WO2008152976A1 - 半導体セラミック材料 - Google Patents

半導体セラミック材料 Download PDF

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Publication number
WO2008152976A1
WO2008152976A1 PCT/JP2008/060424 JP2008060424W WO2008152976A1 WO 2008152976 A1 WO2008152976 A1 WO 2008152976A1 JP 2008060424 W JP2008060424 W JP 2008060424W WO 2008152976 A1 WO2008152976 A1 WO 2008152976A1
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WIPO (PCT)
Prior art keywords
ceramic material
semiconductor ceramic
mole
parts
content
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PCT/JP2008/060424
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English (en)
French (fr)
Inventor
Hayato Katsu
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Murata Manufacturing Co., Ltd.
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Publication date
Application filed by Murata Manufacturing Co., Ltd. filed Critical Murata Manufacturing Co., Ltd.
Priority to JP2009519237A priority Critical patent/JP5152182B2/ja
Priority to KR1020097026005A priority patent/KR101149634B1/ko
Priority to CN2008800202491A priority patent/CN101687714B/zh
Priority to EP08765237.6A priority patent/EP2159207B1/en
Publication of WO2008152976A1 publication Critical patent/WO2008152976A1/ja
Priority to US12/636,372 priority patent/US8093170B2/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H01C7/023Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
    • H01C7/025Perovskites, e.g. titanates
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    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
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    • C04B35/465Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
    • C04B35/468Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
    • C04B35/4682Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
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  • Physics & Mathematics (AREA)
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Abstract

 Pbを含有せず、キュリー点が高く、さらに比抵抗の低い、PTC特性を有する半導体セラミック材料を提供する。  一般式:ABO3で表される、PTC特性を有する半導体セラミック材料であって、Aは、Ba、Ca、アルカリ金属元素、Biおよび希土類元素を含み、BはTiを含む。Caは、Ti100モル部に対して、5~20モル部、好ましくは12.5~17.5モル部含む。アルカリ金属元素の含有量/(Biの含有量+希土類元素の含有量)は、1.0~1.06の範囲に選ばれることが好ましい。また、さらに、Mnを、Ti100モル部に対して、0.01~0.2モル部含むことが好ましい。
PCT/JP2008/060424 2007-06-14 2008-06-06 半導体セラミック材料 WO2008152976A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2009519237A JP5152182B2 (ja) 2007-06-14 2008-06-06 半導体セラミック材料
KR1020097026005A KR101149634B1 (ko) 2007-06-14 2008-06-06 반도체 세라믹 재료
CN2008800202491A CN101687714B (zh) 2007-06-14 2008-06-06 半导体陶瓷材料
EP08765237.6A EP2159207B1 (en) 2007-06-14 2008-06-06 Semiconductor ceramic material
US12/636,372 US8093170B2 (en) 2007-06-14 2009-12-11 Semiconductor ceramic material

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-157420 2007-06-14
JP2007157420 2007-06-14

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/636,372 Continuation US8093170B2 (en) 2007-06-14 2009-12-11 Semiconductor ceramic material

Publications (1)

Publication Number Publication Date
WO2008152976A1 true WO2008152976A1 (ja) 2008-12-18

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ID=40129581

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060424 WO2008152976A1 (ja) 2007-06-14 2008-06-06 半導体セラミック材料

Country Status (6)

Country Link
US (1) US8093170B2 (ja)
EP (1) EP2159207B1 (ja)
JP (1) JP5152182B2 (ja)
KR (1) KR101149634B1 (ja)
CN (1) CN101687714B (ja)
WO (1) WO2008152976A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010083737A (ja) * 2008-10-02 2010-04-15 Hitachi Metals Ltd 半導体磁器組成物
JP2012169515A (ja) * 2011-02-16 2012-09-06 Hitachi Metals Ltd Ptc素子および発熱モジュール
WO2012132954A1 (ja) * 2011-03-30 2012-10-04 株式会社村田製作所 半導体セラミック及び正特性サーミスタ
US8289125B2 (en) 2008-12-12 2012-10-16 Murata Manufacturing Co., Ltd. Semiconductor ceramic and positive temperature coefficient thermistor
US8350662B2 (en) 2008-12-12 2013-01-08 Murata Manufacturing Co., Ltd. Semiconductor ceramic and positive temperature coefficient thermistor
WO2014141814A1 (ja) * 2013-03-11 2014-09-18 Tdk株式会社 Ptcサーミスタ磁器組成物およびptcサーミスタ素子
JP2016050134A (ja) * 2014-08-29 2016-04-11 Tdk株式会社 圧電組成物および圧電素子

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102164873B (zh) * 2008-09-30 2013-04-17 株式会社村田制作所 钛酸钡系半导体陶瓷组合物及ptc热敏电阻
EP2371788A4 (en) * 2008-12-12 2012-07-04 Murata Manufacturing Co SEMICONDUCTOR CERAMICS AND THERMISTOR WITH POSITIVE TEMPERATURE COEFFICIENT
WO2010067866A1 (ja) * 2008-12-12 2010-06-17 株式会社 村田製作所 半導体セラミック及び正特性サーミスタ
JP5500307B2 (ja) * 2011-02-24 2014-05-21 株式会社村田製作所 正特性サーミスタ素子
JP6337689B2 (ja) 2013-10-03 2018-06-06 Tdk株式会社 半導体磁器組成物およびptcサーミスタ
JP2017143090A (ja) * 2016-02-08 2017-08-17 Tdk株式会社 半導体磁器組成物およびptcサーミスタ
WO2019204430A1 (en) 2018-04-17 2019-10-24 Avx Corporation Varistor for high temperature applications
JP7021701B2 (ja) * 2018-07-05 2022-02-17 株式会社村田製作所 セラミック部材及び電子素子

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JPS5595673A (en) * 1978-12-27 1980-07-21 Matsushita Electric Ind Co Ltd Semiconductive ceramic material and production thereof
JPS56169301A (en) 1980-06-02 1981-12-26 Tohoku Metal Ind Ltd Method of producing barium titanate semiconductor porcelain
JPH1070007A (ja) * 1996-08-28 1998-03-10 Matsushita Electric Ind Co Ltd 正特性サーミスタの製造方法
JP2005255493A (ja) 2004-03-12 2005-09-22 Neomax Co Ltd 半導体磁器組成物

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5595673A (en) * 1978-12-27 1980-07-21 Matsushita Electric Ind Co Ltd Semiconductive ceramic material and production thereof
JPS56169301A (en) 1980-06-02 1981-12-26 Tohoku Metal Ind Ltd Method of producing barium titanate semiconductor porcelain
JPH1070007A (ja) * 1996-08-28 1998-03-10 Matsushita Electric Ind Co Ltd 正特性サーミスタの製造方法
JP2005255493A (ja) 2004-03-12 2005-09-22 Neomax Co Ltd 半導体磁器組成物

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Title
See also references of EP2159207A4

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010083737A (ja) * 2008-10-02 2010-04-15 Hitachi Metals Ltd 半導体磁器組成物
US8289125B2 (en) 2008-12-12 2012-10-16 Murata Manufacturing Co., Ltd. Semiconductor ceramic and positive temperature coefficient thermistor
US8350662B2 (en) 2008-12-12 2013-01-08 Murata Manufacturing Co., Ltd. Semiconductor ceramic and positive temperature coefficient thermistor
JP2012169515A (ja) * 2011-02-16 2012-09-06 Hitachi Metals Ltd Ptc素子および発熱モジュール
WO2012132954A1 (ja) * 2011-03-30 2012-10-04 株式会社村田製作所 半導体セラミック及び正特性サーミスタ
JP5812091B2 (ja) * 2011-03-30 2015-11-11 株式会社村田製作所 半導体セラミック及び正特性サーミスタ
WO2014141814A1 (ja) * 2013-03-11 2014-09-18 Tdk株式会社 Ptcサーミスタ磁器組成物およびptcサーミスタ素子
JP5930118B2 (ja) * 2013-03-11 2016-06-08 Tdk株式会社 Ptcサーミスタ磁器組成物およびptcサーミスタ素子
US9697935B2 (en) 2013-03-11 2017-07-04 Tdk Corporation PTC thermistor ceramic composition and PTC thermistor element
JP2016050134A (ja) * 2014-08-29 2016-04-11 Tdk株式会社 圧電組成物および圧電素子

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US8093170B2 (en) 2012-01-10
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CN101687714B (zh) 2013-04-17
JPWO2008152976A1 (ja) 2010-08-26
CN101687714A (zh) 2010-03-31
KR20100009584A (ko) 2010-01-27
US20100084619A1 (en) 2010-04-08
EP2159207B1 (en) 2016-11-16
EP2159207A4 (en) 2014-06-18
KR101149634B1 (ko) 2012-05-25

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