WO2008126695A1 - 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 - Google Patents
窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 Download PDFInfo
- Publication number
- WO2008126695A1 WO2008126695A1 PCT/JP2008/056013 JP2008056013W WO2008126695A1 WO 2008126695 A1 WO2008126695 A1 WO 2008126695A1 JP 2008056013 W JP2008056013 W JP 2008056013W WO 2008126695 A1 WO2008126695 A1 WO 2008126695A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- nitride semiconductor
- emitting device
- light emitting
- producing
- same
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 150000004767 nitrides Chemical class 0.000 title 1
- 238000009472 formulation Methods 0.000 abstract 3
- 239000000203 mixture Substances 0.000 abstract 3
- 229910002601 GaN Inorganic materials 0.000 abstract 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2008800004293A CN101542760B (zh) | 2007-04-06 | 2008-03-28 | 氮化物半导体发光器件以及氮化物半导体发光器件的制造方法 |
EP08739137A EP2043167A4 (en) | 2007-04-06 | 2008-03-28 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING SAME |
US12/307,586 US20100032644A1 (en) | 2007-04-06 | 2008-03-28 | Nitride Semiconductor Light-Emitting Device and Nitride Semiconductor Light-Emitting Device Fabrication Method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007100930A JP2008258503A (ja) | 2007-04-06 | 2007-04-06 | 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 |
JP2007-100930 | 2007-04-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008126695A1 true WO2008126695A1 (ja) | 2008-10-23 |
Family
ID=39863802
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/056013 WO2008126695A1 (ja) | 2007-04-06 | 2008-03-28 | 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100032644A1 (ja) |
EP (1) | EP2043167A4 (ja) |
JP (1) | JP2008258503A (ja) |
KR (1) | KR20090124908A (ja) |
CN (1) | CN101542760B (ja) |
TW (1) | TW200901517A (ja) |
WO (1) | WO2008126695A1 (ja) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010058820A1 (ja) * | 2008-11-20 | 2010-05-27 | 三菱化学株式会社 | 窒化物半導体 |
JP2010232518A (ja) * | 2009-03-27 | 2010-10-14 | Sharp Corp | 窒化物半導体発光素子及びその製造方法、並びに、半導体光学装置 |
EP2273573A1 (en) * | 2009-03-11 | 2011-01-12 | Panasonic Corporation | Nitride semiconductor element and method for manufacturing same |
JP2011014746A (ja) * | 2009-07-02 | 2011-01-20 | Sharp Corp | 窒化物半導体素子及びその製造方法、並びに、半導体装置 |
JP2011029237A (ja) * | 2009-07-21 | 2011-02-10 | Sharp Corp | 窒化物半導体素子及びその製造方法、並びに、半導体装置 |
WO2011058682A1 (ja) * | 2009-11-12 | 2011-05-19 | パナソニック株式会社 | 窒化ガリウム系化合物半導体発光素子 |
US8344413B2 (en) | 2009-05-29 | 2013-01-01 | Sharp Kabushiki Kaisha | Nitride semiconductor wafer, nitride semiconductor chip, and method of manufacture of nitride semiconductor chip |
US8664688B2 (en) | 2009-03-27 | 2014-03-04 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting chip, method of manufacture thereof, and semiconductor optical device |
JP2014078756A (ja) * | 2014-01-09 | 2014-05-01 | Mitsubishi Chemicals Corp | 窒化物半導体 |
US8729587B2 (en) | 2010-04-01 | 2014-05-20 | Panasonic Corporation | Nitride semiconductor element and manufacturing method therefor |
TWI495159B (zh) * | 2012-09-07 | 2015-08-01 | Mitsubishi Chem Corp | 發光二極體元件及發光裝置 |
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009158647A (ja) * | 2007-12-26 | 2009-07-16 | Sharp Corp | 窒化物系半導体レーザ素子およびその製造方法 |
US20090309127A1 (en) * | 2008-06-13 | 2009-12-17 | Soraa, Inc. | Selective area epitaxy growth method and structure |
US8847249B2 (en) * | 2008-06-16 | 2014-09-30 | Soraa, Inc. | Solid-state optical device having enhanced indium content in active regions |
CN102084504B (zh) * | 2008-09-09 | 2013-07-17 | 松下电器产业株式会社 | 氮化物类半导体发光元件及其制造方法 |
WO2010052810A1 (ja) * | 2008-11-06 | 2010-05-14 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
JP2010205835A (ja) * | 2009-03-02 | 2010-09-16 | Sumitomo Electric Ind Ltd | 窒化ガリウム系半導体光素子、窒化ガリウム系半導体光素子を製造する方法、及びエピタキシャルウエハ |
WO2010113238A1 (ja) | 2009-04-03 | 2010-10-07 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
EP2418696A4 (en) | 2009-04-09 | 2014-02-19 | Panasonic Corp | NITRIDE SEMICONDUCTOR LIGHT ELEMENT, LIGHTING DEVICE, LIQUID CRYSTAL DISPLAY DEVICE, METHOD FOR PRODUCING A NITRIDE SEMICONDUCTOR LIGHT ELEMENT AND METHOD FOR PRODUCING A LIGHTING DEVICE |
US20110001126A1 (en) * | 2009-07-02 | 2011-01-06 | Sharp Kabushiki Kaisha | Nitride semiconductor chip, method of fabrication thereof, and semiconductor device |
JP4905514B2 (ja) | 2009-07-15 | 2012-03-28 | 住友電気工業株式会社 | 窒化物系半導体発光素子 |
JP5635246B2 (ja) * | 2009-07-15 | 2014-12-03 | 住友電気工業株式会社 | Iii族窒化物半導体光素子及びエピタキシャル基板 |
US20110042646A1 (en) * | 2009-08-21 | 2011-02-24 | Sharp Kabushiki Kaisha | Nitride semiconductor wafer, nitride semiconductor chip, method of manufacture thereof, and semiconductor device |
WO2011035265A1 (en) * | 2009-09-18 | 2011-03-24 | Soraa, Inc. | Power light emitting diode and method with current density operation |
US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
US9293644B2 (en) | 2009-09-18 | 2016-03-22 | Soraa, Inc. | Power light emitting diode and method with uniform current density operation |
US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
US8525221B2 (en) * | 2009-11-25 | 2013-09-03 | Toshiba Techno Center, Inc. | LED with improved injection efficiency |
CN102648535A (zh) | 2009-12-09 | 2012-08-22 | 松下电器产业株式会社 | 氮化物系半导体发光元件、照明装置、液晶显示装置以及照明装置的制造方法 |
JP4843122B2 (ja) * | 2009-12-25 | 2011-12-21 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
WO2011086620A1 (ja) * | 2010-01-18 | 2011-07-21 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
EP2555257A1 (en) * | 2010-04-01 | 2013-02-06 | Panasonic Corporation | Nitride semiconductor element and manufacturing method therefor |
JP4820465B1 (ja) * | 2010-04-02 | 2011-11-24 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
JP5361925B2 (ja) * | 2011-03-08 | 2013-12-04 | 株式会社東芝 | 半導体発光素子およびその製造方法 |
US9236530B2 (en) | 2011-04-01 | 2016-01-12 | Soraa, Inc. | Miscut bulk substrates |
US9312436B2 (en) * | 2011-05-16 | 2016-04-12 | Kabushiki Kaisha Toshiba | Nitride semiconductor device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer |
KR20130011374A (ko) * | 2011-07-21 | 2013-01-30 | 주식회사 칩테크놀러지 | 자외선 발광 다이오드용 다중 양자 우물 및 그의 제조 방법 |
US8686431B2 (en) | 2011-08-22 | 2014-04-01 | Soraa, Inc. | Gallium and nitrogen containing trilateral configuration for optical devices |
US9646827B1 (en) * | 2011-08-23 | 2017-05-09 | Soraa, Inc. | Method for smoothing surface of a substrate containing gallium and nitrogen |
KR101433548B1 (ko) * | 2011-09-12 | 2014-08-22 | 미쓰비시 가가꾸 가부시키가이샤 | 발광 다이오드 소자 |
JP5163970B1 (ja) * | 2011-09-12 | 2013-03-13 | 三菱化学株式会社 | 発光ダイオード素子 |
JP5234218B1 (ja) * | 2012-09-07 | 2013-07-10 | 三菱化学株式会社 | 発光ダイオード素子 |
JP5234220B1 (ja) * | 2012-09-07 | 2013-07-10 | 三菱化学株式会社 | 発光ダイオード素子 |
TWI524551B (zh) | 2012-11-19 | 2016-03-01 | 新世紀光電股份有限公司 | 氮化物半導體結構及半導體發光元件 |
TWI535055B (zh) | 2012-11-19 | 2016-05-21 | 新世紀光電股份有限公司 | 氮化物半導體結構及半導體發光元件 |
TWI499080B (zh) | 2012-11-19 | 2015-09-01 | Genesis Photonics Inc | 氮化物半導體結構及半導體發光元件 |
US9761763B2 (en) | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
CN103972340B (zh) * | 2013-01-25 | 2018-06-08 | 新世纪光电股份有限公司 | 氮化物半导体结构及半导体发光元件 |
JP2014167948A (ja) * | 2013-01-30 | 2014-09-11 | Mitsubishi Chemicals Corp | 発光ダイオード素子、発光ダイオード素子の製造方法および発光装置 |
WO2015015973A1 (ja) * | 2013-07-31 | 2015-02-05 | 富士電機株式会社 | 半導体装置の製造方法および半導体装置 |
US9410664B2 (en) | 2013-08-29 | 2016-08-09 | Soraa, Inc. | Circadian friendly LED light source |
US10199532B1 (en) * | 2017-09-08 | 2019-02-05 | Mikro Mesa Technology Co., Ltd. | Light-emitting diode and method for manufacturing the same |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998019375A1 (fr) * | 1996-10-30 | 1998-05-07 | Hitachi, Ltd. | Machine de traitement optique de l'information et dispositif a semi-conducteur emetteur de lumiere afferent |
JPH10135576A (ja) | 1996-02-23 | 1998-05-22 | Fujitsu Ltd | 半導体発光素子、光半導体素子、発光ダイオード及び表示装置 |
JPH10173232A (ja) * | 1998-01-16 | 1998-06-26 | Matsushita Electric Ind Co Ltd | 半導体発光素子及び半導体発光装置 |
JP2001160656A (ja) * | 1999-12-01 | 2001-06-12 | Sharp Corp | 窒化物系化合物半導体装置 |
JP2004104089A (ja) * | 2002-05-30 | 2004-04-02 | Sharp Corp | 高純度アンモニアを使用した窒化物半導体の製造方法 |
JP2005251922A (ja) * | 2004-03-03 | 2005-09-15 | Nagoya Kogyo Univ | 半導体発光素子 |
JP2005311374A (ja) * | 2004-04-21 | 2005-11-04 | Lumileds Lighting Us Llc | 歪みを制御したiii族窒化物発光装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3719047B2 (ja) * | 1999-06-07 | 2005-11-24 | 日亜化学工業株式会社 | 窒化物半導体素子 |
JP3929008B2 (ja) * | 2000-01-14 | 2007-06-13 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
JP3968968B2 (ja) * | 2000-07-10 | 2007-08-29 | 住友電気工業株式会社 | 単結晶GaN基板の製造方法 |
JP4307113B2 (ja) * | 2002-03-19 | 2009-08-05 | 宣彦 澤木 | 半導体発光素子およびその製造方法 |
JP4206086B2 (ja) * | 2004-08-03 | 2009-01-07 | 住友電気工業株式会社 | 窒化物半導体発光素子および窒化物半導体発光素子を製造する方法 |
US7751455B2 (en) * | 2004-12-14 | 2010-07-06 | Palo Alto Research Center Incorporated | Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure |
EP1900013A4 (en) * | 2005-06-01 | 2010-09-01 | Univ California | TECHNOLOGY FOR GROWTH AND MANUFACTURE OF SEMIPOLARS (GA, AL, IN, B) N THIN FILMS, HETEROSTRUCTURES AND COMPONENTS |
JP2007103774A (ja) * | 2005-10-06 | 2007-04-19 | Showa Denko Kk | Iii族窒化物半導体積層構造体およびその製造方法 |
JP2008108973A (ja) * | 2006-10-26 | 2008-05-08 | Rohm Co Ltd | 半導体発光素子 |
-
2007
- 2007-04-06 JP JP2007100930A patent/JP2008258503A/ja active Pending
-
2008
- 2008-03-28 US US12/307,586 patent/US20100032644A1/en not_active Abandoned
- 2008-03-28 KR KR1020087029818A patent/KR20090124908A/ko not_active Application Discontinuation
- 2008-03-28 WO PCT/JP2008/056013 patent/WO2008126695A1/ja active Application Filing
- 2008-03-28 EP EP08739137A patent/EP2043167A4/en not_active Withdrawn
- 2008-03-28 CN CN2008800004293A patent/CN101542760B/zh not_active Expired - Fee Related
- 2008-04-03 TW TW097112434A patent/TW200901517A/zh unknown
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10135576A (ja) | 1996-02-23 | 1998-05-22 | Fujitsu Ltd | 半導体発光素子、光半導体素子、発光ダイオード及び表示装置 |
WO1998019375A1 (fr) * | 1996-10-30 | 1998-05-07 | Hitachi, Ltd. | Machine de traitement optique de l'information et dispositif a semi-conducteur emetteur de lumiere afferent |
JPH10173232A (ja) * | 1998-01-16 | 1998-06-26 | Matsushita Electric Ind Co Ltd | 半導体発光素子及び半導体発光装置 |
JP2001160656A (ja) * | 1999-12-01 | 2001-06-12 | Sharp Corp | 窒化物系化合物半導体装置 |
JP2004104089A (ja) * | 2002-05-30 | 2004-04-02 | Sharp Corp | 高純度アンモニアを使用した窒化物半導体の製造方法 |
JP2005251922A (ja) * | 2004-03-03 | 2005-09-15 | Nagoya Kogyo Univ | 半導体発光素子 |
JP2005311374A (ja) * | 2004-04-21 | 2005-11-04 | Lumileds Lighting Us Llc | 歪みを制御したiii族窒化物発光装置 |
Non-Patent Citations (3)
Title |
---|
JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 45, no. 45, 2006, pages L1197 - L1199 |
JAPANESE JOURNAL OFAPPLIED PHYSICS, vol. 46, no. 7, 2007, pages L126 - L128 |
See also references of EP2043167A4 * |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010123803A (ja) * | 2008-11-20 | 2010-06-03 | Mitsubishi Chemicals Corp | 窒化物半導体 |
WO2010058820A1 (ja) * | 2008-11-20 | 2010-05-27 | 三菱化学株式会社 | 窒化物半導体 |
US9711681B2 (en) | 2008-11-20 | 2017-07-18 | Mitsubishi Chemical Corporation | Nitride semiconductor |
US8624220B2 (en) | 2008-11-20 | 2014-01-07 | Mitsubishi Chemical Corporation | Nitride semiconductor |
EP2273573A1 (en) * | 2009-03-11 | 2011-01-12 | Panasonic Corporation | Nitride semiconductor element and method for manufacturing same |
CN101981713A (zh) * | 2009-03-11 | 2011-02-23 | 松下电器产业株式会社 | 氮化物半导体元件及其制造方法 |
EP2273573A4 (en) * | 2009-03-11 | 2012-11-14 | Panasonic Corp | NITRIDE SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING THE SAME |
JP2010232518A (ja) * | 2009-03-27 | 2010-10-14 | Sharp Corp | 窒化物半導体発光素子及びその製造方法、並びに、半導体光学装置 |
US8664688B2 (en) | 2009-03-27 | 2014-03-04 | Sharp Kabushiki Kaisha | Nitride semiconductor light-emitting chip, method of manufacture thereof, and semiconductor optical device |
US8344413B2 (en) | 2009-05-29 | 2013-01-01 | Sharp Kabushiki Kaisha | Nitride semiconductor wafer, nitride semiconductor chip, and method of manufacture of nitride semiconductor chip |
JP2011014746A (ja) * | 2009-07-02 | 2011-01-20 | Sharp Corp | 窒化物半導体素子及びその製造方法、並びに、半導体装置 |
JP2011029237A (ja) * | 2009-07-21 | 2011-02-10 | Sharp Corp | 窒化物半導体素子及びその製造方法、並びに、半導体装置 |
US8546167B2 (en) | 2009-11-12 | 2013-10-01 | Panasonic Corporation | Gallium nitride-based compound semiconductor light-emitting element |
US20120153258A1 (en) * | 2009-11-12 | 2012-06-21 | Panasonic Corporation | Gallium nitride-based compound semiconductor light-emitting element |
WO2011058682A1 (ja) * | 2009-11-12 | 2011-05-19 | パナソニック株式会社 | 窒化ガリウム系化合物半導体発光素子 |
US8729587B2 (en) | 2010-04-01 | 2014-05-20 | Panasonic Corporation | Nitride semiconductor element and manufacturing method therefor |
TWI495159B (zh) * | 2012-09-07 | 2015-08-01 | Mitsubishi Chem Corp | 發光二極體元件及發光裝置 |
JP2014078756A (ja) * | 2014-01-09 | 2014-05-01 | Mitsubishi Chemicals Corp | 窒化物半導体 |
Also Published As
Publication number | Publication date |
---|---|
TW200901517A (en) | 2009-01-01 |
US20100032644A1 (en) | 2010-02-11 |
KR20090124908A (ko) | 2009-12-03 |
EP2043167A1 (en) | 2009-04-01 |
CN101542760B (zh) | 2012-03-21 |
CN101542760A (zh) | 2009-09-23 |
JP2008258503A (ja) | 2008-10-23 |
EP2043167A4 (en) | 2011-01-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2008126695A1 (ja) | 窒化物系半導体発光素子、および窒化物系半導体発光素子を作製する方法 | |
TW200713642A (en) | Highly efficient III-nitride-based top emission type light emitting device having large area and high capacity and method of manufacturing the same | |
WO2008078302A3 (en) | Iii-nitride light emitting diodes grown on templates to reduce strain | |
WO2008054994A3 (en) | Deep ultraviolet light emitting device and method for fabricating same | |
TW200731563A (en) | Nanostructure having a nitride-based quantum well and light emitting diode employing the same | |
TW200603436A (en) | Photonic crystal light emitting device | |
WO2009120975A3 (en) | Superlattice free ultraviolet emitter | |
WO2009005245A3 (en) | Compound semiconductor light emitting device | |
WO2009088410A3 (en) | Light emitting devices with high efficiency phospor structures | |
TW200715607A (en) | Grown photonic crystals in semiconductor light emitting devices | |
EP2365546A3 (en) | Light emitting device and light emitting device package | |
WO2006097868A3 (en) | Wavelength-converted semiconductor light-emitting device | |
WO2009120998A3 (en) | Low resistance ultraviolet light emitting device and method of fabricating the same | |
WO2008112062A3 (en) | Quantum dot light emitting device | |
MY183934A (en) | Light emitting diode and fabrication method thereof | |
WO2009072787A3 (en) | Light emitting device using compound semiconductor | |
WO2012039754A3 (en) | Light emitting and lasing semiconductor methods and devices | |
WO2008093573A1 (ja) | 半導体レーザ | |
WO2009057254A1 (ja) | 半導体レーザ装置 | |
Huang et al. | Investigation of GaN-based light emitting diodes with nano-hole patterned sapphire substrate (NHPSS) by nano-imprint lithography | |
WO2008153068A1 (ja) | 窒化物系半導体装置およびその製造方法 | |
WO2009007919A3 (en) | Organic light emitting diodes having improved optical out-coupling | |
WO2011021872A3 (ko) | 3족 질화물 반도체 발광소자 및 그 제조방법 | |
WO2010094042A3 (en) | Terahertz quantum cascade lasers (qcls) | |
Tsai et al. | Enhanced light output of InGaN LEDs with a roughened p-GaN surface using different TMGa flow rates in p-AlGaN layer |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200880000429.3 Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020087029818 Country of ref document: KR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08739137 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2008739137 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12307586 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |