WO2008108109A1 - 磁気メモリセル及び磁気ランダムアクセスメモリ - Google Patents

磁気メモリセル及び磁気ランダムアクセスメモリ Download PDF

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Publication number
WO2008108109A1
WO2008108109A1 PCT/JP2008/050535 JP2008050535W WO2008108109A1 WO 2008108109 A1 WO2008108109 A1 WO 2008108109A1 JP 2008050535 W JP2008050535 W JP 2008050535W WO 2008108109 A1 WO2008108109 A1 WO 2008108109A1
Authority
WO
WIPO (PCT)
Prior art keywords
recording layer
layer
end portion
electrode section
magnetic
Prior art date
Application number
PCT/JP2008/050535
Other languages
English (en)
French (fr)
Inventor
Kenichi Shimura
Hideaki Numata
Shunsuke Fukami
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009502474A priority Critical patent/JP5146846B2/ja
Publication of WO2008108109A1 publication Critical patent/WO2008108109A1/ja

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)

Abstract

　磁気メモリセルは、固定層４と記録層２と非磁性体層３と電極部２１と電極部２２とを具備する。固定層４は、磁化方向が固定された強磁性体を含む。記録層２は、固定層４の磁化方向と自身の磁化方向との相対的関係により情報を記憶する強磁性体を含む。非磁性体層３は、記録層２と固定層４との間に設けられている。電極部２１は、記録層２の一方の端部に電気的に接続されている。電極部２２は、記録層２の他方の端部に電気的に接続されている。書き込み電流が第１電極部２１及び電極部２２のいずれか一方から他方へ記録層２を介して供給されたとき、一方の端部及び他方の端部に、記録層２の磁化の方向に対して反平行の成分を含む端部磁化が生じ、記録層２の磁化は、端部磁化の方向へ向く。
PCT/JP2008/050535 2007-03-08 2008-01-17 磁気メモリセル及び磁気ランダムアクセスメモリ WO2008108109A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009502474A JP5146846B2 (ja) 2007-03-08 2008-01-17 磁気メモリセル及び磁気ランダムアクセスメモリ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007059253 2007-03-08
JP2007-059253 2007-03-08

Publications (1)

Publication Number Publication Date
WO2008108109A1 true WO2008108109A1 (ja) 2008-09-12

Family

ID=39738005

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050535 WO2008108109A1 (ja) 2007-03-08 2008-01-17 磁気メモリセル及び磁気ランダムアクセスメモリ

Country Status (2)

Country Link
JP (1) JP5146846B2 (ja)
WO (1) WO2008108109A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010153022A (ja) * 2008-12-24 2010-07-08 Samsung Electronics Co Ltd 情報保存装置及びその動作方法
JP2011096734A (ja) * 2009-10-27 2011-05-12 Sony Corp 情報記憶素子及びその駆動方法
JP2012039009A (ja) * 2010-08-10 2012-02-23 Renesas Electronics Corp 半導体装置、および、半導体装置の製造方法
US8987846B2 (en) 2013-03-22 2015-03-24 Yoshinori Kumura Magnetic memory and manufacturing method thereof
US9203015B2 (en) 2013-03-22 2015-12-01 Hisanori Aikawa Magnetic storage device
EP3605540A1 (en) * 2018-08-02 2020-02-05 TDK Corporation Magnetic domain wall displacement type magnetic recording element and magnetic recording array
JP2021057519A (ja) * 2019-10-01 2021-04-08 Tdk株式会社 磁壁移動素子及び磁気記録アレイ

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006270069A (ja) * 2005-02-23 2006-10-05 Hitachi Ltd パルス電流による磁壁移動に基づいた磁気抵抗効果素子および高速磁気記録装置
JP2006303159A (ja) * 2005-04-20 2006-11-02 Fuji Electric Holdings Co Ltd スピン注入磁区移動素子およびこれを用いた装置
JP2007227923A (ja) * 2006-02-23 2007-09-06 Samsung Electronics Co Ltd マグネチックドメインドラッギングを利用する磁性メモリ素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103663A (ja) * 2005-10-04 2007-04-19 Toshiba Corp 磁気素子、記録再生素子、論理演算素子および論理演算器
US8023315B2 (en) * 2007-02-13 2011-09-20 Nec Corporation Magnetoresistive effect element and magnetic random access memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006270069A (ja) * 2005-02-23 2006-10-05 Hitachi Ltd パルス電流による磁壁移動に基づいた磁気抵抗効果素子および高速磁気記録装置
JP2006303159A (ja) * 2005-04-20 2006-11-02 Fuji Electric Holdings Co Ltd スピン注入磁区移動素子およびこれを用いた装置
JP2007227923A (ja) * 2006-02-23 2007-09-06 Samsung Electronics Co Ltd マグネチックドメインドラッギングを利用する磁性メモリ素子

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010153022A (ja) * 2008-12-24 2010-07-08 Samsung Electronics Co Ltd 情報保存装置及びその動作方法
JP2011096734A (ja) * 2009-10-27 2011-05-12 Sony Corp 情報記憶素子及びその駆動方法
JP2012039009A (ja) * 2010-08-10 2012-02-23 Renesas Electronics Corp 半導体装置、および、半導体装置の製造方法
US8987846B2 (en) 2013-03-22 2015-03-24 Yoshinori Kumura Magnetic memory and manufacturing method thereof
US9203015B2 (en) 2013-03-22 2015-12-01 Hisanori Aikawa Magnetic storage device
US9312476B2 (en) 2013-03-22 2016-04-12 Kabushiki Kaisha Toshiba Magnetic memory
EP3605540A1 (en) * 2018-08-02 2020-02-05 TDK Corporation Magnetic domain wall displacement type magnetic recording element and magnetic recording array
CN110797059A (zh) * 2018-08-02 2020-02-14 Tdk株式会社 磁壁移动型磁记录元件及磁记录阵列
US11335849B2 (en) 2018-08-02 2022-05-17 Tdk Corporation Magnetic domain wall displacement type magnetic recording element and magnetic recording array
JP2021057519A (ja) * 2019-10-01 2021-04-08 Tdk株式会社 磁壁移動素子及び磁気記録アレイ
JP7419729B2 (ja) 2019-10-01 2024-01-23 Tdk株式会社 磁壁移動素子及び磁気記録アレイ

Also Published As

Publication number Publication date
JPWO2008108109A1 (ja) 2010-06-10
JP5146846B2 (ja) 2013-02-20

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