WO2009031268A1 - 回折格子型発光ダイオード - Google Patents

回折格子型発光ダイオード Download PDF

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Publication number
WO2009031268A1
WO2009031268A1 PCT/JP2008/002262 JP2008002262W WO2009031268A1 WO 2009031268 A1 WO2009031268 A1 WO 2009031268A1 JP 2008002262 W JP2008002262 W JP 2008002262W WO 2009031268 A1 WO2009031268 A1 WO 2009031268A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
emitting diode
layer
holes
type gan
Prior art date
Application number
PCT/JP2008/002262
Other languages
English (en)
French (fr)
Inventor
Susumu Noda
Takashi Asano
Masayuki Fujita
Hitoshi Kitagawa
Toshihide Suto
Original Assignee
Alps Electric Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alps Electric Co., Ltd. filed Critical Alps Electric Co., Ltd.
Publication of WO2009031268A1 publication Critical patent/WO2009031268A1/ja
Priority to US12/704,325 priority Critical patent/US20100140651A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0083—Periodic patterns for optical field-shaping in or on the semiconductor body or semiconductor body package, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

　本発明の課題は、空孔を２次元周期的に形成する場合にその周期を適切に設定することにより外部量子効率の向上を図った回折格子型発光ダイオードを提供することである。sapphire基板１０の上にｎ型GaN層１２、InGaN/GaN活性層１４、ｐ型GaN層１６、透明電極層１８を積層して発光ダイオードを構成する。透明電極層１８、ｐ型GaN層１６、InGaN/GaN活性層１４、ｎ型GaN層１２に、これらの層にほぼ垂直な方向に延びる多数の空孔２４を２次元周期的に形成する。非発光再結合速度をvsとすると、空孔２４の配置周期ａは次の式（Ⅰ）を満たす。
PCT/JP2008/002262 2007-09-03 2008-08-21 回折格子型発光ダイオード WO2009031268A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/704,325 US20100140651A1 (en) 2007-09-03 2010-02-11 Diffraction grating light-emitting diode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-228178 2007-09-03
JP2007228178A JP5242975B2 (ja) 2007-09-03 2007-09-03 回折格子型発光ダイオード

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/704,325 Continuation US20100140651A1 (en) 2007-09-03 2010-02-11 Diffraction grating light-emitting diode

Publications (1)

Publication Number Publication Date
WO2009031268A1 true WO2009031268A1 (ja) 2009-03-12

Family

ID=40428592

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002262 WO2009031268A1 (ja) 2007-09-03 2008-08-21 回折格子型発光ダイオード

Country Status (4)

Country Link
US (1) US20100140651A1 (ja)
JP (1) JP5242975B2 (ja)
TW (1) TWI390770B (ja)
WO (1) WO2009031268A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103069584A (zh) * 2010-08-11 2013-04-24 首尔Opto仪器股份有限公司 Uv发光二极管及其制造方法

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011023639A (ja) * 2009-07-17 2011-02-03 Alps Electric Co Ltd 半導体発光素子
JP5300078B2 (ja) * 2009-10-19 2013-09-25 国立大学法人京都大学 フォトニック結晶発光ダイオード
CN102760810B (zh) * 2011-04-28 2015-01-07 展晶科技(深圳)有限公司 发光二极管晶粒及其制造方法
CN103367570B (zh) * 2012-03-30 2016-01-20 清华大学 白光led
CN109980058A (zh) * 2019-02-28 2019-07-05 江苏大学 一种具有空气孔光子晶体结构的高出光效率二极管
CN116387975B (zh) * 2023-06-05 2023-12-29 福建慧芯激光科技有限公司 一种激射方向可调型稳波长边发射激光器

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004521509A (ja) * 2001-04-26 2004-07-15 サントル・ナショナル・ドゥ・ラ・レシェルシュ・サイエンティフィーク 光取り出し手段を持つ電界発光素子
JP2004289096A (ja) * 2003-03-19 2004-10-14 Lumileds Lighting Us Llc フォトニック結晶構造を使用するｌｅｄ効率の改良
JP2006196658A (ja) * 2005-01-13 2006-07-27 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法
JP2006310721A (ja) * 2005-03-28 2006-11-09 Yokohama National Univ 自発光デバイス

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US173887A (en) * 1876-02-22 Improvement in horse-collar guards
US141333A (en) * 1873-07-29 Improvement in the manufacture of chlorine
US7279718B2 (en) * 2002-01-28 2007-10-09 Philips Lumileds Lighting Company, Llc LED including photonic crystal structure

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004521509A (ja) * 2001-04-26 2004-07-15 サントル・ナショナル・ドゥ・ラ・レシェルシュ・サイエンティフィーク 光取り出し手段を持つ電界発光素子
JP2004289096A (ja) * 2003-03-19 2004-10-14 Lumileds Lighting Us Llc フォトニック結晶構造を使用するｌｅｄ効率の改良
JP2006196658A (ja) * 2005-01-13 2006-07-27 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法
JP2006310721A (ja) * 2005-03-28 2006-11-09 Yokohama National Univ 自発光デバイス

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103069584A (zh) * 2010-08-11 2013-04-24 首尔Opto仪器股份有限公司 Uv发光二极管及其制造方法

Also Published As

Publication number Publication date
JP2009060046A (ja) 2009-03-19
TW200919788A (en) 2009-05-01
JP5242975B2 (ja) 2013-07-24
US20100140651A1 (en) 2010-06-10
TWI390770B (zh) 2013-03-21

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