WO2008093573A1 - 半導体レーザ - Google Patents

半導体レーザ Download PDF

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Publication number
WO2008093573A1
WO2008093573A1 PCT/JP2008/050850 JP2008050850W WO2008093573A1 WO 2008093573 A1 WO2008093573 A1 WO 2008093573A1 JP 2008050850 W JP2008050850 W JP 2008050850W WO 2008093573 A1 WO2008093573 A1 WO 2008093573A1
Authority
WO
WIPO (PCT)
Prior art keywords
face
side end
axis side
axis
semiconductor laser
Prior art date
Application number
PCT/JP2008/050850
Other languages
English (en)
French (fr)
Inventor
Kuniyoshi Okamoto
Hiroaki Ohta
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Publication of WO2008093573A1 publication Critical patent/WO2008093573A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H01S5/0283—Optically inactive coating on the facet, e.g. half-wave coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

　この半導体レーザは、ｃ面以外の結晶面を結晶成長主面とした六方晶構造のIII族窒化物半導体からなるファブリペロー型半導体レーザである。この半導体レーザは、ｃ軸と交差する平面に平行な＋ｃ軸側端面および－ｃ軸側端面を有し、＋ｃ軸側端面からのレーザ出力が、－ｃ軸側端面からのレーザ出力よりも大きくなるようにして、前記＋ｃ軸側端面をレーザ出射端面としてある。ｃ軸の前記結晶成長主面への投影ベクトルに平行に導波路が形成されていることが好ましい。また、前記結晶成長主面がｍ面であることが好ましい。さらに、前記＋ｃ軸側端面が＋ｃ面であり、前記－ｃ軸側端面が－ｃ面であることが好ましい。
PCT/JP2008/050850 2007-01-30 2008-01-23 半導体レーザ WO2008093573A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007019915A JP2008187044A (ja) 2007-01-30 2007-01-30 半導体レーザ
JP2007-019915 2007-01-30

Publications (1)

Publication Number Publication Date
WO2008093573A1 true WO2008093573A1 (ja) 2008-08-07

Family

ID=39673885

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050850 WO2008093573A1 (ja) 2007-01-30 2008-01-23 半導体レーザ

Country Status (3)

Country Link
JP (1) JP2008187044A (ja)
TW (1) TW200845524A (ja)
WO (1) WO2008093573A1 (ja)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056282A (ja) * 2008-08-28 2010-03-11 Tohoku Univ 窒化物半導体発光素子およびその製造方法
WO2010100699A1 (ja) * 2009-03-06 2010-09-10 パナソニック株式会社 窒化物半導体の結晶成長方法および半導体装置の製造方法
CN102668279A (zh) * 2009-12-25 2012-09-12 住友电气工业株式会社 Iii族氮化物半导体激光器元件及制作iii族氮化物半导体激光器元件的方法
CN102696158A (zh) * 2010-01-07 2012-09-26 住友电气工业株式会社 Iii族氮化物半导体激光器元件、制作iii族氮化物半导体激光器元件的方法及评估因形成刻划槽所致损伤的方法
EP2518840A1 (en) * 2009-12-25 2012-10-31 Sumitomo Electric Industries, Ltd. Group iii nitride semiconductor laser element, method for producing group iii nitride semiconductor laser element, and epitaxial substrate
EP2518841A1 (en) * 2009-12-25 2012-10-31 Sumitomo Electric Industries, Ltd. Group-iii nitride semiconductor laser element, and method of manufacturing group-iii nitride semiconductor laser element

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010123920A (ja) * 2008-10-20 2010-06-03 Sumitomo Electric Ind Ltd 窒化物系半導体発光素子を作製する方法、及びエピタキシャルウエハを作製する方法
JP5397136B2 (ja) * 2009-09-30 2014-01-22 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
JP5387302B2 (ja) 2009-09-30 2014-01-15 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
JP5365679B2 (ja) * 2009-12-25 2013-12-11 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子
JP5348216B2 (ja) * 2011-10-20 2013-11-20 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法
JP5348217B2 (ja) * 2011-10-20 2013-11-20 住友電気工業株式会社 Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216497A (ja) * 1999-01-22 2000-08-04 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP2001156383A (ja) * 1999-09-16 2001-06-08 Furukawa Electric Co Ltd:The 半導体レーザ素子
JP2001217506A (ja) * 2000-02-03 2001-08-10 Ricoh Co Ltd 半導体基板およびその作製方法および発光素子
JP2005531154A (ja) * 2002-06-26 2005-10-13 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン 窒化物半導体レーザ素子及びその性能を向上させる方法
JP2006245564A (ja) * 2005-02-07 2006-09-14 Matsushita Electric Ind Co Ltd 半導体装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000216497A (ja) * 1999-01-22 2000-08-04 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP2001156383A (ja) * 1999-09-16 2001-06-08 Furukawa Electric Co Ltd:The 半導体レーザ素子
JP2001217506A (ja) * 2000-02-03 2001-08-10 Ricoh Co Ltd 半導体基板およびその作製方法および発光素子
JP2005531154A (ja) * 2002-06-26 2005-10-13 アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン 窒化物半導体レーザ素子及びその性能を向上させる方法
JP2006245564A (ja) * 2005-02-07 2006-09-14 Matsushita Electric Ind Co Ltd 半導体装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056282A (ja) * 2008-08-28 2010-03-11 Tohoku Univ 窒化物半導体発光素子およびその製造方法
WO2010100699A1 (ja) * 2009-03-06 2010-09-10 パナソニック株式会社 窒化物半導体の結晶成長方法および半導体装置の製造方法
JP4647723B2 (ja) * 2009-03-06 2011-03-09 パナソニック株式会社 窒化物半導体の結晶成長方法および半導体装置の製造方法
JPWO2010100699A1 (ja) * 2009-03-06 2012-09-06 パナソニック株式会社 窒化物半導体の結晶成長方法および半導体装置の製造方法
CN102668279A (zh) * 2009-12-25 2012-09-12 住友电气工业株式会社 Iii族氮化物半导体激光器元件及制作iii族氮化物半导体激光器元件的方法
EP2518840A1 (en) * 2009-12-25 2012-10-31 Sumitomo Electric Industries, Ltd. Group iii nitride semiconductor laser element, method for producing group iii nitride semiconductor laser element, and epitaxial substrate
EP2518841A1 (en) * 2009-12-25 2012-10-31 Sumitomo Electric Industries, Ltd. Group-iii nitride semiconductor laser element, and method of manufacturing group-iii nitride semiconductor laser element
EP2518841A4 (en) * 2009-12-25 2014-12-31 Sumitomo Electric Industries GROUP III NITRIDE SEMI-CONDUCTIVE LASER ELEMENT, AND METHOD FOR MANUFACTURING GROUP III NITRIDE SEMI-CONDUCTIVE LASER ELEMENT
EP2518840A4 (en) * 2009-12-25 2014-12-31 Sumitomo Electric Industries GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT, METHOD FOR MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LASER ELEMENT, AND EPITAXIAL SUBSTRATE
CN102696158A (zh) * 2010-01-07 2012-09-26 住友电气工业株式会社 Iii族氮化物半导体激光器元件、制作iii族氮化物半导体激光器元件的方法及评估因形成刻划槽所致损伤的方法

Also Published As

Publication number Publication date
TW200845524A (en) 2008-11-16
JP2008187044A (ja) 2008-08-14

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