WO2008149751A1 - 半導体装置の製造方法、半導体製造装置及び記憶媒体 - Google Patents

半導体装置の製造方法、半導体製造装置及び記憶媒体 Download PDF

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Publication number
WO2008149751A1
WO2008149751A1 PCT/JP2008/059828 JP2008059828W WO2008149751A1 WO 2008149751 A1 WO2008149751 A1 WO 2008149751A1 JP 2008059828 W JP2008059828 W JP 2008059828W WO 2008149751 A1 WO2008149751 A1 WO 2008149751A1
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Prior art keywords
copper
seed layer
substrate
concave part
self
Prior art date
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Ceased
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PCT/JP2008/059828
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English (en)
French (fr)
Inventor
Yasuhiko Kojima
Kenji Matsumoto
Hidenori Miyoshi
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
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Publication of WO2008149751A1 publication Critical patent/WO2008149751A1/ja
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/047—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by introducing additional elements therein
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0523—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by irradiating with ultraviolet or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0526—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by thermal treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/055—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by formation methods other than physical vapour deposition [PVD], chemical vapour deposition [CVD] or liquid deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/055—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by formation methods other than physical vapour deposition [PVD], chemical vapour deposition [CVD] or liquid deposition
    • H10W20/0552—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by formation methods other than physical vapour deposition [PVD], chemical vapour deposition [CVD] or liquid deposition by diffusing metallic dopants to react with dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

　酸化物となり銅の拡散防止機能を発揮する自己形成バリア用の金属又はこの金属と銅との合金からなるシード層を、基板表面の層間絶縁膜上及びその凹部の内壁面に沿って形成する工程と、シード層を水素の活性種を用いて還元する工程と、シード層の還元後、凹部に銅を埋め込む工程と、銅の埋め込み後、シード層を構成する自己形成バリア用の金属を酸化してバリア層を形成すると共に余剰の自己形成バリア用の金属を銅の表面に析出させるために酸素雰囲気において基板を加熱処理する工程とを含み、シード層還元後、凹部に銅を埋め込むまでの間の基板が置かれる雰囲気を真空雰囲気又は不活性ガス雰囲気とする。
PCT/JP2008/059828 2007-05-30 2008-05-28 半導体装置の製造方法、半導体製造装置及び記憶媒体 Ceased WO2008149751A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-143991 2007-05-30
JP2007143991A JP2008300568A (ja) 2007-05-30 2007-05-30 半導体装置の製造方法、半導体製造装置及び記憶媒体

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WO2008149751A1 true WO2008149751A1 (ja) 2008-12-11

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WO (1) WO2008149751A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103730410A (zh) * 2012-10-10 2014-04-16 格罗方德半导体公司 于通孔底部具有自行成阻障层的半导体装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5522979B2 (ja) * 2009-06-16 2014-06-18 国立大学法人東北大学 成膜方法及び処理システム
JP5307072B2 (ja) 2009-06-17 2013-10-02 東京エレクトロン株式会社 金属酸化物膜の形成方法及び成膜装置
KR101659469B1 (ko) 2011-06-16 2016-09-23 도쿄엘렉트론가부시키가이샤 반도체 장치의 제조 방법, 반도체 장치, 반도체 장치의 제조 장치 및 기억 매체
WO2014013941A1 (ja) 2012-07-18 2014-01-23 東京エレクトロン株式会社 半導体装置の製造方法
JP6268008B2 (ja) 2014-03-17 2018-01-24 東京エレクトロン株式会社 Ｃｕ配線の製造方法
JP6584326B2 (ja) 2015-03-16 2019-10-02 東京エレクトロン株式会社 Ｃｕ配線の製造方法
US10096548B2 (en) 2015-03-16 2018-10-09 Tokyo Electron Limited Method of manufacturing Cu wiring
JP2017050304A (ja) 2015-08-31 2017-03-09 東京エレクトロン株式会社 半導体装置の製造方法
JP2019192892A (ja) 2018-04-18 2019-10-31 東京エレクトロン株式会社 処理システムおよび処理方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102318A (ja) * 1991-04-05 1993-04-23 Internatl Business Mach Corp <Ibm> 銅合金導電プラグ形成方法及び装置
JP2000208627A (ja) * 1999-01-19 2000-07-28 Hitachi Ltd 半導体装置の製造方法
JP2001035850A (ja) * 1999-07-19 2001-02-09 Ebara Corp 半導体装置及びその製造方法
JP2005277390A (ja) * 2004-02-27 2005-10-06 Handotai Rikougaku Kenkyu Center:Kk 半導体装置及びその製造方法
JP2006278587A (ja) * 2005-03-29 2006-10-12 Matsushita Electric Ind Co Ltd 半導体装置の製造方法および製造装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05102318A (ja) * 1991-04-05 1993-04-23 Internatl Business Mach Corp <Ibm> 銅合金導電プラグ形成方法及び装置
JP2000208627A (ja) * 1999-01-19 2000-07-28 Hitachi Ltd 半導体装置の製造方法
JP2001035850A (ja) * 1999-07-19 2001-02-09 Ebara Corp 半導体装置及びその製造方法
JP2005277390A (ja) * 2004-02-27 2005-10-06 Handotai Rikougaku Kenkyu Center:Kk 半導体装置及びその製造方法
JP2006278587A (ja) * 2005-03-29 2006-10-12 Matsushita Electric Ind Co Ltd 半導体装置の製造方法および製造装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103730410A (zh) * 2012-10-10 2014-04-16 格罗方德半导体公司 于通孔底部具有自行成阻障层的半导体装置

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