WO2008099449A1 - 断熱構造体、加熱装置、加熱システム、基板処理装置および半導体装置の製造方法 - Google Patents

断熱構造体、加熱装置、加熱システム、基板処理装置および半導体装置の製造方法 Download PDF

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Publication number
WO2008099449A1
WO2008099449A1 PCT/JP2007/052335 JP2007052335W WO2008099449A1 WO 2008099449 A1 WO2008099449 A1 WO 2008099449A1 JP 2007052335 W JP2007052335 W JP 2007052335W WO 2008099449 A1 WO2008099449 A1 WO 2008099449A1
Authority
WO
WIPO (PCT)
Prior art keywords
side wall
heat insulating
insulating structure
cooling gas
heater
Prior art date
Application number
PCT/JP2007/052335
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Ken Kojima
Shinobu Sugiura
Original Assignee
Hitachi Kokusai Electric Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Kokusai Electric Inc. filed Critical Hitachi Kokusai Electric Inc.
Priority to KR1020087001047A priority Critical patent/KR100932965B1/ko
Priority to JP2007553401A priority patent/JP5089401B2/ja
Priority to PCT/JP2007/052335 priority patent/WO2008099449A1/ja
Priority to CN2007800007193A priority patent/CN101395705B/zh
Priority to TW096105963A priority patent/TWI328831B/zh
Publication of WO2008099449A1 publication Critical patent/WO2008099449A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
PCT/JP2007/052335 2007-02-09 2007-02-09 断熱構造体、加熱装置、加熱システム、基板処理装置および半導体装置の製造方法 WO2008099449A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020087001047A KR100932965B1 (ko) 2007-02-09 2007-02-09 단열 구조체, 가열 장치, 가열 시스템, 기판 처리 장치 및반도체 장치의 제조 방법
JP2007553401A JP5089401B2 (ja) 2007-02-09 2007-02-09 断熱構造体、加熱装置、加熱システム、基板処理装置および半導体装置の製造方法
PCT/JP2007/052335 WO2008099449A1 (ja) 2007-02-09 2007-02-09 断熱構造体、加熱装置、加熱システム、基板処理装置および半導体装置の製造方法
CN2007800007193A CN101395705B (zh) 2007-02-09 2007-02-09 隔热构造体、加热装置、基板处理设备以及半导体器件的制造方法
TW096105963A TWI328831B (en) 2007-02-09 2007-02-16 Heat insulation structure, heating device, heating system, substrate processing apparatus, and manufacturing method for a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/052335 WO2008099449A1 (ja) 2007-02-09 2007-02-09 断熱構造体、加熱装置、加熱システム、基板処理装置および半導体装置の製造方法

Publications (1)

Publication Number Publication Date
WO2008099449A1 true WO2008099449A1 (ja) 2008-08-21

Family

ID=39689710

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/052335 WO2008099449A1 (ja) 2007-02-09 2007-02-09 断熱構造体、加熱装置、加熱システム、基板処理装置および半導体装置の製造方法

Country Status (5)

Country Link
JP (1) JP5089401B2 (zh)
KR (1) KR100932965B1 (zh)
CN (1) CN101395705B (zh)
TW (1) TWI328831B (zh)
WO (1) WO2008099449A1 (zh)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056287A (ja) * 2008-08-28 2010-03-11 Tokyo Ohka Kogyo Co Ltd 熱処理装置
WO2011098295A1 (de) * 2010-02-15 2011-08-18 Leybold Optics Gmbh Vorrichtung zur thermischen behandlung von substraten
JP2012009484A (ja) * 2010-06-22 2012-01-12 Hitachi Kokusai Electric Inc 加熱装置
JP2012033871A (ja) * 2010-07-09 2012-02-16 Hitachi Kokusai Electric Inc 基板処理装置、半導体装置の製造方法及び加熱装置
JP2012080080A (ja) * 2010-09-07 2012-04-19 Tokyo Electron Ltd 縦型熱処理装置及びその制御方法
JP2014209569A (ja) * 2013-03-25 2014-11-06 株式会社日立国際電気 断熱構造体及び半導体装置の製造方法
WO2015141792A1 (ja) * 2014-03-20 2015-09-24 株式会社日立国際電気 基板処理装置、天井部及び半導体装置の製造方法
WO2018105113A1 (ja) * 2016-12-09 2018-06-14 株式会社日立国際電気 基板処理装置、クーリングユニット及び断熱構造体
US11043402B2 (en) 2017-09-12 2021-06-22 Kokusai Electric Corporation Cooling unit, heat insulating structure, and substrate processing apparatus
CN115540341A (zh) * 2022-03-12 2022-12-30 无锡恒业电热电器有限公司 高温高压空气蓄能电加热器
CN117116814A (zh) * 2023-10-23 2023-11-24 芯恺半导体设备(徐州)有限责任公司 基板处理设备

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5504793B2 (ja) * 2009-09-26 2014-05-28 東京エレクトロン株式会社 熱処理装置及び冷却方法
KR101375742B1 (ko) * 2012-12-18 2014-03-19 주식회사 유진테크 기판처리장치
CN106756879A (zh) * 2015-11-23 2017-05-31 中国科学院沈阳科学仪器股份有限公司 一种半导体严苛工艺环境下的真空干泵氮气加热装置
JP6735686B2 (ja) * 2017-01-20 2020-08-05 東京エレクトロン株式会社 基板処理装置及び基板の冷却方法
JP6752851B2 (ja) * 2017-09-12 2020-09-09 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ クーリングユニット、基板処理装置、および半導体装置の製造方法
JP7023147B2 (ja) * 2018-03-13 2022-02-21 東京エレクトロン株式会社 断熱構造体及び縦型熱処理装置
CN110736345B (zh) * 2018-07-18 2021-01-29 北京北方华创微电子装备有限公司 用于SiC高温氧化工艺的工艺腔室及热处理炉
JP7055075B2 (ja) * 2018-07-20 2022-04-15 東京エレクトロン株式会社 熱処理装置及び熱処理方法
JP7262194B2 (ja) * 2018-09-18 2023-04-21 東京エレクトロン株式会社 載置台及び基板処理装置
CN111128785A (zh) * 2018-10-30 2020-05-08 北京北方华创微电子装备有限公司 一种热处理装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04369215A (ja) * 1991-06-17 1992-12-22 Riken Corp 縦型電気炉
JP2005183823A (ja) * 2003-12-22 2005-07-07 Hitachi Kokusai Electric Inc 基板処理装置
JP2005286051A (ja) * 2004-03-29 2005-10-13 Hitachi Kokusai Electric Inc 基板処理装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE8801785U1 (zh) * 1988-02-11 1988-11-10 Soehlbrand, Heinrich, Dr. Dipl.-Chem., 8027 Neuried, De
JP3184000B2 (ja) * 1993-05-10 2001-07-09 株式会社東芝 薄膜の形成方法およびその装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04369215A (ja) * 1991-06-17 1992-12-22 Riken Corp 縦型電気炉
JP2005183823A (ja) * 2003-12-22 2005-07-07 Hitachi Kokusai Electric Inc 基板処理装置
JP2005286051A (ja) * 2004-03-29 2005-10-13 Hitachi Kokusai Electric Inc 基板処理装置

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010056287A (ja) * 2008-08-28 2010-03-11 Tokyo Ohka Kogyo Co Ltd 熱処理装置
WO2011098295A1 (de) * 2010-02-15 2011-08-18 Leybold Optics Gmbh Vorrichtung zur thermischen behandlung von substraten
JP2012009484A (ja) * 2010-06-22 2012-01-12 Hitachi Kokusai Electric Inc 加熱装置
JP2012033871A (ja) * 2010-07-09 2012-02-16 Hitachi Kokusai Electric Inc 基板処理装置、半導体装置の製造方法及び加熱装置
JP2012080080A (ja) * 2010-09-07 2012-04-19 Tokyo Electron Ltd 縦型熱処理装置及びその制御方法
US9587884B2 (en) 2013-03-25 2017-03-07 Hitachi Kokusai Electric Inc. Insulation structure and method of manufacturing semiconductor device
JP2014209569A (ja) * 2013-03-25 2014-11-06 株式会社日立国際電気 断熱構造体及び半導体装置の製造方法
JPWO2015141792A1 (ja) * 2014-03-20 2017-04-13 株式会社日立国際電気 基板処理装置、天井部及び半導体装置の製造方法
WO2015141792A1 (ja) * 2014-03-20 2015-09-24 株式会社日立国際電気 基板処理装置、天井部及び半導体装置の製造方法
US10415136B2 (en) 2014-03-20 2019-09-17 Kokusai Electric Corporation Substrate processing apparatus including heating and cooling device, and ceiling part included in the same
WO2018105113A1 (ja) * 2016-12-09 2018-06-14 株式会社日立国際電気 基板処理装置、クーリングユニット及び断熱構造体
JPWO2018105113A1 (ja) * 2016-12-09 2019-10-24 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置、クーリングユニット及び断熱構造体
US11043402B2 (en) 2017-09-12 2021-06-22 Kokusai Electric Corporation Cooling unit, heat insulating structure, and substrate processing apparatus
CN115540341A (zh) * 2022-03-12 2022-12-30 无锡恒业电热电器有限公司 高温高压空气蓄能电加热器
CN115540341B (zh) * 2022-03-12 2023-09-08 无锡恒业电热电器有限公司 高温高压空气蓄能电加热器
CN117116814A (zh) * 2023-10-23 2023-11-24 芯恺半导体设备(徐州)有限责任公司 基板处理设备
CN117116814B (zh) * 2023-10-23 2024-04-05 芯恺半导体设备(徐州)有限责任公司 基板处理设备

Also Published As

Publication number Publication date
KR20080091423A (ko) 2008-10-13
JPWO2008099449A1 (ja) 2010-05-27
JP5089401B2 (ja) 2012-12-05
TWI328831B (en) 2010-08-11
CN101395705A (zh) 2009-03-25
KR100932965B1 (ko) 2009-12-21
TW200834650A (en) 2008-08-16
CN101395705B (zh) 2011-08-10

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