

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 2007849778

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 20107011477

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE