WO2009034978A1 - イメージセンサ - Google Patents

イメージセンサ Download PDF

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Publication number
WO2009034978A1
WO2009034978A1 PCT/JP2008/066281 JP2008066281W WO2009034978A1 WO 2009034978 A1 WO2009034978 A1 WO 2009034978A1 JP 2008066281 W JP2008066281 W JP 2008066281W WO 2009034978 A1 WO2009034978 A1 WO 2009034978A1
Authority
WO
WIPO (PCT)
Prior art keywords
pixel
charge
period
executed
accumulation
Prior art date
Application number
PCT/JP2008/066281
Other languages
English (en)
French (fr)
Inventor
Kenichi Takamiya
Ken Koseki
Original Assignee
Sony Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corporation filed Critical Sony Corporation
Priority to CN200880105458.6A priority Critical patent/CN101796820B/zh
Priority to EP08830176A priority patent/EP2190188A4/en
Priority to US12/676,092 priority patent/US9111837B2/en
Publication of WO2009034978A1 publication Critical patent/WO2009034978A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/44—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by partially reading an SSIS array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/623—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by evacuation via the output or reset lines
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/74—Circuitry for scanning or addressing the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/767—Horizontal readout lines, multiplexers or registers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/778—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising amplifiers shared between a plurality of pixels, i.e. at least one part of the amplifier must be on the sensor array itself
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/779—Circuitry for scanning or addressing the pixel array

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

本発明は、簡単な構成で、良質な画像を得ることができるイメージセンサに関する。 画素は、入射光を光電変換して電荷を蓄積し、電荷に応じた画素信号を出力する。垂直走査回路は、画素を制御し、画素に蓄積されている不要な電荷を排出させるシャッタ処理、所定の露光時間で光電変換された電荷を画素に蓄積させる電荷蓄積処理、および、電荷蓄積処理で画素に蓄積されている電荷に応じた画素信号を出力させるリード処理を行わせる。また、制御手段は、シャッタ処理が行われる期間、電荷蓄積処理が行われる期間、およびリード処理が行われる期間以外の期間である非蓄積期間に、画素で光電変換される電荷を排出させる。本発明は、例えば、CMOSセンサに適用できる。
PCT/JP2008/066281 2007-09-10 2008-09-10 イメージセンサ WO2009034978A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN200880105458.6A CN101796820B (zh) 2007-09-10 2008-09-10 图像传感器
EP08830176A EP2190188A4 (en) 2007-09-10 2008-09-10 BlLDSENSOR
US12/676,092 US9111837B2 (en) 2007-09-10 2008-09-10 Image sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007233662A JP5262028B2 (ja) 2007-09-10 2007-09-10 イメージセンサおよび制御方法
JP2007-233662 2007-09-10

Publications (1)

Publication Number Publication Date
WO2009034978A1 true WO2009034978A1 (ja) 2009-03-19

Family

ID=40451985

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/066281 WO2009034978A1 (ja) 2007-09-10 2008-09-10 イメージセンサ

Country Status (7)

Country Link
US (1) US9111837B2 (ja)
EP (1) EP2190188A4 (ja)
JP (1) JP5262028B2 (ja)
KR (1) KR20100051706A (ja)
CN (1) CN101796820B (ja)
TW (1) TWI430658B (ja)
WO (1) WO2009034978A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011007727A1 (ja) * 2009-07-15 2011-01-20 株式会社ニコン 固体撮像素子
WO2011114450A1 (ja) * 2010-03-17 2011-09-22 キヤノン株式会社 撮像装置および撮像システム
CN103545333A (zh) * 2009-10-30 2014-01-29 索尼公司 固体摄像器件和电子设备

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101784676B1 (ko) 2010-03-08 2017-10-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조방법
JP5631058B2 (ja) * 2010-05-20 2014-11-26 キヤノン株式会社 撮像装置、撮像システムおよび撮像装置の駆動方法
JP5598126B2 (ja) 2010-07-09 2014-10-01 ソニー株式会社 固体撮像素子およびカメラシステム
EP2664268B1 (en) * 2011-06-21 2016-04-27 Olympus Corporation Medical instrument
JP5448208B2 (ja) * 2011-12-13 2014-03-19 国立大学法人東北大学 固体撮像装置
JP2014039159A (ja) * 2012-08-16 2014-02-27 Sony Corp 固体撮像装置および駆動方法、並びに電子機器
JP2014143498A (ja) * 2013-01-22 2014-08-07 Toshiba Corp 固体撮像装置
US9100600B2 (en) 2013-07-10 2015-08-04 Samsung Electronics Co., Ltd. Anti-blooming shutter control in image sensors
JP2015026977A (ja) * 2013-07-26 2015-02-05 株式会社東芝 固体撮像装置
KR102211899B1 (ko) * 2013-11-18 2021-02-03 가부시키가이샤 니콘 고체 촬상 소자 및 촬상 장치
JP6406856B2 (ja) * 2014-04-07 2018-10-17 キヤノン株式会社 撮像装置及びその制御方法
KR102407036B1 (ko) 2015-11-03 2022-06-10 삼성전자주식회사 이미지 센서 및 이미지 센서의 동작 방법
CN106791461B (zh) * 2016-11-25 2019-10-18 维沃移动通信有限公司 一种曝光控制方法、曝光控制电路及移动终端
US20220179088A1 (en) * 2019-03-08 2022-06-09 Brookman Technology, Inc. Range image sensor and range image pickup device
CN111757026B (zh) * 2020-08-05 2022-06-21 锐芯微电子股份有限公司 图像传感器像素结构

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08195908A (ja) * 1994-10-11 1996-07-30 At & T Corp 能動画素画像センサ
JP2000350103A (ja) * 1999-06-02 2000-12-15 Canon Inc 光電変換装置
US20040021058A1 (en) 2002-07-30 2004-02-05 Drowley Clifford I. System, circuit and method providing a dynamic range pixel cell with blooming protection
US20050151866A1 (en) 2004-01-13 2005-07-14 Haruhisa Ando Wide dynamic range operations for imaging
WO2006073875A2 (en) 2005-01-06 2006-07-13 Recon/Optical, Inc. Cmos active pixel sensor with improved dynamic range and method of operation, method for identifying moving objects and hybrid array with ir detector
JP2007158741A (ja) * 2005-12-06 2007-06-21 Olympus Corp 固体撮像装置

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3031606B2 (ja) 1995-08-02 2000-04-10 キヤノン株式会社 固体撮像装置と画像撮像装置
JP3834841B2 (ja) 1995-08-03 2006-10-18 株式会社日立製作所 固体撮像素子
JP3791708B2 (ja) * 1996-05-20 2006-06-28 オリンパス株式会社 固体撮像装置
JP4672976B2 (ja) 1998-11-02 2011-04-20 キヤノン株式会社 固体撮像装置
JP3796412B2 (ja) * 2000-02-28 2006-07-12 キヤノン株式会社 撮像装置
JP2002320143A (ja) * 2001-04-23 2002-10-31 Olympus Optical Co Ltd 撮像装置
ITUD20020084A1 (it) * 2002-04-12 2003-10-13 Neuricam Spa Dispositivo elettronico selezionatore per sensori elettro-ottici
JP4117540B2 (ja) 2002-10-17 2008-07-16 ソニー株式会社 固体撮像素子の制御方法
KR100562489B1 (ko) 2002-11-11 2006-03-21 삼성전자주식회사 셔터 타이밍 조절 가능한 로우 디코더를 갖는 이미지 센서
US7489352B2 (en) * 2002-11-15 2009-02-10 Micron Technology, Inc. Wide dynamic range pinned photodiode active pixel sensor (APS)
JP2005065184A (ja) 2003-08-20 2005-03-10 Canon Inc 固体撮像装置及びその駆動方法、並びにそれを用いたビデオカメラ及びスチルカメラ
US7542085B2 (en) * 2003-11-26 2009-06-02 Aptina Imaging Corporation Image sensor with a capacitive storage node linked to transfer gate
US20050128327A1 (en) * 2003-12-10 2005-06-16 Bencuya Selim S. Device and method for image sensing
JP3814609B2 (ja) * 2003-12-12 2006-08-30 キヤノン株式会社 撮像装置、及び撮像装置の駆動方法
US7196304B2 (en) * 2004-01-29 2007-03-27 Micron Technology, Inc. Row driver for selectively supplying operating power to imager pixel
US20060102827A1 (en) * 2004-11-17 2006-05-18 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device
JP4340660B2 (ja) * 2005-04-14 2009-10-07 シャープ株式会社 増幅型固体撮像装置
JP4455409B2 (ja) * 2005-06-02 2010-04-21 キヤノン株式会社 走査回路及びその制御方法
US7432540B2 (en) * 2005-08-01 2008-10-07 Micron Technology, Inc. Dual conversion gain gate and capacitor combination
US20070035649A1 (en) * 2005-08-10 2007-02-15 Micron Technology, Inc. Image pixel reset through dual conversion gain gate
JP2007158740A (ja) * 2005-12-06 2007-06-21 Olympus Corp 固体撮像装置
US7982790B2 (en) * 2006-01-16 2011-07-19 Panasonic Corporation Solid-state imaging apparatus and method for driving the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08195908A (ja) * 1994-10-11 1996-07-30 At & T Corp 能動画素画像センサ
JP2000350103A (ja) * 1999-06-02 2000-12-15 Canon Inc 光電変換装置
US20040021058A1 (en) 2002-07-30 2004-02-05 Drowley Clifford I. System, circuit and method providing a dynamic range pixel cell with blooming protection
US20050151866A1 (en) 2004-01-13 2005-07-14 Haruhisa Ando Wide dynamic range operations for imaging
WO2006073875A2 (en) 2005-01-06 2006-07-13 Recon/Optical, Inc. Cmos active pixel sensor with improved dynamic range and method of operation, method for identifying moving objects and hybrid array with ir detector
JP2007158741A (ja) * 2005-12-06 2007-06-21 Olympus Corp 固体撮像装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2190188A4

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011007727A1 (ja) * 2009-07-15 2011-01-20 株式会社ニコン 固体撮像素子
CN103545333A (zh) * 2009-10-30 2014-01-29 索尼公司 固体摄像器件和电子设备
WO2011114450A1 (ja) * 2010-03-17 2011-09-22 キヤノン株式会社 撮像装置および撮像システム
CN102804755A (zh) * 2010-03-17 2012-11-28 佳能株式会社 图像拾取器件和图像拾取系统
US8497921B2 (en) 2010-03-17 2013-07-30 Canon Kabushiki Kaisha Image pickup device and image pickup system
JP5631384B2 (ja) * 2010-03-17 2014-11-26 キヤノン株式会社 撮像装置および撮像システム
CN102804755B (zh) * 2010-03-17 2015-04-01 佳能株式会社 图像拾取器件和图像拾取系统

Also Published As

Publication number Publication date
JP5262028B2 (ja) 2013-08-14
KR20100051706A (ko) 2010-05-17
US9111837B2 (en) 2015-08-18
US20100182469A1 (en) 2010-07-22
CN101796820B (zh) 2014-03-05
JP2009065585A (ja) 2009-03-26
TWI430658B (zh) 2014-03-11
EP2190188A1 (en) 2010-05-26
EP2190188A4 (en) 2012-01-11
TW200931962A (en) 2009-07-16
CN101796820A (zh) 2010-08-04

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