WO2008105094A1 - 固体撮像装置 - Google Patents

固体撮像装置 Download PDF

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Publication number
WO2008105094A1
WO2008105094A1 PCT/JP2007/053822 JP2007053822W WO2008105094A1 WO 2008105094 A1 WO2008105094 A1 WO 2008105094A1 JP 2007053822 W JP2007053822 W JP 2007053822W WO 2008105094 A1 WO2008105094 A1 WO 2008105094A1
Authority
WO
WIPO (PCT)
Prior art keywords
circuit
holding
integration
circuits
difference operation
Prior art date
Application number
PCT/JP2007/053822
Other languages
English (en)
French (fr)
Inventor
Seiichiro Mizuno
Haruhiro Funakoshi
Original Assignee
Hamamatsu Photonics K.K.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hamamatsu Photonics K.K. filed Critical Hamamatsu Photonics K.K.
Priority to KR1020097014566A priority Critical patent/KR101332536B1/ko
Priority to US12/528,692 priority patent/US8537258B2/en
Priority to PCT/JP2007/053822 priority patent/WO2008105094A1/ja
Priority to EP07737541.8A priority patent/EP2129107B1/en
Priority to CN2007800518343A priority patent/CN101632297B/zh
Publication of WO2008105094A1 publication Critical patent/WO2008105094A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

　固体撮像装置１は、Ｎ個の画素部１０１～１０Ｎ、トランスインピーダンス回路２０ａ，２０ｂ、積分回路３０ａ，３０ｂ、差分演算回路４０を備える。各画素部１０ｎは、フォトダイオードを有する光電変換回路，この光電変換回路の出力電圧を保持する第１保持回路および第２保持回路を含む。各画素部１０ｎの第１保持回路により保持された電圧は、共通配線５０ａ，トランスインピーダンス回路２０ａおよび積分回路３０ａを経て、差分演算回路４０に入力される。また、各画素部１０ｎの第２保持回路により保持された電圧は、共通配線５０ｂ，トランスインピーダンス回路２０ｂおよび積分回路３０ｂを経て、差分演算回路４０に入力される。積分回路３０ａ，３０ｂそれぞれから出力された電圧の差に応じた電圧が差分演算回路４０から出力される。
PCT/JP2007/053822 2007-02-28 2007-02-28 固体撮像装置 WO2008105094A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020097014566A KR101332536B1 (ko) 2007-02-28 2007-02-28 고체 촬상 장치
US12/528,692 US8537258B2 (en) 2007-02-28 2007-02-28 Solid-state imaging device with transimpedance and integrating circuits
PCT/JP2007/053822 WO2008105094A1 (ja) 2007-02-28 2007-02-28 固体撮像装置
EP07737541.8A EP2129107B1 (en) 2007-02-28 2007-02-28 Solid-state imaging apparatus
CN2007800518343A CN101632297B (zh) 2007-02-28 2007-02-28 固体摄像装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/053822 WO2008105094A1 (ja) 2007-02-28 2007-02-28 固体撮像装置

Publications (1)

Publication Number Publication Date
WO2008105094A1 true WO2008105094A1 (ja) 2008-09-04

Family

ID=39720938

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/053822 WO2008105094A1 (ja) 2007-02-28 2007-02-28 固体撮像装置

Country Status (5)

Country Link
US (1) US8537258B2 (ja)
EP (1) EP2129107B1 (ja)
KR (1) KR101332536B1 (ja)
CN (1) CN101632297B (ja)
WO (1) WO2008105094A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101873442A (zh) * 2009-04-24 2010-10-27 索尼公司 固态摄像器件、摄像装置以及驱动该固态摄像器件的方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN202565232U (zh) * 2012-05-30 2012-11-28 四川兴达明科机电工程有限公司 一种电荷放大器
JP2014027479A (ja) * 2012-07-26 2014-02-06 Seiko Instruments Inc 光電変換装置
WO2020252756A1 (zh) * 2019-06-20 2020-12-24 深圳市汇顶科技股份有限公司 像素电路、图像传感器和电子设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09233257A (ja) * 1996-02-21 1997-09-05 Alps Electric Co Ltd エリアイメージセンサ
JPH09511616A (ja) * 1994-03-31 1997-11-18 イメイション・コーポレイション 可変の電極配列および処理を用いるイメージングシステム
JPH10336526A (ja) * 1997-05-28 1998-12-18 Hamamatsu Photonics Kk 固体撮像装置
JP2001245212A (ja) * 2000-02-28 2001-09-07 Mitsubishi Electric Corp 光電変換装置
JP2002354195A (ja) * 2001-05-29 2002-12-06 Hamamatsu Photonics Kk 信号処理回路および固体撮像装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04248756A (ja) 1991-02-04 1992-09-04 Kanegafuchi Chem Ind Co Ltd 画像読取方法及びその装置
JPH0630186A (ja) 1992-07-10 1994-02-04 Fuji Xerox Co Ltd イメ−ジセンサの駆動方法及びイメ−ジセンサ
JP2683189B2 (ja) 1992-09-16 1997-11-26 浜松ホトニクス株式会社 画像処理装置
JP3313885B2 (ja) 1993-06-02 2002-08-12 キヤノン株式会社 信号処理装置
JPH08139851A (ja) 1994-11-09 1996-05-31 Matsushita Electric Ind Co Ltd イメージセンサ
US5793230A (en) * 1997-02-26 1998-08-11 Sandia Corporation Sensor readout detector circuit
JP2002528728A (ja) * 1998-10-28 2002-09-03 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ コンピュータトモグラフ検出器
JP4248756B2 (ja) 2001-03-29 2009-04-02 Ｔｄｋ株式会社 固体電解コンデンサ内蔵基板およびその製造方法
US7183531B2 (en) * 2004-03-31 2007-02-27 Micron Technology, Inc. Amplification with feedback capacitance for photodetector signals
TWI235546B (en) 2004-08-31 2005-07-01 Add Microtech Corp Improved transimpedance amplifier circuit
US20060187329A1 (en) * 2005-02-24 2006-08-24 Micron Technology, Inc. Clamped capacitor readout noise rejection circuit for imagers
JP4781985B2 (ja) * 2006-12-13 2011-09-28 浜松ホトニクス株式会社 固体撮像装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09511616A (ja) * 1994-03-31 1997-11-18 イメイション・コーポレイション 可変の電極配列および処理を用いるイメージングシステム
JPH09233257A (ja) * 1996-02-21 1997-09-05 Alps Electric Co Ltd エリアイメージセンサ
JPH10336526A (ja) * 1997-05-28 1998-12-18 Hamamatsu Photonics Kk 固体撮像装置
JP2001245212A (ja) * 2000-02-28 2001-09-07 Mitsubishi Electric Corp 光電変換装置
JP2002354195A (ja) * 2001-05-29 2002-12-06 Hamamatsu Photonics Kk 信号処理回路および固体撮像装置

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
HARA K. ET AL.: "A Linear-Logarithmic CMOS Sensor with Offset Calibration Using an Injected Charge Signal", ISSCC 2005. DIGEST OF TECHNICAL PAPERS, vol. 1, February 2005 (2005-02-01), pages 354 - 355, XP010830852 *
K. HARA ET AL.: "A Linear Logarithmic CMOS Sensor with Offset Calibration Using an Injected Charge Signal", ISSCC 2005 DIG. TECH. PAPERS, 2005, pages 354 - 355
See also references of EP2129107A4

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101873442A (zh) * 2009-04-24 2010-10-27 索尼公司 固态摄像器件、摄像装置以及驱动该固态摄像器件的方法

Also Published As

Publication number Publication date
CN101632297A (zh) 2010-01-20
EP2129107B1 (en) 2015-04-01
EP2129107A1 (en) 2009-12-02
KR101332536B1 (ko) 2013-11-22
EP2129107A4 (en) 2013-12-11
KR20100014313A (ko) 2010-02-10
CN101632297B (zh) 2012-01-18
US20100085459A1 (en) 2010-04-08
US8537258B2 (en) 2013-09-17

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