WO2009047883A1 - 撮像装置 - Google Patents

撮像装置 Download PDF

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Publication number
WO2009047883A1
WO2009047883A1 PCT/JP2008/002661 JP2008002661W WO2009047883A1 WO 2009047883 A1 WO2009047883 A1 WO 2009047883A1 JP 2008002661 W JP2008002661 W JP 2008002661W WO 2009047883 A1 WO2009047883 A1 WO 2009047883A1
Authority
WO
WIPO (PCT)
Prior art keywords
clip
voltage
drive circuit
column amplifiers
signal
Prior art date
Application number
PCT/JP2008/002661
Other languages
English (en)
French (fr)
Inventor
Takakazu Kobayashi
Original Assignee
Nikon Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corporation filed Critical Nikon Corporation
Priority to CN2008801106966A priority Critical patent/CN101822041B/zh
Priority to JP2009536916A priority patent/JP5251881B2/ja
Publication of WO2009047883A1 publication Critical patent/WO2009047883A1/ja
Priority to US12/753,513 priority patent/US8134622B2/en

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/627—Detection or reduction of inverted contrast or eclipsing effects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

　２次元（マトリクス）状に配置され、光を電気信号に変換する光電変換部を有する単位画素と、複数の前記単位画素と列方向に接続され、前記単位画素から、光情報を含む光信号とノイズ成分を含むリセット信号とを受け取る複数の垂直信号線と、前記垂直信号線に読み出された前記光信号および前記リセット信号を増幅するカラムアンプと、前記カラムアンプで増幅された前記光信号および前記リセット信号をそれぞれ保持する保持部とを有する撮像装置であって、前記垂直信号線と前記カラムアンプとの間に配置され、所定電圧外の信号をクリップする第１のクリップ駆動回路と、前記第１のクリップ駆動回路にクリップ電圧を与える第１のクリップ電圧発生回路と、前記カラムアンプと前記保持部との間に配置され、所定電圧外の信号をクリップする第２のクリップ駆動回路と、前記第２のクリップ駆動回路にクリップ電圧を与える第２のクリップ電圧発生回路とを設けた。
PCT/JP2008/002661 2007-10-09 2008-09-25 撮像装置 WO2009047883A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008801106966A CN101822041B (zh) 2007-10-09 2008-09-25 摄影装置
JP2009536916A JP5251881B2 (ja) 2007-10-09 2008-09-25 撮像装置
US12/753,513 US8134622B2 (en) 2007-10-09 2010-04-02 Imaging device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007263576 2007-10-09
JP2007-263576 2007-10-09

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/753,513 Continuation US8134622B2 (en) 2007-10-09 2010-04-02 Imaging device

Publications (1)

Publication Number Publication Date
WO2009047883A1 true WO2009047883A1 (ja) 2009-04-16

Family

ID=40549036

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002661 WO2009047883A1 (ja) 2007-10-09 2008-09-25 撮像装置

Country Status (4)

Country Link
US (1) US8134622B2 (ja)
JP (1) JP5251881B2 (ja)
CN (1) CN101822041B (ja)
WO (1) WO2009047883A1 (ja)

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WO2024042863A1 (ja) * 2022-08-25 2024-02-29 ソニーセミコンダクタソリューションズ株式会社 撮像装置

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JP4958666B2 (ja) * 2007-07-12 2012-06-20 キヤノン株式会社 撮像装置及びその制御方法
JP2009038531A (ja) * 2007-07-31 2009-02-19 Panasonic Corp 固体撮像装置及びその駆動方法
JP5018539B2 (ja) * 2008-02-18 2012-09-05 株式会社ニコン 撮像装置
WO2013099265A1 (ja) * 2011-12-28 2013-07-04 株式会社ニコン 固体撮像素子および撮像装置
US9391574B2 (en) * 2012-06-01 2016-07-12 Forza Silicon Corporation Power supply regulation for programmable gain amplifier used in a CMOS image sensor
JP6319946B2 (ja) * 2013-04-18 2018-05-09 キヤノン株式会社 固体撮像装置及び撮像システム
US9360511B2 (en) 2013-10-21 2016-06-07 Qualcomm Mems Technologies, Inc. Closed loop dynamic capacitance measurement
JP6581412B2 (ja) * 2015-07-15 2019-09-25 キヤノン株式会社 撮像装置
US10523885B2 (en) * 2016-12-20 2019-12-31 Foveon, Inc. Column line clamp circuit for imaging array
JP6578454B2 (ja) * 2017-01-10 2019-09-18 富士フイルム株式会社 ノイズ処理装置及びノイズ処理方法

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JP2005252529A (ja) * 2004-03-03 2005-09-15 Sony Corp 固体撮像装置、画素信号読出方法
JP2006222708A (ja) * 2005-02-10 2006-08-24 Matsushita Electric Ind Co Ltd 黒つぶれ補正回路および固体撮像装置
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024042863A1 (ja) * 2022-08-25 2024-02-29 ソニーセミコンダクタソリューションズ株式会社 撮像装置

Also Published As

Publication number Publication date
JP5251881B2 (ja) 2013-07-31
JPWO2009047883A1 (ja) 2011-02-17
US20100188539A1 (en) 2010-07-29
CN101822041A (zh) 2010-09-01
CN101822041B (zh) 2012-06-20
US8134622B2 (en) 2012-03-13

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