WO2008129602A1 - 表面形状センサとその製造方法 - Google Patents

表面形状センサとその製造方法 Download PDF

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Publication number
WO2008129602A1
WO2008129602A1 PCT/JP2007/057670 JP2007057670W WO2008129602A1 WO 2008129602 A1 WO2008129602 A1 WO 2008129602A1 JP 2007057670 W JP2007057670 W JP 2007057670W WO 2008129602 A1 WO2008129602 A1 WO 2008129602A1
Authority
WO
WIPO (PCT)
Prior art keywords
insulating film
film
surface morphology
morphology sensor
detection electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2007/057670
Other languages
English (en)
French (fr)
Inventor
Takahiro Yamagata
Kouichi Nagai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Semiconductor Ltd
Original Assignee
Fujitsu Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Semiconductor Ltd filed Critical Fujitsu Semiconductor Ltd
Priority to CN2007800524626A priority Critical patent/CN101663558B/zh
Priority to JP2009510640A priority patent/JP4764508B2/ja
Priority to PCT/JP2007/057670 priority patent/WO2008129602A1/ja
Priority to KR1020097019898A priority patent/KR101113145B1/ko
Publication of WO2008129602A1 publication Critical patent/WO2008129602A1/ja
Priority to US12/548,027 priority patent/US8294230B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/28—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring contours or curvatures
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06V—IMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V40/00—Recognition of biometric, human-related or animal-related patterns in image or video data
    • G06V40/10—Human or animal bodies, e.g. vehicle occupants or pedestrians; Body parts, e.g. hands
    • G06V40/12—Fingerprints or palmprints
    • G06V40/13—Sensors therefor
    • G06V40/1306—Sensors therefor non-optical, e.g. ultrasonic or capacitive sensing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B7/00—Measuring arrangements characterised by the use of electric or magnetic techniques
    • G01B7/34—Measuring arrangements characterised by the use of electric or magnetic techniques for measuring roughness or irregularity of surfaces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Multimedia (AREA)
  • Theoretical Computer Science (AREA)
  • Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Pressure Sensors (AREA)

Abstract

【課題】機械的強度を維持しつつ、感度向上を図ることが可能な表面形状センサとその製造方法を提供する。 【手段】半導体基板10の上方に形成された平坦な上面を有する層間絶縁膜40と、層間絶縁膜40上に形成された検出電極膜42aと、検出電極膜42a及び層間絶縁膜40上に形成された、窒化シリコン膜が表面に露出する上部絶縁膜110と、上部絶縁膜110の上に堆積され、検出電極膜42aの上に窓54aが形成されたテトラヘデラルアモルファスカーボン(ta-C)膜からなる保護絶縁膜54とを有することを特徴とする表面形状センサ。
PCT/JP2007/057670 2007-04-05 2007-04-05 表面形状センサとその製造方法 Ceased WO2008129602A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN2007800524626A CN101663558B (zh) 2007-04-05 2007-04-05 表面形状传感器及其制造方法
JP2009510640A JP4764508B2 (ja) 2007-04-05 2007-04-05 表面形状センサとその製造方法
PCT/JP2007/057670 WO2008129602A1 (ja) 2007-04-05 2007-04-05 表面形状センサとその製造方法
KR1020097019898A KR101113145B1 (ko) 2007-04-05 2007-04-05 표면 형상 센서와 그 제조 방법
US12/548,027 US8294230B2 (en) 2007-04-05 2009-08-26 Surface profile sensor and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/057670 WO2008129602A1 (ja) 2007-04-05 2007-04-05 表面形状センサとその製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/548,027 Continuation US8294230B2 (en) 2007-04-05 2009-08-26 Surface profile sensor and method for manufacturing the same

Publications (1)

Publication Number Publication Date
WO2008129602A1 true WO2008129602A1 (ja) 2008-10-30

Family

ID=39875151

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/057670 Ceased WO2008129602A1 (ja) 2007-04-05 2007-04-05 表面形状センサとその製造方法

Country Status (5)

Country Link
US (1) US8294230B2 (ja)
JP (1) JP4764508B2 (ja)
KR (1) KR101113145B1 (ja)
CN (1) CN101663558B (ja)
WO (1) WO2008129602A1 (ja)

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JP2022058589A (ja) * 2015-09-30 2022-04-12 アップル インコーポレイテッド 生体センサを組み込んだ入力デバイス

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JP6387850B2 (ja) * 2015-02-10 2018-09-12 株式会社デンソー 半導体装置およびその製造方法
TWI563253B (en) 2015-04-14 2016-12-21 Lee Mei Yen Composite substrate sensor device and method of manufacturing such sensor device
CN106056033B (zh) 2015-04-14 2019-07-05 李美燕 复合基板感测装置及其制造方法
CN106991361A (zh) * 2016-01-21 2017-07-28 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制备方法、电子装置
US10147704B2 (en) 2016-05-17 2018-12-04 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacturing thereof
CN108121933B (zh) * 2016-11-28 2022-02-25 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制备方法、电子装置
KR102703414B1 (ko) * 2017-01-25 2024-09-09 삼성디스플레이 주식회사 차량용 표시 장치 및 이를 포함하는 차량 제어 시스템
CN108734709B (zh) * 2018-05-29 2022-03-25 西安工程大学 一种绝缘子凸缘形状参数识别与破坏检测方法
KR102797322B1 (ko) * 2022-07-05 2025-04-22 고려대학교 산학협력단 전기화학적 막탈기 장치

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JP2022058589A (ja) * 2015-09-30 2022-04-12 アップル インコーポレイテッド 生体センサを組み込んだ入力デバイス
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Also Published As

Publication number Publication date
KR101113145B1 (ko) 2012-03-13
US20090309180A1 (en) 2009-12-17
CN101663558A (zh) 2010-03-03
US8294230B2 (en) 2012-10-23
JPWO2008129602A1 (ja) 2010-07-22
JP4764508B2 (ja) 2011-09-07
KR20100005044A (ko) 2010-01-13
CN101663558B (zh) 2011-06-22

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