WO2009022552A1 - 金属ドープモリブデン酸化物層を含む有機エレクトロルミネッセンス素子及び製造方法 - Google Patents

金属ドープモリブデン酸化物層を含む有機エレクトロルミネッセンス素子及び製造方法 Download PDF

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Publication number
WO2009022552A1
WO2009022552A1 PCT/JP2008/063841 JP2008063841W WO2009022552A1 WO 2009022552 A1 WO2009022552 A1 WO 2009022552A1 JP 2008063841 W JP2008063841 W JP 2008063841W WO 2009022552 A1 WO2009022552 A1 WO 2009022552A1
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WO
WIPO (PCT)
Prior art keywords
organic electroluminescent
electroluminescent device
molybdenum oxide
manufacturing
oxide layer
Prior art date
Application number
PCT/JP2008/063841
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English (en)
French (fr)
Inventor
Shinichi Morishima
Original Assignee
Sumitomo Chemical Company, Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Company, Limited filed Critical Sumitomo Chemical Company, Limited
Priority to EP08792054.2A priority Critical patent/EP2184794B1/en
Priority to US12/672,146 priority patent/US8928028B2/en
Priority to CN2008801022176A priority patent/CN101785129B/zh
Publication of WO2009022552A1 publication Critical patent/WO2009022552A1/ja

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/155—Hole transporting layers comprising dopants
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G39/00—Compounds of molybdenum
    • C01G39/02—Oxides; Hydroxides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers

Abstract

　本発明の目的は容易に製造することができ、且つ発光特性及び寿命特性が良好な有機エレクトロルミネッセンス素子及びその製造方法を提供することにある。 　すなわち本発明は、陽極、発光層及び陰極を有する有機エレクトロルミネッセンス素子であって、前記陽極と前記発光層との間に設けられた、金属ドープモリブデン酸化物層をさらに有する有機エレクトロルミネッセンス素子；並びに素子を構成する他の層上に、酸化モリブデン及びドーパント金属を同時に積層し、金属ドープモリブデン酸化物層を得る積層工程を含む前記有機エレクトロルミネッセンス素子の製造方法を提供する。
PCT/JP2008/063841 2007-08-10 2008-08-01 金属ドープモリブデン酸化物層を含む有機エレクトロルミネッセンス素子及び製造方法 WO2009022552A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08792054.2A EP2184794B1 (en) 2007-08-10 2008-08-01 Organic electroluminescent device containing metal-doped molybdenum oxide layer and method for manufacturing the same
US12/672,146 US8928028B2 (en) 2007-08-10 2008-08-01 Organic electroluminescence element including metal doped molybdenum oxide layer and method for producing the same
CN2008801022176A CN101785129B (zh) 2007-08-10 2008-08-01 包含掺杂有金属的钼氧化物层的有机电子发光元件及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-210447 2007-08-10
JP2007210447A JP5214194B2 (ja) 2007-08-10 2007-08-10 金属ドープモリブデン酸化物層を含む有機エレクトロルミネッセンス素子及び製造方法

Publications (1)

Publication Number Publication Date
WO2009022552A1 true WO2009022552A1 (ja) 2009-02-19

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PCT/JP2008/063841 WO2009022552A1 (ja) 2007-08-10 2008-08-01 金属ドープモリブデン酸化物層を含む有機エレクトロルミネッセンス素子及び製造方法

Country Status (7)

Country Link
US (1) US8928028B2 (ja)
EP (1) EP2184794B1 (ja)
JP (1) JP5214194B2 (ja)
KR (1) KR20100054798A (ja)
CN (1) CN101785129B (ja)
TW (1) TWI452929B (ja)
WO (1) WO2009022552A1 (ja)

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WO2012129791A1 (zh) * 2011-03-30 2012-10-04 海洋王照明科技股份有限公司 一种柔性有机电致发光器件及其制备方法

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JP5326665B2 (ja) * 2008-03-26 2013-10-30 凸版印刷株式会社 有機エレクトロルミネッセンス素子の製造方法
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KR100994118B1 (ko) * 2009-01-13 2010-11-15 삼성모바일디스플레이주식회사 유기 발광 소자 및 그 제조 방법
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JP2011009639A (ja) 2009-06-29 2011-01-13 Toshiba Mobile Display Co Ltd 有機ｅｌ装置及びその製造方法
CN102110783A (zh) * 2010-12-22 2011-06-29 西安文景光电科技有限公司 低电压驱动的空穴注入层作为发光调节层的oled器件
CN102683609A (zh) * 2011-03-14 2012-09-19 海洋王照明科技股份有限公司 一种反置透明有机电致发光器件及其制备方法
JP2011181529A (ja) * 2011-06-20 2011-09-15 Toshiba Mobile Display Co Ltd 有機ｅｌ装置の製造方法
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JP5377705B2 (ja) * 2012-04-24 2013-12-25 株式会社ジャパンディスプレイ 有機ｅｌ装置の製造方法
CN103378297B (zh) * 2012-04-25 2017-01-25 群康科技(深圳)有限公司 有机发光二极管及包括其的显示装置
US9379343B2 (en) * 2012-09-10 2016-06-28 Samsung Electronics Co., Ltd. Light transmissive electrode, organic photoelectric device, and image sensor
CN109449316B (zh) * 2016-04-19 2020-04-17 Tcl集团股份有限公司 一种In掺杂MoO3薄膜的制备方法
JP6664514B2 (ja) 2016-05-10 2020-03-13 エルジー・ケム・リミテッド 有機電界発光素子およびその製造方法
CN106784397B (zh) * 2016-12-15 2019-06-04 Tcl集团股份有限公司 一种Al掺杂氧化物、制备方法及QLED
CN106784350A (zh) * 2016-12-23 2017-05-31 京东方科技集团股份有限公司 一种有机电致发光显示面板及其制作方法、显示装置
CN106601915B (zh) * 2016-12-30 2018-09-25 天津市职业大学 一种以聚苯胺为空穴传输层的钙钛矿太阳电池及制备方法
US11462711B2 (en) 2017-06-26 2022-10-04 Samsung Display Co., Ltd. Light-emitting device and method of fabricating display panel therewith
KR20190001629A (ko) * 2017-06-26 2019-01-07 삼성디스플레이 주식회사 발광소자 및 표시패널의 제조방법
KR101952716B1 (ko) * 2017-09-04 2019-02-27 경희대학교 산학협력단 금속/몰리브덴 산화물 나노입자의 제조방법
TWI718353B (zh) * 2017-12-13 2021-02-11 財團法人工業技術研究院 鈣鈦礦太陽能電池與堆疊型太陽能電池
KR102576996B1 (ko) * 2018-04-26 2023-09-12 삼성디스플레이 주식회사 유기발광소자 및 이를 포함하는 유기발광표시장치
KR102646917B1 (ko) * 2021-09-16 2024-03-13 엘티메탈 주식회사 몰리브덴 산화물계 소결체, 상기 소결체를 이용한 박막, 상기 박막을 포함하는 박막트랜지스터 및 디스플레이 장치

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2256839A3 (en) * 2009-05-28 2012-04-18 Imec Method for fabricating organic optoelectronic devices and organic devices thereby obtained
US8592804B2 (en) 2009-05-28 2013-11-26 Imec Method for fabricating organic optoelectronic devices
WO2012129791A1 (zh) * 2011-03-30 2012-10-04 海洋王照明科技股份有限公司 一种柔性有机电致发光器件及其制备方法

Also Published As

Publication number Publication date
CN101785129A (zh) 2010-07-21
TW200917890A (en) 2009-04-16
EP2184794B1 (en) 2013-07-17
JP2009044101A (ja) 2009-02-26
US20110068327A1 (en) 2011-03-24
KR20100054798A (ko) 2010-05-25
CN101785129B (zh) 2012-02-15
US8928028B2 (en) 2015-01-06
JP5214194B2 (ja) 2013-06-19
EP2184794A1 (en) 2010-05-12
EP2184794A4 (en) 2011-07-06
TWI452929B (zh) 2014-09-11

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