WO2009005068A1 - 円筒形スパッタリングターゲット - Google Patents

円筒形スパッタリングターゲット Download PDF

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Publication number
WO2009005068A1
WO2009005068A1 PCT/JP2008/061923 JP2008061923W WO2009005068A1 WO 2009005068 A1 WO2009005068 A1 WO 2009005068A1 JP 2008061923 W JP2008061923 W JP 2008061923W WO 2009005068 A1 WO2009005068 A1 WO 2009005068A1
Authority
WO
WIPO (PCT)
Prior art keywords
tubular
target material
sputtering target
thetav
tubular sputtering
Prior art date
Application number
PCT/JP2008/061923
Other languages
English (en)
French (fr)
Inventor
Shigehisa Todoko
Kenichi Itoh
Tetsuo Shibutami
Original Assignee
Tosoh Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tosoh Corporation filed Critical Tosoh Corporation
Priority to EP08790786.1A priority Critical patent/EP2163662B1/en
Priority to US12/667,151 priority patent/US8828198B2/en
Priority to CN200880022992.0A priority patent/CN101688293B/zh
Publication of WO2009005068A1 publication Critical patent/WO2009005068A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

　スパッタ中の割れを著しく低減できる円筒形スパッタリングターゲットを提供する。 　ＩＴＯまたはＡＺＯからなる円筒形ターゲット材の相対密度が９０％以上であり、外周面の研削方向と円筒軸に平行な直線とのなす角度（前記角度のうち、０°以上９０°以下のものを示すθとする）が、４５°＜θ≦９０°またはｔａｎθ＞πＲ／Ｌ（Ｒは円筒形ターゲット材の外径、Ｌは円筒形ターゲット材の長さ）であり、かつ、前記円筒形ターゲット材の外周面の表面粗さＲａが３μｍ以下である円筒形スパッタリングターゲット。
PCT/JP2008/061923 2007-07-02 2008-07-01 円筒形スパッタリングターゲット WO2009005068A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08790786.1A EP2163662B1 (en) 2007-07-02 2008-07-01 Tubular sputtering target
US12/667,151 US8828198B2 (en) 2007-07-02 2008-07-01 Cylindrical sputtering target
CN200880022992.0A CN101688293B (zh) 2007-07-02 2008-07-01 圆筒形溅射靶

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007173841 2007-07-02
JP2007-173841 2007-07-02

Publications (1)

Publication Number Publication Date
WO2009005068A1 true WO2009005068A1 (ja) 2009-01-08

Family

ID=40226113

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/061923 WO2009005068A1 (ja) 2007-07-02 2008-07-01 円筒形スパッタリングターゲット

Country Status (7)

Country Link
US (1) US8828198B2 (ja)
EP (1) EP2163662B1 (ja)
JP (1) JP5467735B2 (ja)
KR (1) KR20100027145A (ja)
CN (1) CN101688293B (ja)
TW (1) TWI431139B (ja)
WO (1) WO2009005068A1 (ja)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110203921A1 (en) * 2010-02-19 2011-08-25 Tosoh Smd, Inc. Method of bonding rotatable ceramic targets to a backing structure
US9011652B2 (en) 2010-07-12 2015-04-21 Materion Advanced Material Technologies And Services Inc. Rotary target backing tube bonding assembly
US9334563B2 (en) 2010-07-12 2016-05-10 Materion Corporation Direct cooled rotary sputtering target
KR101341705B1 (ko) * 2010-11-24 2013-12-16 플란제 에스이 스퍼터링용 로터리 타겟의 접합방법
CN102242333A (zh) * 2011-06-23 2011-11-16 江苏宇天港玻新材料有限公司 使用旋转陶瓷靶制造镀膜玻璃的工艺
CN103814151B (zh) 2011-06-27 2016-01-20 梭莱有限公司 Pvd靶材及其铸造方法
JP5750060B2 (ja) * 2012-01-18 2015-07-15 三井金属鉱業株式会社 セラミックス円筒形スパッタリングターゲット材およびその製造方法
JP5954196B2 (ja) * 2013-01-25 2016-07-20 住友金属鉱山株式会社 円筒形Ｃｕ−Ｇａ合金スパッタリングターゲット及びその製造方法
WO2016027599A1 (ja) * 2014-08-22 2016-02-25 三井金属鉱業株式会社 円筒形スパッタリングターゲット用ターゲット材の製造方法および円筒形スパッタリングターゲット
JP6464666B2 (ja) * 2014-10-29 2019-02-06 住友金属鉱山株式会社 円筒形ターゲット材とその製造方法、および、円筒形スパッタリングターゲットとその製造方法
TWI704245B (zh) * 2015-02-13 2020-09-11 日商Ｊｘ金屬股份有限公司 濺射靶件及其製造方法
WO2016140021A1 (ja) * 2015-03-05 2016-09-09 三井金属鉱業株式会社 セラミックス円筒形ターゲット材および円筒形スパッタリングターゲット
JP5909006B1 (ja) * 2015-03-23 2016-04-26 Ｊｘ金属株式会社 円筒型スパッタリングターゲット及びその製造方法
JP5887625B1 (ja) * 2015-03-27 2016-03-16 Ｊｘ金属株式会社 円筒型スパッタリングターゲット、円筒型焼結体、円筒型成形体及びそれらの製造方法
JP6585913B2 (ja) * 2015-03-31 2019-10-02 三井金属鉱業株式会社 加工治具およびスパッタリングターゲット材の製造方法
JP6376101B2 (ja) * 2015-10-27 2018-08-22 住友金属鉱山株式会社 円筒形スパッタリングターゲットおよびその製造方法
JP6410960B2 (ja) * 2016-01-28 2018-10-24 Ｊｘ金属株式会社 円筒形セラミックス系スパッタリングターゲット材及び円筒形セラミックス系スパッタリングターゲット材をバッキングチューブに１つ以上接合させることで構成される円筒形セラミックス系スパッタリングターゲット
CN108151531B (zh) * 2017-09-11 2019-05-17 福建阿石创新材料股份有限公司 一种管状ito靶材的高温离心烧结装置及其烧结方法
JP6518809B1 (ja) * 2018-03-19 2019-05-22 Ｊｘ金属株式会社 スパッタリングターゲット及びその梱包方法
CN110747438B (zh) * 2019-12-02 2021-11-23 广西晶联光电材料有限责任公司 一种高贴合强度旋转靶材的绑定方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58500174A (ja) 1981-02-12 1983-02-03 ザ・ビーオーシー・グループ・パブリック・リミテッド・カンパニー マグネトロン型陰極スパツタリング装置
JP2001026863A (ja) * 1999-07-15 2001-01-30 Nikko Materials Co Ltd スパッタリングターゲット
JP2003055763A (ja) * 2001-08-17 2003-02-26 Tosoh Corp スパッタリングターゲット
JP2005281862A (ja) * 2004-03-05 2005-10-13 Tosoh Corp 円筒形スパッタリングターゲット並びにセラミックス焼結体及びその製造方法

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JPS63216661A (ja) * 1987-03-03 1988-09-08 Toyoda Mach Works Ltd 円筒研削方法
FR2692893B1 (fr) * 1992-06-24 1994-09-02 Sanofi Elf Dérivés alkylamino ramifiés du thiazole, leurs procédés de préparation et les compositions pharmaceutiques qui les contiennent.
JP3152108B2 (ja) 1994-06-13 2001-04-03 東ソー株式会社 Ｉｔｏスパッタリングターゲット
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TW555874B (en) * 2000-09-08 2003-10-01 Asahi Glass Co Ltd Cylindrical target and its production method
US20030207093A1 (en) * 2001-12-03 2003-11-06 Toshio Tsuji Transparent conductive layer forming method, transparent conductive layer formed by the method, and material comprising the layer
KR20060043427A (ko) * 2004-03-05 2006-05-15 토소가부시키가이샤 원통형 스퍼터링 타겟, 세라믹 소결체와 그 제조방법

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58500174A (ja) 1981-02-12 1983-02-03 ザ・ビーオーシー・グループ・パブリック・リミテッド・カンパニー マグネトロン型陰極スパツタリング装置
JP2001026863A (ja) * 1999-07-15 2001-01-30 Nikko Materials Co Ltd スパッタリングターゲット
JP3628554B2 (ja) 1999-07-15 2005-03-16 株式会社日鉱マテリアルズ スパッタリングターゲット
JP2003055763A (ja) * 2001-08-17 2003-02-26 Tosoh Corp スパッタリングターゲット
JP2005281862A (ja) * 2004-03-05 2005-10-13 Tosoh Corp 円筒形スパッタリングターゲット並びにセラミックス焼結体及びその製造方法

Non-Patent Citations (1)

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Title
See also references of EP2163662A4 *

Also Published As

Publication number Publication date
EP2163662A1 (en) 2010-03-17
CN101688293B (zh) 2014-07-23
JP5467735B2 (ja) 2014-04-09
CN101688293A (zh) 2010-03-31
TWI431139B (zh) 2014-03-21
US8828198B2 (en) 2014-09-09
US20100326823A1 (en) 2010-12-30
JP2009030165A (ja) 2009-02-12
KR20100027145A (ko) 2010-03-10
EP2163662A4 (en) 2014-09-17
EP2163662B1 (en) 2017-02-08
TW200927968A (en) 2009-07-01

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