WO2009060802A1 - 半導体レーザ素子 - Google Patents

半導体レーザ素子 Download PDF

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Publication number
WO2009060802A1
WO2009060802A1 PCT/JP2008/069914 JP2008069914W WO2009060802A1 WO 2009060802 A1 WO2009060802 A1 WO 2009060802A1 JP 2008069914 W JP2008069914 W JP 2008069914W WO 2009060802 A1 WO2009060802 A1 WO 2009060802A1
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WO
WIPO (PCT)
Prior art keywords
laser element
semiconductor laser
layer
conductivity type
groove section
Prior art date
Application number
PCT/JP2008/069914
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English (en)
French (fr)
Inventor
Shinya Sonobe
Shingo Masui
Original Assignee
Nichia Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2007290590A external-priority patent/JP5444609B2/ja
Priority claimed from JP2008203019A external-priority patent/JP5223531B2/ja
Application filed by Nichia Corporation filed Critical Nichia Corporation
Priority to CN2008801153115A priority Critical patent/CN101855798B/zh
Priority to US12/742,075 priority patent/US8548023B2/en
Priority to EP08847356.6A priority patent/EP2224558B1/en
Publication of WO2009060802A1 publication Critical patent/WO2009060802A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
    • H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/0014—Measuring characteristics or properties thereof
    • H01S5/0021—Degradation or life time measurements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H01S5/0283—Optically inactive coating on the facet, e.g. half-wave coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
    • H01S5/166—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising non-semiconducting materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3214—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities comprising materials from other groups of the periodic system than the materials of the active layer, e.g. ZnSe claddings and GaAs active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)

Abstract

　高出力の半導体レーザ素子においても、共振器端面での発熱を最小限にとどめて、ＣＯＤレベルを向上させることができるとともに、良好なＦＦＰ形状を得ることができ、信頼性が高く、長寿命の半導体レーザ素子を提供することを目的とする。 　第１導電型半導体層、活性層及び第２導電型半導体層からなる積層体と、前記第２導電型半導体層に接触して共振器方向に平行なストライプ状の溝部を有し、絶縁体からなる第２埋込層とを有し、前記溝部の共振器端面側に誘電体からなる第１埋込層が埋め込まれており、前記溝部の内側に導電層が埋め込まれている半導体レーザ素子。
PCT/JP2008/069914 2007-11-08 2008-10-31 半導体レーザ素子 WO2009060802A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008801153115A CN101855798B (zh) 2007-11-08 2008-10-31 半导体激光器元件
US12/742,075 US8548023B2 (en) 2007-11-08 2008-10-31 Semiconductor laser element
EP08847356.6A EP2224558B1 (en) 2007-11-08 2008-10-31 Semiconductor laser element

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007290590A JP5444609B2 (ja) 2007-11-08 2007-11-08 半導体レーザ素子
JP2007-290590 2007-11-08
JP2008203019A JP5223531B2 (ja) 2008-08-06 2008-08-06 半導体レーザ素子
JP2008-203019 2008-08-06

Publications (1)

Publication Number Publication Date
WO2009060802A1 true WO2009060802A1 (ja) 2009-05-14

Family

ID=40625695

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Application Number Title Priority Date Filing Date
PCT/JP2008/069914 WO2009060802A1 (ja) 2007-11-08 2008-10-31 半導体レーザ素子

Country Status (5)

Country Link
US (1) US8548023B2 (ja)
EP (1) EP2224558B1 (ja)
KR (1) KR101548028B1 (ja)
CN (1) CN101855798B (ja)
WO (1) WO2009060802A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013157176A1 (ja) * 2012-04-16 2013-10-24 パナソニック株式会社 半導体発光素子

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US8283652B2 (en) * 2010-07-28 2012-10-09 SemiLEDs Optoelectronics Co., Ltd. Vertical light emitting diode (VLED) die having electrode frame and method of fabrication
US8723160B2 (en) 2010-07-28 2014-05-13 SemiLEDs Optoelectronics Co., Ltd. Light emitting diode (LED) die having peripheral electrode frame and method of fabrication
EP2741381B1 (en) * 2012-12-06 2020-05-06 Nichia Corporation Semiconductor laser element
JP6135559B2 (ja) * 2014-03-10 2017-05-31 ソニー株式会社 半導体発光素子および半導体発光素子の製造方法ならびに半導体素子
JP6409614B2 (ja) * 2015-02-23 2018-10-24 日亜化学工業株式会社 半導体素子の製造方法及び半導体素子
DE102015116336B4 (de) * 2015-09-28 2020-03-19 Osram Opto Semiconductors Gmbh Halbleiterlaser
DE102015116335A1 (de) * 2015-09-28 2017-03-30 Osram Opto Semiconductors Gmbh Halbleiterlaser
DE112019000483T5 (de) * 2018-01-23 2020-10-29 Sony Semiconductor Solutions Corporation Halbleiterlaser und elektronische vorrichtung
JP7295371B2 (ja) * 2018-08-31 2023-06-21 日亜化学工業株式会社 半導体レーザ素子
US20230104488A1 (en) * 2021-10-06 2023-04-06 Ii-Vi Delaware, Inc. Control Of Current Spread In Semiconductor Laser Devices

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JP2002164617A (ja) * 2000-09-18 2002-06-07 Fuji Photo Film Co Ltd 半導体レーザ素子
JP2003264335A (ja) * 2002-03-11 2003-09-19 Nec Corp 外部共振器型波長可変パルス光源
JP2003332244A (ja) 2002-05-13 2003-11-21 Nichia Chem Ind Ltd 窒化物半導体基板の製造方法
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JP2006041491A (ja) 2004-06-21 2006-02-09 Matsushita Electric Ind Co Ltd 半導体レーザ素子及びその製造方法
JP2007129236A (ja) 2005-11-03 2007-05-24 Samsung Electronics Co Ltd 窒化物半導体レーザ素子及びその製造方法
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Title
See also references of EP2224558A4

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013157176A1 (ja) * 2012-04-16 2013-10-24 パナソニック株式会社 半導体発光素子
CN103477513A (zh) * 2012-04-16 2013-12-25 松下电器产业株式会社 半导体发光元件
JP5608815B2 (ja) * 2012-04-16 2014-10-15 パナソニック株式会社 半導体発光素子
JPWO2013157176A1 (ja) * 2012-04-16 2015-12-21 パナソニック株式会社 半導体発光素子

Also Published As

Publication number Publication date
EP2224558A4 (en) 2013-05-22
KR20100086037A (ko) 2010-07-29
CN101855798B (zh) 2013-02-27
KR101548028B1 (ko) 2015-08-27
CN101855798A (zh) 2010-10-06
US8548023B2 (en) 2013-10-01
US20100278207A1 (en) 2010-11-04
EP2224558A1 (en) 2010-09-01
EP2224558B1 (en) 2017-08-16

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