WO2009060802A1 - 半導体レーザ素子 - Google Patents
半導体レーザ素子 Download PDFInfo
- Publication number
- WO2009060802A1 WO2009060802A1 PCT/JP2008/069914 JP2008069914W WO2009060802A1 WO 2009060802 A1 WO2009060802 A1 WO 2009060802A1 JP 2008069914 W JP2008069914 W JP 2008069914W WO 2009060802 A1 WO2009060802 A1 WO 2009060802A1
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- WO
- WIPO (PCT)
- Prior art keywords
- laser element
- semiconductor laser
- layer
- conductivity type
- groove section
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/168—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising current blocking layers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
- H01S5/222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties having a refractive index lower than that of the cladding layers or outer guiding layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/0014—Measuring characteristics or properties thereof
- H01S5/0021—Degradation or life time measurements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
- H01S5/0282—Passivation layers or treatments
- H01S5/0283—Optically inactive coating on the facet, e.g. half-wave coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
- H01S5/166—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface with window regions comprising non-semiconducting materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
- H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3214—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities comprising materials from other groups of the periodic system than the materials of the active layer, e.g. ZnSe claddings and GaAs active layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008801153115A CN101855798B (zh) | 2007-11-08 | 2008-10-31 | 半导体激光器元件 |
US12/742,075 US8548023B2 (en) | 2007-11-08 | 2008-10-31 | Semiconductor laser element |
EP08847356.6A EP2224558B1 (en) | 2007-11-08 | 2008-10-31 | Semiconductor laser element |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007290590A JP5444609B2 (ja) | 2007-11-08 | 2007-11-08 | 半導体レーザ素子 |
JP2007-290590 | 2007-11-08 | ||
JP2008203019A JP5223531B2 (ja) | 2008-08-06 | 2008-08-06 | 半導体レーザ素子 |
JP2008-203019 | 2008-08-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009060802A1 true WO2009060802A1 (ja) | 2009-05-14 |
Family
ID=40625695
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/069914 WO2009060802A1 (ja) | 2007-11-08 | 2008-10-31 | 半導体レーザ素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8548023B2 (ja) |
EP (1) | EP2224558B1 (ja) |
KR (1) | KR101548028B1 (ja) |
CN (1) | CN101855798B (ja) |
WO (1) | WO2009060802A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013157176A1 (ja) * | 2012-04-16 | 2013-10-24 | パナソニック株式会社 | 半導体発光素子 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8283652B2 (en) * | 2010-07-28 | 2012-10-09 | SemiLEDs Optoelectronics Co., Ltd. | Vertical light emitting diode (VLED) die having electrode frame and method of fabrication |
US8723160B2 (en) | 2010-07-28 | 2014-05-13 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode (LED) die having peripheral electrode frame and method of fabrication |
EP2741381B1 (en) * | 2012-12-06 | 2020-05-06 | Nichia Corporation | Semiconductor laser element |
JP6135559B2 (ja) * | 2014-03-10 | 2017-05-31 | ソニー株式会社 | 半導体発光素子および半導体発光素子の製造方法ならびに半導体素子 |
JP6409614B2 (ja) * | 2015-02-23 | 2018-10-24 | 日亜化学工業株式会社 | 半導体素子の製造方法及び半導体素子 |
DE102015116336B4 (de) * | 2015-09-28 | 2020-03-19 | Osram Opto Semiconductors Gmbh | Halbleiterlaser |
DE102015116335A1 (de) * | 2015-09-28 | 2017-03-30 | Osram Opto Semiconductors Gmbh | Halbleiterlaser |
DE112019000483T5 (de) * | 2018-01-23 | 2020-10-29 | Sony Semiconductor Solutions Corporation | Halbleiterlaser und elektronische vorrichtung |
JP7295371B2 (ja) * | 2018-08-31 | 2023-06-21 | 日亜化学工業株式会社 | 半導体レーザ素子 |
US20230104488A1 (en) * | 2021-10-06 | 2023-04-06 | Ii-Vi Delaware, Inc. | Control Of Current Spread In Semiconductor Laser Devices |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000068593A (ja) * | 1998-08-25 | 2000-03-03 | Mitsubishi Electric Corp | 半導体レーザ装置及びその製造方法 |
JP2002164617A (ja) * | 2000-09-18 | 2002-06-07 | Fuji Photo Film Co Ltd | 半導体レーザ素子 |
JP2003264335A (ja) * | 2002-03-11 | 2003-09-19 | Nec Corp | 外部共振器型波長可変パルス光源 |
JP2003332244A (ja) | 2002-05-13 | 2003-11-21 | Nichia Chem Ind Ltd | 窒化物半導体基板の製造方法 |
JP2004146527A (ja) * | 2002-10-23 | 2004-05-20 | Sharp Corp | 半導体レーザ素子とその製造方法 |
JP2004158500A (ja) | 2002-11-01 | 2004-06-03 | Nichia Chem Ind Ltd | 窒化物半導体、窒化物半導体基板、窒化物半導体素子及びそれらの製造方法 |
JP2005175056A (ja) | 2003-12-09 | 2005-06-30 | Nichia Chem Ind Ltd | 窒化物半導体基板および窒化物半導体レーザ素子 |
JP2006041491A (ja) | 2004-06-21 | 2006-02-09 | Matsushita Electric Ind Co Ltd | 半導体レーザ素子及びその製造方法 |
JP2007129236A (ja) | 2005-11-03 | 2007-05-24 | Samsung Electronics Co Ltd | 窒化物半導体レーザ素子及びその製造方法 |
JP2007184644A (ja) * | 2007-04-02 | 2007-07-19 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0258288A (ja) | 1988-08-23 | 1990-02-27 | Seiko Epson Corp | 半導体レーザ |
US5070509A (en) * | 1990-08-09 | 1991-12-03 | Eastman Kodak Company | Surface emitting, low threshold (SELTH) laser diode |
TW413958B (en) * | 1999-07-19 | 2000-12-01 | Ind Tech Res Inst | Semiconductor laser structure |
US6580738B2 (en) * | 1999-12-08 | 2003-06-17 | Fuji Photo Film Co., Ltd. | High-power semiconductor laser device in which near-edge portions of active layer are removed |
JP2002261379A (ja) * | 2001-03-02 | 2002-09-13 | Mitsubishi Electric Corp | 半導体デバイスおよびそれを応用した光半導体デバイス |
US6782024B2 (en) * | 2001-05-10 | 2004-08-24 | Bookham Technology Plc | High power semiconductor laser diode |
US6990132B2 (en) * | 2003-03-20 | 2006-01-24 | Xerox Corporation | Laser diode with metal-oxide upper cladding layer |
US7356060B2 (en) * | 2004-03-15 | 2008-04-08 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and method for fabricating the same |
US7279751B2 (en) * | 2004-06-21 | 2007-10-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and manufacturing method thereof |
-
2008
- 2008-10-31 EP EP08847356.6A patent/EP2224558B1/en active Active
- 2008-10-31 US US12/742,075 patent/US8548023B2/en active Active
- 2008-10-31 WO PCT/JP2008/069914 patent/WO2009060802A1/ja active Application Filing
- 2008-10-31 CN CN2008801153115A patent/CN101855798B/zh active Active
- 2008-10-31 KR KR1020107012530A patent/KR101548028B1/ko active IP Right Grant
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000068593A (ja) * | 1998-08-25 | 2000-03-03 | Mitsubishi Electric Corp | 半導体レーザ装置及びその製造方法 |
JP2002164617A (ja) * | 2000-09-18 | 2002-06-07 | Fuji Photo Film Co Ltd | 半導体レーザ素子 |
JP2003264335A (ja) * | 2002-03-11 | 2003-09-19 | Nec Corp | 外部共振器型波長可変パルス光源 |
JP2003332244A (ja) | 2002-05-13 | 2003-11-21 | Nichia Chem Ind Ltd | 窒化物半導体基板の製造方法 |
JP2004146527A (ja) * | 2002-10-23 | 2004-05-20 | Sharp Corp | 半導体レーザ素子とその製造方法 |
JP2004158500A (ja) | 2002-11-01 | 2004-06-03 | Nichia Chem Ind Ltd | 窒化物半導体、窒化物半導体基板、窒化物半導体素子及びそれらの製造方法 |
JP2005175056A (ja) | 2003-12-09 | 2005-06-30 | Nichia Chem Ind Ltd | 窒化物半導体基板および窒化物半導体レーザ素子 |
JP2006041491A (ja) | 2004-06-21 | 2006-02-09 | Matsushita Electric Ind Co Ltd | 半導体レーザ素子及びその製造方法 |
JP2007129236A (ja) | 2005-11-03 | 2007-05-24 | Samsung Electronics Co Ltd | 窒化物半導体レーザ素子及びその製造方法 |
JP2007184644A (ja) * | 2007-04-02 | 2007-07-19 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
Non-Patent Citations (1)
Title |
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See also references of EP2224558A4 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013157176A1 (ja) * | 2012-04-16 | 2013-10-24 | パナソニック株式会社 | 半導体発光素子 |
CN103477513A (zh) * | 2012-04-16 | 2013-12-25 | 松下电器产业株式会社 | 半导体发光元件 |
JP5608815B2 (ja) * | 2012-04-16 | 2014-10-15 | パナソニック株式会社 | 半導体発光素子 |
JPWO2013157176A1 (ja) * | 2012-04-16 | 2015-12-21 | パナソニック株式会社 | 半導体発光素子 |
Also Published As
Publication number | Publication date |
---|---|
EP2224558A4 (en) | 2013-05-22 |
KR20100086037A (ko) | 2010-07-29 |
CN101855798B (zh) | 2013-02-27 |
KR101548028B1 (ko) | 2015-08-27 |
CN101855798A (zh) | 2010-10-06 |
US8548023B2 (en) | 2013-10-01 |
US20100278207A1 (en) | 2010-11-04 |
EP2224558A1 (en) | 2010-09-01 |
EP2224558B1 (en) | 2017-08-16 |
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