WO2008123142A1 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
WO2008123142A1
WO2008123142A1 PCT/JP2008/055278 JP2008055278W WO2008123142A1 WO 2008123142 A1 WO2008123142 A1 WO 2008123142A1 JP 2008055278 W JP2008055278 W JP 2008055278W WO 2008123142 A1 WO2008123142 A1 WO 2008123142A1
Authority
WO
WIPO (PCT)
Prior art keywords
ground electrode
processing apparatus
dielectric member
plasma processing
guide hole
Prior art date
Application number
PCT/JP2008/055278
Other languages
English (en)
French (fr)
Inventor
Hiroto Takeuchi
Yuichi Nakamori
Syunsuke Kunugi
Original Assignee
Sekisui Chemical Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co., Ltd. filed Critical Sekisui Chemical Co., Ltd.
Priority to KR1020097019106A priority Critical patent/KR101087445B1/ko
Priority to JP2009509075A priority patent/JPWO2008123142A1/ja
Publication of WO2008123142A1 publication Critical patent/WO2008123142A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/2406—Generating plasma using dielectric barrier discharges, i.e. with a dielectric interposed between the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning In General (AREA)

Abstract

【課題】プラズマ処理装置の接地電極における噴出口の内面に異常放電が落ちるのを防止する。 【解決手段】プラズマ処理装置の接地電極４０における電界印加電極３０を向く放電面４２上に誘電部材６０を配置する。誘電部材６０には電極間の放電空間１ｐに連なる噴出導孔６２を形成し、接地電極４０には噴出導孔６２に連なる噴出口４１を形成する。誘電部材６０における噴出導孔６２の内面を、接地電極４０における噴出口４１の内面より突出させる。誘電部材６０には、接地電極４０との当接面６３から面一に延長された段差面６４を設ける。
PCT/JP2008/055278 2007-03-27 2008-03-21 プラズマ処理装置 WO2008123142A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020097019106A KR101087445B1 (ko) 2007-03-27 2008-03-21 플라즈마 처리 장치
JP2009509075A JPWO2008123142A1 (ja) 2007-03-27 2008-03-21 プラズマ処理装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007082049 2007-03-27
JP2007-082049 2007-03-27

Publications (1)

Publication Number Publication Date
WO2008123142A1 true WO2008123142A1 (ja) 2008-10-16

Family

ID=39830639

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055278 WO2008123142A1 (ja) 2007-03-27 2008-03-21 プラズマ処理装置

Country Status (5)

Country Link
JP (1) JPWO2008123142A1 (ja)
KR (1) KR101087445B1 (ja)
CN (1) CN101658076A (ja)
TW (1) TW200904262A (ja)
WO (1) WO2008123142A1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011154973A (ja) * 2010-01-28 2011-08-11 Mitsubishi Electric Corp プラズマ処理装置及びプラズマ処理方法
JP2012182026A (ja) * 2011-03-01 2012-09-20 Kazuo Shimizu プラズマ電極
WO2013040476A1 (en) 2011-09-15 2013-03-21 Cold Plasma Medical Technologies, Inc. Cold plasma treatment devices and associated methods
EP2306792A3 (de) * 2009-09-24 2013-04-17 Fachhochschule Hildesheim / Holzminden / Göttingen Verfahren und Vorrichtung zum Behandeln von Objekten mit einem physikalischen Plasma bei Atmosphärendruck
WO2018104988A1 (ja) * 2016-12-05 2018-06-14 東芝三菱電機産業システム株式会社 活性ガス生成装置
WO2019138456A1 (ja) * 2018-01-10 2019-07-18 東芝三菱電機産業システム株式会社 活性ガス生成装置
TWI675123B (zh) * 2018-01-10 2019-10-21 日商東芝三菱電機產業系統股份有限公司 活性氣體生成裝置及成膜處理裝置
JP2020161332A (ja) * 2019-03-27 2020-10-01 株式会社ニデック プラズマ処理装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5534359B2 (ja) * 2011-09-21 2014-06-25 日新イオン機器株式会社 スリット電極及びこれを備えた荷電粒子ビーム発生装置
US20170076917A1 (en) * 2015-09-11 2017-03-16 Applied Materials, Inc. Plasma Module With Slotted Ground Plate

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08227874A (ja) * 1995-02-21 1996-09-03 Mitsubishi Electric Corp 真空処理装置および真空処理方法
JPH0967685A (ja) * 1995-08-25 1997-03-11 Souzou Kagaku:Kk プラズマエッチング用平行平板電極
JP3050498U (ja) * 1998-01-12 1998-07-14 信越化学工業株式会社 プラズマ装置用電極板
WO1998046808A1 (fr) * 1997-04-11 1998-10-22 Tokyo Electron Limited Processeur
JPH1154296A (ja) * 1997-08-05 1999-02-26 Sony Corp プラズマ発生装置およびプラズマ装置
JP2001223204A (ja) * 2000-02-08 2001-08-17 Shin Etsu Chem Co Ltd プラズマエッチング装置用電極板
JP2003100646A (ja) * 2001-09-27 2003-04-04 Sekisui Chem Co Ltd 放電プラズマ処理装置
JP2005108482A (ja) * 2003-09-29 2005-04-21 E Square:Kk プラズマ表面処理装置
JP2005317958A (ja) * 2004-04-12 2005-11-10 Applied Materials Inc 大面積プラズマ増強化学気相堆積のためのガス拡散シャワーヘッド設計

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08227874A (ja) * 1995-02-21 1996-09-03 Mitsubishi Electric Corp 真空処理装置および真空処理方法
JPH0967685A (ja) * 1995-08-25 1997-03-11 Souzou Kagaku:Kk プラズマエッチング用平行平板電極
WO1998046808A1 (fr) * 1997-04-11 1998-10-22 Tokyo Electron Limited Processeur
JPH1154296A (ja) * 1997-08-05 1999-02-26 Sony Corp プラズマ発生装置およびプラズマ装置
JP3050498U (ja) * 1998-01-12 1998-07-14 信越化学工業株式会社 プラズマ装置用電極板
JP2001223204A (ja) * 2000-02-08 2001-08-17 Shin Etsu Chem Co Ltd プラズマエッチング装置用電極板
JP2003100646A (ja) * 2001-09-27 2003-04-04 Sekisui Chem Co Ltd 放電プラズマ処理装置
JP2005108482A (ja) * 2003-09-29 2005-04-21 E Square:Kk プラズマ表面処理装置
JP2005317958A (ja) * 2004-04-12 2005-11-10 Applied Materials Inc 大面積プラズマ増強化学気相堆積のためのガス拡散シャワーヘッド設計

Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9558918B2 (en) 2007-04-23 2017-01-31 Plasmology4, Inc. Cold plasma treatment devices and associated methods
EP2306792A3 (de) * 2009-09-24 2013-04-17 Fachhochschule Hildesheim / Holzminden / Göttingen Verfahren und Vorrichtung zum Behandeln von Objekten mit einem physikalischen Plasma bei Atmosphärendruck
JP2011154973A (ja) * 2010-01-28 2011-08-11 Mitsubishi Electric Corp プラズマ処理装置及びプラズマ処理方法
JP2012182026A (ja) * 2011-03-01 2012-09-20 Kazuo Shimizu プラズマ電極
WO2013040476A1 (en) 2011-09-15 2013-03-21 Cold Plasma Medical Technologies, Inc. Cold plasma treatment devices and associated methods
EP2756516A4 (en) * 2011-09-15 2015-03-04 Cold Plasma Medical Technologies Inc COLD PLASMA PROCESSING DEVICES AND RELATED METHODS
US10840065B2 (en) * 2016-12-05 2020-11-17 Toshiba Mitsubishi-Electric Industrial Systems Corporation Active gas generation apparatus including a metal housing, first and second auxiliary members, and a housing contact
WO2018104988A1 (ja) * 2016-12-05 2018-06-14 東芝三菱電機産業システム株式会社 活性ガス生成装置
JPWO2018104988A1 (ja) * 2016-12-05 2019-03-28 東芝三菱電機産業システム株式会社 活性ガス生成装置
CN110024088A (zh) * 2016-12-05 2019-07-16 东芝三菱电机产业系统株式会社 活性气体生成装置
CN110024088B (zh) * 2016-12-05 2023-02-21 东芝三菱电机产业系统株式会社 活性气体生成装置
TWI639724B (zh) * 2016-12-05 2018-11-01 東芝三菱電機產業系統股份有限公司 活性氣體生成裝置
EP3740045A4 (en) * 2018-01-10 2021-09-29 Toshiba Mitsubishi-Electric Industrial Systems Corporation ACTIVE GAS GENERATING DEVICE
JPWO2019138456A1 (ja) * 2018-01-10 2020-10-01 東芝三菱電機産業システム株式会社 活性ガス生成装置
KR20200096607A (ko) * 2018-01-10 2020-08-12 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 활성 가스 생성 장치
TWI675123B (zh) * 2018-01-10 2019-10-21 日商東芝三菱電機產業系統股份有限公司 活性氣體生成裝置及成膜處理裝置
KR102465845B1 (ko) 2018-01-10 2022-11-11 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 활성 가스 생성 장치
WO2019138456A1 (ja) * 2018-01-10 2019-07-18 東芝三菱電機産業システム株式会社 活性ガス生成装置
JP2020161332A (ja) * 2019-03-27 2020-10-01 株式会社ニデック プラズマ処理装置
JP7328500B2 (ja) 2019-03-27 2023-08-17 株式会社ニデック 大気圧プラズマ処理装置

Also Published As

Publication number Publication date
KR101087445B1 (ko) 2011-11-25
CN101658076A (zh) 2010-02-24
TW200904262A (en) 2009-01-16
JPWO2008123142A1 (ja) 2010-07-15
KR20090108738A (ko) 2009-10-16

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