WO2009028343A1 - 光電変換回路およびそれを備えた固体撮像装置 - Google Patents

光電変換回路およびそれを備えた固体撮像装置 Download PDF

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Publication number
WO2009028343A1
WO2009028343A1 PCT/JP2008/064682 JP2008064682W WO2009028343A1 WO 2009028343 A1 WO2009028343 A1 WO 2009028343A1 JP 2008064682 W JP2008064682 W JP 2008064682W WO 2009028343 A1 WO2009028343 A1 WO 2009028343A1
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WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
solid
imaging device
same
conversion circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/064682
Other languages
English (en)
French (fr)
Inventor
Hiroshi Sekiguchi
Takaaki Fuchikami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to US12/597,204 priority Critical patent/US8537259B2/en
Priority to CN200880021649A priority patent/CN101690176A/zh
Publication of WO2009028343A1 publication Critical patent/WO2009028343A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/772—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters
    • H04N25/773—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising A/D, V/T, V/F, I/T or I/F converters comprising photon counting circuits, e.g. single photon detection [SPD] or single photon avalanche diodes [SPAD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

　光電変換回路（Ｐ１１～Ｐｍｎ）は、一端にバイアス電圧が印加され、他端から受光量に応じた光電流を出力する光電変換素子（ＰＤ）と、光電変換素子（ＰＤ）の他端電圧を所定の電位にクランプし、かつ光電流を検出する光電流検出部（１１～１３）とを備える。
PCT/JP2008/064682 2007-08-31 2008-08-18 光電変換回路およびそれを備えた固体撮像装置 Ceased WO2009028343A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/597,204 US8537259B2 (en) 2007-08-31 2008-08-18 Photoelectric conversion circuit and solid state imaging device including same
CN200880021649A CN101690176A (zh) 2007-08-31 2008-08-18 光电变换电路及其具备该电路的固体摄像装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-226559 2007-08-31
JP2007226559A JP2009060424A (ja) 2007-08-31 2007-08-31 光電変換回路及びこれを用いた固体撮像装置

Publications (1)

Publication Number Publication Date
WO2009028343A1 true WO2009028343A1 (ja) 2009-03-05

Family

ID=40387068

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064682 Ceased WO2009028343A1 (ja) 2007-08-31 2008-08-18 光電変換回路およびそれを備えた固体撮像装置

Country Status (4)

Country Link
US (1) US8537259B2 (ja)
JP (1) JP2009060424A (ja)
CN (1) CN101690176A (ja)
WO (1) WO2009028343A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012129984A (ja) * 2010-11-26 2012-07-05 Fujifilm Corp 放射線画像検出装置、及び放射線画像撮影システム

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5520597B2 (ja) * 2009-05-19 2014-06-11 ローム株式会社 フォトダイオードの製造方法
JP5702570B2 (ja) * 2009-11-27 2015-04-15 ローム株式会社 オペアンプ及びこれを用いた液晶駆動装置、並びに、パラメータ設定回路、半導体装置、電源装置
CN104685786A (zh) * 2012-09-27 2015-06-03 三菱电机株式会社 接收器以及接收方法
EP2778715A1 (en) * 2013-03-14 2014-09-17 Agfa Healthcare A pixel unit for a radiographic image detecting apparatus
US11064142B1 (en) * 2013-09-11 2021-07-13 Varex Imaging Corporation Imaging system with a digital conversion circuit for generating a digital correlated signal sample and related imaging method
EP3044951A4 (en) * 2013-09-11 2017-09-06 Varex Imaging Corporation Pixel circuit with constant voltage biased photodiode and related imaging method
CN104113714B (zh) * 2014-07-31 2017-12-29 深圳大学 Cmos有源像素结构及图像传感器
US9912302B2 (en) * 2015-01-20 2018-03-06 Sensors Unlimited, Inc. Pulse detection amplifier
GB2542426A (en) * 2015-09-21 2017-03-22 Univ Oxford Innovation Ltd Pixel circuit
JP6324638B2 (ja) * 2015-12-21 2018-05-16 三菱電機株式会社 光受信器、光終端装置および光通信システム
CN107330409B (zh) * 2017-07-03 2019-12-31 京东方科技集团股份有限公司 一种电流放大电路、指纹检测装置及其控制方法
CN111095560A (zh) * 2017-11-30 2020-05-01 松下知识产权经营株式会社 摄像装置
CN108647541B (zh) * 2018-04-24 2021-05-04 深圳大学 一种条码扫描芯片以及扫描方法
US11476340B2 (en) * 2019-10-25 2022-10-18 Ohio State Innovation Foundation Dielectric heterojunction device
US11349042B2 (en) 2019-12-18 2022-05-31 Stmicroelectronics (Research & Development) Limited Anode sensing circuit for single photon avalanche diodes
US11848389B2 (en) 2020-03-19 2023-12-19 Ohio State Innovation Foundation Low turn on and high breakdown voltage lateral diode
CN114739433B (zh) * 2022-04-15 2023-12-26 北京京东方光电科技有限公司 一种光电传感器信号读取电路及光电传感器装置
FR3143931B1 (fr) * 2022-12-20 2026-04-24 Commissariat Energie Atomique Détection de pulse laser asynchrone et imagerie passive

Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH11298798A (ja) * 1998-04-15 1999-10-29 Minolta Co Ltd 固体撮像装置
JP2005160031A (ja) * 2003-10-30 2005-06-16 Sokichi Hirotsu 半導体撮像素子
JP2008141737A (ja) * 2006-11-07 2008-06-19 Nippon Signal Co Ltd:The 電荷検出装置

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JPH08149376A (ja) * 1994-11-18 1996-06-07 Olympus Optical Co Ltd 固体撮像装置
US6831691B1 (en) * 1998-04-15 2004-12-14 Minolta Co., Ltd. Solid-state image pickup device
JP4610075B2 (ja) 2000-12-05 2011-01-12 ローム株式会社 受光装置
US6798250B1 (en) * 2002-09-04 2004-09-28 Pixim, Inc. Current sense amplifier circuit
JP2004159155A (ja) 2002-11-07 2004-06-03 Rohm Co Ltd エリアイメージセンサ

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JPH11298798A (ja) * 1998-04-15 1999-10-29 Minolta Co Ltd 固体撮像装置
JP2005160031A (ja) * 2003-10-30 2005-06-16 Sokichi Hirotsu 半導体撮像素子
JP2008141737A (ja) * 2006-11-07 2008-06-19 Nippon Signal Co Ltd:The 電荷検出装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012129984A (ja) * 2010-11-26 2012-07-05 Fujifilm Corp 放射線画像検出装置、及び放射線画像撮影システム

Also Published As

Publication number Publication date
US8537259B2 (en) 2013-09-17
US20100123812A1 (en) 2010-05-20
CN101690176A (zh) 2010-03-31
JP2009060424A (ja) 2009-03-19

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