WO2008105077A1 - 化合物半導体装置とその製造方法 - Google Patents

化合物半導体装置とその製造方法 Download PDF

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Publication number
WO2008105077A1
WO2008105077A1 PCT/JP2007/053689 JP2007053689W WO2008105077A1 WO 2008105077 A1 WO2008105077 A1 WO 2008105077A1 JP 2007053689 W JP2007053689 W JP 2007053689W WO 2008105077 A1 WO2008105077 A1 WO 2008105077A1
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WO
WIPO (PCT)
Prior art keywords
compound semiconductor
opening
active layer
semiconductor device
electrode disposed
Prior art date
Application number
PCT/JP2007/053689
Other languages
English (en)
French (fr)
Inventor
Toshihide Kikkawa
Original Assignee
Fujitsu Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Limited filed Critical Fujitsu Limited
Priority to EP07715024.1A priority Critical patent/EP2117040B1/en
Priority to JP2009501080A priority patent/JP5099116B2/ja
Priority to PCT/JP2007/053689 priority patent/WO2008105077A1/ja
Publication of WO2008105077A1 publication Critical patent/WO2008105077A1/ja
Priority to US12/548,622 priority patent/US8183572B2/en
Priority to US13/454,349 priority patent/US8603871B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7788—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

　ピンチオフ特性の優れた縦型ＧａＮ系電界効果トランジスタを提供する。 　化合物半導体装置は、導電性半導体基板と、導電性基板裏面上に形成されたドレイン電極と、導電性半導体基板表面上に、高抵抗化合物半導体または絶縁体で形成され、開口を有する電流ブロック層と、開口を埋め、電流ブロック層上面上に延在する化合物半導体の活性層と、開口上方で、活性層上方に形成されたゲート電極と、ゲート電極側方で、活性層上方に形成されたソース電極と、を有する。
PCT/JP2007/053689 2007-02-27 2007-02-27 化合物半導体装置とその製造方法 WO2008105077A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
EP07715024.1A EP2117040B1 (en) 2007-02-27 2007-02-27 Compound semiconductor device and process for producing the same
JP2009501080A JP5099116B2 (ja) 2007-02-27 2007-02-27 化合物半導体装置とその製造方法
PCT/JP2007/053689 WO2008105077A1 (ja) 2007-02-27 2007-02-27 化合物半導体装置とその製造方法
US12/548,622 US8183572B2 (en) 2007-02-27 2009-08-27 Compound semiconductor device and its manufacture method
US13/454,349 US8603871B2 (en) 2007-02-27 2012-04-24 Compound semiconductor device and its manufacture method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/053689 WO2008105077A1 (ja) 2007-02-27 2007-02-27 化合物半導体装置とその製造方法

Related Child Applications (1)

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US12/548,622 Continuation US8183572B2 (en) 2007-02-27 2009-08-27 Compound semiconductor device and its manufacture method

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WO2008105077A1 true WO2008105077A1 (ja) 2008-09-04

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US (2) US8183572B2 (ja)
EP (1) EP2117040B1 (ja)
JP (1) JP5099116B2 (ja)
WO (1) WO2008105077A1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010225938A (ja) * 2009-03-24 2010-10-07 Fujitsu Ltd 化合物半導体装置及びその製造方法
JP2011146441A (ja) * 2010-01-12 2011-07-28 Toyota Central R&D Labs Inc 半導体装置とその製造方法
JP2011210781A (ja) * 2010-03-29 2011-10-20 Oki Electric Industry Co Ltd 縦型ＡｌＧａＮ／ＧａＮ−ＨＥＭＴおよびその製造方法
DE102010061295B4 (de) * 2009-12-17 2017-11-23 Infineon Technologies Austria Ag Halbleitervorrichtung mit metallischem Träger
WO2022181100A1 (ja) * 2021-02-24 2022-09-01 パナソニックホールディングス株式会社 窒化物半導体装置

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JP5530682B2 (ja) * 2009-09-03 2014-06-25 パナソニック株式会社 窒化物半導体装置
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KR20130014850A (ko) * 2011-08-01 2013-02-12 삼성전자주식회사 파워소자의 제조방법
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KR101805634B1 (ko) * 2011-11-15 2017-12-08 삼성전자 주식회사 Ⅲ-ⅴ족 배리어를 포함하는 반도체 소자 및 그 제조방법
KR101922107B1 (ko) * 2012-06-22 2019-02-13 삼성전자주식회사 반도체소자 및 그 제조방법
US9070685B2 (en) * 2012-08-24 2015-06-30 Win Semiconductors Corp. Compound semiconductor integrated circuit
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US9343569B2 (en) 2014-05-21 2016-05-17 International Business Machines Corporation Vertical compound semiconductor field effect transistor on a group IV semiconductor substrate
US9893174B2 (en) * 2014-05-21 2018-02-13 Arizona Board Of Regents On Behalf Of Arizona State University III-nitride based N polar vertical tunnel transistor
CN104992971B (zh) * 2015-06-29 2020-01-24 电子科技大学 具有复合低k电流阻挡层的垂直氮化镓基异质结场效应管
CN105428412A (zh) * 2015-12-22 2016-03-23 工业和信息化部电子第五研究所 AlGaN/GaN异质结场效应晶体管及其制备方法
CN108630677B (zh) * 2017-03-17 2022-03-08 智瑞佳（苏州）半导体科技有限公司 一种功率器件版图结构及制作方法
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US10608102B2 (en) * 2017-09-29 2020-03-31 Electronics And Telecommunications Research Institute Semiconductor device having a drain electrode contacting an epi material inside a through-hole and method of manufacturing the same
US10784341B2 (en) 2019-01-21 2020-09-22 Northrop Grumnian Systems Corporation Castellated superjunction transistors
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WO2020216250A1 (zh) * 2019-04-26 2020-10-29 苏州晶湛半导体有限公司 一种增强型器件及其制备方法
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KR20210061198A (ko) * 2019-11-19 2021-05-27 삼성전자주식회사 반도체 구조체, 이를 포함하는 트랜지스터 및 트랜지스터의 제조방법
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010225938A (ja) * 2009-03-24 2010-10-07 Fujitsu Ltd 化合物半導体装置及びその製造方法
DE102010061295B4 (de) * 2009-12-17 2017-11-23 Infineon Technologies Austria Ag Halbleitervorrichtung mit metallischem Träger
JP2011146441A (ja) * 2010-01-12 2011-07-28 Toyota Central R&D Labs Inc 半導体装置とその製造方法
JP2011210781A (ja) * 2010-03-29 2011-10-20 Oki Electric Industry Co Ltd 縦型ＡｌＧａＮ／ＧａＮ−ＨＥＭＴおよびその製造方法
WO2022181100A1 (ja) * 2021-02-24 2022-09-01 パナソニックホールディングス株式会社 窒化物半導体装置

Also Published As

Publication number Publication date
US20120208331A1 (en) 2012-08-16
EP2117040A1 (en) 2009-11-11
JP5099116B2 (ja) 2012-12-12
US8603871B2 (en) 2013-12-10
US8183572B2 (en) 2012-05-22
EP2117040A4 (en) 2012-07-18
EP2117040B1 (en) 2018-05-16
US20090315037A1 (en) 2009-12-24
JPWO2008105077A1 (ja) 2010-06-03

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