WO2008114563A1 - 化学機械研磨用水系分散体および半導体装置の化学機械研磨方法 - Google Patents

化学機械研磨用水系分散体および半導体装置の化学機械研磨方法 Download PDF

Info

Publication number
WO2008114563A1
WO2008114563A1 PCT/JP2008/052802 JP2008052802W WO2008114563A1 WO 2008114563 A1 WO2008114563 A1 WO 2008114563A1 JP 2008052802 W JP2008052802 W JP 2008052802W WO 2008114563 A1 WO2008114563 A1 WO 2008114563A1
Authority
WO
WIPO (PCT)
Prior art keywords
mechanical polishing
chemical mechanical
aqueous dispersion
mass
semiconductor device
Prior art date
Application number
PCT/JP2008/052802
Other languages
English (en)
French (fr)
Inventor
Michiaki Andou
Tomohisa Konno
Original Assignee
Jsr Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corporation filed Critical Jsr Corporation
Priority to CN2008800005313A priority Critical patent/CN101542690B/zh
Priority to EP08711608A priority patent/EP2128893A4/en
Priority to US12/374,074 priority patent/US20090325383A1/en
Publication of WO2008114563A1 publication Critical patent/WO2008114563A1/ja

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

　本発明に係る化学機械研磨用水系分散体は、（Ａ）１０ｎｍ～１００ｎｍの平均粒子径を有するコロイダルシリカを０．１～４質量％と、（Ｂ）リン酸一アンモニウム、リン酸二アンモニウムおよび硫酸水素アンモニウムから選択される少なくとも１種を０．１～３質量％と、を含み、前記（Ａ）成分と前記（Ｂ）成分の質量比（Ａ）／（Ｂ）は１～３であり、かつｐＨは４～５であって、ポリシリコン膜、シリコン窒化膜およびシリコン酸化膜から選択される２種以上から形成される被研磨面を同時に研磨することができる。
PCT/JP2008/052802 2007-03-22 2008-02-20 化学機械研磨用水系分散体および半導体装置の化学機械研磨方法 WO2008114563A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN2008800005313A CN101542690B (zh) 2007-03-22 2008-02-20 化学机械研磨用水系分散体及半导体装置的化学机械研磨方法
EP08711608A EP2128893A4 (en) 2007-03-22 2008-02-20 AQUEOUS DISPERSION FOR CHEMICAL-MECHANICAL POLISHING AND METHOD FOR CHEMICAL-MECHANICAL POLISHING OF A SEMICONDUCTOR DEVICE
US12/374,074 US20090325383A1 (en) 2007-03-22 2008-02-20 Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method for semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007074537A JP4614981B2 (ja) 2007-03-22 2007-03-22 化学機械研磨用水系分散体および半導体装置の化学機械研磨方法
JP2007-074537 2007-03-22

Publications (1)

Publication Number Publication Date
WO2008114563A1 true WO2008114563A1 (ja) 2008-09-25

Family

ID=39765676

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/052802 WO2008114563A1 (ja) 2007-03-22 2008-02-20 化学機械研磨用水系分散体および半導体装置の化学機械研磨方法

Country Status (7)

Country Link
US (1) US20090325383A1 (ja)
EP (1) EP2128893A4 (ja)
JP (1) JP4614981B2 (ja)
KR (1) KR101473501B1 (ja)
CN (1) CN101542690B (ja)
TW (1) TWI435381B (ja)
WO (1) WO2008114563A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010047314A1 (ja) * 2008-10-20 2010-04-29 ニッタ・ハース株式会社 窒化ケイ素研磨用組成物およびこれを用いた選択比の制御方法
KR101551526B1 (ko) 2009-08-19 2015-09-08 이데미쓰 고산 가부시키가이샤 방향족 아민 유도체 및 그것을 이용한 유기 전기발광 소자

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5327427B2 (ja) * 2007-06-19 2013-10-30 Ｊｓｒ株式会社 化学機械研磨用水系分散体調製用セット、化学機械研磨用水系分散体の調製方法、化学機械研磨用水系分散体および化学機械研磨方法
US20100221918A1 (en) * 2007-09-03 2010-09-02 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and method for preparing the same, kit for preparing aqueous dispersion for chemical mechanical polishing, and chemical mechanical polishing method for semiconductor device
US8506359B2 (en) * 2008-02-06 2013-08-13 Jsr Corporation Aqueous dispersion for chemical mechanical polishing and chemical mechanical polishing method
CN101946309A (zh) * 2008-02-18 2011-01-12 Jsr株式会社 化学机械研磨用水系分散体以及化学机械研磨方法
KR101563023B1 (ko) * 2008-02-18 2015-10-23 제이에스알 가부시끼가이샤 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법
WO2009107472A1 (ja) * 2008-02-27 2009-09-03 Jsr株式会社 化学機械研磨用水系分散体およびそれを用いた化学機械研磨方法、化学機械研磨用水系分散体の再生方法
JP5472585B2 (ja) 2008-05-22 2014-04-16 Ｊｓｒ株式会社 化学機械研磨用水系分散体および化学機械研磨方法
US8480920B2 (en) * 2009-04-02 2013-07-09 Jsr Corporation Chemical mechanical polishing aqueous dispersion, method of preparing the same, chemical mechanical polishing aqueous dispersion preparation kit, and chemical mechanical polishing method
CN104845532B (zh) * 2009-06-22 2017-10-03 嘉柏微电子材料股份公司 化学机械抛光组合物以及用于抑制多晶硅移除速率的方法
US8497210B2 (en) * 2010-10-04 2013-07-30 International Business Machines Corporation Shallow trench isolation chemical mechanical planarization
US20130061876A1 (en) * 2011-09-14 2013-03-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor Device Surface Clean
CN103173127B (zh) * 2011-12-23 2016-11-23 安集微电子（上海）有限公司 一种用于硅通孔阻挡层平坦化的化学机械抛光液
US9303187B2 (en) * 2013-07-22 2016-04-05 Cabot Microelectronics Corporation Compositions and methods for CMP of silicon oxide, silicon nitride, and polysilicon materials
JP6160579B2 (ja) * 2014-08-05 2017-07-12 信越半導体株式会社 シリコンウェーハの仕上げ研磨方法
KR101628878B1 (ko) * 2015-09-25 2016-06-16 영창케미칼 주식회사 Cmp용 슬러리 조성물 및 이를 이용한 연마방법
KR102509260B1 (ko) * 2015-11-20 2023-03-14 삼성디스플레이 주식회사 실리콘 연마 슬러리, 다결정 실리콘의 연마방법 및 박막 트랜지스터 기판의 제조방법
CN110997856B (zh) * 2017-08-09 2021-10-29 昭和电工材料株式会社 研磨液和研磨方法
TWI792315B (zh) 2020-06-09 2023-02-11 日商Ｊｓｒ股份有限公司 化學機械研磨用組成物及研磨方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11176773A (ja) 1997-12-12 1999-07-02 Toshiba Corp 研磨方法
JP2001007061A (ja) 1999-06-18 2001-01-12 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP2001035820A (ja) 1999-07-21 2001-02-09 Hitachi Chem Co Ltd Ｃｍｐ研磨液
JP2002190458A (ja) 2000-12-21 2002-07-05 Jsr Corp 化学機械研磨用水系分散体
JP2002313760A (ja) * 2001-04-05 2002-10-25 Samsung Electronics Co Ltd 化学機械的研磨スラリー、化学機械的研磨方法及びこれを採用する浅いトレンチ素子分離方法
JP2004269577A (ja) 2003-03-05 2004-09-30 Kao Corp 研磨速度選択比向上剤

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW358983B (en) * 1997-11-15 1999-05-21 Taiwan Semiconductor Mfg Co Ltd Chemical mechanical grinding method
EP1036836B1 (en) * 1999-03-18 2004-11-03 Kabushiki Kaisha Toshiba Aqueous dispersion for chemical mechanical polishing
JP3813865B2 (ja) * 2001-12-11 2006-08-23 株式会社荏原製作所 研磨方法及び研磨装置
JP2003277734A (ja) * 2001-12-31 2003-10-02 Hynix Semiconductor Inc 金属用ｃｍｐスラリー及びこれを利用した半導体素子の金属配線コンタクトプラグ形成方法
JP4175540B2 (ja) * 2002-11-13 2008-11-05 花王株式会社 半導体基板製造工程用組成物
JP2004304016A (ja) * 2003-03-31 2004-10-28 Sharp Corp 半導体装置及びその製造方法
CN1540741A (zh) * 2003-04-24 2004-10-27 台湾积体电路制造股份有限公司 浅沟渠隔离的平坦化方法
DE602004007718T2 (de) * 2003-05-12 2008-04-30 Jsr Corp. Chemisch-mechanisches Poliermittel-Kit und chemisch-mechanisches Polierverfahren unter Verwendung desselben
JP4202201B2 (ja) * 2003-07-03 2008-12-24 株式会社フジミインコーポレーテッド 研磨用組成物
TWI291987B (en) * 2003-07-04 2008-01-01 Jsr Corp Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method
US20050092620A1 (en) * 2003-10-01 2005-05-05 Applied Materials, Inc. Methods and apparatus for polishing a substrate
US7514363B2 (en) * 2003-10-23 2009-04-07 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
JP2005183686A (ja) * 2003-12-19 2005-07-07 Renesas Technology Corp 半導体装置およびその製造方法
US6971945B2 (en) * 2004-02-23 2005-12-06 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Multi-step polishing solution for chemical mechanical planarization
US7560384B2 (en) * 2005-02-23 2009-07-14 Jsr Corporation Chemical mechanical polishing method
DE602006002900D1 (de) * 2005-03-09 2008-11-13 Jsr Corp Wässrige Dispersion zum chemisch-mechanischen Polieren, Kit zu deren Herstellung und chemisch-mechanisches Polierverfahren
US20060276041A1 (en) * 2005-05-17 2006-12-07 Jsr Corporation Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion
JP5327427B2 (ja) * 2007-06-19 2013-10-30 Ｊｓｒ株式会社 化学機械研磨用水系分散体調製用セット、化学機械研磨用水系分散体の調製方法、化学機械研磨用水系分散体および化学機械研磨方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11176773A (ja) 1997-12-12 1999-07-02 Toshiba Corp 研磨方法
JP2001007061A (ja) 1999-06-18 2001-01-12 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP2001035820A (ja) 1999-07-21 2001-02-09 Hitachi Chem Co Ltd Ｃｍｐ研磨液
JP2002190458A (ja) 2000-12-21 2002-07-05 Jsr Corp 化学機械研磨用水系分散体
JP2002313760A (ja) * 2001-04-05 2002-10-25 Samsung Electronics Co Ltd 化学機械的研磨スラリー、化学機械的研磨方法及びこれを採用する浅いトレンチ素子分離方法
JP2004269577A (ja) 2003-03-05 2004-09-30 Kao Corp 研磨速度選択比向上剤

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2128893A4

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010047314A1 (ja) * 2008-10-20 2010-04-29 ニッタ・ハース株式会社 窒化ケイ素研磨用組成物およびこれを用いた選択比の制御方法
JP2011181947A (ja) * 2008-10-20 2011-09-15 Nitta Haas Inc 窒化ケイ素研磨用組成物およびこれを用いた選択比の制御方法
KR101538826B1 (ko) * 2008-10-20 2015-07-22 니타 하스 인코포레이티드 질화 규소 연마용 조성물 및 이것을 이용한 선택비의 제어 방법
US10421884B2 (en) 2008-10-20 2019-09-24 Nitta Haas Incorporated Method of controlling selectivity using composition for polishing silicon nitride
KR101551526B1 (ko) 2009-08-19 2015-09-08 이데미쓰 고산 가부시키가이샤 방향족 아민 유도체 및 그것을 이용한 유기 전기발광 소자

Also Published As

Publication number Publication date
CN101542690B (zh) 2011-08-17
EP2128893A1 (en) 2009-12-02
TWI435381B (zh) 2014-04-21
JP4614981B2 (ja) 2011-01-19
KR101473501B1 (ko) 2014-12-16
US20090325383A1 (en) 2009-12-31
CN101542690A (zh) 2009-09-23
EP2128893A4 (en) 2011-05-18
TW200839864A (en) 2008-10-01
JP2008235652A (ja) 2008-10-02
KR20090122172A (ko) 2009-11-26

Similar Documents

Publication Publication Date Title
WO2008114563A1 (ja) 化学機械研磨用水系分散体および半導体装置の化学機械研磨方法
MY150866A (en) Compositions and methods for polishing silicon nitride materials
WO2010036358A8 (en) Abrasive compositions for chemical mechanical polishing and methods for using same
EP2017318A3 (en) Chemical mechanical polishing aqueous dispersion preparation set, method of preparing chemical mechanical polishing aqueous dispersion, chemical mechanical polishing aqueous dispersion, and chemical mechanical polishing method
MY148323A (en) Stable, high rate silicon slurry
TW200801168A (en) Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing method, kit for chemical mechanical polishing, and kit for preparing aqueous dispersion for chemical mechanical polishing
WO2010005543A3 (en) Method of polishing nickel-phosphorous
WO2008117592A1 (ja) 化学機械研磨用水系分散体、および半導体装置の化学機械研磨方法
EP1950263A3 (en) Polishing composition and polishing method
SG162693A1 (en) Silicon wafer and method of manufacturing the same
WO2008098640A3 (de) Verfahren zur herstellung höherer silane
WO2007108926A3 (en) Composition and method to polish silicon nitride
HK1139700A1 (en) Nanoparticle inks based on silicon/germanium, doped particles, printing and processes for semiconductor applications
JP2018513552A5 (ja)
TW200738856A (en) Polishing composition and polishing method
MY153666A (en) Cmp method for metal-containing substrates
TW201612292A (en) Polishing agent and fabricating method thereof, method for polishing substrate, and polishing agent set and fabricating method thereof
WO2013018016A3 (en) A PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING OF ELEMENTAL GERMANIUM AND/OR Si1-XGeX MATERIAL IN THE PRESENCE OF A CMP COMPOSITION HAVING A pH VALUE OF 3.0 TO 5.5
MY146015A (en) Silicon carbide polishing method utilizing water-soluble oxidizers
WO2009132125A3 (en) Braking devices and methods for use in drilling operations
TW200621965A (en) Polishing composition for a semiconductor substrate
WO2009065569A3 (en) Submicron anti-corrosive particles
WO2010025218A3 (en) Composite semiconductor substrates for thin-film device layer transfer
MY138857A (en) High selectivity colloidal silica slurry
TW200639271A (en) Method for manufacturing water-using home facility or equipment, and water-using home facility or equipment

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880000531.3

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08711608

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2008711608

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 1020097007704

Country of ref document: KR

WWE Wipo information: entry into national phase

Ref document number: 12374074

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE