WO2009012726A1 - Del non isolante - Google Patents

Del non isolante Download PDF

Info

Publication number
WO2009012726A1
WO2009012726A1 PCT/CN2008/071765 CN2008071765W WO2009012726A1 WO 2009012726 A1 WO2009012726 A1 WO 2009012726A1 CN 2008071765 W CN2008071765 W CN 2008071765W WO 2009012726 A1 WO2009012726 A1 WO 2009012726A1
Authority
WO
WIPO (PCT)
Prior art keywords
main electrode
diode
connecting bridge
tower
diode chip
Prior art date
Application number
PCT/CN2008/071765
Other languages
English (en)
Chinese (zh)
Inventor
Xiaobao Wang
Lifeng Liu
Shanqi Zhao
Original Assignee
Macmic Science & Technology Co., Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macmic Science & Technology Co., Ltd filed Critical Macmic Science & Technology Co., Ltd
Publication of WO2009012726A1 publication Critical patent/WO2009012726A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

L'invention concerne une diode électroluminescente (DEL) non isolante qui comprend une plaque de base (1), une puce DEL (3), une électrode principale (6) et une enveloppe (9). La surface inférieure de la puce DEL (3) est fixée et connectée à la plaque de base (1) par la couche de transition inférieure (4). La surface supérieure de la puce DEL (3) est fixée et connectée à un côté d'une plaque de connecteur (5) par la couche de transition supérieure (2). La plaque de connecteur (5) comprend plus de deux lamelles courbées. L'autre côté de la plaque de connecteur (5) est fixé sur la plaque de base (1) par un isolateur (7). Une enveloppe (9) est fixée sur la plaque de base (1). Le dessus de l'enveloppe a un renfoncement orienté (91). L'électrode principale (6) est du type lamelle qui comprend plus de courbures. L'intérieur de l'électrode principale (6) est fixé et connecté à la plaque de connecteur (5). L'autre côté de l'électrode principale (6) dépasse de l'enveloppe (9) et couvre le dessus de l'enveloppe (9). L'électrode principale (6) qui couvre le dessus de l'enveloppe (9) comporte un trou traversant (61) qui correspond au renfoncement orienté (91) de l'enveloppe (9). Autour de la couche de transition inférieure (4), la puce DEL (3), la couche de transition supérieure (2), la plaque de connecteur (5) et l'isolateur (7) et un côté de l'électrode principale (6) sont fermés hermétiquement par injection de colle (8).
PCT/CN2008/071765 2007-07-26 2008-07-25 Del non isolante WO2009012726A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN200710025365.X 2007-07-26
CN 200710025365 CN100583433C (zh) 2007-07-26 2007-07-26 非绝缘双塔型二极管模块

Publications (1)

Publication Number Publication Date
WO2009012726A1 true WO2009012726A1 (fr) 2009-01-29

Family

ID=39042391

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2008/071765 WO2009012726A1 (fr) 2007-07-26 2008-07-25 Del non isolante

Country Status (2)

Country Link
CN (1) CN100583433C (fr)
WO (1) WO2009012726A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100583433C (zh) * 2007-07-26 2010-01-20 江苏宏微科技有限公司 非绝缘双塔型二极管模块
CN106783773A (zh) * 2016-12-13 2017-05-31 中航（重庆）微电子有限公司 一种非绝缘双塔型二极管模块

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06169030A (ja) * 1992-11-30 1994-06-14 Kyocera Corp 電子部品用パッケージ、電子部品用パッケージ基板及び電子部品用パッケージ基板の製造方法
JPH08153826A (ja) * 1994-11-30 1996-06-11 Hitachi Ltd 半導体集積回路装置
US6670751B2 (en) * 2001-05-24 2003-12-30 Samsung Electro-Mechanics Co., Ltd. Light emitting diode, light emitting device using the same, and fabrication processes therefor
JP2006303396A (ja) * 2005-04-25 2006-11-02 Matsushita Electric Works Ltd 表面実装型発光装置
CN101110415A (zh) * 2007-07-26 2008-01-23 江苏宏微科技有限公司 非绝缘双塔型二极管
CN201063345Y (zh) * 2007-07-26 2008-05-21 江苏宏微科技有限公司 非绝缘双塔型二极管模块

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06169030A (ja) * 1992-11-30 1994-06-14 Kyocera Corp 電子部品用パッケージ、電子部品用パッケージ基板及び電子部品用パッケージ基板の製造方法
JPH08153826A (ja) * 1994-11-30 1996-06-11 Hitachi Ltd 半導体集積回路装置
US6670751B2 (en) * 2001-05-24 2003-12-30 Samsung Electro-Mechanics Co., Ltd. Light emitting diode, light emitting device using the same, and fabrication processes therefor
JP2006303396A (ja) * 2005-04-25 2006-11-02 Matsushita Electric Works Ltd 表面実装型発光装置
CN101110415A (zh) * 2007-07-26 2008-01-23 江苏宏微科技有限公司 非绝缘双塔型二极管
CN201063345Y (zh) * 2007-07-26 2008-05-21 江苏宏微科技有限公司 非绝缘双塔型二极管模块

Also Published As

Publication number Publication date
CN100583433C (zh) 2010-01-20
CN101110415A (zh) 2008-01-23

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