TWI235546B - Improved transimpedance amplifier circuit - Google Patents

Improved transimpedance amplifier circuit Download PDF

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TWI235546B
TWI235546B TW93126244A TW93126244A TWI235546B TW I235546 B TWI235546 B TW I235546B TW 93126244 A TW93126244 A TW 93126244A TW 93126244 A TW93126244 A TW 93126244A TW I235546 B TWI235546 B TW I235546B
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circuit
amplifier
bipolar transistor
oxide
transimpedance amplifier
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TW93126244A
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Chinese (zh)
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TW200608700A (en
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Yih-Wey Tang
Yong-Qiang Xue
Jiang Bian
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Add Microtech Corp
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Abstract

The present invention relates to an improved transimpedance amplifier circuit, comprising a bipolar transistor differential amplifier having an input end connected to a photo diode and another input end connected to a reference voltage, and a feedback circuit , which is a resistor-and-capacitor-parallel-connected circuit, comprising a capacitor and a resistor connected to each other in parallel, which are serially connected to a complementary metal-oxide-semiconductor field effect transistor. The resistor-and-capacitor-parallel-connected circuit has one end connected to the input end of the bipolar transistor differential amplifier and another end connected to an output of the bipolar transistor differential amplifier. By such an arrangement it combines bipolar transistor and complementary metal-oxide-semiconductor field effect transistor to realize the purpose of high response, low noise and low power consumption.

Description

1235546 九、· _説_ :議 【發明所屬之技術領域】 本發明係有關於一種轉阻放大器改良電路,尤其是關於一種能達到高 速反應、低雜訊及低功率目的之轉阻放大器改良電路。 【先前技術】 光和電子在今日已成為通訊及資料儲存媒介。在通訊方面,頻寬遠優 於電纜之光纖普及,在資料儲存方面,近場光碟(容量可到l〇〇G)也已問世。 然而,不論是以光或電子作為通訊及儲存之媒介,到最後仍需轉換為 電壓作進一步的資料處理或呈現,一般是以光二極體積體電路(ph〇t〇1235546 Nine, · _ said _: Discussion [Technical field to which the invention belongs] The present invention relates to an improved circuit for a transimpedance amplifier, and in particular, to an improved circuit for a transimpedance amplifier capable of achieving high-speed response, low noise, and low power. . [Previous Technology] Optoelectronics has become a communication and data storage medium today. In terms of communication, the use of optical fibers with far better bandwidth than cables, and in the field of data storage, near-field optical discs (capacity up to 100G) have also been introduced. However, regardless of whether light or electronics are used as communication and storage media, they still need to be converted to voltage for further data processing or presentation. Generally, they are based on photodiode volume circuit (ph〇t〇).

Diode Integrated Circuit,簡稱PDIC)來達成。PDIC除了將雷射光轉成 電壓之外,還要產生RF、鎖執誤差(Tracking error)、聚焦誤差(Focus error) 的訊號,再將訊號送給下一級前置放大器處理,以便解回訊號與完成鎖執、 聚焦。因此,PDIC雖然是一個小小的電路,卻扮演著非常關鍵的角色。pdic 包含兩個部份,一為光二極體感測器(Photodiode sensor),將反射回來的 雷射光源轉換成電流(電子流),另外一部份為積體電路(lntegrated Circuit),此電路的功用為將電流轉換成電壓訊號,並且提供增益,以便 供給下一級的前置放大器使用。這是因為由轉阻放大器而來的電壓訊號振 幅不大,所以常需要再接一個前置放大器來將電壓訊號放大。 積體電路部分即為轉阻放大器(Transimpedance Ampifier,簡稱TIA), 其作用是將電流訊號轉換成電壓訊號,作法有許多種,可視製程與規格而 設計。 轉阻放大器電路的架構可以是開迴路或閉迴路方式。若使用開迴路之 1235546 結構設計轉阻放大器,由電阻所產生雜訊直接連至輸出,且電廢越低,雜 訊越嚴重,因而不實用,因此轉阻放大器均以閉迴路之迴授架構來實現。 又因為所輸入訊號是電流,轉阻放大器必須具低輸入阻抗,所以目前實現 轉阻放大器的結構中最普遍且廣為使用的是由基極輸入之共射極電路與回 授結構,輸入訊號與參考電壓差動輸入,再經一級電壓放大,最後即是緩 衝級的輸出;也有少數是使用射極輸入之共基極電路與回授結構。轉阻放 大器利用並並回授(Shunt-shunt feedback)架構來提供轉阻增益,可提供 高增益、高頻寬、低雜訊特性。 如圖一所示,圖一係為轉阻放大器之電路結構示意圖。轉阻放大器系 由放大器Amp(增益為_A),回授電阻Rfb,及參考電壓Vref所組成。轉阻 放大器能將光二極體PD產生之光電流lpd轉換成電壓v〇ut輸出。由於光 二極體之空乏區具有電容效應(即所謂的寄生電容),因此一般會以一電容 Cfb與回授電阻Rfb並聯作為補償,以避免不穩定的電壓增益,如圖二所示, 其中,電容Cfb會設一開M swu乍控制。亦可再設一開關SW2來控制回授 電阻Rfb之導通’如圖三所示。 如圖四所示,為了同時得到高增益及較佳的頻寬響應,一般轉阻放大 器會採用二級放大電路結構,第二個放大器Amp2之增益是-A2,回授電阻 是Rfb2,以電容Cfb2作為補償,控制回授電阻Rfb2之開關邠4,以及控 制電容Wb2之開關SW3,參考電壓是yref2。 轉阻放大器之實施電路可分為兩種,一種是使用雙載子電晶體 (Bipolar TransislOr)來達成,如圖五所示。轉阻放大器電路結構示意圖 1235546 中之開關SW2由雙載子電晶體φΐ來達成,而放大器Amp是由二雙载子電晶 體Q1,Q2,及電流源電路II,12,13來達成。另,為了穩定輪出,可於放 大器輸出端連接一緩衝放大器(Buffer)B。而另一種是使用互補式金氧半場 效電晶體(Complementary metal-oxide-semiconductor field effect transistor,簡稱CMOS)來達成,如圖六所示。轉阻放大器電路結構示意圖 中之開關SW2由互補式金氧半場效電晶體φ2來達成,而放大器Amp是由二 互補式金氧半場效電晶體Q3,Q4,及電流源電路II,12,13來達成。另, 為了穩定輸出,可於放大器輸出端連接一緩衝放大器(Buffer)B。 前述兩種電路架構類似,僅達成的元件不同。雙載子電晶體與 金氧半場效電晶體大量應用於開關,訊號放大器,功率放大器,電流鏡等 電子及通訊領域。其中,M0SFET是最被廣泛使用於各場合的電晶體種類, 特別是在電腦及通訊相關的電子設備中,這是由於M0SFET的結構特別適 合被縮小化,而且功率需求也小,在同一晶片上製作上千萬個電晶體開關 變得可行。 兩種電晶體相比較,金氧半場效電晶體比較無法契合GHz等級輸入訊 號的特性要求,而雙載子電晶體卻毫無問題,因此基帶訊號處理電路上大 都使用金氧半場效電晶體,而在RF/IF的訊號處理方面則以雙載子電晶體 方式居多,而在耗電量方面,金氧半場效電晶體遠比雙載子電晶體小,因 此無論使用哪一種,均存在有不完善的缺點。 1235546 【發明内容】 有鐘於傳統轉阻放大器電路仍存在有不完善之處,發明人經多年不斷 的研究開發’終於研發出此種能改良習知轉阻放A||的缺點,缝達到高 速反應、低雜訊及低功帛目的之轉阻放大器改良電路。 本發明轉阻放大器改良電路係以雙載子電晶體⑻即㈣結合先進 的互補式金氧半場效電晶體技術(⑽s),形成雙載子互補金氧半導體 (BiCMOS)。以互補式金氧半場效電晶體作為開關取得較佳之開關電路特性 及低功率損耗’而以魏子電晶體作為差滅大如取得高速及較佳之頻 寬響應。也就是將電路中需要高速與高電流驅動的部份以雙載子電晶 體來製作,需要高集積度與低耗㈣部份就以互補式金氧半場效電晶 體來製作,以達到提供更高速、雜訊更低以及較低功率特性。 本發明轉阻放大器改良電路,具有町之優點: 1具有雙載子電晶體雜訊低之優點 2·以互補式金氧半場效電晶體作為開關具有較佳之開關電路特性 3.避免互補式金氧半場效電晶體之接面電容與光二極體之接面電 容不匹配而在高輯產生高雜訊 為了_查員能更容易了解本發明之特點,請參閱以下附圖及本發 明之實施方式說明。 1235546 【實施方式】 請參閱圖七’圖七所示係爲本發日聯阻放大器改良電路圖。本發明轉 阻放大器改良電路,其係包含有—差動雙載子電晶體放大ϋ及-回授電 路。其中’雙載子電晶體Q5,Q6以共射極方式連接,該差動雙載子電晶體 放大器之-輸人端與光二極體pD相連接*另—輸人端與參考賴㈣相 連接,而雜電路係為-與互補式金氧半場效電晶額關㈣相串聯之電容 Cfbl和-與互補式金氧半場效電晶體開關㈣相串聯之電阻Rfbi並聯組 成相授電路端接至差動雙載子電晶體放大器之輸入端,一端接至差 動雙載子電晶體放大器之輸出端VQUt。輸出端在輸出電壓㈣作為下一級 電路之輸入刖可再連接一緩衝放大器β。 该差動雙載子電晶體放大器具有三個電流源^ 12,13,電流源的實 施電路有許多種,例如可以於雙載子電晶體之基極加偏壓,而於射極串聯 一電阻來達成。 藉由如此之設計,結合雙載子電晶體與式金氧半場效電晶體兩種 結構,以達到高速反應、低雜訊更及低功率目的。 為了同時得到高增益及較佳的頻寬響應,—般轉阻放大器會採用二級 放大電路結構’如圖八獅。第二減大電鱗_前述驗,其中,雙 載子電晶體Q7,Q8以共射極方式連接,該差動雙載子電晶體放大器之一輸 入端與前述前—級之輸出端相連接,而另一輪人端與參考電壓Vref2相連 接;回授電路則由一與互補式金氧半場效電晶體開關㈣串聯之電容⑽ 和-與互補式金氧半場效電晶體開_6相串聯之電阻_並聯組成,該 1235546 回授電路一端接至差動螫盤曰 又戟子電日日體放大器之輸入端,一端接至差動雙載 子電曰曰體放大⑤之輸出端。輸出端在作為下—級電路之輸人前可再連接一 緩衝放大器B,而電流源分別為u,12,13。 值得一提的是,本發轉阻放大ϋ改良電路也可以改為射極輸入之共 基極電路結構。 X上所述僅疋藉由較佳實施例詳細說明本發明,然而對於該實施例所 作的任何修改與變化,如回授電路之型式,電流源電路之實施方式等,皆 不脫離本發明之精神與範圍。 由以上詳細說明可使熟知本項技藝者明瞭本發嘱確可達成前述之目 的,實已符合專利法之規定,爰依法提出發明專利申請。 【圖式簡單說明】 圖一係為轉阻放大器之電路結構示意圖 圖一係為具補償電容及其控制開關之轉阻放大器之電路結構示意圖 圖三係為回授電阻具控制開關之轉阻放大器之電路結構示意圖 圖四係為採用二級放大電路結構之轉阻放大器之電路結構示意圖 圖五係為習知以雙載子電晶體電路來達成之轉阻放大器之電路結構圖 圖八係為習知以金氧半場效電晶體電路來達成之轉阻放大器之電路結構 圖 圖七係為本發明轉阻放大器改良電路之電路結構圖 圖八係為本發明轉阻放大器改良電路採用二級放大電路結構之電路結構 1235546 【主要元件符號說明】 B緩衝放大器Diode Integrated Circuit (PDIC for short). In addition to converting the laser light into a voltage, the PDIC also generates signals such as RF, tracking error, and focus error, and then sends the signal to the next-stage preamplifier for processing in order to return the signal and Complete the lock and focus. Therefore, although PDIC is a small circuit, it plays a very important role. The pdic contains two parts, one is a photodiode sensor, which converts the reflected laser light source into a current (electron flow), and the other is an integrated circuit. This circuit The function is to convert the current into a voltage signal and provide gain for use by the preamp of the next stage. This is because the voltage signal from the transimpedance amplifier does not have large amplitude, so it is often necessary to connect another preamp to amplify the voltage signal. The integrated circuit part is a transimpedance amplifier (Transimpedance Ampifier, referred to as TIA). Its function is to convert the current signal into a voltage signal. There are many ways to design it, depending on the process and specifications. The architecture of the transimpedance amplifier circuit can be open-loop or closed-loop. If an open-loop 1235546 structure is used to design a transimpedance amplifier, the noise generated by the resistor is directly connected to the output, and the lower the electrical waste, the more serious the noise, so it is not practical. Therefore, the transimpedance amplifiers use a closed-loop feedback structure. to realise. Because the input signal is a current, the transimpedance amplifier must have a low input impedance, so the most common and widely used structure of the transimpedance amplifier is the common emitter circuit and feedback structure from the base input. Differential input from the reference voltage, and then amplified by the first-stage voltage, and finally the output of the buffer stage; a few are common base circuit and feedback structure using the emitter input. The transimpedance amplifier uses a shunt-shunt feedback architecture to provide transimpedance gain, which can provide high gain, high frequency bandwidth, and low noise characteristics. As shown in Figure 1, Figure 1 is a schematic diagram of the circuit structure of a transimpedance amplifier. The transimpedance amplifier is composed of an amplifier Amp (gain is _A), a feedback resistance Rfb, and a reference voltage Vref. The transimpedance amplifier can convert the photocurrent lpd generated by the photodiode PD into a voltage vout. Because the empty area of the photodiode has a capacitive effect (so-called parasitic capacitance), a capacitor Cfb is generally used in parallel with the feedback resistor Rfb as compensation to avoid unstable voltage gain, as shown in Figure 2, where: Capacitor Cfb will set an on-off control. A switch SW2 can also be set to control the conduction of the feedback resistor Rfb 'as shown in FIG. As shown in Figure 4, in order to obtain high gain and better bandwidth response at the same time, the general transimpedance amplifier will use a two-stage amplifier circuit structure. The gain of the second amplifier Amp2 is -A2, and the feedback resistance is Rfb2. Cfb2 is used as compensation to control switch 邠 4 of feedback resistor Rfb2 and switch SW3 of control capacitor Wb2. The reference voltage is yref2. The implementation circuit of the transimpedance amplifier can be divided into two types. One is achieved by using a bipolar transistor (Bipolar TransislOr), as shown in Figure 5. Schematic diagram of the circuit of the transimpedance amplifier The switch SW2 in 1235546 is achieved by the bipolar transistor φΐ, and the amplifier Amp is achieved by the two bipolar transistors Q1, Q2, and the current source circuits II, 12, 13. In addition, in order to stabilize the rotation, a buffer amplifier (Buffer) B can be connected to the amplifier output. The other is achieved by using a complementary metal-oxide-semiconductor field effect transistor (CMOS for short), as shown in Figure 6. The switch SW2 in the schematic diagram of the transimpedance amplifier circuit is achieved by a complementary metal-oxide-semiconductor half-field-effect transistor φ2, and the amplifier Amp is composed of two complementary metal-oxide-semiconductor half-field-effect transistors Q3, Q4, and a current source circuit II, 12, 13 To reach. In addition, in order to stabilize the output, a buffer amplifier (Buffer) B may be connected to the output end of the amplifier. The aforementioned two circuit architectures are similar, with only different components being achieved. Bipolar transistors and metal-oxide-semiconductor half-effect transistors are widely used in electronic and communication fields such as switches, signal amplifiers, power amplifiers, and current mirrors. Among them, M0SFET is the most widely used transistor type in various occasions, especially in computer and communication-related electronic equipment. This is because the structure of M0SFET is particularly suitable for being reduced, and the power demand is also small. On the same chip It becomes feasible to make tens of millions of transistor switches. Compared with the two transistors, the metal-oxide-semiconductor half-effect transistor is less able to meet the characteristics requirements of the GHz-level input signal, but the double-carrier transistor has no problems. Therefore, most of the baseband signal processing circuits use metal-oxide semi-effect transistor. In terms of RF / IF signal processing, bipolar transistors are mostly used. In terms of power consumption, metal-oxide-semiconductor half-effect transistors are much smaller than bipolar transistors. Therefore, no matter which one is used, there are Imperfections. 1235546 [Content of the invention] There are still some imperfections in the traditional transimpedance amplifier circuit. After years of continuous research and development, the inventor finally developed this kind of shortcomings that can improve the conventional transimpedance amplifier A || Improved circuit for high-speed response, low noise and low power transimpedance amplifiers. The improved transimpedance amplifier circuit of the present invention uses a double-carrier transistor (i.e., ㈣) combined with advanced complementary metal-oxide-semiconductor field-effect transistor technology (⑽s) to form a double-carrier complementary metal-oxide semiconductor (BiCMOS). The use of complementary metal-oxide-semiconductor half-field-effect transistors as switches achieves better switching circuit characteristics and low power loss', and the use of Weizi transistors as differential switches achieves high-speed and better bandwidth response. That is, the parts in the circuit that need high-speed and high-current drive are made of bipolar transistors. The parts that require high integration and low power consumption are made of complementary metal-oxide-semiconductor half-field effect transistors to provide more High speed, lower noise, and lower power characteristics. The improved circuit of the transimpedance amplifier of the present invention has the advantages of: 1. It has the advantage of low noise in the bipolar transistor 2. It has better switching circuit characteristics by using a complementary metal-oxide-semiconductor field-effect transistor as a switch 3. Avoiding complementary gold The interface capacitance of the oxygen half field effect transistor does not match the interface capacitance of the photodiode and high noise is generated in the high series. In order to check the characteristics of the present invention more easily, please refer to the following drawings and the implementation of the present invention. Ways to explain. 1235546 [Embodiment] Please refer to Figure VII. Figure VII shows an improved circuit diagram of the Japanese resistance amplifier. The improved transimpedance amplifier circuit of the present invention comprises a differential double-carrier transistor amplifier and a feedback circuit. Among them, the bipolar transistor Q5 and Q6 are connected in a common emitter manner. The -input terminal of the differential bipolar transistor amplifier is connected to the photodiode pD. * The other input terminal is connected to the reference diode. The hybrid circuit is a capacitor Cfbl connected in series with the complementary metal-oxide-semiconductor half-field-effect transistor and-a resistor Rfbi connected in series with the complementary metal-oxide-semiconductor half-field-effect transistor switch in parallel to form a phase-feed circuit that is The input terminal of the differential bipolar transistor amplifier, one end is connected to the output terminal VQUt of the differential bipolar transistor amplifier. The output terminal can be connected to a buffer amplifier β at the output voltage as the input of the next stage circuit. The differential bipolar transistor amplifier has three current sources ^ 12,13. There are many kinds of current source implementation circuits. For example, the base of the bipolar transistor can be biased, and a resistor can be connected in series with the emitter. To reach. With such a design, a combination of a two-carrier transistor and a metal-oxide-semiconductor half-field effect transistor is used to achieve high-speed response, low noise, and low power. In order to obtain high gain and better bandwidth response at the same time, the general transimpedance amplifier will use a two-stage amplifier circuit structure, as shown in Figure Eight Lion. The second reduction of the electric scale is as described above, in which the bipolar transistors Q7 and Q8 are connected in a common emitter manner, and one input terminal of the differential bipolar transistor amplifier is connected to the aforementioned front-stage output terminal. While the other end is connected to the reference voltage Vref2; the feedback circuit consists of a capacitor ㈣ connected in series with the complementary metal-oxide-semiconductor half-effect transistor ㈣ and-connected in series with the complementary metal-oxide-semiconductor half-effect transistor ON_6 It consists of resistors in parallel. One end of the 1235546 feedback circuit is connected to the input terminal of a differential amplifier and a solar amplifier, and one end is connected to the output of a differential amplifier. The output end can be connected to a buffer amplifier B before the input of the lower-level circuit, and the current sources are u, 12, 13 respectively. It is worth mentioning that the improved transimpedance amplifier ϋ improved circuit can also be changed to the common base circuit structure of the emitter input. The above X only describes the present invention in detail through a preferred embodiment, but any modifications and changes made to this embodiment, such as the type of the feedback circuit, the implementation of the current source circuit, etc., do not depart from the present invention. Spirit and scope. From the above detailed description, those skilled in the art can understand that this issuance can indeed achieve the aforesaid objectives, and that they have indeed complied with the provisions of the Patent Law and filed an application for an invention patent in accordance with the law. [Schematic description] Figure 1 is a schematic diagram of the circuit structure of a transimpedance amplifier. Figure 1 is a schematic diagram of a circuit structure of a transimpedance amplifier with a compensation capacitor and a control switch. Figure 3 is a transimpedance amplifier with a feedback resistor and a control switch. Schematic diagram of the circuit structure. Figure 4 is a schematic diagram of the circuit structure of a transimpedance amplifier using a two-stage amplifier circuit structure. Figure 5 is a circuit structure diagram of a transimpedance amplifier that is known to be achieved by a bipolar transistor circuit. Figure 7 shows the circuit structure of a transimpedance amplifier based on metal-oxide half-field effect transistor circuits. Figure 7 shows the circuit structure of the improved transimpedance amplifier circuit of the present invention. Figure 8 shows the improved circuit of the transimpedance amplifier of the present invention. Circuit Structure of Amplifying Circuit Structure 1235546 [Description of Symbols of Main Components] B Buffer Amplifier

Ipd光電流 PD光二極體Ipd photocurrent PD photodiode

Vout輸出電壓Vout output voltage

Vref,Vref2參考電壓 Q1,Q2,Q5,Q6,Q7,Q8雙載子電晶體Vref, Vref2 reference voltages Q1, Q2, Q5, Q6, Q7, Q8 bipolar transistor

Amp,Amp1,Amp2 放大器Amp, Amp1, Amp2 amplifier

Rfb,Rfb1,Rfb2 回授電阻Rfb, Rfb1, Rfb2 feedback resistance

Cfb,Cfb1,Cfb2 補償電容 SW1,SW2,SW3,SW4 開關 丨1,12,丨3,丨4,丨5,丨6電流源 Q3,Q4互補式金氧半場效電晶體 Φ1,Φ2,Φ3,Φ4,Φ5,Φ6 電晶體開關Cfb, Cfb1, Cfb2 Compensation capacitors SW1, SW2, SW3, SW4 switches 丨 1, 12, 丨 3, 丨 4, 丨 5, 丨 6 current source Q3, Q4 complementary metal-oxide-semiconductor field-effect transistors Φ1, Φ2, Φ3, Φ4, Φ5, Φ6 transistor switch

Claims (1)

1235546 十、_讀_利範圍: 1 · 一種轉阻放大器改良電路,其係包含有: -差動雙載子電晶體放大器,該放大H之-輪人端與光二極體相連接❿, 另一輸入端與參考電壓相連接,以及 -回授電路’該回授電路係為-與互補式金氧半場效電晶體開關相串聯 之電容和一與互補式金氧半場效電晶體開關相串聯之電阻並聯組 成,該回授電路一端接至差動雙載子電晶體放大器之輸入端,一端接 至差動雙載子電晶體放大器之輸出端; _ 藉由如此之設計,結合雙載子電晶體與互補式金氧半場效電晶體 兩種結構,以達到高速反應、低雜訊及低功率目的。 2 ·如申請專利範圍第1項所述之轉阻放大器改良電路,其中,回授電路之 電容可依實際需要調整其電容值或移除不用。 3·如申請專利範圍第1項所述之轉阻放大器改良電路,其中,差動雙載子 電晶體放大器之輸出端可連接一緩衝放大器。 121235546 10. Read Range: 1 · An improved circuit for a transimpedance amplifier, which includes:-a differential bipolar transistor amplifier, which amplifies H-the human end is connected to a photodiode, and An input terminal is connected to the reference voltage, and the feedback circuit is a capacitor connected in series with the complementary metal-oxide-semiconductor half-effect transistor and a capacitor connected in series with the complementary metal-oxide-semiconductor half-effect transistor. The resistance is composed of resistors connected in parallel. One end of the feedback circuit is connected to the input terminal of the differential bipolar transistor amplifier, and one end is connected to the output terminal of the differential bipolar transistor amplifier. Transistors and complementary metal-oxide-semiconductor half-field effect transistors have two structures to achieve high-speed response, low noise, and low power. 2 · The improved circuit of the transimpedance amplifier as described in item 1 of the scope of patent application, wherein the capacitance of the feedback circuit can be adjusted or removed according to actual needs. 3. The improved circuit of the transimpedance amplifier according to item 1 of the scope of the patent application, wherein a buffer amplifier can be connected to the output of the differential bipolar transistor amplifier. 12
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