WO2008126695A1 - 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 - Google Patents

窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 Download PDF

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Publication number
WO2008126695A1
WO2008126695A1 PCT/JP2008/056013 JP2008056013W WO2008126695A1 WO 2008126695 A1 WO2008126695 A1 WO 2008126695A1 JP 2008056013 W JP2008056013 W JP 2008056013W WO 2008126695 A1 WO2008126695 A1 WO 2008126695A1
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Prior art keywords
nitride semiconductor
emitting device
light emitting
producing
same
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PCT/JP2008/056013
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English (en)
French (fr)
Inventor
Katsushi Akita
Takashi Kyono
Keiji Ishibashi
Hitoshi Kasai
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Sumitomo Electric Industries, Ltd.
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Priority to CN2008800004293A priority Critical patent/CN101542760B/zh
Priority to EP08739137A priority patent/EP2043167A4/en
Priority to US12/307,586 priority patent/US20100032644A1/en
Publication of WO2008126695A1 publication Critical patent/WO2008126695A1/ja

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26Materials of the light emitting region
    • H01L33/30Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02387Group 13/15 materials
    • H01L21/02389Nitrides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/02433Crystal orientation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02455Group 13/15 materials
    • H01L21/02458Nitrides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02538Group 13/15 materials
    • H01L21/0254Nitrides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

 活性層17は、波長440nm以上550nm以下の範囲の発光波長の光を発生するように設けられる。第1導電型窒化ガリウム系半導体領域13、活性層17および第2導電型窒化ガリウム系半導体領域15は、所定の軸Axの方向に配列されている。 活性層17は、六方晶系InXGa1-XN(0.16≦X≦0.4、Xは歪み組成)からなる井戸層を含み、インジウム組成Xは歪み組成で表されている。六方晶系InXGa1-XNのm面が所定の軸Axの方向に向いている。井戸層の厚さは3nmより大きく20nm以下である。井戸層の厚みを3nm以上にすることによって、発光波長440nm以上の発光素子を作製することができる。
PCT/JP2008/056013 2007-04-06 2008-03-28 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 WO2008126695A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008800004293A CN101542760B (zh) 2007-04-06 2008-03-28 氮化物半导体发光器件以及氮化物半导体发光器件的制造方法
EP08739137A EP2043167A4 (en) 2007-04-06 2008-03-28 NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING SAME
US12/307,586 US20100032644A1 (en) 2007-04-06 2008-03-28 Nitride Semiconductor Light-Emitting Device and Nitride Semiconductor Light-Emitting Device Fabrication Method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007100930A JP2008258503A (ja) 2007-04-06 2007-04-06 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法
JP2007-100930 2007-04-06

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WO2008126695A1 true WO2008126695A1 (ja) 2008-10-23

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Country Status (7)

Country Link
US (1) US20100032644A1 (ja)
EP (1) EP2043167A4 (ja)
JP (1) JP2008258503A (ja)
KR (1) KR20090124908A (ja)
CN (1) CN101542760B (ja)
TW (1) TW200901517A (ja)
WO (1) WO2008126695A1 (ja)

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JP2010232518A (ja) * 2009-03-27 2010-10-14 Sharp Corp 窒化物半導体発光素子及びその製造方法、並びに、半導体光学装置
EP2273573A1 (en) * 2009-03-11 2011-01-12 Panasonic Corporation Nitride semiconductor element and method for manufacturing same
JP2011014746A (ja) * 2009-07-02 2011-01-20 Sharp Corp 窒化物半導体素子及びその製造方法、並びに、半導体装置
JP2011029237A (ja) * 2009-07-21 2011-02-10 Sharp Corp 窒化物半導体素子及びその製造方法、並びに、半導体装置
WO2011058682A1 (ja) * 2009-11-12 2011-05-19 パナソニック株式会社 窒化ガリウム系化合物半導体発光素子
US8344413B2 (en) 2009-05-29 2013-01-01 Sharp Kabushiki Kaisha Nitride semiconductor wafer, nitride semiconductor chip, and method of manufacture of nitride semiconductor chip
US8664688B2 (en) 2009-03-27 2014-03-04 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting chip, method of manufacture thereof, and semiconductor optical device
JP2014078756A (ja) * 2014-01-09 2014-05-01 Mitsubishi Chemicals Corp 窒化物半導体
US8729587B2 (en) 2010-04-01 2014-05-20 Panasonic Corporation Nitride semiconductor element and manufacturing method therefor
TWI495159B (zh) * 2012-09-07 2015-08-01 Mitsubishi Chem Corp 發光二極體元件及發光裝置

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JP2010123803A (ja) * 2008-11-20 2010-06-03 Mitsubishi Chemicals Corp 窒化物半導体
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US9711681B2 (en) 2008-11-20 2017-07-18 Mitsubishi Chemical Corporation Nitride semiconductor
US8624220B2 (en) 2008-11-20 2014-01-07 Mitsubishi Chemical Corporation Nitride semiconductor
EP2273573A1 (en) * 2009-03-11 2011-01-12 Panasonic Corporation Nitride semiconductor element and method for manufacturing same
CN101981713A (zh) * 2009-03-11 2011-02-23 松下电器产业株式会社 氮化物半导体元件及其制造方法
EP2273573A4 (en) * 2009-03-11 2012-11-14 Panasonic Corp NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME
JP2010232518A (ja) * 2009-03-27 2010-10-14 Sharp Corp 窒化物半導体発光素子及びその製造方法、並びに、半導体光学装置
US8664688B2 (en) 2009-03-27 2014-03-04 Sharp Kabushiki Kaisha Nitride semiconductor light-emitting chip, method of manufacture thereof, and semiconductor optical device
US8344413B2 (en) 2009-05-29 2013-01-01 Sharp Kabushiki Kaisha Nitride semiconductor wafer, nitride semiconductor chip, and method of manufacture of nitride semiconductor chip
JP2011014746A (ja) * 2009-07-02 2011-01-20 Sharp Corp 窒化物半導体素子及びその製造方法、並びに、半導体装置
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US8546167B2 (en) 2009-11-12 2013-10-01 Panasonic Corporation Gallium nitride-based compound semiconductor light-emitting element
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WO2011058682A1 (ja) * 2009-11-12 2011-05-19 パナソニック株式会社 窒化ガリウム系化合物半導体発光素子
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CN101542760B (zh) 2012-03-21
CN101542760A (zh) 2009-09-23
JP2008258503A (ja) 2008-10-23
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