WO2009069712A1 - ブロック化イソシアネート基を有するシリコン含有レジスト下層膜形成組成物 - Google Patents

ブロック化イソシアネート基を有するシリコン含有レジスト下層膜形成組成物 Download PDF

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Publication number
WO2009069712A1
WO2009069712A1 PCT/JP2008/071577 JP2008071577W WO2009069712A1 WO 2009069712 A1 WO2009069712 A1 WO 2009069712A1 JP 2008071577 W JP2008071577 W JP 2008071577W WO 2009069712 A1 WO2009069712 A1 WO 2009069712A1
Authority
WO
WIPO (PCT)
Prior art keywords
atom
resist undercoat
isocyanato
linkage
integer
Prior art date
Application number
PCT/JP2008/071577
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Makoto Nakajima
Yuta Kanno
Wataru Shibayama
Original Assignee
Nissan Chemical Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Industries, Ltd. filed Critical Nissan Chemical Industries, Ltd.
Priority to KR1020107014591A priority Critical patent/KR101524712B1/ko
Priority to CN200880118089.4A priority patent/CN101878451B/zh
Priority to JP2009543854A priority patent/JP5252234B2/ja
Publication of WO2009069712A1 publication Critical patent/WO2009069712A1/ja

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
PCT/JP2008/071577 2007-11-30 2008-11-27 ブロック化イソシアネート基を有するシリコン含有レジスト下層膜形成組成物 WO2009069712A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020107014591A KR101524712B1 (ko) 2007-11-30 2008-11-27 블록화 이소시아네이트기를 갖는 실리콘 함유 레지스트 하층막 형성 조성물
CN200880118089.4A CN101878451B (zh) 2007-11-30 2008-11-27 具有封端异氰酸酯基且含有硅的形成抗蚀剂下层膜的组合物
JP2009543854A JP5252234B2 (ja) 2007-11-30 2008-11-27 ブロック化イソシアネート基を有するシリコン含有レジスト下層膜形成組成物

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007311268 2007-11-30
JP2007-311268 2007-11-30
JP2008-011115 2008-01-22
JP2008011115 2008-01-22

Publications (1)

Publication Number Publication Date
WO2009069712A1 true WO2009069712A1 (ja) 2009-06-04

Family

ID=40678604

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/071577 WO2009069712A1 (ja) 2007-11-30 2008-11-27 ブロック化イソシアネート基を有するシリコン含有レジスト下層膜形成組成物

Country Status (5)

Country Link
JP (1) JP5252234B2 (zh)
KR (1) KR101524712B1 (zh)
CN (1) CN101878451B (zh)
TW (1) TWI450042B (zh)
WO (1) WO2009069712A1 (zh)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010532003A (ja) * 2007-03-12 2010-09-30 ブルーワー サイエンス アイ エヌ シー． フォトリソグラフィー工程において使用する材料のためのアミン拘束添加物
CN102405533A (zh) * 2009-06-10 2012-04-04 霍尼韦尔国际公司 用于光学透明基板的抗反射涂层
JP2013067798A (ja) * 2011-09-21 2013-04-18 Dow Global Technologies Llc フォトリソグラフィのための組成物および反射防止コーティング
JP2013173916A (ja) * 2011-12-21 2013-09-05 Dow Global Technologies Llc 反射防止被膜用の組成物
WO2013187209A1 (ja) * 2012-06-12 2013-12-19 株式会社Adeka 感光性組成物
WO2014034688A1 (ja) * 2012-08-30 2014-03-06 東京応化工業株式会社 基板表面の改質方法、改質膜、及び基板表面の改質に用いられる被覆溶液
JP2014157242A (ja) * 2013-02-15 2014-08-28 Shin Etsu Chem Co Ltd レジスト下層膜形成用組成物及びパターン形成方法
WO2019124514A1 (ja) * 2017-12-20 2019-06-27 日産化学株式会社 光硬化性シリコン含有被覆膜形成組成物
JPWO2018143359A1 (ja) * 2017-02-03 2019-11-21 日産化学株式会社 ウレア結合を有する構造単位を有するポリマーを含むレジスト下層膜形成組成物
JP2020041125A (ja) * 2018-09-10 2020-03-19 エボニック オペレーションズ ゲーエムベーハー シラン官能性ポリウレタン架橋剤のスズフリー触媒反応
WO2021193030A1 (ja) * 2020-03-27 2021-09-30 Jsr株式会社 電子線又は極端紫外線リソグラフィー用レジスト下層膜形成組成物、電子線又は極端紫外線リソグラフィー用レジスト下層膜、及び半導体基板の製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9291900B2 (en) * 2011-01-24 2016-03-22 Nissan Chemical Industries, Ltd. Composition for forming resist underlayer film, containing silicon that bears diketone-structure-containing organic group
CN103718111B (zh) * 2011-07-20 2017-06-23 日产化学工业株式会社 含钛和硅的光刻用薄膜形成用组合物
KR102099712B1 (ko) 2013-01-15 2020-04-10 삼성전자주식회사 패턴 형성 방법 및 이를 이용한 반도체 소자의 제조 방법
WO2015178235A1 (ja) * 2014-05-22 2015-11-26 日産化学工業株式会社 ブロックイソシアネート構造を含むポリマーを含むリソグラフィー用レジスト下層膜形成組成物
CN107077072B (zh) * 2014-11-19 2021-05-25 日产化学工业株式会社 能够湿式除去的含有硅的抗蚀剂下层膜形成用组合物
CN107003613B (zh) * 2014-12-08 2021-06-15 日产化学工业株式会社 包含具有含卤素的羧酸酰胺基的水解性硅烷的光刻用抗蚀剂下层膜形成用组合物
TW201708965A (zh) * 2015-04-07 2017-03-01 三菱瓦斯化學股份有限公司 微影用下層膜形成用材料、微影用下層膜形成用組成物、微影用下層膜及圖型形成方法
CN109111124A (zh) * 2018-09-12 2019-01-01 江苏世泰实验器材有限公司 一种防粘连盖玻片及其制备方法
JP6981945B2 (ja) * 2018-09-13 2021-12-17 信越化学工業株式会社 パターン形成方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000001752A1 (fr) * 1998-07-03 2000-01-13 Clariant International Ltd. Composition pour la formation d'un film a legere absorption contenant un compose d'isocyanate bloque et film antireflet obtenu
JP2003122018A (ja) * 2001-10-18 2003-04-25 Shin Etsu Chem Co Ltd 化学増幅型レジストパターン用表面処理剤及びパターン形成方法
JP2005352104A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 反射防止膜材料、及びこれの製造方法、これを用いた反射防止膜、パターン形成
JP2007178455A (ja) * 2005-12-26 2007-07-12 Tokyo Ohka Kogyo Co Ltd レジスト下層膜用組成物、これを用いたレジスト下層膜及び基板のパターン形成方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI388876B (zh) * 2003-12-26 2013-03-11 Fujifilm Corp 抗反射膜、偏光板，其製造方法，液晶顯示元件，液晶顯示裝置，及影像顯示裝置
JP2007192875A (ja) * 2006-01-17 2007-08-02 Tokyo Ohka Kogyo Co Ltd 下層膜形成用材料、積層体およびパターン形成方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2000001752A1 (fr) * 1998-07-03 2000-01-13 Clariant International Ltd. Composition pour la formation d'un film a legere absorption contenant un compose d'isocyanate bloque et film antireflet obtenu
JP2003122018A (ja) * 2001-10-18 2003-04-25 Shin Etsu Chem Co Ltd 化学増幅型レジストパターン用表面処理剤及びパターン形成方法
JP2005352104A (ja) * 2004-06-10 2005-12-22 Shin Etsu Chem Co Ltd 反射防止膜材料、及びこれの製造方法、これを用いた反射防止膜、パターン形成
JP2007178455A (ja) * 2005-12-26 2007-07-12 Tokyo Ohka Kogyo Co Ltd レジスト下層膜用組成物、これを用いたレジスト下層膜及び基板のパターン形成方法

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010532003A (ja) * 2007-03-12 2010-09-30 ブルーワー サイエンス アイ エヌ シー． フォトリソグラフィー工程において使用する材料のためのアミン拘束添加物
US8784985B2 (en) 2009-06-10 2014-07-22 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
CN102405533A (zh) * 2009-06-10 2012-04-04 霍尼韦尔国际公司 用于光学透明基板的抗反射涂层
JP2013067798A (ja) * 2011-09-21 2013-04-18 Dow Global Technologies Llc フォトリソグラフィのための組成物および反射防止コーティング
JP2013173916A (ja) * 2011-12-21 2013-09-05 Dow Global Technologies Llc 反射防止被膜用の組成物
JPWO2013187209A1 (ja) * 2012-06-12 2016-02-04 株式会社Adeka 感光性組成物
WO2013187209A1 (ja) * 2012-06-12 2013-12-19 株式会社Adeka 感光性組成物
WO2014034688A1 (ja) * 2012-08-30 2014-03-06 東京応化工業株式会社 基板表面の改質方法、改質膜、及び基板表面の改質に用いられる被覆溶液
JPWO2014034688A1 (ja) * 2012-08-30 2016-08-08 東京応化工業株式会社 基板表面の改質方法、改質膜、及び基板表面の改質に用いられる被覆溶液
JP2014157242A (ja) * 2013-02-15 2014-08-28 Shin Etsu Chem Co Ltd レジスト下層膜形成用組成物及びパターン形成方法
JPWO2018143359A1 (ja) * 2017-02-03 2019-11-21 日産化学株式会社 ウレア結合を有する構造単位を有するポリマーを含むレジスト下層膜形成組成物
JP7128447B2 (ja) 2017-02-03 2022-08-31 日産化学株式会社 ウレア結合を有する構造単位を有するポリマーを含むレジスト下層膜形成組成物
WO2019124514A1 (ja) * 2017-12-20 2019-06-27 日産化学株式会社 光硬化性シリコン含有被覆膜形成組成物
JPWO2019124514A1 (ja) * 2017-12-20 2021-01-14 日産化学株式会社 光硬化性シリコン含有被覆膜形成組成物
JP7315900B2 (ja) 2017-12-20 2023-07-27 日産化学株式会社 光硬化性シリコン含有被覆膜形成組成物
JP2020041125A (ja) * 2018-09-10 2020-03-19 エボニック オペレーションズ ゲーエムベーハー シラン官能性ポリウレタン架橋剤のスズフリー触媒反応
WO2021193030A1 (ja) * 2020-03-27 2021-09-30 Jsr株式会社 電子線又は極端紫外線リソグラフィー用レジスト下層膜形成組成物、電子線又は極端紫外線リソグラフィー用レジスト下層膜、及び半導体基板の製造方法

Also Published As

Publication number Publication date
JP5252234B2 (ja) 2013-07-31
KR20100099240A (ko) 2010-09-10
KR101524712B1 (ko) 2015-06-01
CN101878451B (zh) 2013-04-24
JPWO2009069712A1 (ja) 2011-04-14
TW200941145A (en) 2009-10-01
TWI450042B (zh) 2014-08-21
CN101878451A (zh) 2010-11-03

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