WO2008093834A1 - 固体撮像装置およびその製造方法 - Google Patents

固体撮像装置およびその製造方法 Download PDF

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Publication number
WO2008093834A1
WO2008093834A1 PCT/JP2008/051649 JP2008051649W WO2008093834A1 WO 2008093834 A1 WO2008093834 A1 WO 2008093834A1 JP 2008051649 W JP2008051649 W JP 2008051649W WO 2008093834 A1 WO2008093834 A1 WO 2008093834A1
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WIPO (PCT)
Prior art keywords
electrode layer
solid
state imaging
imaging device
thin film
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Application number
PCT/JP2008/051649
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English (en)
French (fr)
Other versions
WO2008093834A9 (ja
Inventor
Osamu Matsushima
Masaki Takaoka
Kenichi Miyazaki
Shogo Ishizuka
Keiichiro Sakurai
Shigeru Niki
Original Assignee
Rohm Co., Ltd.
National Institute Of Advanced Industrial Science And Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Rohm Co., Ltd., National Institute Of Advanced Industrial Science And Technology filed Critical Rohm Co., Ltd.
Priority to EP08704358.4A priority Critical patent/EP2124256A4/en
Priority to US12/525,357 priority patent/US8299510B2/en
Priority to JP2008556195A priority patent/JPWO2008093834A1/ja
Publication of WO2008093834A1 publication Critical patent/WO2008093834A1/ja
Publication of WO2008093834A9 publication Critical patent/WO2008093834A9/ja
Priority to US13/645,334 priority patent/US9202962B2/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14665—Imagers using a photoconductor layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

　可視光から近赤外光までの広い波長域に渡って高い感度を有し、暗電流が低減され、かつ構造が簡単な固体撮像装置およびその製造方法を提供する。 　基板上に形成された回路部３０と、回路部３０上に配置された下部電極層２５と、下部電極層２５上に配置され,光吸収層として機能するカルコパイライト構造の化合物半導体薄膜２４と、化合物半導体薄膜２４上に配置された透光性電極層２６とを備える光電変換部２８とを備え、下部電極層２５、化合物半導体薄膜２４、および透光性電極層２６は、回路部３０上に順次積層された固体撮像装置およびその製造方法。
PCT/JP2008/051649 2007-02-02 2008-02-01 固体撮像装置およびその製造方法 WO2008093834A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP08704358.4A EP2124256A4 (en) 2007-02-02 2008-02-01 Solid state imaging device and method of production therefor
US12/525,357 US8299510B2 (en) 2007-02-02 2008-02-01 Solid state imaging device and fabrication method for the same
JP2008556195A JPWO2008093834A1 (ja) 2007-02-02 2008-02-01 固体撮像装置およびその製造方法
US13/645,334 US9202962B2 (en) 2007-02-02 2012-10-04 Solid state imaging device and fabrication method for the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007024611 2007-02-02
JP2007-024611 2007-02-02

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US12/525,357 A-371-Of-International US8299510B2 (en) 2007-02-02 2008-02-01 Solid state imaging device and fabrication method for the same
US13/645,334 Division US9202962B2 (en) 2007-02-02 2012-10-04 Solid state imaging device and fabrication method for the same

Publications (2)

Publication Number Publication Date
WO2008093834A1 true WO2008093834A1 (ja) 2008-08-07
WO2008093834A9 WO2008093834A9 (ja) 2009-10-15

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US (2) US8299510B2 (ja)
EP (1) EP2124256A4 (ja)
JP (1) JPWO2008093834A1 (ja)
WO (1) WO2008093834A1 (ja)

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WO2010116974A1 (ja) * 2009-04-07 2010-10-14 ローム株式会社 光電変換装置および撮像装置
JP2011003878A (ja) * 2009-05-19 2011-01-06 Rohm Co Ltd フォトダイオードおよびその製造方法
CN101969078A (zh) * 2010-08-06 2011-02-09 白金 一种选择性汇聚的光学器件
US20110181765A1 (en) * 2010-01-22 2011-07-28 Rohm Co., Ltd. Imaging device
KR20110138159A (ko) * 2010-06-18 2011-12-26 소니 주식회사 고체 촬상 장치 및 전자 기기
EP2490264A1 (en) 2011-02-16 2012-08-22 Seiko Epson Corporation Photoelectric conversion device and electronic apparatus
JP2013051235A (ja) * 2011-08-30 2013-03-14 Seiko Epson Corp 光電変換装置および電子機器
WO2013111637A1 (ja) * 2012-01-23 2013-08-01 ソニー株式会社 固体撮像装置、及び、固体撮像装置の製造方法、電子機器
US8629916B2 (en) 2008-08-19 2014-01-14 Rohm Co., Ltd. Camera with imaging unit and imaging unit for camera
US9269735B2 (en) 2010-12-08 2016-02-23 Sony Corporation Method of manufacturing solid-state imaging device, solid-state imaging device, and electronic apparatus
US9391103B2 (en) 2013-08-15 2016-07-12 Sony Corporation Image pickup element and image pickup device
JP2016134576A (ja) * 2015-01-22 2016-07-25 日本放送協会 固体撮像素子およびその製造方法
JP2016134577A (ja) * 2015-01-22 2016-07-25 日本放送協会 固体撮像素子の製造方法
WO2017081847A1 (ja) * 2015-11-12 2017-05-18 パナソニックＩｐマネジメント株式会社 光検出装置
WO2017122537A1 (ja) * 2016-01-13 2017-07-20 ソニー株式会社 受光素子、受光素子の製造方法、撮像素子および電子機器
JP2017126738A (ja) * 2016-01-13 2017-07-20 ソニー株式会社 受光素子、受光素子の製造方法、撮像素子および電子機器
JPWO2018194030A1 (ja) * 2017-04-19 2020-05-14 ソニーセミコンダクタソリューションズ株式会社 半導体素子およびその製造方法、並びに電子機器

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WO2011027745A1 (ja) * 2009-09-01 2011-03-10 ローム株式会社 光電変換装置および光電変換装置の製造方法
JP5509962B2 (ja) * 2010-03-19 2014-06-04 ソニー株式会社 固体撮像装置、および、その製造方法、電子機器
US20130316490A1 (en) * 2010-12-28 2013-11-28 Universite Du Luxembourg Solar cell and solar cell production method
JP5682327B2 (ja) 2011-01-25 2015-03-11 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、及び電子機器
TWI467751B (zh) * 2011-12-12 2015-01-01 Sony Corp A solid-state imaging device, a driving method of a solid-state imaging device, and an electronic device
US9612345B2 (en) * 2012-10-23 2017-04-04 Cosolidated Nuclear Security, LLC Visible scintillation photodetector device incorporating chalcopyrite semiconductor crystals
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JP2017059855A (ja) * 2009-04-07 2017-03-23 ローム株式会社 光電変換装置
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WO2010116974A1 (ja) * 2009-04-07 2010-10-14 ローム株式会社 光電変換装置および撮像装置
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JP5547717B2 (ja) * 2009-04-07 2014-07-16 ローム株式会社 光電変換装置および撮像装置
JP2011003878A (ja) * 2009-05-19 2011-01-06 Rohm Co Ltd フォトダイオードおよびその製造方法
US20110181765A1 (en) * 2010-01-22 2011-07-28 Rohm Co., Ltd. Imaging device
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JP7211935B2 (ja) 2017-04-19 2023-01-24 ソニーセミコンダクタソリューションズ株式会社 半導体素子およびその製造方法、並びに電子機器

Also Published As

Publication number Publication date
US9202962B2 (en) 2015-12-01
EP2124256A4 (en) 2014-06-25
JPWO2008093834A1 (ja) 2010-05-20
WO2008093834A9 (ja) 2009-10-15
US8299510B2 (en) 2012-10-30
EP2124256A1 (en) 2009-11-25
US20130095594A1 (en) 2013-04-18
US20100102368A1 (en) 2010-04-29

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