WO2008093809A1 - 鋳造品の製造方法及び鋳造品 - Google Patents

鋳造品の製造方法及び鋳造品 Download PDF

Info

Publication number
WO2008093809A1
WO2008093809A1 PCT/JP2008/051584 JP2008051584W WO2008093809A1 WO 2008093809 A1 WO2008093809 A1 WO 2008093809A1 JP 2008051584 W JP2008051584 W JP 2008051584W WO 2008093809 A1 WO2008093809 A1 WO 2008093809A1
Authority
WO
WIPO (PCT)
Prior art keywords
cast
molten metal
sintered bodies
metal
cavity
Prior art date
Application number
PCT/JP2008/051584
Other languages
English (en)
French (fr)
Inventor
Yoshihiro Tanaka
Takahiro Ishikawa
Yumihiko Kuno
Shuhei Ishikawa
Original Assignee
Ngk Insulators, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ngk Insulators, Ltd. filed Critical Ngk Insulators, Ltd.
Publication of WO2008093809A1 publication Critical patent/WO2008093809A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Manufacture Of Alloys Or Alloy Compounds (AREA)
  • Molds, Cores, And Manufacturing Methods Thereof (AREA)

Abstract

　多孔質焼結体１６ａ，２２ａを金型のキャビティに配置する際に、多孔質焼結体１６ａ，２２ａの周囲に空間が生じるように、鋳造時に溶湯として使用する金属と比べて同等又は高い融点を持つ金属製のスペーサ１８ａ，２４ａを配置する。続いて、溶湯をキャビティに流し込む。これにより、多孔質焼結体１６ａ，２２ａの気孔に溶湯を含浸させると共に多孔質焼結体１６ａ，２２ａのうちスペーサ１８ａ，２４ａが存在する部分を除く全面を溶湯で覆う。その後、溶湯を冷却して固化することにより、鋳造品を得る。
PCT/JP2008/051584 2007-01-31 2008-01-31 鋳造品の製造方法及び鋳造品 WO2008093809A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-021471 2007-01-31
JP2007021471 2007-01-31

Publications (1)

Publication Number Publication Date
WO2008093809A1 true WO2008093809A1 (ja) 2008-08-07

Family

ID=39674113

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/JP2008/051584 WO2008093809A1 (ja) 2007-01-31 2008-01-31 鋳造品の製造方法及び鋳造品
PCT/JP2008/051583 WO2008093808A1 (ja) 2007-01-31 2008-01-31 ヒートスプレッダモジュール、その製法及びヒートシンク

Family Applications After (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/051583 WO2008093808A1 (ja) 2007-01-31 2008-01-31 ヒートスプレッダモジュール、その製法及びヒートシンク

Country Status (1)

Country Link
WO (2) WO2008093809A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020050548A (ja) * 2018-09-27 2020-04-02 Ｄｏｗａメタルテック株式会社 金属−セラミックス接合基板およびその製造方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5748487B2 (ja) * 2010-01-27 2015-07-15 京セラ株式会社 回路基板およびこれを用いた電子装置
DE102012104593B4 (de) * 2012-05-29 2016-02-25 Sma Solar Technology Ag Halbleiterbauelement
JP5648705B2 (ja) * 2013-04-08 2015-01-07 三菱マテリアル株式会社 ヒートシンク付パワーモジュール用基板、ヒートシンク付パワーモジュール及び緩衝層付パワーモジュール用基板
DE202013103599U1 (de) * 2013-08-09 2014-11-13 Trafomodern Transformatorengesellschaft M.B.H. Elektrisches Bauteil
JP6423731B2 (ja) * 2015-02-12 2018-11-14 株式会社豊田中央研究所 半導体モジュール
CN109309065B (zh) * 2017-07-27 2023-05-05 比亚迪股份有限公司 一种散热元件及其制备方法和igbt模组
CN111356544B (zh) * 2017-11-20 2022-01-14 三菱综合材料株式会社 复合传热部件及复合传热部件的制造方法
JP7119671B2 (ja) * 2017-11-20 2022-08-17 三菱マテリアル株式会社 複合伝熱部材、及び複合伝熱部材の製造方法
JP2022048812A (ja) 2020-09-15 2022-03-28 Ｄｏｗａメタルテック株式会社 放熱部材およびその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63180357A (ja) * 1987-01-21 1988-07-25 Nabeya:Kk 流体透過性鋳造品の製造方法
JPH08215828A (ja) * 1995-02-10 1996-08-27 Ngk Insulators Ltd 複合鋳造体及びその製造方法
JP2000265253A (ja) * 1999-03-16 2000-09-26 Mitsubishi Materials Corp 金属基複合材およびその製造方法
JP2000336438A (ja) * 1999-03-25 2000-12-05 Kubota Corp 金属−セラミックス複合材料およびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003078086A (ja) * 2001-09-04 2003-03-14 Kubota Corp 半導体素子モジュール基板の積層構造
JP3907620B2 (ja) * 2003-11-14 2007-04-18 電気化学工業株式会社 セラミックス回路基板一体型アルミニウム−炭化珪素質複合体及びその製造方法
JP2005252159A (ja) * 2004-03-08 2005-09-15 Ngk Insulators Ltd 接合体の形状制御方法、接合体の製造方法、接合体、ヒートスプレッダモジュールの製造方法及びヒートスプレッダモジュール
JP5019148B2 (ja) * 2005-06-16 2012-09-05 日立金属株式会社 セラミックス回路基板およびそれを用いた半導体モジュール

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63180357A (ja) * 1987-01-21 1988-07-25 Nabeya:Kk 流体透過性鋳造品の製造方法
JPH08215828A (ja) * 1995-02-10 1996-08-27 Ngk Insulators Ltd 複合鋳造体及びその製造方法
JP2000265253A (ja) * 1999-03-16 2000-09-26 Mitsubishi Materials Corp 金属基複合材およびその製造方法
JP2000336438A (ja) * 1999-03-25 2000-12-05 Kubota Corp 金属−セラミックス複合材料およびその製造方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IIDAKA I.: "Imono", 30 August 1956, THE NIKKAN KOGYO SHINBUN, LTD. *
ISHINO T.: "Tanzo Gijutsu no Genryo to Rekishi", KABUSHIKI KAISHA SANGYO GIJUTSU SENTA, 1 April 1977 (1977-04-01), pages 86 - 88 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020050548A (ja) * 2018-09-27 2020-04-02 Ｄｏｗａメタルテック株式会社 金属−セラミックス接合基板およびその製造方法
JP7157609B2 (ja) 2018-09-27 2022-10-20 Ｄｏｗａメタルテック株式会社 金属－セラミックス接合基板およびその製造方法

Also Published As

Publication number Publication date
WO2008093808A1 (ja) 2008-08-07

Similar Documents

Publication Publication Date Title
WO2008093809A1 (ja) 鋳造品の製造方法及び鋳造品
MY152886A (en) Method of producing a copper alloy wire rod and copper alloy wire rod
WO2014093826A3 (en) Multi-shot casting
WO2009099682A3 (en) Controlled alloy stent
UA110787C2 (uk) Спосіб виготовлення зливка сплаву, зливок сплаву, спосіб обробки зливка сплаву (варіанти) і отримуваний у вигляді нього продукт гарячого формування
EP2612930A3 (en) Method of making an austempered ductile iron article
WO2010034765A3 (de) Verfahren zur herstellung einer gussform zum vergiessen von metallschmelzen
UA103522C2 (ru) Способ и устройство для полунепрерывного литья полых металлических заготовок
MX362898B (es) Método para colado de una pieza colada con al menos una abertura pasante.
EP1920861A4 (en) PRESSURE MOLDING MOLD, MOLDING METHOD FOR PRESSURE MOLDING, AND PRESSURE MOLDING METHOD
WO2012161463A3 (ko) 합금제조방법 및 이에 의해 제조된 합금
BRPI0815268A2 (pt) "molde de metal fundido, sistema de fundação com molde de metal fundido vertical, método para fundição de metal fundido com resfriamento direto vertical e método para otimizar as superfícies de laminação de um peça fundida produzida durante a fundição contínua de metal fundido"
DE602005020665D1 (de) Vorgespannter sandkern
WO2012024464A3 (en) Method of making molds with production ready surfaces
WO2008028455A8 (de) Einteilige verlorene, temperierbare giessform für gussteile aus metall sowie verfahren zu ihrer herstellung
WO2008085820A8 (en) Method of reinforcing low melting temperature cast metal parts
EP2158984A4 (en) Mold for continuous casting of round billet cast piece and method of continuous casting thereof
HUP0402386A2 (en) Method and mould shooter for producing mould parts, such as casting cores, for casting moulds used to cast metal melts
ATE400383T1 (de) Erhitzen zur steuerung der verfestigung einer gussstruktur
PL1779943T3 (pl) Sposób i urządzenie do odlewania kadłubów cylindrowych ze stopów lekkich w formach piaskowych
TWI256323B (en) Pitted mold and method for casting a battery part
WO2007015131A3 (en) An electrode and a method for forming an electrode
WO2011019506A3 (en) System and method for integrally casting multilayer metallic structures
EP2574413A3 (en) Method and system for die casting a hybrid component
CN204292881U (zh) 一种内嵌式发热管铝锅

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08710682

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08710682

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP