WO2009031584A1 - 深紫外半導体光デバイス - Google Patents

深紫外半導体光デバイス Download PDF

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Publication number
WO2009031584A1
WO2009031584A1 PCT/JP2008/065887 JP2008065887W WO2009031584A1 WO 2009031584 A1 WO2009031584 A1 WO 2009031584A1 JP 2008065887 W JP2008065887 W JP 2008065887W WO 2009031584 A1 WO2009031584 A1 WO 2009031584A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
space
substrate
anode substrate
cathode substrate
Prior art date
Application number
PCT/JP2008/065887
Other languages
English (en)
French (fr)
Inventor
Takashi Kita
Original Assignee
National University Corporation Kobe University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National University Corporation Kobe University filed Critical National University Corporation Kobe University
Priority to EP08829401A priority Critical patent/EP2259286A4/en
Priority to CN200880114647A priority patent/CN101842869A/zh
Priority to JP2009531262A priority patent/JP4555899B2/ja
Priority to US12/675,989 priority patent/US8120238B2/en
Publication of WO2009031584A1 publication Critical patent/WO2009031584A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/0883—Arsenides; Nitrides; Phosphides
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/77066—Aluminium Nitrides or Aluminium Oxynitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J63/00—Cathode-ray or electron-stream lamps
    • H01J63/02—Details, e.g. electrode, gas filling, shape of vessel
    • H01J63/04—Vessels provided with luminescent coatings; Selection of materials for the coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J63/00—Cathode-ray or electron-stream lamps
    • H01J63/06—Lamps with luminescent screen excited by the ray or stream

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Discharge Lamps And Accessories Thereof (AREA)
  • Luminescent Compositions (AREA)
  • Vessels And Coating Films For Discharge Lamps (AREA)

Abstract

紫外光源として利用されている現在の水銀ランプは小型化できず、また発光ダイオードも３６５ｎｍ以下は実用レベルにない状況下、大面積高輝度の深紫外光源デバイスを提供する。 窒化アルミニウムをホスト材料としてガドリニウム（Ｇｄ）等の希土類金属イオンを添加した紫外蛍光体薄膜を有するアノード基板と、電界電子放出材料薄膜を有するカソード基板と、アノード基板とカソード基板とを対向して配設させ、基板間の空隙を真空雰囲気に保持させるスペーサと、アノード基板とカソード基板の間に電界を印加させる電圧回路とを少なくとも有し、アノード基板とカソード基板の間の空隙を真空チャネル領域とし、基板間に電界を印加することにより電界電子放出材料薄膜からの電子を紫外蛍光体薄膜に注入させて発光させる。  
PCT/JP2008/065887 2007-09-03 2008-09-03 深紫外半導体光デバイス WO2009031584A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP08829401A EP2259286A4 (en) 2007-09-03 2008-09-03 DEEP ULTRAVIOLET SEMICONDUCTOR OPTICAL DEVICE
CN200880114647A CN101842869A (zh) 2007-09-03 2008-09-03 深紫外半导体发光装置
JP2009531262A JP4555899B2 (ja) 2007-09-03 2008-09-03 深紫外半導体光デバイス
US12/675,989 US8120238B2 (en) 2007-09-03 2008-09-03 Deep ultraviolet semiconductor optical device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-228388 2007-09-03
JP2007228388 2007-09-03

Publications (1)

Publication Number Publication Date
WO2009031584A1 true WO2009031584A1 (ja) 2009-03-12

Family

ID=40428898

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065887 WO2009031584A1 (ja) 2007-09-03 2008-09-03 深紫外半導体光デバイス

Country Status (6)

Country Link
US (1) US8120238B2 (ja)
EP (1) EP2259286A4 (ja)
JP (1) JP4555899B2 (ja)
KR (1) KR101478391B1 (ja)
CN (1) CN101842869A (ja)
WO (1) WO2009031584A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009238415A (ja) * 2008-03-26 2009-10-15 Kobe Univ 深紫外蛍光薄膜および深紫外蛍光薄膜を用いたランプ
WO2011027881A1 (ja) * 2009-09-07 2011-03-10 国立大学法人名古屋工業大学 真空紫外発光デバイス
JP2011055898A (ja) * 2009-09-07 2011-03-24 Nagoya Institute Of Technology 殺菌用光源
WO2012147743A1 (ja) * 2011-04-25 2012-11-01 浜松ホトニクス株式会社 紫外光発生用ターゲット、電子線励起紫外光源、及び紫外光発生用ターゲットの製造方法
WO2012147744A1 (ja) * 2011-04-25 2012-11-01 浜松ホトニクス株式会社 紫外光発生用ターゲット、電子線励起紫外光源、及び紫外光発生用ターゲットの製造方法
US9278870B2 (en) 2014-01-21 2016-03-08 Panasonic Corporation Ultraviolet irradiation apparatus and ultraviolet irradiation method

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI458808B (zh) * 2011-08-26 2014-11-01 Au Optronics Corp 螢光粉之成分及其合成方法及使用此螢光粉之電子裝置
JP5569987B2 (ja) 2012-05-25 2014-08-13 双葉電子工業株式会社 紫外線発光材料及び紫外線光源
JP5580865B2 (ja) 2012-10-23 2014-08-27 浜松ホトニクス株式会社 紫外光発生用ターゲット、電子線励起紫外光源、及び紫外光発生用ターゲットの製造方法
JP5580866B2 (ja) 2012-10-23 2014-08-27 浜松ホトニクス株式会社 紫外光発生用ターゲット、電子線励起紫外光源、及び紫外光発生用ターゲットの製造方法
JP6029926B2 (ja) 2012-10-23 2016-11-24 浜松ホトニクス株式会社 紫外光発生用ターゲット、電子線励起紫外光源、及び紫外光発生用ターゲットの製造方法
WO2014155335A2 (en) * 2013-03-28 2014-10-02 Empire Technology Development Llc Methods and compositions for producing polarized light
CN108139504B (zh) * 2015-09-22 2020-07-17 光学实验室公司（瑞典） 紫外灯的提取结构
SE539934C2 (en) * 2016-06-22 2018-01-23 Lightlab Sweden Ab System for treating a fluid with non-mercury-based UV light
CN108231532A (zh) * 2017-12-31 2018-06-29 上海极优威光电科技有限公司 一种电子束激发荧光粉的深紫外光源
CN108194844B (zh) * 2017-12-31 2022-02-25 上海极优威光电科技有限公司 一种电子束激发荧光粉的深紫外光源
CN111524787A (zh) * 2020-03-31 2020-08-11 中山大学 一种纳米冷阴极平板紫外光源器件及制备方法
CN112216597A (zh) * 2020-09-15 2021-01-12 天津迈刻微科电子科技有限公司 微型紫外光源及制备方法
CN112687520B (zh) * 2020-12-16 2021-09-24 中山大学 一种空间电子激发的反射式深紫外光源

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005054182A (ja) * 2003-07-24 2005-03-03 Toyo Aluminium Kk 窒化アルミニウム系蛍光体及びその製造方法
JP2006079873A (ja) * 2004-09-08 2006-03-23 National Institute For Materials Science 深紫外線固体発光装置
JP2006199876A (ja) * 2005-01-21 2006-08-03 Toyo Aluminium Kk 窒化アルミニウム系蛍光体

Family Cites Families (4)

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JP2000173775A (ja) * 1998-12-03 2000-06-23 Sony Corp 紫外発光エレクトロルミネッセンス素子及びその製造方法
JP2005116232A (ja) * 2003-10-03 2005-04-28 Ngk Insulators Ltd 電子放出素子及びその製造方法
JP5011523B2 (ja) * 2005-03-28 2012-08-29 国立大学法人神戸大学 有機フィールドエミッションデバイス
JP2008108759A (ja) * 2006-10-23 2008-05-08 Ritsumeikan 窒化物材料製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005054182A (ja) * 2003-07-24 2005-03-03 Toyo Aluminium Kk 窒化アルミニウム系蛍光体及びその製造方法
JP2006079873A (ja) * 2004-09-08 2006-03-23 National Institute For Materials Science 深紫外線固体発光装置
JP2006199876A (ja) * 2005-01-21 2006-08-03 Toyo Aluminium Kk 窒化アルミニウム系蛍光体

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
K. MORIMOTO: "Phosphor Handbook", 1999, CRC PRESS, article "Phosphors for vacuum fluorescent displays and field emission displays''; ''chapter eight - sections one and two", pages: 561 - 580
See also references of EP2259286A4
U. VETTER ET AL.: "Intense ultraviolet cathodoluminescence at 318 nm from Gd3+.doped AIN", APPLIED PHYSICS LETTERS, vol. 83, 2003, pages 2145 - 2147

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009238415A (ja) * 2008-03-26 2009-10-15 Kobe Univ 深紫外蛍光薄膜および深紫外蛍光薄膜を用いたランプ
WO2011027881A1 (ja) * 2009-09-07 2011-03-10 国立大学法人名古屋工業大学 真空紫外発光デバイス
JP2011055898A (ja) * 2009-09-07 2011-03-24 Nagoya Institute Of Technology 殺菌用光源
JPWO2011027881A1 (ja) * 2009-09-07 2013-02-04 国立大学法人 名古屋工業大学 真空紫外発光デバイス
JP5468079B2 (ja) * 2009-09-07 2014-04-09 国立大学法人 名古屋工業大学 真空紫外発光デバイス
WO2012147743A1 (ja) * 2011-04-25 2012-11-01 浜松ホトニクス株式会社 紫外光発生用ターゲット、電子線励起紫外光源、及び紫外光発生用ターゲットの製造方法
WO2012147744A1 (ja) * 2011-04-25 2012-11-01 浜松ホトニクス株式会社 紫外光発生用ターゲット、電子線励起紫外光源、及び紫外光発生用ターゲットの製造方法
JP2012229306A (ja) * 2011-04-25 2012-11-22 Hamamatsu Photonics Kk 紫外光発生用ターゲット、電子線励起紫外光源、及び紫外光発生用ターゲットの製造方法
JP5580932B2 (ja) * 2011-04-25 2014-08-27 浜松ホトニクス株式会社 紫外光発生用ターゲット、電子線励起紫外光源、及び紫外光発生用ターゲットの製造方法
US8895947B2 (en) 2011-04-25 2014-11-25 Hamamatsu Photonics K.K. Ultraviolet light generating target, electron-beam-excited ultraviolet light source, and method for producing ultraviolet light generating target
US9318312B2 (en) 2011-04-25 2016-04-19 Hamamatsu Photonics K.K. Ultraviolet light generating target, electron-beam-excited ultraviolet light source, and method for producing ultraviolet light generating target
US9278870B2 (en) 2014-01-21 2016-03-08 Panasonic Corporation Ultraviolet irradiation apparatus and ultraviolet irradiation method

Also Published As

Publication number Publication date
EP2259286A4 (en) 2011-05-11
US8120238B2 (en) 2012-02-21
KR20100070343A (ko) 2010-06-25
EP2259286A1 (en) 2010-12-08
JP4555899B2 (ja) 2010-10-06
KR101478391B1 (ko) 2014-12-31
US20100289435A1 (en) 2010-11-18
JPWO2009031584A1 (ja) 2010-12-16
CN101842869A (zh) 2010-09-22

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