WO2008102583A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
WO2008102583A1
WO2008102583A1 PCT/JP2008/050611 JP2008050611W WO2008102583A1 WO 2008102583 A1 WO2008102583 A1 WO 2008102583A1 JP 2008050611 W JP2008050611 W JP 2008050611W WO 2008102583 A1 WO2008102583 A1 WO 2008102583A1
Authority
WO
WIPO (PCT)
Prior art keywords
resistance value
circuit section
semiconductor device
nonvolatile variable
potential
Prior art date
Application number
PCT/JP2008/050611
Other languages
English (en)
French (fr)
Inventor
Tadahiko Sugibayashi
Noboru Sakimura
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009500107A priority Critical patent/JP5246155B2/ja
Priority to US12/528,144 priority patent/US8299830B2/en
Publication of WO2008102583A1 publication Critical patent/WO2008102583A1/ja
Priority to US13/300,825 priority patent/US20120063199A1/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5614—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using conductive bridging RAM [CBRAM] or programming metallization cells [PMC]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C27/00—Electric analogue stores, e.g. for storing instantaneous values
    • G11C27/005—Electric analogue stores, e.g. for storing instantaneous values with non-volatile charge storage, e.g. on floating gate or MNOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/08—Details of the phase-locked loop
    • H03L7/085—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal
    • H03L7/093—Details of the phase-locked loop concerning mainly the frequency- or phase-detection arrangement including the filtering or amplification of its output signal using special filtering or amplification characteristics in the loop
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
    • H03L7/00—Automatic control of frequency or phase; Synchronisation
    • H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
    • H03L7/08—Details of the phase-locked loop
    • H03L7/10—Details of the phase-locked loop for assuring initial synchronisation or for broadening the capture range
    • H03L7/101—Details of the phase-locked loop for assuring initial synchronisation or for broadening the capture range using an additional control signal to the controlled loop oscillator derived from a signal generated in the loop
    • H03L7/102—Details of the phase-locked loop for assuring initial synchronisation or for broadening the capture range using an additional control signal to the controlled loop oscillator derived from a signal generated in the loop the additional signal being directly applied to the controlled loop oscillator

Abstract

　不揮発性可変抵抗素子を搭載した半導体装置であって、不揮発性可変抵抗素子の抵抗値を電位または電流に変換して出力する抵抗値変換回路部と、抵抗値変換回路部からの出力と半導体装置内の一部の節点の電位または電流とを比較する比較回路部と、比較回路部における比較結果に基づいて不揮発性可変抵抗素子の抵抗値を変化させる抵抗値変更回路部とを有する。
PCT/JP2008/050611 2007-02-23 2008-01-18 半導体装置 WO2008102583A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009500107A JP5246155B2 (ja) 2007-02-23 2008-01-18 半導体装置
US12/528,144 US8299830B2 (en) 2007-02-23 2008-01-18 Semiconductor device
US13/300,825 US20120063199A1 (en) 2007-02-23 2011-11-21 Semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007043560 2007-02-23
JP2007-043560 2007-02-23

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/528,144 A-371-Of-International US8299830B2 (en) 2007-02-23 2008-01-18 Semiconductor device
US13/300,825 Division US20120063199A1 (en) 2007-02-23 2011-11-21 Semiconductor device

Publications (1)

Publication Number Publication Date
WO2008102583A1 true WO2008102583A1 (ja) 2008-08-28

Family

ID=39709862

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/050611 WO2008102583A1 (ja) 2007-02-23 2008-01-18 半導体装置

Country Status (3)

Country Link
US (2) US8299830B2 (ja)
JP (2) JP5246155B2 (ja)
WO (1) WO2008102583A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8446191B2 (en) 2009-12-07 2013-05-21 Qualcomm Incorporated Phase locked loop with digital compensation for analog integration
US8339165B2 (en) 2009-12-07 2012-12-25 Qualcomm Incorporated Configurable digital-analog phase locked loop

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02105906A (ja) * 1988-10-14 1990-04-18 Mitsubishi Electric Corp 基準電圧発生回路
JP2002026260A (ja) * 2000-07-04 2002-01-25 Mitsubishi Electric Corp 半導体装置
JP2002222929A (ja) * 2001-01-29 2002-08-09 Seiko Epson Corp 電圧安定化回路
JP2003032107A (ja) * 2001-07-19 2003-01-31 Nec Saitama Ltd 位相同期回路
WO2003094227A1 (en) * 2002-04-30 2003-11-13 Japan Science And Technology Agency Solid electrolyte switching device, fpga using same, memory device, and method for manufacturing solid electrolyte switching device
JP2005012220A (ja) * 2003-06-16 2005-01-13 Hewlett-Packard Development Co Lp 調整可能な相変化材料抵抗器
WO2005008783A1 (ja) * 2003-07-18 2005-01-27 Nec Corporation スイッチング素子、スイッチング素子の駆動方法、書き換え可能な論理集積回路およびメモリ素子
JP2007042838A (ja) * 2005-08-03 2007-02-15 Nec Electronics Corp 電源電位制御回路、半導体集積回路装置、及び電源電位の調整方法

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US4007122A (en) 1974-04-29 1977-02-08 Gould Inc. Solid electrolytes for use in solid state electrochemical devices
JPS5857897B2 (ja) 1975-11-08 1983-12-22 松下電器産業株式会社 コタイデンカイコンデンサ
JPS5456701A (en) 1977-10-14 1979-05-08 Sanyo Electric Co Ltd Preset receiving device
JPH0628841A (ja) 1992-07-08 1994-02-04 Makoto Yano 化学反応を利用した記憶素子
US5761115A (en) 1996-05-30 1998-06-02 Axon Technologies Corporation Programmable metallization cell structure and method of making same
JP2919378B2 (ja) 1996-08-29 1999-07-12 日本電気アイシーマイコンシステム株式会社 Ｐｌｌ回路
US6430032B2 (en) 2000-07-06 2002-08-06 Showa Denko K. K. Solid electrolytic capacitor and method for producing the same
JP2004146783A (ja) 2002-08-28 2004-05-20 Fujitsu Ltd 半導体集積回路装置、および半導体集積回路装置の調整方法
JP3773476B2 (ja) * 2002-09-09 2006-05-10 沖電気工業株式会社 半導体メモリおよびその書き込み方法、読み出し方法
AU2003252737A1 (en) 2003-07-30 2005-02-15 Nec Corporation Parallel flat plate line-type element and circuit substrate
JP4356542B2 (ja) 2003-08-27 2009-11-04 日本電気株式会社 半導体装置
US7148742B2 (en) * 2004-07-07 2006-12-12 Micron Technology, Inc. Power supply voltage detection circuitry and methods for use of the same
JP2006134398A (ja) * 2004-11-04 2006-05-25 Sony Corp 記憶装置及び半導体装置
DE102004056911B4 (de) * 2004-11-25 2010-06-02 Qimonda Ag Speicherschaltung sowie Verfahren zum Auslesen eines Speicherdatums aus einer solchen Speicherschaltung
JP2006319028A (ja) 2005-05-11 2006-11-24 Nec Corp スイッチング素子、書き換え可能な論理集積回路、およびメモリ素子
US7411381B2 (en) 2006-06-02 2008-08-12 Broadcom Corporation Circuit calibration using a time constant
US8237492B2 (en) * 2006-12-06 2012-08-07 Broadcom Corporation Method and system for a process sensor to compensate SOC parameters in the presence of IC process manufacturing variations

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02105906A (ja) * 1988-10-14 1990-04-18 Mitsubishi Electric Corp 基準電圧発生回路
JP2002026260A (ja) * 2000-07-04 2002-01-25 Mitsubishi Electric Corp 半導体装置
JP2002222929A (ja) * 2001-01-29 2002-08-09 Seiko Epson Corp 電圧安定化回路
JP2003032107A (ja) * 2001-07-19 2003-01-31 Nec Saitama Ltd 位相同期回路
WO2003094227A1 (en) * 2002-04-30 2003-11-13 Japan Science And Technology Agency Solid electrolyte switching device, fpga using same, memory device, and method for manufacturing solid electrolyte switching device
JP2005012220A (ja) * 2003-06-16 2005-01-13 Hewlett-Packard Development Co Lp 調整可能な相変化材料抵抗器
WO2005008783A1 (ja) * 2003-07-18 2005-01-27 Nec Corporation スイッチング素子、スイッチング素子の駆動方法、書き換え可能な論理集積回路およびメモリ素子
JP2007042838A (ja) * 2005-08-03 2007-02-15 Nec Electronics Corp 電源電位制御回路、半導体集積回路装置、及び電源電位の調整方法

Also Published As

Publication number Publication date
US8299830B2 (en) 2012-10-30
JP2013168939A (ja) 2013-08-29
JP5541378B2 (ja) 2014-07-09
JPWO2008102583A1 (ja) 2010-05-27
US20100097108A1 (en) 2010-04-22
JP5246155B2 (ja) 2013-07-24
US20120063199A1 (en) 2012-03-15

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