WO2008108264A1 - 半導体装置およびその製造方法ならびに磁気メモリ素子 - Google Patents
半導体装置およびその製造方法ならびに磁気メモリ素子 Download PDFInfo
- Publication number
- WO2008108264A1 WO2008108264A1 PCT/JP2008/053496 JP2008053496W WO2008108264A1 WO 2008108264 A1 WO2008108264 A1 WO 2008108264A1 JP 2008053496 W JP2008053496 W JP 2008053496W WO 2008108264 A1 WO2008108264 A1 WO 2008108264A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- tmr
- mram
- magnetic memory
- semiconductor device
- manufacturing
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1659—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Abstract
半導体装置は、フリー層MFを含む磁気トンネル接合TMRを有し、TMRの近傍に流れる電流が発生する磁場によって、フリー層MFの磁化方向が制御される標準MRAMと、フリー層MFを含むTMRを有し、TMRに供給されるスピン注入電流により、フリー層MFの磁化方向が制御されるSTT-MRAMとを備え、標準MRAMおよびSTT-MRAMが同一基板上に搭載される。 こうした構成により、種類の異なる磁気メモリ素子の個々の特性を有効に活用でき、素子特性が多様な磁気メモリ素子を実現できる。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-052952 | 2007-03-02 | ||
JP2007052952A JP2008218649A (ja) | 2007-03-02 | 2007-03-02 | 半導体装置およびその製造方法ならびに磁気メモリ素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008108264A1 true WO2008108264A1 (ja) | 2008-09-12 |
Family
ID=39738147
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/053496 WO2008108264A1 (ja) | 2007-03-02 | 2008-02-28 | 半導体装置およびその製造方法ならびに磁気メモリ素子 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2008218649A (ja) |
TW (1) | TW200845442A (ja) |
WO (1) | WO2008108264A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010039458A1 (en) * | 2008-09-23 | 2010-04-08 | Qualcomm Incorporated | Low power electronic system using non-volatile magnetic memory |
CN102623483A (zh) * | 2011-01-27 | 2012-08-01 | 瑞萨电子株式会社 | 半导体器件 |
JP2014112691A (ja) * | 2013-12-26 | 2014-06-19 | Renesas Electronics Corp | 半導体装置の製造方法 |
TWI451411B (zh) * | 2008-09-30 | 2014-09-01 | Micron Technology Inc | 用於自旋力矩轉移磁性隨機存取記憶體或其他自旋電子應用之自旋電流產生器 |
US10446211B2 (en) | 2017-09-20 | 2019-10-15 | Toshiba Memory Corporation | Semiconductor storage device |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5488833B2 (ja) * | 2008-03-07 | 2014-05-14 | 日本電気株式会社 | Mram混載システム |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004023062A (ja) * | 2002-06-20 | 2004-01-22 | Nec Electronics Corp | 半導体装置とその製造方法 |
JP2005101123A (ja) * | 2003-09-24 | 2005-04-14 | Sony Corp | 磁気記憶装置、磁気記憶装置の書き込み方法および磁気記憶装置の製造方法 |
JP2005277147A (ja) * | 2004-03-25 | 2005-10-06 | Tohoku Univ | 磁気記録素子の記録方法及び磁気記録素子アレイ |
JP2006080287A (ja) * | 2004-09-09 | 2006-03-23 | Toshiba Corp | 磁気ランダムアクセスメモリ |
-
2007
- 2007-03-02 JP JP2007052952A patent/JP2008218649A/ja active Pending
-
2008
- 2008-02-28 WO PCT/JP2008/053496 patent/WO2008108264A1/ja active Application Filing
- 2008-02-29 TW TW097107012A patent/TW200845442A/zh unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004023062A (ja) * | 2002-06-20 | 2004-01-22 | Nec Electronics Corp | 半導体装置とその製造方法 |
JP2005101123A (ja) * | 2003-09-24 | 2005-04-14 | Sony Corp | 磁気記憶装置、磁気記憶装置の書き込み方法および磁気記憶装置の製造方法 |
JP2005277147A (ja) * | 2004-03-25 | 2005-10-06 | Tohoku Univ | 磁気記録素子の記録方法及び磁気記録素子アレイ |
JP2006080287A (ja) * | 2004-09-09 | 2006-03-23 | Toshiba Corp | 磁気ランダムアクセスメモリ |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010039458A1 (en) * | 2008-09-23 | 2010-04-08 | Qualcomm Incorporated | Low power electronic system using non-volatile magnetic memory |
US8719610B2 (en) | 2008-09-23 | 2014-05-06 | Qualcomm Incorporated | Low power electronic system architecture using non-volatile magnetic memory |
TWI451411B (zh) * | 2008-09-30 | 2014-09-01 | Micron Technology Inc | 用於自旋力矩轉移磁性隨機存取記憶體或其他自旋電子應用之自旋電流產生器 |
US8885398B2 (en) | 2008-09-30 | 2014-11-11 | Micron Technology, Inc. | Spin current generator for STT-MRAM or other spintronics applications |
CN102623483A (zh) * | 2011-01-27 | 2012-08-01 | 瑞萨电子株式会社 | 半导体器件 |
CN102623483B (zh) * | 2011-01-27 | 2016-06-01 | 瑞萨电子株式会社 | 半导体器件 |
JP2014112691A (ja) * | 2013-12-26 | 2014-06-19 | Renesas Electronics Corp | 半導体装置の製造方法 |
US10446211B2 (en) | 2017-09-20 | 2019-10-15 | Toshiba Memory Corporation | Semiconductor storage device |
Also Published As
Publication number | Publication date |
---|---|
TW200845442A (en) | 2008-11-16 |
JP2008218649A (ja) | 2008-09-18 |
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