WO2009054529A1 - 石英ガラスルツボとその製造方法およびその用途 - Google Patents

石英ガラスルツボとその製造方法およびその用途 Download PDF

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Publication number
WO2009054529A1
WO2009054529A1 PCT/JP2008/069482 JP2008069482W WO2009054529A1 WO 2009054529 A1 WO2009054529 A1 WO 2009054529A1 JP 2008069482 W JP2008069482 W JP 2008069482W WO 2009054529 A1 WO2009054529 A1 WO 2009054529A1
Authority
WO
WIPO (PCT)
Prior art keywords
quartz glass
glass crucible
application
single crystal
silicon single
Prior art date
Application number
PCT/JP2008/069482
Other languages
English (en)
French (fr)
Inventor
Masaru Sato
Original Assignee
Japan Super Quartz Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Super Quartz Corporation filed Critical Japan Super Quartz Corporation
Priority to SG2008088726A priority Critical patent/SG172748A1/en
Priority to US12/303,140 priority patent/US20100319609A1/en
Priority to EP08825824.9A priority patent/EP2267192B1/en
Publication of WO2009054529A1 publication Critical patent/WO2009054529A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/09—Other methods of shaping glass by fusing powdered glass in a shaping mould
    • C03B19/095—Other methods of shaping glass by fusing powdered glass in a shaping mould by centrifuging, e.g. arc discharge in rotating mould
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B20/00—Processes specially adapted for the production of quartz or fused silica articles, not otherwise provided for
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Glass Melting And Manufacturing (AREA)

Abstract

　このシリコン単結晶引き上げ用の石英ガラスルツボは、シリコン単結晶引き上げ初期の湯面振動が抑制され、シリコン単結晶の肩部を安定に形成することができ、シリコン単結晶の高い単結晶化率を達成することができる。
PCT/JP2008/069482 2007-10-25 2008-10-27 石英ガラスルツボとその製造方法およびその用途 WO2009054529A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
SG2008088726A SG172748A1 (en) 2007-10-25 2008-10-27 Vitreous silica crucible, method of manufacturing the same, and use thereof
US12/303,140 US20100319609A1 (en) 2007-10-25 2008-10-27 Vitreous silica crucible, method of manufacturing the same, and use thereof
EP08825824.9A EP2267192B1 (en) 2007-10-25 2008-10-27 Method of pulling single crystal silicon using a vitreous silica crucible and method for manufacturing quartz glass crucible

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007277368A JP5273512B2 (ja) 2007-10-25 2007-10-25 石英ガラスルツボとその製造方法および用途
JP2007-277368 2007-10-25

Publications (1)

Publication Number Publication Date
WO2009054529A1 true WO2009054529A1 (ja) 2009-04-30

Family

ID=40579630

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/069482 WO2009054529A1 (ja) 2007-10-25 2008-10-27 石英ガラスルツボとその製造方法およびその用途

Country Status (7)

Country Link
US (1) US20100319609A1 (ja)
EP (1) EP2267192B1 (ja)
JP (1) JP5273512B2 (ja)
KR (1) KR20100088719A (ja)
SG (1) SG172748A1 (ja)
TW (1) TW200936820A (ja)
WO (1) WO2009054529A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011071176A1 (ja) * 2009-12-11 2011-06-16 ジャパンスーパークォーツ株式会社 シリカガラスルツボ
CN102906037A (zh) * 2010-05-27 2013-01-30 赫罗伊斯石英玻璃股份有限两合公司 石英玻璃坩埚及其制造方法
DE102012109181A1 (de) 2012-09-27 2014-03-27 Heraeus Quarzglas Gmbh & Co. Kg Ziehen eines Halbleiter-Einkristalls nach dem Czochralski-Verfahren und dafür geeigneter Quarzglastiegel
WO2019009018A1 (ja) * 2017-07-04 2019-01-10 株式会社Sumco 石英ガラスルツボ
JP2019172515A (ja) * 2018-03-28 2019-10-10 三菱ケミカル株式会社 合成シリカガラス粉

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5453679B2 (ja) * 2009-10-02 2014-03-26 株式会社Ｓｕｍｃｏ シリカガラスルツボの製造装置及びシリカガラスルツボの製造方法
JP5447946B2 (ja) * 2009-11-18 2014-03-19 株式会社Ｓｕｍｃｏ シリコン単結晶引き上げ用石英ガラスルツボおよびその製造方法
US20120267280A1 (en) * 2011-04-25 2012-10-25 Glen Bennett Cook Vessel for molten semiconducting materials and methods of making the same
US8281620B1 (en) * 2011-04-27 2012-10-09 Japan Super Quartz Corporation Apparatus for manufacturing vitreous silica crucible
US9328009B2 (en) 2011-05-13 2016-05-03 Sumco Corporation Vitreous silica crucible for pulling silicon single crystal, and method for manufacturing the same
KR101358119B1 (ko) 2012-01-31 2014-02-07 삼성중공업 주식회사 가변피치프로펠러의 구동장치 및 피치각 제어방법, 이를 갖는 선박
JP2022180695A (ja) * 2021-05-25 2022-12-07 株式会社Sumco 石英ガラスルツボ及びその製造方法並びにシリコン単結晶の製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0255285A (ja) 1988-08-19 1990-02-23 Nippon Kojundo Sekiei Kk 石英ルツボの製造方法
JPH05105577A (ja) * 1990-06-25 1993-04-27 Shinetsu Quartz Prod Co Ltd シリコン単結晶引き上げ用石英ガラスルツボとその製造方法
JPH0812359A (ja) * 1994-06-30 1996-01-16 Shinetsu Quartz Prod Co Ltd 石英ガラスルツボ及びその製造方法
JPH1017391A (ja) 1997-03-21 1998-01-20 Mitsubishi Material Quartz Kk 石英ルツボ製造装置
JP2923720B2 (ja) 1992-12-26 1999-07-26 三菱マテリアルクォーツ株式会社 シリコン単結晶引上げ用石英ルツボ
JP2002284596A (ja) * 2001-03-28 2002-10-03 Japan Siper Quarts Corp 合成石英によって内表面を部分的に被覆した石英ガラスルツボ
JP2004250304A (ja) 2003-02-21 2004-09-09 Japan Siper Quarts Corp 湯面振動を抑制した石英ガラスルツボ
JP2005289710A (ja) * 2004-03-31 2005-10-20 Toshiba Ceramics Co Ltd シリカガラス製容器成型体の成型装置及び成型方法並びにシリカガラス製容器の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2973057B2 (ja) * 1992-06-23 1999-11-08 三菱マテリアルクォーツ株式会社 シリコン単結晶引上げ用石英ルツボとその製造方法
JP4054434B2 (ja) * 1998-03-31 2008-02-27 コバレントマテリアル株式会社 シリコン単結晶引上げ用石英ガラスルツボおよびその製造方法
JP4398527B2 (ja) * 1998-05-25 2010-01-13 信越石英株式会社 シリコン単結晶引き上げ用石英ガラスるつぼ

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0255285A (ja) 1988-08-19 1990-02-23 Nippon Kojundo Sekiei Kk 石英ルツボの製造方法
JPH05105577A (ja) * 1990-06-25 1993-04-27 Shinetsu Quartz Prod Co Ltd シリコン単結晶引き上げ用石英ガラスルツボとその製造方法
JP2923720B2 (ja) 1992-12-26 1999-07-26 三菱マテリアルクォーツ株式会社 シリコン単結晶引上げ用石英ルツボ
JPH0812359A (ja) * 1994-06-30 1996-01-16 Shinetsu Quartz Prod Co Ltd 石英ガラスルツボ及びその製造方法
JPH1017391A (ja) 1997-03-21 1998-01-20 Mitsubishi Material Quartz Kk 石英ルツボ製造装置
JP2002284596A (ja) * 2001-03-28 2002-10-03 Japan Siper Quarts Corp 合成石英によって内表面を部分的に被覆した石英ガラスルツボ
JP2004250304A (ja) 2003-02-21 2004-09-09 Japan Siper Quarts Corp 湯面振動を抑制した石英ガラスルツボ
JP2005289710A (ja) * 2004-03-31 2005-10-20 Toshiba Ceramics Co Ltd シリカガラス製容器成型体の成型装置及び成型方法並びにシリカガラス製容器の製造方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011071176A1 (ja) * 2009-12-11 2011-06-16 ジャパンスーパークォーツ株式会社 シリカガラスルツボ
JP4875229B2 (ja) * 2009-12-11 2012-02-15 ジャパンスーパークォーツ株式会社 シリカガラスルツボ
US9115445B2 (en) 2009-12-11 2015-08-25 Sumco Corporation Vitreous silica crucible
CN102906037A (zh) * 2010-05-27 2013-01-30 赫罗伊斯石英玻璃股份有限两合公司 石英玻璃坩埚及其制造方法
DE102012109181A1 (de) 2012-09-27 2014-03-27 Heraeus Quarzglas Gmbh & Co. Kg Ziehen eines Halbleiter-Einkristalls nach dem Czochralski-Verfahren und dafür geeigneter Quarzglastiegel
WO2014048791A1 (de) 2012-09-27 2014-04-03 Heraeus Quarzglas Gmbh & Co. Kg Ziehen eines halbleiter-einkristalls nach dem czochralski-verfahren und dafür geeigneter quarzglastiegel
US9856576B2 (en) 2012-09-27 2018-01-02 Heraeus Quarzglas Gmbh & Co. Kg Pulling a semiconductor single crystal according to the Czochralski method
DE102012109181B4 (de) 2012-09-27 2018-06-28 Heraeus Quarzglas Gmbh & Co. Kg Ziehen eines Halbleiter-Einkristalls nach dem Czochralski-Verfahren und dafür geeigneter Quarzglastiegel
US10287705B2 (en) 2012-09-27 2019-05-14 Heraeus Quarzglas Gmbh & Co. Kg Pulling a semiconductor single crystal according to the Czochralski method and silica glass crucible suitable therefor
WO2019009018A1 (ja) * 2017-07-04 2019-01-10 株式会社Sumco 石英ガラスルツボ
JPWO2019009018A1 (ja) * 2017-07-04 2020-06-18 株式会社Sumco 石英ガラスルツボ
JP2019172515A (ja) * 2018-03-28 2019-10-10 三菱ケミカル株式会社 合成シリカガラス粉

Also Published As

Publication number Publication date
KR20100088719A (ko) 2010-08-11
JP2009102206A (ja) 2009-05-14
SG172748A1 (en) 2012-10-30
US20100319609A1 (en) 2010-12-23
EP2267192B1 (en) 2013-07-31
EP2267192A4 (en) 2011-03-30
TW200936820A (en) 2009-09-01
JP5273512B2 (ja) 2013-08-28
EP2267192A1 (en) 2010-12-29

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